BCP5610MTWG ON Semiconductor
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Technische Details BCP5610MTWG ON Semiconductor
Description: TRANS NPN 80V 1A 3WDFNW, Packaging: Bulk, Package / Case: 3-WDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V, Frequency - Transition: 140MHz, Supplier Device Package: 3-WDFNW (2x2), Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 1.5 W.
Weitere Produktangebote BCP5610MTWG
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BCP5610MTWG | Hersteller : ON Semiconductor |
 General Purpose Transistor Medium Power, NPN |
Produkt ist nicht verfügbar |
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BCP5610MTWG | Hersteller : onsemi |
Description: TRANS NPN 80V 1A 3WDFNW Packaging: Bulk Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 140MHz Supplier Device Package: 3-WDFNW (2x2) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W |
Produkt ist nicht verfügbar |
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BCP5610MTWG | Hersteller : onsemi |
Bipolar Transistors - BJT 80V1ANPNWDFNW3 2X2 |
Produkt ist nicht verfügbar |