Foto | Bezeichnung | Hersteller | Beschreibung |
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BZX84C4V7LT3G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 3µA Manufacturer series: BZX84C |
Produkt ist nicht verfügbar |
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LM324M | ONSEMI |
![]() Description: IC: operational amplifier; Ch: 4; SO14; ±1.5÷16VDC,3÷32VDC; tube Type of integrated circuit: operational amplifier Mounting: SMT Number of channels: 4 Case: SO14 Operating temperature: 0...70°C Voltage supply range: ± 1.5...16V DC; 3...32V DC Kind of package: tube Power dissipation: 0.64W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
NST3904DXV6T1G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.357W Case: SOT563 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NST3904F3T5G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.36W; SOT1123 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.36W Case: SOT1123 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
Produkt ist nicht verfügbar |
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MJF45H11G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP Mounting: THT Collector current: 10A Kind of package: tube Current gain: 60 Type of transistor: PNP Case: TO220FP Collector-emitter voltage: 80V Polarisation: bipolar Power dissipation: 50W |
auf Bestellung 116 Stücke: Lieferzeit 14-21 Tag (e) |
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MJB45H11G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK Mounting: SMD Collector current: 10A Kind of package: tube Current gain: 60 Type of transistor: PNP Case: D2PAK Collector-emitter voltage: 80V Polarisation: bipolar Power dissipation: 50W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
MJB45H11T4G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK Mounting: SMD Collector current: 10A Kind of package: reel; tape Current gain: 60 Type of transistor: PNP Case: D2PAK Collector-emitter voltage: 80V Polarisation: bipolar Power dissipation: 50W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NJVMJB45H11T4G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK; automotive industry Mounting: SMD Collector current: 10A Kind of package: reel; tape Current gain: 60 Type of transistor: PNP Case: D2PAK Collector-emitter voltage: 80V Polarisation: bipolar Application: automotive industry Power dissipation: 50W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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BD243C | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 65W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 3MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NUP2105LT1G | ONSEMI |
![]() Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23 Type of diode: TVS array Breakdown voltage: 26.2...32V Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional; double Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Kind of package: reel; tape Application: CAN Version: ESD |
auf Bestellung 20072 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5344BRLG | ONSEMI |
![]() ![]() Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 10uA Type of diode: Zener Power dissipation: 5W Zener voltage: 8.2V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 10µA Manufacturer series: 1N53xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MMBTA06 | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.35W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SMMBTA06LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
auf Bestellung 5130 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBTA06WT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MMBTA06LT3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SMMBTA06LT3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
SMMBTA06WT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
SMMBTA06WT3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NSR1020MW2T1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 1A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Case: SOD323 Mounting: SMD Max. forward voltage: 0.54V Load current: 1A Max. off-state voltage: 20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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BU407 | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 330V; 7A; 60W; TO220 Case: TO220 Type of transistor: NPN Mounting: THT Collector current: 7A Power: 60W Collector-emitter voltage: 330V Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BD17516STU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 45V; 3A; 30W; TO126ISO Case: TO126ISO Mounting: THT Kind of package: tube Frequency: 3MHz Type of transistor: NPN Collector current: 3A Power dissipation: 30W Collector-emitter voltage: 45V Current gain: 100...250 Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
MC78M06CDTRKG | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; 6V; 0.5A; DPAK; SMD; reel,tape Kind of voltage regulator: fixed; linear Kind of package: reel; tape Mounting: SMD Type of integrated circuit: voltage regulator Output current: 0.5A Number of channels: 1 Output voltage: 6V Case: DPAK |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NXH030F120M3F1PTG | ONSEMI |
![]() Description: Module; transistor/transistor; 1.2kV; 38A; PIM22; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 38A Case: PIM22 Topology: H-bridge Electrical mounting: Press-in PCB On-state resistance: 68.2mΩ Pulsed drain current: 115A Power dissipation: 100W Technology: SiC Gate-source voltage: -10...22V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
MC74HC4538ADTR2G | ONSEMI |
![]() Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Number of inputs: 3 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: TSSOP16 Manufacturer series: HC Family: HC Operating temperature: -55...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NLV74HC4538ADR2G | ONSEMI |
![]() Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Number of inputs: 3 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: SOIC16 Manufacturer series: HC Family: HC Operating temperature: -55...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
FDMS86150ET100 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 90A; Idm: 617A; 187W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 90A Pulsed drain current: 617A Power dissipation: 187W Case: Power56 Gate-source voltage: ±20V On-state resistance: 9.1mΩ Mounting: SMD Gate charge: 62nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
1N459ATR | ONSEMI |
![]() ![]() Description: Diode: switching; THT; 200V; 0.5A; reel,tape; DO35 Case: DO35 Mounting: THT Kind of package: reel; tape Semiconductor structure: single diode Features of semiconductor devices: small signal Type of diode: switching Load current: 0.5A Max. off-state voltage: 200V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
1N459A | ONSEMI |
![]() Description: Diode: switching; THT; 200V; 0.5A; bulk; DO35 Case: DO35 Mounting: THT Kind of package: bulk Semiconductor structure: single diode Features of semiconductor devices: small signal Type of diode: switching Load current: 0.5A Max. off-state voltage: 200V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MMSZ5V1T1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZxxT1G |
auf Bestellung 8936 Stücke: Lieferzeit 14-21 Tag (e) |
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MM3Z5V1ST1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxST1G |
auf Bestellung 940 Stücke: Lieferzeit 14-21 Tag (e) |
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MM3Z5V1T1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G |
auf Bestellung 1261 Stücke: Lieferzeit 14-21 Tag (e) |
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MM5Z5V1ST1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD523F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD523F Semiconductor structure: single diode Manufacturer series: MM5ZxxST1G |
auf Bestellung 898 Stücke: Lieferzeit 14-21 Tag (e) |
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MM5Z5V6ST1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD523F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD523F Semiconductor structure: single diode Manufacturer series: MM5ZxxST1G |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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MM3Z5V1B | ONSEMI |
![]() Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.1V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode Manufacturer series: MM3ZxxB Leakage current: 1.8µA |
auf Bestellung 1515 Stücke: Lieferzeit 14-21 Tag (e) |
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LM337T | ONSEMI |
![]() Description: IC: voltage regulator; linear,adjustable; -37÷-1.2V; 1.5A; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: -37...-1.2V Output current: 1.5A Case: TO220-3 Mounting: THT Operating temperature: 0...125°C Number of channels: 1 Input voltage: 3...40V Kind of package: tube Heatsink thickness: 0.51...0.61mm |
Produkt ist nicht verfügbar |
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NCP731ADN500R2G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; MSOP8; SMD Case: MSOP8 Mounting: SMD Kind of package: reel; tape Output current: 0.15A Number of channels: 1 Output voltage: 5V Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MC14018BDG | ONSEMI |
![]() Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; 3÷18VDC; tube Operating temperature: -55...125°C Type of integrated circuit: digital Kind of integrated circuit: counter; divide by N Supply voltage: 3...18V DC Technology: CMOS Case: SOIC16 Kind of package: tube Mounting: SMD |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14018BDR2G | ONSEMI |
![]() Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; 3÷18VDC Operating temperature: -55...125°C Type of integrated circuit: digital Kind of integrated circuit: counter; divide by N Supply voltage: 3...18V DC Technology: CMOS Case: SOIC16 Kind of package: reel; tape Mounting: SMD |
Produkt ist nicht verfügbar |
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MC14011UBDG | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: tube Family: HEF4000B Delay time: 100ns |
auf Bestellung 550 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14011BDR2G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HEF4000B Delay time: 100ns |
Produkt ist nicht verfügbar |
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MC14011UBDR2G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HEF4000B Delay time: 100ns |
Produkt ist nicht verfügbar |
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55GN01CA-TB-E | ONSEMI |
![]() Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.2W; SC59 Case: SC59 Kind of package: reel; tape Type of transistor: NPN Collector current: 70mA Power dissipation: 0.2W Mounting: SMD Collector-emitter voltage: 10V Current gain: 100...180 Polarisation: bipolar Kind of transistor: RF Frequency: 3...5.5GHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
55GN01FA-TL-H | ONSEMI |
![]() Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.25W; SC81 Case: SC81 Kind of package: reel; tape Type of transistor: NPN Collector current: 70mA Power dissipation: 0.25W Mounting: SMD Collector-emitter voltage: 10V Current gain: 100...160 Polarisation: bipolar Application: automotive industry Kind of transistor: RF Frequency: 3...5.5GHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FQB33N10LTM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 23A Power dissipation: 127W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 40nC Kind of package: reel; tape Pulsed drain current: 132A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FQB33N10TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 23A Power dissipation: 127W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 52mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 51nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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FOD3150 | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: DIP8 Turn-on time: 60ns Turn-off time: 60ns Max. off-state voltage: 5V Output voltage: 0...35V Slew rate: 50kV/μs |
auf Bestellung 393 Stücke: Lieferzeit 14-21 Tag (e) |
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H11F3M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; DIP6 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: FET transistor Insulation voltage: 7.5kV Case: DIP6 Turn-on time: 45µs Turn-off time: 45µs Max. off-state voltage: 5V Manufacturer series: H11FXM |
auf Bestellung 821 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC642P | ONSEMI |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 1.2W; SuperSOT-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Power dissipation: 1.2W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 0.105Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NSR20F30NXT5G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape Type of diode: Schottky rectifying Case: DSN0603-2 Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.48V Max. load current: 4A Max. forward impulse current: 28A Kind of package: reel; tape |
auf Bestellung 966 Stücke: Lieferzeit 14-21 Tag (e) |
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UJ4C075018K3S | ONSEMI |
![]() Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 60A Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 750V Drain current: 60A Pulsed drain current: 205A Power dissipation: 385W Case: TO247-3 Gate-source voltage: -25...25V On-state resistance: 41mΩ Mounting: THT Gate charge: 37.8nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
FOD4116SD | ONSEMI |
![]() ![]() Description: Optotriac; 5kV; Uout: 600V; triac,zero voltage crossing driver Trigger current: 1.3mA Number of channels: 1 Max. off-state voltage: 6V Output voltage: 600V Insulation voltage: 5kV Case: SMT6 Manufacturer series: FOD4116 Kind of output: triac; zero voltage crossing driver Type of optocoupler: optotriac Kind of package: reel; tape Mounting: SMD Turn-off time: 52µs Turn-on time: 60µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
FOD4116SDV | ONSEMI |
![]() Description: Optotriac; 5kV; Uout: 600V; triac,zero voltage crossing driver Trigger current: 1.3mA Number of channels: 1 Max. off-state voltage: 6V Output voltage: 600V Insulation voltage: 5kV Case: SMT6 Manufacturer series: FOD4116 Kind of output: triac; zero voltage crossing driver Type of optocoupler: optotriac Kind of package: reel; tape Mounting: SMD Conform to the norm: VDE Turn-off time: 52µs Turn-on time: 60µs |
Produkt ist nicht verfügbar |
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NTB004N10G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 201A; Idm: 3002A; 340W; D2PAK Mounting: SMD Case: D2PAK Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 175nC On-state resistance: 4.2mΩ Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 201A Power dissipation: 340W Pulsed drain current: 3002A |
Produkt ist nicht verfügbar |
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NCP781BMN050TAG | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; 5V; 100mA; DFN6; SMD; NCP781 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 0.1A Case: DFN6 Mounting: SMD Manufacturer series: NCP781 Operating temperature: -40...125°C Tolerance: ±2.5% Number of channels: 1 Input voltage: 6...150V Voltage drop: 7V |
Produkt ist nicht verfügbar |
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NCP781BMN033TAG | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; 3.3V; 100mA; DFN6; SMD; NCP781 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 3.3V Output current: 0.1A Case: DFN6 Mounting: SMD Manufacturer series: NCP781 Operating temperature: -40...125°C Tolerance: ±2.5% Number of channels: 1 Input voltage: 6...150V Voltage drop: 6.5V |
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NCP781BMNADJTAG | ONSEMI |
![]() Description: IC: voltage regulator; linear,adjustable; 1.23÷15V; 100mA; DFN6 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.23...15V Output current: 0.1A Case: DFN6 Mounting: SMD Manufacturer series: NCP781 Operating temperature: -40...125°C Tolerance: ±2.5% Number of channels: 1 Input voltage: 6...150V |
Produkt ist nicht verfügbar |
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NTMTSC002N10MCTXG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 236A; Idm: 900A; 128W; TDFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 236A Pulsed drain current: 900A Power dissipation: 128W Case: TDFNW8 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 89nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NTMFS002N10MCLT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 175A; Idm: 1536A; 94W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 175A Pulsed drain current: 1536A Power dissipation: 94W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 97nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NTMTS002N10MCTXG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 236A; Idm: 900A; 128W; TDFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 236A Pulsed drain current: 900A Power dissipation: 128W Case: TDFNW8 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 89nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NVMFWS002N10MCLT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 177A; Idm: 900A; 97W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 177A Pulsed drain current: 900A Power dissipation: 97W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 97nC Kind of package: reel; tape Kind of channel: enhancement |
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Im Einkaufswagen Stück im Wert von UAH |
BZX84C4V7LT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Produkt ist nicht verfügbar
Im Einkaufswagen
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LM324M |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 4; SO14; ±1.5÷16VDC,3÷32VDC; tube
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 4
Case: SO14
Operating temperature: 0...70°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: tube
Power dissipation: 0.64W
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 4; SO14; ±1.5÷16VDC,3÷32VDC; tube
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 4
Case: SO14
Operating temperature: 0...70°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: tube
Power dissipation: 0.64W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NST3904DXV6T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.357W
Case: SOT563
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.357W
Case: SOT563
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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NST3904F3T5G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.36W; SOT1123
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT1123
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.36W; SOT1123
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT1123
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
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Stück im Wert von UAH
MJF45H11G |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP
Mounting: THT
Collector current: 10A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: TO220FP
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP
Mounting: THT
Collector current: 10A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: TO220FP
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
30+ | 2.43 EUR |
34+ | 2.12 EUR |
46+ | 1.56 EUR |
49+ | 1.49 EUR |
51+ | 1.42 EUR |
MJB45H11G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MJB45H11T4G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NJVMJB45H11T4G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Mounting: SMD
Collector current: 10A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Application: automotive industry
Power dissipation: 50W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Mounting: SMD
Collector current: 10A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Application: automotive industry
Power dissipation: 50W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BD243C |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Produkt ist nicht verfügbar
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Stück im Wert von UAH
NUP2105LT1G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Kind of package: reel; tape
Application: CAN
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Kind of package: reel; tape
Application: CAN
Version: ESD
auf Bestellung 20072 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
421+ | 0.17 EUR |
506+ | 0.14 EUR |
547+ | 0.13 EUR |
1129+ | 0.063 EUR |
1194+ | 0.06 EUR |
1N5344BRLG | ![]() |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 10uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 10uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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Stück im Wert von UAH
MMBTA06 |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMMBTA06LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 5130 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
250+ | 0.29 EUR |
353+ | 0.2 EUR |
385+ | 0.19 EUR |
508+ | 0.14 EUR |
597+ | 0.12 EUR |
910+ | 0.079 EUR |
962+ | 0.074 EUR |
1000+ | 0.073 EUR |
3000+ | 0.072 EUR |
MMBTA06WT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBTA06LT3G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMMBTA06LT3G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMMBTA06WT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMMBTA06WT3G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSR1020MW2T1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 1A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SOD323
Mounting: SMD
Max. forward voltage: 0.54V
Load current: 1A
Max. off-state voltage: 20V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 1A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SOD323
Mounting: SMD
Max. forward voltage: 0.54V
Load current: 1A
Max. off-state voltage: 20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BU407 |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 330V; 7A; 60W; TO220
Case: TO220
Type of transistor: NPN
Mounting: THT
Collector current: 7A
Power: 60W
Collector-emitter voltage: 330V
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 330V; 7A; 60W; TO220
Case: TO220
Type of transistor: NPN
Mounting: THT
Collector current: 7A
Power: 60W
Collector-emitter voltage: 330V
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BD17516STU |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 30W; TO126ISO
Case: TO126ISO
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Type of transistor: NPN
Collector current: 3A
Power dissipation: 30W
Collector-emitter voltage: 45V
Current gain: 100...250
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 30W; TO126ISO
Case: TO126ISO
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Type of transistor: NPN
Collector current: 3A
Power dissipation: 30W
Collector-emitter voltage: 45V
Current gain: 100...250
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC78M06CDTRKG |
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Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 6V; 0.5A; DPAK; SMD; reel,tape
Kind of voltage regulator: fixed; linear
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.5A
Number of channels: 1
Output voltage: 6V
Case: DPAK
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 6V; 0.5A; DPAK; SMD; reel,tape
Kind of voltage regulator: fixed; linear
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.5A
Number of channels: 1
Output voltage: 6V
Case: DPAK
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NXH030F120M3F1PTG |
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Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 38A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 38A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 68.2mΩ
Pulsed drain current: 115A
Power dissipation: 100W
Technology: SiC
Gate-source voltage: -10...22V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 38A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 38A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 68.2mΩ
Pulsed drain current: 115A
Power dissipation: 100W
Technology: SiC
Gate-source voltage: -10...22V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MC74HC4538ADTR2G |
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Hersteller: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NLV74HC4538ADR2G |
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Hersteller: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FDMS86150ET100 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; Idm: 617A; 187W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Pulsed drain current: 617A
Power dissipation: 187W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; Idm: 617A; 187W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Pulsed drain current: 617A
Power dissipation: 187W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N459ATR |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.5A; reel,tape; DO35
Case: DO35
Mounting: THT
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Load current: 0.5A
Max. off-state voltage: 200V
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.5A; reel,tape; DO35
Case: DO35
Mounting: THT
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Load current: 0.5A
Max. off-state voltage: 200V
Produkt ist nicht verfügbar
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1N459A |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.5A; bulk; DO35
Case: DO35
Mounting: THT
Kind of package: bulk
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Load current: 0.5A
Max. off-state voltage: 200V
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.5A; bulk; DO35
Case: DO35
Mounting: THT
Kind of package: bulk
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Load current: 0.5A
Max. off-state voltage: 200V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMSZ5V1T1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
auf Bestellung 8936 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
725+ | 0.099 EUR |
1034+ | 0.069 EUR |
1208+ | 0.059 EUR |
1737+ | 0.041 EUR |
2674+ | 0.027 EUR |
2825+ | 0.025 EUR |
6000+ | 0.024 EUR |
MM3Z5V1ST1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
auf Bestellung 940 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
715+ | 0.1 EUR |
940+ | 0.076 EUR |
MM3Z5V1T1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 1261 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
608+ | 0.12 EUR |
981+ | 0.073 EUR |
1261+ | 0.057 EUR |
MM5Z5V1ST1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxST1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxST1G
auf Bestellung 898 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
432+ | 0.17 EUR |
527+ | 0.14 EUR |
898+ | 0.08 EUR |
MM5Z5V6ST1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxST1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxST1G
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
658+ | 0.11 EUR |
845+ | 0.085 EUR |
1260+ | 0.057 EUR |
1573+ | 0.045 EUR |
1634+ | 0.044 EUR |
MM3Z5V1B |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
Leakage current: 1.8µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
Leakage current: 1.8µA
auf Bestellung 1515 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
584+ | 0.12 EUR |
782+ | 0.092 EUR |
893+ | 0.08 EUR |
1309+ | 0.055 EUR |
1515+ | 0.047 EUR |
LM337T |
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Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -37÷-1.2V; 1.5A; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -37...-1.2V
Output current: 1.5A
Case: TO220-3
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Kind of package: tube
Heatsink thickness: 0.51...0.61mm
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -37÷-1.2V; 1.5A; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -37...-1.2V
Output current: 1.5A
Case: TO220-3
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Kind of package: tube
Heatsink thickness: 0.51...0.61mm
Produkt ist nicht verfügbar
Im Einkaufswagen
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NCP731ADN500R2G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; MSOP8; SMD
Case: MSOP8
Mounting: SMD
Kind of package: reel; tape
Output current: 0.15A
Number of channels: 1
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; MSOP8; SMD
Case: MSOP8
Mounting: SMD
Kind of package: reel; tape
Output current: 0.15A
Number of channels: 1
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC14018BDG |
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Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; 3÷18VDC; tube
Operating temperature: -55...125°C
Type of integrated circuit: digital
Kind of integrated circuit: counter; divide by N
Supply voltage: 3...18V DC
Technology: CMOS
Case: SOIC16
Kind of package: tube
Mounting: SMD
Category: Counters/dividers
Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; 3÷18VDC; tube
Operating temperature: -55...125°C
Type of integrated circuit: digital
Kind of integrated circuit: counter; divide by N
Supply voltage: 3...18V DC
Technology: CMOS
Case: SOIC16
Kind of package: tube
Mounting: SMD
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.1 EUR |
MC14018BDR2G |
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Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; 3÷18VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Kind of integrated circuit: counter; divide by N
Supply voltage: 3...18V DC
Technology: CMOS
Case: SOIC16
Kind of package: reel; tape
Mounting: SMD
Category: Counters/dividers
Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; 3÷18VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Kind of integrated circuit: counter; divide by N
Supply voltage: 3...18V DC
Technology: CMOS
Case: SOIC16
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC14011UBDG |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HEF4000B
Delay time: 100ns
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HEF4000B
Delay time: 100ns
auf Bestellung 550 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
220+ | 0.33 EUR |
242+ | 0.3 EUR |
261+ | 0.27 EUR |
376+ | 0.19 EUR |
397+ | 0.18 EUR |
MC14011BDR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC14011UBDR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
55GN01CA-TB-E |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.2W; SC59
Case: SC59
Kind of package: reel; tape
Type of transistor: NPN
Collector current: 70mA
Power dissipation: 0.2W
Mounting: SMD
Collector-emitter voltage: 10V
Current gain: 100...180
Polarisation: bipolar
Kind of transistor: RF
Frequency: 3...5.5GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.2W; SC59
Case: SC59
Kind of package: reel; tape
Type of transistor: NPN
Collector current: 70mA
Power dissipation: 0.2W
Mounting: SMD
Collector-emitter voltage: 10V
Current gain: 100...180
Polarisation: bipolar
Kind of transistor: RF
Frequency: 3...5.5GHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
55GN01FA-TL-H |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.25W; SC81
Case: SC81
Kind of package: reel; tape
Type of transistor: NPN
Collector current: 70mA
Power dissipation: 0.25W
Mounting: SMD
Collector-emitter voltage: 10V
Current gain: 100...160
Polarisation: bipolar
Application: automotive industry
Kind of transistor: RF
Frequency: 3...5.5GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.25W; SC81
Case: SC81
Kind of package: reel; tape
Type of transistor: NPN
Collector current: 70mA
Power dissipation: 0.25W
Mounting: SMD
Collector-emitter voltage: 10V
Current gain: 100...160
Polarisation: bipolar
Application: automotive industry
Kind of transistor: RF
Frequency: 3...5.5GHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FQB33N10LTM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Power dissipation: 127W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 40nC
Kind of package: reel; tape
Pulsed drain current: 132A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Power dissipation: 127W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 40nC
Kind of package: reel; tape
Pulsed drain current: 132A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FQB33N10TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Power dissipation: 127W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 51nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Power dissipation: 127W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 51nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FOD3150 |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 60ns
Turn-off time: 60ns
Max. off-state voltage: 5V
Output voltage: 0...35V
Slew rate: 50kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 60ns
Turn-off time: 60ns
Max. off-state voltage: 5V
Output voltage: 0...35V
Slew rate: 50kV/μs
auf Bestellung 393 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
48+ | 1.52 EUR |
53+ | 1.36 EUR |
62+ | 1.16 EUR |
66+ | 1.1 EUR |
250+ | 1.06 EUR |
H11F3M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 7.5kV
Case: DIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 7.5kV
Case: DIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
auf Bestellung 821 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.96 EUR |
23+ | 3.25 EUR |
24+ | 3.06 EUR |
100+ | 3 EUR |
500+ | 2.95 EUR |
FDC642P |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 1.2W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Power dissipation: 1.2W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 1.2W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Power dissipation: 1.2W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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NSR20F30NXT5G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: DSN0603-2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Max. load current: 4A
Max. forward impulse current: 28A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: DSN0603-2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Max. load current: 4A
Max. forward impulse current: 28A
Kind of package: reel; tape
auf Bestellung 966 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
97+ | 0.74 EUR |
139+ | 0.52 EUR |
211+ | 0.34 EUR |
224+ | 0.32 EUR |
500+ | 0.31 EUR |
UJ4C075018K3S |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 60A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 60A
Pulsed drain current: 205A
Power dissipation: 385W
Case: TO247-3
Gate-source voltage: -25...25V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 60A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 60A
Pulsed drain current: 205A
Power dissipation: 385W
Case: TO247-3
Gate-source voltage: -25...25V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
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FOD4116SD |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac,zero voltage crossing driver
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4116
Kind of output: triac; zero voltage crossing driver
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Turn-off time: 52µs
Turn-on time: 60µs
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac,zero voltage crossing driver
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4116
Kind of output: triac; zero voltage crossing driver
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Turn-off time: 52µs
Turn-on time: 60µs
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FOD4116SDV |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac,zero voltage crossing driver
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4116
Kind of output: triac; zero voltage crossing driver
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Conform to the norm: VDE
Turn-off time: 52µs
Turn-on time: 60µs
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac,zero voltage crossing driver
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4116
Kind of output: triac; zero voltage crossing driver
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Conform to the norm: VDE
Turn-off time: 52µs
Turn-on time: 60µs
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NTB004N10G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 201A; Idm: 3002A; 340W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 175nC
On-state resistance: 4.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 201A
Power dissipation: 340W
Pulsed drain current: 3002A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 201A; Idm: 3002A; 340W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 175nC
On-state resistance: 4.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 201A
Power dissipation: 340W
Pulsed drain current: 3002A
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NCP781BMN050TAG |
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Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 100mA; DFN6; SMD; NCP781
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.1A
Case: DFN6
Mounting: SMD
Manufacturer series: NCP781
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...150V
Voltage drop: 7V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 100mA; DFN6; SMD; NCP781
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.1A
Case: DFN6
Mounting: SMD
Manufacturer series: NCP781
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...150V
Voltage drop: 7V
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NCP781BMN033TAG |
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Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 3.3V; 100mA; DFN6; SMD; NCP781
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 3.3V
Output current: 0.1A
Case: DFN6
Mounting: SMD
Manufacturer series: NCP781
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...150V
Voltage drop: 6.5V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 3.3V; 100mA; DFN6; SMD; NCP781
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 3.3V
Output current: 0.1A
Case: DFN6
Mounting: SMD
Manufacturer series: NCP781
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...150V
Voltage drop: 6.5V
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NCP781BMNADJTAG |
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Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.23÷15V; 100mA; DFN6
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.23...15V
Output current: 0.1A
Case: DFN6
Mounting: SMD
Manufacturer series: NCP781
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...150V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.23÷15V; 100mA; DFN6
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.23...15V
Output current: 0.1A
Case: DFN6
Mounting: SMD
Manufacturer series: NCP781
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...150V
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NTMTSC002N10MCTXG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 236A; Idm: 900A; 128W; TDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 236A
Pulsed drain current: 900A
Power dissipation: 128W
Case: TDFNW8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 236A; Idm: 900A; 128W; TDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 236A
Pulsed drain current: 900A
Power dissipation: 128W
Case: TDFNW8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMFS002N10MCLT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 175A; Idm: 1536A; 94W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 175A
Pulsed drain current: 1536A
Power dissipation: 94W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 97nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 175A; Idm: 1536A; 94W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 175A
Pulsed drain current: 1536A
Power dissipation: 94W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 97nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMTS002N10MCTXG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 236A; Idm: 900A; 128W; TDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 236A
Pulsed drain current: 900A
Power dissipation: 128W
Case: TDFNW8
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 236A; Idm: 900A; 128W; TDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 236A
Pulsed drain current: 900A
Power dissipation: 128W
Case: TDFNW8
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFWS002N10MCLT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 177A; Idm: 900A; 97W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 177A
Pulsed drain current: 900A
Power dissipation: 97W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 97nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 177A; Idm: 900A; 97W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 177A
Pulsed drain current: 900A
Power dissipation: 97W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 97nC
Kind of package: reel; tape
Kind of channel: enhancement
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