| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NTTFS6H850NTAG | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 68A; Idm: 300A; 53W; WDFN8 Pulsed drain current: 300A Power dissipation: 53W Gate charge: 19nC Polarisation: unipolar Drain current: 68A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: WDFN8 On-state resistance: 9.5mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTTFS6H854NTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 44A; Idm: 175A; 34W; WDFN8 Pulsed drain current: 175A Power dissipation: 34W Gate charge: 13nC Polarisation: unipolar Drain current: 44A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: WDFN8 On-state resistance: 14.5mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NVTFS6H854NTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 44A; Idm: 175A; 34W; WDFN8 Pulsed drain current: 175A Power dissipation: 34W Gate charge: 13nC Polarisation: unipolar Drain current: 44A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: WDFN8 On-state resistance: 14.5mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NVTFS6H860NTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 119A; 23W; WDFN8 Pulsed drain current: 119A Power dissipation: 23W Gate charge: 8.7nC Polarisation: unipolar Drain current: 30A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: WDFN8 On-state resistance: 21.1mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NVTFS6H880NTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 21A; Idm: 80A; 16W; WDFN8 Pulsed drain current: 80A Power dissipation: 16W Gate charge: 6.9nC Polarisation: unipolar Drain current: 21A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: WDFN8 On-state resistance: 32mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NVTFS6H888NTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 47A; 9.2W; WDFN8 Pulsed drain current: 47A Power dissipation: 9.2W Gate charge: 4.7nC Polarisation: unipolar Drain current: 12A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: WDFN8 On-state resistance: 55mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
MMBZ5248ELT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMBZ52xxELT1G |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SZMMBZ5248ELT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMBZ52xxELT1G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
 |
MURD320T4G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 35ns; DPAK; Ufmax: 950mV; reel,tape Type of diode: rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.95V Kind of package: reel; tape Reverse recovery time: 35ns |
auf Bestellung 1480 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRS3200T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.59V Kind of package: reel; tape |
auf Bestellung 955 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTTFS6H850NTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 68A; Idm: 300A; 53W; WDFN8
Pulsed drain current: 300A
Power dissipation: 53W
Gate charge: 19nC
Polarisation: unipolar
Drain current: 68A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 9.5mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 68A; Idm: 300A; 53W; WDFN8
Pulsed drain current: 300A
Power dissipation: 53W
Gate charge: 19nC
Polarisation: unipolar
Drain current: 68A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 9.5mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTTFS6H854NTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 44A; Idm: 175A; 34W; WDFN8
Pulsed drain current: 175A
Power dissipation: 34W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 14.5mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 44A; Idm: 175A; 34W; WDFN8
Pulsed drain current: 175A
Power dissipation: 34W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 14.5mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS6H854NTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 44A; Idm: 175A; 34W; WDFN8
Pulsed drain current: 175A
Power dissipation: 34W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 14.5mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 44A; Idm: 175A; 34W; WDFN8
Pulsed drain current: 175A
Power dissipation: 34W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 14.5mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS6H860NTAG |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 119A; 23W; WDFN8
Pulsed drain current: 119A
Power dissipation: 23W
Gate charge: 8.7nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 21.1mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 119A; 23W; WDFN8
Pulsed drain current: 119A
Power dissipation: 23W
Gate charge: 8.7nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 21.1mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS6H880NTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21A; Idm: 80A; 16W; WDFN8
Pulsed drain current: 80A
Power dissipation: 16W
Gate charge: 6.9nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 32mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21A; Idm: 80A; 16W; WDFN8
Pulsed drain current: 80A
Power dissipation: 16W
Gate charge: 6.9nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 32mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS6H888NTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 47A; 9.2W; WDFN8
Pulsed drain current: 47A
Power dissipation: 9.2W
Gate charge: 4.7nC
Polarisation: unipolar
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 55mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 47A; 9.2W; WDFN8
Pulsed drain current: 47A
Power dissipation: 9.2W
Gate charge: 4.7nC
Polarisation: unipolar
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 55mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBZ5248ELT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMBZ52xxELT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMBZ52xxELT1G
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZMMBZ5248ELT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMBZ52xxELT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMBZ52xxELT1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MURD320T4G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; DPAK; Ufmax: 950mV; reel,tape
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Kind of package: reel; tape
Reverse recovery time: 35ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; DPAK; Ufmax: 950mV; reel,tape
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Kind of package: reel; tape
Reverse recovery time: 35ns
auf Bestellung 1480 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 132+ | 0.64 EUR |
| 145+ | 0.58 EUR |
| 158+ | 0.54 EUR |
| 177+ | 0.48 EUR |
| 188+ | 0.45 EUR |
| 194+ | 0.44 EUR |
| 197+ | 0.43 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.38 EUR |
| MBRS3200T3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
auf Bestellung 955 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 152+ | 0.56 EUR |
| 196+ | 0.44 EUR |
| 218+ | 0.39 EUR |
| 278+ | 0.31 EUR |
| 309+ | 0.27 EUR |
| 360+ | 0.24 EUR |
| 500+ | 0.21 EUR |