NTHD5904T1 onsemi
Hersteller: onsemiDescription: MOSFET 2N-CH 20V 3.1A CHIPFET
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 600mV @ 250µA
Supplier Device Package: ChipFET™
auf Bestellung 81000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1402+ | 0.33 EUR |
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Technische Details NTHD5904T1 onsemi
Description: MOSFET 2N-CH 20V 3.1A CHIPFET, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.1A, Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 600mV @ 250µA, Supplier Device Package: ChipFET™.
Weitere Produktangebote NTHD5904T1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| NTHD5904T1 | Hersteller : ON |
07+ TSOP1206-8 |
auf Bestellung 2700 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTHD5904T1 | Hersteller : ON |
04+ TSOP1206-8 |
auf Bestellung 2700 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTHD5904T1 | Hersteller : ONSEMI |
Description: ONSEMI - NTHD5904T1 - NTHD5904T1, SINGLE MOSFETS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 81000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTHD5904T1 | Hersteller : onsemi |
Description: MOSFET 2N-CH 20V 3.1A CHIPFET Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.1A Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 600mV @ 250µA Supplier Device Package: ChipFET™ |
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