MMUN2113LT3G ON Semiconductor
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.022 EUR |
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Technische Details MMUN2113LT3G ON Semiconductor
Description: TRANS PREBIAS PNP 50V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Supplier Device Package: SOT-23-3 (TO-236), Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 246 mW, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
Weitere Produktangebote MMUN2113LT3G nach Preis ab 0.022 EUR bis 0.31 EUR
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MMUN2113LT3G | Hersteller : ON Semiconductor |
 Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SOT-23 T/R |
auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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MMUN2113LT3G | Hersteller : onsemi |
Description: TRANS PREBIAS PNP 50V SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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MMUN2113LT3G | Hersteller : onsemi |
Description: TRANS PREBIAS PNP 50V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 18720 Stücke: Lieferzeit 21-28 Tag (e) |
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MMUN2113LT3G | Hersteller : onsemi |
Digital Transistors SS BR XSTR PNP 50V |
auf Bestellung 29127 Stücke: Lieferzeit 14-28 Tag (e) |
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MMUN2113LT3G | Hersteller : ON Semiconductor |
Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SOT-23 T/R |
auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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MMUN2113LT3G | Hersteller : ON Semiconductor |
Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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MMUN2113LT3G | Hersteller : ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23 Current gain: 80...140 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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MMUN2113LT3G | Hersteller : ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23 Current gain: 80...140 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |