| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| FDMC3020DC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 100A; 50W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 100A Power dissipation: 50W Case: PQFN8 On-state resistance: 9.1mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FDMC4D9P20X8 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -47A; Idm: -335A; 40W; PQFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -47A Pulsed drain current: -335A Power dissipation: 40W Case: PQFN8 On-state resistance: 16.4mΩ Mounting: SMD Gate charge: 109nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±12V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FDMC7570S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 40A; Idm: 120A; 59W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 40A Pulsed drain current: 120A Power dissipation: 59W Case: PQFN8 On-state resistance: 2.9mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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NCS20074DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC Type of integrated circuit: operational amplifier Bandwidth: 3MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.35...18V DC; 2.7...36V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 2.4V/μs Integrated circuit features: rail-to-rail output Input offset voltage: 3mV Kind of package: reel; tape Input bias current: 1.5nA Input offset current: 75pA |
auf Bestellung 2423 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NCV20074DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC Type of integrated circuit: operational amplifier Bandwidth: 3MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.35...18V DC; 2.7...36V DC Case: TSSOP14 Operating temperature: -40...125°C Slew rate: 2.4V/μs Integrated circuit features: rail-to-rail output Input offset voltage: 3mV Kind of package: reel; tape Input bias current: 1.5nA Input offset current: 75pA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NCS20074DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC Kind of package: reel; tape Mounting: SMT Type of integrated circuit: operational amplifier Number of channels: quad; 4 Integrated circuit features: rail-to-rail output Case: TSSOP14 Operating temperature: -40...125°C Input offset current: 75pA Input bias current: 1.5nA Input offset voltage: 3mV Voltage supply range: ± 1.35...18V DC; 2.7...36V DC Slew rate: 2.4V/μs Bandwidth: 3MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NCV20074DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC Type of integrated circuit: operational amplifier Bandwidth: 3MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.35...18V DC; 2.7...36V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 2.4V/μs Integrated circuit features: rail-to-rail output Input offset voltage: 3mV Kind of package: reel; tape Input bias current: 1.5nA Input offset current: 75pA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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MBRS410LT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 10V; 4A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 10V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 0.225V Kind of package: reel; tape |
auf Bestellung 883 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FDLL300A | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 125V; 0.5A; SOD80; Ufmax: 1V; Ifsm: 4A; 500mW Type of diode: switching Case: SOD80 Mounting: SMD Max. off-state voltage: 125V Load current: 0.5A Semiconductor structure: single diode Capacitance: 6pF Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Power dissipation: 0.5W Max. load current: 0.6A |
auf Bestellung 1221 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FNB41560 | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26 Mounting: THT Frequency: 20kHz Number of channels: 6 Power dissipation: 34W Operating voltage: 13.5...16.5/0...400V DC Kind of integrated circuit: 3-phase motor controller; IPM Collector-emitter voltage: 600V Technology: Motion SPM® 45 Case: SPMAA-A26 Type of integrated circuit: driver Topology: IGBT three-phase bridge; NTC thermistor Operating temperature: -40...125°C Output current: 15A |
auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FDD4243 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -14A; 42W; DPAK Mounting: SMD Power dissipation: 42W Gate charge: 29nC Polarisation: unipolar Technology: PowerTrench® Drain current: -14A Kind of channel: enhancement Drain-source voltage: -40V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DPAK On-state resistance: 69mΩ |
auf Bestellung 1585 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NCS20071SN2T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; Ch: 1; ±1.35÷18VDC,2.7÷36VDC Type of integrated circuit: operational amplifier Case: TSOP5 Mounting: SMT Operating temperature: -40...125°C Kind of package: reel; tape Input offset voltage: 4.5mV Voltage supply range: ± 1.35...18V DC; 2.7...36V DC Slew rate: 2.8V/μs Bandwidth: 3MHz Integrated circuit features: rail-to-rail output Number of channels: single; 1 |
auf Bestellung 2181 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTTFS002N04CLTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8 Case: WDFN8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 49nC On-state resistance: 2.2mΩ Gate-source voltage: ±20V Power dissipation: 27W Drain current: 142A Drain-source voltage: 40V Pulsed drain current: 706A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NTTFS002N04CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 136A Pulsed drain current: 676A Power dissipation: 27W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NVTFS002N04CLTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8 Case: WDFN8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 49nC On-state resistance: 2.2mΩ Gate-source voltage: ±20V Power dissipation: 27W Drain current: 142A Drain-source voltage: 40V Pulsed drain current: 706A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NVTFS002N04CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 136A Pulsed drain current: 676A Power dissipation: 27W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NVTFWS002N04CLTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFNW8 Case: WDFNW8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 49nC On-state resistance: 2.2mΩ Gate-source voltage: ±20V Power dissipation: 27W Drain current: 142A Drain-source voltage: 40V Pulsed drain current: 706A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NVTFWS002N04CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 136A Pulsed drain current: 676A Power dissipation: 27W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NCV6357MTWATXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; SMD; reel,tape; automotive industry Type of integrated circuit: PMIC Kind of package: reel; tape Mounting: SMD Application: automotive industry Kind of integrated circuit: DC/DC converter |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NCP383LMUAJAATXG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.5÷2.8A; Ch: 2; N-Channel; SMD; uDFN10 Mounting: SMD Supply voltage: 2.7...5.5V DC Active logical level: low Control voltage: 0...5.5V DC Output current: 0.5...2.8A Type of integrated circuit: power switch Kind of output: N-Channel Kind of package: reel; tape Case: uDFN10 Kind of integrated circuit: high-side Number of channels: 2 On-state resistance: 95mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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MMBZ5250BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 20V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Semiconductor structure: single diode Mounting: SMD Case: SOT23 Tolerance: ±5% Kind of package: reel; tape Manufacturer series: MMBZ52xxBLT1G Power dissipation: 0.3W Zener voltage: 20V |
auf Bestellung 5900 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FQD13N10TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.3A Power dissipation: 40W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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NSR0320MW2T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD323; SMD; 23V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD323 Mounting: SMD Max. off-state voltage: 23V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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2N4922G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO225 Kind of package: bulk Mounting: THT Type of transistor: NPN Case: TO225 Collector current: 1A Power dissipation: 30W Current gain: 30...150 Frequency: 3MHz Collector-emitter voltage: 60V Polarisation: bipolar |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MBR2545CTG | ONSEMI |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220-3; Ufmax: 0.72V Mounting: THT Max. forward impulse current: 150A Max. forward voltage: 0.72V Max. off-state voltage: 45V Heatsink thickness: 1.15...1.39mm Load current: 15A x2 Max. load current: 30A Kind of package: tube Semiconductor structure: common cathode; double Case: TO220-3 Type of diode: Schottky rectifying |
auf Bestellung 185 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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HCPL2611 | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 10Mbps; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Schmitt trigger Transfer rate: 10Mbps Case: DIP8 Turn-on time: 50ns Turn-off time: 12ns Slew rate: 2.5kV/μs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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HCPL2611M | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 5kV; 10Mbps; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: logic Insulation voltage: 5kV Transfer rate: 10Mbps Case: DIP8 Turn-on time: 30ns Turn-off time: 30ns Slew rate: 15kV/μs Max. off-state voltage: 5V Output voltage: -500mV...7V Manufacturer series: HCPL2611M |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MC74AC374DWG | ONSEMI |
Category: Flip-Flops Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20 Type of integrated circuit: digital Kind of integrated circuit: 3-state; D flip-flop; octal Case: SOIC20 Number of channels: 8 Mounting: SMD Operating temperature: -40...85°C Technology: CMOS Kind of package: tube Family: AC Supply voltage: 2...6V DC Manufacturer series: AC Kind of output: 3-state |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MC74AC374DWR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20 Type of integrated circuit: digital Kind of integrated circuit: 3-state; D flip-flop; octal Case: SOIC20 Number of channels: 8 Mounting: SMD Operating temperature: -40...85°C Technology: CMOS Kind of package: reel; tape Family: AC Supply voltage: 2...6V DC Manufacturer series: AC Kind of output: 3-state |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NXH600N65L4Q2F2SG | ONSEMI |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 600A; PIM41; SiC Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: NTC thermistor; three-level inverter; single-phase Max. off-state voltage: 650V Collector current: 600A Case: PIM41 Application: for UPS; Inverter Gate-emitter voltage: ±20V Technology: SiC Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 36 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NXH160T120L2Q2F2S1G | ONSEMI |
Category: IGBT modules Description: Module: IGBT; diode/transistor; 3-level inverter SPLIT-TNPC Collector current: 181A Case: PIM56 Gate-emitter voltage: ±20V Pulsed collector current: 543A Topology: 3-level inverter SPLIT-TNPC Type of semiconductor module: IGBT Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Semiconductor structure: diode/transistor |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NXH200T120H3Q2F2STNG | ONSEMI |
Category: IGBT modules Description: Module: IGBT; Ic: 330A; PIM Case: PIM Collector current: 330A Type of semiconductor module: IGBT |
auf Bestellung 396 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 12 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NXH200T120H3Q2F2SG | ONSEMI |
Category: IGBT modules Description: Module: IGBT; Ic: 330A; PIM Case: PIM Collector current: 330A Type of semiconductor module: IGBT |
auf Bestellung 192 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 12 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NXH450B100H4Q2F2SG | ONSEMI |
Category: IGBT modules Description: Module: IGBT; Ic: 101A; PIM Gate-emitter voltage: ±20V Collector current: 101A Type of semiconductor module: IGBT Case: PIM |
auf Bestellung 216 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 12 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NTMFS0D6N03CT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 433A; Idm: 900A; 200W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 433A Pulsed drain current: 900A Power dissipation: 200W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 620µΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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MUN5112DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 22kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
auf Bestellung 2279 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NCP1203P60G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; SMPS; tube Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.25A Mounting: THT Case: DIP8 Topology: flyback Number of channels: 1 Operating temperature: 0...125°C Operating voltage: 7.8...16V DC Kind of package: tube Application: SMPS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FSDM0465REWDTU | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 1.4A; 650V; 66kHz; Ch: 1 Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 1.4A Output voltage: 650V Frequency: 66kHz Number of channels: 1 Case: TO220F-6L Mounting: THT Operating temperature: -25...85°C Topology: flyback Input voltage: 85...265V On-state resistance: 2.6Ω Duty cycle factor: 77...87% Power: 48W Application: SMPS Operating voltage: 8...19V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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NDP6060 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 48A; Idm: 144A; 100W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 48A Power dissipation: 100W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 25µΩ Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 144A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MUN5233T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Current gain: 200 |
auf Bestellung 19924 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTMFS4C302NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 230A; Idm: 900A; 96W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 230A Pulsed drain current: 900A Power dissipation: 96W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 1.15mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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MJW18020G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 450V; 30A; 250W; TO247-3 Frequency: 13MHz Mounting: THT Collector-emitter voltage: 450V Power dissipation: 250W Polarisation: bipolar Type of transistor: NPN Current gain: 14...34 Kind of package: tube Case: TO247-3 Collector current: 30A |
auf Bestellung 66 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MJF18004G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 450V; 5A; 35W; TO220FP Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 450V Collector current: 5A Power dissipation: 35W Case: TO220FP Mounting: THT Kind of package: tube Current gain: 14...34 Frequency: 13MHz |
auf Bestellung 56 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NCS20092DMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 350kHz; Ch: 2; 1.8÷5.5VDC; Micro8; 4mV Operating temperature: -40...125°C Case: Micro8 Type of integrated circuit: operational amplifier Input offset current: 1pA Input bias current: 1pA Input offset voltage: 4mV Slew rate: 0.15V/μs Voltage supply range: 1.8...5.5V DC Bandwidth: 350kHz Kind of package: reel; tape Number of channels: dual; 2 Mounting: SMT Integrated circuit features: low power; rail-to-rail |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NCS20092DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 350kHz; Ch: 2; 1.8÷5.5VDC; SO8; 4mV Operating temperature: -40...125°C Case: SO8 Type of integrated circuit: operational amplifier Input offset current: 1pA Input bias current: 1pA Input offset voltage: 4mV Slew rate: 0.15V/μs Voltage supply range: 1.8...5.5V DC Bandwidth: 350kHz Kind of package: reel; tape Number of channels: dual; 2 Mounting: SMT Integrated circuit features: low power; rail-to-rail |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NCS20092DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 350kHz; Ch: 2; 1.8÷5.5VDC; TSSOP8; 4mV Operating temperature: -40...125°C Case: TSSOP8 Type of integrated circuit: operational amplifier Input offset current: 1pA Input bias current: 1pA Input offset voltage: 4mV Slew rate: 0.15V/μs Voltage supply range: 1.8...5.5V DC Bandwidth: 350kHz Kind of package: reel; tape Number of channels: dual; 2 Mounting: SMT Integrated circuit features: low power; rail-to-rail |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| LE25U20AMB-AH | ONSEMI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2MbFLASH; Flash: 256kx8bit; 30MHz; 2.3÷3.6V Operating voltage: 2.3...3.6V Mounting: SMD Case: SOIC8 Operating temperature: -40...85°C Kind of memory: NOR Flash memory organisation: 256kx8bit Type of integrated circuit: FLASH memory Memory: 2Mb FLASH Operating frequency: 30MHz Kind of interface: serial |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| LE25U20AQGTXG | ONSEMI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2MbFLASH; Flash: 256kx8bit; 30MHz; 2.3÷3.6V Operating voltage: 2.3...3.6V Mounting: SMD Case: WDFN8 Operating temperature: -40...85°C Kind of memory: NOR Flash memory organisation: 256kx8bit Type of integrated circuit: FLASH memory Memory: 2Mb FLASH Operating frequency: 30MHz Kind of interface: serial |
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Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
FSQ0765RSUDTU | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller,resonant mode controller; 2.28A; 650V Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller; resonant mode controller Output current: 2.28A Output voltage: 650V Frequency: 66.7kHz Number of channels: 1 Case: TO220-6 Mounting: THT Operating temperature: -25...85°C Topology: flyback Input voltage: 85...265V On-state resistance: 1.6Ω Power: 70W Operating voltage: 8...19V DC |
auf Bestellung 308 Stücke: Lieferzeit 14-21 Tag (e) |
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 |
MC14018BDG | ONSEMI |
Category: Counters/dividers Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; HEF4000B; tube Mounting: SMD Operating temperature: -55...125°C Kind of package: tube Case: SOIC16 Family: HEF4000B Kind of integrated circuit: counter; divide by N Supply voltage: 3...18V DC Type of integrated circuit: digital Technology: CMOS |
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| FSA553UCX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer; SPST; Ch: 2; WLCSP9; 1.5÷3V Type of integrated circuit: analog switch Number of channels: 2 Mounting: SMD Case: WLCSP9 Operating temperature: -40...85°C Supply voltage: 1.5...3V Kind of integrated circuit: demultiplexer Output configuration: SPST |
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Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NTMFS5C410NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 56W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 330A Pulsed drain current: 900A Power dissipation: 56W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 820µΩ Mounting: SMD Gate charge: 143nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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SBC847BWT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
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 |
BC847CWT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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|
SBC847CWT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
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|
|
SBC847CWT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
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 |
NCV1117DT12RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 12V; 1A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 12V Output current: 1A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
auf Bestellung 236 Stücke: Lieferzeit 14-21 Tag (e) |
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NCV1117DTARKG | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.5÷12V; 1A; DPAK Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.2V Output voltage: 1.5...12V Output current: 1A Case: DPAK Mounting: SMD Manufacturer series: NCV1117 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.25...20V Application: automotive industry |
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| NCV1117DT50RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 1A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
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| NCV1117DT18RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; DPAK; SMD; Ch: 1 Mounting: SMD Application: automotive industry Output current: 1A Number of channels: 1 Output voltage: 1.8V Case: DPAK Kind of voltage regulator: fixed; LDO; linear Kind of package: reel; tape Type of integrated circuit: voltage regulator |
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Im Einkaufswagen Stück im Wert von UAH |
| FDMC3020DC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 100A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 50W
Case: PQFN8
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 100A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 50W
Case: PQFN8
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
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| FDMC4D9P20X8 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -47A; Idm: -335A; 40W; PQFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -47A
Pulsed drain current: -335A
Power dissipation: 40W
Case: PQFN8
On-state resistance: 16.4mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -47A; Idm: -335A; 40W; PQFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -47A
Pulsed drain current: -335A
Power dissipation: 40W
Case: PQFN8
On-state resistance: 16.4mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
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| FDMC7570S |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; Idm: 120A; 59W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Pulsed drain current: 120A
Power dissipation: 59W
Case: PQFN8
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; Idm: 120A; 59W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Pulsed drain current: 120A
Power dissipation: 59W
Case: PQFN8
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NCS20074DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 2.4V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 1.5nA
Input offset current: 75pA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 2.4V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 1.5nA
Input offset current: 75pA
auf Bestellung 2423 Stücke:
Lieferzeit 14-21 Tag (e)
| NCV20074DTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 2.4V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 1.5nA
Input offset current: 75pA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 2.4V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 1.5nA
Input offset current: 75pA
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| NCS20074DTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Integrated circuit features: rail-to-rail output
Case: TSSOP14
Operating temperature: -40...125°C
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Integrated circuit features: rail-to-rail output
Case: TSSOP14
Operating temperature: -40...125°C
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| NCV20074DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 2.4V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 1.5nA
Input offset current: 75pA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 2.4V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 1.5nA
Input offset current: 75pA
Produkt ist nicht verfügbar
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| MBRS410LT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 10V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 10V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.225V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 10V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 10V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.225V
Kind of package: reel; tape
auf Bestellung 883 Stücke:
Lieferzeit 14-21 Tag (e)
| FDLL300A |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 125V; 0.5A; SOD80; Ufmax: 1V; Ifsm: 4A; 500mW
Type of diode: switching
Case: SOD80
Mounting: SMD
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 6pF
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Power dissipation: 0.5W
Max. load current: 0.6A
Category: SMD universal diodes
Description: Diode: switching; SMD; 125V; 0.5A; SOD80; Ufmax: 1V; Ifsm: 4A; 500mW
Type of diode: switching
Case: SOD80
Mounting: SMD
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 6pF
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Power dissipation: 0.5W
Max. load current: 0.6A
auf Bestellung 1221 Stücke:
Lieferzeit 14-21 Tag (e)
| FNB41560 |
|
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Mounting: THT
Frequency: 20kHz
Number of channels: 6
Power dissipation: 34W
Operating voltage: 13.5...16.5/0...400V DC
Kind of integrated circuit: 3-phase motor controller; IPM
Collector-emitter voltage: 600V
Technology: Motion SPM® 45
Case: SPMAA-A26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Operating temperature: -40...125°C
Output current: 15A
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Mounting: THT
Frequency: 20kHz
Number of channels: 6
Power dissipation: 34W
Operating voltage: 13.5...16.5/0...400V DC
Kind of integrated circuit: 3-phase motor controller; IPM
Collector-emitter voltage: 600V
Technology: Motion SPM® 45
Case: SPMAA-A26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Operating temperature: -40...125°C
Output current: 15A
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
| FDD4243 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -14A; 42W; DPAK
Mounting: SMD
Power dissipation: 42W
Gate charge: 29nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -14A
Kind of channel: enhancement
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 69mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -14A; 42W; DPAK
Mounting: SMD
Power dissipation: 42W
Gate charge: 29nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -14A
Kind of channel: enhancement
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 69mΩ
auf Bestellung 1585 Stücke:
Lieferzeit 14-21 Tag (e)
| NCS20071SN2T1G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Case: TSOP5
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset voltage: 4.5mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.8V/μs
Bandwidth: 3MHz
Integrated circuit features: rail-to-rail output
Number of channels: single; 1
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Case: TSOP5
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset voltage: 4.5mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.8V/μs
Bandwidth: 3MHz
Integrated circuit features: rail-to-rail output
Number of channels: single; 1
auf Bestellung 2181 Stücke:
Lieferzeit 14-21 Tag (e)
| NTTFS002N04CLTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Case: WDFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 2.2mΩ
Gate-source voltage: ±20V
Power dissipation: 27W
Drain current: 142A
Drain-source voltage: 40V
Pulsed drain current: 706A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Case: WDFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 2.2mΩ
Gate-source voltage: ±20V
Power dissipation: 27W
Drain current: 142A
Drain-source voltage: 40V
Pulsed drain current: 706A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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| NTTFS002N04CTAG |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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| NVTFS002N04CLTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Case: WDFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 2.2mΩ
Gate-source voltage: ±20V
Power dissipation: 27W
Drain current: 142A
Drain-source voltage: 40V
Pulsed drain current: 706A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Case: WDFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 2.2mΩ
Gate-source voltage: ±20V
Power dissipation: 27W
Drain current: 142A
Drain-source voltage: 40V
Pulsed drain current: 706A
Kind of package: reel; tape
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| NVTFS002N04CTAG |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| NVTFWS002N04CLTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFNW8
Case: WDFNW8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 2.2mΩ
Gate-source voltage: ±20V
Power dissipation: 27W
Drain current: 142A
Drain-source voltage: 40V
Pulsed drain current: 706A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFNW8
Case: WDFNW8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 2.2mΩ
Gate-source voltage: ±20V
Power dissipation: 27W
Drain current: 142A
Drain-source voltage: 40V
Pulsed drain current: 706A
Kind of package: reel; tape
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| NVTFWS002N04CTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| NCV6357MTWATXG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape; automotive industry
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
Application: automotive industry
Kind of integrated circuit: DC/DC converter
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape; automotive industry
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
Application: automotive industry
Kind of integrated circuit: DC/DC converter
Produkt ist nicht verfügbar
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| NCP383LMUAJAATXG |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.8A; Ch: 2; N-Channel; SMD; uDFN10
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
Output current: 0.5...2.8A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: uDFN10
Kind of integrated circuit: high-side
Number of channels: 2
On-state resistance: 95mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.8A; Ch: 2; N-Channel; SMD; uDFN10
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
Output current: 0.5...2.8A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: uDFN10
Kind of integrated circuit: high-side
Number of channels: 2
On-state resistance: 95mΩ
Produkt ist nicht verfügbar
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| MMBZ5250BLT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Tolerance: ±5%
Kind of package: reel; tape
Manufacturer series: MMBZ52xxBLT1G
Power dissipation: 0.3W
Zener voltage: 20V
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Tolerance: ±5%
Kind of package: reel; tape
Manufacturer series: MMBZ52xxBLT1G
Power dissipation: 0.3W
Zener voltage: 20V
auf Bestellung 5900 Stücke:
Lieferzeit 14-21 Tag (e)
| FQD13N10TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| NSR0320MW2T1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 23V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 23V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 23V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 23V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| 2N4922G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO225
Kind of package: bulk
Mounting: THT
Type of transistor: NPN
Case: TO225
Collector current: 1A
Power dissipation: 30W
Current gain: 30...150
Frequency: 3MHz
Collector-emitter voltage: 60V
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO225
Kind of package: bulk
Mounting: THT
Type of transistor: NPN
Case: TO225
Collector current: 1A
Power dissipation: 30W
Current gain: 30...150
Frequency: 3MHz
Collector-emitter voltage: 60V
Polarisation: bipolar
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
| MBR2545CTG |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220-3; Ufmax: 0.72V
Mounting: THT
Max. forward impulse current: 150A
Max. forward voltage: 0.72V
Max. off-state voltage: 45V
Heatsink thickness: 1.15...1.39mm
Load current: 15A x2
Max. load current: 30A
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220-3
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220-3; Ufmax: 0.72V
Mounting: THT
Max. forward impulse current: 150A
Max. forward voltage: 0.72V
Max. off-state voltage: 45V
Heatsink thickness: 1.15...1.39mm
Load current: 15A x2
Max. load current: 30A
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220-3
Type of diode: Schottky rectifying
auf Bestellung 185 Stücke:
Lieferzeit 14-21 Tag (e)
| HCPL2611 |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 2.5kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 2.5kV/μs
Produkt ist nicht verfügbar
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| HCPL2611M |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 5kV; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 30ns
Turn-off time: 30ns
Slew rate: 15kV/μs
Max. off-state voltage: 5V
Output voltage: -500mV...7V
Manufacturer series: HCPL2611M
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 5kV; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 30ns
Turn-off time: 30ns
Slew rate: 15kV/μs
Max. off-state voltage: 5V
Output voltage: -500mV...7V
Manufacturer series: HCPL2611M
Produkt ist nicht verfügbar
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| MC74AC374DWG |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Case: SOIC20
Number of channels: 8
Mounting: SMD
Operating temperature: -40...85°C
Technology: CMOS
Kind of package: tube
Family: AC
Supply voltage: 2...6V DC
Manufacturer series: AC
Kind of output: 3-state
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Case: SOIC20
Number of channels: 8
Mounting: SMD
Operating temperature: -40...85°C
Technology: CMOS
Kind of package: tube
Family: AC
Supply voltage: 2...6V DC
Manufacturer series: AC
Kind of output: 3-state
Produkt ist nicht verfügbar
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| MC74AC374DWR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Case: SOIC20
Number of channels: 8
Mounting: SMD
Operating temperature: -40...85°C
Technology: CMOS
Kind of package: reel; tape
Family: AC
Supply voltage: 2...6V DC
Manufacturer series: AC
Kind of output: 3-state
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Case: SOIC20
Number of channels: 8
Mounting: SMD
Operating temperature: -40...85°C
Technology: CMOS
Kind of package: reel; tape
Family: AC
Supply voltage: 2...6V DC
Manufacturer series: AC
Kind of output: 3-state
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| NXH600N65L4Q2F2SG |
|
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 600A; PIM41; SiC
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Collector current: 600A
Case: PIM41
Application: for UPS; Inverter
Gate-emitter voltage: ±20V
Technology: SiC
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 600A; PIM41; SiC
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Collector current: 600A
Case: PIM41
Application: for UPS; Inverter
Gate-emitter voltage: ±20V
Technology: SiC
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 36 Stücke
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| NXH160T120L2Q2F2S1G |
|
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; diode/transistor; 3-level inverter SPLIT-TNPC
Collector current: 181A
Case: PIM56
Gate-emitter voltage: ±20V
Pulsed collector current: 543A
Topology: 3-level inverter SPLIT-TNPC
Type of semiconductor module: IGBT
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Category: IGBT modules
Description: Module: IGBT; diode/transistor; 3-level inverter SPLIT-TNPC
Collector current: 181A
Case: PIM56
Gate-emitter voltage: ±20V
Pulsed collector current: 543A
Topology: 3-level inverter SPLIT-TNPC
Type of semiconductor module: IGBT
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Produkt ist nicht verfügbar
Mindestbestellmenge: 12 Stücke
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| NXH200T120H3Q2F2STNG |
|
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; Ic: 330A; PIM
Case: PIM
Collector current: 330A
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; Ic: 330A; PIM
Case: PIM
Collector current: 330A
Type of semiconductor module: IGBT
auf Bestellung 396 Stücke:
Lieferzeit 14-21 Tag (e)
| NXH200T120H3Q2F2SG |
|
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; Ic: 330A; PIM
Case: PIM
Collector current: 330A
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; Ic: 330A; PIM
Case: PIM
Collector current: 330A
Type of semiconductor module: IGBT
auf Bestellung 192 Stücke:
Lieferzeit 14-21 Tag (e)
| NXH450B100H4Q2F2SG |
|
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; Ic: 101A; PIM
Gate-emitter voltage: ±20V
Collector current: 101A
Type of semiconductor module: IGBT
Case: PIM
Category: IGBT modules
Description: Module: IGBT; Ic: 101A; PIM
Gate-emitter voltage: ±20V
Collector current: 101A
Type of semiconductor module: IGBT
Case: PIM
auf Bestellung 216 Stücke:
Lieferzeit 14-21 Tag (e)
| NTMFS0D6N03CT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 433A; Idm: 900A; 200W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 433A
Pulsed drain current: 900A
Power dissipation: 200W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 620µΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 433A; Idm: 900A; 200W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 433A
Pulsed drain current: 900A
Power dissipation: 200W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 620µΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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| MUN5112DW1T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 22kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 22kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 2279 Stücke:
Lieferzeit 14-21 Tag (e)
| NCP1203P60G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; SMPS; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Mounting: THT
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: 0...125°C
Operating voltage: 7.8...16V DC
Kind of package: tube
Application: SMPS
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; SMPS; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Mounting: THT
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: 0...125°C
Operating voltage: 7.8...16V DC
Kind of package: tube
Application: SMPS
Produkt ist nicht verfügbar
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| FSDM0465REWDTU |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1.4A; 650V; 66kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1.4A
Output voltage: 650V
Frequency: 66kHz
Number of channels: 1
Case: TO220F-6L
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 2.6Ω
Duty cycle factor: 77...87%
Power: 48W
Application: SMPS
Operating voltage: 8...19V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1.4A; 650V; 66kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1.4A
Output voltage: 650V
Frequency: 66kHz
Number of channels: 1
Case: TO220F-6L
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 2.6Ω
Duty cycle factor: 77...87%
Power: 48W
Application: SMPS
Operating voltage: 8...19V DC
Produkt ist nicht verfügbar
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| NDP6060 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; Idm: 144A; 100W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 25µΩ
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 144A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; Idm: 144A; 100W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 25µΩ
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 144A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| MUN5233T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 200
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 200
auf Bestellung 19924 Stücke:
Lieferzeit 14-21 Tag (e)
| NTMFS4C302NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 230A; Idm: 900A; 96W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 230A
Pulsed drain current: 900A
Power dissipation: 96W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 230A; Idm: 900A; 96W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 230A
Pulsed drain current: 900A
Power dissipation: 96W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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Stück im Wert von UAH
| MJW18020G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 30A; 250W; TO247-3
Frequency: 13MHz
Mounting: THT
Collector-emitter voltage: 450V
Power dissipation: 250W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 14...34
Kind of package: tube
Case: TO247-3
Collector current: 30A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 30A; 250W; TO247-3
Frequency: 13MHz
Mounting: THT
Collector-emitter voltage: 450V
Power dissipation: 250W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 14...34
Kind of package: tube
Case: TO247-3
Collector current: 30A
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
| MJF18004G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 35W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 5A
Power dissipation: 35W
Case: TO220FP
Mounting: THT
Kind of package: tube
Current gain: 14...34
Frequency: 13MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 35W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 5A
Power dissipation: 35W
Case: TO220FP
Mounting: THT
Kind of package: tube
Current gain: 14...34
Frequency: 13MHz
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
| NCS20092DMR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 2; 1.8÷5.5VDC; Micro8; 4mV
Operating temperature: -40...125°C
Case: Micro8
Type of integrated circuit: operational amplifier
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
Kind of package: reel; tape
Number of channels: dual; 2
Mounting: SMT
Integrated circuit features: low power; rail-to-rail
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 2; 1.8÷5.5VDC; Micro8; 4mV
Operating temperature: -40...125°C
Case: Micro8
Type of integrated circuit: operational amplifier
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
Kind of package: reel; tape
Number of channels: dual; 2
Mounting: SMT
Integrated circuit features: low power; rail-to-rail
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| NCS20092DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 2; 1.8÷5.5VDC; SO8; 4mV
Operating temperature: -40...125°C
Case: SO8
Type of integrated circuit: operational amplifier
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
Kind of package: reel; tape
Number of channels: dual; 2
Mounting: SMT
Integrated circuit features: low power; rail-to-rail
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 2; 1.8÷5.5VDC; SO8; 4mV
Operating temperature: -40...125°C
Case: SO8
Type of integrated circuit: operational amplifier
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
Kind of package: reel; tape
Number of channels: dual; 2
Mounting: SMT
Integrated circuit features: low power; rail-to-rail
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| NCS20092DTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 2; 1.8÷5.5VDC; TSSOP8; 4mV
Operating temperature: -40...125°C
Case: TSSOP8
Type of integrated circuit: operational amplifier
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
Kind of package: reel; tape
Number of channels: dual; 2
Mounting: SMT
Integrated circuit features: low power; rail-to-rail
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 2; 1.8÷5.5VDC; TSSOP8; 4mV
Operating temperature: -40...125°C
Case: TSSOP8
Type of integrated circuit: operational amplifier
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
Kind of package: reel; tape
Number of channels: dual; 2
Mounting: SMT
Integrated circuit features: low power; rail-to-rail
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| LE25U20AMB-AH |
|
Hersteller: ONSEMI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; Flash: 256kx8bit; 30MHz; 2.3÷3.6V
Operating voltage: 2.3...3.6V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Kind of memory: NOR
Flash memory organisation: 256kx8bit
Type of integrated circuit: FLASH memory
Memory: 2Mb FLASH
Operating frequency: 30MHz
Kind of interface: serial
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; Flash: 256kx8bit; 30MHz; 2.3÷3.6V
Operating voltage: 2.3...3.6V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Kind of memory: NOR
Flash memory organisation: 256kx8bit
Type of integrated circuit: FLASH memory
Memory: 2Mb FLASH
Operating frequency: 30MHz
Kind of interface: serial
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| LE25U20AQGTXG |
|
Hersteller: ONSEMI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; Flash: 256kx8bit; 30MHz; 2.3÷3.6V
Operating voltage: 2.3...3.6V
Mounting: SMD
Case: WDFN8
Operating temperature: -40...85°C
Kind of memory: NOR
Flash memory organisation: 256kx8bit
Type of integrated circuit: FLASH memory
Memory: 2Mb FLASH
Operating frequency: 30MHz
Kind of interface: serial
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2MbFLASH; Flash: 256kx8bit; 30MHz; 2.3÷3.6V
Operating voltage: 2.3...3.6V
Mounting: SMD
Case: WDFN8
Operating temperature: -40...85°C
Kind of memory: NOR
Flash memory organisation: 256kx8bit
Type of integrated circuit: FLASH memory
Memory: 2Mb FLASH
Operating frequency: 30MHz
Kind of interface: serial
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| FSQ0765RSUDTU |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller,resonant mode controller; 2.28A; 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller; resonant mode controller
Output current: 2.28A
Output voltage: 650V
Frequency: 66.7kHz
Number of channels: 1
Case: TO220-6
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 1.6Ω
Power: 70W
Operating voltage: 8...19V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller,resonant mode controller; 2.28A; 650V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller; resonant mode controller
Output current: 2.28A
Output voltage: 650V
Frequency: 66.7kHz
Number of channels: 1
Case: TO220-6
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 1.6Ω
Power: 70W
Operating voltage: 8...19V DC
auf Bestellung 308 Stücke:
Lieferzeit 14-21 Tag (e)
| MC14018BDG |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; HEF4000B; tube
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: tube
Case: SOIC16
Family: HEF4000B
Kind of integrated circuit: counter; divide by N
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Technology: CMOS
Category: Counters/dividers
Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; HEF4000B; tube
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: tube
Case: SOIC16
Family: HEF4000B
Kind of integrated circuit: counter; divide by N
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Technology: CMOS
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
| FSA553UCX |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer; SPST; Ch: 2; WLCSP9; 1.5÷3V
Type of integrated circuit: analog switch
Number of channels: 2
Mounting: SMD
Case: WLCSP9
Operating temperature: -40...85°C
Supply voltage: 1.5...3V
Kind of integrated circuit: demultiplexer
Output configuration: SPST
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer; SPST; Ch: 2; WLCSP9; 1.5÷3V
Type of integrated circuit: analog switch
Number of channels: 2
Mounting: SMD
Case: WLCSP9
Operating temperature: -40...85°C
Supply voltage: 1.5...3V
Kind of integrated circuit: demultiplexer
Output configuration: SPST
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| NTMFS5C410NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 56W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 56W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 56W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 56W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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| SBC847BWT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)
| BC847CWT3G |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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Mindestbestellmenge: 10000 Stücke
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| SBC847CWT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| SBC847CWT3G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| NCV1117DT12RKG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 12V; 1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 12V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 12V; 1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 12V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
auf Bestellung 236 Stücke:
Lieferzeit 14-21 Tag (e)
| NCV1117DTARKG |
|
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.5÷12V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.5...12V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: NCV1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.25...20V
Application: automotive industry
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.5÷12V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.5...12V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: NCV1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.25...20V
Application: automotive industry
auf Bestellung 1336 Stücke:
Lieferzeit 14-21 Tag (e)
| NCV1117DT50RKG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| NCV1117DT18RKG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; DPAK; SMD; Ch: 1
Mounting: SMD
Application: automotive industry
Output current: 1A
Number of channels: 1
Output voltage: 1.8V
Case: DPAK
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; DPAK; SMD; Ch: 1
Mounting: SMD
Application: automotive industry
Output current: 1A
Number of channels: 1
Output voltage: 1.8V
Case: DPAK
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
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