| Anzahl | Preis |
|---|---|
| 9+ | 0.33 EUR |
| 15+ | 0.19 EUR |
| 100+ | 0.11 EUR |
| 500+ | 0.083 EUR |
| 1000+ | 0.072 EUR |
| 3000+ | 0.063 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NSVMMUN2112LT1G onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3, Resistors Included: R1 and R2, Supplier Device Package: SOT-23-3 (TO-236), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Resistor - Emitter Base (R2): 22 kOhms, Resistor - Base (R1): 22 kOhms, Power - Max: 246 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA.
Weitere Produktangebote NSVMMUN2112LT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
NSVMMUN2112LT1G | onsemi |
 Description: TRANS PREBIAS PNP 50V SOT23-3Resistors Included: R1 and R2 Supplier Device Package: SOT-23-3 (TO-236) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Resistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 22 kOhms Power - Max: 246 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
NSVMMUN2112LT1G | onsemi |
Description: TRANS PREBIAS PNP 50V SOT23-3 Resistors Included: R1 and R2 Qualification: AEC-Q101 Grade: Automotive Resistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 22 kOhms Power - Max: 246 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-23-3 (TO-236) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NSVMMUN2112LT1G |
|
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Resistors Included: R1 and R2
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Description: TRANS PREBIAS PNP 50V SOT23-3
Resistors Included: R1 and R2
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NSVMMUN2112LT1G |
|
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS PNP 50V SOT23-3
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH