| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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DTA143ZET1G | ONSEMI |
 Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Current gain: 80...140 |
auf Bestellung 2910 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA143ZM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 8000pcs. Current gain: 80...140 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DTA143EET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Manufacturer standard package: 3000pcs. Current gain: 15...27 |
auf Bestellung 7982 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA143EM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Manufacturer standard package: 8000pcs. Current gain: 15...27 |
Produkt ist nicht verfügbar |
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| DTA143TET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Manufacturer standard package: 3000pcs. Current gain: 160...250 |
Produkt ist nicht verfügbar |
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DTA143TM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; SOT723; 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Manufacturer standard package: 8000pcs. |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MUR620CTG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 6A; Ifsm: 75A; TO220AB; tube; 35ns Mounting: THT Reverse recovery time: 35ns Max. forward impulse current: 75A Max. off-state voltage: 200V Load current: 6A Kind of package: tube Semiconductor structure: common cathode; double Case: TO220AB Type of diode: rectifying |
Produkt ist nicht verfügbar |
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FCB070N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 44A Power dissipation: 312W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTMFS010N10GTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 1247A; 75W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 83A Pulsed drain current: 1247A Power dissipation: 75W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 10.8mΩ Mounting: SMD Gate charge: 58.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NTTFS010N10MCLTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 250A; 52W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 250A Power dissipation: 52W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 10.6mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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NSS60600MZ4T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4 Mounting: SMD Collector-emitter voltage: 60V Power dissipation: 2W Polarisation: bipolar Type of transistor: PNP Current gain: 120...360 Kind of package: reel; tape Case: SOT223-4; TO261-4 Frequency: 100MHz Collector current: 6A |
auf Bestellung 797 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSS60601MZ4T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4 Mounting: SMD Collector-emitter voltage: 60V Power dissipation: 2W Polarisation: bipolar Type of transistor: NPN Current gain: 120...360 Kind of package: reel; tape Case: SOT223-4; TO261-4 Frequency: 100MHz Collector current: 6A |
auf Bestellung 985 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |
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MUR1100ERLG | ONSEMI |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; Ifsm: 35A; CASE59; reel,tape; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 35A Case: CASE59 Kind of package: reel; tape Reverse recovery time: 75ns |
auf Bestellung 52 Stücke: Lieferzeit 14-21 Tag (e) |
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MUR1100EG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 35A; DO41; bulk; 100ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 35A Case: DO41 Kind of package: bulk Reverse recovery time: 100ns |
Produkt ist nicht verfügbar |
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MUN2211T3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Current gain: 35...60 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SMUN2211T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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FGH50T65SQD-F155 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 134W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Gate charge: 99nC Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 200A |
auf Bestellung 298 Stücke: Lieferzeit 14-21 Tag (e) |
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NTMD6N02R2G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 35mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MMBZ20VALT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; ESD; SOT23 Max. forward impulse current: 1.4A Peak pulse power dissipation: 40W Version: ESD Max. off-state voltage: 17V Kind of package: reel; tape Semiconductor structure: common anode; double Leakage current: 50nA Case: SOT23 Type of diode: TVS array Number of channels: 2 Tolerance: ±5% Mounting: SMD Breakdown voltage: 20V |
auf Bestellung 873 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MMBZ20VAWT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SC70; Ch: 2 Max. forward impulse current: 1.4A Peak pulse power dissipation: 40W Max. off-state voltage: 17V Kind of package: reel; tape Semiconductor structure: common anode; double Case: SC70 Type of diode: TVS array Number of channels: 2 Tolerance: ±5% Mounting: SMD Breakdown voltage: 20V |
Produkt ist nicht verfügbar |
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SZMMBZ20VALT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; Ch: 2 Max. forward impulse current: 1.4A Peak pulse power dissipation: 40W Application: automotive industry Max. off-state voltage: 17V Kind of package: reel; tape Semiconductor structure: common anode; double Case: SOT23 Type of diode: TVS array Number of channels: 2 Tolerance: ±5% Mounting: SMD Breakdown voltage: 20V |
Produkt ist nicht verfügbar |
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| SZMMBZ20VAWT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SC70; Ch: 2 Max. forward impulse current: 1.4A Peak pulse power dissipation: 40W Application: automotive industry Max. off-state voltage: 17V Kind of package: reel; tape Semiconductor structure: common anode; double Case: SC70 Type of diode: TVS array Number of channels: 2 Tolerance: ±5% Mounting: SMD Breakdown voltage: 20V |
Produkt ist nicht verfügbar |
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| MOC3051SR2VM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 600V Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: SMD Manufacturer series: MOC305X Kind of package: reel; tape Conform to the norm: VDE Number of channels: 1 |
Produkt ist nicht verfügbar |
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| MOC3051SR2M | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 600V Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: SMD Manufacturer series: MOC305X Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
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MOC3051TVM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 600V Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT Manufacturer series: MOC305X Kind of package: tube Conform to the norm: VDE Number of channels: 1 |
Produkt ist nicht verfügbar |
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MOC3051VM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 600V Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT Manufacturer series: MOC305X Kind of package: tube Conform to the norm: VDE Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FQB33N10TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 23A Case: D2PAK Gate-source voltage: ±25V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 52mΩ Power dissipation: 127W Gate charge: 51nC Technology: QFET® |
Produkt ist nicht verfügbar |
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FQB33N10LTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 23A Case: D2PAK Gate-source voltage: ±20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 55mΩ Pulsed drain current: 132A Power dissipation: 127W Gate charge: 40nC Technology: QFET® |
Produkt ist nicht verfügbar |
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| FAN3852UC16X | ONSEMI |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; PDM; microphone preamplifier; 1.64÷3.63VDC Supply voltage: 1.64...3.63V DC Kind of package: reel; tape Case: WLCSP6 Interface: PDM Number of channels: 1 Mounting: SMD Type of integrated circuit: audio amplifier Operating temperature: -40...85°C Integrated circuit features: microphone preamplifier |
Produkt ist nicht verfügbar |
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ISL9V3040D3ST | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 17A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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ISL9V3040D3ST-F085C | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 17A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MC74ACT161DR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL Type of integrated circuit: digital Kind of integrated circuit: asynchronous reset; binary counter Number of channels: 1 Number of inputs: 9 Technology: TTL Manufacturer series: ACT Mounting: SMD Case: SOIC16 Family: ACT Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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NCP45524IMNTWG-H | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8 Mounting: SMD Supply voltage: 3...5.5V DC Active logical level: high Control voltage: 0.5...13.5V DC Output current: 6A Type of integrated circuit: power switch Kind of output: N-Channel Kind of package: reel; tape Case: DFN8 Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 31.7mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NCP45524IMNTWG-L | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8 Mounting: SMD Supply voltage: 3...5.5V DC Active logical level: low Control voltage: 0.5...13.5V DC Output current: 6A Type of integrated circuit: power switch Kind of output: N-Channel Kind of package: reel; tape Case: DFN8 Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 31.7mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MC33275ST-3.3T3G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: SOT223 Operating temperature: -40...125°C Kind of package: reel; tape Output current: 0.8A Voltage drop: 1.1V Output voltage: 3.3V Tolerance: ±1% Kind of voltage regulator: fixed; LDO; linear Input voltage: 0...20V Manufacturer series: MC33275 |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33275ST-5.0T3G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT223; SMD Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: SOT223 Kind of package: reel; tape Output current: 0.3A Output voltage: 5V Kind of voltage regulator: fixed; LDO; linear |
auf Bestellung 3568 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33275DT-3.3RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; DPAK; SMD Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: DPAK Kind of package: reel; tape Output current: 0.3A Output voltage: 3.3V Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
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MC33275D-3.0G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; tube Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: SO8 Kind of package: tube Output current: 0.3A Output voltage: 3V Kind of voltage regulator: fixed; LDO; linear |
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MC33275D-3.0R2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: SO8 Kind of package: reel; tape Output current: 0.3A Output voltage: 3V Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MC33275D-3.3R2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: SO8 Kind of package: reel; tape Output current: 0.3A Output voltage: 3.3V Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
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MC33275D-5.0R2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: SO8 Kind of package: reel; tape Output current: 0.3A Output voltage: 5V Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MC33275DT-5.0RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: DPAK Kind of package: reel; tape Output current: 0.3A Output voltage: 5V Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MC33275MN-3.0R2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; DFN8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: DFN8 Kind of package: reel; tape Output current: 0.3A Output voltage: 3V Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTBG160N120SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W Drain-source voltage: 1.2kV Drain current: 13.7A Case: D2PAK-7 Polarisation: unipolar On-state resistance: 0.365Ω Pulsed drain current: 78A Power dissipation: 68W Technology: SiC Gate-source voltage: -5...20V Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Gate charge: 33.8nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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NTHL160N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W Drain-source voltage: 1.2kV Drain current: 12A Case: TO247-3 Polarisation: unipolar On-state resistance: 0.16Ω Pulsed drain current: 69A Power dissipation: 59W Technology: SiC Gate-source voltage: -15...25V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Gate charge: 34nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NVBG160N120SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W Drain-source voltage: 1.2kV Drain current: 13.7A Case: D2PAK-7 Polarisation: unipolar On-state resistance: 0.365Ω Pulsed drain current: 78A Power dissipation: 68W Technology: SiC Gate-source voltage: -5...15V Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Gate charge: 33.8nC |
Produkt ist nicht verfügbar |
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| NVHL160N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W Drain-source voltage: 1.2kV Drain current: 12A Case: TO247-3 Polarisation: unipolar On-state resistance: 337mΩ Pulsed drain current: 69A Power dissipation: 59W Technology: SiC Gate-source voltage: -5...20V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Gate charge: 34nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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NTH4L160N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W Drain-source voltage: 1.2kV Drain current: 12.3A Case: TO247-4 Polarisation: unipolar On-state resistance: 224mΩ Pulsed drain current: 69A Power dissipation: 55.5W Technology: SiC Gate-source voltage: -15...25V Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Gate charge: 34nC |
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| NVH4L160N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W Drain-source voltage: 1.2kV Drain current: 12.3A Case: TO247-4 Polarisation: unipolar On-state resistance: 377mΩ Pulsed drain current: 69A Power dissipation: 55.5W Technology: SiC Gate-source voltage: -5...20V Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Gate charge: 34nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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TL431BVDR2G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.4% Mounting: SMD Case: SO8 Operating temperature: -40...125°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
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FOD8802A | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 75V; SO8 Case: SO8 Mounting: SMD Max. off-state voltage: 6V Turn-off time: 40µs Number of channels: 2 Manufacturer series: FOD8802 Collector-emitter voltage: 75V CTR@If: 35-230%@1mA Slew rate: 10kV/μs Kind of output: transistor Insulation voltage: 2.5kV Type of optocoupler: optocoupler Turn-on time: 6µs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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NTP055N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 132A; 305W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 47A Pulsed drain current: 132A Power dissipation: 305W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 55mΩ Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
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FAN7388MX | ONSEMI |
Category: Buffers, transceivers, drivers Description: Transistor: N-MOSFET; unipolar; SO20; 10÷20V Mounting: SMD Supply voltage: 10...20V Output current: 350...650mA Polarisation: unipolar Operating temperature: -40...150°C Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Case: SO20 |
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Im Einkaufswagen Stück im Wert von UAH |
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FGD3040G2-F085 | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level Application: ignition systems Mounting: SMD Collector-emitter voltage: 400V Power dissipation: 150W Gate charge: 21nC Version: ESD Features of semiconductor devices: logic level Type of transistor: IGBT Kind of package: reel; tape Case: DPAK Gate-emitter voltage: ±10V Collector current: 25.6A |
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FGD3040G2-F085C | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level Application: ignition systems Mounting: SMD Collector-emitter voltage: 400V Power dissipation: 150W Gate charge: 21nC Version: ESD Features of semiconductor devices: logic level Type of transistor: IGBT Kind of package: reel; tape Case: DPAK Gate-emitter voltage: ±10V Collector current: 25.6A |
Produkt ist nicht verfügbar |
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FGD3040G2-F085V | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level Application: ignition systems Mounting: SMD Collector-emitter voltage: 400V Power dissipation: 150W Gate charge: 21nC Version: ESD Features of semiconductor devices: logic level Type of transistor: IGBT Kind of package: reel; tape Case: DPAK Gate-emitter voltage: ±10V Collector current: 25.6A |
Produkt ist nicht verfügbar |
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1N5375BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 82V; CASE017AA; single diode; bulk; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 82V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: bulk Manufacturer series: 1N53xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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1N5375BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 82V; CASE017AA; single diode; reel,tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 82V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N53xxB |
Produkt ist nicht verfügbar |
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1N5342BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; reel,tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 6.8V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N53xxB |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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1N5342BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; bulk; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 6.8V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: bulk Manufacturer series: 1N53xxB |
auf Bestellung 1195 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTA143ZET1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
auf Bestellung 2910 Stücke:
Lieferzeit 14-21 Tag (e)
| DTA143ZM3T5G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Current gain: 80...140
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Current gain: 80...140
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTA143EET1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Manufacturer standard package: 3000pcs.
Current gain: 15...27
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Manufacturer standard package: 3000pcs.
Current gain: 15...27
auf Bestellung 7982 Stücke:
Lieferzeit 14-21 Tag (e)
| DTA143EM3T5G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Manufacturer standard package: 8000pcs.
Current gain: 15...27
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Manufacturer standard package: 8000pcs.
Current gain: 15...27
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTA143TET1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Manufacturer standard package: 3000pcs.
Current gain: 160...250
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Manufacturer standard package: 3000pcs.
Current gain: 160...250
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTA143TM3T5G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; SOT723; 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Manufacturer standard package: 8000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; SOT723; 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Manufacturer standard package: 8000pcs.
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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Stück im Wert von UAH
| MUR620CTG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 6A; Ifsm: 75A; TO220AB; tube; 35ns
Mounting: THT
Reverse recovery time: 35ns
Max. forward impulse current: 75A
Max. off-state voltage: 200V
Load current: 6A
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 6A; Ifsm: 75A; TO220AB; tube; 35ns
Mounting: THT
Reverse recovery time: 35ns
Max. forward impulse current: 75A
Max. off-state voltage: 200V
Load current: 6A
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCB070N65S3 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Power dissipation: 312W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Power dissipation: 312W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
| NTMFS010N10GTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 1247A; 75W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 83A
Pulsed drain current: 1247A
Power dissipation: 75W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 58.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 1247A; 75W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 83A
Pulsed drain current: 1247A
Power dissipation: 75W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 58.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| NTTFS010N10MCLTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 250A; 52W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 250A
Power dissipation: 52W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 250A; 52W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 250A
Power dissipation: 52W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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| NSS60600MZ4T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 120...360
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Frequency: 100MHz
Collector current: 6A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 120...360
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Frequency: 100MHz
Collector current: 6A
auf Bestellung 797 Stücke:
Lieferzeit 14-21 Tag (e)
| NSS60601MZ4T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 120...360
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Frequency: 100MHz
Collector current: 6A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 120...360
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Frequency: 100MHz
Collector current: 6A
auf Bestellung 985 Stücke:
Lieferzeit 14-21 Tag (e)
| MUR1100ERLG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 35A; CASE59; reel,tape; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 35A
Case: CASE59
Kind of package: reel; tape
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 35A; CASE59; reel,tape; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 35A
Case: CASE59
Kind of package: reel; tape
Reverse recovery time: 75ns
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
| MUR1100EG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 35A; DO41; bulk; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 35A
Case: DO41
Kind of package: bulk
Reverse recovery time: 100ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 35A; DO41; bulk; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 35A
Case: DO41
Kind of package: bulk
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MUN2211T3G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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Stück im Wert von UAH
| SMUN2211T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGH50T65SQD-F155 |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Gate charge: 99nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Gate charge: 99nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
| NTMD6N02R2G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| MMBZ20VALT1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; ESD; SOT23
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Version: ESD
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Leakage current: 50nA
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; ESD; SOT23
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Version: ESD
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Leakage current: 50nA
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
auf Bestellung 873 Stücke:
Lieferzeit 14-21 Tag (e)
| MMBZ20VAWT1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SC70; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC70
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SC70; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC70
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
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| SZMMBZ20VALT1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Application: automotive industry
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Application: automotive industry
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
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| SZMMBZ20VAWT1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SC70; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Application: automotive industry
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC70
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SC70; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Application: automotive industry
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC70
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
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| MOC3051SR2VM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Manufacturer series: MOC305X
Kind of package: reel; tape
Conform to the norm: VDE
Number of channels: 1
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Manufacturer series: MOC305X
Kind of package: reel; tape
Conform to the norm: VDE
Number of channels: 1
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Im Einkaufswagen
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| MOC3051SR2M |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Manufacturer series: MOC305X
Kind of package: reel; tape
Number of channels: 1
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Manufacturer series: MOC305X
Kind of package: reel; tape
Number of channels: 1
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| MOC3051TVM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Manufacturer series: MOC305X
Kind of package: tube
Conform to the norm: VDE
Number of channels: 1
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Manufacturer series: MOC305X
Kind of package: tube
Conform to the norm: VDE
Number of channels: 1
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Im Einkaufswagen
Stück im Wert von UAH
| MOC3051VM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Manufacturer series: MOC305X
Kind of package: tube
Conform to the norm: VDE
Number of channels: 1
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Manufacturer series: MOC305X
Kind of package: tube
Conform to the norm: VDE
Number of channels: 1
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Im Einkaufswagen
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| FQB33N10TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 52mΩ
Power dissipation: 127W
Gate charge: 51nC
Technology: QFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 52mΩ
Power dissipation: 127W
Gate charge: 51nC
Technology: QFET®
Produkt ist nicht verfügbar
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| FQB33N10LTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 55mΩ
Pulsed drain current: 132A
Power dissipation: 127W
Gate charge: 40nC
Technology: QFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 55mΩ
Pulsed drain current: 132A
Power dissipation: 127W
Gate charge: 40nC
Technology: QFET®
Produkt ist nicht verfügbar
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| FAN3852UC16X |
|
Hersteller: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; PDM; microphone preamplifier; 1.64÷3.63VDC
Supply voltage: 1.64...3.63V DC
Kind of package: reel; tape
Case: WLCSP6
Interface: PDM
Number of channels: 1
Mounting: SMD
Type of integrated circuit: audio amplifier
Operating temperature: -40...85°C
Integrated circuit features: microphone preamplifier
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; PDM; microphone preamplifier; 1.64÷3.63VDC
Supply voltage: 1.64...3.63V DC
Kind of package: reel; tape
Case: WLCSP6
Interface: PDM
Number of channels: 1
Mounting: SMD
Type of integrated circuit: audio amplifier
Operating temperature: -40...85°C
Integrated circuit features: microphone preamplifier
Produkt ist nicht verfügbar
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| ISL9V3040D3ST |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| ISL9V3040D3ST-F085C |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Produkt ist nicht verfügbar
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| MC74ACT161DR2G |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Kind of integrated circuit: asynchronous reset; binary counter
Number of channels: 1
Number of inputs: 9
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Category: Counters/dividers
Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Kind of integrated circuit: asynchronous reset; binary counter
Number of channels: 1
Number of inputs: 9
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| NCP45524IMNTWG-H |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: high
Control voltage: 0.5...13.5V DC
Output current: 6A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 31.7mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: high
Control voltage: 0.5...13.5V DC
Output current: 6A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 31.7mΩ
Produkt ist nicht verfügbar
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| NCP45524IMNTWG-L |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: low
Control voltage: 0.5...13.5V DC
Output current: 6A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 31.7mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: low
Control voltage: 0.5...13.5V DC
Output current: 6A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 31.7mΩ
Produkt ist nicht verfügbar
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| MC33275ST-3.3T3G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SOT223
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: 0.8A
Voltage drop: 1.1V
Output voltage: 3.3V
Tolerance: ±1%
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 0...20V
Manufacturer series: MC33275
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SOT223
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: 0.8A
Voltage drop: 1.1V
Output voltage: 3.3V
Tolerance: ±1%
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 0...20V
Manufacturer series: MC33275
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| MC33275ST-5.0T3G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT223; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Output current: 0.3A
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT223; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Output current: 0.3A
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
auf Bestellung 3568 Stücke:
Lieferzeit 14-21 Tag (e)
| MC33275DT-3.3RKG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; DPAK; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Output current: 0.3A
Output voltage: 3.3V
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; DPAK; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Output current: 0.3A
Output voltage: 3.3V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33275D-3.0G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; tube
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: tube
Output current: 0.3A
Output voltage: 3V
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; tube
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: tube
Output current: 0.3A
Output voltage: 3V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33275D-3.0R2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Output current: 0.3A
Output voltage: 3V
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Output current: 0.3A
Output voltage: 3V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33275D-3.3R2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Output current: 0.3A
Output voltage: 3.3V
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Output current: 0.3A
Output voltage: 3.3V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MC33275D-5.0R2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Output current: 0.3A
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Output current: 0.3A
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33275DT-5.0RKG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Output current: 0.3A
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Output current: 0.3A
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33275MN-3.0R2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; DFN8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Output current: 0.3A
Output voltage: 3V
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; DFN8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Output current: 0.3A
Output voltage: 3V
Kind of voltage regulator: fixed; LDO; linear
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| NTBG160N120SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Drain-source voltage: 1.2kV
Drain current: 13.7A
Case: D2PAK-7
Polarisation: unipolar
On-state resistance: 0.365Ω
Pulsed drain current: 78A
Power dissipation: 68W
Technology: SiC
Gate-source voltage: -5...20V
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Gate charge: 33.8nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Drain-source voltage: 1.2kV
Drain current: 13.7A
Case: D2PAK-7
Polarisation: unipolar
On-state resistance: 0.365Ω
Pulsed drain current: 78A
Power dissipation: 68W
Technology: SiC
Gate-source voltage: -5...20V
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Gate charge: 33.8nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| NTHL160N120SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Drain-source voltage: 1.2kV
Drain current: 12A
Case: TO247-3
Polarisation: unipolar
On-state resistance: 0.16Ω
Pulsed drain current: 69A
Power dissipation: 59W
Technology: SiC
Gate-source voltage: -15...25V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Gate charge: 34nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Drain-source voltage: 1.2kV
Drain current: 12A
Case: TO247-3
Polarisation: unipolar
On-state resistance: 0.16Ω
Pulsed drain current: 69A
Power dissipation: 59W
Technology: SiC
Gate-source voltage: -15...25V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Gate charge: 34nC
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| NVBG160N120SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Drain-source voltage: 1.2kV
Drain current: 13.7A
Case: D2PAK-7
Polarisation: unipolar
On-state resistance: 0.365Ω
Pulsed drain current: 78A
Power dissipation: 68W
Technology: SiC
Gate-source voltage: -5...15V
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Gate charge: 33.8nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Drain-source voltage: 1.2kV
Drain current: 13.7A
Case: D2PAK-7
Polarisation: unipolar
On-state resistance: 0.365Ω
Pulsed drain current: 78A
Power dissipation: 68W
Technology: SiC
Gate-source voltage: -5...15V
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Gate charge: 33.8nC
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| NVHL160N120SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Drain-source voltage: 1.2kV
Drain current: 12A
Case: TO247-3
Polarisation: unipolar
On-state resistance: 337mΩ
Pulsed drain current: 69A
Power dissipation: 59W
Technology: SiC
Gate-source voltage: -5...20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Gate charge: 34nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Drain-source voltage: 1.2kV
Drain current: 12A
Case: TO247-3
Polarisation: unipolar
On-state resistance: 337mΩ
Pulsed drain current: 69A
Power dissipation: 59W
Technology: SiC
Gate-source voltage: -5...20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Gate charge: 34nC
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| NTH4L160N120SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Drain-source voltage: 1.2kV
Drain current: 12.3A
Case: TO247-4
Polarisation: unipolar
On-state resistance: 224mΩ
Pulsed drain current: 69A
Power dissipation: 55.5W
Technology: SiC
Gate-source voltage: -15...25V
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Gate charge: 34nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Drain-source voltage: 1.2kV
Drain current: 12.3A
Case: TO247-4
Polarisation: unipolar
On-state resistance: 224mΩ
Pulsed drain current: 69A
Power dissipation: 55.5W
Technology: SiC
Gate-source voltage: -15...25V
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Gate charge: 34nC
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Im Einkaufswagen
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| NVH4L160N120SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Drain-source voltage: 1.2kV
Drain current: 12.3A
Case: TO247-4
Polarisation: unipolar
On-state resistance: 377mΩ
Pulsed drain current: 69A
Power dissipation: 55.5W
Technology: SiC
Gate-source voltage: -5...20V
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Gate charge: 34nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Drain-source voltage: 1.2kV
Drain current: 12.3A
Case: TO247-4
Polarisation: unipolar
On-state resistance: 377mΩ
Pulsed drain current: 69A
Power dissipation: 55.5W
Technology: SiC
Gate-source voltage: -5...20V
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Gate charge: 34nC
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| TL431BVDR2G |
|
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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| FOD8802A |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 75V; SO8
Case: SO8
Mounting: SMD
Max. off-state voltage: 6V
Turn-off time: 40µs
Number of channels: 2
Manufacturer series: FOD8802
Collector-emitter voltage: 75V
CTR@If: 35-230%@1mA
Slew rate: 10kV/μs
Kind of output: transistor
Insulation voltage: 2.5kV
Type of optocoupler: optocoupler
Turn-on time: 6µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 75V; SO8
Case: SO8
Mounting: SMD
Max. off-state voltage: 6V
Turn-off time: 40µs
Number of channels: 2
Manufacturer series: FOD8802
Collector-emitter voltage: 75V
CTR@If: 35-230%@1mA
Slew rate: 10kV/μs
Kind of output: transistor
Insulation voltage: 2.5kV
Type of optocoupler: optocoupler
Turn-on time: 6µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| NTP055N65S3H |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 132A; 305W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 132A
Power dissipation: 305W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 132A; 305W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 132A
Power dissipation: 305W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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| FAN7388MX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO20; 10÷20V
Mounting: SMD
Supply voltage: 10...20V
Output current: 350...650mA
Polarisation: unipolar
Operating temperature: -40...150°C
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SO20
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO20; 10÷20V
Mounting: SMD
Supply voltage: 10...20V
Output current: 350...650mA
Polarisation: unipolar
Operating temperature: -40...150°C
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SO20
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| FGD3040G2-F085 |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Application: ignition systems
Mounting: SMD
Collector-emitter voltage: 400V
Power dissipation: 150W
Gate charge: 21nC
Version: ESD
Features of semiconductor devices: logic level
Type of transistor: IGBT
Kind of package: reel; tape
Case: DPAK
Gate-emitter voltage: ±10V
Collector current: 25.6A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Application: ignition systems
Mounting: SMD
Collector-emitter voltage: 400V
Power dissipation: 150W
Gate charge: 21nC
Version: ESD
Features of semiconductor devices: logic level
Type of transistor: IGBT
Kind of package: reel; tape
Case: DPAK
Gate-emitter voltage: ±10V
Collector current: 25.6A
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| FGD3040G2-F085C |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Application: ignition systems
Mounting: SMD
Collector-emitter voltage: 400V
Power dissipation: 150W
Gate charge: 21nC
Version: ESD
Features of semiconductor devices: logic level
Type of transistor: IGBT
Kind of package: reel; tape
Case: DPAK
Gate-emitter voltage: ±10V
Collector current: 25.6A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Application: ignition systems
Mounting: SMD
Collector-emitter voltage: 400V
Power dissipation: 150W
Gate charge: 21nC
Version: ESD
Features of semiconductor devices: logic level
Type of transistor: IGBT
Kind of package: reel; tape
Case: DPAK
Gate-emitter voltage: ±10V
Collector current: 25.6A
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| FGD3040G2-F085V |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Application: ignition systems
Mounting: SMD
Collector-emitter voltage: 400V
Power dissipation: 150W
Gate charge: 21nC
Version: ESD
Features of semiconductor devices: logic level
Type of transistor: IGBT
Kind of package: reel; tape
Case: DPAK
Gate-emitter voltage: ±10V
Collector current: 25.6A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Application: ignition systems
Mounting: SMD
Collector-emitter voltage: 400V
Power dissipation: 150W
Gate charge: 21nC
Version: ESD
Features of semiconductor devices: logic level
Type of transistor: IGBT
Kind of package: reel; tape
Case: DPAK
Gate-emitter voltage: ±10V
Collector current: 25.6A
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| 1N5375BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
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| 1N5375BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
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| 1N5342BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N5342BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
auf Bestellung 1195 Stücke:
Lieferzeit 14-21 Tag (e)