
auf Bestellung 2253 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 1.56 EUR |
10+ | 1.09 EUR |
100+ | 0.85 EUR |
500+ | 0.74 EUR |
1000+ | 0.67 EUR |
2500+ | 0.57 EUR |
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Technische Details STDV3055L104T4G onsemi
Description: MOSFET N-CH 60V 12A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 104mOhm @ 6A, 5V, Power Dissipation (Max): 1.5W (Ta), 48W (Tj), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: DPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote STDV3055L104T4G
Foto | Bezeichnung | Hersteller | Beschreibung |
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STDV3055L104T4G | Hersteller : ON Semiconductor |
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STDV3055L104T4G | Hersteller : ONSEMI |
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STDV3055L104T4G | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 104mOhm @ 6A, 5V Power Dissipation (Max): 1.5W (Ta), 48W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |