
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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2500+ | 1.09 EUR |
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Technische Details NDS9945 ON Semiconductor
Description: MOSFET 2N-CH 60V 3.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.5A, Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V, Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote NDS9945 nach Preis ab 0.87 EUR bis 4.24 EUR
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NDS9945 | Hersteller : ON Semiconductor |
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auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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NDS9945 | Hersteller : ON Semiconductor |
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auf Bestellung 548 Stücke: Lieferzeit 14-21 Tag (e) |
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NDS9945 | Hersteller : ON Semiconductor |
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auf Bestellung 548 Stücke: Lieferzeit 14-21 Tag (e) |
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NDS9945 | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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NDS9945 | Hersteller : ON Semiconductor |
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auf Bestellung 1046 Stücke: Lieferzeit 14-21 Tag (e) |
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NDS9945 | Hersteller : onsemi / Fairchild |
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auf Bestellung 5413 Stücke: Lieferzeit 10-14 Tag (e) |
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NDS9945 | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 5219 Stücke: Lieferzeit 10-14 Tag (e) |
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NDS9945 | Hersteller : ON Semiconductor |
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auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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NDS9945 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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NDS9945 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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NDS9945 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |