DTA114YET1G ON Semiconductor
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 4425+ | 0.03 EUR |
| 7043+ | 0.02 EUR |
| 10639+ | 0.01 EUR |
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Technische Details DTA114YET1G ON Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SC75, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Supplier Device Package: SC-75, SOT-416, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms, Resistors Included: R1 and R2.
Weitere Produktangebote DTA114YET1G nach Preis ab 0.02 EUR bis 0.28 EUR
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DTA114YET1G | Hersteller : ON Semiconductor |
 Trans Digital BJT PNP 50V 0.1A 300mW 3-Pin SOT-416 T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA114YET1G | Hersteller : ON Semiconductor |
Trans Digital BJT PNP 50V 0.1A 300mW 3-Pin SOT-416 T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA114YET1G | Hersteller : ON Semiconductor |
Trans Digital BJT PNP 50V 0.1A 300mW 3-Pin SOT-416 T/R |
auf Bestellung 5506 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA114YET1G | Hersteller : ON Semiconductor |
Trans Digital BJT PNP 50V 0.1A 300mW 3-Pin SOT-416 T/R |
auf Bestellung 5506 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA114YET1G | Hersteller : ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ Mounting: SMD Case: SC75; SOT416 Kind of package: reel; tape Collector-emitter voltage: 50V Current gain: 80...140 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 47kΩ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7790 Stücke: Lieferzeit 7-14 Tag (e) |
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DTA114YET1G | Hersteller : ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ Mounting: SMD Case: SC75; SOT416 Kind of package: reel; tape Collector-emitter voltage: 50V Current gain: 80...140 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 7790 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA114YET1G | Hersteller : onsemi |
Digital Transistors 100mA 50V BRT PNP |
auf Bestellung 15780 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA114YET1G | Hersteller : onsemi |
Description: TRANS PREBIAS PNP 50V 0.1A SC75 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
auf Bestellung 2220 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA114YET1G | Hersteller : ON Semiconductor |
Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SOT-416 T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA114YET1G | Hersteller : ON Semiconductor |
Trans Digital BJT PNP 50V 0.1A 300mW 3-Pin SOT-416 T/R |
Produkt ist nicht verfügbar |
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DTA114YET1G | Hersteller : onsemi |
Description: TRANS PREBIAS PNP 50V 0.1A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |