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MC74VHC139DTR2 MC74VHC139DTR2 onsemi MC74VHC139-D.pdf Description: IC DECODER/DEMUX 1X2:4 16-TSSOP
Supplier Device Package: 16-TSSOP
Voltage Supply Source: Single Supply
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 2
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Decoder/Demultiplexer
Circuit: 1 x 2:4
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
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MC74VHC139D MC74VHC139D onsemi ONSMS12074-1.pdf?t.download=true&u=5oefqw Description: DECODER/DRIVER, AHC/VHC SERIES
Packaging: Bulk
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MC74VHC139DT MC74VHC139DT onsemi ONSMS12074-1.pdf?t.download=true&u=5oefqw Description: IC DECODER/DEMUX 1X2:4 16-TSSOP
Supplier Device Package: 16-TSSOP
Voltage Supply Source: Single Supply
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 2
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Decoder/Demultiplexer
Circuit: 1 x 2:4
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
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NVMFD5C650NLWFT1G NVMFD5C650NLWFT1G onsemi nvmfd5c650nl-d.pdf Description: MOSFET 2N-CH 60V 21A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 98µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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NVMFD5C650NLWFT1G NVMFD5C650NLWFT1G onsemi nvmfd5c650nl-d.pdf Description: MOSFET 2N-CH 60V 21A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 98µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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2SC5966-CA onsemi Description: BIP NPN 20A 800V
Packaging: Bulk
Part Status: Active
auf Bestellung 5992 Stücke:
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NTLJS7D2P02P8ZTAG NTLJS7D2P02P8ZTAG onsemi ntljs7d2p02p8z-d.pdf Description: MOSFET P-CH 20V 7.9A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
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NTLJS7D2P02P8ZTAG NTLJS7D2P02P8ZTAG onsemi ntljs7d2p02p8z-d.pdf Description: MOSFET P-CH 20V 7.9A 6PQFN
Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V
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NTLJS5D0N03CTAG NTLJS5D0N03CTAG onsemi ntljs5d0n03c-d.pdf Description: MOSFET N-CH 30V 11.2A 6PQFN
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
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NTLJS5D0N03CTAG NTLJS5D0N03CTAG onsemi ntljs5d0n03c-d.pdf Description: MOSFET N-CH 30V 11.2A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
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500+0.62 EUR
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NTLJS3D0N02P8ZTAG NTLJS3D0N02P8ZTAG onsemi ntljs3d0n02p8z-d.pdf Description: MOSFET N-CH 20V 12.1A 6PQFN
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V
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3000+0.53 EUR
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NTLJS3D0N02P8ZTAG NTLJS3D0N02P8ZTAG onsemi ntljs3d0n02p8z-d.pdf Description: MOSFET N-CH 20V 12.1A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 7088 Stücke:
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16+1.11 EUR
100+0.84 EUR
500+0.69 EUR
1000+0.6 EUR
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NTLJS17D0P03P8ZTAG NTLJS17D0P03P8ZTAG onsemi ntljs17d0p03p8z-d.pdf Description: MOSFET P-CH 30V 7A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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NTLJS17D0P03P8ZTAG NTLJS17D0P03P8ZTAG onsemi ntljs17d0p03p8z-d.pdf Description: MOSFET P-CH 30V 7A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 5086 Stücke:
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18+1.02 EUR
100+0.66 EUR
500+0.51 EUR
1000+0.46 EUR
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NVTFWS014P04M8LTAG NVTFWS014P04M8LTAG onsemi nvtfs014p04m8l-d.pdf Description: MOSFET P-CH 40V 11.3A/49A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Qualification: AEC-Q101
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NVTFWS014P04M8LTAG NVTFWS014P04M8LTAG onsemi nvtfs014p04m8l-d.pdf Description: MOSFET P-CH 40V 11.3A/49A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 547 Stücke:
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14+1.27 EUR
100+0.96 EUR
500+0.76 EUR
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NVTFWS9D6P04M8LTAG NVTFWS9D6P04M8LTAG onsemi nvtfs9d6p04m8l-d.pdf Description: MOSFET P-CH 40V 13A/64A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 580µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2312 pF @ 20 V
Qualification: AEC-Q101
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7500+0.69 EUR
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NVTFWS9D6P04M8LTAG NVTFWS9D6P04M8LTAG onsemi nvtfs9d6p04m8l-d.pdf Description: MOSFET P-CH 40V 13A/64A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 580µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2312 pF @ 20 V
Qualification: AEC-Q101
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100+1.13 EUR
500+0.92 EUR
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NVMFS5C628NWFT1G NVMFS5C628NWFT1G onsemi nvmfs5c628n-d.pdf Description: MOSFET N-CH 60V 28A/150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V
Qualification: AEC-Q101
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NVMFS5C628NWFT1G NVMFS5C628NWFT1G onsemi nvmfs5c628n-d.pdf Description: MOSFET N-CH 60V 28A/150A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 670 Stücke:
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10+3.65 EUR
100+2.6 EUR
500+2.19 EUR
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NXV04V120DB1 NXV04V120DB1 onsemi nxv04v120db1-d.pdf Description: 3-PHASE INVERTER AUTOMOTI
Packaging: Tube
Package / Case: 19-PowerDIP Module (1.480", 37.60mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Grade: Automotive
Current: 160 A
Voltage: 40 V
auf Bestellung 84 Stücke:
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NC7S04M5-ON NC7S04M5-ON onsemi FAIRS22566-1.pdf?t.download=true&u=5oefqw Description: INVERTER, HC/UH SERIES, 1 FUNC,
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LA6358NSLL-E onsemi MAXMS04747-1.pdf?t.download=true&u=5oefqw Description: IC OPAMP GP 2 CIRCUIT 9SIP
Voltage - Supply Span (Max): 30 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 9-SIP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Operating Temperature: -30°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 9-SIP
Packaging: Bulk
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LA6358NLL-E LA6358NLL-E onsemi ONSMS36560-1.pdf?t.download=true&u=5oefqw Description: IC OPAMP GP 2 CIRCUIT 8DIP
Voltage - Supply Span (Max): 30 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-DIP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Operating Temperature: -30°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
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LA6358NL-E LA6358NL-E onsemi ONSMS36560-1.pdf?t.download=true&u=5oefqw Description: IC OPAMP GP 2 CIRCUIT 8DIP
Supplier Device Package: 8-DIP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Operating Temperature: -30°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Voltage - Supply Span (Max): 30 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Part Status: Active
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LA6358N-E LA6358N-E onsemi ONSMS36560-1.pdf?t.download=true&u=5oefqw Description: IC OPAMP GP 2 CIRCUIT 8DIP
Operating Temperature: -30°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Voltage - Supply Span (Max): 30 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-DIP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
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SNRVUD620CTT4G SNRVUD620CTT4G onsemi murd620ct-d.pdf Description: DIODE ARRAY GP 200V 3A DPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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SNRVUD620CTT4G SNRVUD620CTT4G onsemi murd620ct-d.pdf Description: DIODE ARRAY GP 200V 3A DPAK
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DPAK
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NRVUB1620CTT4G NRVUB1620CTT4G onsemi murb1620ct-d.pdf Description: DIODE GEN PURP 200V 8A D2PAK-3
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NRVUB1620CTT4G NRVUB1620CTT4G onsemi murb1620ct-d.pdf Description: DIODE GEN PURP 200V 8A D2PAK-3
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NRVTS8100PFST3G NRVTS8100PFST3G onsemi NRTS8100PFS-D.PDF Description: DIODE SCHOTTKY 100V 8A TO2773
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: TO-277-3
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 660pF @ 1V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
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XCY99008BR2 onsemi Description: PWM CURRENT-MODE CONTROLLER
Packaging: Bulk
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CS51021ED16 CS51021ED16 onsemi CHRYS00651-1.pdf?t.download=true&u=5oefqw Description: CURRENT MODE PWM CONTROLLER 1A
Part Status: Active
Packaging: Bulk
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LV52206XA-TSD onsemi Description: SEU - MOBILE DRIVER, 33048080
Packaging: Bulk
Part Status: Active
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2SC2344E onsemi Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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LC75844MHS-MPB-E LC75844MHS-MPB-E onsemi LC75844M_Rev2017.pdf Description: IC DRVR 88 SEGMENT 36MFPSDJ
Packaging: Tube
Package / Case: 36-SOP (0.311", 7.90mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 88 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 6V
Supplier Device Package: 36-MFPSDJ
Part Status: Obsolete
Current - Supply: 230 µA
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MJE18002 MJE18002 onsemi mje18002-d.pdf Description: TRANS NPN 450V 2A TO-220
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 13MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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MJE18002G MJE18002G onsemi mje18002-d.pdf Description: TRANS NPN 450V 2A TO-220
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 13MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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SZMMBZ5226BLT1G SZMMBZ5226BLT1G onsemi mmbz5221blt1-d.pdf Description: DIODE ZENER 3.3V 225MW SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 225 mW
Supplier Device Package: SOT-23-3 (TO-236)
Impedance (Max) (Zzt): 28 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
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MC10H115FNR2G MC10H115FNR2G onsemi design-resources?notFound=MC10H115-D.PDF Description: IC RECEIVER 0/4 20PLCC
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MC10H115FNR2 MC10H115FNR2 onsemi MC10H115-D.PDF Description: IC RECEIVER 0/4 20PLCC
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SB0030-04A-AT1 onsemi Description: DIODE SCHOTTKY 40V 30MA
Part Status: Active
Packaging: Bulk
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SB0030-04A onsemi SNYOS01889-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, SCHOTTKY
Part Status: Active
Packaging: Bulk
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H11G46 onsemi Description: PHOTO DARLINGTON OPTOISOLATOR
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
Part Status: Obsolete
Voltage - Output (Max): 55V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Min): 350% @ 500µA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 60mA
Input Type: DC
Mounting Type: Through Hole
Output Type: Darlington with Base
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NL17SZ125DFT2G9D NL17SZ125DFT2G9D onsemi Description: LOG NON-INVRT 3-STATE BUF
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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NL17SZ125DFT2 NL17SZ125DFT2 onsemi ONSMS34917-1.pdf?t.download=true&u=5oefqw Description: IC BUFFER NON-INVERT 5.5V SC88A
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CS3524AGN16 CS3524AGN16 onsemi ONSMS12510-1.pdf?t.download=true&u=5oefqw Description: SWITCHING CONTROLLER
Packaging: Bulk
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CS3524AGDWR16 CS3524AGDWR16 onsemi ONSMS12510-1.pdf?t.download=true&u=5oefqw Description: SWITCHING CONTROLLER
Packaging: Bulk
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CS3524AGDW16 CS3524AGDW16 onsemi ONSMS12510-1.pdf?t.download=true&u=5oefqw Description: SWITCHING CONTROLLER
Packaging: Bulk
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NCP1218AD65R2G NCP1218AD65R2G onsemi NCP1218.pdf Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Part Status: Obsolete
Voltage - Start Up: 12.7 V
Fault Protection: Over Load, Over Temperature, Over Voltage
Supplier Device Package: 7-SOIC
Voltage - Supply (Vcc/Vdd): 9.9V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 65kHz
Duty Cycle: 80%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Packaging: Bulk
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NCP1217AD65R2 NCP1217AD65R2 onsemi ncp1217-d.pdf Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Duty Cycle: 46.5%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.6V ~ 16V
Supplier Device Package: 8-SOIC
Fault Protection: Over Load, Over Temperature, Short Circuit
Voltage - Start Up: 12.8 V
Part Status: Obsolete
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NCP1249AD65R2G NCP1249AD65R2G onsemi NCP1249.pdf Description: IC OFFLINE SWITCH FLYBACK 9SOIC
Packaging: Bulk
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Supplier Device Package: 9-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 18 V
Part Status: Obsolete
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MPS2369RLRA MPS2369RLRA onsemi mps2369-d.pdf Description: TRANS NPN 15V 0.2A TO92
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Current - Collector Cutoff (Max): 400nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Packaging: Bulk
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NLV14099BDWR2G NLV14099BDWR2G onsemi mc14099b-d.pdf Description: IC LATCH 8BIT 16SOIC
Delay Time - Propagation: 50ns
Current - Output High, Low: 8.8mA, 8.8mA
Independent Circuits: 1
Voltage - Supply: 3V ~ 18V
Operating Temperature: -55°C ~ 125°C
Logic Type: D-Type, Addressable
Circuit: 4:4
Mounting Type: Surface Mount
Output Type: Standard
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: 16-SOIC
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NLV14067BDWR2G onsemi mc14067b-d.pdf Description: IC MUX 16:1 280OHM 24SOIC
Qualification: AEC-Q100
Number of Circuits: 1
Grade: Automotive
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 100pF
Channel-to-Channel Matching (ΔRon): 10Ohm
Multiplexer/Demultiplexer Circuit: 16:1
Voltage - Supply, Single (V+): 3V ~ 18V
Supplier Device Package: 24-SOIC
On-State Resistance (Max): 280Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
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LB11970RV-W-AH onsemi Description: SINGLE PHASE MOTOR DRIVER
Produkt ist nicht verfügbar
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LE25S20XATAG onsemi le25s20xa-d.pdf Description: IC FLASH 2MBIT SPI 40MHZ 8WLCSP
Produkt ist nicht verfügbar
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SSV1MUN2211T1 onsemi Description: SSV1MUN2211T1
Produkt ist nicht verfügbar
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MUN2211T3 MUN2211T3 onsemi MUN2211T1%20Series.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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mun2211jt1 onsemi Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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MC74VHC139DTR2 MC74VHC139-D.pdf
MC74VHC139DTR2
Hersteller: onsemi
Description: IC DECODER/DEMUX 1X2:4 16-TSSOP
Supplier Device Package: 16-TSSOP
Voltage Supply Source: Single Supply
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 2
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Decoder/Demultiplexer
Circuit: 1 x 2:4
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
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MC74VHC139D ONSMS12074-1.pdf?t.download=true&u=5oefqw
MC74VHC139D
Hersteller: onsemi
Description: DECODER/DRIVER, AHC/VHC SERIES
Packaging: Bulk
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1817+0.26 EUR
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MC74VHC139DT ONSMS12074-1.pdf?t.download=true&u=5oefqw
MC74VHC139DT
Hersteller: onsemi
Description: IC DECODER/DEMUX 1X2:4 16-TSSOP
Supplier Device Package: 16-TSSOP
Voltage Supply Source: Single Supply
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 2
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Decoder/Demultiplexer
Circuit: 1 x 2:4
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
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NVMFD5C650NLWFT1G nvmfd5c650nl-d.pdf
NVMFD5C650NLWFT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 21A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 98µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1500+3.4 EUR
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NVMFD5C650NLWFT1G nvmfd5c650nl-d.pdf
NVMFD5C650NLWFT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 21A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 98µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1929 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+8.84 EUR
10+5.9 EUR
100+4.24 EUR
500+4.16 EUR
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2SC5966-CA
Hersteller: onsemi
Description: BIP NPN 20A 800V
Packaging: Bulk
Part Status: Active
auf Bestellung 5992 Stücke:
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AnzahlPreis
226+2.16 EUR
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NTLJS7D2P02P8ZTAG ntljs7d2p02p8z-d.pdf
NTLJS7D2P02P8ZTAG
Hersteller: onsemi
Description: MOSFET P-CH 20V 7.9A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.53 EUR
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NTLJS7D2P02P8ZTAG ntljs7d2p02p8z-d.pdf
NTLJS7D2P02P8ZTAG
Hersteller: onsemi
Description: MOSFET P-CH 20V 7.9A 6PQFN
Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V
auf Bestellung 36114 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.31 EUR
13+1.46 EUR
100+0.97 EUR
500+0.76 EUR
1000+0.69 EUR
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NTLJS5D0N03CTAG ntljs5d0n03c-d.pdf
NTLJS5D0N03CTAG
Hersteller: onsemi
Description: MOSFET N-CH 30V 11.2A 6PQFN
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.5 EUR
9000+0.49 EUR
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NTLJS5D0N03CTAG ntljs5d0n03c-d.pdf
NTLJS5D0N03CTAG
Hersteller: onsemi
Description: MOSFET N-CH 30V 11.2A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 35828 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
12+1.48 EUR
16+1.12 EUR
100+0.75 EUR
500+0.62 EUR
1000+0.58 EUR
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NTLJS3D0N02P8ZTAG ntljs3d0n02p8z-d.pdf
NTLJS3D0N02P8ZTAG
Hersteller: onsemi
Description: MOSFET N-CH 20V 12.1A 6PQFN
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.53 EUR
6000+0.5 EUR
Mindestbestellmenge: 3000 Stücke
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NTLJS3D0N02P8ZTAG ntljs3d0n02p8z-d.pdf
NTLJS3D0N02P8ZTAG
Hersteller: onsemi
Description: MOSFET N-CH 20V 12.1A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 7088 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
11+1.64 EUR
16+1.11 EUR
100+0.84 EUR
500+0.69 EUR
1000+0.6 EUR
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NTLJS17D0P03P8ZTAG ntljs17d0p03p8z-d.pdf
NTLJS17D0P03P8ZTAG
Hersteller: onsemi
Description: MOSFET P-CH 30V 7A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.4 EUR
Mindestbestellmenge: 3000 Stücke
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NTLJS17D0P03P8ZTAG ntljs17d0p03p8z-d.pdf
NTLJS17D0P03P8ZTAG
Hersteller: onsemi
Description: MOSFET P-CH 30V 7A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 5086 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
11+1.62 EUR
18+1.02 EUR
100+0.66 EUR
500+0.51 EUR
1000+0.46 EUR
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NVTFWS014P04M8LTAG nvtfs014p04m8l-d.pdf
NVTFWS014P04M8LTAG
Hersteller: onsemi
Description: MOSFET P-CH 40V 11.3A/49A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVTFWS014P04M8LTAG nvtfs014p04m8l-d.pdf
NVTFWS014P04M8LTAG
Hersteller: onsemi
Description: MOSFET P-CH 40V 11.3A/49A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 547 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.94 EUR
14+1.27 EUR
100+0.96 EUR
500+0.76 EUR
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NVTFWS9D6P04M8LTAG nvtfs9d6p04m8l-d.pdf
NVTFWS9D6P04M8LTAG
Hersteller: onsemi
Description: MOSFET P-CH 40V 13A/64A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 580µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2312 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1500+0.75 EUR
3000+0.74 EUR
4500+0.72 EUR
7500+0.69 EUR
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NVTFWS9D6P04M8LTAG nvtfs9d6p04m8l-d.pdf
NVTFWS9D6P04M8LTAG
Hersteller: onsemi
Description: MOSFET P-CH 40V 13A/64A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 580µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2312 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 9090 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.48 EUR
11+1.65 EUR
100+1.13 EUR
500+0.92 EUR
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NVMFS5C628NWFT1G nvmfs5c628n-d.pdf
NVMFS5C628NWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 28A/150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS5C628NWFT1G nvmfs5c628n-d.pdf
NVMFS5C628NWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 28A/150A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 670 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.44 EUR
10+3.65 EUR
100+2.6 EUR
500+2.19 EUR
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NXV04V120DB1 nxv04v120db1-d.pdf
NXV04V120DB1
Hersteller: onsemi
Description: 3-PHASE INVERTER AUTOMOTI
Packaging: Tube
Package / Case: 19-PowerDIP Module (1.480", 37.60mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Grade: Automotive
Current: 160 A
Voltage: 40 V
auf Bestellung 84 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+47.24 EUR
44+29.46 EUR
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NC7S04M5-ON FAIRS22566-1.pdf?t.download=true&u=5oefqw
NC7S04M5-ON
Hersteller: onsemi
Description: INVERTER, HC/UH SERIES, 1 FUNC,
Produkt ist nicht verfügbar
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LA6358NSLL-E MAXMS04747-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 9SIP
Voltage - Supply Span (Max): 30 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 9-SIP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Operating Temperature: -30°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 9-SIP
Packaging: Bulk
auf Bestellung 18024 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2664+0.19 EUR
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LA6358NLL-E ONSMS36560-1.pdf?t.download=true&u=5oefqw
LA6358NLL-E
Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Voltage - Supply Span (Max): 30 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-DIP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Operating Temperature: -30°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
auf Bestellung 43543 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2049+0.25 EUR
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LA6358NL-E ONSMS36560-1.pdf?t.download=true&u=5oefqw
LA6358NL-E
Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Supplier Device Package: 8-DIP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Operating Temperature: -30°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Voltage - Supply Span (Max): 30 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Part Status: Active
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2049+0.25 EUR
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LA6358N-E ONSMS36560-1.pdf?t.download=true&u=5oefqw
LA6358N-E
Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Operating Temperature: -30°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Voltage - Supply Span (Max): 30 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-DIP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
auf Bestellung 576 Stücke:
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346+1.47 EUR
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SNRVUD620CTT4G murd620ct-d.pdf
SNRVUD620CTT4G
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 3A DPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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AnzahlPreis
2500+0.38 EUR
5000+0.35 EUR
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SNRVUD620CTT4G murd620ct-d.pdf
SNRVUD620CTT4G
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 3A DPAK
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DPAK
auf Bestellung 5879 Stücke:
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AnzahlPreis
15+1.21 EUR
21+0.88 EUR
100+0.7 EUR
500+0.53 EUR
1000+0.45 EUR
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NRVUB1620CTT4G murb1620ct-d.pdf
NRVUB1620CTT4G
Hersteller: onsemi
Description: DIODE GEN PURP 200V 8A D2PAK-3
Produkt ist nicht verfügbar
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NRVUB1620CTT4G murb1620ct-d.pdf
NRVUB1620CTT4G
Hersteller: onsemi
Description: DIODE GEN PURP 200V 8A D2PAK-3
auf Bestellung 226 Stücke:
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AnzahlPreis
5+4.33 EUR
10+3.9 EUR
100+3.14 EUR
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NRVTS8100PFST3G NRTS8100PFS-D.PDF
NRVTS8100PFST3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 8A TO2773
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: TO-277-3
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 660pF @ 1V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
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AnzahlPreis
5000+0.46 EUR
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XCY99008BR2
Hersteller: onsemi
Description: PWM CURRENT-MODE CONTROLLER
Packaging: Bulk
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1025+0.48 EUR
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CS51021ED16 CHRYS00651-1.pdf?t.download=true&u=5oefqw
CS51021ED16
Hersteller: onsemi
Description: CURRENT MODE PWM CONTROLLER 1A
Part Status: Active
Packaging: Bulk
auf Bestellung 1728 Stücke:
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AnzahlPreis
386+1.28 EUR
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LV52206XA-TSD
Hersteller: onsemi
Description: SEU - MOBILE DRIVER, 33048080
Packaging: Bulk
Part Status: Active
auf Bestellung 95000 Stücke:
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AnzahlPreis
466+0.97 EUR
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2SC2344E
Hersteller: onsemi
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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LC75844MHS-MPB-E LC75844M_Rev2017.pdf
LC75844MHS-MPB-E
Hersteller: onsemi
Description: IC DRVR 88 SEGMENT 36MFPSDJ
Packaging: Tube
Package / Case: 36-SOP (0.311", 7.90mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 88 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 6V
Supplier Device Package: 36-MFPSDJ
Part Status: Obsolete
Current - Supply: 230 µA
auf Bestellung 1523 Stücke:
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AnzahlPreis
124+3.6 EUR
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MJE18002 mje18002-d.pdf
MJE18002
Hersteller: onsemi
Description: TRANS NPN 450V 2A TO-220
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 13MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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AnzahlPreis
841+0.54 EUR
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MJE18002G mje18002-d.pdf
MJE18002G
Hersteller: onsemi
Description: TRANS NPN 450V 2A TO-220
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 13MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 65841 Stücke:
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AnzahlPreis
420+1.07 EUR
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SZMMBZ5226BLT1G mmbz5221blt1-d.pdf
SZMMBZ5226BLT1G
Hersteller: onsemi
Description: DIODE ZENER 3.3V 225MW SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 225 mW
Supplier Device Package: SOT-23-3 (TO-236)
Impedance (Max) (Zzt): 28 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 16320 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
56+0.32 EUR
81+0.22 EUR
150+0.12 EUR
500+0.092 EUR
1000+0.064 EUR
Mindestbestellmenge: 56 Stücke
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MC10H115FNR2G design-resources?notFound=MC10H115-D.PDF
MC10H115FNR2G
Hersteller: onsemi
Description: IC RECEIVER 0/4 20PLCC
auf Bestellung 5737 Stücke:
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AnzahlPreis
128+4.05 EUR
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MC10H115FNR2 MC10H115-D.PDF
MC10H115FNR2
Hersteller: onsemi
Description: IC RECEIVER 0/4 20PLCC
auf Bestellung 4217 Stücke:
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AnzahlPreis
128+4.05 EUR
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SB0030-04A-AT1
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 30MA
Part Status: Active
Packaging: Bulk
auf Bestellung 705000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6662+0.082 EUR
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SB0030-04A SNYOS01889-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: RECTIFIER DIODE, SCHOTTKY
Part Status: Active
Packaging: Bulk
auf Bestellung 108292 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5323+0.098 EUR
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H11G46
Hersteller: onsemi
Description: PHOTO DARLINGTON OPTOISOLATOR
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
Part Status: Obsolete
Voltage - Output (Max): 55V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Min): 350% @ 500µA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 60mA
Input Type: DC
Mounting Type: Through Hole
Output Type: Darlington with Base
Produkt ist nicht verfügbar
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NL17SZ125DFT2G9D
NL17SZ125DFT2G9D
Hersteller: onsemi
Description: LOG NON-INVRT 3-STATE BUF
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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NL17SZ125DFT2 ONSMS34917-1.pdf?t.download=true&u=5oefqw
NL17SZ125DFT2
Hersteller: onsemi
Description: IC BUFFER NON-INVERT 5.5V SC88A
auf Bestellung 73632 Stücke:
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CS3524AGN16 ONSMS12510-1.pdf?t.download=true&u=5oefqw
CS3524AGN16
Hersteller: onsemi
Description: SWITCHING CONTROLLER
Packaging: Bulk
auf Bestellung 27748 Stücke:
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AnzahlPreis
478+0.94 EUR
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CS3524AGDWR16 ONSMS12510-1.pdf?t.download=true&u=5oefqw
CS3524AGDWR16
Hersteller: onsemi
Description: SWITCHING CONTROLLER
Packaging: Bulk
auf Bestellung 28338 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
319+1.4 EUR
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CS3524AGDW16 ONSMS12510-1.pdf?t.download=true&u=5oefqw
CS3524AGDW16
Hersteller: onsemi
Description: SWITCHING CONTROLLER
Packaging: Bulk
auf Bestellung 235 Stücke:
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AnzahlPreis
150+2.97 EUR
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NCP1218AD65R2G NCP1218.pdf
NCP1218AD65R2G
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Part Status: Obsolete
Voltage - Start Up: 12.7 V
Fault Protection: Over Load, Over Temperature, Over Voltage
Supplier Device Package: 7-SOIC
Voltage - Supply (Vcc/Vdd): 9.9V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 65kHz
Duty Cycle: 80%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Packaging: Bulk
auf Bestellung 28137 Stücke:
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AnzahlPreis
519+0.88 EUR
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NCP1217AD65R2 ncp1217-d.pdf
NCP1217AD65R2
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Duty Cycle: 46.5%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.6V ~ 16V
Supplier Device Package: 8-SOIC
Fault Protection: Over Load, Over Temperature, Short Circuit
Voltage - Start Up: 12.8 V
Part Status: Obsolete
auf Bestellung 6776 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
761+0.65 EUR
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NCP1249AD65R2G NCP1249.pdf
NCP1249AD65R2G
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 9SOIC
Packaging: Bulk
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Supplier Device Package: 9-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 18 V
Part Status: Obsolete
auf Bestellung 16682 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
701+0.72 EUR
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MPS2369RLRA mps2369-d.pdf
MPS2369RLRA
Hersteller: onsemi
Description: TRANS NPN 15V 0.2A TO92
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Current - Collector Cutoff (Max): 400nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Packaging: Bulk
auf Bestellung 20588 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6662+0.079 EUR
Mindestbestellmenge: 6662 Stücke
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NLV14099BDWR2G mc14099b-d.pdf
NLV14099BDWR2G
Hersteller: onsemi
Description: IC LATCH 8BIT 16SOIC
Delay Time - Propagation: 50ns
Current - Output High, Low: 8.8mA, 8.8mA
Independent Circuits: 1
Voltage - Supply: 3V ~ 18V
Operating Temperature: -55°C ~ 125°C
Logic Type: D-Type, Addressable
Circuit: 4:4
Mounting Type: Surface Mount
Output Type: Standard
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: 16-SOIC
auf Bestellung 26241 Stücke:
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AnzahlPreis
503+0.98 EUR
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NLV14067BDWR2G mc14067b-d.pdf
Hersteller: onsemi
Description: IC MUX 16:1 280OHM 24SOIC
Qualification: AEC-Q100
Number of Circuits: 1
Grade: Automotive
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 100pF
Channel-to-Channel Matching (ΔRon): 10Ohm
Multiplexer/Demultiplexer Circuit: 16:1
Voltage - Supply, Single (V+): 3V ~ 18V
Supplier Device Package: 24-SOIC
On-State Resistance (Max): 280Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
auf Bestellung 1908 Stücke:
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AnzahlPreis
263+1.73 EUR
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LB11970RV-W-AH
Hersteller: onsemi
Description: SINGLE PHASE MOTOR DRIVER
Produkt ist nicht verfügbar
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LE25S20XATAG le25s20xa-d.pdf
Hersteller: onsemi
Description: IC FLASH 2MBIT SPI 40MHZ 8WLCSP
Produkt ist nicht verfügbar
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SSV1MUN2211T1
Hersteller: onsemi
Description: SSV1MUN2211T1
Produkt ist nicht verfügbar
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MUN2211T3 MUN2211T1%20Series.pdf
MUN2211T3
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7869+0.06 EUR
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mun2211jt1
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7869+0.06 EUR
Mindestbestellmenge: 7869 Stücke
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