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FDMS10C4D2N

FDMS10C4D2N onsemi

fdms10c4d2n-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 100V 17A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.04 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDMS10C4D2N onsemi

Description: MOSFET N-CH 100V 17A 8PQFN, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-PQFN (5x6), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote FDMS10C4D2N nach Preis ab 1.92 EUR bis 6.21 EUR

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FDMS10C4D2N FDMS10C4D2N Hersteller : onsemi / Fairchild FDMS10C4D2N-D.pdf MOSFETs Energy Inversion DC-AC
auf Bestellung 2545 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.65 EUR
10+3.22 EUR
100+2.34 EUR
500+2.27 EUR
1000+2.06 EUR
3000+1.92 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDMS10C4D2N FDMS10C4D2N Hersteller : onsemi fdms10c4d2n-d.pdf Description: MOSFET N-CH 100V 17A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 50 V
auf Bestellung 10519 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.02 EUR
10+3.94 EUR
100+2.75 EUR
500+2.25 EUR
1000+2.09 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FDMS10C4D2N FDMS10C4D2N Hersteller : onsemi fdms10c4d2n-d.pdf MOSFETs Energy Inversion DC-AC
auf Bestellung 2147 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.21 EUR
10+4.07 EUR
100+2.87 EUR
500+2.38 EUR
1000+2.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH