| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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| NVBG015N065SC1 | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 103A; Idm: 442A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 103A Pulsed drain current: 442A Power dissipation: 250W Case: D2PAK-7 Gate-source voltage: -5...18V On-state resistance: 16mΩ Mounting: SMD Gate charge: 283nC Kind of package: reel; tape Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
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| NVHL015N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 115A; Idm: 484A; 321W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 115A Pulsed drain current: 484A Power dissipation: 321W Case: TO247-3 Gate-source voltage: -5...18V On-state resistance: 16mΩ Mounting: THT Gate charge: 283nC Kind of package: tube Kind of channel: enhancement Technology: SiC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NVH4L015N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 483A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 100A Pulsed drain current: 483A Power dissipation: 250W Case: TO247-4 Gate-source voltage: -5...18V On-state resistance: 16Ω Mounting: THT Gate charge: 283C Kind of package: tube Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NRVBB30H60CTT4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 15A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 15A Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.78V Max. load current: 30A Max. forward impulse current: 260A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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FGD1240G2 | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; DPAK Type of transistor: IGBT Case: DPAK Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FGD3050G2 | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 500V; 27A; 150W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 500V Collector current: 27A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Version: ESD Features of semiconductor devices: logic level Application: ignition systems |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FGD3440G2-F085 | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 25A; 166W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25A Power dissipation: 166W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Version: ESD Features of semiconductor devices: logic level Application: ignition systems |
Produkt ist nicht verfügbar |
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ISL9V2040D3ST | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 10A; 130W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 10A Power dissipation: 130W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Version: ESD Features of semiconductor devices: logic level Application: ignition systems |
Produkt ist nicht verfügbar |
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SS15 | ONSEMI |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 40A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SS15FA | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 30A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NCP380HMUAJAATBG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; uDFN6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.5...2.1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: uDFN6 On-state resistance: 0.11Ω Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: high Control voltage: 0...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP380HSN10AAT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; TSOP5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: TSOP5 On-state resistance: 135mΩ Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: high Control voltage: 0...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP380LMUAJAATBG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; uDFN6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.5...2.1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: uDFN6 On-state resistance: 0.11Ω Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: low Control voltage: 0...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP380HSNAJAAT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; TSOP6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.5...2.1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: TSOP6 On-state resistance: 70mΩ Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP380LSN05AAT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; TSOP5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: TSOP5 On-state resistance: 135mΩ Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: low Control voltage: 0...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP380HMU05AATBG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; uDFN6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: uDFN6 On-state resistance: 0.11Ω Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: high Control voltage: 0...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP380LSNAJAAT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; TSOP6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.5...2.1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: TSOP6 On-state resistance: 135mΩ Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: low Control voltage: 0...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP380HMU10AATBG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; uDFN6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: uDFN6 On-state resistance: 0.11Ω Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: high Control voltage: 0...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP380HMU15AATBG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; uDFN6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: uDFN6 On-state resistance: 0.11Ω Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: high Control voltage: 0...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP380HMU20AATBG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; uDFN6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: uDFN6 On-state resistance: 0.11Ω Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: high Control voltage: 0...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP380HMU21AATBG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2.1A; Ch: 1; P-Channel; SMD; uDFN6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2.1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: uDFN6 On-state resistance: 0.11Ω Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: high Control voltage: 0...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP380LMU05AATBG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; uDFN6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: uDFN6 On-state resistance: 0.11Ω Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: low Control voltage: 0...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP380LSN10AAT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; TSOP5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: TSOP5 On-state resistance: 135mΩ Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: low Control voltage: 0...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| LM2904ADMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; Micro8 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: Micro8 Operating temperature: -40...105°C Input offset voltage: 10mV Kind of package: reel; tape Input offset current: 200nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| EGP20K | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 2A; Ifsm: 75A; DO15; reel,tape; 75ns Mounting: THT Max. forward impulse current: 75A Max. off-state voltage: 0.8kV Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Case: DO15 Type of diode: rectifying Reverse recovery time: 75ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NRVBS310FA | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 3A; reel,tape Max. forward impulse current: 80A Max. forward voltage: 0.85V Application: automotive industry Max. off-state voltage: 0.1kV Load current: 3A Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123F Type of diode: Schottky rectifying Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NRVBS3100T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape Max. forward impulse current: 130A Max. forward voltage: 0.9V Application: automotive industry Max. off-state voltage: 0.1kV Load current: 3A Kind of package: reel; tape Semiconductor structure: single diode Case: SMC Type of diode: Schottky rectifying Mounting: SMD |
Produkt ist nicht verfügbar |
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MMBZ6V2ALT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.2V; 2.76A; 24W; double,common anode; ESD; SOT23 Type of diode: TVS array Case: SOT23 Mounting: SMD Tolerance: ±5% Semiconductor structure: common anode; double Kind of package: reel; tape Number of channels: 2 Breakdown voltage: 6.2V Max. forward impulse current: 2.76A Peak pulse power dissipation: 24W Version: ESD Max. off-state voltage: 3V Leakage current: 0.5µA |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
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74VHC373MTC | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; 2÷5.5VDC; SMD; TSSOP20; VHC; -40÷85°C Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...5.5V DC Manufacturer series: VHC Operating temperature: -40...85°C Trigger: level-triggered Quiescent current: 40µA Kind of package: tube Case: TSSOP20 Family: VHC Kind of integrated circuit: D latch Number of channels: 8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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74VHC373MTCX | ONSEMI |
Category: Latches Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷5.5VDC; SMD; VHC Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...5.5V DC Manufacturer series: VHC Kind of output: 3-state Operating temperature: -40...85°C Technology: CMOS Kind of package: reel; tape Case: TSSOP20 Family: VHC Kind of integrated circuit: 3-state; D latch; octal Number of channels: 8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| 74VHC373MX | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; 2÷5.5VDC; SMD; SO20-W; VHC; -40÷85°C; VHC Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...5.5V DC Manufacturer series: VHC Operating temperature: -40...85°C Trigger: level-triggered Quiescent current: 40µA Kind of package: reel; tape Case: SO20-W Family: VHC Kind of integrated circuit: D latch Number of channels: 8 |
Produkt ist nicht verfügbar |
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MC74VHC373DTR2G | ONSEMI |
Category: Latches Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷5.5VDC; SMD; VHC Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...5.5V DC Manufacturer series: VHC Kind of output: 3-state Operating temperature: -40...85°C Technology: CMOS Kind of package: reel; tape Case: TSSOP20 Family: VHC Kind of integrated circuit: 3-state; D latch; octal Number of channels: 8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MC74VHC373DWR2G | ONSEMI |
Category: Latches Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷5.5VDC; SMD; VHC Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...5.5V DC Manufacturer series: VHC Kind of output: 3-state Operating temperature: -40...85°C Technology: CMOS Kind of package: reel; tape Case: SOIC20 Family: VHC Kind of integrated circuit: 3-state; D latch; octal Number of channels: 8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FAN53880UC002X | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; WLCSP25; SMD; reel,tape Mounting: SMD Type of integrated circuit: PMIC Kind of package: reel; tape Case: WLCSP25 Kind of integrated circuit: DC/DC converter |
Produkt ist nicht verfügbar |
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SZMMSZ5V1T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.1V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZxxTxG Application: automotive industry |
Produkt ist nicht verfügbar |
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FDP036N10A | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 214A; Idm: 856A; 333W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 214A Pulsed drain current: 856A Power dissipation: 333W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: THT Gate charge: 89nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 134 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C30LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 30V; SMD; SOT23; single diode; reel,tape; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 30V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84C |
auf Bestellung 523 Stücke: Lieferzeit 14-21 Tag (e) |
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SZBZX84C30ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 30V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 30V Mounting: SMD Tolerance: ±7% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84CxxET1G Application: automotive industry |
Produkt ist nicht verfügbar |
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SZBZX84C30LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 30V; SMD; SOT23; single diode; reel,tape; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 30V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84C Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NRVBB60H100CTT4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 30Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 0.1kV Load current: 30A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.98V Max. load current: 60A Max. forward impulse current: 350A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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MOC3063M | ONSEMI |
Category: Optotriacs Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Output voltage: 600V Kind of output: zero voltage crossing driver Case: DIP6 Trigger current: 5mA Mounting: THT Manufacturer series: MOC3063M |
auf Bestellung 785 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC256M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 20-150%@10mA Collector-emitter voltage: 30V Case: SO8 Max. off-state voltage: 6V |
Produkt ist nicht verfügbar |
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GBU8M | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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MMBT3904 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.35W Case: SOT23; TO236AB Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MC14532BDR2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: digital; priority encoder; SMD; SOIC16; Ch: 1; IN: 8; 3÷18V Operating temperature: -55...125°C Mounting: SMD Supply voltage: 3...18V Type of integrated circuit: digital Number of inputs: 8 Case: SOIC16 Number of outputs: 3 Kind of integrated circuit: priority encoder Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FDBL9401-F085T6 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 90.3W; H-PSOF8L Mounting: SMD Power dissipation: 90.3W Gate charge: 148nC Polarisation: unipolar Drain current: 240A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: H-PSOF8L On-state resistance: 670µΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FDBL9406-F085T6 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 68.2W; H-PSOF8L Mounting: SMD Power dissipation: 68.2W Gate charge: 75nC Polarisation: unipolar Drain current: 240A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: H-PSOF8L On-state resistance: 1.21mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FDBL0065N40 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 429W; H-PSOF8L Mounting: SMD Power dissipation: 429W Gate charge: 0.22µC Polarisation: unipolar Drain current: 300A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: H-PSOF8L On-state resistance: 0.65mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FDBL0090N40 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 357W; H-PSOF8L Mounting: SMD Power dissipation: 357W Gate charge: 144nC Polarisation: unipolar Drain current: 240A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: H-PSOF8L On-state resistance: 0.9mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MMBZ15VALT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; ESD; SOT23 Type of diode: TVS array Breakdown voltage: 15V Max. forward impulse current: 1.9A Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 12V Number of channels: 2 Tolerance: ±5% Kind of package: reel; tape Version: ESD Leakage current: 50nA |
auf Bestellung 8601 Stücke: Lieferzeit 14-21 Tag (e) |
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SZMMBZ15VALT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SOT23; Ch: 2 Type of diode: TVS array Breakdown voltage: 15V Max. forward impulse current: 1.9A Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 12V Number of channels: 2 Tolerance: ±5% Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MMBZ15VDLT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 15V; 1.9A; 40W; double,common cathode; ESD; SOT23 Type of diode: TVS array Breakdown voltage: 15V Max. forward impulse current: 1.9A Peak pulse power dissipation: 40W Semiconductor structure: common cathode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 12.8V Number of channels: 2 Tolerance: ±5% Kind of package: reel; tape Version: ESD Leakage current: 0.1µA |
auf Bestellung 1709 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBZ15VDLT3G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 15V; 1.9A; 40W; double,common cathode; ESD; SOT23 Type of diode: TVS array Breakdown voltage: 15V Max. forward impulse current: 1.9A Peak pulse power dissipation: 40W Semiconductor structure: common cathode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 12.8V Number of channels: 2 Tolerance: ±5% Kind of package: reel; tape Version: ESD Leakage current: 0.1µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SZMMBZ15VDLT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SOT23; Ch: 2 Type of diode: TVS array Breakdown voltage: 15V Max. forward impulse current: 1.9A Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 12V Number of channels: 2 Tolerance: ±5% Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BF720T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 50 Mounting: SMD Kind of package: reel; tape Frequency: 60MHz |
auf Bestellung 412 Stücke: Lieferzeit 14-21 Tag (e) |
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SBF720T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 50 Mounting: SMD Kind of package: reel; tape Frequency: 60MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FDB0190N807L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6 Mounting: SMD Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: D2PAK-6 On-state resistance: 4.3mΩ Pulsed drain current: 1.44kA Power dissipation: 250W Gate charge: 249nC Polarisation: unipolar Drain current: 190A Kind of channel: enhancement |
auf Bestellung 778 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTHL099N60S5 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 95A; 184W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 33A Power dissipation: 184W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 95A Gate charge: 48nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FCMT199N60 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 208W Case: Power88 Gate-source voltage: ±20V On-state resistance: 0.199Ω Mounting: SMD Kind of channel: enhancement Pulsed drain current: 60.6A Gate charge: 57nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FCMT299N60 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.9A Power dissipation: 125W Case: Power88 Gate-source voltage: ±20V On-state resistance: 0.299Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 36A Gate charge: 51nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NVBG015N065SC1 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 103A; Idm: 442A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 103A
Pulsed drain current: 442A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 283nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 103A; Idm: 442A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 103A
Pulsed drain current: 442A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 283nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVHL015N065SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 115A; Idm: 484A; 321W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 115A
Pulsed drain current: 484A
Power dissipation: 321W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 283nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 115A; Idm: 484A; 321W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 115A
Pulsed drain current: 484A
Power dissipation: 321W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 283nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVH4L015N065SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 483A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Pulsed drain current: 483A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 16Ω
Mounting: THT
Gate charge: 283C
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 483A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Pulsed drain current: 483A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 16Ω
Mounting: THT
Gate charge: 283C
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVBB30H60CTT4G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.78V
Max. load current: 30A
Max. forward impulse current: 260A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.78V
Max. load current: 30A
Max. forward impulse current: 260A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGD1240G2 |
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; DPAK
Type of transistor: IGBT
Case: DPAK
Mounting: SMD
Category: SMD IGBT transistors
Description: Transistor: IGBT; DPAK
Type of transistor: IGBT
Case: DPAK
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FGD3050G2 |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 500V; 27A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 500V
Collector current: 27A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Version: ESD
Features of semiconductor devices: logic level
Application: ignition systems
Category: SMD IGBT transistors
Description: Transistor: IGBT; 500V; 27A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 500V
Collector current: 27A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Version: ESD
Features of semiconductor devices: logic level
Application: ignition systems
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGD3440G2-F085 |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 166W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 166W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Version: ESD
Features of semiconductor devices: logic level
Application: ignition systems
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 166W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 166W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Version: ESD
Features of semiconductor devices: logic level
Application: ignition systems
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ISL9V2040D3ST |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 10A; 130W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 10A
Power dissipation: 130W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Version: ESD
Features of semiconductor devices: logic level
Application: ignition systems
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 10A; 130W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 10A
Power dissipation: 130W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Version: ESD
Features of semiconductor devices: logic level
Application: ignition systems
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS15 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS15FA |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP380HMUAJAATBG |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5...2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5...2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP380HSN10AAT1G |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP5
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP5
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP380LMUAJAATBG |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5...2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5...2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP380HSNAJAAT1G |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; TSOP6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5...2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP6
On-state resistance: 70mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Operating temperature: -40...85°C
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; TSOP6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5...2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP6
On-state resistance: 70mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCP380LSN05AAT1G |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP5
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP5
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP380HMU05AATBG |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP380LSNAJAAT1G |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; TSOP6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5...2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP6
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; TSOP6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5...2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP6
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP380HMU10AATBG |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP380HMU15AATBG |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP380HMU20AATBG |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP380HMU21AATBG |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.1A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.1A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP380LMU05AATBG |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP380LSN10AAT1G |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP5
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP5
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM2904ADMR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; Micro8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: Micro8
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; Micro8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: Micro8
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 200nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EGP20K |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 2A; Ifsm: 75A; DO15; reel,tape; 75ns
Mounting: THT
Max. forward impulse current: 75A
Max. off-state voltage: 0.8kV
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DO15
Type of diode: rectifying
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 2A; Ifsm: 75A; DO15; reel,tape; 75ns
Mounting: THT
Max. forward impulse current: 75A
Max. off-state voltage: 0.8kV
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DO15
Type of diode: rectifying
Reverse recovery time: 75ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVBS310FA |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 3A; reel,tape
Max. forward impulse current: 80A
Max. forward voltage: 0.85V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 3A; reel,tape
Max. forward impulse current: 80A
Max. forward voltage: 0.85V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Type of diode: Schottky rectifying
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVBS3100T3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape
Max. forward impulse current: 130A
Max. forward voltage: 0.9V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape
Max. forward impulse current: 130A
Max. forward voltage: 0.9V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBZ6V2ALT1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2V; 2.76A; 24W; double,common anode; ESD; SOT23
Type of diode: TVS array
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common anode; double
Kind of package: reel; tape
Number of channels: 2
Breakdown voltage: 6.2V
Max. forward impulse current: 2.76A
Peak pulse power dissipation: 24W
Version: ESD
Max. off-state voltage: 3V
Leakage current: 0.5µA
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2V; 2.76A; 24W; double,common anode; ESD; SOT23
Type of diode: TVS array
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common anode; double
Kind of package: reel; tape
Number of channels: 2
Breakdown voltage: 6.2V
Max. forward impulse current: 2.76A
Peak pulse power dissipation: 24W
Version: ESD
Max. off-state voltage: 3V
Leakage current: 0.5µA
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 98+ | 0.87 EUR |
| 74VHC373MTC |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷5.5VDC; SMD; TSSOP20; VHC; -40÷85°C
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Operating temperature: -40...85°C
Trigger: level-triggered
Quiescent current: 40µA
Kind of package: tube
Case: TSSOP20
Family: VHC
Kind of integrated circuit: D latch
Number of channels: 8
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷5.5VDC; SMD; TSSOP20; VHC; -40÷85°C
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Operating temperature: -40...85°C
Trigger: level-triggered
Quiescent current: 40µA
Kind of package: tube
Case: TSSOP20
Family: VHC
Kind of integrated circuit: D latch
Number of channels: 8
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 74VHC373MTCX |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Kind of package: reel; tape
Case: TSSOP20
Family: VHC
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Kind of package: reel; tape
Case: TSSOP20
Family: VHC
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 74VHC373MX |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷5.5VDC; SMD; SO20-W; VHC; -40÷85°C; VHC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Operating temperature: -40...85°C
Trigger: level-triggered
Quiescent current: 40µA
Kind of package: reel; tape
Case: SO20-W
Family: VHC
Kind of integrated circuit: D latch
Number of channels: 8
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷5.5VDC; SMD; SO20-W; VHC; -40÷85°C; VHC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Operating temperature: -40...85°C
Trigger: level-triggered
Quiescent current: 40µA
Kind of package: reel; tape
Case: SO20-W
Family: VHC
Kind of integrated circuit: D latch
Number of channels: 8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74VHC373DTR2G |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Kind of package: reel; tape
Case: TSSOP20
Family: VHC
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Kind of package: reel; tape
Case: TSSOP20
Family: VHC
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74VHC373DWR2G |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Kind of package: reel; tape
Case: SOIC20
Family: VHC
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Kind of package: reel; tape
Case: SOIC20
Family: VHC
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FAN53880UC002X |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WLCSP25; SMD; reel,tape
Mounting: SMD
Type of integrated circuit: PMIC
Kind of package: reel; tape
Case: WLCSP25
Kind of integrated circuit: DC/DC converter
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WLCSP25; SMD; reel,tape
Mounting: SMD
Type of integrated circuit: PMIC
Kind of package: reel; tape
Case: WLCSP25
Kind of integrated circuit: DC/DC converter
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZMMSZ5V1T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZxxTxG
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZxxTxG
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDP036N10A |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 214A; Idm: 856A; 333W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 214A
Pulsed drain current: 856A
Power dissipation: 333W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 214A; Idm: 856A; 333W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 214A
Pulsed drain current: 856A
Power dissipation: 333W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 134 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 7.47 EUR |
| 15+ | 5.82 EUR |
| 50+ | 5.51 EUR |
| BZX84C30LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; SOT23; single diode; reel,tape; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; SOT23; single diode; reel,tape; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
auf Bestellung 523 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 523+ | 0.17 EUR |
| SZBZX84C30ET1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±7%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±7%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZBZX84C30LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; SOT23; single diode; reel,tape; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; SOT23; single diode; reel,tape; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NRVBB60H100CTT4G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 30Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.98V
Max. load current: 60A
Max. forward impulse current: 350A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 30Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.98V
Max. load current: 60A
Max. forward impulse current: 350A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MOC3063M |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 600V
Kind of output: zero voltage crossing driver
Case: DIP6
Trigger current: 5mA
Mounting: THT
Manufacturer series: MOC3063M
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 600V
Kind of output: zero voltage crossing driver
Case: DIP6
Trigger current: 5mA
Mounting: THT
Manufacturer series: MOC3063M
auf Bestellung 785 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 65+ | 1.31 EUR |
| 126+ | 0.68 EUR |
| 141+ | 0.61 EUR |
| 154+ | 0.56 EUR |
| 166+ | 0.51 EUR |
| MOC256M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 20-150%@10mA
Collector-emitter voltage: 30V
Case: SO8
Max. off-state voltage: 6V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 20-150%@10mA
Collector-emitter voltage: 30V
Case: SO8
Max. off-state voltage: 6V
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| GBU8M |
|
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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| MMBT3904 |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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| MC14532BDR2G |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; priority encoder; SMD; SOIC16; Ch: 1; IN: 8; 3÷18V
Operating temperature: -55...125°C
Mounting: SMD
Supply voltage: 3...18V
Type of integrated circuit: digital
Number of inputs: 8
Case: SOIC16
Number of outputs: 3
Kind of integrated circuit: priority encoder
Number of channels: 1
Category: Interfaces others - integrated circuits
Description: IC: digital; priority encoder; SMD; SOIC16; Ch: 1; IN: 8; 3÷18V
Operating temperature: -55...125°C
Mounting: SMD
Supply voltage: 3...18V
Type of integrated circuit: digital
Number of inputs: 8
Case: SOIC16
Number of outputs: 3
Kind of integrated circuit: priority encoder
Number of channels: 1
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| FDBL9401-F085T6 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 90.3W; H-PSOF8L
Mounting: SMD
Power dissipation: 90.3W
Gate charge: 148nC
Polarisation: unipolar
Drain current: 240A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: H-PSOF8L
On-state resistance: 670µΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 90.3W; H-PSOF8L
Mounting: SMD
Power dissipation: 90.3W
Gate charge: 148nC
Polarisation: unipolar
Drain current: 240A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: H-PSOF8L
On-state resistance: 670µΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| FDBL9406-F085T6 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 68.2W; H-PSOF8L
Mounting: SMD
Power dissipation: 68.2W
Gate charge: 75nC
Polarisation: unipolar
Drain current: 240A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: H-PSOF8L
On-state resistance: 1.21mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 68.2W; H-PSOF8L
Mounting: SMD
Power dissipation: 68.2W
Gate charge: 75nC
Polarisation: unipolar
Drain current: 240A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: H-PSOF8L
On-state resistance: 1.21mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| FDBL0065N40 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 429W; H-PSOF8L
Mounting: SMD
Power dissipation: 429W
Gate charge: 0.22µC
Polarisation: unipolar
Drain current: 300A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: H-PSOF8L
On-state resistance: 0.65mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 429W; H-PSOF8L
Mounting: SMD
Power dissipation: 429W
Gate charge: 0.22µC
Polarisation: unipolar
Drain current: 300A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: H-PSOF8L
On-state resistance: 0.65mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| FDBL0090N40 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 357W; H-PSOF8L
Mounting: SMD
Power dissipation: 357W
Gate charge: 144nC
Polarisation: unipolar
Drain current: 240A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: H-PSOF8L
On-state resistance: 0.9mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 357W; H-PSOF8L
Mounting: SMD
Power dissipation: 357W
Gate charge: 144nC
Polarisation: unipolar
Drain current: 240A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: H-PSOF8L
On-state resistance: 0.9mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| MMBZ15VALT1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; ESD; SOT23
Type of diode: TVS array
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Number of channels: 2
Tolerance: ±5%
Kind of package: reel; tape
Version: ESD
Leakage current: 50nA
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; ESD; SOT23
Type of diode: TVS array
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Number of channels: 2
Tolerance: ±5%
Kind of package: reel; tape
Version: ESD
Leakage current: 50nA
auf Bestellung 8601 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 385+ | 0.23 EUR |
| 532+ | 0.15 EUR |
| 648+ | 0.13 EUR |
| 747+ | 0.11 EUR |
| 866+ | 0.099 EUR |
| 1049+ | 0.081 EUR |
| 1205+ | 0.07 EUR |
| 1341+ | 0.063 EUR |
| 3000+ | 0.052 EUR |
| SZMMBZ15VALT1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Number of channels: 2
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Number of channels: 2
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| MMBZ15VDLT1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common cathode; ESD; SOT23
Type of diode: TVS array
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12.8V
Number of channels: 2
Tolerance: ±5%
Kind of package: reel; tape
Version: ESD
Leakage current: 0.1µA
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common cathode; ESD; SOT23
Type of diode: TVS array
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12.8V
Number of channels: 2
Tolerance: ±5%
Kind of package: reel; tape
Version: ESD
Leakage current: 0.1µA
auf Bestellung 1709 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 385+ | 0.23 EUR |
| 511+ | 0.17 EUR |
| 582+ | 0.14 EUR |
| 828+ | 0.1 EUR |
| 951+ | 0.089 EUR |
| 1266+ | 0.067 EUR |
| 1441+ | 0.06 EUR |
| 1553+ | 0.055 EUR |
| MMBZ15VDLT3G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common cathode; ESD; SOT23
Type of diode: TVS array
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12.8V
Number of channels: 2
Tolerance: ±5%
Kind of package: reel; tape
Version: ESD
Leakage current: 0.1µA
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common cathode; ESD; SOT23
Type of diode: TVS array
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12.8V
Number of channels: 2
Tolerance: ±5%
Kind of package: reel; tape
Version: ESD
Leakage current: 0.1µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| SZMMBZ15VDLT1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Number of channels: 2
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Number of channels: 2
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| BF720T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 50
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 50
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
auf Bestellung 412 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 91+ | 0.94 EUR |
| 119+ | 0.71 EUR |
| 142+ | 0.6 EUR |
| 258+ | 0.33 EUR |
| SBF720T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 50
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 50
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| FDB0190N807L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Mounting: SMD
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK-6
On-state resistance: 4.3mΩ
Pulsed drain current: 1.44kA
Power dissipation: 250W
Gate charge: 249nC
Polarisation: unipolar
Drain current: 190A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Mounting: SMD
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK-6
On-state resistance: 4.3mΩ
Pulsed drain current: 1.44kA
Power dissipation: 250W
Gate charge: 249nC
Polarisation: unipolar
Drain current: 190A
Kind of channel: enhancement
auf Bestellung 778 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 8.16 EUR |
| 13+ | 6.82 EUR |
| 15+ | 6.06 EUR |
| 100+ | 5.58 EUR |
| NTHL099N60S5 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 95A; 184W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Power dissipation: 184W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 95A
Gate charge: 48nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 95A; 184W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Power dissipation: 184W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 95A
Gate charge: 48nC
Produkt ist nicht verfügbar
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| FCMT199N60 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 208W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60.6A
Gate charge: 57nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 208W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60.6A
Gate charge: 57nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| FCMT299N60 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Power dissipation: 125W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 51nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Power dissipation: 125W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 51nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH