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NTTFS6H854NTAG ONSEMI nttfs6h854n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 44A; Idm: 175A; 34W; WDFN8
Pulsed drain current: 175A
Power dissipation: 34W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 14.5mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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NVTFS6H854NTAG ONSEMI nvtfs6h854n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 44A; Idm: 175A; 34W; WDFN8
Pulsed drain current: 175A
Power dissipation: 34W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 14.5mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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NVTFS6H860NTAG ONSEMI Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 119A; 23W; WDFN8
Pulsed drain current: 119A
Power dissipation: 23W
Gate charge: 8.7nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 21.1mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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NVTFS6H880NTAG ONSEMI nvtfs6h880n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21A; Idm: 80A; 16W; WDFN8
Pulsed drain current: 80A
Power dissipation: 16W
Gate charge: 6.9nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 32mΩ
Mounting: SMD
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NVTFS6H888NTAG ONSEMI nvtfs6h888n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 47A; 9.2W; WDFN8
Pulsed drain current: 47A
Power dissipation: 9.2W
Gate charge: 4.7nC
Polarisation: unipolar
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 55mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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MMBZ5248ELT1G MMBZ5248ELT1G ONSEMI MMBZ52xxELT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMBZ52xxELT1G
Produkt ist nicht verfügbar
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SZMMBZ5248ELT1G SZMMBZ5248ELT1G ONSEMI MMBZ52xxELT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMBZ52xxELT1G
Application: automotive industry
Produkt ist nicht verfügbar
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MURD320T4G MURD320T4G ONSEMI murd320-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; DPAK; Ufmax: 950mV; reel,tape
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Kind of package: reel; tape
Reverse recovery time: 35ns
auf Bestellung 1480 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.64 EUR
145+0.58 EUR
158+0.54 EUR
177+0.48 EUR
188+0.45 EUR
194+0.44 EUR
197+0.43 EUR
500+0.4 EUR
1000+0.38 EUR
Mindestbestellmenge: 132 Stücke
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MBRS3200T3G MBRS3200T3G ONSEMI MBRS3200T3G-DTE.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
auf Bestellung 955 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.56 EUR
196+0.44 EUR
218+0.39 EUR
278+0.31 EUR
309+0.27 EUR
360+0.24 EUR
500+0.21 EUR
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NTTFS6H854NTAG nttfs6h854n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 44A; Idm: 175A; 34W; WDFN8
Pulsed drain current: 175A
Power dissipation: 34W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 14.5mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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NVTFS6H854NTAG nvtfs6h854n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 44A; Idm: 175A; 34W; WDFN8
Pulsed drain current: 175A
Power dissipation: 34W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 14.5mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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NVTFS6H860NTAG
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 119A; 23W; WDFN8
Pulsed drain current: 119A
Power dissipation: 23W
Gate charge: 8.7nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 21.1mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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NVTFS6H880NTAG nvtfs6h880n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21A; Idm: 80A; 16W; WDFN8
Pulsed drain current: 80A
Power dissipation: 16W
Gate charge: 6.9nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 32mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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NVTFS6H888NTAG nvtfs6h888n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 47A; 9.2W; WDFN8
Pulsed drain current: 47A
Power dissipation: 9.2W
Gate charge: 4.7nC
Polarisation: unipolar
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 55mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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MMBZ5248ELT1G MMBZ52xxELT1G.PDF
MMBZ5248ELT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMBZ52xxELT1G
Produkt ist nicht verfügbar
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SZMMBZ5248ELT1G MMBZ52xxELT1G.PDF
SZMMBZ5248ELT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMBZ52xxELT1G
Application: automotive industry
Produkt ist nicht verfügbar
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MURD320T4G murd320-d.pdf
MURD320T4G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; DPAK; Ufmax: 950mV; reel,tape
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Kind of package: reel; tape
Reverse recovery time: 35ns
auf Bestellung 1480 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
132+0.64 EUR
145+0.58 EUR
158+0.54 EUR
177+0.48 EUR
188+0.45 EUR
194+0.44 EUR
197+0.43 EUR
500+0.4 EUR
1000+0.38 EUR
Mindestbestellmenge: 132 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MBRS3200T3G MBRS3200T3G-DTE.PDF
MBRS3200T3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
auf Bestellung 955 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
152+0.56 EUR
196+0.44 EUR
218+0.39 EUR
278+0.31 EUR
309+0.27 EUR
360+0.24 EUR
500+0.21 EUR
Mindestbestellmenge: 152 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 242 484 726 968 1210 1452 1694 1936 2178 2420 2423 2424 2425 2426 2427 2428