| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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NCV7342D10R2G | ONSEMI |
 Category: Interfaces others - integrated circuitsDescription: IC: CAN transceiver; 4.5÷5.5VDC; CAN; SMD; SO8; Ch: 1; reel,tape Interface: CAN Supply voltage: 4.5...5.5V DC Mounting: SMD Type of integrated circuit: CAN transceiver Operating temperature: -40...125°C Application: automotive industry Kind of package: reel; tape Case: SO8 Number of channels: 1 |
auf Bestellung 2515 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MC33072DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO8 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
auf Bestellung 1026 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MC33072ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO8 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 5mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
auf Bestellung 1956 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MC33202DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 2.2MHz; Ch: 2; ±900mVDC÷6VDC,1.8÷12VDC Mounting: SMT Operating temperature: -40...105°C Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC Kind of package: reel; tape Case: SO8 Number of channels: dual; 2 Bandwidth: 2.2MHz Input offset voltage: 8mV Slew rate: 1V/μs Type of integrated circuit: operational amplifier Integrated circuit features: rail-to-rail |
auf Bestellung 2918 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NC7WZ16P6X | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 10uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Mounting: SMD Case: SC70-6 Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 1.65...5.5V DC Quiescent current: 10µA Technology: CMOS |
auf Bestellung 7270 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NC7WV16P6X | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 0.9uA Mounting: SMD Supply voltage: 0.9...3.6V DC Type of integrated circuit: digital Operating temperature: -40...85°C Technology: CMOS Quiescent current: 0.9µA Kind of package: reel; tape Case: SC70-6 Kind of integrated circuit: buffer; non-inverting Number of channels: 2 |
auf Bestellung 1086 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MUR820G | ONSEMI |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 8A; Ifsm: 100A; TO220AC; tube; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 100A Case: TO220AC Kind of package: tube Max. forward voltage: 0.975V Max. load current: 16A Heatsink thickness: max. 1.4mm Reverse recovery time: 35ns |
auf Bestellung 306 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FSA4159P6X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; SPDT; Ch: 1; Outputs: 2; SC70-6,SC88,SOT363; IN: 1 Mounting: SMD Supply voltage: 1.65...5.5V DC Type of integrated circuit: analog switch Operating temperature: -40...85°C Resistance: 3.5Ω Number of inputs: 1 Output configuration: SPDT Case: SC70-6; SC88; SOT363 Number of outputs: 2 Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SZBZX84C2V4ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 2.4V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 2.4V Mounting: SMD Tolerance: ±8% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84CxxET1G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SZBZX84C2V4LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 2.4V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 2.4V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84C Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 42000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MC74HCT365ADR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; SOIC16; HCT Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; hex Number of channels: 6 Technology: CMOS; TTL Mounting: SMD Case: SOIC16 Kind of output: 3-state Family: HCT Supply voltage: 4.5...5.5V DC Manufacturer series: HCT Operating temperature: -55...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MC74HCT365ADTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; TSSOP16; HCT Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; hex Number of channels: 6 Technology: CMOS; TTL Mounting: SMD Case: TSSOP16 Kind of output: 3-state Family: HCT Supply voltage: 4.5...5.5V DC Manufacturer series: HCT Operating temperature: -55...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FDI045N10A-F102 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 263W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 164A Power dissipation: 263W Case: I2PAK Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 656A Gate charge: 54nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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FDP045N10A-F102 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 263W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 164A Pulsed drain current: 656A Power dissipation: 263W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FDPF045N10A | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 67A; Idm: 268A; 43W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 67A Power dissipation: 43W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 268A Gate charge: 57nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SB10-05P-TD-E | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOT89; SMD; 50V; 1A; reel,tape Mounting: SMD Case: SOT89 Max. forward voltage: 0.55V Max. off-state voltage: 50V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward impulse current: 10A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FAN3224TM1X-F085 | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; -5÷5A Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8 Output current: -5...5A Number of channels: 2 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 12ns Pulse fall time: 9ns Application: automotive industry Kind of package: reel; tape Kind of output: non-inverting |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FAN3224TMPX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; WDFN8 Mounting: SMD Supply voltage: 4.5...18V DC Output current: -5...5A Type of integrated circuit: driver Kind of output: non-inverting Operating temperature: -40...125°C Technology: MillerDrive™ Pulse fall time: 9ns Kind of package: reel; tape Case: WDFN8 Kind of integrated circuit: low-side; MOSFET gate driver Number of channels: 2 Impulse rise time: 12ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FAN3224TUM1X-F085 | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8-EP Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8-EP Output current: -5...5A Number of channels: 2 Supply voltage: 9...18V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 12ns Pulse fall time: 9ns Application: automotive industry Kind of package: reel; tape Kind of output: non-inverting |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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FAN3224TUMX-F085 | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; -5÷5A Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8 Output current: -5...5A Number of channels: 2 Supply voltage: 9...18V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 12ns Pulse fall time: 9ns Application: automotive industry Kind of package: reel; tape Kind of output: non-inverting |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| LM2575D2T-5R4G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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1N4934G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; CASE59-10,DO41; bulk Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: CASE59-10; DO41 Kind of package: bulk Max. forward voltage: 1.2V Reverse recovery time: 200ns Features of semiconductor devices: fast switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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1N4934RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; DO41; reel,tape; 300ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: DO41 Kind of package: reel; tape Reverse recovery time: 300ns Features of semiconductor devices: fast switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMBZ18VALT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 18V; 1.6A; 40W; double,common anode; ESD; SOT23 Type of diode: TVS array Breakdown voltage: 18V Max. forward impulse current: 1.6A Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Version: ESD Mounting: SMD Case: SOT23 Max. off-state voltage: 14.5V Leakage current: 50nA Number of channels: 2 Tolerance: ±5% Kind of package: reel; tape |
auf Bestellung 32900 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SZMMBZ18VALT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 18V; 1.6A; 40W; double,common anode; SOT23; Ch: 2 Type of diode: TVS array Breakdown voltage: 18V Max. forward impulse current: 1.6A Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 14.5V Number of channels: 2 Tolerance: ±5% Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| HUF76429S3ST | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 110W; TO263AB Mounting: SMD Power dissipation: 110W Gate charge: 38nC Polarisation: unipolar Drain current: 44A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±16V Case: TO263AB On-state resistance: 25mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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MOCD223M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8 Mounting: SMD Case: SO8 Number of channels: 2 Collector-emitter voltage: 30V CTR@If: 500-1000%@1mA Kind of output: transistor Insulation voltage: 2.5kV Type of optocoupler: optocoupler Turn-on time: 8µs Turn-off time: 55µs |
auf Bestellung 1275 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NXH020F120MNF1PG | ONSEMI |
Category: Transistor modules Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 51A Case: PIM22 Topology: H-bridge Electrical mounting: Press-in PCB On-state resistance: 31mΩ Pulsed drain current: 102A Power dissipation: 211W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 28 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NXH020F120MNF1PTG | ONSEMI |
Category: Transistor modules Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 51A Case: PIM22 Topology: H-bridge Electrical mounting: Press-in PCB On-state resistance: 31mΩ Pulsed drain current: 102A Power dissipation: 211W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 28 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NXH020P120MNF1PG | ONSEMI |
Category: Transistor modules Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 51A Case: PIM18 Topology: MOSFET half-bridge Electrical mounting: Press-in PCB On-state resistance: 31mΩ Pulsed drain current: 102A Power dissipation: 211W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 28 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NXH020P120MNF1PTG | ONSEMI |
Category: Transistor modules Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 51A Case: PIM18 Topology: MOSFET half-bridge Electrical mounting: Press-in PCB On-state resistance: 31mΩ Pulsed drain current: 102A Power dissipation: 211W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 28 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NCV6356QMTWTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; SMD; reel,tape; automotive industry Mounting: SMD Type of integrated circuit: PMIC Application: automotive industry Kind of package: reel; tape Kind of integrated circuit: DC/DC converter |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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MC14049UBDR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,hex,inverter; Ch: 6; IN: 1; CMOS; SMD; SOIC16 Type of integrated circuit: digital Kind of integrated circuit: buffer; hex; inverter Number of channels: 6 Technology: CMOS Mounting: SMD Case: SOIC16 Kind of package: reel; tape Supply voltage: 3...18V DC Operating temperature: -55...125°C Number of inputs: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MMBTA28 | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 80V; 0.8A; 0.35W Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 0.8A Power dissipation: 0.35W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 125MHz |
auf Bestellung 2945 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DTA114YET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Current gain: 80...140 |
auf Bestellung 6601 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DTA114YM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 8000pcs. Current gain: 80...140 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMUN2114LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Current gain: 80...140 |
auf Bestellung 1712 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MMUN2114LT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Current gain: 80...140 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SMMUN2114LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMUN2112LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Collector-emitter voltage: 50V Base resistor: 22kΩ Power dissipation: 0.246W Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP Kind of package: reel; tape Base-emitter resistor: 22kΩ Case: SOT23; TO236AB Collector current: 0.1A Mounting: SMD |
auf Bestellung 3345 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NSVMMUN2112LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.4W Case: SOT23; TO236AB Current gain: 60...100 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Application: automotive industry Base-emitter resistor: 22kΩ Manufacturer standard package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMUN2113LT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Collector current: 0.1A Mounting: SMD Collector-emitter voltage: 50V Base resistor: 47kΩ Power dissipation: 0.246W Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP Current gain: 80...140 Kind of package: reel; tape Base-emitter resistor: 47kΩ Case: SOT23; TO236AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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NTA4153NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.915A; 0.3W; SC75; ESD Power dissipation: 0.3W Gate charge: 1.82nC Polarisation: unipolar Version: ESD Drain current: 0.915A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±6V Kind of package: reel; tape Case: SC75 On-state resistance: 0.95Ω Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| RSL10-SENSE-DB-GEVK | ONSEMI |
Category: Development kits - others Description: Dev.kit: evaluation Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10 Programmers and development kits features: Bluetooth board Type of development kit: evaluation |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| RSL10-SENSE-GEVK | ONSEMI |
Category: Development kits - others Description: Dev.kit: evaluation Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10 Programmers and development kits features: Bluetooth board Type of development kit: evaluation |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NCP186BMX180TAG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1.4A; XDFN8; SMD Manufacturer series: NCP186x Tolerance: ±1% Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Input voltage: 1.8...5.5V Output current: 1.4A Type of integrated circuit: voltage regulator Voltage drop: 0.285V Operating temperature: -40...125°C Output voltage: 1.8V Kind of package: reel; tape Case: XDFN8 Number of channels: 2 |
Produkt ist nicht verfügbar |
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| NCP176BMX180TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 500mA; XDFN6; SMD Manufacturer series: NCP176 Tolerance: ±1.5% Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Input voltage: 1.4...5.5V Output current: 0.5A Type of integrated circuit: voltage regulator Voltage drop: 0.275V Operating temperature: -40...85°C Output voltage: 1.8V Case: XDFN6 Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NCV8720BMT180TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.35A; WDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.8V Output current: 0.35A Case: WDFN6 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
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| NCV8570BMN180R2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; DFN6; SMD Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Output current: 0.2A Type of integrated circuit: voltage regulator Application: automotive industry Output voltage: 1.8V Kind of package: reel; tape Case: DFN6 Number of channels: 1 |
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| NCV8720BMTW180TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.35A; WDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.8V Output current: 0.35A Case: WDFN6 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
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 |
FODM124 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; CTR@If: 100-1200%@1mA Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor CTR@If: 100-1200%@1mA Case: Mini-flat 4pin Turn-on time: 3µs Turn-off time: 3µs |
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 |
FODM124R2 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 100-1200%@1mA Collector-emitter voltage: 80V Case: Mini-flat 4pin Manufacturer series: FODM124 Turn-on time: 3µs Turn-off time: 3µs |
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| FODM124R2V | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 100-1200%@1mA Collector-emitter voltage: 80V Case: MFP4 Max. off-state voltage: 6V Manufacturer series: FODM124 |
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| MC33202DMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 2.2MHz; Ch: 2; ±900mVDC÷6VDC,1.8÷12VDC Mounting: SMT Operating temperature: -40...105°C Input bias current: 0.25µA Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC Kind of package: reel; tape Input offset current: 100nA Case: Micro8 Number of channels: dual; 2 Bandwidth: 2.2MHz Input offset voltage: 11mV Slew rate: 1V/μs Type of integrated circuit: operational amplifier Integrated circuit features: low voltage; rail-to-rail |
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 |
MC33202VDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 2.2MHz; Ch: 2; ±900mVDC÷6VDC,1.8÷12VDC Mounting: SMT Operating temperature: -55...125°C Input bias current: 0.5µA Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC Kind of package: reel; tape Input offset current: 200nA Case: SO8 Number of channels: dual; 2 Bandwidth: 2.2MHz Input offset voltage: 14mV Slew rate: 1V/μs Type of integrated circuit: operational amplifier Integrated circuit features: low voltage; rail-to-rail |
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NTD3055L104T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Power dissipation: 48W Case: DPAK Gate-source voltage: ±15V On-state resistance: 0.104Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 45A |
auf Bestellung 107 Stücke: Lieferzeit 14-21 Tag (e) |
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 |
NVF3055L108T1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.4A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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NTD3055L170T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 28.5W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Power dissipation: 28.5W Case: DPAK Gate-source voltage: ±15V On-state resistance: 0.17Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
STDV3055L104T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Power dissipation: 48W Case: DPAK Gate-source voltage: ±15V On-state resistance: 0.104Ω Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 45A |
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 |
FDD390N15A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 26A; Idm: 104A; 63W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 26A Pulsed drain current: 104A Power dissipation: 63W Case: DPAK Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 14.3nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 488 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCV7342D10R2G |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; CAN; SMD; SO8; Ch: 1; reel,tape
Interface: CAN
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Type of integrated circuit: CAN transceiver
Operating temperature: -40...125°C
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Number of channels: 1
Category: Interfaces others - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; CAN; SMD; SO8; Ch: 1; reel,tape
Interface: CAN
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Type of integrated circuit: CAN transceiver
Operating temperature: -40...125°C
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Number of channels: 1
auf Bestellung 2515 Stücke:
Lieferzeit 14-21 Tag (e)
| MC33072DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
auf Bestellung 1026 Stücke:
Lieferzeit 14-21 Tag (e)
| MC33072ADR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
auf Bestellung 1956 Stücke:
Lieferzeit 14-21 Tag (e)
| MC33202DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 2; ±900mVDC÷6VDC,1.8÷12VDC
Mounting: SMT
Operating temperature: -40...105°C
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Kind of package: reel; tape
Case: SO8
Number of channels: dual; 2
Bandwidth: 2.2MHz
Input offset voltage: 8mV
Slew rate: 1V/μs
Type of integrated circuit: operational amplifier
Integrated circuit features: rail-to-rail
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 2; ±900mVDC÷6VDC,1.8÷12VDC
Mounting: SMT
Operating temperature: -40...105°C
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Kind of package: reel; tape
Case: SO8
Number of channels: dual; 2
Bandwidth: 2.2MHz
Input offset voltage: 8mV
Slew rate: 1V/μs
Type of integrated circuit: operational amplifier
Integrated circuit features: rail-to-rail
auf Bestellung 2918 Stücke:
Lieferzeit 14-21 Tag (e)
| NC7WZ16P6X |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: SC70-6
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 10µA
Technology: CMOS
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: SC70-6
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 10µA
Technology: CMOS
auf Bestellung 7270 Stücke:
Lieferzeit 14-21 Tag (e)
| NC7WV16P6X |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 0.9uA
Mounting: SMD
Supply voltage: 0.9...3.6V DC
Type of integrated circuit: digital
Operating temperature: -40...85°C
Technology: CMOS
Quiescent current: 0.9µA
Kind of package: reel; tape
Case: SC70-6
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 0.9uA
Mounting: SMD
Supply voltage: 0.9...3.6V DC
Type of integrated circuit: digital
Operating temperature: -40...85°C
Technology: CMOS
Quiescent current: 0.9µA
Kind of package: reel; tape
Case: SC70-6
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
auf Bestellung 1086 Stücke:
Lieferzeit 14-21 Tag (e)
| MUR820G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; Ifsm: 100A; TO220AC; tube; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 0.975V
Max. load current: 16A
Heatsink thickness: max. 1.4mm
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; Ifsm: 100A; TO220AC; tube; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 0.975V
Max. load current: 16A
Heatsink thickness: max. 1.4mm
Reverse recovery time: 35ns
auf Bestellung 306 Stücke:
Lieferzeit 14-21 Tag (e)
| FSA4159P6X |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; SPDT; Ch: 1; Outputs: 2; SC70-6,SC88,SOT363; IN: 1
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: analog switch
Operating temperature: -40...85°C
Resistance: 3.5Ω
Number of inputs: 1
Output configuration: SPDT
Case: SC70-6; SC88; SOT363
Number of outputs: 2
Number of channels: 1
Category: Analog multiplexers and switches
Description: IC: analog switch; SPDT; Ch: 1; Outputs: 2; SC70-6,SC88,SOT363; IN: 1
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: analog switch
Operating temperature: -40...85°C
Resistance: 3.5Ω
Number of inputs: 1
Output configuration: SPDT
Case: SC70-6; SC88; SOT363
Number of outputs: 2
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| SZBZX84C2V4ET1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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| SZBZX84C2V4LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 42000 Stücke
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| MC74HCT365ADR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; SOIC16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Kind of output: 3-state
Family: HCT
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; SOIC16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Kind of output: 3-state
Family: HCT
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| MC74HCT365ADTR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; TSSOP16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Kind of output: 3-state
Family: HCT
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; TSSOP16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Kind of output: 3-state
Family: HCT
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| FDI045N10A-F102 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 263W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 164A
Power dissipation: 263W
Case: I2PAK
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 656A
Gate charge: 54nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 263W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 164A
Power dissipation: 263W
Case: I2PAK
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 656A
Gate charge: 54nC
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FDP045N10A-F102 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 263W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 164A
Pulsed drain current: 656A
Power dissipation: 263W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 263W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 164A
Pulsed drain current: 656A
Power dissipation: 263W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| FDPF045N10A |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; Idm: 268A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 67A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 268A
Gate charge: 57nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; Idm: 268A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 67A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 268A
Gate charge: 57nC
Produkt ist nicht verfügbar
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| SB10-05P-TD-E |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT89; SMD; 50V; 1A; reel,tape
Mounting: SMD
Case: SOT89
Max. forward voltage: 0.55V
Max. off-state voltage: 50V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT89; SMD; 50V; 1A; reel,tape
Mounting: SMD
Case: SOT89
Max. forward voltage: 0.55V
Max. off-state voltage: 50V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 10A
Produkt ist nicht verfügbar
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| FAN3224TM1X-F085 |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; -5÷5A
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 12ns
Pulse fall time: 9ns
Application: automotive industry
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; -5÷5A
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 12ns
Pulse fall time: 9ns
Application: automotive industry
Kind of package: reel; tape
Kind of output: non-inverting
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN3224TMPX |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; WDFN8
Mounting: SMD
Supply voltage: 4.5...18V DC
Output current: -5...5A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Technology: MillerDrive™
Pulse fall time: 9ns
Kind of package: reel; tape
Case: WDFN8
Kind of integrated circuit: low-side; MOSFET gate driver
Number of channels: 2
Impulse rise time: 12ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; WDFN8
Mounting: SMD
Supply voltage: 4.5...18V DC
Output current: -5...5A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Technology: MillerDrive™
Pulse fall time: 9ns
Kind of package: reel; tape
Case: WDFN8
Kind of integrated circuit: low-side; MOSFET gate driver
Number of channels: 2
Impulse rise time: 12ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FAN3224TUM1X-F085 |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Supply voltage: 9...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 12ns
Pulse fall time: 9ns
Application: automotive industry
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Supply voltage: 9...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 12ns
Pulse fall time: 9ns
Application: automotive industry
Kind of package: reel; tape
Kind of output: non-inverting
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN3224TUMX-F085 |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; -5÷5A
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -5...5A
Number of channels: 2
Supply voltage: 9...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 12ns
Pulse fall time: 9ns
Application: automotive industry
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; -5÷5A
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -5...5A
Number of channels: 2
Supply voltage: 9...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 12ns
Pulse fall time: 9ns
Application: automotive industry
Kind of package: reel; tape
Kind of output: non-inverting
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM2575D2T-5R4G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4934G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; CASE59-10,DO41; bulk
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Kind of package: bulk
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; CASE59-10,DO41; bulk
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Kind of package: bulk
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4934RLG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; DO41; reel,tape; 300ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Kind of package: reel; tape
Reverse recovery time: 300ns
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; DO41; reel,tape; 300ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Kind of package: reel; tape
Reverse recovery time: 300ns
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBZ18VALT1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 18V; 1.6A; 40W; double,common anode; ESD; SOT23
Type of diode: TVS array
Breakdown voltage: 18V
Max. forward impulse current: 1.6A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 14.5V
Leakage current: 50nA
Number of channels: 2
Tolerance: ±5%
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 18V; 1.6A; 40W; double,common anode; ESD; SOT23
Type of diode: TVS array
Breakdown voltage: 18V
Max. forward impulse current: 1.6A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 14.5V
Leakage current: 50nA
Number of channels: 2
Tolerance: ±5%
Kind of package: reel; tape
auf Bestellung 32900 Stücke:
Lieferzeit 14-21 Tag (e)
| SZMMBZ18VALT1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 18V; 1.6A; 40W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 18V
Max. forward impulse current: 1.6A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 14.5V
Number of channels: 2
Tolerance: ±5%
Kind of package: reel; tape
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 18V; 1.6A; 40W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 18V
Max. forward impulse current: 1.6A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 14.5V
Number of channels: 2
Tolerance: ±5%
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HUF76429S3ST |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 110W; TO263AB
Mounting: SMD
Power dissipation: 110W
Gate charge: 38nC
Polarisation: unipolar
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
Case: TO263AB
On-state resistance: 25mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 110W; TO263AB
Mounting: SMD
Power dissipation: 110W
Gate charge: 38nC
Polarisation: unipolar
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
Case: TO263AB
On-state resistance: 25mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| MOCD223M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Mounting: SMD
Case: SO8
Number of channels: 2
Collector-emitter voltage: 30V
CTR@If: 500-1000%@1mA
Kind of output: transistor
Insulation voltage: 2.5kV
Type of optocoupler: optocoupler
Turn-on time: 8µs
Turn-off time: 55µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Mounting: SMD
Case: SO8
Number of channels: 2
Collector-emitter voltage: 30V
CTR@If: 500-1000%@1mA
Kind of output: transistor
Insulation voltage: 2.5kV
Type of optocoupler: optocoupler
Turn-on time: 8µs
Turn-off time: 55µs
auf Bestellung 1275 Stücke:
Lieferzeit 14-21 Tag (e)
| NXH020F120MNF1PG |
|
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 28 Stücke
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Stück im Wert von UAH
| NXH020F120MNF1PTG |
|
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NXH020P120MNF1PG |
|
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 28 Stücke
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Stück im Wert von UAH
| NXH020P120MNF1PTG |
|
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCV6356QMTWTXG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape; automotive industry
Mounting: SMD
Type of integrated circuit: PMIC
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape; automotive industry
Mounting: SMD
Type of integrated circuit: PMIC
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14049UBDR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex,inverter; Ch: 6; IN: 1; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex; inverter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SOIC16
Kind of package: reel; tape
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Number of inputs: 1
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex,inverter; Ch: 6; IN: 1; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex; inverter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SOIC16
Kind of package: reel; tape
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Number of inputs: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMBTA28 |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 0.8A; 0.35W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 0.8A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 0.8A; 0.35W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 0.8A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
auf Bestellung 2945 Stücke:
Lieferzeit 14-21 Tag (e)
| DTA114YET1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
auf Bestellung 6601 Stücke:
Lieferzeit 14-21 Tag (e)
| DTA114YM3T5G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Current gain: 80...140
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Current gain: 80...140
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMUN2114LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
auf Bestellung 1712 Stücke:
Lieferzeit 14-21 Tag (e)
| MMUN2114LT3G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMMUN2114LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMUN2112LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Power dissipation: 0.246W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Kind of package: reel; tape
Base-emitter resistor: 22kΩ
Case: SOT23; TO236AB
Collector current: 0.1A
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Power dissipation: 0.246W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Kind of package: reel; tape
Base-emitter resistor: 22kΩ
Case: SOT23; TO236AB
Collector current: 0.1A
Mounting: SMD
auf Bestellung 3345 Stücke:
Lieferzeit 14-21 Tag (e)
| NSVMMUN2112LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SOT23; TO236AB
Current gain: 60...100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SOT23; TO236AB
Current gain: 60...100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Produkt ist nicht verfügbar
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| MMUN2113LT3G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Power dissipation: 0.246W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Current gain: 80...140
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SOT23; TO236AB
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Power dissipation: 0.246W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Current gain: 80...140
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SOT23; TO236AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| NTA4153NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.915A; 0.3W; SC75; ESD
Power dissipation: 0.3W
Gate charge: 1.82nC
Polarisation: unipolar
Version: ESD
Drain current: 0.915A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±6V
Kind of package: reel; tape
Case: SC75
On-state resistance: 0.95Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.915A; 0.3W; SC75; ESD
Power dissipation: 0.3W
Gate charge: 1.82nC
Polarisation: unipolar
Version: ESD
Drain current: 0.915A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±6V
Kind of package: reel; tape
Case: SC75
On-state resistance: 0.95Ω
Mounting: SMD
Produkt ist nicht verfügbar
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| RSL10-SENSE-DB-GEVK |
|
Hersteller: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Programmers and development kits features: Bluetooth board
Type of development kit: evaluation
Category: Development kits - others
Description: Dev.kit: evaluation
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Programmers and development kits features: Bluetooth board
Type of development kit: evaluation
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| RSL10-SENSE-GEVK |
|
Hersteller: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Programmers and development kits features: Bluetooth board
Type of development kit: evaluation
Category: Development kits - others
Description: Dev.kit: evaluation
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Programmers and development kits features: Bluetooth board
Type of development kit: evaluation
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP186BMX180TAG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1.4A; XDFN8; SMD
Manufacturer series: NCP186x
Tolerance: ±1%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 1.8...5.5V
Output current: 1.4A
Type of integrated circuit: voltage regulator
Voltage drop: 0.285V
Operating temperature: -40...125°C
Output voltage: 1.8V
Kind of package: reel; tape
Case: XDFN8
Number of channels: 2
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1.4A; XDFN8; SMD
Manufacturer series: NCP186x
Tolerance: ±1%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 1.8...5.5V
Output current: 1.4A
Type of integrated circuit: voltage regulator
Voltage drop: 0.285V
Operating temperature: -40...125°C
Output voltage: 1.8V
Kind of package: reel; tape
Case: XDFN8
Number of channels: 2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP176BMX180TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 500mA; XDFN6; SMD
Manufacturer series: NCP176
Tolerance: ±1.5%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 1.4...5.5V
Output current: 0.5A
Type of integrated circuit: voltage regulator
Voltage drop: 0.275V
Operating temperature: -40...85°C
Output voltage: 1.8V
Case: XDFN6
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 500mA; XDFN6; SMD
Manufacturer series: NCP176
Tolerance: ±1.5%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 1.4...5.5V
Output current: 0.5A
Type of integrated circuit: voltage regulator
Voltage drop: 0.275V
Operating temperature: -40...85°C
Output voltage: 1.8V
Case: XDFN6
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| NCV8720BMT180TBG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.35A; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.35A
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.35A; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.35A
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV8570BMN180R2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; DFN6; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.2A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 1.8V
Kind of package: reel; tape
Case: DFN6
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; DFN6; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.2A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 1.8V
Kind of package: reel; tape
Case: DFN6
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NCV8720BMTW180TBG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.35A; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.35A
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.35A; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.35A
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FODM124 |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; CTR@If: 100-1200%@1mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
CTR@If: 100-1200%@1mA
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; CTR@If: 100-1200%@1mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
CTR@If: 100-1200%@1mA
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Produkt ist nicht verfügbar
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| FODM124R2 |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 100-1200%@1mA
Collector-emitter voltage: 80V
Case: Mini-flat 4pin
Manufacturer series: FODM124
Turn-on time: 3µs
Turn-off time: 3µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 100-1200%@1mA
Collector-emitter voltage: 80V
Case: Mini-flat 4pin
Manufacturer series: FODM124
Turn-on time: 3µs
Turn-off time: 3µs
auf Bestellung 2275 Stücke:
Lieferzeit 14-21 Tag (e)
| FODM124R2V |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 100-1200%@1mA
Collector-emitter voltage: 80V
Case: MFP4
Max. off-state voltage: 6V
Manufacturer series: FODM124
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 100-1200%@1mA
Collector-emitter voltage: 80V
Case: MFP4
Max. off-state voltage: 6V
Manufacturer series: FODM124
Produkt ist nicht verfügbar
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| MC33202DMR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 2; ±900mVDC÷6VDC,1.8÷12VDC
Mounting: SMT
Operating temperature: -40...105°C
Input bias current: 0.25µA
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Kind of package: reel; tape
Input offset current: 100nA
Case: Micro8
Number of channels: dual; 2
Bandwidth: 2.2MHz
Input offset voltage: 11mV
Slew rate: 1V/μs
Type of integrated circuit: operational amplifier
Integrated circuit features: low voltage; rail-to-rail
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 2; ±900mVDC÷6VDC,1.8÷12VDC
Mounting: SMT
Operating temperature: -40...105°C
Input bias current: 0.25µA
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Kind of package: reel; tape
Input offset current: 100nA
Case: Micro8
Number of channels: dual; 2
Bandwidth: 2.2MHz
Input offset voltage: 11mV
Slew rate: 1V/μs
Type of integrated circuit: operational amplifier
Integrated circuit features: low voltage; rail-to-rail
Produkt ist nicht verfügbar
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| MC33202VDR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 2; ±900mVDC÷6VDC,1.8÷12VDC
Mounting: SMT
Operating temperature: -55...125°C
Input bias current: 0.5µA
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Kind of package: reel; tape
Input offset current: 200nA
Case: SO8
Number of channels: dual; 2
Bandwidth: 2.2MHz
Input offset voltage: 14mV
Slew rate: 1V/μs
Type of integrated circuit: operational amplifier
Integrated circuit features: low voltage; rail-to-rail
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 2; ±900mVDC÷6VDC,1.8÷12VDC
Mounting: SMT
Operating temperature: -55...125°C
Input bias current: 0.5µA
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Kind of package: reel; tape
Input offset current: 200nA
Case: SO8
Number of channels: dual; 2
Bandwidth: 2.2MHz
Input offset voltage: 14mV
Slew rate: 1V/μs
Type of integrated circuit: operational amplifier
Integrated circuit features: low voltage; rail-to-rail
Produkt ist nicht verfügbar
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| NTD3055L104T4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
auf Bestellung 107 Stücke:
Lieferzeit 14-21 Tag (e)
| NVF3055L108T1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| NTD3055L170T4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 28.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 28.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.17Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 28.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 28.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.17Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STDV3055L104T4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
Produkt ist nicht verfügbar
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| FDD390N15A |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 26A; Idm: 104A; 63W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 26A
Pulsed drain current: 104A
Power dissipation: 63W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 14.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 26A; Idm: 104A; 63W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 26A
Pulsed drain current: 104A
Power dissipation: 63W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 14.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 488 Stücke:
Lieferzeit 14-21 Tag (e)