2SJ661-DL-E onsemi

Description: MOSFET P-CH 60V 38A SMP-FD, Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: SMP-FD, Vgs(th) (Max) @ Id: 2.6V @ 1mA, Power Dissipation (Max): 1.65W (Ta), 65W (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 19A, 10V, Current - Continuous Drain (Id) @ 25°C: 38A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).