Foto | Bezeichnung | Hersteller | Beschreibung |
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NSI45015WT1G | ONSEMI |
![]() Description: IC: driver; current regulator,LED driver; SOD123; 45VDC; 460mW Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SOD123 Mounting: SMD Operating temperature: -55...150°C Operating voltage: 45V DC Power dissipation: 0.46W Operating current: 15mA |
auf Bestellung 1019 Stücke: Lieferzeit 14-21 Tag (e) |
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MURS120T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Max. forward voltage: 0.875V Max. forward impulse current: 40A Kind of package: reel; tape |
auf Bestellung 2703 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74AC245DWG | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; AC; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: SO20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 80µA Manufacturer series: AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MJ15024G | ONSEMI |
![]() ![]() Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 16A Power dissipation: 250W Case: TO3 Mounting: THT Kind of package: in-tray |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT4401LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
Produkt ist nicht verfügbar |
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FQAF16N50 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.15A Power dissipation: 110W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MBR0530T1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.43V Max. forward impulse current: 5.5A Kind of package: reel; tape |
auf Bestellung 7509 Stücke: Lieferzeit 14-21 Tag (e) |
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MBR0530T3G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.43V Max. forward impulse current: 5.5A Kind of package: reel; tape |
auf Bestellung 1640 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33035DWG | ONSEMI |
![]() Description: IC: driver; brushless motor controller; SO24; Ch: 3; Usup: 0÷40VDC Operating temperature: -40...85°C Type of integrated circuit: driver Number of channels: 3 Kind of package: tube Kind of integrated circuit: brushless motor controller Mounting: SMD Case: SO24 Supply voltage: 0...40V DC Operating voltage: 10...30V DC |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC3042M | ONSEMI |
![]() Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC304XM; 1kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Mounting: THT Number of channels: 1 Manufacturer series: MOC304XM Slew rate: 1kV/μs |
auf Bestellung 482 Stücke: Lieferzeit 14-21 Tag (e) |
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NUD4001DR2G | ONSEMI |
![]() ![]() Description: IC: driver; LED driver; SO8; 500mA; 28V; Ch: 1; PWM Type of integrated circuit: driver Kind of integrated circuit: LED driver Output current: 0.5A Case: SO8 Mounting: SMD Number of channels: 1 Operating temperature: -40...125°C Integrated circuit features: PWM Output voltage: 28V |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD4001NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W Mounting: SMD Case: SC70-6; SC88; SOT363 Power dissipation: 0.272W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 0.18A On-state resistance: 1.5Ω Type of transistor: N-MOSFET x2 |
auf Bestellung 2040 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTJD4001NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W Mounting: SMD Case: SC70-6; SC88; SOT363 Power dissipation: 0.272W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 0.18A On-state resistance: 1.5Ω Type of transistor: N-MOSFET x2 |
auf Bestellung 2910 Stücke: Lieferzeit 14-21 Tag (e) |
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6N138M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP8; 6N138M Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV CTR@If: 300-1600%@1.6mA Case: DIP8 Manufacturer series: 6N138M |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMBFJ201 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 200uA; 0.35W; SOT23; Igt: 50mA Gate current: 50mA Drain current: 200µA Type of transistor: N-JFET Power dissipation: 0.35W Polarisation: unipolar Kind of package: reel; tape Gate-source voltage: -40V Mounting: SMD Case: SOT23 |
auf Bestellung 2852 Stücke: Lieferzeit 14-21 Tag (e) |
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CAT24C04HU4I-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FQD2N90TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 6.8A Mounting: SMD Case: DPAK Drain-source voltage: 900V Drain current: 1.08A On-state resistance: 7.2Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
FQU2N90TU-AM002 | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: tube Gate charge: 15nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 6.8A Mounting: THT Case: IPAK Drain-source voltage: 900V Drain current: 1.08A On-state resistance: 7.2Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FQU2N90TU-WS | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: tube Gate charge: 15nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 6.8A Mounting: THT Case: IPAK Drain-source voltage: 900V Drain current: 1.08A On-state resistance: 7.2Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NCP431ACLPRAG | ONSEMI |
![]() Description: IC: voltage reference source; 2.5V; ±1%; TO92; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: 0...70°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.5...36V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCP431ACSNT1G | ONSEMI |
![]() Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: 0...70°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.5...36V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FCPF11N60 | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 52nC |
auf Bestellung 83 Stücke: Lieferzeit 14-21 Tag (e) |
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FCPF11N60F | ONSEMI |
![]() Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 52nC Pulsed drain current: 33A |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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FCPF11N60T | ONSEMI |
![]() Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 7A; Idm: 33A; 36W Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 52nC Pulsed drain current: 33A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FCP22N60N | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 205W; TO220AB Type of transistor: N-MOSFET Technology: SuperMOS® Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 205W Case: TO220AB Gate-source voltage: ±45V On-state resistance: 0.165Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDD6637 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK Case: DPAK Drain-source voltage: -35V Drain current: -55A On-state resistance: 19mΩ Type of transistor: P-MOSFET Power dissipation: 57W Polarisation: unipolar Kind of package: reel; tape Gate charge: 35nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±25V Mounting: SMD |
auf Bestellung 2604 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBTH81 | ONSEMI |
![]() Description: Transistor: PNP; bipolar; RF; 20V; 50mA; 225mW; SOT23 Frequency: 600MHz Collector-emitter voltage: 20V Collector current: 50mA Type of transistor: PNP Power dissipation: 0.225W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: RF Mounting: SMD Case: SOT23 |
auf Bestellung 1513 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HC86M | ONSEMI |
![]() Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Operating temperature: -40...85°C Case: SO14 Number of inputs: 2 Supply voltage: 2...6V DC Number of channels: quad; 4 Quiescent current: 20µA Kind of package: tube Kind of gate: XOR Technology: CMOS Family: HC Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MJH11020G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3 Case: TO247-3 Collector-emitter voltage: 200V Collector current: 15A Type of transistor: NPN Power dissipation: 150W Polarisation: bipolar Kind of package: tube Kind of transistor: Darlington Mounting: THT |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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MJH11021G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3 Case: TO247-3 Collector-emitter voltage: 250V Collector current: 15A Type of transistor: PNP Power dissipation: 150W Polarisation: bipolar Kind of package: tube Kind of transistor: Darlington Mounting: THT |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
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MJH11022G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3 Case: TO247-3 Collector-emitter voltage: 250V Collector current: 15A Type of transistor: NPN Power dissipation: 150W Polarisation: bipolar Kind of package: tube Kind of transistor: Darlington Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MJD127T4G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 20W Case: DPAK Mounting: SMD |
auf Bestellung 2075 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C10 | ONSEMI |
![]() Description: Diode: Zener; 1.3W; 10V; bulk; DO41; single diode; 0.5uA; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 10V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX85C Leakage current: 0.5µA |
auf Bestellung 84 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C15 | ONSEMI |
![]() Description: Diode: Zener; 1.3W; 15V; bulk; DO41; single diode; 0.5uA; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 15V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX85C Leakage current: 0.5µA |
auf Bestellung 6224 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C16 | ONSEMI |
![]() Description: Diode: Zener; 1.3W; 16V; bulk; DO41; single diode; 0.5uA; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 16V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: BZX85C Kind of package: bulk |
auf Bestellung 146 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBTA06LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 10298 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HC32MX | ONSEMI |
![]() Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 10ns Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Family: HC Kind of package: reel; tape Technology: CMOS Operating temperature: -40...85°C Delay time: 10ns |
Produkt ist nicht verfügbar |
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MM74HC32MTCX | ONSEMI |
![]() Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Family: HC Kind of package: reel; tape Technology: CMOS Operating temperature: -40...85°C Delay time: 10ns |
Produkt ist nicht verfügbar |
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MM74HCT74MTCX | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS,TTL; HCT; SMD; TSSOP14 Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HCT Manufacturer series: HCT Technology: CMOS; TTL Number of inputs: 4 |
Produkt ist nicht verfügbar |
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MM74HC86MX | ONSEMI |
![]() Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 9ns Type of integrated circuit: digital Operating temperature: -40...85°C Case: SO14 Number of inputs: 2 Supply voltage: 2...6V DC Number of channels: quad; 4 Delay time: 9ns Kind of package: reel; tape Kind of gate: XOR Technology: CMOS Family: HC Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
MM74HC86MTCX | ONSEMI |
![]() Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC Type of integrated circuit: digital Operating temperature: -55...125°C Case: TSSOP14 Number of inputs: 2 Supply voltage: 2...6V DC Number of channels: 4 Kind of package: reel; tape Manufacturer series: HC Kind of gate: XOR Technology: CMOS Family: HC Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MM74HC132MX | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of input: with Schmitt trigger Family: HC Kind of package: reel; tape Delay time: 12ns Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MM74HC132MTCX | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of input: with Schmitt trigger Family: HC Kind of package: reel; tape Delay time: 12ns Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMBD1503A | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A Case: SOT23 Capacitance: 4pF Max. off-state voltage: 200V Max. forward voltage: 1.15V Load current: 0.2A Semiconductor structure: double series Max. forward impulse current: 2A Power dissipation: 0.35W Kind of package: reel; tape Type of diode: switching Mounting: SMD |
auf Bestellung 3366 Stücke: Lieferzeit 14-21 Tag (e) |
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BC638TA | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz Current gain: 100...250 |
auf Bestellung 1959 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT2484LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 0.1A; 0.225/0.3W; SOT23,TO236AB Case: SOT23; TO236AB Collector-emitter voltage: 60V Current gain: 250...800 Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.225/0.3W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD |
auf Bestellung 2475 Stücke: Lieferzeit 14-21 Tag (e) |
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LM317LZG | ONSEMI |
![]() Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT Output voltage: 1.2...37V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 3...40V Kind of package: bulk Manufacturer series: LM317L Kind of voltage regulator: adjustable; linear Mounting: THT Operating temperature: 0...125°C Case: TO92 Output current: 0.1A |
auf Bestellung 372 Stücke: Lieferzeit 14-21 Tag (e) |
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LM317LZRAG | ONSEMI |
![]() Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 0.1A Case: TO92 Mounting: THT Operating temperature: 0...125°C Number of channels: 1 Input voltage: 3...40V Kind of package: reel; tape Manufacturer series: LM317L |
Produkt ist nicht verfügbar |
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MUR1640CTG | ONSEMI |
![]() Description: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 100A; TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A x2 Semiconductor structure: common cathode; double Kind of package: tube Case: TO220AB Max. load current: 16A Max. forward impulse current: 100A Heatsink thickness: 1.15...1.39mm |
Produkt ist nicht verfügbar |
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FSB560A | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 2A; 0.5W; SOT23,TO236AB Mounting: SMD Case: SOT23; TO236AB Kind of package: reel; tape Current gain: 250...550 Collector current: 2A Type of transistor: NPN Power dissipation: 0.5W Polarisation: bipolar Frequency: 75MHz Collector-emitter voltage: 60V |
Produkt ist nicht verfügbar |
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NCP551SN33T1G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.15V Output voltage: 3.3V Output current: 0.15A Case: TSOP5 Mounting: SMD Manufacturer series: NCP551 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 4.3...12V |
Produkt ist nicht verfügbar |
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QSD2030 | ONSEMI |
![]() Description: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex Wavelength: 400...1100nm Mounting: THT LED diameter: 5mm LED lens: transparent Viewing angle: 40° Type of photoelement: photodiode Wavelength of peak sensitivity: 880nm Front: convex Operating voltage: 1.3V |
auf Bestellung 64 Stücke: Lieferzeit 14-21 Tag (e) |
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LM258DR2G | ONSEMI |
![]() ![]() Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC Type of integrated circuit: operational amplifier Bandwidth: 1MHz Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 0.6V/μs Operating temperature: -25...85°C Input offset voltage: 2mV Kind of package: reel; tape Voltage supply range: ± 1.5...16V DC; 3...32V DC |
Produkt ist nicht verfügbar |
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FQA140N10 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 99A Pulsed drain current: 560A Power dissipation: 375W Case: TO3PN Gate-source voltage: ±25V On-state resistance: 10mΩ Mounting: THT Gate charge: 285nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP1075STAT3G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback Mounting: SMD Kind of integrated circuit: AC/DC switcher; PWM controller Topology: flyback Operating temperature: -40...125°C Case: SOT223 Operating voltage: 6.3...10V DC Frequency: 59...71kHz On-state resistance: 16Ω Output current: 0.45A Type of integrated circuit: PMIC Number of channels: 1 |
Produkt ist nicht verfügbar |
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NCP1075STBT3G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback Mounting: SMD Kind of integrated circuit: AC/DC switcher; PWM controller Topology: flyback Operating temperature: -40...125°C Case: SOT223 Operating voltage: 6.3...10V DC Frequency: 90...110kHz On-state resistance: 16Ω Output current: 0.45A Type of integrated circuit: PMIC Number of channels: 1 |
Produkt ist nicht verfügbar |
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6N139M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: Darlington; CTR@If: 500-1600%@1.6mA Mounting: THT Case: DIP8 Turn-on time: 0.2µs Turn-off time: 1.3µs Number of channels: 1 Kind of output: Darlington CTR@If: 500-1600%@1.6mA Manufacturer series: 6N139M Type of optocoupler: optocoupler |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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FQP27P06 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -27A; TO220AB Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -27A Case: TO220AB Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 837 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5335BRLG | ONSEMI |
![]() ![]() Description: Diode: Zener; 5W; 3.9V; reel,tape; CASE017AA; single diode; 50uA Type of diode: Zener Power dissipation: 5W Zener voltage: 3.9V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 50µA Manufacturer series: 1N53xxB |
auf Bestellung 2970 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5337BRLG | ONSEMI |
![]() ![]() Description: Diode: Zener; 5W; 4.7V; reel,tape; CASE017AA; single diode; 5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 4.7V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N53xxB |
auf Bestellung 4297 Stücke: Lieferzeit 14-21 Tag (e) |
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NSI45015WT1G |
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Hersteller: ONSEMI
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 45VDC; 460mW
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 45V DC
Power dissipation: 0.46W
Operating current: 15mA
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 45VDC; 460mW
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 45V DC
Power dissipation: 0.46W
Operating current: 15mA
auf Bestellung 1019 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
97+ | 0.74 EUR |
161+ | 0.45 EUR |
196+ | 0.37 EUR |
332+ | 0.22 EUR |
350+ | 0.2 EUR |
MURS120T3G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
auf Bestellung 2703 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
325+ | 0.22 EUR |
428+ | 0.17 EUR |
481+ | 0.15 EUR |
820+ | 0.087 EUR |
878+ | 0.082 EUR |
MC74AC245DWG |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 80µA
Manufacturer series: AC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 80µA
Manufacturer series: AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MJ15024G | ![]() |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.62 EUR |
10+ | 7.22 EUR |
11+ | 6.82 EUR |
MMBT4401LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FQAF16N50 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.15A
Power dissipation: 110W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.15A
Power dissipation: 110W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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MBR0530T1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
auf Bestellung 7509 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
486+ | 0.15 EUR |
622+ | 0.12 EUR |
697+ | 0.1 EUR |
1767+ | 0.04 EUR |
1866+ | 0.038 EUR |
MBR0530T3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
auf Bestellung 1640 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
676+ | 0.11 EUR |
841+ | 0.085 EUR |
1208+ | 0.059 EUR |
1279+ | 0.056 EUR |
MC33035DWG |
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Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SO24; Ch: 3; Usup: 0÷40VDC
Operating temperature: -40...85°C
Type of integrated circuit: driver
Number of channels: 3
Kind of package: tube
Kind of integrated circuit: brushless motor controller
Mounting: SMD
Case: SO24
Supply voltage: 0...40V DC
Operating voltage: 10...30V DC
Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SO24; Ch: 3; Usup: 0÷40VDC
Operating temperature: -40...85°C
Type of integrated circuit: driver
Number of channels: 3
Kind of package: tube
Kind of integrated circuit: brushless motor controller
Mounting: SMD
Case: SO24
Supply voltage: 0...40V DC
Operating voltage: 10...30V DC
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.82 EUR |
13+ | 5.51 EUR |
MOC3042M |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC304XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Manufacturer series: MOC304XM
Slew rate: 1kV/μs
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC304XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Manufacturer series: MOC304XM
Slew rate: 1kV/μs
auf Bestellung 482 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
91+ | 0.79 EUR |
111+ | 0.65 EUR |
126+ | 0.57 EUR |
155+ | 0.46 EUR |
164+ | 0.44 EUR |
NUD4001DR2G | ![]() |
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Hersteller: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; SO8; 500mA; 28V; Ch: 1; PWM
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Output current: 0.5A
Case: SO8
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Integrated circuit features: PWM
Output voltage: 28V
Category: LED drivers
Description: IC: driver; LED driver; SO8; 500mA; 28V; Ch: 1; PWM
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Output current: 0.5A
Case: SO8
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Integrated circuit features: PWM
Output voltage: 28V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
36+ | 1.99 EUR |
59+ | 1.23 EUR |
104+ | 0.69 EUR |
110+ | 0.65 EUR |
500+ | 0.63 EUR |
NTJD4001NT1G |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Mounting: SMD
Case: SC70-6; SC88; SOT363
Power dissipation: 0.272W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 0.18A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Mounting: SMD
Case: SC70-6; SC88; SOT363
Power dissipation: 0.272W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 0.18A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET x2
auf Bestellung 2040 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
228+ | 0.31 EUR |
304+ | 0.24 EUR |
343+ | 0.21 EUR |
496+ | 0.14 EUR |
NVTJD4001NT1G |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Mounting: SMD
Case: SC70-6; SC88; SOT363
Power dissipation: 0.272W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 0.18A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Mounting: SMD
Case: SC70-6; SC88; SOT363
Power dissipation: 0.272W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 0.18A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET x2
auf Bestellung 2910 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
206+ | 0.35 EUR |
236+ | 0.3 EUR |
374+ | 0.19 EUR |
414+ | 0.17 EUR |
486+ | 0.15 EUR |
516+ | 0.14 EUR |
6N138M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP8; 6N138M
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 300-1600%@1.6mA
Case: DIP8
Manufacturer series: 6N138M
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP8; 6N138M
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 300-1600%@1.6mA
Case: DIP8
Manufacturer series: 6N138M
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBFJ201 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 200uA; 0.35W; SOT23; Igt: 50mA
Gate current: 50mA
Drain current: 200µA
Type of transistor: N-JFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate-source voltage: -40V
Mounting: SMD
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 200uA; 0.35W; SOT23; Igt: 50mA
Gate current: 50mA
Drain current: 200µA
Type of transistor: N-JFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate-source voltage: -40V
Mounting: SMD
Case: SOT23
auf Bestellung 2852 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
154+ | 0.47 EUR |
202+ | 0.35 EUR |
261+ | 0.27 EUR |
368+ | 0.19 EUR |
459+ | 0.16 EUR |
486+ | 0.15 EUR |
506+ | 0.14 EUR |
CAT24C04HU4I-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FQD2N90TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: SMD
Case: DPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: SMD
Case: DPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FQU2N90TU-AM002 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: tube
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: THT
Case: IPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: tube
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: THT
Case: IPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FQU2N90TU-WS |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: tube
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: THT
Case: IPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: tube
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: THT
Case: IPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP431ACLPRAG |
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Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; TO92; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; TO92; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP431ACSNT1G |
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Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCPF11N60 | ![]() |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.19 EUR |
33+ | 2.23 EUR |
35+ | 2.1 EUR |
FCPF11N60F |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Pulsed drain current: 33A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Pulsed drain current: 33A
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.42 EUR |
25+ | 2.95 EUR |
26+ | 2.79 EUR |
FCPF11N60T |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Pulsed drain current: 33A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Pulsed drain current: 33A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCP22N60N |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperMOS®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±45V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperMOS®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±45V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDD6637 |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Case: DPAK
Drain-source voltage: -35V
Drain current: -55A
On-state resistance: 19mΩ
Type of transistor: P-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 35nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±25V
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Case: DPAK
Drain-source voltage: -35V
Drain current: -55A
On-state resistance: 19mΩ
Type of transistor: P-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 35nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±25V
Mounting: SMD
auf Bestellung 2604 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.3 EUR |
44+ | 1.64 EUR |
61+ | 1.19 EUR |
65+ | 1.12 EUR |
250+ | 1.09 EUR |
MMBTH81 |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; RF; 20V; 50mA; 225mW; SOT23
Frequency: 600MHz
Collector-emitter voltage: 20V
Collector current: 50mA
Type of transistor: PNP
Power dissipation: 0.225W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
Mounting: SMD
Case: SOT23
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; RF; 20V; 50mA; 225mW; SOT23
Frequency: 600MHz
Collector-emitter voltage: 20V
Collector current: 50mA
Type of transistor: PNP
Power dissipation: 0.225W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
Mounting: SMD
Case: SOT23
auf Bestellung 1513 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
571+ | 0.13 EUR |
665+ | 0.11 EUR |
1214+ | 0.059 EUR |
1283+ | 0.056 EUR |
MM74HC86M |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 2
Supply voltage: 2...6V DC
Number of channels: quad; 4
Quiescent current: 20µA
Kind of package: tube
Kind of gate: XOR
Technology: CMOS
Family: HC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 2
Supply voltage: 2...6V DC
Number of channels: quad; 4
Quiescent current: 20µA
Kind of package: tube
Kind of gate: XOR
Technology: CMOS
Family: HC
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MJH11020G |
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Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Case: TO247-3
Collector-emitter voltage: 200V
Collector current: 15A
Type of transistor: NPN
Power dissipation: 150W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Mounting: THT
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Case: TO247-3
Collector-emitter voltage: 200V
Collector current: 15A
Type of transistor: NPN
Power dissipation: 150W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Mounting: THT
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.25 EUR |
15+ | 4.92 EUR |
16+ | 4.65 EUR |
MJH11021G |
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Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Case: TO247-3
Collector-emitter voltage: 250V
Collector current: 15A
Type of transistor: PNP
Power dissipation: 150W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Mounting: THT
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Case: TO247-3
Collector-emitter voltage: 250V
Collector current: 15A
Type of transistor: PNP
Power dissipation: 150W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Mounting: THT
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.62 EUR |
15+ | 4.83 EUR |
16+ | 4.56 EUR |
30+ | 4.39 EUR |
MJH11022G |
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Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Case: TO247-3
Collector-emitter voltage: 250V
Collector current: 15A
Type of transistor: NPN
Power dissipation: 150W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Mounting: THT
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Case: TO247-3
Collector-emitter voltage: 250V
Collector current: 15A
Type of transistor: NPN
Power dissipation: 150W
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MJD127T4G |
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Hersteller: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
auf Bestellung 2075 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
55+ | 1.32 EUR |
82+ | 0.88 EUR |
152+ | 0.47 EUR |
161+ | 0.45 EUR |
1000+ | 0.43 EUR |
BZX85C10 |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
84+ | 0.86 EUR |
BZX85C15 |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 15V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 15V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 15V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 15V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
auf Bestellung 6224 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
447+ | 0.16 EUR |
582+ | 0.12 EUR |
738+ | 0.097 EUR |
1270+ | 0.056 EUR |
1484+ | 0.048 EUR |
1544+ | 0.046 EUR |
1573+ | 0.045 EUR |
BZX85C16 |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 16V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 16V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: BZX85C
Kind of package: bulk
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 16V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 16V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: BZX85C
Kind of package: bulk
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
146+ | 0.49 EUR |
MMBTA06LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 10298 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
640+ | 0.11 EUR |
1064+ | 0.067 EUR |
1454+ | 0.049 EUR |
1678+ | 0.043 EUR |
2348+ | 0.03 EUR |
3677+ | 0.019 EUR |
3907+ | 0.018 EUR |
MM74HC32MX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 10ns
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Technology: CMOS
Operating temperature: -40...85°C
Delay time: 10ns
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 10ns
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Technology: CMOS
Operating temperature: -40...85°C
Delay time: 10ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM74HC32MTCX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Technology: CMOS
Operating temperature: -40...85°C
Delay time: 10ns
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Technology: CMOS
Operating temperature: -40...85°C
Delay time: 10ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM74HCT74MTCX |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS,TTL; HCT; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Manufacturer series: HCT
Technology: CMOS; TTL
Number of inputs: 4
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS,TTL; HCT; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Manufacturer series: HCT
Technology: CMOS; TTL
Number of inputs: 4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM74HC86MX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 9ns
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 2
Supply voltage: 2...6V DC
Number of channels: quad; 4
Delay time: 9ns
Kind of package: reel; tape
Kind of gate: XOR
Technology: CMOS
Family: HC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 9ns
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 2
Supply voltage: 2...6V DC
Number of channels: quad; 4
Delay time: 9ns
Kind of package: reel; tape
Kind of gate: XOR
Technology: CMOS
Family: HC
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM74HC86MTCX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Case: TSSOP14
Number of inputs: 2
Supply voltage: 2...6V DC
Number of channels: 4
Kind of package: reel; tape
Manufacturer series: HC
Kind of gate: XOR
Technology: CMOS
Family: HC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Case: TSSOP14
Number of inputs: 2
Supply voltage: 2...6V DC
Number of channels: 4
Kind of package: reel; tape
Manufacturer series: HC
Kind of gate: XOR
Technology: CMOS
Family: HC
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM74HC132MX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of input: with Schmitt trigger
Family: HC
Kind of package: reel; tape
Delay time: 12ns
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of input: with Schmitt trigger
Family: HC
Kind of package: reel; tape
Delay time: 12ns
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
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MM74HC132MTCX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of input: with Schmitt trigger
Family: HC
Kind of package: reel; tape
Delay time: 12ns
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of input: with Schmitt trigger
Family: HC
Kind of package: reel; tape
Delay time: 12ns
Technology: CMOS
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MMBD1503A |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Case: SOT23
Capacitance: 4pF
Max. off-state voltage: 200V
Max. forward voltage: 1.15V
Load current: 0.2A
Semiconductor structure: double series
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Case: SOT23
Capacitance: 4pF
Max. off-state voltage: 200V
Max. forward voltage: 1.15V
Load current: 0.2A
Semiconductor structure: double series
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
auf Bestellung 3366 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
264+ | 0.27 EUR |
435+ | 0.16 EUR |
549+ | 0.13 EUR |
610+ | 0.12 EUR |
887+ | 0.081 EUR |
939+ | 0.076 EUR |
1500+ | 0.073 EUR |
BC638TA |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 100...250
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 100...250
auf Bestellung 1959 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
296+ | 0.24 EUR |
464+ | 0.15 EUR |
820+ | 0.087 EUR |
867+ | 0.083 EUR |
MMBT2484LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Case: SOT23; TO236AB
Collector-emitter voltage: 60V
Current gain: 250...800
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.225/0.3W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Case: SOT23; TO236AB
Collector-emitter voltage: 60V
Current gain: 250...800
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.225/0.3W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
auf Bestellung 2475 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
511+ | 0.14 EUR |
745+ | 0.096 EUR |
876+ | 0.082 EUR |
1894+ | 0.038 EUR |
2000+ | 0.036 EUR |
LM317LZG |
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Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Output voltage: 1.2...37V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3...40V
Kind of package: bulk
Manufacturer series: LM317L
Kind of voltage regulator: adjustable; linear
Mounting: THT
Operating temperature: 0...125°C
Case: TO92
Output current: 0.1A
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Output voltage: 1.2...37V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3...40V
Kind of package: bulk
Manufacturer series: LM317L
Kind of voltage regulator: adjustable; linear
Mounting: THT
Operating temperature: 0...125°C
Case: TO92
Output current: 0.1A
auf Bestellung 372 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
97+ | 0.74 EUR |
216+ | 0.33 EUR |
258+ | 0.28 EUR |
304+ | 0.24 EUR |
321+ | 0.22 EUR |
LM317LZRAG |
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Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.1A
Case: TO92
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Kind of package: reel; tape
Manufacturer series: LM317L
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.1A
Case: TO92
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Kind of package: reel; tape
Manufacturer series: LM317L
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MUR1640CTG |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: TO220AB
Max. load current: 16A
Max. forward impulse current: 100A
Heatsink thickness: 1.15...1.39mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: TO220AB
Max. load current: 16A
Max. forward impulse current: 100A
Heatsink thickness: 1.15...1.39mm
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FSB560A |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 0.5W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Kind of package: reel; tape
Current gain: 250...550
Collector current: 2A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Frequency: 75MHz
