Produkte > ONSEMI > NVMFS5C406NLT1G
NVMFS5C406NLT1G

NVMFS5C406NLT1G onsemi

nvmfs5c406nl-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 40V 53A/362A 5DFN
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 362A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 280µA
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.52 EUR
10+7.71 EUR
100+5.55 EUR
500+5.11 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NVMFS5C406NLT1G onsemi

Description: MOSFET N-CH 40V 53A/362A 5DFN, Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 2V @ 280µA, Power Dissipation (Max): 3.9W (Ta), 179W (Tc), Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 362A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Qualification: AEC-Q101, Grade: Automotive, Packaging: Tape & Reel (TR).

Weitere Produktangebote NVMFS5C406NLT1G

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
NVMFS5C406NLT1G NVMFS5C406NLT1G onsemi nvmfs5c406nl-d.pdf Description: MOSFET N-CH 40V 53A/362A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 280µA
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 362A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS5C406NLT1G NVMFS5C406NLT1G onsemi nvmfs5c406nl-d.pdf MOSFETs Single N-Chn Pwr Mosfet 40V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS5C406NLT1G ONSEMI nvmfs5c406nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 362A; Idm: 900A; 90W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 362A
Pulsed drain current: 900A
Power dissipation: 90W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 149nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS5C406NLT1G NVMFS5C406NLT1G ON Semiconductor nvmfs5c406nl-d.pdf Trans MOSFET N-CH 40V 53A Automotive AEC-Q101 5-Pin SO-FL EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS5C406NLT1G nvmfs5c406nl-d.pdf
NVMFS5C406NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 53A/362A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 280µA
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 362A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS5C406NLT1G nvmfs5c406nl-d.pdf
NVMFS5C406NLT1G
Hersteller: onsemi
MOSFETs Single N-Chn Pwr Mosfet 40V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS5C406NLT1G nvmfs5c406nl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 362A; Idm: 900A; 90W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 362A
Pulsed drain current: 900A
Power dissipation: 90W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 149nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS5C406NLT1G nvmfs5c406nl-d.pdf
NVMFS5C406NLT1G
Hersteller: ON Semiconductor
Trans MOSFET N-CH 40V 53A Automotive AEC-Q101 5-Pin SO-FL EP T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH