| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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| 1N5231C | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 5.1V; bulk; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Kind of package: bulk Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| 1N5231CTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 5.1V; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SS32 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape Mounting: SMD Kind of package: reel; tape Max. forward voltage: 0.5V Load current: 3A Max. off-state voltage: 20V Max. forward impulse current: 100A Case: SMC Type of diode: Schottky rectifying Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MUN5235DW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Current gain: 140 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SMUN5235DW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SMUN5235DW1T3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SBRS8340T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 40V; 4A; reel,tape Semiconductor structure: single diode Case: SMC Mounting: SMD Max. forward voltage: 0.5V Load current: 4A Max. off-state voltage: 40V Max. forward impulse current: 80A Application: automotive industry Kind of package: reel; tape Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SBRS8130LNT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape Semiconductor structure: single diode Case: SMB Mounting: SMD Max. forward voltage: 0.45V Load current: 2A Max. off-state voltage: 30V Max. forward impulse current: 40A Application: automotive industry Kind of package: reel; tape Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SBRS81100NT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape Semiconductor structure: single diode Case: SMB Mounting: SMD Max. forward voltage: 0.75V Load current: 2A Max. off-state voltage: 0.1kV Max. forward impulse current: 50A Application: automotive industry Kind of package: reel; tape Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SBRS8120NT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape Semiconductor structure: single diode Case: SMB Mounting: SMD Max. forward voltage: 0.6V Load current: 1A Max. off-state voltage: 20V Max. forward impulse current: 40A Application: automotive industry Kind of package: reel; tape Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SBRS8140NT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape Semiconductor structure: single diode Case: SMB Mounting: SMD Max. forward voltage: 0.6V Load current: 1A Max. off-state voltage: 40V Max. forward impulse current: 40A Application: automotive industry Kind of package: reel; tape Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SBRS8190NT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape Semiconductor structure: single diode Case: SMB Mounting: SMD Max. forward voltage: 0.75V Load current: 2A Max. off-state voltage: 90V Max. forward impulse current: 50A Application: automotive industry Kind of package: reel; tape Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SS28 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 80V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.85V Max. forward impulse current: 50A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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UF3C065030K4S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 62A Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 62A Pulsed drain current: 230A Power dissipation: 441W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 27mΩ Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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UF3C065080K4S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 23A Technology: SiC Mounting: THT Case: TO247-4 Kind of package: tube Gate charge: 43nC On-state resistance: 80mΩ Drain current: 23A Gate-source voltage: ±25V Power dissipation: 190W Pulsed drain current: 65A Drain-source voltage: 650V Kind of channel: enhancement Version: ESD Type of transistor: N-JFET / N-MOSFET Features of semiconductor devices: Kelvin terminal Kind of transistor: cascode Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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UF3C065030K3S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 62A Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 62A Pulsed drain current: 230A Power dissipation: 441W Case: TO247-3 Gate-source voltage: ±25V On-state resistance: 27mΩ Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SMMUN2113LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FDT86113LZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; 2.2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.3A Power dissipation: 2.2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 189mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1759 Stücke: Lieferzeit 14-21 Tag (e) |
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MMUN2113LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 80...140 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FDD86113LZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; 3.1W; DPAK,TO252 Polarisation: unipolar Case: DPAK; TO252 Kind of channel: enhancement Type of transistor: N-MOSFET Technology: PowerTrench® Mounting: SMD Gate charge: 6nC On-state resistance: 0.104Ω Power dissipation: 3.1W Drain current: 4.2A Drain-source voltage: 100V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MMUN2113LT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Polarisation: bipolar Kind of transistor: BRT Case: SOT23; TO236AB Type of transistor: PNP Kind of package: reel; tape Mounting: SMD Collector current: 0.1A Power dissipation: 0.246W Collector-emitter voltage: 50V Current gain: 80...140 Base-emitter resistor: 47kΩ Base resistor: 47kΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SZESD9B3.3ST5G | ONSEMI |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 5÷7V; bidirectional; SOD923F; reel,tape Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 5...7V Semiconductor structure: bidirectional Case: SOD923F Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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RB751V40T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Kind of package: reel; tape |
auf Bestellung 9038 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSVRB751V40T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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BZX79C11 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 11V; bulk; CASE017AG; single diode; BZX79C Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX79C |
auf Bestellung 4990 Stücke: Lieferzeit 14-21 Tag (e) |
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| BZX79C11-T50A | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 11V; Ammo Pack; CASE017AG; single diode; BZX79C Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Kind of package: Ammo Pack Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX79C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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SZMMSZ4703T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 16V; SMD; SOD123; reel,tape; single diode Mounting: SMD Tolerance: ±5% Manufacturer series: MMSZ4xxTxG Type of diode: Zener Case: SOD123 Application: automotive industry Kind of package: reel; tape Semiconductor structure: single diode Power dissipation: 0.5W Zener voltage: 16V |
auf Bestellung 5833 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ4703T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 16V; SMD; SOD123; reel,tape; single diode Mounting: SMD Tolerance: ±5% Manufacturer series: MMSZ4xxTxG Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MM5Z4703T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 16V; SMD; SOD523F; reel,tape; single diode Mounting: SMD Tolerance: ±5% Manufacturer series: MM5Z4xxxTxG Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Kind of package: reel; tape Case: SOD523F Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MMSZ5246BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 16V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
auf Bestellung 5322 Stücke: Lieferzeit 14-21 Tag (e) |
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FDT86102LZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 6.6A; 2.2W; SOT223 Case: SOT223 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: PowerTrench® Kind of package: reel; tape Polarisation: unipolar Gate charge: 25nC On-state resistance: 46mΩ Power dissipation: 2.2W Drain current: 6.6A Gate-source voltage: ±20V Drain-source voltage: 100V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FDB86102LZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 50A; 3.1W; D2PAK Case: D2PAK Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: UniFET™ Kind of package: reel; tape Polarisation: unipolar Gate charge: 21nC On-state resistance: 42mΩ Power dissipation: 3.1W Drain current: 30A Gate-source voltage: ±20V Pulsed drain current: 50A Drain-source voltage: 100V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FDD86102 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 75A; 62W; DPAK Case: DPAK Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 13.4nC On-state resistance: 24mΩ Power dissipation: 62W Drain current: 36A Gate-source voltage: ±20V Pulsed drain current: 75A Drain-source voltage: 100V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FDMC86102 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 60A; 41W; Power33 Case: Power33 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 18nC On-state resistance: 41mΩ Power dissipation: 41W Drain current: 20A Gate-source voltage: ±20V Pulsed drain current: 60A Drain-source voltage: 100V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FDMC86102L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 41W; MLP8 Case: MLP8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: PowerTrench® Kind of package: reel; tape Polarisation: unipolar Gate charge: 22nC On-state resistance: 39mΩ Power dissipation: 41W Gate-source voltage: ±20V Drain-source voltage: 100V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FDMC86102LZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FDMS86102LZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 69W; PQFN8 Case: PQFN8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar On-state resistance: 42mΩ Power dissipation: 69W Drain current: 22A Gate-source voltage: ±20V Drain-source voltage: 100V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MC74ACT253DR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 3-state,multiplexer; Ch: 2; IN: 6; TTL; SMD; SOIC16; ACT Supply voltage: 4.5...5.5V DC Manufacturer series: ACT Operating temperature: -40...85°C Mounting: SMD Kind of output: 3-state Family: ACT Case: SOIC16 Type of integrated circuit: digital Kind of package: reel; tape Kind of integrated circuit: 3-state; multiplexer Technology: TTL Number of channels: 2 Number of inputs: 6 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MM74HCT05MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 10ns Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: HCT Kind of output: open drain Delay time: 10ns |
auf Bestellung 1695 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HCT05MX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Delay time: 10ns Kind of output: open drain Family: HCT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74HCT4051ADTG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8 Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Number of inputs: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP16 Manufacturer series: HCT Family: HCT Operating temperature: -55...125°C Supply voltage: 2...6V DC; 2...12V DC Kind of package: tube |
auf Bestellung 297 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HCT4051ADG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8 Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Number of inputs: 8 Technology: CMOS; TTL Mounting: SMD Case: SOIC16 Manufacturer series: HCT Family: HCT Operating temperature: -55...125°C Supply voltage: 2...6V DC; 2...12V DC Kind of package: tube |
auf Bestellung 234 Stücke: Lieferzeit 14-21 Tag (e) |
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| M74HCT4051ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11 Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Number of inputs: 11 Technology: CMOS; TTL Mounting: SMD Case: TSSOP16 Manufacturer series: HCT Family: HCT Operating temperature: -55...125°C Supply voltage: 2...6V DC; 2...12V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MC74HCT4051ADR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8 Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Number of inputs: 8 Technology: CMOS; TTL Mounting: SMD Case: SOIC16 Manufacturer series: HCT Family: HCT Operating temperature: -55...125°C Supply voltage: 2...6V DC; 2...12V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NCP1380BDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; SO8; 9÷28VDC Operating temperature: -40...125°C Case: SO8 Output current: -800...500mA Number of channels: 1 Operating voltage: 9...28V DC Type of integrated circuit: PMIC Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NCP1380CDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; SO8; 9÷28VDC Operating temperature: -40...125°C Case: SO8 Output current: -800...500mA Number of channels: 1 Operating voltage: 9...28V DC Type of integrated circuit: PMIC Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NCP1380DDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; SO8; 9÷28VDC Operating temperature: -40...125°C Case: SO8 Output current: -800...500mA Number of channels: 1 Operating voltage: 9...28V DC Type of integrated circuit: PMIC Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BDV64BG | ONSEMI |
Category: PNP THT Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3 Type of transistor: PNP Polarisation: bipolar Power dissipation: 125W Case: TO247-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 100V Kind of transistor: Darlington Collector current: 10A |
auf Bestellung 175 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDB0170N607L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 300A Pulsed drain current: 1620A Power dissipation: 250W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 173nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NCP115ASN280T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.3A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 2.8V Output current: 0.3A Case: TSOP5 Mounting: SMD Manufacturer series: NCP115 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.7...5.5V |
auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
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H11L2M | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Schmitt trigger Insulation voltage: 4.17kV Case: DIP6 Turn-on time: 4µs Turn-off time: 4µs Manufacturer series: H11LXM |
auf Bestellung 402 Stücke: Lieferzeit 14-21 Tag (e) |
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H11L3M | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Schmitt trigger Insulation voltage: 4.17kV Case: DIP6 Turn-on time: 0.1µs Turn-off time: 0.12µs Manufacturer series: H11LXM |
auf Bestellung 66 Stücke: Lieferzeit 14-21 Tag (e) |
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H11L3SR2M | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: gate; logic Insulation voltage: 4.17kV Transfer rate: 1Mbps Case: PDIP6 Turn-on time: 1µs Turn-off time: 1.2µs Max. off-state voltage: 6V Output voltage: 0...16V Manufacturer series: H11L3 |
auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDP025N06 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 265A; Idm: 1060A; 395W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 265A Pulsed drain current: 1060A Power dissipation: 395W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: THT Gate charge: 174nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTHL025N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 70A Pulsed drain current: 323A Power dissipation: 174W Case: TO247-3 Gate-source voltage: -5...18V On-state resistance: 24mΩ Mounting: THT Gate charge: 164nC Kind of package: tube Kind of channel: enhancement Technology: SiC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTH4L025N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 70A Pulsed drain current: 323A Power dissipation: 174W Case: TO247-4 Gate-source voltage: -5...18V On-state resistance: 24mΩ Mounting: THT Gate charge: 164nC Kind of package: tube Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTMYS025N06CLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 21A Pulsed drain current: 103A Power dissipation: 7.6W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 27.5mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NVH4L025N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 70A Pulsed drain current: 323A Power dissipation: 174W Case: TO247-4 Gate-source voltage: -5...18V On-state resistance: 24mΩ Mounting: THT Gate charge: 164C Kind of package: tube Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NVMYS025N06CLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 21A Pulsed drain current: 103A Power dissipation: 7.6W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 27.5mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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|
FDS4672A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8 Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 21mΩ Power dissipation: 2.5W Drain current: 11A Gate-source voltage: ±12V Drain-source voltage: 40V Polarisation: unipolar |
auf Bestellung 2160 Stücke: Lieferzeit 14-21 Tag (e) |
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| 1N5231C |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5231CTR |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS32 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 100A
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 100A
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUN5235DW1T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 140
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 140
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMUN5235DW1T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMUN5235DW1T3G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SBRS8340T3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 4A; reel,tape
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Max. forward voltage: 0.5V
Load current: 4A
Max. off-state voltage: 40V
Max. forward impulse current: 80A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 4A; reel,tape
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Max. forward voltage: 0.5V
Load current: 4A
Max. off-state voltage: 40V
Max. forward impulse current: 80A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBRS8130LNT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Max. forward voltage: 0.45V
Load current: 2A
Max. off-state voltage: 30V
Max. forward impulse current: 40A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Max. forward voltage: 0.45V
Load current: 2A
Max. off-state voltage: 30V
Max. forward impulse current: 40A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBRS81100NT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Max. forward voltage: 0.75V
Load current: 2A
Max. off-state voltage: 0.1kV
Max. forward impulse current: 50A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Max. forward voltage: 0.75V
Load current: 2A
Max. off-state voltage: 0.1kV
Max. forward impulse current: 50A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBRS8120NT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Max. forward voltage: 0.6V
Load current: 1A
Max. off-state voltage: 20V
Max. forward impulse current: 40A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Max. forward voltage: 0.6V
Load current: 1A
Max. off-state voltage: 20V
Max. forward impulse current: 40A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBRS8140NT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Max. forward voltage: 0.6V
Load current: 1A
Max. off-state voltage: 40V
Max. forward impulse current: 40A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Max. forward voltage: 0.6V
Load current: 1A
Max. off-state voltage: 40V
Max. forward impulse current: 40A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBRS8190NT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Max. forward voltage: 0.75V
Load current: 2A
Max. off-state voltage: 90V
Max. forward impulse current: 50A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Max. forward voltage: 0.75V
Load current: 2A
Max. off-state voltage: 90V
Max. forward impulse current: 50A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS28 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UF3C065030K4S |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 230A
Power dissipation: 441W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 230A
Power dissipation: 441W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UF3C065080K4S |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Technology: SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Gate charge: 43nC
On-state resistance: 80mΩ
Drain current: 23A
Gate-source voltage: ±25V
Power dissipation: 190W
Pulsed drain current: 65A
Drain-source voltage: 650V
Kind of channel: enhancement
Version: ESD
Type of transistor: N-JFET / N-MOSFET
Features of semiconductor devices: Kelvin terminal
Kind of transistor: cascode
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Technology: SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Gate charge: 43nC
On-state resistance: 80mΩ
Drain current: 23A
Gate-source voltage: ±25V
Power dissipation: 190W
Pulsed drain current: 65A
Drain-source voltage: 650V
Kind of channel: enhancement
Version: ESD
Type of transistor: N-JFET / N-MOSFET
Features of semiconductor devices: Kelvin terminal
Kind of transistor: cascode
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UF3C065030K3S |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 230A
Power dissipation: 441W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 230A
Power dissipation: 441W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMMUN2113LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDT86113LZ |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; 2.2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 189mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; 2.2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 189mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1759 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 48+ | 1.5 EUR |
| 79+ | 0.91 EUR |
| 86+ | 0.83 EUR |
| 105+ | 0.68 EUR |
| 115+ | 0.63 EUR |
| 500+ | 0.57 EUR |
| MMUN2113LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDD86113LZ |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; 3.1W; DPAK,TO252
Polarisation: unipolar
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Mounting: SMD
Gate charge: 6nC
On-state resistance: 0.104Ω
Power dissipation: 3.1W
Drain current: 4.2A
Drain-source voltage: 100V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; 3.1W; DPAK,TO252
Polarisation: unipolar
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Mounting: SMD
Gate charge: 6nC
On-state resistance: 0.104Ω
Power dissipation: 3.1W
Drain current: 4.2A
Drain-source voltage: 100V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMUN2113LT3G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT23; TO236AB
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.246W
Collector-emitter voltage: 50V
Current gain: 80...140
Base-emitter resistor: 47kΩ
Base resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT23; TO236AB
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.246W
Collector-emitter voltage: 50V
Current gain: 80...140
Base-emitter resistor: 47kΩ
Base resistor: 47kΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SZESD9B3.3ST5G |
|
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5÷7V; bidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7V
Semiconductor structure: bidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5÷7V; bidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7V
Semiconductor structure: bidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RB751V40T1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Kind of package: reel; tape
auf Bestellung 9038 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 834+ | 0.086 EUR |
| 1047+ | 0.068 EUR |
| 1174+ | 0.061 EUR |
| 1578+ | 0.045 EUR |
| 1819+ | 0.039 EUR |
| 3000+ | 0.03 EUR |
| 6000+ | 0.029 EUR |
| NSVRB751V40T1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX79C11 |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; bulk; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; bulk; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
auf Bestellung 4990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 834+ | 0.086 EUR |
| 1064+ | 0.067 EUR |
| 1389+ | 0.051 EUR |
| 1985+ | 0.036 EUR |
| 2041+ | 0.035 EUR |
| BZX79C11-T50A |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; Ammo Pack; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; Ammo Pack; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZMMSZ4703T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; SOD123; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Manufacturer series: MMSZ4xxTxG
Type of diode: Zener
Case: SOD123
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Power dissipation: 0.5W
Zener voltage: 16V
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; SOD123; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Manufacturer series: MMSZ4xxTxG
Type of diode: Zener
Case: SOD123
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Power dissipation: 0.5W
Zener voltage: 16V
auf Bestellung 5833 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 596+ | 0.12 EUR |
| 711+ | 0.1 EUR |
| 926+ | 0.077 EUR |
| 1047+ | 0.068 EUR |
| MMSZ4703T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; SOD123; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Manufacturer series: MMSZ4xxTxG
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; SOD123; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Manufacturer series: MMSZ4xxTxG
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM5Z4703T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; SOD523F; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Manufacturer series: MM5Z4xxxTxG
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; SOD523F; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Manufacturer series: MM5Z4xxxTxG
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ5246BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 5322 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 500+ | 0.14 EUR |
| 667+ | 0.11 EUR |
| 728+ | 0.098 EUR |
| 969+ | 0.074 EUR |
| 1155+ | 0.062 EUR |
| 1471+ | 0.049 EUR |
| 1761+ | 0.041 EUR |
| 2075+ | 0.034 EUR |
| 3000+ | 0.03 EUR |
| FDT86102LZ |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.6A; 2.2W; SOT223
Case: SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 25nC
On-state resistance: 46mΩ
Power dissipation: 2.2W
Drain current: 6.6A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.6A; 2.2W; SOT223
Case: SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 25nC
On-state resistance: 46mΩ
Power dissipation: 2.2W
Drain current: 6.6A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDB86102LZ |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 50A; 3.1W; D2PAK
Case: D2PAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: UniFET™
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 42mΩ
Power dissipation: 3.1W
Drain current: 30A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 100V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 50A; 3.1W; D2PAK
Case: D2PAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: UniFET™
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 42mΩ
Power dissipation: 3.1W
Drain current: 30A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 100V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDD86102 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 75A; 62W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 13.4nC
On-state resistance: 24mΩ
Power dissipation: 62W
Drain current: 36A
Gate-source voltage: ±20V
Pulsed drain current: 75A
Drain-source voltage: 100V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 75A; 62W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 13.4nC
On-state resistance: 24mΩ
Power dissipation: 62W
Drain current: 36A
Gate-source voltage: ±20V
Pulsed drain current: 75A
Drain-source voltage: 100V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMC86102 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 60A; 41W; Power33
Case: Power33
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 41mΩ
Power dissipation: 41W
Drain current: 20A
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 100V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 60A; 41W; Power33
Case: Power33
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 41mΩ
Power dissipation: 41W
Drain current: 20A
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 100V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC86102L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 41W; MLP8
Case: MLP8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 22nC
On-state resistance: 39mΩ
Power dissipation: 41W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 41W; MLP8
Case: MLP8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 22nC
On-state resistance: 39mΩ
Power dissipation: 41W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMC86102LZ |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86102LZ |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 69W; PQFN8
Case: PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 42mΩ
Power dissipation: 69W
Drain current: 22A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 69W; PQFN8
Case: PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 42mΩ
Power dissipation: 69W
Drain current: 22A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74ACT253DR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,multiplexer; Ch: 2; IN: 6; TTL; SMD; SOIC16; ACT
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Operating temperature: -40...85°C
Mounting: SMD
Kind of output: 3-state
Family: ACT
Case: SOIC16
Type of integrated circuit: digital
Kind of package: reel; tape
Kind of integrated circuit: 3-state; multiplexer
Technology: TTL
Number of channels: 2
Number of inputs: 6
Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,multiplexer; Ch: 2; IN: 6; TTL; SMD; SOIC16; ACT
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Operating temperature: -40...85°C
Mounting: SMD
Kind of output: 3-state
Family: ACT
Case: SOIC16
Type of integrated circuit: digital
Kind of package: reel; tape
Kind of integrated circuit: 3-state; multiplexer
Technology: TTL
Number of channels: 2
Number of inputs: 6
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MM74HCT05MTCX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 10ns
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: HCT
Kind of output: open drain
Delay time: 10ns
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 10ns
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: HCT
Kind of output: open drain
Delay time: 10ns
auf Bestellung 1695 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 132+ | 0.54 EUR |
| 157+ | 0.46 EUR |
| 174+ | 0.41 EUR |
| 250+ | 0.38 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.33 EUR |
| MM74HCT05MX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Delay time: 10ns
Kind of output: open drain
Family: HCT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Delay time: 10ns
Kind of output: open drain
Family: HCT
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74HCT4051ADTG |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 2...6V DC; 2...12V DC
Kind of package: tube
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 2...6V DC; 2...12V DC
Kind of package: tube
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| 81+ | 0.89 EUR |
| 91+ | 0.79 EUR |
| 288+ | 0.68 EUR |
| MC74HCT4051ADG |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 2...6V DC; 2...12V DC
Kind of package: tube
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 2...6V DC; 2...12V DC
Kind of package: tube
auf Bestellung 234 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 59+ | 1.23 EUR |
| 97+ | 0.74 EUR |
| 117+ | 0.61 EUR |
| 132+ | 0.54 EUR |
| 150+ | 0.48 EUR |
| M74HCT4051ADTR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 11
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 2...6V DC; 2...12V DC
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 11
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 2...6V DC; 2...12V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74HCT4051ADR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 2...6V DC; 2...12V DC
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 2...6V DC; 2...12V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCP1380BDR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 9÷28VDC
Operating temperature: -40...125°C
Case: SO8
Output current: -800...500mA
Number of channels: 1
Operating voltage: 9...28V DC
Type of integrated circuit: PMIC
Mounting: SMD
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 9÷28VDC
Operating temperature: -40...125°C
Case: SO8
Output current: -800...500mA
Number of channels: 1
Operating voltage: 9...28V DC
Type of integrated circuit: PMIC
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCP1380CDR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 9÷28VDC
Operating temperature: -40...125°C
Case: SO8
Output current: -800...500mA
Number of channels: 1
Operating voltage: 9...28V DC
Type of integrated circuit: PMIC
Mounting: SMD
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 9÷28VDC
Operating temperature: -40...125°C
Case: SO8
Output current: -800...500mA
Number of channels: 1
Operating voltage: 9...28V DC
Type of integrated circuit: PMIC
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCP1380DDR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 9÷28VDC
Operating temperature: -40...125°C
Case: SO8
Output current: -800...500mA
Number of channels: 1
Operating voltage: 9...28V DC
Type of integrated circuit: PMIC
Mounting: SMD
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 9÷28VDC
Operating temperature: -40...125°C
Case: SO8
Output current: -800...500mA
Number of channels: 1
Operating voltage: 9...28V DC
Type of integrated circuit: PMIC
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BDV64BG |
|
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 100V
Kind of transistor: Darlington
Collector current: 10A
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 100V
Kind of transistor: Darlington
Collector current: 10A
auf Bestellung 175 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 4.09 EUR |
| 28+ | 2.59 EUR |
| 32+ | 2.29 EUR |
| 60+ | 2.26 EUR |
| FDB0170N607L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1620A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1620A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCP115ASN280T2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.3A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.8V
Output current: 0.3A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP115
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.3A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.8V
Output current: 0.3A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP115
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 47+ | 1.52 EUR |
| H11L2M |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 4.17kV
Case: DIP6
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: H11LXM
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 4.17kV
Case: DIP6
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: H11LXM
auf Bestellung 402 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 82+ | 0.87 EUR |
| 139+ | 0.52 EUR |
| 158+ | 0.45 EUR |
| 168+ | 0.43 EUR |
| H11L3M |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 4.17kV
Case: DIP6
Turn-on time: 0.1µs
Turn-off time: 0.12µs
Manufacturer series: H11LXM
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 4.17kV
Case: DIP6
Turn-on time: 0.1µs
Turn-off time: 0.12µs
Manufacturer series: H11LXM
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 66+ | 1.09 EUR |
| H11L3SR2M |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 4.17kV
Transfer rate: 1Mbps
Case: PDIP6
Turn-on time: 1µs
Turn-off time: 1.2µs
Max. off-state voltage: 6V
Output voltage: 0...16V
Manufacturer series: H11L3
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 4.17kV
Transfer rate: 1Mbps
Case: PDIP6
Turn-on time: 1µs
Turn-off time: 1.2µs
Max. off-state voltage: 6V
Output voltage: 0...16V
Manufacturer series: H11L3
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 74+ | 0.97 EUR |
| 102+ | 0.71 EUR |
| 106+ | 0.68 EUR |
| FDP025N06 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 265A; Idm: 1060A; 395W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 265A
Pulsed drain current: 1060A
Power dissipation: 395W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 265A; Idm: 1060A; 395W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 265A
Pulsed drain current: 1060A
Power dissipation: 395W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTHL025N065SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTH4L025N065SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMYS025N06CLTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 103A
Power dissipation: 7.6W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 27.5mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 103A
Power dissipation: 7.6W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 27.5mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVH4L025N065SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164C
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164C
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMYS025N06CLTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 103A
Power dissipation: 7.6W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 27.5mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 103A
Power dissipation: 7.6W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 27.5mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDS4672A |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 21mΩ
Power dissipation: 2.5W
Drain current: 11A
Gate-source voltage: ±12V
Drain-source voltage: 40V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 21mΩ
Power dissipation: 2.5W
Drain current: 11A
Gate-source voltage: ±12V
Drain-source voltage: 40V
Polarisation: unipolar
auf Bestellung 2160 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 58+ | 1.24 EUR |
| 80+ | 0.9 EUR |