| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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NCV6324CMTAAWTBG | onsemi |
 Description: IC REG BUCK ADJ 2A 8WDFNWQualification: AEC-Q100 Grade: Automotive Voltage - Output (Min/Fixed): 0.6V Voltage - Input (Min): 2.5V Voltage - Output (Max): 5.5V Synchronous Rectifier: Yes Supplier Device Package: 8-WDFNW (2x2) Topology: Buck Voltage - Input (Max): 5.5V Frequency - Switching: 3MHz Current - Output: 2A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount, Wettable Flank Output Type: Adjustable Package / Case: 8-WFDFN Exposed Pad Packaging: Cut Tape (CT) Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TA) |
auf Bestellung 20495 Stücke: Lieferzeit 10-14 Tag (e) |
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50C02MH-TL-E | onsemi |
Description: TRANS NPN 50V 0.5A 3-MCPH Packaging: Bulk Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 100mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Frequency - Transition: 500MHz Supplier Device Package: 3-MCPH Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 600 mW |
auf Bestellung 178450 Stücke: Lieferzeit 10-14 Tag (e) |
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| SPS1M001A-03 | onsemi |
Description: RFID TAG R/W 902-928MHZ INLAY Frequency: 902MHz ~ 928MHz Style: Inlay Size / Dimension: 6.469" L x 0.787" W (165.00mm x 20.00mm) Packaging: Tape & Reel (TR) Writable Memory: 128b (EPC) Standards: ISO 18000-6, EPC Technology: Passive Operating Temperature: -40°C ~ 85°C Memory Type: Read/Write |
auf Bestellung 94765 Stücke: Lieferzeit 10-14 Tag (e) |
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N01S830BAT22E | onsemi |
Description: SERIAL SRAM MEMORY, 1 MB, ULTRA- Packaging: Bulk Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: SRAM - Single Port, Synchronous, Standard Clock Frequency: 16 MHz Memory Format: SRAM Supplier Device Package: 8-TSSOP Grade: Automotive Memory Interface: SPI - Quad I/O Access Time: 32 ns Memory Organization: 128K x 8 Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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N01S830BAT22ET | onsemi |
Description: SERIAL SRAM MEMORY, 1 MB, ULTRA- Packaging: Bulk Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: SRAM - Single Port, Synchronous, Standard Clock Frequency: 16 MHz Memory Format: SRAM Supplier Device Package: 8-TSSOP Grade: Automotive Memory Interface: SPI - Quad I/O Access Time: 32 ns Memory Organization: 128K x 8 Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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N01S830HAT22E | onsemi |
Description: SERIAL SRAM MEMORY, 1 MB, ULTRA- Packaging: Bulk Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: SRAM - Single Port, Synchronous, Standard Clock Frequency: 16 MHz Memory Format: SRAM Supplier Device Package: 8-TSSOP Grade: Automotive Memory Interface: SPI - Quad I/O Access Time: 32 ns Memory Organization: 128K x 8 Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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N01S830HAT22ET | onsemi |
Description: SERIAL SRAM MEMORY, 1 MB, ULTRA- Packaging: Bulk Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: SRAM - Single Port, Synchronous, Standard Clock Frequency: 16 MHz Memory Format: SRAM Supplier Device Package: 8-TSSOP Grade: Automotive Memory Interface: SPI - Quad I/O Access Time: 32 ns Memory Organization: 128K x 8 Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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NTBL048N60S5H | onsemi |
Description: MOSFET - POWER,NCHANNEL, SUPERFE Packaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 25A, 10V Power Dissipation (Max): 297W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5.6mA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5277 pF @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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74LVTH574MTC | onsemi |
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP Packaging: Bulk Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Current - Quiescent (Iq): 190 µA Current - Output High, Low: 32mA, 64mA Trigger Type: Positive Edge Clock Frequency: 150 MHz Input Capacitance: 4 pF Supplier Device Package: 20-TSSOP Max Propagation Delay @ V, Max CL: 4.6ns @ 3.3V, 50pF Number of Bits per Element: 8 |
auf Bestellung 18169 Stücke: Lieferzeit 10-14 Tag (e) |
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74LVTH574MTCX | onsemi |
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP Packaging: Bulk Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Current - Quiescent (Iq): 190 µA Current - Output High, Low: 32mA, 64mA Trigger Type: Positive Edge Clock Frequency: 150 MHz Input Capacitance: 4 pF Supplier Device Package: 20-TSSOP Max Propagation Delay @ V, Max CL: 4.6ns @ 3.3V, 50pF Number of Bits per Element: 8 |
auf Bestellung 880 Stücke: Lieferzeit 10-14 Tag (e) |
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SN74LS365AD | onsemi |
Description: IC BUFF NON-INVERT 5.25V 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.75V ~ 5.25V Number of Bits per Element: 6 Current - Output High, Low: 2.6mA, 24mA Supplier Device Package: 16-SOIC |
auf Bestellung 13269 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ3C065080K3S | onsemi |
Description: MOSFET N-CH 650V 31A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 111mOhm @ 20A, 12V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
auf Bestellung 42223 Stücke: Lieferzeit 10-14 Tag (e) |
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UF3C065040K4S | onsemi |
Description: MOSFET N-CH 650V 54A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 12V Power Dissipation (Max): 326W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
auf Bestellung 6578 Stücke: Lieferzeit 10-14 Tag (e) |
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UF3C065030B3 | onsemi |
Description: MOSFET N-CH 650V 65A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V Power Dissipation (Max): 242W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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UF3C065030B3 | onsemi |
Description: MOSFET N-CH 650V 65A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V Power Dissipation (Max): 242W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
auf Bestellung 1776 Stücke: Lieferzeit 10-14 Tag (e) |
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UF3C065030T3S | onsemi |
Description: MOSFET N-CH 650V 85A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V Power Dissipation (Max): 441W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
auf Bestellung 2672 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ3C065030K3S | onsemi |
Description: MOSFET N-CH 650V 85A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V Power Dissipation (Max): 441W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
auf Bestellung 1792 Stücke: Lieferzeit 10-14 Tag (e) |
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UF3C065030K4S | onsemi |
Description: MOSFET N-CH 650V 85A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V Power Dissipation (Max): 441W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
auf Bestellung 1284 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ3C120040K3S | onsemi |
Description: SICFET N-CH 1200V 65A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 12V Power Dissipation (Max): 429W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
auf Bestellung 5388 Stücke: Lieferzeit 10-14 Tag (e) |
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MM74C927N | onsemi |
Description: IC DRVR 7 SEGMENT 4 DIGIT 18DIP Packaging: Tube Package / Case: 18-DIP (0.300", 7.62mm) Display Type: LED Mounting Type: Through Hole Interface: BCD Configuration: 7 Segment Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 6V Digits or Characters: 4 Digits Supplier Device Package: 18-PDIP Current - Supply: 20 µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NV25080DTVLT3G | onsemi |
Description: IC EEPROM 8KBIT SPI 20MHZ 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 20 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Write Cycle Time - Word, Page: 4ms Memory Interface: SPI Access Time: 20 ns Memory Organization: 1K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NV25080DTVLT3G | onsemi |
Description: IC EEPROM 8KBIT SPI 20MHZ 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 20 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Write Cycle Time - Word, Page: 4ms Memory Interface: SPI Access Time: 20 ns Memory Organization: 1K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC74ACT161DR2G | onsemi |
Description: IC BINARY COUNTER 4-BIT 16SOIC Packaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: -40°C ~ 85°C Direction: Up Trigger Type: Positive Edge Timing: Synchronous Supplier Device Package: 16-SOIC Voltage - Supply: 4.5 V ~ 5.5 V Count Rate: 125 MHz Number of Bits per Element: 4 |
auf Bestellung 19658 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBL080N60S5H | onsemi |
Description: MOSFET - POWERNCHANNEL, SUPERFET Packaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 3.3mA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 55.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NTMT080N60S5 | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFE Packaging: Bulk Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 16.5A, 10V Power Dissipation (Max): 212W (Tc) Vgs(th) (Max) @ Id: 4V @ 3.4mA Supplier Device Package: 4-TDFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 56.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3029 pF @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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FJH1101 | onsemi |
Description: DIODE STANDARD 15V 150MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA Current - Reverse Leakage @ Vr: 15 pA @ 15 V |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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MC10EPT20DTG | onsemi |
Description: IC XLTR MS UNIDIR 8-TSSOP Packaging: Bulk Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Differential Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 8-TSSOP Channel Type: Unidirectional Output Signal: LVPECL Translator Type: Mixed Signal Channels per Circuit: 1 Input Signal: LVCMOS, LVTTL Number of Circuits: 1 |
auf Bestellung 19249 Stücke: Lieferzeit 10-14 Tag (e) |
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MOC3021VM | onsemi |
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Triac Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.15V Voltage - Isolation: 4170Vrms Approval Agency: IEC/EN/DIN, UL Current - Hold (Ih): 100µA (Typ) Supplier Device Package: 6-DIP Zero Crossing Circuit: No Current - LED Trigger (Ift) (Max): 15mA Number of Channels: 1 Voltage - Off State: 400 V Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 998 Stücke: Lieferzeit 10-14 Tag (e) |
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| MT9P401I12STC-DP | onsemi |
Description: SENSOR IMAGE CMOS 5MP 48LCC Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MT9P401I12STC-DR | onsemi |
Description: SENSOR IMAGE CMOS 5MP 48LCC Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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UJ3N065025K3S | onsemi |
Description: JFET N-CH 650V 85A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 100V Voltage - Breakdown (V(BR)GSS): 650 V Current Drain (Id) - Max: 85 A Supplier Device Package: TO-247-3 Drain to Source Voltage (Vdss): 650 V Power - Max: 441 W Resistance - RDS(On): 33 mOhms |
auf Bestellung 1211 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ3C065030T3S | onsemi |
Description: MOSFET N-CH 650V 85A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V Power Dissipation (Max): 441W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
auf Bestellung 1883 Stücke: Lieferzeit 10-14 Tag (e) |
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MC74LVX08DTR2G-Q | onsemi |
Description: LOG CMOS GATE AND QUAD Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 3.6V Current - Output High, Low: 4mA, 4mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V ~ 2.4V Input Logic Level - Low: 0.5V ~ 0.8V Max Propagation Delay @ V, Max CL: 10.6ns @ 3.3V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MC74LVX08DTR2G-Q | onsemi |
Description: LOG CMOS GATE AND QUAD Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 3.6V Current - Output High, Low: 4mA, 4mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V ~ 2.4V Input Logic Level - Low: 0.5V ~ 0.8V Max Propagation Delay @ V, Max CL: 10.6ns @ 3.3V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| 1SMA33CAT3G | onsemi |
Description: 400 W TRANSIENT VOLTAGE SUPPRESS Packaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 190pF @ 1MHz Current - Peak Pulse (10/1000µs): 7.5A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: SMA Bidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 400W Power Line Protection: No |
auf Bestellung 81123 Stücke: Lieferzeit 10-14 Tag (e) |
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1SMB33CAT3G | onsemi |
Description: ZEN SMB TVS CLP 600W 33V Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ICTE-010 | onsemi |
Description: DIODE TVS SINGLE UNI-DIR 10V 1.5 Packaging: Bulk |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP362CMUTBG | onsemi |
Description: IC OCP TVS ESD USB POS 10-UDFN Packaging: Tape & Reel (TR) Package / Case: 10-UFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.2V ~ 20V Applications: Overvoltage Protection Controller Supplier Device Package: 10-UDFN (2.5x2) Current - Supply: 20 µA DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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NCP362CMUTBG | onsemi |
Description: IC OCP TVS ESD USB POS 10-UDFN Packaging: Bulk Package / Case: 10-UFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.2V ~ 20V Applications: Overvoltage Protection Controller Supplier Device Package: 10-UDFN (2.5x2) Current - Supply: 20 µA DigiKey Programmable: Not Verified |
auf Bestellung 1300 Stücke: Lieferzeit 10-14 Tag (e) |
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| EMI6316FCTBG | onsemi |
Description: FILTER RC 40 OHMS/7PF ESD SMD Packaging: Bulk Package / Case: 15-XFBGA, WLCSP Size / Dimension: 0.061" L x 0.061" W (1.55mm x 1.55mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 40Ohms, C = 7pF (Total) Height: 0.020" (0.50mm) Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC Resistance - Channel (Ohms): 40 ESD Protection: Yes Number of Channels: 6 |
auf Bestellung 360000 Stücke: Lieferzeit 10-14 Tag (e) |
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FGB3245G2-F085C | onsemi |
Description: IGBT 450V 41A TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Logic Reverse Recovery Time (trr): 2.6 µs Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 900ns/5.4µs Test Condition: 300V, 6.5A, 1kOhm, 5V Gate Charge: 23 nC Grade: Automotive Current - Collector (Ic) (Max): 41 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 150 W Qualification: AEC-Q101 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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FGB3245G2-F085C | onsemi |
Description: IGBT 450V 41A TO-263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Logic Reverse Recovery Time (trr): 2.6 µs Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 900ns/5.4µs Test Condition: 300V, 6.5A, 1kOhm, 5V Gate Charge: 23 nC Grade: Automotive Current - Collector (Ic) (Max): 41 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 150 W Qualification: AEC-Q101 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3443DV | onsemi |
Description: MOSFET P-CH 20V 4A SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V |
Produkt ist nicht verfügbar |
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MC74VHC1GT126MU3TCG | onsemi |
Description: IC BUFF 1.65V 6-UDFN Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 6-UDFN (1x1) |
auf Bestellung 53 Stücke: Lieferzeit 10-14 Tag (e) |
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MC100LVEL33DTG | onsemi |
Description: IC DIVIDER BY 4 1-BIT 8TSSOP Packaging: Bulk Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Divide-by-4 Reset: Asynchronous Operating Temperature: -40°C ~ 85°C Trigger Type: Positive, Negative Supplier Device Package: 8-TSSOP Voltage - Supply: 3 V ~ 3.8 V Count Rate: 4 GHz Number of Bits per Element: 2 |
auf Bestellung 27641 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV30100LT1G | onsemi |
Description: TRANS PNP 30V 1A SOT23-3 Qualification: AEC-Q101 Power - Max: 710 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 1 A Grade: Automotive Supplier Device Package: SOT-23-3 (TO-236) Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV30100LT1G | onsemi |
Description: TRANS PNP 30V 1A SOT23-3 Qualification: AEC-Q101 Power - Max: 710 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 1 A Grade: Automotive Supplier Device Package: SOT-23-3 (TO-236) Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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MT9M413C36STM-DR | onsemi |
Description: SENSOR IMAGE MONO CMOS 280-PGA Frames per Second: 500.0 Supplier Device Package: 280-PGA Active Pixel Array: 1280H x 1024V Pixel Size: 12µm x 12µm Voltage - Supply: 3.3V Operating Temperature: -5°C ~ 60°C Type: CMOS Package / Case: 280-PGA Packaging: Tray |
Produkt ist nicht verfügbar |
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NSVMUN5338DW1T3G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms, 47kOhms Resistor - Emitter Base (R2): 10kOhms, 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 9490 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN5330DW1T1 | onsemi |
Description: TRANS BRT DUAL 100MA 50V SOT-363 Packaging: Bulk |
auf Bestellung 105000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVMUN5336DW1T1G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 187mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 100kOhms Resistor - Emitter Base (R2): 100kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NSVMUN5336DW1T1G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 187mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 100kOhms Resistor - Emitter Base (R2): 100kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BZX85C4V7 | onsemi |
Description: DIODE ZENER 4.7V 1W DO41 Supplier Device Package: DO-41 Impedance (Max) (Zzt): 13 Ohms Voltage - Zener (Nom) (Vz): 4.7 V Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±6% Packaging: Bulk Current - Reverse Leakage @ Vr: 3 µA @ 1.5 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC74LVX4066MELG | onsemi |
Description: IC SW SPST-NOX4 20OHM SOEIAJ-14 Packaging: Bulk Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 85°C (TA) On-State Resistance (Max): 20Ohm -3db Bandwidth: 160MHz Supplier Device Package: SOEIAJ-14 Voltage - Supply, Single (V+): 2V ~ 6V Crosstalk: -80dB @ 1MHz Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 10Ohm Channel Capacitance (CS(off), CD(off)): 10pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 4 |
auf Bestellung 47344 Stücke: Lieferzeit 10-14 Tag (e) |
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UF3C120040K3S | onsemi |
Description: SICFET N-CH 1200V 65A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 12V Power Dissipation (Max): 429W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
auf Bestellung 115 Stücke: Lieferzeit 10-14 Tag (e) |
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UF3C120040K4S | onsemi |
Description: SICFET N-CH 1200V 65A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 12V Power Dissipation (Max): 429W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
auf Bestellung 3902 Stücke: Lieferzeit 10-14 Tag (e) |
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MBR1660 | onsemi |
Description: DIODE SCHOTTKY 60V 16A TO2202 Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 16A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 1 mA @ 60 V |
auf Bestellung 244 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTND31211PZTAG | onsemi |
Description: MOSFET 2P-CH 20V 0.127A 6XLLGA Input Capacitance (Ciss) (Max) @ Vds: 12.8pF @ 15V Current - Continuous Drain (Id) @ 25°C: 127mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 125mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel Mounting Type: Surface Mount Package / Case: 6-XFLGA Packaging: Tape & Reel (TR) Supplier Device Package: 6-XLLGA (0.9x0.65) Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NLVHCT14ADR2G | onsemi |
Description: IC INVERT SCHMITT 6CH 1IN 14SOIC Qualification: AEC-Q100 Current - Quiescent (Max): 1 µA Number of Circuits: 6 Grade: Automotive Max Propagation Delay @ V, Max CL: 32ns @ 5V, 50pF Input Logic Level - Low: 0.1V ~ 0.26V Input Logic Level - High: 3.98V ~ 5.4V Supplier Device Package: 14-SOIC Number of Inputs: 1 Current - Output High, Low: 4mA, 4mA Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: Inverter Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Features: Schmitt Trigger Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NLVHCT14ADR2G | onsemi |
Description: IC INVERT SCHMITT 6CH 1IN 14SOIC Qualification: AEC-Q100 Current - Quiescent (Max): 1 µA Number of Circuits: 6 Grade: Automotive Max Propagation Delay @ V, Max CL: 32ns @ 5V, 50pF Input Logic Level - Low: 0.1V ~ 0.26V Input Logic Level - High: 3.98V ~ 5.4V Supplier Device Package: 14-SOIC Number of Inputs: 1 Current - Output High, Low: 4mA, 4mA Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: Inverter Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Features: Schmitt Trigger Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NCV6324CMTAAWTBG |
|
Hersteller: onsemi
Description: IC REG BUCK ADJ 2A 8WDFNW
Qualification: AEC-Q100
Grade: Automotive
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 2.5V
Voltage - Output (Max): 5.5V
Synchronous Rectifier: Yes
Supplier Device Package: 8-WDFNW (2x2)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 3MHz
Current - Output: 2A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount, Wettable Flank
Output Type: Adjustable
Package / Case: 8-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Description: IC REG BUCK ADJ 2A 8WDFNW
Qualification: AEC-Q100
Grade: Automotive
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 2.5V
Voltage - Output (Max): 5.5V
Synchronous Rectifier: Yes
Supplier Device Package: 8-WDFNW (2x2)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 3MHz
Current - Output: 2A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount, Wettable Flank
Output Type: Adjustable
Package / Case: 8-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
auf Bestellung 20495 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.06 EUR |
| 10+ | 2.53 EUR |
| 25+ | 2.13 EUR |
| 100+ | 1.68 EUR |
| 250+ | 1.45 EUR |
| 500+ | 1.31 EUR |
| 1000+ | 1.2 EUR |
| 50C02MH-TL-E |
|
Hersteller: onsemi
Description: TRANS NPN 50V 0.5A 3-MCPH
Packaging: Bulk
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 500MHz
Supplier Device Package: 3-MCPH
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 600 mW
Description: TRANS NPN 50V 0.5A 3-MCPH
Packaging: Bulk
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 500MHz
Supplier Device Package: 3-MCPH
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 600 mW
auf Bestellung 178450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3109+ | 0.2 EUR |
| SPS1M001A-03 |
Hersteller: onsemi
Description: RFID TAG R/W 902-928MHZ INLAY
Frequency: 902MHz ~ 928MHz
Style: Inlay
Size / Dimension: 6.469" L x 0.787" W (165.00mm x 20.00mm)
Packaging: Tape & Reel (TR)
Writable Memory: 128b (EPC)
Standards: ISO 18000-6, EPC
Technology: Passive
Operating Temperature: -40°C ~ 85°C
Memory Type: Read/Write
Description: RFID TAG R/W 902-928MHZ INLAY
Frequency: 902MHz ~ 928MHz
Style: Inlay
Size / Dimension: 6.469" L x 0.787" W (165.00mm x 20.00mm)
Packaging: Tape & Reel (TR)
Writable Memory: 128b (EPC)
Standards: ISO 18000-6, EPC
Technology: Passive
Operating Temperature: -40°C ~ 85°C
Memory Type: Read/Write
auf Bestellung 94765 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 60+ | 18.74 EUR |
| N01S830BAT22E |
|
Hersteller: onsemi
Description: SERIAL SRAM MEMORY, 1 MB, ULTRA-
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: SRAM - Single Port, Synchronous, Standard
Clock Frequency: 16 MHz
Memory Format: SRAM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Memory Interface: SPI - Quad I/O
Access Time: 32 ns
Memory Organization: 128K x 8
Qualification: AEC-Q100
Description: SERIAL SRAM MEMORY, 1 MB, ULTRA-
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: SRAM - Single Port, Synchronous, Standard
Clock Frequency: 16 MHz
Memory Format: SRAM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Memory Interface: SPI - Quad I/O
Access Time: 32 ns
Memory Organization: 128K x 8
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| N01S830BAT22ET |
|
Hersteller: onsemi
Description: SERIAL SRAM MEMORY, 1 MB, ULTRA-
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: SRAM - Single Port, Synchronous, Standard
Clock Frequency: 16 MHz
Memory Format: SRAM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Memory Interface: SPI - Quad I/O
Access Time: 32 ns
Memory Organization: 128K x 8
Qualification: AEC-Q100
Description: SERIAL SRAM MEMORY, 1 MB, ULTRA-
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: SRAM - Single Port, Synchronous, Standard
Clock Frequency: 16 MHz
Memory Format: SRAM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Memory Interface: SPI - Quad I/O
Access Time: 32 ns
Memory Organization: 128K x 8
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| N01S830HAT22E |
|
Hersteller: onsemi
Description: SERIAL SRAM MEMORY, 1 MB, ULTRA-
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: SRAM - Single Port, Synchronous, Standard
Clock Frequency: 16 MHz
Memory Format: SRAM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Memory Interface: SPI - Quad I/O
Access Time: 32 ns
Memory Organization: 128K x 8
Qualification: AEC-Q100
Description: SERIAL SRAM MEMORY, 1 MB, ULTRA-
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: SRAM - Single Port, Synchronous, Standard
Clock Frequency: 16 MHz
Memory Format: SRAM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Memory Interface: SPI - Quad I/O
Access Time: 32 ns
Memory Organization: 128K x 8
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| N01S830HAT22ET |
|
Hersteller: onsemi
Description: SERIAL SRAM MEMORY, 1 MB, ULTRA-
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: SRAM - Single Port, Synchronous, Standard
Clock Frequency: 16 MHz
Memory Format: SRAM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Memory Interface: SPI - Quad I/O
Access Time: 32 ns
Memory Organization: 128K x 8
Qualification: AEC-Q100
Description: SERIAL SRAM MEMORY, 1 MB, ULTRA-
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: SRAM - Single Port, Synchronous, Standard
Clock Frequency: 16 MHz
Memory Format: SRAM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Memory Interface: SPI - Quad I/O
Access Time: 32 ns
Memory Organization: 128K x 8
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTBL048N60S5H |
|
Hersteller: onsemi
Description: MOSFET - POWER,NCHANNEL, SUPERFE
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 25A, 10V
Power Dissipation (Max): 297W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5.6mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5277 pF @ 400 V
Description: MOSFET - POWER,NCHANNEL, SUPERFE
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 25A, 10V
Power Dissipation (Max): 297W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5.6mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5277 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74LVTH574MTC |
|
Hersteller: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Current - Quiescent (Iq): 190 µA
Current - Output High, Low: 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 4.6ns @ 3.3V, 50pF
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Current - Quiescent (Iq): 190 µA
Current - Output High, Low: 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 4.6ns @ 3.3V, 50pF
Number of Bits per Element: 8
auf Bestellung 18169 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 617+ | 0.99 EUR |
| 74LVTH574MTCX |
|
Hersteller: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Current - Quiescent (Iq): 190 µA
Current - Output High, Low: 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 4.6ns @ 3.3V, 50pF
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Current - Quiescent (Iq): 190 µA
Current - Output High, Low: 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 4.6ns @ 3.3V, 50pF
Number of Bits per Element: 8
auf Bestellung 880 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 337+ | 1.78 EUR |
| SN74LS365AD |
|
Hersteller: onsemi
Description: IC BUFF NON-INVERT 5.25V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Number of Bits per Element: 6
Current - Output High, Low: 2.6mA, 24mA
Supplier Device Package: 16-SOIC
Description: IC BUFF NON-INVERT 5.25V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Number of Bits per Element: 6
Current - Output High, Low: 2.6mA, 24mA
Supplier Device Package: 16-SOIC
auf Bestellung 13269 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 303+ | 1.99 EUR |
| UJ3C065080K3S |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 31A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 20A, 12V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 650V 31A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 20A, 12V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 42223 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 20.06 EUR |
| 30+ | 12 EUR |
| 120+ | 10.22 EUR |
| 510+ | 9.59 EUR |
| UF3C065040K4S |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 54A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 12V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 650V 54A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 12V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 6578 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.97 EUR |
| 30+ | 20.47 EUR |
| UF3C065030B3 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 65A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 650V 65A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 25.57 EUR |
| UF3C065030B3 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 65A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 650V 65A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 1776 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 46.29 EUR |
| 10+ | 33.46 EUR |
| 50+ | 31.3 EUR |
| UF3C065030T3S |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 85A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 650V 85A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 2672 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 33.62 EUR |
| 50+ | 27.51 EUR |
| 100+ | 27.5 EUR |
| UJ3C065030K3S |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 85A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 650V 85A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 1792 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 47.21 EUR |
| 30+ | 30.17 EUR |
| 60+ | 28.13 EUR |
| 120+ | 26.43 EUR |
| 510+ | 26.24 EUR |
| UF3C065030K4S |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 85A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 650V 85A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 1284 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 34.22 EUR |
| 30+ | 27.45 EUR |
| 120+ | 21.66 EUR |
| UJ3C120040K3S |
|
Hersteller: onsemi
Description: SICFET N-CH 1200V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 12V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: SICFET N-CH 1200V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 12V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 5388 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 67.15 EUR |
| 30+ | 44.23 EUR |
| 60+ | 41.52 EUR |
| 120+ | 40.86 EUR |
| MM74C927N |
|
Hersteller: onsemi
Description: IC DRVR 7 SEGMENT 4 DIGIT 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Display Type: LED
Mounting Type: Through Hole
Interface: BCD
Configuration: 7 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 6V
Digits or Characters: 4 Digits
Supplier Device Package: 18-PDIP
Current - Supply: 20 µA
Description: IC DRVR 7 SEGMENT 4 DIGIT 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Display Type: LED
Mounting Type: Through Hole
Interface: BCD
Configuration: 7 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 6V
Digits or Characters: 4 Digits
Supplier Device Package: 18-PDIP
Current - Supply: 20 µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NV25080DTVLT3G |
|
Hersteller: onsemi
Description: IC EEPROM 8KBIT SPI 20MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 8KBIT SPI 20MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NV25080DTVLT3G |
|
Hersteller: onsemi
Description: IC EEPROM 8KBIT SPI 20MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 8KBIT SPI 20MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MC74ACT161DR2G |
|
Hersteller: onsemi
Description: IC BINARY COUNTER 4-BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-SOIC
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 125 MHz
Number of Bits per Element: 4
Description: IC BINARY COUNTER 4-BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-SOIC
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 125 MHz
Number of Bits per Element: 4
auf Bestellung 19658 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 69.19 EUR |
| NTBL080N60S5H |
|
Hersteller: onsemi
Description: MOSFET - POWERNCHANNEL, SUPERFET
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 3.3mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 400 V
Description: MOSFET - POWERNCHANNEL, SUPERFET
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 3.3mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 400 V
Produkt ist nicht verfügbar
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| NTMT080N60S5 |
|
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Bulk
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16.5A, 10V
Power Dissipation (Max): 212W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.4mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3029 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Bulk
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16.5A, 10V
Power Dissipation (Max): 212W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.4mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3029 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FJH1101 |
|
Hersteller: onsemi
Description: DIODE STANDARD 15V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 15 pA @ 15 V
Description: DIODE STANDARD 15V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 15 pA @ 15 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 32.25 EUR |
| MC10EPT20DTG |
|
Hersteller: onsemi
Description: IC XLTR MS UNIDIR 8-TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-TSSOP
Channel Type: Unidirectional
Output Signal: LVPECL
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: LVCMOS, LVTTL
Number of Circuits: 1
Description: IC XLTR MS UNIDIR 8-TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-TSSOP
Channel Type: Unidirectional
Output Signal: LVPECL
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: LVCMOS, LVTTL
Number of Circuits: 1
auf Bestellung 19249 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 34+ | 15.84 EUR |
| MOC3021VM |
|
Hersteller: onsemi
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 15mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 15mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.62 EUR |
| 19+ | 1.13 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.69 EUR |
| UJ3N065025K3S |
|
Hersteller: onsemi
Description: JFET N-CH 650V 85A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 100V
Voltage - Breakdown (V(BR)GSS): 650 V
Current Drain (Id) - Max: 85 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 650 V
Power - Max: 441 W
Resistance - RDS(On): 33 mOhms
Description: JFET N-CH 650V 85A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 100V
Voltage - Breakdown (V(BR)GSS): 650 V
Current Drain (Id) - Max: 85 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 650 V
Power - Max: 441 W
Resistance - RDS(On): 33 mOhms
auf Bestellung 1211 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 37.04 EUR |
| 30+ | 25.92 EUR |
| UJ3C065030T3S |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 85A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 650V 85A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 1883 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 42.6 EUR |
| 50+ | 25.82 EUR |
| 100+ | 25.29 EUR |
| MC74LVX08DTR2G-Q |
|
Hersteller: onsemi
Description: LOG CMOS GATE AND QUAD
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 2.4V
Input Logic Level - Low: 0.5V ~ 0.8V
Max Propagation Delay @ V, Max CL: 10.6ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: LOG CMOS GATE AND QUAD
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 2.4V
Input Logic Level - Low: 0.5V ~ 0.8V
Max Propagation Delay @ V, Max CL: 10.6ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.27 EUR |
| MC74LVX08DTR2G-Q |
|
Hersteller: onsemi
Description: LOG CMOS GATE AND QUAD
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 2.4V
Input Logic Level - Low: 0.5V ~ 0.8V
Max Propagation Delay @ V, Max CL: 10.6ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: LOG CMOS GATE AND QUAD
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 2.4V
Input Logic Level - Low: 0.5V ~ 0.8V
