Technische Details FDMS0302S ON Semiconductor / Fairchild
Description: MOSFET N-CH 30V 29A/49A 8PQFN, Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-PQFN (5x6), Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 2.5W (Ta), 89W (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 28A, 10V, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 49A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote FDMS0302S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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FDMS0302S | onsemi |
 Description: MOSFET N-CH 30V 29A/49A 8PQFNInput Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 2.5W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 28A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 49A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FDMS0302S | onsemi |
Description: MOSFET N-CH 30V 29A/49A 8PQFN Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 2.5W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 28A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 49A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDMS0302S |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 29A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 2.5W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 29A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 2.5W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS0302S |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 29A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 2.5W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 29A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 2.5W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH