NTHD4N02FT1G onsemi

Description: MOSFET N-CH 20V 2.9A CHIPFET, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: ChipFET™, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 910mW (Tj), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR).