Foto | Bezeichnung | Hersteller | Beschreibung |
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FDP42AN15A0 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB Mounting: THT On-state resistance: 0.107Ω Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar Kind of package: tube Gate charge: 39nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V Case: TO220AB Drain-source voltage: 150V Drain current: 24A |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
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SZMMBZ20VALT1G | ONSEMI |
![]() Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; ±5% Type of diode: TVS array Breakdown voltage: 20V Max. forward impulse current: 1.4A Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 17V Kind of package: reel; tape Application: automotive industry Tolerance: ±5% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MC100EP52DTG | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP8; tube; OUT: ECL Type of integrated circuit: digital Mounting: SMD Number of channels: 1 Case: TSSOP8 Operating temperature: -40...85°C Kind of package: tube Kind of output: ECL Trigger: positive-edge-triggered Kind of integrated circuit: D flip-flop Supply voltage: 3.3...5V DC |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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KSE44H11 | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: bulk Frequency: 50MHz Pulsed collector current: 20A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NTHL082N65S3F | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 25.5A; Idm: 100A; 313W; TO247 Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 650V Drain current: 25.5A Pulsed drain current: 100A Power dissipation: 313W Case: TO247 Gate-source voltage: ±30V On-state resistance: 82mΩ Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
BAW56M3T5G | ONSEMI |
![]() Description: Diode: switching; SMD; 75V; 0.2A; 6ns; SOT723; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common anode; double Case: SOT723 Kind of package: reel; tape Features of semiconductor devices: small signal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FDMC86570LET60 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 436A; 65W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 62A Pulsed drain current: 436A Power dissipation: 65W Case: Power33 Gate-source voltage: ±20V On-state resistance: 6.9mΩ Mounting: SMD Gate charge: 88nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FDMC86324 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8 Case: PQFN8 Drain-source voltage: 80V Drain current: 20A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 41W Polarisation: unipolar Kind of package: reel; tape Gate charge: 18nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
FDMC86320 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 50A; 40W; Power33 Case: Power33 Drain-source voltage: 80V Drain current: 22A On-state resistance: 18mΩ Type of transistor: N-MOSFET Power dissipation: 40W Polarisation: unipolar Kind of package: reel; tape Gate charge: 41nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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KSD560YTU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB Collector current: 5A Power dissipation: 1.5W Polarisation: bipolar Collector-emitter voltage: 100V Type of transistor: NPN Case: TO220AB Mounting: THT Kind of transistor: Darlington Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
KSD1588YTU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 7A; 30W; TO220FP Collector-emitter voltage: 60V Current gain: 100...200 Collector current: 7A Pulsed collector current: 15A Type of transistor: NPN Power dissipation: 30W Polarisation: bipolar Kind of package: tube Mounting: THT Case: TO220FP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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KSD1692YS | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 3A; 15W; TO126ISO Collector-emitter voltage: 100V Current gain: 4000...12000 Collector current: 3A Type of transistor: NPN Power dissipation: 15W Polarisation: bipolar Kind of package: tube Kind of transistor: Darlington Mounting: THT Case: TO126ISO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FQPF16N25C | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 9.8A; Idm: 62.4A; 43W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 9.8A Pulsed drain current: 62.4A Power dissipation: 43W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 53.5nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC74LCX16244DTG | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX Case: TSSOP48 Mounting: SMD Manufacturer series: LCX Kind of integrated circuit: buffer; line driver; non-inverting Supply voltage: 2...3.6V DC Type of integrated circuit: digital Number of channels: 16 Kind of output: 3-state Operating temperature: -40...85°C |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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74LCX16244MTD | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX Case: TSSOP48 Mounting: SMD Manufacturer series: LCX Kind of integrated circuit: buffer; line driver; non-inverting Part status: Not recommended for new designs Supply voltage: 2...3.6V DC Type of integrated circuit: digital Number of channels: 16 Quiescent current: 20µA Kind of output: 3-state Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC74LVXC3245DTRG | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver; translator Number of channels: 8 Supply voltage: 2.3...5.5V DC Mounting: SMD Case: TSSOP24 Operating temperature: -40...85°C Kind of package: reel; tape Manufacturer series: LVX Quiescent current: 50µA Kind of output: 3-state |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDN337N | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 2.2A; 0.5W; SuperSOT-3 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.2A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 80mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 4523 Stücke: Lieferzeit 14-21 Tag (e) |
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SB5100 | ONSEMI |
![]() ![]() ![]() Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; 5W; reel,tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 5A Semiconductor structure: single diode Case: DO201 Max. forward impulse current: 150A Capacitance: 380pF Kind of package: reel; tape Power dissipation: 5W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
MBRA210LT3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 10V; 2A; reel,tape Mounting: SMD Max. forward voltage: 0.26V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 160A Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 10V Case: SMA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FDPF12N50T | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 42W Case: TO220FP Mounting: THT Kind of package: tube Gate charge: 30nC Technology: UniFET™ Kind of channel: enhancement Gate-source voltage: ±30V Drain-source voltage: 500V Drain current: 6.9A On-state resistance: 0.65Ω |
auf Bestellung 217 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC3073M | ONSEMI |
![]() Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3073M Type of optocoupler: optotriac Case: DIP6 Max. off-state voltage: 3V Output voltage: 800V Number of channels: 1 Kind of output: triac; without zero voltage crossing driver Insulation voltage: 4.17kV Trigger current: 6mA Manufacturer series: MOC3073M Mounting: THT |
auf Bestellung 398 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBTA14 | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 1.2A Power dissipation: 0.35W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FSL146MRBN | ONSEMI |
![]() Description: IC: PMIC; PWM controller; 1.5A; 650V; 67kHz; Ch: 1; DIP8; flyback Output voltage: 650V Power: 26W Operating temperature: -40...125°C Number of channels: 1 Mounting: THT Duty cycle factor: 61...73% Kind of integrated circuit: PWM controller Topology: flyback Input voltage: 85...265V Case: DIP8 Operating voltage: 7.5...24.5V DC Frequency: 67kHz On-state resistance: 2.6Ω Output current: 1.5A Type of integrated circuit: PMIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDB3652 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 61A; 150W; D2PAK Mounting: SMD Case: D2PAK Kind of package: reel; tape Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar Gate charge: 53nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 61A On-state resistance: 43mΩ |
auf Bestellung 408 Stücke: Lieferzeit 14-21 Tag (e) |
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TIP121G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 5A Power dissipation: 2W Case: TO220AB Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMSZ4684T1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode Mounting: SMD Case: SOD123 Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 3.3V Leakage current: 7.5µA Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Zener Manufacturer series: MMSZ4xxT1G |
auf Bestellung 7219 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP3232NMNTXG | ONSEMI |
![]() Description: IC: PMIC; QFN40; buck; 4.5÷23VDC Case: QFN40 Mounting: SMD Number of channels: 1 Operating temperature: -40...125°C Topology: buck Frequency: 450...550kHz Operating voltage: 4.5...23V DC Output current: 15A Type of integrated circuit: PMIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MC74VHCT125ADR2G | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; VHCT; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Quiescent current: 40µA Kind of package: reel; tape Manufacturer series: VHCT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SZMMSZ4685T1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 7.5µA Manufacturer series: MMSZ4xxT1G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
FDLL4150 | ONSEMI |
![]() Description: Diode: switching; SMD; 50V; 0.4A; 6ns; SOD80; reel,tape Semiconductor structure: single diode Load current: 0.4A Max. off-state voltage: 50V Case: SOD80 Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: small signal Mounting: SMD Reverse recovery time: 6ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
1N5250B | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 20V; bulk; CASE017AG; single diode; 0.1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 20V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Manufacturer series: 1N52xxB |
auf Bestellung 4996 Stücke: Lieferzeit 14-21 Tag (e) |
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2SB1202S-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 3A; 1W; IPAK Mounting: THT Case: IPAK Kind of package: tube Collector-emitter voltage: 50V Current gain: 140...280 Collector current: 3A Type of transistor: PNP Power dissipation: 1W Polarisation: bipolar Frequency: 150MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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2N5192G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 4A; 40W; TO225 Case: TO225 Frequency: 2MHz Collector-emitter voltage: 80V Current gain: 20...80 Collector current: 4A Type of transistor: NPN Power dissipation: 40W Polarisation: bipolar Kind of package: bulk Mounting: THT |
auf Bestellung 483 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5191G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 4A; 40W; TO225 Case: TO225 Frequency: 2MHz Collector-emitter voltage: 60V Current gain: 25...100 Collector current: 4A Type of transistor: NPN Power dissipation: 40W Polarisation: bipolar Kind of package: bulk Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
SZBZX84C3V3LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: BZX84C Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SZBZX84C3V3ET1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.3V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FSA2467MPX | ONSEMI |
![]() Description: IC: analog switch; Ch: 4; MLP16; 1.65÷4.3VDC; reel,tape; 500nA Supply voltage: 1.65...4.3V DC Type of integrated circuit: analog switch Number of channels: 4 Quiescent current: 500nA Kind of output: DPDT x2 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Case: MLP16 |
Produkt ist nicht verfügbar |
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H11G1M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 100V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 2.5kV Case: DIP6 Turn-off time: 0.1ms CTR@If: 100%@10mA Collector-emitter voltage: 100V Turn-on time: 5µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
SZ1SMA5930BT3G | ONSEMI |
![]() Description: Diode: Zener; 1.5W; 16V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FFSH1065B-F085 | ONSEMI |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 11.5A; TO247-2; tube Max. off-state voltage: 650V Application: automotive industry Kind of package: tube Type of diode: Schottky rectifying Case: TO247-2 Mounting: THT Technology: SiC Load current: 11.5A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NJW21194G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO3P Mounting: THT Case: TO3P Frequency: 4MHz Collector-emitter voltage: 250V Current gain: 20...70 Collector current: 16A Type of transistor: NPN Application: automotive industry Power dissipation: 200W Polarisation: bipolar Kind of package: tube |
auf Bestellung 123 Stücke: Lieferzeit 14-21 Tag (e) |
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MJW21194G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO247-3 Mounting: THT Case: TO247-3 Frequency: 4MHz Collector-emitter voltage: 250V Current gain: 8...80 Collector current: 16A Type of transistor: NPN Power dissipation: 200W Polarisation: bipolar Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
FCH104N60 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 111A; 357W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 357W Case: TO247 Gate-source voltage: ±20V On-state resistance: 96mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 63nC Pulsed drain current: 111A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
2SD1802S-TL-E | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 50V; 3A; 1W; TO252 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 1W Case: TO252 Current gain: 100...560 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MM74HCT05M | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; HCT; 4.5÷5.5VDC; tube Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: tube Kind of output: open drain Manufacturer series: HCT Quiescent current: 20µA |
Produkt ist nicht verfügbar |
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2SA2202-TD-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 100V; 2A; 1.3W; SOT89 Mounting: SMD Type of transistor: PNP Power dissipation: 1.3W Polarisation: bipolar Kind of package: reel; tape Case: SOT89 Frequency: 300MHz Collector-emitter voltage: 100V Current gain: 200...400 Collector current: 2A |
Produkt ist nicht verfügbar |
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2SA2013-TD-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 4A; 1.3W; SOT89 Mounting: SMD Type of transistor: PNP Power dissipation: 1.3W Polarisation: bipolar Kind of package: reel; tape Case: SOT89 Frequency: 360MHz Collector-emitter voltage: 50V Current gain: 200...560 Collector current: 4A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
2SA2126-TL-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; DPAK Mounting: SMD Type of transistor: PNP Power dissipation: 0.8W Polarisation: bipolar Kind of package: reel; tape Case: DPAK Frequency: 390MHz Collector-emitter voltage: 50V Current gain: 200...560 Collector current: 3A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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2SA2124-TD-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 30V; 2A; 3.5W; SOT89 Mounting: SMD Type of transistor: PNP Power dissipation: 3.5W Polarisation: bipolar Kind of package: reel; tape Case: SOT89 Frequency: 440MHz Collector-emitter voltage: 30V Current gain: 65...560 Collector current: 2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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2SA2153-TD-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 2A; 1.3W; SOT89 Mounting: SMD Type of transistor: PNP Power dissipation: 1.3W Polarisation: bipolar Kind of package: reel; tape Case: SOT89 Frequency: 420MHz Collector-emitter voltage: 50V Current gain: 200...560 Collector current: 2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
MOC3072SM | ONSEMI |
![]() Description: Optotriac; 4.17kV; Uout: 800V; PDIP6; Ch: 1; MOC3072M; 1kV/μs Type of optocoupler: optotriac Case: PDIP6 Max. off-state voltage: 3V Output voltage: 800V Number of channels: 1 Kind of output: triac; zero voltage crossing driver Insulation voltage: 4.17kV Trigger current: 10mA Slew rate: 1kV/μs Manufacturer series: MOC3072M Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MOC3073SM | ONSEMI |
![]() Description: Optotriac; 4.17kV; Uout: 800V; PDIP6; Ch: 1; MOC3073M; 1kV/μs Type of optocoupler: optotriac Case: PDIP6 Max. off-state voltage: 3V Output voltage: 800V Number of channels: 1 Kind of output: triac; without zero voltage crossing driver Insulation voltage: 4.17kV Trigger current: 6mA Slew rate: 1kV/μs Manufacturer series: MOC3073M Mounting: SMD |
Produkt ist nicht verfügbar |
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MOC3073SVM | ONSEMI |
![]() Description: Optotriac Type of optocoupler: optotriac |
auf Bestellung 534 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP1597AMNTWG | ONSEMI |
![]() Description: IC: PMIC; Uin: 4÷5.5V; DFN6; buck Type of integrated circuit: PMIC Input voltage: 4...5.5V Output current: 2A Frequency: 0.87...1.13MHz Mounting: SMD Case: DFN6 Topology: buck Number of channels: 1 Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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GBPC3510W | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk Max. forward voltage: 1.1V |
Produkt ist nicht verfügbar |
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74VHC132M | ONSEMI |
![]() ![]() Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube Type of integrated circuit: digital Operating temperature: -40...85°C Case: SO14 Number of inputs: 2 Supply voltage: 2...5.5V DC Number of channels: quad; 4 Quiescent current: 20µA Kind of package: tube Kind of input: with Schmitt trigger Kind of gate: NAND Family: VHC Mounting: SMD |
Produkt ist nicht verfügbar |
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74VHC132MX | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; 20uA Type of integrated circuit: digital Operating temperature: -40...85°C Case: SO14 Number of inputs: 2 Supply voltage: 2...5.5V DC Number of channels: quad; 4 Quiescent current: 20µA Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of gate: NAND Family: VHC Mounting: SMD |
Produkt ist nicht verfügbar |
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MC74VHC132DG | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: tube Quiescent current: 20µA Kind of input: with Schmitt trigger Family: VHC |
Produkt ist nicht verfügbar |
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MC74VHC132DR2G | ONSEMI |
![]() Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS; SMD; SOIC14 Type of integrated circuit: digital Kind of gate: NAND Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SOIC14 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: VHC Manufacturer series: VHC Kind of integrated circuit: Schmitt trigger |
Produkt ist nicht verfügbar |
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MC74VHC132DTR2G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; 20uA Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 20µA Kind of input: with Schmitt trigger Family: VHC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
FDP42AN15A0 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB
Mounting: THT
On-state resistance: 0.107Ω
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO220AB
Drain-source voltage: 150V
Drain current: 24A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB
Mounting: THT
On-state resistance: 0.107Ω
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO220AB
Drain-source voltage: 150V
Drain current: 24A
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.56 EUR |
36+ | 2.03 EUR |
38+ | 1.92 EUR |
SZMMBZ20VALT1G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 20V
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 17V
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 20V
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 17V
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Produkt ist nicht verfügbar
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MC100EP52DTG |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP8; tube; OUT: ECL
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 1
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: ECL
Trigger: positive-edge-triggered
Kind of integrated circuit: D flip-flop
Supply voltage: 3.3...5V DC
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP8; tube; OUT: ECL
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 1
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: ECL
Trigger: positive-edge-triggered
Kind of integrated circuit: D flip-flop
Supply voltage: 3.3...5V DC
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.63 EUR |
8+ | 9.09 EUR |
KSE44H11 |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Pulsed collector current: 20A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Pulsed collector current: 20A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTHL082N65S3F |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 25.5A; Idm: 100A; 313W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 25.5A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 25.5A; Idm: 100A; 313W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 25.5A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
BAW56M3T5G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 6ns; SOT723; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT723
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 6ns; SOT723; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT723
Kind of package: reel; tape
Features of semiconductor devices: small signal
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FDMC86570LET60 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 436A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 62A
Pulsed drain current: 436A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 436A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 62A
Pulsed drain current: 436A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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FDMC86324 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8
Case: PQFN8
Drain-source voltage: 80V
Drain current: 20A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8
Case: PQFN8
Drain-source voltage: 80V
Drain current: 20A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
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FDMC86320 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 50A; 40W; Power33
Case: Power33
Drain-source voltage: 80V
Drain current: 22A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 50A; 40W; Power33
Case: Power33
Drain-source voltage: 80V
Drain current: 22A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
KSD560YTU |
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Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB
Collector current: 5A
Power dissipation: 1.5W
Polarisation: bipolar
Collector-emitter voltage: 100V
Type of transistor: NPN
Case: TO220AB
Mounting: THT
Kind of transistor: Darlington
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB
Collector current: 5A
Power dissipation: 1.5W
Polarisation: bipolar
Collector-emitter voltage: 100V
Type of transistor: NPN
Case: TO220AB
Mounting: THT
Kind of transistor: Darlington
Kind of package: tube
Produkt ist nicht verfügbar
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Stück im Wert von UAH
KSD1588YTU |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 7A; 30W; TO220FP
Collector-emitter voltage: 60V
Current gain: 100...200
Collector current: 7A
Pulsed collector current: 15A
Type of transistor: NPN
Power dissipation: 30W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO220FP
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 7A; 30W; TO220FP
Collector-emitter voltage: 60V
Current gain: 100...200
Collector current: 7A
Pulsed collector current: 15A
Type of transistor: NPN
Power dissipation: 30W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO220FP
Produkt ist nicht verfügbar
Im Einkaufswagen
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KSD1692YS |
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Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 3A; 15W; TO126ISO
Collector-emitter voltage: 100V
Current gain: 4000...12000
Collector current: 3A
Type of transistor: NPN
Power dissipation: 15W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Mounting: THT
Case: TO126ISO
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 3A; 15W; TO126ISO
Collector-emitter voltage: 100V
Current gain: 4000...12000
Collector current: 3A
Type of transistor: NPN
Power dissipation: 15W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Mounting: THT
Case: TO126ISO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FQPF16N25C |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.8A; Idm: 62.4A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.8A
Pulsed drain current: 62.4A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.8A; Idm: 62.4A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.8A
Pulsed drain current: 62.4A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC74LCX16244DTG |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Case: TSSOP48
Mounting: SMD
Manufacturer series: LCX
Kind of integrated circuit: buffer; line driver; non-inverting
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 16
Kind of output: 3-state
Operating temperature: -40...85°C
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Case: TSSOP48
Mounting: SMD
Manufacturer series: LCX
Kind of integrated circuit: buffer; line driver; non-inverting
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 16
Kind of output: 3-state
Operating temperature: -40...85°C
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.10 EUR |
74LCX16244MTD |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Case: TSSOP48
Mounting: SMD
Manufacturer series: LCX
Kind of integrated circuit: buffer; line driver; non-inverting
Part status: Not recommended for new designs
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 16
Quiescent current: 20µA
Kind of output: 3-state
Operating temperature: -40...85°C
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Case: TSSOP48
Mounting: SMD
Manufacturer series: LCX
Kind of integrated circuit: buffer; line driver; non-inverting
Part status: Not recommended for new designs
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 16
Quiescent current: 20µA
Kind of output: 3-state
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74LVXC3245DTRG |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Supply voltage: 2.3...5.5V DC
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: LVX
Quiescent current: 50µA
Kind of output: 3-state
Category: Level translators
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Supply voltage: 2.3...5.5V DC
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: LVX
Quiescent current: 50µA
Kind of output: 3-state
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDN337N |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4523 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
120+ | 0.60 EUR |
222+ | 0.32 EUR |
296+ | 0.24 EUR |
618+ | 0.12 EUR |
650+ | 0.11 EUR |
SB5100 |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 380pF
Kind of package: reel; tape
Power dissipation: 5W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 380pF
Kind of package: reel; tape
Power dissipation: 5W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MBRA210LT3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 10V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.26V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 160A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 10V
Case: SMA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 10V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.26V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 160A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 10V
Case: SMA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDPF12N50T |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 42W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 30nC
Technology: UniFET™
Kind of channel: enhancement
Gate-source voltage: ±30V
Drain-source voltage: 500V
Drain current: 6.9A
On-state resistance: 0.65Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 42W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 30nC
Technology: UniFET™
Kind of channel: enhancement
Gate-source voltage: ±30V
Drain-source voltage: 500V
Drain current: 6.9A
On-state resistance: 0.65Ω
auf Bestellung 217 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
30+ | 2.43 EUR |
33+ | 2.19 EUR |
43+ | 1.67 EUR |
46+ | 1.57 EUR |
MOC3073M |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3073M
Type of optocoupler: optotriac
Case: DIP6
Max. off-state voltage: 3V
Output voltage: 800V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 4.17kV
Trigger current: 6mA
Manufacturer series: MOC3073M
Mounting: THT
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3073M
Type of optocoupler: optotriac
Case: DIP6
Max. off-state voltage: 3V
Output voltage: 800V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 4.17kV
Trigger current: 6mA
Manufacturer series: MOC3073M
Mounting: THT
auf Bestellung 398 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
36+ | 2.00 EUR |
56+ | 1.29 EUR |
70+ | 1.02 EUR |
74+ | 0.97 EUR |
MMBTA14 |
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Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Produkt ist nicht verfügbar
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FSL146MRBN |
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Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 650V; 67kHz; Ch: 1; DIP8; flyback
Output voltage: 650V
Power: 26W
Operating temperature: -40...125°C
Number of channels: 1
Mounting: THT
Duty cycle factor: 61...73%
Kind of integrated circuit: PWM controller
Topology: flyback
Input voltage: 85...265V
Case: DIP8
Operating voltage: 7.5...24.5V DC
Frequency: 67kHz
On-state resistance: 2.6Ω
Output current: 1.5A
Type of integrated circuit: PMIC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 650V; 67kHz; Ch: 1; DIP8; flyback
Output voltage: 650V
Power: 26W
Operating temperature: -40...125°C
Number of channels: 1
Mounting: THT
Duty cycle factor: 61...73%
Kind of integrated circuit: PWM controller
Topology: flyback
Input voltage: 85...265V
Case: DIP8
Operating voltage: 7.5...24.5V DC
Frequency: 67kHz
On-state resistance: 2.6Ω
Output current: 1.5A
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
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FDB3652 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 61A; 150W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 53nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 61A
On-state resistance: 43mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 61A; 150W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 53nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 61A
On-state resistance: 43mΩ
auf Bestellung 408 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.30 EUR |
36+ | 2.03 EUR |
41+ | 1.74 EUR |
44+ | 1.66 EUR |
TIP121G |
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Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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MMSZ4684T1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 3.3V
Leakage current: 7.5µA
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ4xxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 3.3V
Leakage current: 7.5µA
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ4xxT1G
auf Bestellung 7219 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
491+ | 0.15 EUR |
582+ | 0.12 EUR |
893+ | 0.08 EUR |
1073+ | 0.07 EUR |
2025+ | 0.04 EUR |
2137+ | 0.03 EUR |
3000+ | 0.03 EUR |
NCP3232NMNTXG |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN40; buck; 4.5÷23VDC
Case: QFN40
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Topology: buck
Frequency: 450...550kHz
Operating voltage: 4.5...23V DC
Output current: 15A
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN40; buck; 4.5÷23VDC
Case: QFN40
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Topology: buck
Frequency: 450...550kHz
Operating voltage: 4.5...23V DC
Output current: 15A
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
Im Einkaufswagen
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MC74VHCT125ADR2G |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; VHCT; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Quiescent current: 40µA
Kind of package: reel; tape
Manufacturer series: VHCT
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; VHCT; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Quiescent current: 40µA
Kind of package: reel; tape
Manufacturer series: VHCT
Produkt ist nicht verfügbar
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SZMMSZ4685T1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 7.5µA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 7.5µA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
Produkt ist nicht verfügbar
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FDLL4150 |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.4A; 6ns; SOD80; reel,tape
Semiconductor structure: single diode
Load current: 0.4A
Max. off-state voltage: 50V
Case: SOD80
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: small signal
Mounting: SMD
Reverse recovery time: 6ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.4A; 6ns; SOD80; reel,tape
Semiconductor structure: single diode
Load current: 0.4A
Max. off-state voltage: 50V
Case: SOD80
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: small signal
Mounting: SMD
Reverse recovery time: 6ns
Produkt ist nicht verfügbar
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1N5250B |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; bulk; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; bulk; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
auf Bestellung 4996 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
139+ | 0.51 EUR |
845+ | 0.09 EUR |
2000+ | 0.04 EUR |
2284+ | 0.03 EUR |
2959+ | 0.02 EUR |
3125+ | 0.02 EUR |
2SB1202S-E |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1W; IPAK
Mounting: THT
Case: IPAK
Kind of package: tube
Collector-emitter voltage: 50V
Current gain: 140...280
Collector current: 3A
Type of transistor: PNP
Power dissipation: 1W
Polarisation: bipolar
Frequency: 150MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1W; IPAK
Mounting: THT
Case: IPAK
Kind of package: tube
Collector-emitter voltage: 50V
Current gain: 140...280
Collector current: 3A
Type of transistor: PNP
Power dissipation: 1W
Polarisation: bipolar
Frequency: 150MHz
Produkt ist nicht verfügbar
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2N5192G |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 4A; 40W; TO225
Case: TO225
Frequency: 2MHz
Collector-emitter voltage: 80V
Current gain: 20...80
Collector current: 4A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 4A; 40W; TO225
Case: TO225
Frequency: 2MHz
Collector-emitter voltage: 80V
Current gain: 20...80
Collector current: 4A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
auf Bestellung 483 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.12 EUR |
79+ | 0.91 EUR |
99+ | 0.73 EUR |
105+ | 0.69 EUR |
250+ | 0.66 EUR |
2N5191G |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 40W; TO225
Case: TO225
Frequency: 2MHz
Collector-emitter voltage: 60V
Current gain: 25...100
Collector current: 4A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 40W; TO225
Case: TO225
Frequency: 2MHz
Collector-emitter voltage: 60V
Current gain: 25...100
Collector current: 4A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SZBZX84C3V3LT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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SZBZX84C3V3ET1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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FSA2467MPX |
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Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 4; MLP16; 1.65÷4.3VDC; reel,tape; 500nA
Supply voltage: 1.65...4.3V DC
Type of integrated circuit: analog switch
Number of channels: 4
Quiescent current: 500nA
Kind of output: DPDT x2
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Case: MLP16
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 4; MLP16; 1.65÷4.3VDC; reel,tape; 500nA
Supply voltage: 1.65...4.3V DC
Type of integrated circuit: analog switch
Number of channels: 4
Quiescent current: 500nA
Kind of output: DPDT x2
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Case: MLP16
Produkt ist nicht verfügbar
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H11G1M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
Case: DIP6
Turn-off time: 0.1ms
CTR@If: 100%@10mA
Collector-emitter voltage: 100V
Turn-on time: 5µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
Case: DIP6
Turn-off time: 0.1ms
CTR@If: 100%@10mA
Collector-emitter voltage: 100V
Turn-on time: 5µs
Produkt ist nicht verfügbar
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SZ1SMA5930BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 16V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 16V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
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FFSH1065B-F085 |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 11.5A; TO247-2; tube
Max. off-state voltage: 650V
Application: automotive industry
Kind of package: tube
Type of diode: Schottky rectifying
Case: TO247-2
Mounting: THT
Technology: SiC
Load current: 11.5A
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 11.5A; TO247-2; tube
Max. off-state voltage: 650V
Application: automotive industry
Kind of package: tube
Type of diode: Schottky rectifying
Case: TO247-2
Mounting: THT
Technology: SiC
Load current: 11.5A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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NJW21194G |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO3P
Mounting: THT
Case: TO3P
Frequency: 4MHz
Collector-emitter voltage: 250V
Current gain: 20...70
Collector current: 16A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 200W
Polarisation: bipolar
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO3P
Mounting: THT
Case: TO3P
Frequency: 4MHz
Collector-emitter voltage: 250V
Current gain: 20...70
Collector current: 16A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 200W
Polarisation: bipolar
Kind of package: tube
auf Bestellung 123 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.48 EUR |
19+ | 3.93 EUR |
20+ | 3.72 EUR |
30+ | 3.58 EUR |
MJW21194G |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO247-3
Mounting: THT
Case: TO247-3
Frequency: 4MHz
Collector-emitter voltage: 250V
Current gain: 8...80
Collector current: 16A
Type of transistor: NPN
Power dissipation: 200W
Polarisation: bipolar
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO247-3
Mounting: THT
Case: TO247-3
Frequency: 4MHz
Collector-emitter voltage: 250V
Current gain: 8...80
Collector current: 16A
Type of transistor: NPN
Power dissipation: 200W
Polarisation: bipolar
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
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FCH104N60 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 111A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 96mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 63nC
Pulsed drain current: 111A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 111A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 96mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 63nC
Pulsed drain current: 111A
Produkt ist nicht verfügbar
Im Einkaufswagen
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2SD1802S-TL-E |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1W; TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1W
Case: TO252
Current gain: 100...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1W; TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1W
Case: TO252
Current gain: 100...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
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MM74HCT05M |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; HCT; 4.5÷5.5VDC; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: open drain
Manufacturer series: HCT
Quiescent current: 20µA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; HCT; 4.5÷5.5VDC; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: open drain
Manufacturer series: HCT
Quiescent current: 20µA
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2SA2202-TD-E |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.3W; SOT89
Mounting: SMD
Type of transistor: PNP
Power dissipation: 1.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Frequency: 300MHz
Collector-emitter voltage: 100V
Current gain: 200...400
Collector current: 2A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.3W; SOT89
Mounting: SMD
Type of transistor: PNP
Power dissipation: 1.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Frequency: 300MHz
Collector-emitter voltage: 100V
Current gain: 200...400
Collector current: 2A
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2SA2013-TD-E |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 4A; 1.3W; SOT89
Mounting: SMD
Type of transistor: PNP
Power dissipation: 1.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Frequency: 360MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 4A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 4A; 1.3W; SOT89
Mounting: SMD
Type of transistor: PNP
Power dissipation: 1.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Frequency: 360MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 4A
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2SA2126-TL-E |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; DPAK
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.8W
Polarisation: bipolar
Kind of package: reel; tape
Case: DPAK
Frequency: 390MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 3A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; DPAK
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.8W
Polarisation: bipolar
Kind of package: reel; tape
Case: DPAK
Frequency: 390MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 3A
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2SA2124-TD-E |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 3.5W; SOT89
Mounting: SMD
Type of transistor: PNP
Power dissipation: 3.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Frequency: 440MHz
Collector-emitter voltage: 30V
Current gain: 65...560
Collector current: 2A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 3.5W; SOT89
Mounting: SMD
Type of transistor: PNP
Power dissipation: 3.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Frequency: 440MHz
Collector-emitter voltage: 30V
Current gain: 65...560
Collector current: 2A
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2SA2153-TD-E |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1.3W; SOT89
Mounting: SMD
Type of transistor: PNP
Power dissipation: 1.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Frequency: 420MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 2A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1.3W; SOT89
Mounting: SMD
Type of transistor: PNP
Power dissipation: 1.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Frequency: 420MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 2A
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MOC3072SM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; PDIP6; Ch: 1; MOC3072M; 1kV/μs
Type of optocoupler: optotriac
Case: PDIP6
Max. off-state voltage: 3V
Output voltage: 800V
Number of channels: 1
Kind of output: triac; zero voltage crossing driver
Insulation voltage: 4.17kV
Trigger current: 10mA
Slew rate: 1kV/μs
Manufacturer series: MOC3072M
Mounting: SMD
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; PDIP6; Ch: 1; MOC3072M; 1kV/μs
Type of optocoupler: optotriac
Case: PDIP6
Max. off-state voltage: 3V
Output voltage: 800V
Number of channels: 1
Kind of output: triac; zero voltage crossing driver
Insulation voltage: 4.17kV
Trigger current: 10mA
Slew rate: 1kV/μs
Manufacturer series: MOC3072M
Mounting: SMD
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MOC3073SM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; PDIP6; Ch: 1; MOC3073M; 1kV/μs
Type of optocoupler: optotriac
Case: PDIP6
Max. off-state voltage: 3V
Output voltage: 800V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 4.17kV
Trigger current: 6mA
Slew rate: 1kV/μs
Manufacturer series: MOC3073M
Mounting: SMD
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; PDIP6; Ch: 1; MOC3073M; 1kV/μs
Type of optocoupler: optotriac
Case: PDIP6
Max. off-state voltage: 3V
Output voltage: 800V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 4.17kV
Trigger current: 6mA
Slew rate: 1kV/μs
Manufacturer series: MOC3073M
Mounting: SMD
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MOC3073SVM |
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auf Bestellung 534 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
79+ | 1.39 EUR |
400+ | 1.20 EUR |
NCP1597AMNTWG |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4÷5.5V; DFN6; buck
Type of integrated circuit: PMIC
Input voltage: 4...5.5V
Output current: 2A
Frequency: 0.87...1.13MHz
Mounting: SMD
Case: DFN6
Topology: buck
Number of channels: 1
Operating temperature: -40...85°C
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4÷5.5V; DFN6; buck
Type of integrated circuit: PMIC
Input voltage: 4...5.5V
Output current: 2A
Frequency: 0.87...1.13MHz
Mounting: SMD
Case: DFN6
Topology: buck
Number of channels: 1
Operating temperature: -40...85°C
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GBPC3510W |
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Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
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74VHC132M |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 2
Supply voltage: 2...5.5V DC
Number of channels: quad; 4
Quiescent current: 20µA
Kind of package: tube
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: VHC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 2
Supply voltage: 2...5.5V DC
Number of channels: quad; 4
Quiescent current: 20µA
Kind of package: tube
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: VHC
Mounting: SMD
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74VHC132MX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 2
Supply voltage: 2...5.5V DC
Number of channels: quad; 4
Quiescent current: 20µA
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: VHC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 2
Supply voltage: 2...5.5V DC
Number of channels: quad; 4
Quiescent current: 20µA
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: VHC
Mounting: SMD
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MC74VHC132DG |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: tube
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Family: VHC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: tube
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Family: VHC
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MC74VHC132DR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS; SMD; SOIC14
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: VHC
Manufacturer series: VHC
Kind of integrated circuit: Schmitt trigger
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS; SMD; SOIC14
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: VHC
Manufacturer series: VHC
Kind of integrated circuit: Schmitt trigger
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MC74VHC132DTR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; 20uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Family: VHC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; 20uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Family: VHC
Produkt ist nicht verfügbar
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