FDMS10C4D2N onsemi
Hersteller: onsemi
Description: MOSFET N-CH 100V 17A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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Technische Details FDMS10C4D2N onsemi
Description: MOSFET N-CH 100V 17A 8PQFN, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-PQFN (5x6), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote FDMS10C4D2N nach Preis ab 1.92 EUR bis 6.21 EUR
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FDMS10C4D2N | onsemi / Fairchild |
MOSFETs Energy Inversion DC-AC |
auf Bestellung 2545 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS10C4D2N | onsemi |
Description: MOSFET N-CH 100V 17A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 50 V |
auf Bestellung 10519 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS10C4D2N | onsemi |
MOSFETs Energy Inversion DC-AC |
auf Bestellung 2147 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDMS10C4D2N |
|
Hersteller: onsemi / Fairchild
MOSFETs Energy Inversion DC-AC
MOSFETs Energy Inversion DC-AC
auf Bestellung 2545 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.65 EUR |
| 10+ | 3.22 EUR |
| 100+ | 2.34 EUR |
| 500+ | 2.27 EUR |
| 1000+ | 2.06 EUR |
| 3000+ | 1.92 EUR |
| FDMS10C4D2N |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 17A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 50 V
Description: MOSFET N-CH 100V 17A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 50 V
auf Bestellung 10519 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.02 EUR |
| 10+ | 3.94 EUR |
| 100+ | 2.75 EUR |
| 500+ | 2.25 EUR |
| 1000+ | 2.09 EUR |
| FDMS10C4D2N |
|
Hersteller: onsemi
MOSFETs Energy Inversion DC-AC
MOSFETs Energy Inversion DC-AC
auf Bestellung 2147 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.21 EUR |
| 10+ | 4.07 EUR |
| 100+ | 2.87 EUR |
| 500+ | 2.38 EUR |
| 1000+ | 2.22 EUR |