Technische Details HUF75339P3 Harris Corporation
Description: MOSFET N-CH 55V 75A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V.
Weitere Produktangebote HUF75339P3 nach Preis ab 1.51 EUR bis 5.37 EUR
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HUF75339P3 | onsemi / Fairchild |
 MOSFETs 75a 55V 0.012Ohm NCh UltraFET |
auf Bestellung 563 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75339P3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220AB Gate charge: 130nC On-state resistance: 12mΩ Polarisation: unipolar Technology: UltraFET® Kind of package: tube Mounting: THT Type of transistor: N-MOSFET Drain current: 75A Gate-source voltage: ±20V Kind of channel: enhancement Case: TO220AB Drain-source voltage: 55V Power dissipation: 200W |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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HUF75339P3 | onsemi |
Description: MOSFET N-CH 55V 75A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
auf Bestellung 3199 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75339P3 | onsemi |
MOSFETs 75a 55V 0.012Ohm NCh UltraFET |
auf Bestellung 683 Stücke: Lieferzeit 10-14 Tag (e) |
|
| HUF75339P3 |
|
Hersteller: onsemi / Fairchild
MOSFETs 75a 55V 0.012Ohm NCh UltraFET
MOSFETs 75a 55V 0.012Ohm NCh UltraFET
auf Bestellung 563 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.17 EUR |
| 10+ | 2.03 EUR |
| 100+ | 1.96 EUR |
| 500+ | 1.82 EUR |
| 1000+ | 1.68 EUR |
| HUF75339P3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220AB
Gate charge: 130nC
On-state resistance: 12mΩ
Polarisation: unipolar
Technology: UltraFET®
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Drain current: 75A
Gate-source voltage: ±20V
Kind of channel: enhancement
Case: TO220AB
Drain-source voltage: 55V
Power dissipation: 200W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220AB
Gate charge: 130nC
On-state resistance: 12mΩ
Polarisation: unipolar
Technology: UltraFET®
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Drain current: 75A
Gate-source voltage: ±20V
Kind of channel: enhancement
Case: TO220AB
Drain-source voltage: 55V
Power dissipation: 200W
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 4.26 EUR |
| HUF75339P3 |
|
Hersteller: onsemi
Description: MOSFET N-CH 55V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: MOSFET N-CH 55V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 3199 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.94 EUR |
| 50+ | 2.43 EUR |
| 100+ | 2.19 EUR |
| 500+ | 1.76 EUR |
| 1000+ | 1.63 EUR |
| 2000+ | 1.51 EUR |
| HUF75339P3 |
|
Hersteller: onsemi
MOSFETs 75a 55V 0.012Ohm NCh UltraFET
MOSFETs 75a 55V 0.012Ohm NCh UltraFET
auf Bestellung 683 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.37 EUR |
| 10+ | 2.93 EUR |
| 100+ | 2.37 EUR |