Max Propagation Delay @ V, Max CL: 10.6ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.57 EUR |
| 23+ | 0.93 EUR |
| 28+ | 0.77 EUR |
| 100+ | 0.58 EUR |
| 250+ | 0.5 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.39 EUR |
| 1SMA33CAT3G |
Hersteller: onsemi
Description: 400 W TRANSIENT VOLTAGE SUPPRESS
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 190pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: 400 W TRANSIENT VOLTAGE SUPPRESS
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 190pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 81123 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 757+ | 0.73 EUR |
| 1SMB33CAT3G |
|
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ICTE-010 |
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 807+ | 0.74 EUR |
| NCP362CMUTBG |
|
Hersteller: onsemi
Description: IC OCP TVS ESD USB POS 10-UDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V ~ 20V
Applications: Overvoltage Protection Controller
Supplier Device Package: 10-UDFN (2.5x2)
Current - Supply: 20 µA
DigiKey Programmable: Not Verified
Description: IC OCP TVS ESD USB POS 10-UDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V ~ 20V
Applications: Overvoltage Protection Controller
Supplier Device Package: 10-UDFN (2.5x2)
Current - Supply: 20 µA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP362CMUTBG |
|
Hersteller: onsemi
Description: IC OCP TVS ESD USB POS 10-UDFN
Packaging: Bulk
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V ~ 20V
Applications: Overvoltage Protection Controller
Supplier Device Package: 10-UDFN (2.5x2)
Current - Supply: 20 µA
DigiKey Programmable: Not Verified
Description: IC OCP TVS ESD USB POS 10-UDFN
Packaging: Bulk
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V ~ 20V
Applications: Overvoltage Protection Controller
Supplier Device Package: 10-UDFN (2.5x2)
Current - Supply: 20 µA
DigiKey Programmable: Not Verified
auf Bestellung 1300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 567+ | 1.06 EUR |
| EMI6316FCTBG |
|
Hersteller: onsemi
Description: FILTER RC 40 OHMS/7PF ESD SMD
Packaging: Bulk
Package / Case: 15-XFBGA, WLCSP
Size / Dimension: 0.061" L x 0.061" W (1.55mm x 1.55mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 40Ohms, C = 7pF (Total)
Height: 0.020" (0.50mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC
Resistance - Channel (Ohms): 40
ESD Protection: Yes
Number of Channels: 6
Description: FILTER RC 40 OHMS/7PF ESD SMD
Packaging: Bulk
Package / Case: 15-XFBGA, WLCSP
Size / Dimension: 0.061" L x 0.061" W (1.55mm x 1.55mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 40Ohms, C = 7pF (Total)
Height: 0.020" (0.50mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC
Resistance - Channel (Ohms): 40
ESD Protection: Yes
Number of Channels: 6
auf Bestellung 360000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1095+ | 0.54 EUR |
| FGB3245G2-F085C |
|
Hersteller: onsemi
Description: IGBT 450V 41A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.6 µs
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 900ns/5.4µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 23 nC
Grade: Automotive
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 150 W
Qualification: AEC-Q101
Description: IGBT 450V 41A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.6 µs
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 900ns/5.4µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 23 nC
Grade: Automotive
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 150 W
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 2.42 EUR |
| 1600+ | 2.26 EUR |
| 2400+ | 2.25 EUR |
| FGB3245G2-F085C |
|
Hersteller: onsemi
Description: IGBT 450V 41A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.6 µs
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 900ns/5.4µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 23 nC
Grade: Automotive
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 150 W
Qualification: AEC-Q101
Description: IGBT 450V 41A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.6 µs
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 900ns/5.4µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 23 nC
Grade: Automotive
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 150 W
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.97 EUR |
| SI3443DV |
|
Hersteller: onsemi
Description: MOSFET P-CH 20V 4A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Description: MOSFET P-CH 20V 4A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74VHC1GT126MU3TCG |
|
Hersteller: onsemi
Description: IC BUFF 1.65V 6-UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-UDFN (1x1)
Description: IC BUFF 1.65V 6-UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-UDFN (1x1)
auf Bestellung 53 Stücke:
Lieferzeit 10-14 Tag (e)
| MC100LVEL33DTG |
|
Hersteller: onsemi
Description: IC DIVIDER BY 4 1-BIT 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Divide-by-4
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Trigger Type: Positive, Negative
Supplier Device Package: 8-TSSOP
Voltage - Supply: 3 V ~ 3.8 V
Count Rate: 4 GHz
Number of Bits per Element: 2
Description: IC DIVIDER BY 4 1-BIT 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Divide-by-4
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Trigger Type: Positive, Negative
Supplier Device Package: 8-TSSOP
Voltage - Supply: 3 V ~ 3.8 V
Count Rate: 4 GHz
Number of Bits per Element: 2
auf Bestellung 27641 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 16.86 EUR |
| NSV30100LT1G |
|
Hersteller: onsemi
Description: TRANS PNP 30V 1A SOT23-3
Qualification: AEC-Q101
Power - Max: 710 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS PNP 30V 1A SOT23-3
Qualification: AEC-Q101
Power - Max: 710 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.32 EUR |
| NSV30100LT1G |
|
Hersteller: onsemi
Description: TRANS PNP 30V 1A SOT23-3
Qualification: AEC-Q101
Power - Max: 710 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PNP 30V 1A SOT23-3
Qualification: AEC-Q101
Power - Max: 710 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 1.38 EUR |
| MT9M413C36STM-DR |
|
Hersteller: onsemi
Description: SENSOR IMAGE MONO CMOS 280-PGA
Frames per Second: 500.0
Supplier Device Package: 280-PGA
Active Pixel Array: 1280H x 1024V
Pixel Size: 12µm x 12µm
Voltage - Supply: 3.3V
Operating Temperature: -5°C ~ 60°C
Type: CMOS
Package / Case: 280-PGA
Packaging: Tray
Description: SENSOR IMAGE MONO CMOS 280-PGA
Frames per Second: 500.0
Supplier Device Package: 280-PGA
Active Pixel Array: 1280H x 1024V
Pixel Size: 12µm x 12µm
Voltage - Supply: 3.3V
Operating Temperature: -5°C ~ 60°C
Type: CMOS
Package / Case: 280-PGA
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVMUN5338DW1T3G |
|
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms, 47kOhms
Resistor - Emitter Base (R2): 10kOhms, 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms, 47kOhms
Resistor - Emitter Base (R2): 10kOhms, 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 44+ | 0.48 EUR |
| 72+ | 0.3 EUR |
| 115+ | 0.18 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| 2000+ | 0.11 EUR |
| 5000+ | 0.092 EUR |
| MUN5330DW1T1 |
|
auf Bestellung 105000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3620+ | 0.14 EUR |
| NSVMUN5336DW1T1G |
|
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NSVMUN5336DW1T1G |
|
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX85C4V7 |
|
Hersteller: onsemi
Description: DIODE ZENER 4.7V 1W DO41
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 13 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±6%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 µA @ 1.5 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Description: DIODE ZENER 4.7V 1W DO41
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 13 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±6%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 µA @ 1.5 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74LVX4066MELG |
|
Hersteller: onsemi
Description: IC SW SPST-NOX4 20OHM SOEIAJ-14
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 85°C (TA)
On-State Resistance (Max): 20Ohm
-3db Bandwidth: 160MHz
Supplier Device Package: SOEIAJ-14
Voltage - Supply, Single (V+): 2V ~ 6V
Crosstalk: -80dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 4
Description: IC SW SPST-NOX4 20OHM SOEIAJ-14
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 85°C (TA)
On-State Resistance (Max): 20Ohm
-3db Bandwidth: 160MHz
Supplier Device Package: SOEIAJ-14
Voltage - Supply, Single (V+): 2V ~ 6V
Crosstalk: -80dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 4
auf Bestellung 47344 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 807+ | 0.74 EUR |
| UF3C120040K3S |
|
Hersteller: onsemi
Description: SICFET N-CH 1200V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 12V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: SICFET N-CH 1200V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 12V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 115 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 53.8 EUR |
| 30+ | 34.77 EUR |
| 60+ | 32.51 EUR |
| UF3C120040K4S |
|
Hersteller: onsemi
Description: SICFET N-CH 1200V 65A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 12V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: SICFET N-CH 1200V 65A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 12V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 3902 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 54.04 EUR |
| 30+ | 34.93 EUR |
| 60+ | 32.67 EUR |
| 120+ | 31.12 EUR |
| MBR1660 |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 16A TO2202
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 16A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Description: DIODE SCHOTTKY 60V 16A TO2202
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 16A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
auf Bestellung 244 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.7 EUR |
| 50+ | 2.82 EUR |
| 100+ | 2.53 EUR |
| NTND31211PZTAG |
|
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 0.127A 6XLLGA
Input Capacitance (Ciss) (Max) @ Vds: 12.8pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 127mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 125mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel
Mounting Type: Surface Mount
Package / Case: 6-XFLGA
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-XLLGA (0.9x0.65)
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Description: MOSFET 2P-CH 20V 0.127A 6XLLGA
Input Capacitance (Ciss) (Max) @ Vds: 12.8pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 127mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 125mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel
Mounting Type: Surface Mount
Package / Case: 6-XFLGA
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-XLLGA (0.9x0.65)
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NLVHCT14ADR2G |
Hersteller: onsemi
Description: IC INVERT SCHMITT 6CH 1IN 14SOIC
Qualification: AEC-Q100
Current - Quiescent (Max): 1 µA
Number of Circuits: 6
Grade: Automotive
Max Propagation Delay @ V, Max CL: 32ns @ 5V, 50pF
Input Logic Level - Low: 0.1V ~ 0.26V
Input Logic Level - High: 3.98V ~ 5.4V
Supplier Device Package: 14-SOIC
Number of Inputs: 1
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Description: IC INVERT SCHMITT 6CH 1IN 14SOIC
Qualification: AEC-Q100
Current - Quiescent (Max): 1 µA
Number of Circuits: 6
Grade: Automotive
Max Propagation Delay @ V, Max CL: 32ns @ 5V, 50pF
Input Logic Level - Low: 0.1V ~ 0.26V
Input Logic Level - High: 3.98V ~ 5.4V
Supplier Device Package: 14-SOIC
Number of Inputs: 1
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
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| NLVHCT14ADR2G |
Hersteller: onsemi
Description: IC INVERT SCHMITT 6CH 1IN 14SOIC
Qualification: AEC-Q100
Current - Quiescent (Max): 1 µA
Number of Circuits: 6
Grade: Automotive
Max Propagation Delay @ V, Max CL: 32ns @ 5V, 50pF
Input Logic Level - Low: 0.1V ~ 0.26V
Input Logic Level - High: 3.98V ~ 5.4V
Supplier Device Package: 14-SOIC
Number of Inputs: 1
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Description: IC INVERT SCHMITT 6CH 1IN 14SOIC
Qualification: AEC-Q100
Current - Quiescent (Max): 1 µA
Number of Circuits: 6
Grade: Automotive
Max Propagation Delay @ V, Max CL: 32ns @ 5V, 50pF
Input Logic Level - Low: 0.1V ~ 0.26V
Input Logic Level - High: 3.98V ~ 5.4V
Supplier Device Package: 14-SOIC
Number of Inputs: 1
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH