Foto | Bezeichnung | Hersteller | Beschreibung |
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S215FA | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 150V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 150V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.95V Max. forward impulse current: 50A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SS33 | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape; 2.27W Mounting: SMD Case: SMC Max. off-state voltage: 30V Max. forward voltage: 0.5V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 100A Power dissipation: 2.27W Kind of package: reel; tape Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MMDL770T1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD323; SMD; 70V; reel,tape; 200mW Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 70V Semiconductor structure: single diode Max. forward voltage: 1V Kind of package: reel; tape Power dissipation: 0.2W Capacitance: 1pF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NTD20P06LT4G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -15.5A Power dissipation: 65W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 26nC |
auf Bestellung 1932 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138K | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23 Kind of channel: enhancement Polarisation: unipolar Type of transistor: N-MOSFET Case: SOT23 Mounting: SMD Gate charge: 2.4nC Drain current: 0.22A Power dissipation: 0.35W On-state resistance: 1.6Ω Gate-source voltage: ±12V Kind of package: reel; tape Drain-source voltage: 50V |
auf Bestellung 7020 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23 Kind of channel: enhancement Polarisation: unipolar Type of transistor: N-MOSFET Case: SOT23 Mounting: SMD Gate charge: 1.7nC Drain current: 0.22A Power dissipation: 0.36W On-state resistance: 3.5Ω Gate-source voltage: ±20V Kind of package: reel; tape Drain-source voltage: 50V |
auf Bestellung 244 Stücke: Lieferzeit 14-21 Tag (e) |
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BCP55 | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 1.5A; 1.5W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1.5A Power dissipation: 1.5W Case: SOT223 Current gain: 40...250 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
MBR30H100MFST3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape Max. off-state voltage: 100V Max. forward voltage: 0.9V Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 0.3kA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: DFN5x6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MBR30H100CTG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V Max. off-state voltage: 100V Max. load current: 30A Max. forward voltage: 0.8V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 250A Kind of package: tube Type of diode: Schottky rectifying Mounting: THT Case: TO220AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
2SK3557-6-TB-E | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 15V Drain current: 10mA Power dissipation: 0.2W Case: SC59 Gate-source voltage: -15V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
2SK3557-7-TB-E | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 15V Drain current: 16mA Power dissipation: 0.2W Case: SC59 Gate-source voltage: -15V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MMBZ6V8ALT1G | ONSEMI |
![]() Description: Diode: TVS array; 6.8V; 2.5A; 24W; double,common anode; SOT23; ±5% Type of diode: TVS array Breakdown voltage: 6.8V Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 4.5V Kind of package: reel; tape Max. forward impulse current: 2.5A Tolerance: ±5% Peak pulse power dissipation: 24W Version: ESD Leakage current: 0.5µA |
auf Bestellung 6951 Stücke: Lieferzeit 14-21 Tag (e) |
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SZMMBZ6V8ALT1G | ONSEMI |
![]() Description: Diode: TVS array; 6.8V; 2.5A; 25W; double,common anode; SOT23; ±5% Type of diode: TVS array Breakdown voltage: 6.8V Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 4.5V Kind of package: reel; tape Application: automotive industry Max. forward impulse current: 2.5A Tolerance: ±5% Peak pulse power dissipation: 25W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SZMMBZ6V8ALT3G | ONSEMI |
![]() Description: Diode: TVS array; 6.46V; 2.5A; 24W; unidirectional,common anode Type of diode: TVS array Breakdown voltage: 6.46V Semiconductor structure: common anode; unidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 4.5V Application: automotive industry Number of channels: 2 Max. forward impulse current: 2.5A Peak pulse power dissipation: 24W Version: ESD Operating temperature: -55...150°C Leakage current: 0.5µA |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBZ5V6ALT1G | ONSEMI |
![]() Description: Diode: TVS array; 5.6V; 3A; 24W; double,common anode; SOT23; ±5% Type of diode: TVS array Breakdown voltage: 5.6V Max. forward impulse current: 3A Peak pulse power dissipation: 24W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 3V Kind of package: reel; tape Tolerance: ±5% Version: ESD Leakage current: 5µA |
auf Bestellung 8637 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS004N08C | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 80A; Idm: 637A; 125W; Power56 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 80V Drain current: 80A Pulsed drain current: 637A Power dissipation: 125W Case: Power56 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FDMS015N04B | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 400A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 118nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FDMS0306AS | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 49A Pulsed drain current: 100A Power dissipation: 59W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FDMS2D5N08C | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 105A; Idm: 823A; 138W; Power56 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 80V Drain current: 105A Pulsed drain current: 823A Power dissipation: 138W Case: Power56 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 84nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BVSS84LT1G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.225W; SOT23 Case: SOT23 Drain-source voltage: -50V Drain current: -130mA On-state resistance: 10Ω Type of transistor: P-MOSFET Power dissipation: 0.225W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD |
auf Bestellung 3151 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC163ADG | ONSEMI |
![]() Description: IC: digital; 4bit,binary counter,presettable,synchronous reset Type of integrated circuit: digital Case: SOIC16 Family: HC Manufacturer series: HC Kind of package: tube Mounting: SMD Operating temperature: -55...125°C Number of channels: 1 Supply voltage: 2...6V DC Kind of integrated circuit: 4bit; binary counter; presettable; synchronous reset Number of inputs: 9 Technology: CMOS |
auf Bestellung 308 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC163ADR2G | ONSEMI |
![]() Description: IC: digital; 4bit,binary counter,presettable,synchronous reset Type of integrated circuit: digital Case: SOIC16 Family: HC Manufacturer series: HC Kind of package: reel; tape Mounting: SMD Operating temperature: -55...125°C Number of channels: 1 Supply voltage: 2...6V DC Kind of integrated circuit: 4bit; binary counter; presettable; synchronous reset Number of inputs: 9 Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
PCA9306FMUTCG | ONSEMI |
![]() Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; logic level voltage translator Number of channels: 2 Supply voltage: 1...3.6V DC Mounting: SMD Case: uDFN8 Operating temperature: -55...125°C Kind of package: reel; tape Number of inputs: 2 Number of outputs: 2 Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing Kind of output: open drain |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCA9306AMUTCG | ONSEMI |
![]() Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2 Case: UQFN8 Mounting: SMD Kind of package: reel; tape Kind of integrated circuit: bidirectional; logic level voltage translator Type of integrated circuit: digital Operating temperature: -55...125°C Number of channels: 2 Supply voltage: 1...3.6V DC Number of outputs: 2 Number of inputs: 2 Integrated circuit features: auto-direction sensing |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PCA9306FMUTAG | ONSEMI |
![]() Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; logic level voltage translator Number of channels: 2 Supply voltage: 1...3.6V DC Mounting: SMD Case: uDFN8 Operating temperature: -55...125°C Kind of package: reel; tape Number of inputs: 2 Number of outputs: 2 Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing Kind of output: open drain |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MC74AC08DG | ONSEMI |
![]() Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Family: AC |
auf Bestellung 429 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74AC08DR2G | ONSEMI |
![]() Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: AND Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SOIC14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC Manufacturer series: AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MC74AC08DTR2G | ONSEMI |
![]() Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 40µA Family: AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MM74HCT32MTCX | ONSEMI |
![]() Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Operating temperature: -40...85°C Case: TSSOP14 Number of inputs: 2 Supply voltage: 4.5...5.5V DC Number of channels: quad; 4 Delay time: 10ns Kind of package: reel; tape Kind of gate: OR Technology: CMOS Family: HCT Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC74HCT32ADR2G | ONSEMI |
![]() Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns Case: SO14 Mounting: SMD Kind of package: reel; tape Delay time: 15ns Kind of gate: OR Technology: CMOS Family: HCT Operating temperature: -55...125°C Number of inputs: 2 Supply voltage: 2...6V DC Type of integrated circuit: digital Number of channels: quad; 4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
MC74HCT32ADTR2G | ONSEMI |
![]() Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; HCT; 2÷6VDC; HCT Case: TSSOP14 Mounting: SMD Kind of package: reel; tape Manufacturer series: HCT Kind of gate: OR Technology: CMOS; TTL Family: HCT Operating temperature: -55...125°C Number of inputs: 2 Supply voltage: 2...6V DC Type of integrated circuit: digital Number of channels: 4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MM74HCT32MX | ONSEMI |
![]() Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Operating temperature: -40...85°C Case: SO14 Number of inputs: 2 Supply voltage: 4.5...5.5V DC Number of channels: quad; 4 Delay time: 10ns Kind of package: reel; tape Kind of gate: OR Technology: CMOS Family: HCT Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC74AC32DG | ONSEMI |
![]() Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Family: AC |
auf Bestellung 314 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74AC10DG | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: 3 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SOIC14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Family: AC Manufacturer series: AC |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
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CAV24C32WE-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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D44VH10G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 100V; 15A; 83W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 15A Power dissipation: 83W Case: TO220AB Mounting: THT Kind of package: tube |
auf Bestellung 415 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC8030 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 14W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 12A Power dissipation: 14W Case: WDFN8 Gate-source voltage: ±12V On-state resistance: 16mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FCB110N65F | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 35A Power dissipation: 357W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 105A Gate charge: 98nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MJF15030G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 150V; 8A; 36W; TO220FP Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 8A Case: TO220FP Current gain: 40 Mounting: THT Frequency: 30MHz Power dissipation: 36W Kind of package: tube |
auf Bestellung 242 Stücke: Lieferzeit 14-21 Tag (e) |
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MJF15031G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 150V; 8A; 36W; TO220FP Polarisation: bipolar Case: TO220FP Mounting: THT Type of transistor: PNP Kind of package: tube Power dissipation: 36W Collector current: 8A Current gain: 40 Collector-emitter voltage: 150V Frequency: 30MHz |
auf Bestellung 239 Stücke: Lieferzeit 14-21 Tag (e) |
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NTS2101PT1G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -8V Drain current: -1.1A Power dissipation: 0.29W Case: SC70; SOT323 Gate-source voltage: ±8V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTZD3155CT2G | ONSEMI |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 0.39/-0.31A Power dissipation: 0.25W Case: SOT563F Gate-source voltage: ±6V On-state resistance: 0.55/0.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 3469 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT2369ALT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 0.2A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 40...120 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC20ADG | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: dual; 2 Number of inputs: 4 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Family: HC Kind of package: tube Operating temperature: -55...125°C Technology: CMOS |
Produkt ist nicht verfügbar |
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MC74HC20ADR2G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: dual; 2 Number of inputs: 4 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Family: HC Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC74HC20ADTR2G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: dual; 2 Number of inputs: 4 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Family: HC Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
MBT3904DW1T3G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.15W Case: SC70-6; SC88; SOT363 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
auf Bestellung 9750 Stücke: Lieferzeit 14-21 Tag (e) |
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GBPC1202 | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 200V; If: 12A; Ifsm: 300A Type of bridge rectifier: single-phase Version: square Electrical mounting: THT Max. forward voltage: 1.1V Load current: 12A Max. forward impulse current: 0.3kA Max. off-state voltage: 200V Kind of package: bulk Leads: connectors FASTON Case: GBPC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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1N4148-T26A | ONSEMI |
![]() Description: Diode: switching; THT; 100V; 0.3A; Ammo Pack; DO35; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: DO35 Kind of package: Ammo Pack |
auf Bestellung 34305 Stücke: Lieferzeit 14-21 Tag (e) |
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1N3595TR | ONSEMI |
![]() Description: Diode: rectifying; THT; 150V; 200mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 3uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 8pF Max. forward impulse current: 4A Case: DO35 Max. forward voltage: 1V Leakage current: 3µA Power dissipation: 0.5W Reverse recovery time: 3µs |
auf Bestellung 4961 Stücke: Lieferzeit 14-21 Tag (e) |
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ES1G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMA Max. forward voltage: 1.3V Leakage current: 0.1mA Kind of package: reel; tape Max. forward impulse current: 30A Capacitance: 10pF Power dissipation: 1.47W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC74VHCT245ADWG | ONSEMI |
![]() Description: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; SO20WB Type of integrated circuit: digital Kind of integrated circuit: bus transceiver; octal Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: SO20WB Manufacturer series: VHCT Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Family: VHCT Kind of package: reel; tape |
auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) |
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74VHCT245AMTCX | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Quiescent current: 40µA Kind of output: 3-state |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MUN5211T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Current gain: 60 Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
auf Bestellung 544 Stücke: Lieferzeit 14-21 Tag (e) |
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SS34 | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape; 2.27W Mounting: SMD Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Schottky rectifying Max. forward voltage: 0.5V Case: SMC Power dissipation: 2.27W Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 100A |
auf Bestellung 3333 Stücke: Lieferzeit 14-21 Tag (e) |
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MBR1100G | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 0.79V; bulk Case: DO41 Mounting: THT Max. off-state voltage: 100V Max. load current: 2A Max. forward voltage: 0.79V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 50A Kind of package: bulk Type of diode: Schottky rectifying |
auf Bestellung 706 Stücke: Lieferzeit 14-21 Tag (e) |
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MBR1100RLG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 0.69V Case: DO41 Mounting: THT Max. off-state voltage: 100V Max. forward voltage: 0.69V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 50A Kind of package: reel; tape Type of diode: Schottky rectifying |
auf Bestellung 4984 Stücke: Lieferzeit 14-21 Tag (e) |
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74VHC374MTC | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; tube Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: tube Trigger: positive-edge-triggered Kind of output: 3-state Technology: CMOS Manufacturer series: VHC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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74VHC374MTCX | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Trigger: positive-edge-triggered Kind of output: 3-state Technology: CMOS Manufacturer series: VHC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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74VHC374MX | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; SO20-W; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Mounting: SMD Case: SO20-W Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Trigger: positive-edge-triggered Kind of output: 3-state Technology: CMOS Manufacturer series: VHC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
S215FA |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 150V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 150V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SS33 |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape; 2.27W
Mounting: SMD
Case: SMC
Max. off-state voltage: 30V
Max. forward voltage: 0.5V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Power dissipation: 2.27W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape; 2.27W
Mounting: SMD
Case: SMC
Max. off-state voltage: 30V
Max. forward voltage: 0.5V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Power dissipation: 2.27W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMDL770T1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 1pF
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 1pF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTD20P06LT4G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15.5A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 26nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15.5A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 26nC
auf Bestellung 1932 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
59+ | 1.22 EUR |
73+ | 0.98 EUR |
124+ | 0.58 EUR |
131+ | 0.55 EUR |
BSS138K |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Gate charge: 2.4nC
Drain current: 0.22A
Power dissipation: 0.35W
On-state resistance: 1.6Ω
Gate-source voltage: ±12V
Kind of package: reel; tape
Drain-source voltage: 50V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Gate charge: 2.4nC
Drain current: 0.22A
Power dissipation: 0.35W
On-state resistance: 1.6Ω
Gate-source voltage: ±12V
Kind of package: reel; tape
Drain-source voltage: 50V
auf Bestellung 7020 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
589+ | 0.12 EUR |
837+ | 0.086 EUR |
958+ | 0.075 EUR |
1846+ | 0.039 EUR |
1954+ | 0.037 EUR |
BSS138 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Gate charge: 1.7nC
Drain current: 0.22A
Power dissipation: 0.36W
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Kind of package: reel; tape
Drain-source voltage: 50V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Gate charge: 1.7nC
Drain current: 0.22A
Power dissipation: 0.36W
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Kind of package: reel; tape
Drain-source voltage: 50V
auf Bestellung 244 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
244+ | 0.29 EUR |
BCP55 |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MBR30H100MFST3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DFN5x6
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DFN5x6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MBR30H100CTG |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V
Max. off-state voltage: 100V
Max. load current: 30A
Max. forward voltage: 0.8V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AB
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V
Max. off-state voltage: 100V
Max. load current: 30A
Max. forward voltage: 0.8V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SK3557-6-TB-E |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SK3557-7-TB-E |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 16mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 16mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBZ6V8ALT1G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 24W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Kind of package: reel; tape
Max. forward impulse current: 2.5A
Tolerance: ±5%
Peak pulse power dissipation: 24W
Version: ESD
Leakage current: 0.5µA
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 24W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Kind of package: reel; tape
Max. forward impulse current: 2.5A
Tolerance: ±5%
Peak pulse power dissipation: 24W
Version: ESD
Leakage current: 0.5µA
auf Bestellung 6951 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
758+ | 0.094 EUR |
1719+ | 0.042 EUR |
2500+ | 0.029 EUR |
2718+ | 0.026 EUR |
SZMMBZ6V8ALT1G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 25W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 2.5A
Tolerance: ±5%
Peak pulse power dissipation: 25W
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 25W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 2.5A
Tolerance: ±5%
Peak pulse power dissipation: 25W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SZMMBZ6V8ALT3G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46V; 2.5A; 24W; unidirectional,common anode
Type of diode: TVS array
Breakdown voltage: 6.46V
Semiconductor structure: common anode; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Application: automotive industry
Number of channels: 2
Max. forward impulse current: 2.5A
Peak pulse power dissipation: 24W
Version: ESD
Operating temperature: -55...150°C
Leakage current: 0.5µA
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46V; 2.5A; 24W; unidirectional,common anode
Type of diode: TVS array
Breakdown voltage: 6.46V
Semiconductor structure: common anode; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Application: automotive industry
Number of channels: 2
Max. forward impulse current: 2.5A
Peak pulse power dissipation: 24W
Version: ESD
Operating temperature: -55...150°C
Leakage current: 0.5µA
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.055 EUR |
MMBZ5V6ALT1G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 3A; 24W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 5.6V
Max. forward impulse current: 3A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Kind of package: reel; tape
Tolerance: ±5%
Version: ESD
Leakage current: 5µA
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 3A; 24W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 5.6V
Max. forward impulse current: 3A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Kind of package: reel; tape
Tolerance: ±5%
Version: ESD
Leakage current: 5µA
auf Bestellung 8637 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
481+ | 0.15 EUR |
851+ | 0.084 EUR |
1090+ | 0.066 EUR |
1969+ | 0.036 EUR |
2075+ | 0.034 EUR |
3000+ | 0.033 EUR |
FDMS004N08C |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; Idm: 637A; 125W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Pulsed drain current: 637A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; Idm: 637A; 125W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Pulsed drain current: 637A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDMS015N04B |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDMS0306AS |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 59W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 59W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS2D5N08C |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 105A; Idm: 823A; 138W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 105A
Pulsed drain current: 823A
Power dissipation: 138W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 105A; Idm: 823A; 138W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 105A
Pulsed drain current: 823A
Power dissipation: 138W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BVSS84LT1G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.225W; SOT23
Case: SOT23
Drain-source voltage: -50V
Drain current: -130mA
On-state resistance: 10Ω
Type of transistor: P-MOSFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.225W; SOT23
Case: SOT23
Drain-source voltage: -50V
Drain current: -130mA
On-state resistance: 10Ω
Type of transistor: P-MOSFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
auf Bestellung 3151 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
313+ | 0.23 EUR |
368+ | 0.19 EUR |
468+ | 0.15 EUR |
650+ | 0.11 EUR |
685+ | 0.1 EUR |
MC74HC163ADG |
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Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; 4bit,binary counter,presettable,synchronous reset
Type of integrated circuit: digital
Case: SOIC16
Family: HC
Manufacturer series: HC
Kind of package: tube
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 2...6V DC
Kind of integrated circuit: 4bit; binary counter; presettable; synchronous reset
Number of inputs: 9
Technology: CMOS
Category: Counters/dividers
Description: IC: digital; 4bit,binary counter,presettable,synchronous reset
Type of integrated circuit: digital
Case: SOIC16
Family: HC
Manufacturer series: HC
Kind of package: tube
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 2...6V DC
Kind of integrated circuit: 4bit; binary counter; presettable; synchronous reset
Number of inputs: 9
Technology: CMOS
auf Bestellung 308 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
88+ | 0.82 EUR |
98+ | 0.73 EUR |
110+ | 0.65 EUR |
132+ | 0.54 EUR |
186+ | 0.39 EUR |
188+ | 0.38 EUR |
196+ | 0.37 EUR |
MC74HC163ADR2G |
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Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; 4bit,binary counter,presettable,synchronous reset
Type of integrated circuit: digital
Case: SOIC16
Family: HC
Manufacturer series: HC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 2...6V DC
Kind of integrated circuit: 4bit; binary counter; presettable; synchronous reset
Number of inputs: 9
Technology: CMOS
Category: Counters/dividers
Description: IC: digital; 4bit,binary counter,presettable,synchronous reset
Type of integrated circuit: digital
Case: SOIC16
Family: HC
Manufacturer series: HC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 2...6V DC
Kind of integrated circuit: 4bit; binary counter; presettable; synchronous reset
Number of inputs: 9
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PCA9306FMUTCG |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: uDFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: uDFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PCA9306AMUTCG |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Case: UQFN8
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: bidirectional; logic level voltage translator
Type of integrated circuit: digital
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 1...3.6V DC
Number of outputs: 2
Number of inputs: 2
Integrated circuit features: auto-direction sensing
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Case: UQFN8
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: bidirectional; logic level voltage translator
Type of integrated circuit: digital
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 1...3.6V DC
Number of outputs: 2
Number of inputs: 2
Integrated circuit features: auto-direction sensing
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PCA9306FMUTAG |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: uDFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: uDFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74AC08DG |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
auf Bestellung 429 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
147+ | 0.49 EUR |
164+ | 0.44 EUR |
180+ | 0.4 EUR |
190+ | 0.38 EUR |
275+ | 0.36 EUR |
MC74AC08DR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74AC08DTR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: AC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM74HCT32MTCX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: TSSOP14
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
Number of channels: quad; 4
Delay time: 10ns
Kind of package: reel; tape
Kind of gate: OR
Technology: CMOS
Family: HCT
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: TSSOP14
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
Number of channels: quad; 4
Delay time: 10ns
Kind of package: reel; tape
Kind of gate: OR
Technology: CMOS
Family: HCT
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74HCT32ADR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Delay time: 15ns
Kind of gate: OR
Technology: CMOS
Family: HCT
Operating temperature: -55...125°C
Number of inputs: 2
Supply voltage: 2...6V DC
Type of integrated circuit: digital
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Delay time: 15ns
Kind of gate: OR
Technology: CMOS
Family: HCT
Operating temperature: -55...125°C
Number of inputs: 2
Supply voltage: 2...6V DC
Type of integrated circuit: digital
Number of channels: quad; 4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74HCT32ADTR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; HCT; 2÷6VDC; HCT
Case: TSSOP14
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: HCT
Kind of gate: OR
Technology: CMOS; TTL
Family: HCT
Operating temperature: -55...125°C
Number of inputs: 2
Supply voltage: 2...6V DC
Type of integrated circuit: digital
Number of channels: 4
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; HCT; 2÷6VDC; HCT
Case: TSSOP14
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: HCT
Kind of gate: OR
Technology: CMOS; TTL
Family: HCT
Operating temperature: -55...125°C
Number of inputs: 2
Supply voltage: 2...6V DC
Type of integrated circuit: digital
Number of channels: 4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM74HCT32MX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
Number of channels: quad; 4
Delay time: 10ns
Kind of package: reel; tape
Kind of gate: OR
Technology: CMOS
Family: HCT
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
Number of channels: quad; 4
Delay time: 10ns
Kind of package: reel; tape
Kind of gate: OR
Technology: CMOS
Family: HCT
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74AC32DG |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
52+ | 1.4 EUR |
85+ | 0.85 EUR |
117+ | 0.61 EUR |
164+ | 0.44 EUR |
174+ | 0.41 EUR |
275+ | 0.4 EUR |
MC74AC10DG |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
Manufacturer series: AC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
Manufacturer series: AC
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
61+ | 1.19 EUR |
74+ | 0.97 EUR |
88+ | 0.82 EUR |
CAV24C32WE-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
D44VH10G |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 15A; 83W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 15A; 83W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of package: tube
auf Bestellung 415 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
73+ | 0.99 EUR |
78+ | 0.93 EUR |
92+ | 0.78 EUR |
98+ | 0.74 EUR |
100+ | 0.72 EUR |
250+ | 0.71 EUR |
FDMC8030 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 14W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 14W
Case: WDFN8
Gate-source voltage: ±12V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 14W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 14W
Case: WDFN8
Gate-source voltage: ±12V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCB110N65F |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 105A
Gate charge: 98nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 105A
Gate charge: 98nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MJF15030G |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 36W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Case: TO220FP
Current gain: 40
Mounting: THT
Frequency: 30MHz
Power dissipation: 36W
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 36W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Case: TO220FP
Current gain: 40
Mounting: THT
Frequency: 30MHz
Power dissipation: 36W
Kind of package: tube
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.16 EUR |
49+ | 1.47 EUR |
61+ | 1.19 EUR |
65+ | 1.12 EUR |
100+ | 1.07 EUR |
MJF15031G |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 8A; 36W; TO220FP
Polarisation: bipolar
Case: TO220FP
Mounting: THT
Type of transistor: PNP
Kind of package: tube
Power dissipation: 36W
Collector current: 8A
Current gain: 40
Collector-emitter voltage: 150V
Frequency: 30MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 8A; 36W; TO220FP
Polarisation: bipolar
Case: TO220FP
Mounting: THT
Type of transistor: PNP
Kind of package: tube
Power dissipation: 36W
Collector current: 8A
Current gain: 40
Collector-emitter voltage: 150V
Frequency: 30MHz
auf Bestellung 239 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
27+ | 2.75 EUR |
31+ | 2.33 EUR |
43+ | 1.67 EUR |
46+ | 1.57 EUR |
100+ | 1.53 EUR |
NTS2101PT1G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -1.1A
Power dissipation: 0.29W
Case: SC70; SOT323
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -1.1A
Power dissipation: 0.29W
Case: SC70; SOT323
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
205+ | 0.35 EUR |
264+ | 0.27 EUR |
298+ | 0.24 EUR |
676+ | 0.11 EUR |
715+ | 0.1 EUR |
NTZD3155CT2G |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3469 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
250+ | 0.29 EUR |
325+ | 0.22 EUR |
472+ | 0.15 EUR |
556+ | 0.13 EUR |
589+ | 0.12 EUR |
MMBT2369ALT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
300+ | 0.24 EUR |
MC74HC20ADG |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: tube
Operating temperature: -55...125°C
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: tube
Operating temperature: -55...125°C
Technology: CMOS
Produkt ist nicht verfügbar
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MC74HC20ADR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS
Produkt ist nicht verfügbar
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MC74HC20ADTR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS
Produkt ist nicht verfügbar
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MBT3904DW1T3G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 9750 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
658+ | 0.11 EUR |
1107+ | 0.065 EUR |
1330+ | 0.054 EUR |
1516+ | 0.047 EUR |
2689+ | 0.027 EUR |
2841+ | 0.025 EUR |
GBPC1202 |
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Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 12A; Ifsm: 300A
Type of bridge rectifier: single-phase
Version: square
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 12A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 200V
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 12A; Ifsm: 300A
Type of bridge rectifier: single-phase
Version: square
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 12A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 200V
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Produkt ist nicht verfügbar
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1N4148-T26A |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ammo Pack; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Kind of package: Ammo Pack
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ammo Pack; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Kind of package: Ammo Pack
auf Bestellung 34305 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
585+ | 0.12 EUR |
893+ | 0.08 EUR |
2703+ | 0.026 EUR |
4133+ | 0.017 EUR |
4762+ | 0.015 EUR |
7043+ | 0.01 EUR |
7463+ | 0.0096 EUR |
1N3595TR |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 200mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 3uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 8pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 3µA
Power dissipation: 0.5W
Reverse recovery time: 3µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 200mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 3uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 8pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 3µA
Power dissipation: 0.5W
Reverse recovery time: 3µs
auf Bestellung 4961 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
782+ | 0.092 EUR |
1161+ | 0.062 EUR |
1780+ | 0.04 EUR |
1880+ | 0.038 EUR |
ES1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMA
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Kind of package: reel; tape
Max. forward impulse current: 30A
Capacitance: 10pF
Power dissipation: 1.47W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMA
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Kind of package: reel; tape
Max. forward impulse current: 30A
Capacitance: 10pF
Power dissipation: 1.47W
Produkt ist nicht verfügbar
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MC74VHCT245ADWG |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; SO20WB
Type of integrated circuit: digital
Kind of integrated circuit: bus transceiver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20WB
Manufacturer series: VHCT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; SO20WB
Type of integrated circuit: digital
Kind of integrated circuit: bus transceiver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20WB
Manufacturer series: VHCT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: reel; tape
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
33+ | 2.17 EUR |
74VHCT245AMTCX |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Quiescent current: 40µA
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Quiescent current: 40µA
Kind of output: 3-state
Produkt ist nicht verfügbar
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MUN5211T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Current gain: 60
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Current gain: 60
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 544 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
544+ | 0.13 EUR |
SS34 |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape; 2.27W
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.5V
Case: SMC
Power dissipation: 2.27W
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape; 2.27W
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.5V
Case: SMC
Power dissipation: 2.27W
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
auf Bestellung 3333 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
99+ | 0.73 EUR |
128+ | 0.56 EUR |
206+ | 0.35 EUR |
218+ | 0.33 EUR |
250+ | 0.32 EUR |
MBR1100G |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 0.79V; bulk
Case: DO41
Mounting: THT
Max. off-state voltage: 100V
Max. load current: 2A
Max. forward voltage: 0.79V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: bulk
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 0.79V; bulk
Case: DO41
Mounting: THT
Max. off-state voltage: 100V
Max. load current: 2A
Max. forward voltage: 0.79V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: bulk
Type of diode: Schottky rectifying
auf Bestellung 706 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
190+ | 0.38 EUR |
341+ | 0.21 EUR |
360+ | 0.2 EUR |
MBR1100RLG |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 0.69V
Case: DO41
Mounting: THT
Max. off-state voltage: 100V
Max. forward voltage: 0.69V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 0.69V
Case: DO41
Mounting: THT
Max. off-state voltage: 100V
Max. forward voltage: 0.69V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: Schottky rectifying
auf Bestellung 4984 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
125+ | 0.57 EUR |
181+ | 0.4 EUR |
283+ | 0.25 EUR |
300+ | 0.24 EUR |
1000+ | 0.23 EUR |
74VHC374MTC |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Trigger: positive-edge-triggered
Kind of output: 3-state
Technology: CMOS
Manufacturer series: VHC
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Trigger: positive-edge-triggered
Kind of output: 3-state
Technology: CMOS
Manufacturer series: VHC
Produkt ist nicht verfügbar
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74VHC374MTCX |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state
Technology: CMOS
Manufacturer series: VHC
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state
Technology: CMOS
Manufacturer series: VHC
Produkt ist nicht verfügbar
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74VHC374MX |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; SO20-W; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state
Technology: CMOS
Manufacturer series: VHC
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; SO20-W; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state
Technology: CMOS
Manufacturer series: VHC
Produkt ist nicht verfügbar
Im Einkaufswagen
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