| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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FQD2P40TM | ONSEMI |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -400V; -0.98A; Idm: -6.24A; 38W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -400V Drain current: -0.98A Pulsed drain current: -6.24A Power dissipation: 38W Case: DPAK Gate-source voltage: ±30V On-state resistance: 6.5Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMBD1503A-D87Z | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.2A Semiconductor structure: double series Capacitance: 4pF Case: SOT23 Max. forward voltage: 1.15V Max. forward impulse current: 2A Power dissipation: 0.35W Kind of package: reel; tape Leakage current: 5µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NSVT30010MXV6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.5W; SOT563 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NST847BF3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.36W; SOT1123 Current gain: 200...450 Kind of package: reel; tape Case: SOT1123 Frequency: 100MHz Collector current: 0.1A Mounting: SMD Collector-emitter voltage: 45V Power dissipation: 0.36W Polarisation: bipolar Type of transistor: NPN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NST846BF3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.347W; SOT1123 Kind of package: reel; tape Case: SOT1123 Frequency: 100MHz Collector current: 0.1A Mounting: SMD Collector-emitter voltage: 65V Power dissipation: 0.347W Polarisation: bipolar Type of transistor: NPN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NST847BDP6T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.42W; SOT963 Current gain: 200...450 Kind of package: reel; tape Case: SOT963 Frequency: 100MHz Collector current: 0.1A Mounting: SMD Collector-emitter voltage: 45V Power dissipation: 0.42W Polarisation: bipolar Type of transistor: NPN x2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NST847BPDP6T5G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A Current gain: 200...450 Kind of package: reel; tape Case: SOT963 Frequency: 100MHz Collector current: 0.1A Mounting: SMD Collector-emitter voltage: 45V Power dissipation: 0.42W Polarisation: bipolar Kind of transistor: complementary pair Type of transistor: NPN / PNP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NVMFS005N10MCLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 108A; Idm: 695A; 65W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 108A Pulsed drain current: 695A Power dissipation: 65W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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1SMB5955BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 180V; SMD; SMB; single diode; reel,tape; 1SMB59xxB Tolerance: ±5% Mounting: SMD Manufacturer series: 1SMB59xxB Power dissipation: 3W Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Zener voltage: 180V Type of diode: Zener |
auf Bestellung 782 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BAL99LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 70V; 0.1A; 6ns; SOT23; reel,tape Type of diode: switching Case: SOT23 Mounting: SMD Max. off-state voltage: 70V Load current: 0.1A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: reel; tape Reverse recovery time: 6ns |
auf Bestellung 2708 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NUP2301MW6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: diode arrays; ESD; SC88; Ch: 2; reel,tape Version: ESD Max. off-state voltage: 70V Kind of package: reel; tape Case: SC88 Type of diode: diode arrays Number of channels: 2 Mounting: SMD |
auf Bestellung 2448 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SZNUP2301MW6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; bidirectional; SC88; Ch: 2; reel,tape Type of diode: TVS array Semiconductor structure: bidirectional Mounting: SMD Case: SC88 Max. off-state voltage: 70V Number of channels: 2 Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NLU1GT126MUTCG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS,TTL; SMD; uDFN6; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Technology: CMOS; TTL Mounting: SMD Case: uDFN6 Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 1.65...5.5V DC Quiescent current: 40µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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SZ1SMA5918BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 5.1V; SMD; SMA; single diode; reel,tape Type of diode: Zener Power dissipation: 1.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Case: SMA Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTBGS6D5N15MC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 121A; 238W; D2PAK-7 Mounting: SMD Case: D2PAK-7 Kind of package: reel; tape Power dissipation: 238W Polarisation: unipolar Drain current: 121A Kind of channel: enhancement Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 8.7mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NTBGS004N10G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 203A; 340W; D2PAK-7 Mounting: SMD Case: D2PAK-7 Kind of package: reel; tape Power dissipation: 340W Polarisation: unipolar Drain current: 203A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 4.1mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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NCP5901MNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; buck; high-side,low-side,gate driver; DFN8 Mounting: SMD Case: DFN8 Operating temperature: -10...125°C Kind of integrated circuit: gate driver; high-side; low-side Topology: buck Supply voltage: 4.5...13.2V DC Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NUF6400MNTBG | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; bidirectional; DFN12; Ch: 6; reel,tape Type of diode: TVS array Semiconductor structure: bidirectional Mounting: SMD Case: DFN12 Number of channels: 6 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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NCP81258MNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; buck; high-side,low-side,gate driver; DFN8 Mounting: SMD Case: DFN8 Operating temperature: -10...125°C Kind of integrated circuit: gate driver; high-side; low-side Topology: buck Supply voltage: 4.5...13.2V DC Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NCP81253MNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge; high-side,low-side,gate driver; DFN8 Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: gate driver; high-side; low-side Case: DFN8 Supply voltage: 4.5...5.5V DC Mounting: SMD Operating temperature: -40...100°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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NCP81080MNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-side,gate driver; DFN8 Mounting: SMD Case: DFN8 Operating temperature: -40...140°C Pulse fall time: 17ns Kind of integrated circuit: gate driver; high-side Impulse rise time: 19ns Topology: MOSFET half-bridge Supply voltage: 5.5...20V DC Output current: -800...500mA Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NCP81145MNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; buck; high-side,low-side,gate driver; DFN8 Mounting: SMD Case: DFN8 Operating temperature: -40...125°C Kind of integrated circuit: gate driver; high-side; low-side Topology: buck Supply voltage: 4.5...5.5V DC Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NCP81146MNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; buck; high-side,low-side,gate driver; DFN8 Mounting: SMD Case: DFN8 Operating temperature: -40...125°C Kind of integrated circuit: gate driver; high-side; low-side Topology: buck Supply voltage: 4.5...13.2V DC Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NCP81074AMNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DFN8; -10÷10A; Ch: 1; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DFN8 Output current: -10...10A Number of channels: 1 Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 7ns Pulse fall time: 7ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NCP81074BMNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DFN8; -10÷10A; Ch: 1; 4.5÷20VDC Mounting: SMD Case: DFN8 Number of channels: 1 Operating temperature: -40...140°C Pulse fall time: 7ns Kind of integrated circuit: gate driver; low-side Impulse rise time: 7ns Supply voltage: 4.5...20V DC Output current: -10...10A Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NCP81151BMNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge; high-side,low-side,gate driver; DFN8 Mounting: SMD Case: DFN8 Operating temperature: -40...100°C Kind of integrated circuit: gate driver; high-side; low-side Topology: H-bridge Supply voltage: 4.5...5.5V DC Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NS5A4684SMNTBG | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; Outputs: 2; WQFN10; 1.65÷5.5VDC; reel,tape Mounting: SMD Supply voltage: 1.65...5.5V DC Type of integrated circuit: analog switch Kind of output: SPDT x2 Operating temperature: -40...85°C Technology: CMOS Quiescent current: 2µA Number of inputs: 2 Kind of package: reel; tape Case: WQFN10 Number of outputs: 2 Number of channels: 2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NB3F8L3005CMNTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: digital; 1.35÷3.465V; Ch: 1; OUT: 5 Mounting: SMD Number of channels: 1 Operating temperature: -40...85°C Number of outputs: 5 Kind of integrated circuit: divider; fanout buffer Supply voltage: 1.35...3.465V Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NCP1253BSN65T1G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.3...0.5A Frequency: 61...71kHz Mounting: SMD Case: TSOP6 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.8...25.5V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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MURS340T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 3A; 75ns; SMC; Ufmax: 1.25V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 3A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SMC Max. forward voltage: 1.25V Kind of package: reel; tape |
auf Bestellung 795 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MC74HCT132ADR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Family: HCT Kind of input: with Schmitt trigger Kind of package: reel; tape Delay time: 25ns Supply voltage: 2...6V DC Kind of gate: NAND Operating temperature: -55...125°C Technology: CMOS |
auf Bestellung 1858 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MC74HCT132ADTG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Family: HCT Kind of input: with Schmitt trigger Kind of package: tube Delay time: 25ns Supply voltage: 2...6V DC Kind of gate: NAND Operating temperature: -55...125°C Technology: CMOS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MC74HCT132ADTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Family: HCT Kind of input: with Schmitt trigger Kind of package: reel; tape Delay time: 25ns Supply voltage: 2...6V DC Kind of gate: NAND Operating temperature: -55...125°C Technology: CMOS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FAN8811TMPX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: PMIC; PFC controller; SMD; WDFN10; -40÷125°C; reel,tape; 8÷16V Mounting: SMD Supply voltage: 8...16V Output current: 3...6A Type of integrated circuit: PMIC Operating temperature: -40...125°C Kind of package: reel; tape Case: WDFN10 Kind of integrated circuit: PFC controller |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FAN8841MPX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: driver; MOSFET half-bridge; half-bridge,MOSFET gate driver Mounting: SMD Supply voltage: 2.7...5.5V DC Type of integrated circuit: driver Protection: undervoltage UVP Operating temperature: -55...150°C Pulse fall time: 330ns Kind of package: tube Case: WQFN24 Kind of integrated circuit: half-bridge; MOSFET gate driver Impulse rise time: 300ns Topology: MOSFET half-bridge |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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MJD50T4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 400V; 1A; 15W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 1A Power dissipation: 15W Case: DPAK Mounting: SMD Kind of package: reel; tape Frequency: 10MHz Current gain: 30...150 |
auf Bestellung 594 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MC74VHCT132ADR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; VHCT Type of integrated circuit: digital Kind of gate: NAND Number of channels: 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOIC14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: VHCT Manufacturer series: VHCT Kind of integrated circuit: Schmitt trigger |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MC74VHCT132ADTRG | ONSEMI |
Category: Gates, inverters Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; VHCT Type of integrated circuit: digital Kind of gate: NAND Number of channels: 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: VHCT Manufacturer series: VHCT Kind of integrated circuit: Schmitt trigger |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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74VHCT74AMTCX | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHCT; SMD; TSSOP14; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Manufacturer series: VHCT Trigger: positive-edge-triggered Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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74VHCT74AMX | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHCT; SMD; SO14; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Manufacturer series: VHCT Trigger: positive-edge-triggered Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MC74VHCT74ADR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHCT; SMD; SO14; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -55...125°C Supply voltage: 4.5...5.5V DC Manufacturer series: VHCT Trigger: positive-edge-triggered Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MC74VHCT74ADTR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS,TTL; VHCT; SMD; TSSOP14 Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Number of inputs: 4 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Family: VHCT Supply voltage: 4.5...5.5V DC Manufacturer series: VHCT Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SMUN2214T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MUN2214T3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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MMBF5486 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 8mA; 0.225W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 8mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MMBF4393LT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 30V; 5mA; 0.225W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 5mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -30V On-state resistance: 100Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA Drain-source voltage: 30V |
auf Bestellung 1491 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SMMBF4393LT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 30V; 30mA; 225mW; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 30mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -30V On-state resistance: 100Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA Drain-source voltage: 30V |
auf Bestellung 2906 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MJD210G | ONSEMI |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; 25V; 5A; 12.5W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 5A Power dissipation: 12.5W Case: DPAK Current gain: 45...180 Mounting: SMD Kind of package: tube Frequency: 65MHz |
auf Bestellung 302 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NJD1718T4G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 2A; 15W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 2A Power dissipation: 15W Case: DPAK Current gain: 70...240 Mounting: SMD Kind of package: reel; tape Frequency: 80MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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2SB1215S-TL-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 3A; 1W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 1W Case: DPAK Current gain: 140...280 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NC7SZ373P6X | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 1; 1.65÷5.5VDC; SMD; SC70-6; 7SZ; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 1 Supply voltage: 1.65...5.5V DC Mounting: SMD Case: SC70-6 Operating temperature: -40...85°C Kind of output: 3-state Trigger: level-triggered Manufacturer series: 7SZ |
auf Bestellung 2602 Stücke: Lieferzeit 14-21 Tag (e) |
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FGP3440G2-F085 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 400V; 25A; 166W; TO220-3; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25A Power dissipation: 166W Case: TO220-3 Gate-emitter voltage: ±10V Mounting: THT Kind of package: tube Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
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| NVMFS6H801NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 160A Power dissipation: 83W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 900A Gate charge: 90nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NVMFS6H801NLWFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 160A Power dissipation: 83W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 900A Gate charge: 90nC |
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Im Einkaufswagen Stück im Wert von UAH | |
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FDD6685 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; DPAK Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -40A Power dissipation: 52W Case: DPAK Gate-source voltage: ±25V On-state resistance: 30mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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KSP13TA | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 0.625W; TO92 Kind of transistor: Darlington Type of transistor: NPN Kind of package: Ammo Pack Case: TO92 Collector current: 0.5A Mounting: THT Collector-emitter voltage: 30V Power dissipation: 0.625W Polarisation: bipolar |
auf Bestellung 437 Stücke: Lieferzeit 14-21 Tag (e) |
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| FGY100T65SCDT | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3 Mounting: THT Collector-emitter voltage: 650V Power dissipation: 375W Gate charge: 157nC Pulsed collector current: 300A Type of transistor: IGBT Kind of package: tube Case: TO247-3 Gate-emitter voltage: ±25V Collector current: 100A |
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MC74VHC240DTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,bus buffer,octal,line driver; Ch: 8; CMOS Type of integrated circuit: digital Kind of integrated circuit: 3-state; bus buffer; line driver; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 2...5.5V DC Family: VHC Manufacturer series: VHC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MC74VHC240DWR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,bus buffer,octal,line driver; Ch: 8; CMOS Type of integrated circuit: digital Kind of integrated circuit: 3-state; bus buffer; line driver; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: SOIC20 Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 2...5.5V DC Family: VHC Manufacturer series: VHC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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TIP117G | ONSEMI |
Category: PNP THT Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 100V; 2A; 2W; TO220AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 2W Case: TO220AB Mounting: THT Kind of package: tube |
auf Bestellung 183 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQD2P40TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -0.98A; Idm: -6.24A; 38W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -0.98A
Pulsed drain current: -6.24A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 6.5Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -0.98A; Idm: -6.24A; 38W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Drain current: -0.98A
Pulsed drain current: -6.24A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 6.5Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBD1503A-D87Z |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 4pF
Case: SOT23
Max. forward voltage: 1.15V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 4pF
Case: SOT23
Max. forward voltage: 1.15V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Leakage current: 5µA
Produkt ist nicht verfügbar
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| NSVT30010MXV6T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.5W; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.5W; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NST847BF3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.36W; SOT1123
Current gain: 200...450
Kind of package: reel; tape
Case: SOT1123
Frequency: 100MHz
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 45V
Power dissipation: 0.36W
Polarisation: bipolar
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.36W; SOT1123
Current gain: 200...450
Kind of package: reel; tape
Case: SOT1123
Frequency: 100MHz
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 45V
Power dissipation: 0.36W
Polarisation: bipolar
Type of transistor: NPN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NST846BF3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.347W; SOT1123
Kind of package: reel; tape
Case: SOT1123
Frequency: 100MHz
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 65V
Power dissipation: 0.347W
Polarisation: bipolar
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.347W; SOT1123
Kind of package: reel; tape
Case: SOT1123
Frequency: 100MHz
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 65V
Power dissipation: 0.347W
Polarisation: bipolar
Type of transistor: NPN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NST847BDP6T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.42W; SOT963
