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74VHC112MTC 74VHC112MTC ONSEMI ONSM-S-A0003546545-1.pdf?t.download=true&u=5oefqw Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; VHC; SMD; TSSOP16; 20uA; tube
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: TSSOP16
Supply voltage: 2...5.5V DC
Kind of integrated circuit: JK flip-flop
Trigger: negative-edge-triggered
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 20µA
Technology: CMOS
Manufacturer series: VHC
Produkt ist nicht verfügbar
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74VHC112MX 74VHC112MX ONSEMI 74VHC112-D.pdf Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; IN: 5; CMOS; VHC; SMD; SOIC16; VHC
Type of integrated circuit: digital
Number of channels: 2
Number of inputs: 5
Mounting: SMD
Case: SOIC16
Supply voltage: 2...5.5V DC
Family: VHC
Kind of integrated circuit: JK flip-flop
Kind of package: reel; tape
Operating temperature: -40...85°C
Technology: CMOS
Manufacturer series: VHC
Produkt ist nicht verfügbar
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SS23 SS23 ONSEMI S210.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.5V
Load current: 2A
Kind of package: reel; tape
Max. forward impulse current: 50A
Max. off-state voltage: 30V
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
auf Bestellung 1422 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
368+0.19 EUR
Mindestbestellmenge: 358
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SS23FA ONSEMI ss29fa-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.5V
Load current: 2A
Kind of package: reel; tape
Max. forward impulse current: 50A
Max. off-state voltage: 30V
Case: SOD123F
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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NL17SG32DFT2G NL17SG32DFT2G ONSEMI NL17SG32-D.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC88A; MiniGate; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 0.9...3.6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: NL
Manufacturer series: MiniGate
auf Bestellung 2988 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
358+0.2 EUR
444+0.16 EUR
517+0.14 EUR
607+0.12 EUR
745+0.096 EUR
1000+0.072 EUR
Mindestbestellmenge: 209
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NC7S32M5X NC7S32M5X ONSEMI NC7S32.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC70-5; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
auf Bestellung 1660 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
926+0.077 EUR
1042+0.069 EUR
1263+0.057 EUR
1624+0.044 EUR
1660+0.043 EUR
Mindestbestellmenge: 715
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NC7SZ86M5X NC7SZ86M5X ONSEMI NC7SZ86M5X.pdf Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; SMD; SC74A; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC74A
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
auf Bestellung 1854 Stücke:
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455+0.16 EUR
544+0.13 EUR
610+0.12 EUR
650+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 455
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NC7S86M5X NC7S86M5X ONSEMI NC7S86.pdf Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT23-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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NCP4306AAAZZZAMN1TBG ONSEMI ncp4306-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
Produkt ist nicht verfügbar
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NCP4306AADZZZAMN1TBG ONSEMI ncp4306-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
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NCP4306AADZZZAMNTWG ONSEMI ncp4306-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
Produkt ist nicht verfügbar
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df06m df06m ONSEMI DF005-10m.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
Produkt ist nicht verfügbar
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NLV14013BDTR2G NLV14013BDTR2G ONSEMI mc14013b-d.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; SMD; TSSOP14; reel,tape
Operating temperature: -55...125°C
Kind of integrated circuit: D flip-flop
Type of integrated circuit: digital
Case: TSSOP14
Trigger: positive-edge-triggered
Kind of package: reel; tape
Mounting: SMD
Number of channels: 2
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
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2SC3647T-TD-E 2SC3647T-TD-E ONSEMI 2sa1417-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1.5W; SOT89
Polarisation: bipolar
Mounting: SMD
Case: SOT89
Type of transistor: NPN
Kind of package: reel; tape
Power dissipation: 1.5W
Collector current: 2A
Collector-emitter voltage: 100V
Current gain: 200...400
Frequency: 120MHz
Produkt ist nicht verfügbar
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FCPF220N80 ONSEMI FCPF220N80-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 23A; Idm: 57A; 44W; TO220FP
Case: TO220FP
Drain current: 23A
Gate-source voltage: ±20V
Power dissipation: 44W
Pulsed drain current: 57A
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 78nC
On-state resistance: 0.22Ω
Produkt ist nicht verfügbar
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MMBTA92 MMBTA92 ONSEMI MMBTA92-DTE.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NC7ST08P5X-L22057 NC7ST08P5X-L22057 ONSEMI NC7ST08-DTE.PDF Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC88A; 4.5÷5.5VDC; -48÷85°C
Type of integrated circuit: digital
Mounting: SMD
Kind of package: reel; tape
Case: SC88A
Operating temperature: -48...85°C
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
Number of channels: single; 1
Kind of gate: AND
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
320+0.23 EUR
510+0.14 EUR
600+0.12 EUR
690+0.1 EUR
3000+0.097 EUR
Mindestbestellmenge: 320
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BCP55 BCP55 ONSEMI BCP55-D.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMCJ43A SMCJ43A ONSEMI SMCJ14CA.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 50.3V; 200A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 50.3V
Max. forward impulse current: 200A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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UJ3N120070K3S ONSEMI UJ3N120070K3S-D.PDF Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 1.2kV; 254W
Mounting: THT
Kind of package: tube
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Gate-source voltage: -20...20V
Drain current: 24.5A
Gate charge: 116nC
On-state resistance: 154mΩ
Power dissipation: 254W
Pulsed drain current: 85A
Case: TO247-3
Kind of transistor: cascode
Kind of channel: enhancement
Type of transistor: N-JFET / N-MOSFET
Produkt ist nicht verfügbar
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NCP154MX180290TAG ONSEMI NCP154-D.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; XDFN8; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Case: XDFN8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
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NCP154MX280280TAG ONSEMI ncp154-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; XDFN8; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Case: XDFN8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
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NCV8154MN300300TBG ONSEMI NCV8154-D.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Case: DFN10
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
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NCV8154MW120280TBG ONSEMI ncv8154-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Case: DFN10
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
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NCV8154MW300300TBG ONSEMI ncv8154-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Case: DFN10
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
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NCV8154MW330180TBG ONSEMI ncv8154-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Case: DFN10
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
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NCV8154MW330280TBG ONSEMI ncv8154-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Case: DFN10
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
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NCV8154MW330330TBG ONSEMI ncv8154-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Case: DFN10
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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FAN7527BMX ONSEMI fan7527b-d.pdf Category: Drivers - integrated circuits
Description: IC: PMIC; SOIC8
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -25...125°C
Case: SOIC8
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.27 EUR
Mindestbestellmenge: 2500
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ES1B ES1B ONSEMI ES1x.PDF Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Reverse recovery time: 15ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMA
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 7pF
Power dissipation: 1.47W
auf Bestellung 1365 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
214+0.33 EUR
257+0.28 EUR
486+0.15 EUR
538+0.13 EUR
Mindestbestellmenge: 173
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ES1C ES1C ONSEMI ES1x.PDF Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Capacitance: 7pF
Power dissipation: 1.47W
Max. forward impulse current: 30A
Max. off-state voltage: 150V
Kind of package: reel; tape
Case: SMA
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 15ns
Leakage current: 0.1mA
Max. forward voltage: 0.92V
Load current: 1A
Produkt ist nicht verfügbar
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MJE253G MJE253G ONSEMI MJE253G.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 4A; 15W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 15W
Case: TO225
Current gain: 40...180
Mounting: THT
Kind of package: bulk
Frequency: 40MHz
auf Bestellung 615 Stücke:
Lieferzeit 14-21 Tag (e)
64+1.13 EUR
98+0.73 EUR
124+0.58 EUR
137+0.52 EUR
250+0.46 EUR
500+0.45 EUR
Mindestbestellmenge: 64
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MJE243G MJE243G ONSEMI MJE253G.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 15W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 15W
Case: TO225
Current gain: 40...180
Mounting: THT
Kind of package: bulk
Frequency: 40MHz
auf Bestellung 1068 Stücke:
Lieferzeit 14-21 Tag (e)
68+1.06 EUR
107+0.67 EUR
135+0.53 EUR
151+0.47 EUR
200+0.43 EUR
Mindestbestellmenge: 68
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FDMS86350ET80 ONSEMI fdms86350et80-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 140A; 187W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 140A
Power dissipation: 187W
Case: PQFN8
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
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FDMS86150 ONSEMI fdms86150-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 187W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 187W
Case: PQFN8
On-state resistance: 9.1mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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FDMC86324 FDMC86324 ONSEMI FDMC86324.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 20A
Power dissipation: 41W
Case: PQFN8
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
Produkt ist nicht verfügbar
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FDMS0306AS ONSEMI fdms0306as-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 59W
Case: PQFN8
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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NTTFS1D2N02P1E ONSEMI nttfs1d2n02p1e-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 180A; Idm: 195A; 52W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 180A
Pulsed drain current: 195A
Power dissipation: 52W
Case: PQFN8
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS4D5N08LC ONSEMI fdms4d5n08lc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 80V; 116A; 113.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 80V
Drain current: 116A
Power dissipation: 113.6W
Case: PQFN8
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 71nC
Kind of channel: enhancement
Gate-source voltage: 20V
Technology: PowerTrench®
Produkt ist nicht verfügbar
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FDMT1D3N08B ONSEMI fdmt1d3n08b-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 103A; Idm: 864A; 178W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 103A
Pulsed drain current: 864A
Power dissipation: 178W
Case: PQFN8
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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NTMFSC012N15MC ONSEMI ntmfsc012n15mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 80A; Idm: 1067A; 58W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 80A
Pulsed drain current: 1067A
Power dissipation: 58W
Case: PQFN8
On-state resistance: 11.4mΩ
Mounting: SMD
Gate charge: 32.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
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FDMC3020DC ONSEMI fdmc3020dc-d.pdf FAIR-S-A0002365617-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 100A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 50W
Case: PQFN8
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
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FDMC4D9P20X8 ONSEMI fdmc4d9p20x8-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -47A; Idm: -335A; 40W; PQFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -47A
Pulsed drain current: -335A
Power dissipation: 40W
Case: PQFN8
On-state resistance: 16.4mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
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FDMC7570S ONSEMI fdmc7570s-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; Idm: 120A; 59W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Pulsed drain current: 120A
Power dissipation: 59W
Case: PQFN8
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
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NCS20074DR2G NCS20074DR2G ONSEMI ncs20071-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Integrated circuit features: rail-to-rail output
Case: SO14
Operating temperature: -40...125°C
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
auf Bestellung 2475 Stücke:
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140+0.51 EUR
158+0.45 EUR
172+0.42 EUR
186+0.38 EUR
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NCV20074DTBR2G ONSEMI ncs20071-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Integrated circuit features: rail-to-rail output
Case: TSSOP14
Operating temperature: -40...125°C
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
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NCS20074DTBR2G ONSEMI ncs20071-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Integrated circuit features: rail-to-rail output
Case: TSSOP14
Operating temperature: -40...125°C
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
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NCV20074DR2G ONSEMI ncs20071-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Integrated circuit features: rail-to-rail output
Case: SO14
Operating temperature: -40...125°C
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
Produkt ist nicht verfügbar
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MBRS410LT3G MBRS410LT3G ONSEMI MBRS410LT3G-DTE.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 10V; 4A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 10V
Load current: 4A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 0.225V
Kind of package: reel; tape
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FDLL300A FDLL300A ONSEMI FDLL300A.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 125V; 0.5A; SOD80; Ufmax: 1V; Ifsm: 4A; 500mW
Type of diode: switching
Case: SOD80
Mounting: SMD
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 6pF
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Power dissipation: 0.5W
Max. load current: 0.6A
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772+0.093 EUR
839+0.085 EUR
1055+0.068 EUR
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FNB41560
+1
 		FNB41560 ONSEMI fnb41560b2-d.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Mounting: THT
Frequency: 20kHz
Number of channels: 6
Power dissipation: 34W
Operating voltage: 13.5...16.5/0...400V DC
Kind of integrated circuit: 3-phase motor controller; IPM
Collector-emitter voltage: 600V
Technology: Motion SPM® 45
Case: SPMAA-A26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Operating temperature: -40...125°C
Output current: 15A
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FDD4243 FDD4243 ONSEMI FDD4243.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -14A; 42W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -14A
Gate charge: 29nC
On-state resistance: 69mΩ
Gate-source voltage: ±20V
Power dissipation: 42W
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86+0.83 EUR
100+0.72 EUR
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NCS20071SN2T1G NCS20071SN2T1G ONSEMI NCS20071_2_4.PDF Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; ±1.35÷18VDC,2.7÷36VDC
Operating temperature: -40...125°C
Type of integrated circuit: operational amplifier
Integrated circuit features: rail-to-rail output
Number of channels: single; 1
Mounting: SMT
Case: TSOP5
Input offset voltage: 4.5mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.8V/μs
Bandwidth: 3MHz
Kind of package: reel; tape
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NTTFS002N04CLTAG ONSEMI nttfs002n04cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 142A
Pulsed drain current: 706A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTTFS002N04CTAG ONSEMI Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS002N04CLTAG ONSEMI nvtfs002n04cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 142A
Pulsed drain current: 706A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS002N04CTAG ONSEMI Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFWS002N04CLTAG ONSEMI nvtfs002n04cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 142A
Pulsed drain current: 706A
Power dissipation: 27W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFWS002N04CTAG ONSEMI nvtfs002n04c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
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MOC3063M MOC3063M ONSEMI MOC3063M-ONS.pdf Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: DIP6
Trigger current: 5mA
Mounting: THT
Manufacturer series: MOC3063M
Output voltage: 600V
Produkt ist nicht verfügbar
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74VHC112MTC ONSM-S-A0003546545-1.pdf?t.download=true&u=5oefqw
74VHC112MTC
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; VHC; SMD; TSSOP16; 20uA; tube
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: TSSOP16
Supply voltage: 2...5.5V DC
Kind of integrated circuit: JK flip-flop
Trigger: negative-edge-triggered
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 20µA
Technology: CMOS
Manufacturer series: VHC
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74VHC112MX 74VHC112-D.pdf
74VHC112MX
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; IN: 5; CMOS; VHC; SMD; SOIC16; VHC
Type of integrated circuit: digital
Number of channels: 2
Number of inputs: 5
Mounting: SMD
Case: SOIC16
Supply voltage: 2...5.5V DC
Family: VHC
Kind of integrated circuit: JK flip-flop
Kind of package: reel; tape
Operating temperature: -40...85°C
Technology: CMOS
Manufacturer series: VHC
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SS23 S210.pdf
SS23
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.5V
Load current: 2A
Kind of package: reel; tape
Max. forward impulse current: 50A
Max. off-state voltage: 30V
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
auf Bestellung 1422 Stücke:
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358+0.2 EUR
368+0.19 EUR
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SS23FA ss29fa-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.5V
Load current: 2A
Kind of package: reel; tape
Max. forward impulse current: 50A
Max. off-state voltage: 30V
Case: SOD123F
Type of diode: Schottky rectifying
Semiconductor structure: single diode
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NL17SG32DFT2G NL17SG32-D.pdf
NL17SG32DFT2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC88A; MiniGate; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 0.9...3.6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: NL
Manufacturer series: MiniGate
auf Bestellung 2988 Stücke:
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Anzahl Preis
209+0.34 EUR
358+0.2 EUR
444+0.16 EUR
517+0.14 EUR
607+0.12 EUR
745+0.096 EUR
1000+0.072 EUR
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NC7S32M5X NC7S32.pdf
NC7S32M5X
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC70-5; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
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715+0.1 EUR
926+0.077 EUR
1042+0.069 EUR
1263+0.057 EUR
1624+0.044 EUR
1660+0.043 EUR
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NC7SZ86M5X NC7SZ86M5X.pdf
NC7SZ86M5X
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; SMD; SC74A; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC74A
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
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455+0.16 EUR
544+0.13 EUR
610+0.12 EUR
650+0.11 EUR
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NC7S86M5X NC7S86.pdf
NC7S86M5X
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT23-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
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NCP4306AAAZZZAMN1TBG ncp4306-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
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NCP4306AADZZZAMN1TBG ncp4306-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
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NCP4306AADZZZAMNTWG ncp4306-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
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df06m DF005-10m.pdf
df06m
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
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NLV14013BDTR2G mc14013b-d.pdf
NLV14013BDTR2G
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; SMD; TSSOP14; reel,tape
Operating temperature: -55...125°C
Kind of integrated circuit: D flip-flop
Type of integrated circuit: digital
Case: TSSOP14
Trigger: positive-edge-triggered
Kind of package: reel; tape
Mounting: SMD
Number of channels: 2
Supply voltage: 3...18V DC
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2SC3647T-TD-E 2sa1417-d.pdf
2SC3647T-TD-E
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1.5W; SOT89
Polarisation: bipolar
Mounting: SMD
Case: SOT89
Type of transistor: NPN
Kind of package: reel; tape
Power dissipation: 1.5W
Collector current: 2A
Collector-emitter voltage: 100V
Current gain: 200...400
Frequency: 120MHz
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FCPF220N80 FCPF220N80-D.PDF
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 23A; Idm: 57A; 44W; TO220FP
Case: TO220FP
Drain current: 23A
Gate-source voltage: ±20V
Power dissipation: 44W
Pulsed drain current: 57A
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 78nC
On-state resistance: 0.22Ω
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MMBTA92 MMBTA92-DTE.PDF
MMBTA92
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NC7ST08P5X-L22057 NC7ST08-DTE.PDF
NC7ST08P5X-L22057
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC88A; 4.5÷5.5VDC; -48÷85°C
Type of integrated circuit: digital
Mounting: SMD
Kind of package: reel; tape
Case: SC88A
Operating temperature: -48...85°C
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
Number of channels: single; 1
Kind of gate: AND
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
320+0.23 EUR
510+0.14 EUR
600+0.12 EUR
690+0.1 EUR
3000+0.097 EUR
Mindestbestellmenge: 320
Im Einkaufswagen  Stück im Wert von  UAH
BCP55 BCP55-D.PDF
BCP55
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMCJ43A SMCJ14CA.pdf
SMCJ43A
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 50.3V; 200A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 50.3V
Max. forward impulse current: 200A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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UJ3N120070K3S UJ3N120070K3S-D.PDF
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 1.2kV; 254W
Mounting: THT
Kind of package: tube
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Gate-source voltage: -20...20V
Drain current: 24.5A
Gate charge: 116nC
On-state resistance: 154mΩ
Power dissipation: 254W
Pulsed drain current: 85A
Case: TO247-3
Kind of transistor: cascode
Kind of channel: enhancement
Type of transistor: N-JFET / N-MOSFET
Produkt ist nicht verfügbar
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NCP154MX180290TAG NCP154-D.PDF
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; XDFN8; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Case: XDFN8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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NCP154MX280280TAG ncp154-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; XDFN8; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Case: XDFN8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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NCV8154MN300300TBG NCV8154-D.PDF
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Case: DFN10
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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NCV8154MW120280TBG ncv8154-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Case: DFN10
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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NCV8154MW300300TBG ncv8154-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Case: DFN10
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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NCV8154MW330180TBG ncv8154-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Case: DFN10
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV8154MW330280TBG ncv8154-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Case: DFN10
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV8154MW330330TBG ncv8154-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Case: DFN10
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FAN7527BMX fan7527b-d.pdf
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; SOIC8
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -25...125°C
Case: SOIC8
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.27 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
ES1B ES1x.PDF
ES1B
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Reverse recovery time: 15ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMA
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 7pF
Power dissipation: 1.47W
auf Bestellung 1365 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
214+0.33 EUR
257+0.28 EUR
486+0.15 EUR
538+0.13 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
ES1C ES1x.PDF
ES1C
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Capacitance: 7pF
Power dissipation: 1.47W
Max. forward impulse current: 30A
Max. off-state voltage: 150V
Kind of package: reel; tape
Case: SMA
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 15ns
Leakage current: 0.1mA
Max. forward voltage: 0.92V
Load current: 1A
Produkt ist nicht verfügbar
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MJE253G MJE253G.pdf
MJE253G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 4A; 15W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 15W
Case: TO225
Current gain: 40...180
Mounting: THT
Kind of package: bulk
Frequency: 40MHz
auf Bestellung 615 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
98+0.73 EUR
124+0.58 EUR
137+0.52 EUR
250+0.46 EUR
500+0.45 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
MJE243G MJE253G.pdf
MJE243G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 15W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 15W
Case: TO225
Current gain: 40...180
Mounting: THT
Kind of package: bulk
Frequency: 40MHz
auf Bestellung 1068 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
68+1.06 EUR
107+0.67 EUR
135+0.53 EUR
151+0.47 EUR
200+0.43 EUR
Mindestbestellmenge: 68
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86350ET80 fdms86350et80-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 140A; 187W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 140A
Power dissipation: 187W
Case: PQFN8
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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FDMS86150 fdms86150-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 187W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 187W
Case: PQFN8
On-state resistance: 9.1mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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FDMC86324 FDMC86324.pdf
FDMC86324
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 20A
Power dissipation: 41W
Case: PQFN8
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
Produkt ist nicht verfügbar
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FDMS0306AS fdms0306as-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 59W
Case: PQFN8
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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NTTFS1D2N02P1E nttfs1d2n02p1e-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 180A; Idm: 195A; 52W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 180A
Pulsed drain current: 195A
Power dissipation: 52W
Case: PQFN8
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS4D5N08LC fdms4d5n08lc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 80V; 116A; 113.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 80V
Drain current: 116A
Power dissipation: 113.6W
Case: PQFN8
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 71nC
Kind of channel: enhancement
Gate-source voltage: 20V
Technology: PowerTrench®
Produkt ist nicht verfügbar
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FDMT1D3N08B fdmt1d3n08b-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 103A; Idm: 864A; 178W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 103A
Pulsed drain current: 864A
Power dissipation: 178W
Case: PQFN8
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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NTMFSC012N15MC ntmfsc012n15mc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 80A; Idm: 1067A; 58W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 80A
Pulsed drain current: 1067A
Power dissipation: 58W
Case: PQFN8
On-state resistance: 11.4mΩ
Mounting: SMD
Gate charge: 32.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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FDMC3020DC fdmc3020dc-d.pdf FAIR-S-A0002365617-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 100A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 50W
Case: PQFN8
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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FDMC4D9P20X8 fdmc4d9p20x8-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -47A; Idm: -335A; 40W; PQFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -47A
Pulsed drain current: -335A
Power dissipation: 40W
Case: PQFN8
On-state resistance: 16.4mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
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FDMC7570S fdmc7570s-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; Idm: 120A; 59W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Pulsed drain current: 120A
Power dissipation: 59W
Case: PQFN8
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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NCS20074DR2G ncs20071-d.pdf
NCS20074DR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Integrated circuit features: rail-to-rail output
Case: SO14
Operating temperature: -40...125°C
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
auf Bestellung 2475 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
140+0.51 EUR
158+0.45 EUR
172+0.42 EUR
186+0.38 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
NCV20074DTBR2G ncs20071-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Integrated circuit features: rail-to-rail output
Case: TSSOP14
Operating temperature: -40...125°C
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
Produkt ist nicht verfügbar
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NCS20074DTBR2G ncs20071-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Integrated circuit features: rail-to-rail output
Case: TSSOP14
Operating temperature: -40...125°C
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
Produkt ist nicht verfügbar
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NCV20074DR2G ncs20071-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Integrated circuit features: rail-to-rail output
Case: SO14
Operating temperature: -40...125°C
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
Produkt ist nicht verfügbar
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MBRS410LT3G MBRS410LT3G-DTE.PDF
MBRS410LT3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 10V; 4A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 10V
Load current: 4A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 0.225V
Kind of package: reel; tape
auf Bestellung 1067 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.47 EUR
54+1.34 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
FDLL300A FDLL300A.pdf
FDLL300A
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 125V; 0.5A; SOD80; Ufmax: 1V; Ifsm: 4A; 500mW
Type of diode: switching
Case: SOD80
Mounting: SMD
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 6pF
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Power dissipation: 0.5W
Max. load current: 0.6A
auf Bestellung 1221 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
772+0.093 EUR
839+0.085 EUR
1055+0.068 EUR
1185+0.06 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
FNB41560 fnb41560b2-d.pdf
FNB41560
+1
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Mounting: THT
Frequency: 20kHz
Number of channels: 6
Power dissipation: 34W
Operating voltage: 13.5...16.5/0...400V DC
Kind of integrated circuit: 3-phase motor controller; IPM
Collector-emitter voltage: 600V
Technology: Motion SPM® 45
Case: SPMAA-A26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Operating temperature: -40...125°C
Output current: 15A
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.02 EUR
12+16.09 EUR
24+13.86 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDD4243 FDD4243.pdf
FDD4243
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -14A; 42W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -14A
Gate charge: 29nC
On-state resistance: 69mΩ
Gate-source voltage: ±20V
Power dissipation: 42W
auf Bestellung 2407 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
86+0.83 EUR
100+0.72 EUR
138+0.52 EUR
Mindestbestellmenge: 61
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NCS20071SN2T1G NCS20071_2_4.PDF
NCS20071SN2T1G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; ±1.35÷18VDC,2.7÷36VDC
Operating temperature: -40...125°C
Type of integrated circuit: operational amplifier
Integrated circuit features: rail-to-rail output
Number of channels: single; 1
Mounting: SMT
Case: TSOP5
Input offset voltage: 4.5mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.8V/μs
Bandwidth: 3MHz
Kind of package: reel; tape
auf Bestellung 2206 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
164+0.44 EUR
170+0.42 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
NTTFS002N04CLTAG nttfs002n04cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 142A
Pulsed drain current: 706A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTTFS002N04CTAG
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTFS002N04CLTAG nvtfs002n04cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 142A
Pulsed drain current: 706A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTFS002N04CTAG
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTFWS002N04CLTAG nvtfs002n04cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 142A
Pulsed drain current: 706A
Power dissipation: 27W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTFWS002N04CTAG nvtfs002n04c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MOC3063M MOC3063M-ONS.pdf
MOC3063M
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: DIP6
Trigger current: 5mA
Mounting: THT
Manufacturer series: MOC3063M
Output voltage: 600V
Produkt ist nicht verfügbar
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