CPH6341-M-TL-W onsemi
Hersteller: onsemi
Description: MOSFET P-CH 30V 5A CPH6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 6-CPH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.74 EUR |
| 20+ | 1.09 EUR |
| 50+ | 0.8 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.55 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
13 Stücke
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Technische Details CPH6341-M-TL-W onsemi
Description: MOSFET P-CH 30V 5A CPH6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 2.6V @ 1mA, Supplier Device Package: 6-CPH, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V.
Weitere Produktangebote CPH6341-M-TL-W
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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CPH6341-M-TL-W | onsemi |
Description: MOSFET P-CH 30V 5A CPH6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: 6-CPH Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
CPH6341-M-TL-W | ON Semiconductor |
MOSFET PCH 4V DRIVE SERIES |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| CPH6341-M-TL-W |
|
Hersteller: onsemi
Description: MOSFET P-CH 30V 5A CPH6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 6-CPH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Description: MOSFET P-CH 30V 5A CPH6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 6-CPH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CPH6341-M-TL-W |
|
Hersteller: ON Semiconductor
MOSFET PCH 4V DRIVE SERIES
MOSFET PCH 4V DRIVE SERIES
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH