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NDD03N40Z-1G

NDD03N40Z-1G onsemi

NDD03N40Z%2C%20NDT03N40Z.pdf
Hersteller: onsemi
Description: MOSFET N-CH 400V 2.1A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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Anzahl Preis
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Mindestbestellmenge: 1110
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Technische Details NDD03N40Z-1G onsemi

Description: MOSFET N-CH 400V 2.1A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V, Drain to Source Voltage (Vdss): 400 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 4.5V @ 50µA, Power Dissipation (Max): 37W (Tc), Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V, Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.

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NDD03N40Z-1G NDD03N40Z-1G onsemi NDD03N40Z%2C%20NDT03N40Z.pdf Description: MOSFET N-CH 400V 2.1A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
Produkt ist nicht verfügbar
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NDD03N40Z-1G ON Semiconductor NDD03N40Z%2C%20NDT03N40Z.pdf MOSFET NFET DPAK 400V 2.4A 3.4OH
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD03N40Z-1G NDD03N40Z%2C%20NDT03N40Z.pdf
NDD03N40Z-1G
Hersteller: onsemi
Description: MOSFET N-CH 400V 2.1A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD03N40Z-1G NDD03N40Z%2C%20NDT03N40Z.pdf
Hersteller: ON Semiconductor
MOSFET NFET DPAK 400V 2.4A 3.4OH
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH