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NSVMMUN2112LT1G

NSVMMUN2112LT1G onsemi

dta124e-d.pdf
Hersteller: onsemi
Digital Transistors SS SOT23 BR XSTR PNP 50V
auf Bestellung 2622 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+0.39 EUR
15+0.23 EUR
100+0.13 EUR
500+0.099 EUR
1000+0.086 EUR
3000+0.075 EUR
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Technische Details NSVMMUN2112LT1G onsemi

Description: TRANS PREBIAS PNP 50V SOT23-3, Resistors Included: R1 and R2, Supplier Device Package: SOT-23-3 (TO-236), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Resistor - Emitter Base (R2): 22 kOhms, Resistor - Base (R1): 22 kOhms, Power - Max: 246 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA.

Weitere Produktangebote NSVMMUN2112LT1G

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
NSVMMUN2112LT1G NSVMMUN2112LT1G onsemi dta124e-d.pdf Description: TRANS PREBIAS PNP 50V SOT23-3
Resistors Included: R1 and R2
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMMUN2112LT1G NSVMMUN2112LT1G onsemi dta124e-d.pdf Description: TRANS PREBIAS PNP 50V SOT23-3
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVMMUN2112LT1G NSVMMUN2112LT1G ONSEMI dta124e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SOT23; TO236AB
Current gain: 60...100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Produkt ist nicht verfügbar
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NSVMMUN2112LT1G NSVMMUN2112LT1G ON Semiconductor dta124ed.pdf Trans Digital BJT PNP 50V 0.1A 400mW 3-Pin SOT-23 T/R Automotive AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMMUN2112LT1G dta124e-d.pdf
NSVMMUN2112LT1G
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Resistors Included: R1 and R2
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NSVMMUN2112LT1G dta124e-d.pdf
NSVMMUN2112LT1G
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVMMUN2112LT1G dta124e-d.pdf
NSVMMUN2112LT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SOT23; TO236AB
Current gain: 60...100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVMMUN2112LT1G dta124ed.pdf
NSVMMUN2112LT1G
Hersteller: ON Semiconductor
Trans Digital BJT PNP 50V 0.1A 400mW 3-Pin SOT-23 T/R Automotive AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH