BFL4007 Sanyo
Hersteller: Sanyo
Description: MOSFET N-CH 600V 14/8.7A TO220FI
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-220FI(LS)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 680mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 99+ | 5.14 EUR |
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Technische Details BFL4007 Sanyo
Description: MOSFET N-CH 600V 8.7A TO220FI, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220FI(LS), Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 2W (Ta), 40W (Tc), Rds On (Max) @ Id, Vgs: 680mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V.
Weitere Produktangebote BFL4007
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
BFL4007 | onsemi |
Description: MOSFET N-CH 600V 8.7A TO220FI Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220FI(LS) Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 2W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 680mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Drain to Source Voltage (Vdss): 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
BFL4007 | ON Semiconductor |
MOSFET NCH 10V DRIVE SERIES |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BFL4007 |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 8.7A TO220FI
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FI(LS)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 680mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Description: MOSFET N-CH 600V 8.7A TO220FI
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FI(LS)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 680mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BFL4007 |
|
Hersteller: ON Semiconductor
MOSFET NCH 10V DRIVE SERIES
MOSFET NCH 10V DRIVE SERIES
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH