| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| NCP308MT280TBG | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); WDFN6 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1.6...5.5V DC Case: WDFN6 Operating temperature: -40...125°C Mounting: SMD DC supply current: 6µA Maximum output current: 5mA Threshold on-voltage: 2.61V Number of channels: 1 |
Produkt ist nicht verfügbar |
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| NCP308MT300TBG | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1.6...5.5V DC Case: WDFN6 Operating temperature: -40...125°C Mounting: SMD DC supply current: 6µA Maximum output current: 5mA Threshold on-voltage: 2.79V Number of channels: 1 |
Produkt ist nicht verfügbar |
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| NCP308MT330TBG | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1.6...5.5V DC Case: WDFN6 Operating temperature: -40...125°C Mounting: SMD DC supply current: 6µA Maximum output current: 5mA Threshold on-voltage: 3.07V Number of channels: 1 |
Produkt ist nicht verfügbar |
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| NCP308MT500TBG | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1.6...5.5V DC Case: WDFN6 Operating temperature: -40...125°C Mounting: SMD DC supply current: 6µA Maximum output current: 5mA Threshold on-voltage: 4.65V Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCP308MTADJTBG | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1.6...5.5V DC Case: WDFN6 Operating temperature: -40...125°C Mounting: SMD DC supply current: 6µA Maximum output current: 5mA Threshold on-voltage: 0.405V Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCP308SN125T1G | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1.6...5.5V DC Case: TSOP6 Operating temperature: -40...125°C Mounting: SMD DC supply current: 6µA Maximum output current: 5mA Threshold on-voltage: 1.16V Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCP308SN190T1G | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1.6...5.5V DC Case: TSOP6 Operating temperature: -40...125°C Mounting: SMD DC supply current: 6µA Maximum output current: 5mA Threshold on-voltage: 1.77V Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCP308SN250T1G | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1.6...5.5V DC Case: TSOP6 Operating temperature: -40...125°C Mounting: SMD DC supply current: 6µA Maximum output current: 5mA Threshold on-voltage: 2.33V Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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FDMC4435BZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -18A; 31W; MLP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -18A Power dissipation: 31W Case: MLP8 Gate-source voltage: ±25V On-state resistance: 37mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
auf Bestellung 2409 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTD6414ANT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 117A; 100W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Pulsed drain current: 117A Power dissipation: 100W Case: DPAK Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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FDMA1023PZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET Type of transistor: P-MOSFET x2 Technology: PowerTrench® Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.7A Gate charge: 12nC On-state resistance: 0.195Ω Power dissipation: 1.5W Gate-source voltage: ±8V Kind of channel: enhancement Case: MicroFET |
Produkt ist nicht verfügbar |
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| NUP1105LT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode; ESD Type of diode: TVS array Breakdown voltage: 25.7...28.4V Max. forward impulse current: 8A Peak pulse power dissipation: 0.35kW Semiconductor structure: common cathode; double Version: ESD Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Number of channels: 1 Application: CAN Kind of package: reel; tape Leakage current: 0.1µA |
Produkt ist nicht verfügbar |
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| SZNUP1105LT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode; ESD Type of diode: TVS array Breakdown voltage: 25.7...28.4V Max. forward impulse current: 8A Peak pulse power dissipation: 0.35kW Semiconductor structure: common cathode; double Version: ESD Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Number of channels: 1 Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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FDD2582 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 95W; DPAK Technology: PowerTrench® Mounting: SMD Polarisation: unipolar Gate charge: 25nC On-state resistance: 172mΩ Drain current: 21A Gate-source voltage: ±20V Power dissipation: 95W Drain-source voltage: 150V Kind of package: reel; tape Case: DPAK Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MBR30170MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD Case: DFN5 Mounting: SMD Type of diode: Schottky rectifying Leakage current: 50µA Max. forward voltage: 0.89V Max. forward impulse current: 540A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MBR30170MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5x6; SMD; 170V; 30A; reel,tape Case: DFN5x6 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward voltage: 0.74V Max. forward impulse current: 540A Load current: 30A Max. off-state voltage: 170V |
Produkt ist nicht verfügbar |
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1N5948BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 3W; 91V; reel,tape; CASE59; single diode; 1N59xxB Manufacturer series: 1N59xxB Mounting: THT Case: CASE59 Type of diode: Zener Power dissipation: 3W Tolerance: ±5% Zener voltage: 91V Kind of package: reel; tape Semiconductor structure: single diode |
auf Bestellung 4851 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCV8518CPDR2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: SO8 Kind of package: reel; tape Application: automotive industry Output current: 0.25A Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCV8518CPWR2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SO16-W; SMD Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: SO16-W Kind of package: reel; tape Application: automotive industry Output current: 0.25A Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V |
Produkt ist nicht verfügbar |
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| FDP150N10 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 57A Pulsed drain current: 228A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FDP150N10A-F102 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 200A; 91W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 200A Power dissipation: 91W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 16.2nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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DF02M | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1.5A; Ifsm: 50A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 1.5A Max. forward impulse current: 50A Case: MDIP4L Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated Electrical mounting: THT |
Produkt ist nicht verfügbar |
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| NCV8152MX180280TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 0.15A; XDFN6; SMD; Ch: 2 Application: automotive industry Kind of package: reel; tape Case: XDFN6 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Type of integrated circuit: voltage regulator Output current: 0.15A Number of channels: 2 |
Produkt ist nicht verfügbar |
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| NCV8154MW180280TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape Mounting: SMD Kind of package: reel; tape Number of channels: 2 Case: DFN10 Application: automotive industry Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
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| MBR140ESFT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 40V Load current: 1A Max. forward voltage: 0.56V Max. forward impulse current: 30A Semiconductor structure: single diode Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| MBR140SFT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 40V Load current: 1A Max. forward voltage: 0.55V Leakage current: 0.5mA Max. forward impulse current: 30A |
Produkt ist nicht verfügbar |
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| FAN3225TMX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; -5÷5A Mounting: SMD Operating temperature: -40...125°C Kind of integrated circuit: low-side; MOSFET gate driver Kind of package: reel; tape Output current: -5...5A Pulse fall time: 9ns Impulse rise time: 12ns Number of channels: 2 Supply voltage: 4.5...18V DC Case: SO8 Type of integrated circuit: driver Technology: MillerDrive™ Kind of output: inverting; non-inverting |
Produkt ist nicht verfügbar |
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ES3D | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Reverse recovery time: 30ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMC Max. forward voltage: 0.95V Max. forward impulse current: 100A Kind of package: reel; tape Power dissipation: 1.66W Capacitance: 45pF |
auf Bestellung 1847 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS16LT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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SBAS16LT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 30µA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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1SMB5914BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 3.6V; SMD; SMB; reel,tape; single diode; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Case: SMB Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMB59xxB |
auf Bestellung 595 Stücke: Lieferzeit 14-21 Tag (e) |
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LM358AN | ONSEMI |
Category: THT operational amplifiers Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8 Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Number of channels: dual; 2 Mounting: THT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: DIP8 Operating temperature: 0...70°C Slew rate: 0.6V/μs |
Produkt ist nicht verfügbar |
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| FCPF380N65FL1-F154 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10.2A; Idm: 30.6A; 33W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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MBT3946DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.15W Case: SC70-6; SC88; SOT363 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250...300MHz |
auf Bestellung 962 Stücke: Lieferzeit 14-21 Tag (e) |
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MBT3946DW1T2G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.15W Case: SC70-6; SC88; SOT363 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250...300MHz |
auf Bestellung 4627 Stücke: Lieferzeit 14-21 Tag (e) |
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| SMBT3946DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.15W Case: SC70-6; SC88; SOT363 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry |
Produkt ist nicht verfügbar |
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TIL113M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V Type of optocoupler: optocoupler Turn-on time: 5µs Turn-off time: 0.1ms Number of channels: 1 Max. off-state voltage: 3V Collector-emitter voltage: 30V CTR@If: 300%@10mA Insulation voltage: 4.17kV Kind of output: Darlington Case: DIP6 Mounting: THT |
auf Bestellung 968 Stücke: Lieferzeit 14-21 Tag (e) |
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| SZMMSZ5250BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 20V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 20V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
Produkt ist nicht verfügbar |
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| MMSZ5250B | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 20V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 20V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
Produkt ist nicht verfügbar |
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30A02CH-TL-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.7A; 0.7W; CPH3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.7A Power dissipation: 0.7W Case: CPH3 Current gain: 200...500 Mounting: SMD Kind of package: reel; tape Frequency: 520MHz |
auf Bestellung 1157 Stücke: Lieferzeit 14-21 Tag (e) |
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| BZX84C15 | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84C |
Produkt ist nicht verfügbar |
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SZBZX84C15LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84C Application: automotive industry |
auf Bestellung 4500 Stücke: Lieferzeit 14-21 Tag (e) |
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| BZX84C15LT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84C |
Produkt ist nicht verfügbar |
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| SZBZX84C15ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
Produkt ist nicht verfügbar |
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| NLU2G17AMX1TCG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Technology: CMOS Mounting: SMD Case: ULLGA6 Kind of package: reel; tape Supply voltage: 1.65...5.5V DC Kind of input: with Schmitt trigger Operating temperature: -55...125°C Quiescent current: 40µA |
Produkt ist nicht verfügbar |
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| NLX2G17AMX1TCG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6 Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Technology: CMOS Mounting: SMD Case: ULLGA6 Kind of package: reel; tape Supply voltage: 1.65...5.5V DC Kind of input: with Schmitt trigger |
Produkt ist nicht verfügbar |
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BAS16 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Power dissipation: 0.35W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| FDMC3612 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 35W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 16A Power dissipation: 35W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 212mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| FDMC3612-L701 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 15A; 35W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Pulsed drain current: 15A Power dissipation: 35W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 212mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SS29 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 90V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 50A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SS29FA | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 90V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 90V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.85V Max. forward impulse current: 50A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| ES3C | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 150V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 150V Load current: 3A Reverse recovery time: 30ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMC Max. forward voltage: 0.95V Max. forward impulse current: 100A Kind of package: reel; tape Capacitance: 45pF Leakage current: 0.5mA Power dissipation: 1.66W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
FDMC86139P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 40W; WDFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -15A Power dissipation: 40W Case: WDFN8 Gate-source voltage: ±25V On-state resistance: 0.104Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 775 Stücke: Lieferzeit 14-21 Tag (e) |
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 |
FDMC7692 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 40A; 29W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 16A Power dissipation: 29W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 40A |
auf Bestellung 2935 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC510P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -18A; 41W; MLP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -18A Power dissipation: 41W Case: MLP8 Gate-source voltage: ±8V On-state resistance: 17mΩ Mounting: SMD Gate charge: 116nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
FDMC8651 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 41W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Power dissipation: 41W Case: PQFN8 On-state resistance: 9.3mΩ Mounting: SMD Gate charge: 27.2nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±12V Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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|
FDMC8462 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 41W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 20A Power dissipation: 41W Case: PQFN8 On-state resistance: 9.3mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| FDMC8878 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 16.5A; 31W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 16.5A Power dissipation: 31W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FDMC0310AS-F127 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Power dissipation: 36W Case: MLP8 Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 100A Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FDMC8200 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 18/18A; 1.9/2.2W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 18/18A Power dissipation: 1.9/2.2W Case: Power33 Gate-source voltage: ±20/±20V On-state resistance: 32/13.5mΩ Mounting: SMD Gate charge: 10/22nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NCP308MT280TBG |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.61V
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.61V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP308MT300TBG |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.79V
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.79V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP308MT330TBG |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 3.07V
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 3.07V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP308MT500TBG |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 4.65V
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 4.65V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP308MTADJTBG |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 0.405V
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 0.405V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP308SN125T1G |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: TSOP6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.16V
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: TSOP6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.16V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP308SN190T1G |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: TSOP6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.77V
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: TSOP6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 1.77V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP308SN250T1G |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: TSOP6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.33V
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: TSOP6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.33V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC4435BZ |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18A; 31W; MLP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Power dissipation: 31W
Case: MLP8
Gate-source voltage: ±25V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18A; 31W; MLP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Power dissipation: 31W
Case: MLP8
Gate-source voltage: ±25V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
auf Bestellung 2409 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 44+ | 1.64 EUR |
| 52+ | 1.39 EUR |
| 59+ | 1.22 EUR |
| 85+ | 0.85 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.66 EUR |
| NTD6414ANT4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 117A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 117A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 117A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 117A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMA1023PZ |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Gate charge: 12nC
On-state resistance: 0.195Ω
Power dissipation: 1.5W
Gate-source voltage: ±8V
Kind of channel: enhancement
Case: MicroFET
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Gate charge: 12nC
On-state resistance: 0.195Ω
Power dissipation: 1.5W
Gate-source voltage: ±8V
Kind of channel: enhancement
Case: MicroFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NUP1105LT1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode; ESD
Type of diode: TVS array
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common cathode; double
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 1
Application: CAN
Kind of package: reel; tape
Leakage current: 0.1µA
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode; ESD
Type of diode: TVS array
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common cathode; double
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 1
Application: CAN
Kind of package: reel; tape
Leakage current: 0.1µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZNUP1105LT1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode; ESD
Type of diode: TVS array
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common cathode; double
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode; ESD
Type of diode: TVS array
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common cathode; double
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDD2582 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 95W; DPAK
Technology: PowerTrench®
Mounting: SMD
Polarisation: unipolar
Gate charge: 25nC
On-state resistance: 172mΩ
Drain current: 21A
Gate-source voltage: ±20V
Power dissipation: 95W
Drain-source voltage: 150V
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 95W; DPAK
Technology: PowerTrench®
Mounting: SMD
Polarisation: unipolar
Gate charge: 25nC
On-state resistance: 172mΩ
Drain current: 21A
Gate-source voltage: ±20V
Power dissipation: 95W
Drain-source voltage: 150V
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR30170MFST3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD
Case: DFN5
Mounting: SMD
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward voltage: 0.89V
Max. forward impulse current: 540A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD
Case: DFN5
Mounting: SMD
Type of diode: Schottky rectifying
Leakage current: 50µA
Max. forward voltage: 0.89V
Max. forward impulse current: 540A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR30170MFST1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 170V; 30A; reel,tape
Case: DFN5x6
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward voltage: 0.74V
Max. forward impulse current: 540A
Load current: 30A
Max. off-state voltage: 170V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 170V; 30A; reel,tape
Case: DFN5x6
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward voltage: 0.74V
Max. forward impulse current: 540A
Load current: 30A
Max. off-state voltage: 170V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5948BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 91V; reel,tape; CASE59; single diode; 1N59xxB
Manufacturer series: 1N59xxB
Mounting: THT
Case: CASE59
Type of diode: Zener
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 91V
Kind of package: reel; tape
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 3W; 91V; reel,tape; CASE59; single diode; 1N59xxB
Manufacturer series: 1N59xxB
Mounting: THT
Case: CASE59
Type of diode: Zener
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 91V
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 4851 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 343+ | 0.21 EUR |
| 410+ | 0.17 EUR |
| 491+ | 0.15 EUR |
| 685+ | 0.1 EUR |
| NCV8518CPDR2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Application: automotive industry
Output current: 0.25A
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Application: automotive industry
Output current: 0.25A
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Produkt ist nicht verfügbar
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| NCV8518CPWR2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SO16-W; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO16-W
Kind of package: reel; tape
Application: automotive industry
Output current: 0.25A
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SO16-W; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO16-W
Kind of package: reel; tape
Application: automotive industry
Output current: 0.25A
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDP150N10 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FDP150N10A-F102 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 200A; 91W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 91W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 16.2nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 200A; 91W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 91W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 16.2nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DF02M |
|
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV8152MX180280TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.15A; XDFN6; SMD; Ch: 2
Application: automotive industry
Kind of package: reel; tape
Case: XDFN6
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.15A
Number of channels: 2
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.15A; XDFN6; SMD; Ch: 2
Application: automotive industry
Kind of package: reel; tape
Case: XDFN6
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.15A
Number of channels: 2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV8154MW180280TBG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Case: DFN10
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Case: DFN10
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR140ESFT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Max. forward voltage: 0.56V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Max. forward voltage: 0.56V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR140SFT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Max. forward voltage: 0.55V
Leakage current: 0.5mA
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Max. forward voltage: 0.55V
Leakage current: 0.5mA
Max. forward impulse current: 30A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN3225TMX |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; -5÷5A
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of package: reel; tape
Output current: -5...5A
Pulse fall time: 9ns
Impulse rise time: 12ns
Number of channels: 2
Supply voltage: 4.5...18V DC
Case: SO8
Type of integrated circuit: driver
Technology: MillerDrive™
Kind of output: inverting; non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; -5÷5A
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of package: reel; tape
Output current: -5...5A
Pulse fall time: 9ns
Impulse rise time: 12ns
Number of channels: 2
Supply voltage: 4.5...18V DC
Case: SO8
Type of integrated circuit: driver
Technology: MillerDrive™
Kind of output: inverting; non-inverting
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES3D |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 45pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 45pF
auf Bestellung 1847 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 162+ | 0.44 EUR |
| 205+ | 0.35 EUR |
| 227+ | 0.32 EUR |
| 261+ | 0.27 EUR |
| 500+ | 0.25 EUR |
| BAS16LT3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBAS16LT3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1SMB5914BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.6V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.6V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
auf Bestellung 595 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 295+ | 0.24 EUR |
| 365+ | 0.2 EUR |
| 589+ | 0.12 EUR |
| LM358AN |
|
Hersteller: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: dual; 2
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP8
Operating temperature: 0...70°C
Slew rate: 0.6V/μs
Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: dual; 2
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP8
Operating temperature: 0...70°C
Slew rate: 0.6V/μs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCPF380N65FL1-F154 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.2A; Idm: 30.6A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.2A; Idm: 30.6A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBT3946DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250...300MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250...300MHz
auf Bestellung 962 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 385+ | 0.19 EUR |
| 550+ | 0.13 EUR |
| 812+ | 0.088 EUR |
| 958+ | 0.075 EUR |
| 962+ | 0.074 EUR |
| MBT3946DW1T2G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250...300MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250...300MHz