Current gain: 200...450
Kind of package: reel; tape
Case: SOT963
Frequency: 100MHz
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 45V
Power dissipation: 0.42W
Polarisation: bipolar
Type of transistor: NPN x2
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.42W; SOT963
Current gain: 200...450
Kind of package: reel; tape
Case: SOT963
Frequency: 100MHz
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 45V
Power dissipation: 0.42W
Polarisation: bipolar
Type of transistor: NPN x2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NST847BPDP6T5G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Current gain: 200...450
Kind of package: reel; tape
Case: SOT963
Frequency: 100MHz
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 45V
Power dissipation: 0.42W
Polarisation: bipolar
Kind of transistor: complementary pair
Type of transistor: NPN / PNP
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Current gain: 200...450
Kind of package: reel; tape
Case: SOT963
Frequency: 100MHz
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 45V
Power dissipation: 0.42W
Polarisation: bipolar
Kind of transistor: complementary pair
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NVMFS005N10MCLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; Idm: 695A; 65W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 108A
Pulsed drain current: 695A
Power dissipation: 65W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; Idm: 695A; 65W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 108A
Pulsed drain current: 695A
Power dissipation: 65W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| 1SMB5955BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 180V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Tolerance: ±5%
Mounting: SMD
Manufacturer series: 1SMB59xxB
Power dissipation: 3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Zener voltage: 180V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 180V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Tolerance: ±5%
Mounting: SMD
Manufacturer series: 1SMB59xxB
Power dissipation: 3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Zener voltage: 180V
Type of diode: Zener
auf Bestellung 782 Stücke:
Lieferzeit 14-21 Tag (e)
| BAL99LT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.1A; 6ns; SOT23; reel,tape
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Reverse recovery time: 6ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.1A; 6ns; SOT23; reel,tape
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Reverse recovery time: 6ns
auf Bestellung 2708 Stücke:
Lieferzeit 14-21 Tag (e)
| NUP2301MW6T1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: diode arrays; ESD; SC88; Ch: 2; reel,tape
Version: ESD
Max. off-state voltage: 70V
Kind of package: reel; tape
Case: SC88
Type of diode: diode arrays
Number of channels: 2
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: diode arrays; ESD; SC88; Ch: 2; reel,tape
Version: ESD
Max. off-state voltage: 70V
Kind of package: reel; tape
Case: SC88
Type of diode: diode arrays
Number of channels: 2
Mounting: SMD
auf Bestellung 2448 Stücke:
Lieferzeit 14-21 Tag (e)
| SZNUP2301MW6T1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SC88; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: bidirectional
Mounting: SMD
Case: SC88
Max. off-state voltage: 70V
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SC88; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: bidirectional
Mounting: SMD
Case: SC88
Max. off-state voltage: 70V
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NLU1GT126MUTCG |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS,TTL; SMD; uDFN6; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: uDFN6
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS,TTL; SMD; uDFN6; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: uDFN6
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 40µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SZ1SMA5918BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.1V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.1V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NTBGS6D5N15MC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 121A; 238W; D2PAK-7
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Power dissipation: 238W
Polarisation: unipolar
Drain current: 121A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 121A; 238W; D2PAK-7
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Power dissipation: 238W
Polarisation: unipolar
Drain current: 121A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| NTBGS004N10G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 203A; 340W; D2PAK-7
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Power dissipation: 340W
Polarisation: unipolar
Drain current: 203A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 203A; 340W; D2PAK-7
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Power dissipation: 340W
Polarisation: unipolar
Drain current: 203A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| NCP5901MNTBG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Mounting: SMD
Case: DFN8
Operating temperature: -10...125°C
Kind of integrated circuit: gate driver; high-side; low-side
Topology: buck
Supply voltage: 4.5...13.2V DC
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Mounting: SMD
Case: DFN8
Operating temperature: -10...125°C
Kind of integrated circuit: gate driver; high-side; low-side
Topology: buck
Supply voltage: 4.5...13.2V DC
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NUF6400MNTBG |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; DFN12; Ch: 6; reel,tape
Type of diode: TVS array
Semiconductor structure: bidirectional
Mounting: SMD
Case: DFN12
Number of channels: 6
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; DFN12; Ch: 6; reel,tape
Type of diode: TVS array
Semiconductor structure: bidirectional
Mounting: SMD
Case: DFN12
Number of channels: 6
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP81258MNTBG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Mounting: SMD
Case: DFN8
Operating temperature: -10...125°C
Kind of integrated circuit: gate driver; high-side; low-side
Topology: buck
Supply voltage: 4.5...13.2V DC
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Mounting: SMD
Case: DFN8
Operating temperature: -10...125°C
Kind of integrated circuit: gate driver; high-side; low-side
Topology: buck
Supply voltage: 4.5...13.2V DC
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP81253MNTBG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...100°C
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...100°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCP81080MNTBG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; DFN8
Mounting: SMD
Case: DFN8
Operating temperature: -40...140°C
Pulse fall time: 17ns
Kind of integrated circuit: gate driver; high-side
Impulse rise time: 19ns
Topology: MOSFET half-bridge
Supply voltage: 5.5...20V DC
Output current: -800...500mA
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; DFN8
Mounting: SMD
Case: DFN8
Operating temperature: -40...140°C
Pulse fall time: 17ns
Kind of integrated circuit: gate driver; high-side
Impulse rise time: 19ns
Topology: MOSFET half-bridge
Supply voltage: 5.5...20V DC
Output current: -800...500mA
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP81145MNTBG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Mounting: SMD
Case: DFN8
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-side; low-side
Topology: buck
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Mounting: SMD
Case: DFN8
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-side; low-side
Topology: buck
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP81146MNTBG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Mounting: SMD
Case: DFN8
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-side; low-side
Topology: buck
Supply voltage: 4.5...13.2V DC
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Mounting: SMD
Case: DFN8
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-side; low-side
Topology: buck
Supply voltage: 4.5...13.2V DC
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP81074AMNTBG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -10÷10A; Ch: 1; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -10...10A
Number of channels: 1
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 7ns
Pulse fall time: 7ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -10÷10A; Ch: 1; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -10...10A
Number of channels: 1
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 7ns
Pulse fall time: 7ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP81074BMNTBG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -10÷10A; Ch: 1; 4.5÷20VDC
Mounting: SMD
Case: DFN8
Number of channels: 1
Operating temperature: -40...140°C
Pulse fall time: 7ns
Kind of integrated circuit: gate driver; low-side
Impulse rise time: 7ns
Supply voltage: 4.5...20V DC
Output current: -10...10A
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -10÷10A; Ch: 1; 4.5÷20VDC
Mounting: SMD
Case: DFN8
Number of channels: 1
Operating temperature: -40...140°C
Pulse fall time: 7ns
Kind of integrated circuit: gate driver; low-side
Impulse rise time: 7ns
Supply voltage: 4.5...20V DC
Output current: -10...10A
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP81151BMNTBG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; DFN8
Mounting: SMD
Case: DFN8
Operating temperature: -40...100°C
Kind of integrated circuit: gate driver; high-side; low-side
Topology: H-bridge
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; DFN8
Mounting: SMD
Case: DFN8
Operating temperature: -40...100°C
Kind of integrated circuit: gate driver; high-side; low-side
Topology: H-bridge
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NS5A4684SMNTBG |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; Outputs: 2; WQFN10; 1.65÷5.5VDC; reel,tape
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: analog switch
Kind of output: SPDT x2
Operating temperature: -40...85°C
Technology: CMOS
Quiescent current: 2µA
Number of inputs: 2
Kind of package: reel; tape
Case: WQFN10
Number of outputs: 2
Number of channels: 2
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; Outputs: 2; WQFN10; 1.65÷5.5VDC; reel,tape
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: analog switch
Kind of output: SPDT x2
Operating temperature: -40...85°C
Technology: CMOS
Quiescent current: 2µA
Number of inputs: 2
Kind of package: reel; tape
Case: WQFN10
Number of outputs: 2
Number of channels: 2
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
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| NB3F8L3005CMNTBG |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: digital; 1.35÷3.465V; Ch: 1; OUT: 5
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Number of outputs: 5
Kind of integrated circuit: divider; fanout buffer
Supply voltage: 1.35...3.465V
Type of integrated circuit: digital
Category: Serial EEPROM memories - integ. circ.
Description: IC: digital; 1.35÷3.465V; Ch: 1; OUT: 5
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Number of outputs: 5
Kind of integrated circuit: divider; fanout buffer
Supply voltage: 1.35...3.465V
Type of integrated circuit: digital
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| NCP1253BSN65T1G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 61...71kHz
Mounting: SMD
Case: TSOP6
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...25.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 61...71kHz
Mounting: SMD
Case: TSOP6
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...25.5V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MURS340T3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 75ns; SMC; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.25V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 75ns; SMC; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.25V
Kind of package: reel; tape
auf Bestellung 795 Stücke:
Lieferzeit 14-21 Tag (e)
| MC74HCT132ADR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: HCT
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Delay time: 25ns
Supply voltage: 2...6V DC
Kind of gate: NAND
Operating temperature: -55...125°C
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: HCT
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Delay time: 25ns
Supply voltage: 2...6V DC
Kind of gate: NAND
Operating temperature: -55...125°C
Technology: CMOS
auf Bestellung 1858 Stücke:
Lieferzeit 14-21 Tag (e)
| MC74HCT132ADTG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: HCT
Kind of input: with Schmitt trigger
Kind of package: tube
Delay time: 25ns
Supply voltage: 2...6V DC
Kind of gate: NAND
Operating temperature: -55...125°C
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: HCT
Kind of input: with Schmitt trigger
Kind of package: tube
Delay time: 25ns
Supply voltage: 2...6V DC
Kind of gate: NAND
Operating temperature: -55...125°C
Technology: CMOS
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74HCT132ADTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: HCT
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Delay time: 25ns
Supply voltage: 2...6V DC
Kind of gate: NAND
Operating temperature: -55...125°C
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: HCT
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Delay time: 25ns
Supply voltage: 2...6V DC
Kind of gate: NAND
Operating temperature: -55...125°C
Technology: CMOS
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FAN8811TMPX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: PMIC; PFC controller; SMD; WDFN10; -40÷125°C; reel,tape; 8÷16V
Mounting: SMD
Supply voltage: 8...16V
Output current: 3...6A
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: WDFN10
Kind of integrated circuit: PFC controller
Category: Buffers, transceivers, drivers
Description: IC: PMIC; PFC controller; SMD; WDFN10; -40÷125°C; reel,tape; 8÷16V
Mounting: SMD
Supply voltage: 8...16V
Output current: 3...6A
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: WDFN10
Kind of integrated circuit: PFC controller
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN8841MPX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: driver; MOSFET half-bridge; half-bridge,MOSFET gate driver
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: driver
Protection: undervoltage UVP
Operating temperature: -55...150°C
Pulse fall time: 330ns
Kind of package: tube
Case: WQFN24
Kind of integrated circuit: half-bridge; MOSFET gate driver
Impulse rise time: 300ns
Topology: MOSFET half-bridge
Category: Buffers, transceivers, drivers
Description: IC: driver; MOSFET half-bridge; half-bridge,MOSFET gate driver
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: driver
Protection: undervoltage UVP
Operating temperature: -55...150°C
Pulse fall time: 330ns
Kind of package: tube
Case: WQFN24
Kind of integrated circuit: half-bridge; MOSFET gate driver
Impulse rise time: 300ns
Topology: MOSFET half-bridge
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJD50T4G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 15W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Frequency: 10MHz
Current gain: 30...150
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 15W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Frequency: 10MHz
Current gain: 30...150
auf Bestellung 594 Stücke:
Lieferzeit 14-21 Tag (e)
| MC74VHCT132ADR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; VHCT
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: VHCT
Manufacturer series: VHCT
Kind of integrated circuit: Schmitt trigger
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; VHCT
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: VHCT
Manufacturer series: VHCT
Kind of integrated circuit: Schmitt trigger
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74VHCT132ADTRG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; VHCT
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: VHCT
Manufacturer series: VHCT
Kind of integrated circuit: Schmitt trigger
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; VHCT
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: VHCT
Manufacturer series: VHCT
Kind of integrated circuit: Schmitt trigger
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 74VHCT74AMTCX |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHCT; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Manufacturer series: VHCT
Trigger: positive-edge-triggered
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHCT; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Manufacturer series: VHCT
Trigger: positive-edge-triggered
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 74VHCT74AMX |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHCT; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Manufacturer series: VHCT
Trigger: positive-edge-triggered
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHCT; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Manufacturer series: VHCT
Trigger: positive-edge-triggered
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74VHCT74ADR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHCT; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Manufacturer series: VHCT
Trigger: positive-edge-triggered
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHCT; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Manufacturer series: VHCT
Trigger: positive-edge-triggered
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74VHCT74ADTR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS,TTL; VHCT; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: VHCT
Supply voltage: 4.5...5.5V DC
Manufacturer series: VHCT
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS,TTL; VHCT; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: VHCT
Supply voltage: 4.5...5.5V DC
Manufacturer series: VHCT
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMUN2214T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUN2214T3G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMBF5486 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 8mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 8mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMBF4393LT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 100Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 100Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Drain-source voltage: 30V
auf Bestellung 1491 Stücke:
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| SMMBF4393LT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 30mA; 225mW; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 30mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 100Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 30mA; 225mW; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 30mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 100Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Drain-source voltage: 30V
auf Bestellung 2906 Stücke:
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| MJD210G |
|
Hersteller: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; 25V; 5A; 12.5W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 12.5W
Case: DPAK
Current gain: 45...180
Mounting: SMD
Kind of package: tube
Frequency: 65MHz
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; 25V; 5A; 12.5W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 12.5W
Case: DPAK
Current gain: 45...180
Mounting: SMD
Kind of package: tube
Frequency: 65MHz
auf Bestellung 302 Stücke:
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| NJD1718T4G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 15W
Case: DPAK
Current gain: 70...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 15W
Case: DPAK
Current gain: 70...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
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| 2SB1215S-TL-E |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 1W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 1W
Case: DPAK
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 1W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 1W
Case: DPAK
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
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| NC7SZ373P6X |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 1; 1.65÷5.5VDC; SMD; SC70-6; 7SZ; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: SC70-6
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: level-triggered
Manufacturer series: 7SZ
Category: Latches
Description: IC: digital; D latch; Ch: 1; 1.65÷5.5VDC; SMD; SC70-6; 7SZ; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: SC70-6
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: level-triggered
Manufacturer series: 7SZ
auf Bestellung 2602 Stücke:
Lieferzeit 14-21 Tag (e)
| FGP3440G2-F085 |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 166W; TO220-3; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 166W
Case: TO220-3
Gate-emitter voltage: ±10V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: THT IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 166W; TO220-3; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 166W
Case: TO220-3
Gate-emitter voltage: ±10V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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| NVMFS6H801NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 900A
Gate charge: 90nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 900A
Gate charge: 90nC
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| NVMFS6H801NLWFT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Power dissipation: 83W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 900A
Gate charge: 90nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Power dissipation: 83W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 900A
Gate charge: 90nC
Produkt ist nicht verfügbar
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| FDD6685 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| KSP13TA |
|
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 0.625W; TO92
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: Ammo Pack
Case: TO92
Collector current: 0.5A
Mounting: THT
Collector-emitter voltage: 30V
Power dissipation: 0.625W
Polarisation: bipolar
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 0.625W; TO92
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: Ammo Pack
Case: TO92
Collector current: 0.5A
Mounting: THT
Collector-emitter voltage: 30V
Power dissipation: 0.625W
Polarisation: bipolar
auf Bestellung 437 Stücke:
Lieferzeit 14-21 Tag (e)
| FGY100T65SCDT |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3
Mounting: THT
Collector-emitter voltage: 650V
Power dissipation: 375W
Gate charge: 157nC
Pulsed collector current: 300A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±25V
Collector current: 100A
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3
Mounting: THT
Collector-emitter voltage: 650V
Power dissipation: 375W
Gate charge: 157nC
Pulsed collector current: 300A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±25V
Collector current: 100A
Produkt ist nicht verfügbar
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| MC74VHC240DTR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal,line driver; Ch: 8; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Family: VHC
Manufacturer series: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal,line driver; Ch: 8; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Family: VHC
Manufacturer series: VHC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| MC74VHC240DWR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal,line driver; Ch: 8; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Family: VHC
Manufacturer series: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal,line driver; Ch: 8; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Family: VHC
Manufacturer series: VHC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| TIP117G |
|
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 2A; 2W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 2A; 2W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
auf Bestellung 183 Stücke:
Lieferzeit 14-21 Tag (e)