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NCP3127CRAGEVB NCP3127CRAGEVB onsemi ncp3127-d.pdf Description: BOARD EVALUATION NCP3127 CERAMIC
Produkt ist nicht verfügbar
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NCP3170AGEVB NCP3170AGEVB onsemi Description: EVAL BOARD FOR NCP3170
Packaging: Bulk
Voltage - Input: 4.5V ~ 18V
Current - Output: 3A
Frequency - Switching: 500kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: NCP3170
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
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NCP3337MN180GEVB NCP3337MN180GEVB onsemi ncp3337-d.pdf Description: EVAL BOARD FOR NCP3337
Packaging: Bulk
Voltage - Output: 1.8V
Voltage - Input: 2.9V ~ 12V
Current - Output: 500mA
Regulator Type: Positive Adjustable
Board Type: Fully Populated
Utilized IC / Part: NCP3337
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Contents: Board(s)
Produkt ist nicht verfügbar
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NCP3337MN250GEVB NCP3337MN250GEVB onsemi ncp3337-d.pdf Description: BOARD EVALUATION NCP3337 2.5V
Packaging: Bulk
Voltage - Output: 2.5V
Voltage - Input: 2.9V ~ 12V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: NCP3337
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Produkt ist nicht verfügbar
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NCP3337MN330GEVB NCP3337MN330GEVB onsemi ncp3337-d.pdf Description: BOARD EVALUATION NCP3337 3.3V
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 2.9V ~ 12V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: NCP3337
Supplied Contents: Board(s)
Channels per IC: 1 - Single
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+60.95 EUR
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NCP3337MN500GEVB NCP3337MN500GEVB onsemi ncp3337-d.pdf Description: BOARD EVALUATION NCP3337 5.0V
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 2.9V ~ 12V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: NCP3337
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Produkt ist nicht verfügbar
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NCP3337MNADJGEVB NCP3337MNADJGEVB onsemi NCP3337MNADJGEVB_Web.pdf Description: BOARD EVALUATION NCP3337 ADJ
Packaging: Box
Voltage - Output: 1.25V ~ 10V
Voltage - Input: 2.9V ~ 12V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: NCP3337
Supplied Contents: Board(s)
Channels per IC: 1 - Single
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+60.95 EUR
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NCP508SQ15T1GEVB NCP508SQ15T1GEVB onsemi ncp508-d.pdf Description: EVAL BOARD FOR NCP508
Packaging: Bulk
Voltage - Output: 1.5V
Voltage - Input: 5V
Current - Output: 50mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: NCP508
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Contents: Board(s)
Produkt ist nicht verfügbar
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NCP508SQ33T1GEVB NCP508SQ33T1GEVB onsemi ncp508-d.pdf Description: EVAL BOARD FOR NCP508
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 5V
Current - Output: 50mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: NCP508
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Contents: Board(s)
Produkt ist nicht verfügbar
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NCP580EVB NCP580EVB onsemi ncp580.pdf Description: EVAL BOARD FOR NCP580
Packaging: Bulk
Voltage - Output: 2.8V
Voltage - Input: 1.5V ~ 4V
Current - Output: 120mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: NCP580
Channels per IC: 1 - Single
Produkt ist nicht verfügbar
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NCP59302DSADGEVB NCP59302DSADGEVB onsemi ncp59302-d.pdf Description: BOARD EVALUATION NCP59302 REG
Packaging: Bulk
Voltage - Output: 2.5V
Current - Output: 3A
Regulator Type: Positive Adjustable
Board Type: Fully Populated
Utilized IC / Part: NCP59302
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+110 EUR
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NCS2553DGEVB NCS2553DGEVB onsemi ncs2553-d.pdf Description: EVAL BOARD FOR NCS2553
Packaging: Bulk
Function: Amplifier, Triple
Type: Video
Utilized IC / Part: NCS2553
Supplied Contents: Board(s)
Primary Attributes: Gain 6dB, Reconstruction Filters
Embedded: No
Part Status: Not For New Designs
Contents: Board(s)
Secondary Attributes: AC- or DC-Coupled Inputs and Outputs
Produkt ist nicht verfügbar
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NCS2563DGEVB NCS2563DGEVB onsemi ncs2563-d.pdf Description: EVAL BOARD FOR NCS2563
Packaging: Bulk
Function: Amplifier, Triple
Type: Video
Utilized IC / Part: NCS2563
Supplied Contents: Board(s)
Primary Attributes: Gain 6dB, Reconstruction Filters
Embedded: No
Secondary Attributes: AC- or DC-Coupled Inputs and Outputs
Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+157.27 EUR
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NCV7680PWR22GEVB NCV7680PWR22GEVB onsemi ncv7680-d.pdf Description: BOARD EVALUATION NCV7680
Packaging: Bulk
Features: PWM Brightness control
Utilized IC / Part: NCV7680
Supplied Contents: Board(s)
Outputs and Type: 8, Non-Isolated
Produkt ist nicht verfügbar
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NCV8537MN180GEVB NCV8537MN180GEVB onsemi ncv8537-d.pdf Description: EVAL BOARD FOR NCV8537
Packaging: Bulk
Voltage - Output: 1.8V
Voltage - Input: 2.9V ~ 12V
Current - Output: 500mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: NCV8537
Channels per IC: 1 - Single
Produkt ist nicht verfügbar
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15GN01CA-TB-E 15GN01CA-TB-E onsemi ena1098-d.pdf Description: RF TRANS NPN 8V 1.5GHZ 3-CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 5V
Frequency - Transition: 1.5GHz
Supplier Device Package: 3-CP
Produkt ist nicht verfügbar
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2SA2099 2SA2099 onsemi 2SA2099%2C%202SC5888.pdf Description: TRANS PNP 50V 10A TO-220ML
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 250mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TO-220ML
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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2SA2125-TD-E 2SA2125-TD-E onsemi 2sa2125-d.pdf Description: TRANS PNP 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
auf Bestellung 62000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+0.33 EUR
2000+0.3 EUR
3000+0.28 EUR
5000+0.26 EUR
7000+0.25 EUR
10000+0.24 EUR
25000+0.22 EUR
Mindestbestellmenge: 1000
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2SA2126-E 2SA2126-E onsemi en7990-d.pdf Description: TRANS PNP 50V 3A TP
Packaging: Bag
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 520mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
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2SB1124T-TD-E 2SB1124T-TD-E onsemi en2019-d.pdf Description: TRANS PNP 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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2SB1143S 2SB1143S onsemi 2SB1143%2C2SD1683.pdf Description: TRANS PNP 50V 4A TO126ML
Packaging: Bag
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126ML
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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2SB1143T 2SB1143T onsemi 2SB1143,2SD1683.pdf Description: TRANS PNP 50V 4A TO126ML
Packaging: Bag
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126ML
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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2SB1202T-TL-E 2SB1202T-TL-E onsemi Description: TRANS PNP 50V 3A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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2SC4731S-AY 2SC4731S-AY onsemi Description: TRANS NPN 100V 4A FLP
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 No Tab
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: FLP
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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2SC4731T-AY 2SC4731T-AY onsemi Description: TRANS NPN 100V 4A FLP
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 No Tab
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: FLP
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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2SC5226A-4-TL-E 2SC5226A-4-TL-E onsemi 2sc5226a-d.pdf Description: RF TRANS NPN 10V 7GHZ SC-70 MCP3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Supplier Device Package: SC-70 / MCP3
Part Status: Active
Produkt ist nicht verfügbar
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2SC5226A-5-TL-E 2SC5226A-5-TL-E onsemi 2sc5226a-d.pdf Description: RF TRANS NPN 10V 7GHZ 3MCP
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Supplier Device Package: 3-MCP
Part Status: Active
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.2 EUR
6000+0.19 EUR
9000+0.17 EUR
Mindestbestellmenge: 3000
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2SC5227A-5-TB-E 2SC5227A-5-TB-E onsemi 2sc5227a-d.pdf Description: RF TRANS NPN 10V 7GHZ 3-CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Supplier Device Package: 3-CP
Produkt ist nicht verfügbar
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2SC5231A-8-TL-E 2SC5231A-8-TL-E onsemi 2SC5231A.pdf Description: RF TRANS NPN 10V 7GHZ SMCP
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Supplier Device Package: SMCP
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC5347AF-TD-E 2SC5347AF-TD-E onsemi ena1087-d.pdf Description: RF TRANS NPN 12V 4.7GHZ PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 8dB
Power - Max: 1.3W
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 50mA, 5V
Frequency - Transition: 4.7GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Supplier Device Package: PCP
Produkt ist nicht verfügbar
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2SC5488A-TL-H 2SC5488A-TL-H onsemi 2sc5488a-d.pdf Description: RF TRANS NPN 10V 7GHZ 3-SSFP
Packaging: Tape & Reel (TR)
Package / Case: SC-81
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Supplier Device Package: 3-SSFP
Part Status: Active
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
8000+0.19 EUR
Mindestbestellmenge: 8000
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2SC5551AE-TD-E 2SC5551AE-TD-E onsemi 2sc5551a-d.pdf Description: RF TRANS NPN 30V 3.5GHZ PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 1.3W
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: PCP
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC5551AF-TD-E 2SC5551AF-TD-E onsemi 2sc5551a-d.pdf Description: RF TRANS NPN 30V 3.5GHZ PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 1.3W
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 50mA, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: PCP
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC5888 2SC5888 onsemi 2SA2099%2C%202SC5888.pdf Description: TRANS NPN 50V 10A TO-220ML
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 250mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-220ML
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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2SC5964-TD-E 2SC5964-TD-E onsemi 2sa2125-d.pdf Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+0.35 EUR
2000+0.32 EUR
3000+0.3 EUR
5000+0.28 EUR
Mindestbestellmenge: 1000
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2SC6094-TD-E 2SC6094-TD-E onsemi ena0410-d.pdf Description: TRANS NPN 60V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
Produkt ist nicht verfügbar
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2SC6097-E 2SC6097-E onsemi 2sc6097-d.pdf Description: TRANS NPN 60V 3A TP
Packaging: Bag
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 135mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
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2SC6097-TL-E 2SC6097-TL-E onsemi 2sc6097-d.pdf Description: TRANS NPN 60V 3A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 135mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
auf Bestellung 51100 Stücke:
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1400+0.56 EUR
2100+0.53 EUR
3500+0.5 EUR
4900+0.48 EUR
7000+0.47 EUR
17500+0.44 EUR
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2SD1624T-TD-E 2SD1624T-TD-E onsemi en2019-d.pdf Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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1000+0.43 EUR
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2SD1802S-TL-E 2SD1802S-TL-E onsemi 2sb1202-d.pdf Description: TRANS NPN 50V 3A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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2SD1802T-TL-E 2SD1802T-TL-E onsemi 2sb1202-d.pdf Description: TRANS NPN 50V 3A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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2SD1816S-TL-E 2SD1816S-TL-E onsemi 2sb1216_2sd1816-d.pdf Description: TRANS NPN 100V 4A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
auf Bestellung 1400 Stücke:
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700+0.56 EUR
1400+0.51 EUR
Mindestbestellmenge: 700
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2SD1816T-TL-E 2SD1816T-TL-E onsemi 2sb1216_2sd1816-d.pdf Description: TRANS NPN 100V 4A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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2SJ652 2SJ652 onsemi Description: MOSFET P-CH 60V 28A TO220ML
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 14A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Supplier Device Package: TO-220ML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 20 V
Produkt ist nicht verfügbar
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2SK3557-6-TB-E 2SK3557-6-TB-E onsemi 2sk3557-d.pdf Description: JFET N-CH 5V 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 50mA
Mounting Type: Surface Mount
Configuration: N-Channel
Power - Output: 200mW
Technology: JFET
Noise Figure: 1dB
Supplier Device Package: 3-CP
Part Status: Active
Voltage - Rated: 15 V
Voltage - Test: 5 V
Current - Test: 1 mA
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 15 V
Current Drain (Id) - Max: 50 mA
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 5 V
auf Bestellung 9000 Stücke:
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3000+0.23 EUR
6000+0.22 EUR
9000+0.19 EUR
Mindestbestellmenge: 3000
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2SK3703 2SK3703 onsemi Description: MOSFET N-CH 60V 30A TO220ML
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Supplier Device Package: TO-220ML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 20 V
Produkt ist nicht verfügbar
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2SK3704 2SK3704 onsemi 2SK3704.pdf Description: MOSFET N-CH 60V 45A TO220ML
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 23A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Supplier Device Package: TO-220ML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 20 V
Produkt ist nicht verfügbar
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2SK3745LS 2SK3745LS onsemi 2sk3745ls-d.pdf Description: MOSFET N-CH 1500V 2A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Supplier Device Package: TO-220FI(LS)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
Produkt ist nicht verfügbar
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2SK3746 2SK3746 onsemi 2sk3746-d.pdf Description: MOSFET N-CH 1500V 2A TO3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 110W (Tc)
Supplier Device Package: TO-3PB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
Produkt ist nicht verfügbar
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2SK3747 2SK3747 onsemi 2sk3747-d.pdf Description: MOSFET N-CH 1500V 2A TO3PML
Packaging: Tray
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Supplier Device Package: TO-3PML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±35V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
Produkt ist nicht verfügbar
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2SK3747-MG8 2SK3747-MG8 onsemi Description: MOSFET N-CH 1500V 2A TO3PML
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Supplier Device Package: TO-3PML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±35V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
Produkt ist nicht verfügbar
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2SK3748 2SK3748 onsemi 2SK3748.pdf Description: MOSFET N-CH 1500V 4A TO3PML
Packaging: Tray
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 7Ohm @ 2A, 10V
Power Dissipation (Max): 3W (Ta), 65W (Tc)
Supplier Device Package: TO-3PML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
Produkt ist nicht verfügbar
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2SK3796-3-TL-E 2SK3796-3-TL-E onsemi 2SK3796.pdf Description: JFET N-CH 10MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SMCP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 100 mW
Resistance - RDS(On): 200 Ohms
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
Produkt ist nicht verfügbar
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2SK4065-DL-E 2SK4065-DL-E onsemi Description: MOSFET N-CH 75V 100A SMP-FD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: SMP-FD
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V
Produkt ist nicht verfügbar
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2SK4065-E 2SK4065-E onsemi Description: MOSFET N-CH 75V 100A SMP
Packaging: Bag
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: SMP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V
Produkt ist nicht verfügbar
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2SK4066-E 2SK4066-E onsemi Description: MOSFET N-CH 60V 100A SMP
Packaging: Bag
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: SMP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
Produkt ist nicht verfügbar
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2SK4087LS 2SK4087LS onsemi 2SK4087LS.pdf Description: MOSFET N-CH 600V 9.2A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Produkt ist nicht verfügbar
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2SK4088LS 2SK4088LS onsemi 2SK4088LS_May2013.pdf Description: MOSFET N-CH 650V 7.5A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta), 37W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Produkt ist nicht verfügbar
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2SK4089LS 2SK4089LS onsemi 2SK4089LS.pdf Description: MOSFET N-CH 650V 8.5A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Produkt ist nicht verfügbar
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2SK4117LS 2SK4117LS onsemi 2SK4117LS.pdf Description: MOSFET N-CH 400V 10.4A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 30 V
Produkt ist nicht verfügbar
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NCP3127CRAGEVB ncp3127-d.pdf
NCP3127CRAGEVB
Hersteller: onsemi
Description: BOARD EVALUATION NCP3127 CERAMIC
Produkt ist nicht verfügbar
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NCP3170AGEVB
NCP3170AGEVB
Hersteller: onsemi
Description: EVAL BOARD FOR NCP3170
Packaging: Bulk
Voltage - Input: 4.5V ~ 18V
Current - Output: 3A
Frequency - Switching: 500kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: NCP3170
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
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NCP3337MN180GEVB ncp3337-d.pdf
NCP3337MN180GEVB
Hersteller: onsemi
Description: EVAL BOARD FOR NCP3337
Packaging: Bulk
Voltage - Output: 1.8V
Voltage - Input: 2.9V ~ 12V
Current - Output: 500mA
Regulator Type: Positive Adjustable
Board Type: Fully Populated
Utilized IC / Part: NCP3337
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Contents: Board(s)
Produkt ist nicht verfügbar
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NCP3337MN250GEVB ncp3337-d.pdf
NCP3337MN250GEVB
Hersteller: onsemi
Description: BOARD EVALUATION NCP3337 2.5V
Packaging: Bulk
Voltage - Output: 2.5V
Voltage - Input: 2.9V ~ 12V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: NCP3337
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Produkt ist nicht verfügbar
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NCP3337MN330GEVB ncp3337-d.pdf
NCP3337MN330GEVB
Hersteller: onsemi
Description: BOARD EVALUATION NCP3337 3.3V
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 2.9V ~ 12V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: NCP3337
Supplied Contents: Board(s)
Channels per IC: 1 - Single
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+60.95 EUR
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NCP3337MN500GEVB ncp3337-d.pdf
NCP3337MN500GEVB
Hersteller: onsemi
Description: BOARD EVALUATION NCP3337 5.0V
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 2.9V ~ 12V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: NCP3337
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Produkt ist nicht verfügbar
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NCP3337MNADJGEVB NCP3337MNADJGEVB_Web.pdf
NCP3337MNADJGEVB
Hersteller: onsemi
Description: BOARD EVALUATION NCP3337 ADJ
Packaging: Box
Voltage - Output: 1.25V ~ 10V
Voltage - Input: 2.9V ~ 12V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: NCP3337
Supplied Contents: Board(s)
Channels per IC: 1 - Single
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+60.95 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NCP508SQ15T1GEVB ncp508-d.pdf
NCP508SQ15T1GEVB
Hersteller: onsemi
Description: EVAL BOARD FOR NCP508
Packaging: Bulk
Voltage - Output: 1.5V
Voltage - Input: 5V
Current - Output: 50mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: NCP508
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Contents: Board(s)
Produkt ist nicht verfügbar
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NCP508SQ33T1GEVB ncp508-d.pdf
NCP508SQ33T1GEVB
Hersteller: onsemi
Description: EVAL BOARD FOR NCP508
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 5V
Current - Output: 50mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: NCP508
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Contents: Board(s)
Produkt ist nicht verfügbar
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NCP580EVB ncp580.pdf
NCP580EVB
Hersteller: onsemi
Description: EVAL BOARD FOR NCP580
Packaging: Bulk
Voltage - Output: 2.8V
Voltage - Input: 1.5V ~ 4V
Current - Output: 120mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: NCP580
Channels per IC: 1 - Single
Produkt ist nicht verfügbar
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NCP59302DSADGEVB ncp59302-d.pdf
NCP59302DSADGEVB
Hersteller: onsemi
Description: BOARD EVALUATION NCP59302 REG
Packaging: Bulk
Voltage - Output: 2.5V
Current - Output: 3A
Regulator Type: Positive Adjustable
Board Type: Fully Populated
Utilized IC / Part: NCP59302
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+110 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NCS2553DGEVB ncs2553-d.pdf
NCS2553DGEVB
Hersteller: onsemi
Description: EVAL BOARD FOR NCS2553
Packaging: Bulk
Function: Amplifier, Triple
Type: Video
Utilized IC / Part: NCS2553
Supplied Contents: Board(s)
Primary Attributes: Gain 6dB, Reconstruction Filters
Embedded: No
Part Status: Not For New Designs
Contents: Board(s)
Secondary Attributes: AC- or DC-Coupled Inputs and Outputs
Produkt ist nicht verfügbar
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NCS2563DGEVB ncs2563-d.pdf
NCS2563DGEVB
Hersteller: onsemi
Description: EVAL BOARD FOR NCS2563
Packaging: Bulk
Function: Amplifier, Triple
Type: Video
Utilized IC / Part: NCS2563
Supplied Contents: Board(s)
Primary Attributes: Gain 6dB, Reconstruction Filters
Embedded: No
Secondary Attributes: AC- or DC-Coupled Inputs and Outputs
Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+157.27 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NCV7680PWR22GEVB ncv7680-d.pdf
NCV7680PWR22GEVB
Hersteller: onsemi
Description: BOARD EVALUATION NCV7680
Packaging: Bulk
Features: PWM Brightness control
Utilized IC / Part: NCV7680
Supplied Contents: Board(s)
Outputs and Type: 8, Non-Isolated
Produkt ist nicht verfügbar
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NCV8537MN180GEVB ncv8537-d.pdf
NCV8537MN180GEVB
Hersteller: onsemi
Description: EVAL BOARD FOR NCV8537
Packaging: Bulk
Voltage - Output: 1.8V
Voltage - Input: 2.9V ~ 12V
Current - Output: 500mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: NCV8537
Channels per IC: 1 - Single
Produkt ist nicht verfügbar
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15GN01CA-TB-E ena1098-d.pdf
15GN01CA-TB-E
Hersteller: onsemi
Description: RF TRANS NPN 8V 1.5GHZ 3-CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 5V
Frequency - Transition: 1.5GHz
Supplier Device Package: 3-CP
Produkt ist nicht verfügbar
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2SA2099 2SA2099%2C%202SC5888.pdf
2SA2099
Hersteller: onsemi
Description: TRANS PNP 50V 10A TO-220ML
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 250mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TO-220ML
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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2SA2125-TD-E 2sa2125-d.pdf
2SA2125-TD-E
Hersteller: onsemi
Description: TRANS PNP 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
auf Bestellung 62000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.33 EUR
2000+0.3 EUR
3000+0.28 EUR
5000+0.26 EUR
7000+0.25 EUR
10000+0.24 EUR
25000+0.22 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
2SA2126-E en7990-d.pdf
2SA2126-E
Hersteller: onsemi
Description: TRANS PNP 50V 3A TP
Packaging: Bag
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 520mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
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2SB1124T-TD-E en2019-d.pdf
2SB1124T-TD-E
Hersteller: onsemi
Description: TRANS PNP 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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2SB1143S 2SB1143%2C2SD1683.pdf
2SB1143S
Hersteller: onsemi
Description: TRANS PNP 50V 4A TO126ML
Packaging: Bag
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126ML
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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2SB1143T 2SB1143,2SD1683.pdf
2SB1143T
Hersteller: onsemi
Description: TRANS PNP 50V 4A TO126ML
Packaging: Bag
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126ML
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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2SB1202T-TL-E
2SB1202T-TL-E
Hersteller: onsemi
Description: TRANS PNP 50V 3A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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2SC4731S-AY
2SC4731S-AY
Hersteller: onsemi
Description: TRANS NPN 100V 4A FLP
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 No Tab
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: FLP
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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2SC4731T-AY
2SC4731T-AY
Hersteller: onsemi
Description: TRANS NPN 100V 4A FLP
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 No Tab
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: FLP
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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2SC5226A-4-TL-E 2sc5226a-d.pdf
2SC5226A-4-TL-E
Hersteller: onsemi
Description: RF TRANS NPN 10V 7GHZ SC-70 MCP3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Supplier Device Package: SC-70 / MCP3
Part Status: Active
Produkt ist nicht verfügbar
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2SC5226A-5-TL-E 2sc5226a-d.pdf
2SC5226A-5-TL-E
Hersteller: onsemi
Description: RF TRANS NPN 10V 7GHZ 3MCP
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Supplier Device Package: 3-MCP
Part Status: Active
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.2 EUR
6000+0.19 EUR
9000+0.17 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
2SC5227A-5-TB-E 2sc5227a-d.pdf
2SC5227A-5-TB-E
Hersteller: onsemi
Description: RF TRANS NPN 10V 7GHZ 3-CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Supplier Device Package: 3-CP
Produkt ist nicht verfügbar
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2SC5231A-8-TL-E 2SC5231A.pdf
2SC5231A-8-TL-E
Hersteller: onsemi
Description: RF TRANS NPN 10V 7GHZ SMCP
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Supplier Device Package: SMCP
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC5347AF-TD-E ena1087-d.pdf
2SC5347AF-TD-E
Hersteller: onsemi
Description: RF TRANS NPN 12V 4.7GHZ PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 8dB
Power - Max: 1.3W
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 50mA, 5V
Frequency - Transition: 4.7GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Supplier Device Package: PCP
Produkt ist nicht verfügbar
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2SC5488A-TL-H 2sc5488a-d.pdf
2SC5488A-TL-H
Hersteller: onsemi
Description: RF TRANS NPN 10V 7GHZ 3-SSFP
Packaging: Tape & Reel (TR)
Package / Case: SC-81
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Supplier Device Package: 3-SSFP
Part Status: Active
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.19 EUR
Mindestbestellmenge: 8000
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2SC5551AE-TD-E 2sc5551a-d.pdf
2SC5551AE-TD-E
Hersteller: onsemi
Description: RF TRANS NPN 30V 3.5GHZ PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 1.3W
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: PCP
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC5551AF-TD-E 2sc5551a-d.pdf
2SC5551AF-TD-E
Hersteller: onsemi
Description: RF TRANS NPN 30V 3.5GHZ PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 1.3W
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 50mA, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: PCP
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC5888 2SA2099%2C%202SC5888.pdf
2SC5888
Hersteller: onsemi
Description: TRANS NPN 50V 10A TO-220ML
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 250mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-220ML
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC5964-TD-E 2sa2125-d.pdf
2SC5964-TD-E
Hersteller: onsemi
Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.35 EUR
2000+0.32 EUR
3000+0.3 EUR
5000+0.28 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
2SC6094-TD-E ena0410-d.pdf
2SC6094-TD-E
Hersteller: onsemi
Description: TRANS NPN 60V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
Produkt ist nicht verfügbar
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2SC6097-E 2sc6097-d.pdf
2SC6097-E
Hersteller: onsemi
Description: TRANS NPN 60V 3A TP
Packaging: Bag
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 135mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC6097-TL-E 2sc6097-d.pdf
2SC6097-TL-E
Hersteller: onsemi
Description: TRANS NPN 60V 3A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 135mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
auf Bestellung 51100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
700+0.62 EUR
1400+0.56 EUR
2100+0.53 EUR
3500+0.5 EUR
4900+0.48 EUR
7000+0.47 EUR
17500+0.44 EUR
Mindestbestellmenge: 700
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2SD1624T-TD-E en2019-d.pdf
2SD1624T-TD-E
Hersteller: onsemi
Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.43 EUR
Mindestbestellmenge: 1000
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2SD1802S-TL-E 2sb1202-d.pdf
2SD1802S-TL-E
Hersteller: onsemi
Description: TRANS NPN 50V 3A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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2SD1802T-TL-E 2sb1202-d.pdf
2SD1802T-TL-E
Hersteller: onsemi
Description: TRANS NPN 50V 3A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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2SD1816S-TL-E 2sb1216_2sd1816-d.pdf
2SD1816S-TL-E
Hersteller: onsemi
Description: TRANS NPN 100V 4A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
700+0.56 EUR
1400+0.51 EUR
Mindestbestellmenge: 700
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2SD1816T-TL-E 2sb1216_2sd1816-d.pdf
2SD1816T-TL-E
Hersteller: onsemi
Description: TRANS NPN 100V 4A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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2SJ652
2SJ652
Hersteller: onsemi
Description: MOSFET P-CH 60V 28A TO220ML
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 14A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Supplier Device Package: TO-220ML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 20 V
Produkt ist nicht verfügbar
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2SK3557-6-TB-E 2sk3557-d.pdf
2SK3557-6-TB-E
Hersteller: onsemi
Description: JFET N-CH 5V 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 50mA
Mounting Type: Surface Mount
Configuration: N-Channel
Power - Output: 200mW
Technology: JFET
Noise Figure: 1dB
Supplier Device Package: 3-CP
Part Status: Active
Voltage - Rated: 15 V
Voltage - Test: 5 V
Current - Test: 1 mA
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 15 V
Current Drain (Id) - Max: 50 mA
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 5 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.23 EUR
6000+0.22 EUR
9000+0.19 EUR
Mindestbestellmenge: 3000
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2SK3703
2SK3703
Hersteller: onsemi
Description: MOSFET N-CH 60V 30A TO220ML
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Supplier Device Package: TO-220ML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 20 V
Produkt ist nicht verfügbar
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2SK3704 2SK3704.pdf
2SK3704
Hersteller: onsemi
Description: MOSFET N-CH 60V 45A TO220ML
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 23A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Supplier Device Package: TO-220ML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 20 V
Produkt ist nicht verfügbar
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2SK3745LS 2sk3745ls-d.pdf
2SK3745LS
Hersteller: onsemi
Description: MOSFET N-CH 1500V 2A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Supplier Device Package: TO-220FI(LS)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
Produkt ist nicht verfügbar
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2SK3746 2sk3746-d.pdf
2SK3746
Hersteller: onsemi
Description: MOSFET N-CH 1500V 2A TO3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 110W (Tc)
Supplier Device Package: TO-3PB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
Produkt ist nicht verfügbar
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2SK3747 2sk3747-d.pdf
2SK3747
Hersteller: onsemi
Description: MOSFET N-CH 1500V 2A TO3PML
Packaging: Tray
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Supplier Device Package: TO-3PML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±35V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
Produkt ist nicht verfügbar
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2SK3747-MG8
2SK3747-MG8
Hersteller: onsemi
Description: MOSFET N-CH 1500V 2A TO3PML
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Supplier Device Package: TO-3PML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±35V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
Produkt ist nicht verfügbar
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2SK3748 2SK3748.pdf
2SK3748
Hersteller: onsemi
Description: MOSFET N-CH 1500V 4A TO3PML
Packaging: Tray
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 7Ohm @ 2A, 10V
Power Dissipation (Max): 3W (Ta), 65W (Tc)
Supplier Device Package: TO-3PML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
Produkt ist nicht verfügbar
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2SK3796-3-TL-E 2SK3796.pdf
2SK3796-3-TL-E
Hersteller: onsemi
Description: JFET N-CH 10MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SMCP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 100 mW
Resistance - RDS(On): 200 Ohms
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
Produkt ist nicht verfügbar
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2SK4065-DL-E
2SK4065-DL-E
Hersteller: onsemi
Description: MOSFET N-CH 75V 100A SMP-FD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: SMP-FD
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V
Produkt ist nicht verfügbar
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2SK4065-E
2SK4065-E
Hersteller: onsemi
Description: MOSFET N-CH 75V 100A SMP
Packaging: Bag
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: SMP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V
Produkt ist nicht verfügbar
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2SK4066-E
2SK4066-E
Hersteller: onsemi
Description: MOSFET N-CH 60V 100A SMP
Packaging: Bag
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: SMP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
Produkt ist nicht verfügbar
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2SK4087LS 2SK4087LS.pdf
2SK4087LS
Hersteller: onsemi
Description: MOSFET N-CH 600V 9.2A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Produkt ist nicht verfügbar
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2SK4088LS 2SK4088LS_May2013.pdf
2SK4088LS
Hersteller: onsemi
Description: MOSFET N-CH 650V 7.5A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta), 37W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Produkt ist nicht verfügbar
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2SK4089LS 2SK4089LS.pdf
2SK4089LS
Hersteller: onsemi
Description: MOSFET N-CH 650V 8.5A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Produkt ist nicht verfügbar
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2SK4117LS 2SK4117LS.pdf
2SK4117LS
Hersteller: onsemi
Description: MOSFET N-CH 400V 10.4A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 30 V
Produkt ist nicht verfügbar
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