auf Bestellung 4627 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 782+ | 0.092 EUR |
| 1025+ | 0.07 EUR |
| 1530+ | 0.047 EUR |
| 2428+ | 0.029 EUR |
| 3000+ | 0.027 EUR |
| SMBT3946DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TIL113M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Turn-on time: 5µs
Turn-off time: 0.1ms
Number of channels: 1
Max. off-state voltage: 3V
Collector-emitter voltage: 30V
CTR@If: 300%@10mA
Insulation voltage: 4.17kV
Kind of output: Darlington
Case: DIP6
Mounting: THT
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Turn-on time: 5µs
Turn-off time: 0.1ms
Number of channels: 1
Max. off-state voltage: 3V
Collector-emitter voltage: 30V
CTR@If: 300%@10mA
Insulation voltage: 4.17kV
Kind of output: Darlington
Case: DIP6
Mounting: THT
auf Bestellung 968 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 90+ | 0.8 EUR |
| 139+ | 0.52 EUR |
| 162+ | 0.44 EUR |
| 175+ | 0.41 EUR |
| SZMMSZ5250BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ5250B |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 30A02CH-TL-E |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.7A; 0.7W; CPH3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.7A
Power dissipation: 0.7W
Case: CPH3
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 520MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.7A; 0.7W; CPH3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.7A
Power dissipation: 0.7W
Case: CPH3
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 520MHz
auf Bestellung 1157 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 280+ | 0.26 EUR |
| 432+ | 0.17 EUR |
| BZX84C15 |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZBZX84C15LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 1042+ | 0.069 EUR |
| 1421+ | 0.05 EUR |
| 1629+ | 0.044 EUR |
| 2156+ | 0.033 EUR |
| 2393+ | 0.03 EUR |
| 3000+ | 0.026 EUR |
| BZX84C15LT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
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| SZBZX84C15ET1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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| NLU2G17AMX1TCG |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: ULLGA6
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: ULLGA6
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Quiescent current: 40µA
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| NLX2G17AMX1TCG |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: ULLGA6
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Kind of input: with Schmitt trigger
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: ULLGA6
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Kind of input: with Schmitt trigger
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| BAS16 |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
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| FDMC3612 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMC3612-L701 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 15A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 15A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 15A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 15A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SS29 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
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| SS29FA |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
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| ES3C |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
Leakage current: 0.5mA
Power dissipation: 1.66W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
Leakage current: 0.5mA
Power dissipation: 1.66W
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| FDMC86139P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 40W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 40W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 0.104Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 40W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 40W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 0.104Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 775 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.43 EUR |
| 46+ | 1.57 EUR |
| 52+ | 1.4 EUR |
| 56+ | 1.29 EUR |
| 100+ | 1.17 EUR |
| 250+ | 1.07 EUR |
| FDMC7692 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 40A; 29W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 29W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 40A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 40A; 29W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 29W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 40A
auf Bestellung 2935 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 74+ | 0.97 EUR |
| 90+ | 0.8 EUR |
| 113+ | 0.64 EUR |
| FDMC510P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -18A; 41W; MLP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -18A
Power dissipation: 41W
Case: MLP8
Gate-source voltage: ±8V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -18A; 41W; MLP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -18A
Power dissipation: 41W
Case: MLP8
Gate-source voltage: ±8V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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| FDMC8651 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 41W
Case: PQFN8
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 27.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 41W
Case: PQFN8
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 27.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Technology: PowerTrench®
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| FDMC8462 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 41W
Case: PQFN8
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 41W
Case: PQFN8
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
Produkt ist nicht verfügbar
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| FDMC8878 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16.5A; 31W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16.5A
Power dissipation: 31W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16.5A; 31W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16.5A
Power dissipation: 31W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMC0310AS-F127 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 36W
Case: MLP8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 100A
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 36W
Case: MLP8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 100A
Technology: PowerTrench®
Produkt ist nicht verfügbar
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| FDMC8200 |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 18/18A; 1.9/2.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 18/18A
Power dissipation: 1.9/2.2W
Case: Power33
Gate-source voltage: ±20/±20V
On-state resistance: 32/13.5mΩ
Mounting: SMD
Gate charge: 10/22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 18/18A; 1.9/2.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 18/18A
Power dissipation: 1.9/2.2W
Case: Power33
Gate-source voltage: ±20/±20V
On-state resistance: 32/13.5mΩ
Mounting: SMD
Gate charge: 10/22nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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