Collector-emitter voltage: 60V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 0.5W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Kind of package: reel; tape
Current gain: 250...550
Collector current: 2A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Frequency: 75MHz
Collector-emitter voltage: 60V
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NCP551SN33T1G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 3.3V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 3.3V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...12V
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QSD2030 |
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Hersteller: ONSEMI
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex
Wavelength: 400...1100nm
Mounting: THT
LED diameter: 5mm
LED lens: transparent
Viewing angle: 40°
Type of photoelement: photodiode
Wavelength of peak sensitivity: 880nm
Front: convex
Operating voltage: 1.3V
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex
Wavelength: 400...1100nm
Mounting: THT
LED diameter: 5mm
LED lens: transparent
Viewing angle: 40°
Type of photoelement: photodiode
Wavelength of peak sensitivity: 880nm
Front: convex
Operating voltage: 1.3V
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
64+ | 1.12 EUR |
LM258DR2G | ![]() |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.6V/μs
Operating temperature: -25...85°C
Input offset voltage: 2mV
Kind of package: reel; tape
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.6V/μs
Operating temperature: -25...85°C
Input offset voltage: 2mV
Kind of package: reel; tape
Voltage supply range: ± 1.5...16V DC; 3...32V DC
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FQA140N10 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 99A
Pulsed drain current: 560A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 99A
Pulsed drain current: 560A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.67 EUR |
11+ | 6.54 EUR |
12+ | 6.19 EUR |
NCP1075STAT3G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Mounting: SMD
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Operating temperature: -40...125°C
Case: SOT223
Operating voltage: 6.3...10V DC
Frequency: 59...71kHz
On-state resistance: 16Ω
Output current: 0.45A
Type of integrated circuit: PMIC
Number of channels: 1
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Mounting: SMD
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Operating temperature: -40...125°C
Case: SOT223
Operating voltage: 6.3...10V DC
Frequency: 59...71kHz
On-state resistance: 16Ω
Output current: 0.45A
Type of integrated circuit: PMIC
Number of channels: 1
Produkt ist nicht verfügbar
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NCP1075STBT3G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Mounting: SMD
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Operating temperature: -40...125°C
Case: SOT223
Operating voltage: 6.3...10V DC
Frequency: 90...110kHz
On-state resistance: 16Ω
Output current: 0.45A
Type of integrated circuit: PMIC
Number of channels: 1
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Mounting: SMD
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Operating temperature: -40...125°C
Case: SOT223
Operating voltage: 6.3...10V DC
Frequency: 90...110kHz
On-state resistance: 16Ω
Output current: 0.45A
Type of integrated circuit: PMIC
Number of channels: 1
Produkt ist nicht verfügbar
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6N139M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; CTR@If: 500-1600%@1.6mA
Mounting: THT
Case: DIP8
Turn-on time: 0.2µs
Turn-off time: 1.3µs
Number of channels: 1
Kind of output: Darlington
CTR@If: 500-1600%@1.6mA
Manufacturer series: 6N139M
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; CTR@If: 500-1600%@1.6mA
Mounting: THT
Case: DIP8
Turn-on time: 0.2µs
Turn-off time: 1.3µs
Number of channels: 1
Kind of output: Darlington
CTR@If: 500-1600%@1.6mA
Manufacturer series: 6N139M
Type of optocoupler: optocoupler
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.79 EUR |
79+ | 0.91 EUR |
97+ | 0.74 EUR |
102+ | 0.7 EUR |
FQP27P06 |
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Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27A; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -27A
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27A; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -27A
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 837 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.53 EUR |
26+ | 2.77 EUR |
46+ | 1.59 EUR |
48+ | 1.5 EUR |
250+ | 1.44 EUR |
1N5335BRLG | ![]() |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 3.9V; reel,tape; CASE017AA; single diode; 50uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 3.9V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 3.9V; reel,tape; CASE017AA; single diode; 50uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 3.9V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50µA
Manufacturer series: 1N53xxB
auf Bestellung 2970 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
242+ | 0.3 EUR |
311+ | 0.23 EUR |
329+ | 0.22 EUR |
500+ | 0.21 EUR |
1N5337BRLG | ![]() |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; reel,tape; CASE017AA; single diode; 5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; reel,tape; CASE017AA; single diode; 5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N53xxB
auf Bestellung 4297 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
105+ | 0.69 EUR |
157+ | 0.46 EUR |
275+ | 0.26 EUR |
291+ | 0.25 EUR |
500+ | 0.24 EUR |