NTBGS6D5N15MC ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - NTBGS6D5N15MC - Leistungs-MOSFET, n-Kanal, 150 V, 121 A, 5500 µohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 150V
rohsCompliant: YES
Dauer-Drainstrom Id: 121A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3.5V
Verlustleistung: 238W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 7Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 5500µohm
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Technische Details NTBGS6D5N15MC ONSEMI
Description: ONSEMI - NTBGS6D5N15MC - Leistungs-MOSFET, n-Kanal, 150 V, 121 A, 5500 µohm, TO-263 (D2PAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 150V, rohsCompliant: YES, Dauer-Drainstrom Id: 121A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 3.5V, Verlustleistung: 238W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: TO-263 (D2PAK), Anzahl der Pins: 7Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 5500µohm.
Weitere Produktangebote NTBGS6D5N15MC nach Preis ab 5.46 EUR bis 13.78 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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NTBGS6D5N15MC | onsemi |
MOSFETs Power MOSFET, 150 V, 6.5 mohm, A, Single N-Channel, D2PAK7 |
auf Bestellung 1229 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBGS6D5N15MC | onsemi |
Description: MOSFET N-CH 150V 15A/121A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 121A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 69A, 10V Power Dissipation (Max): 3.7W (Ta), 238W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 379µA Supplier Device Package: D2PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4745 pF @ 75 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBGS6D5N15MC | ONSEMI |
Description: ONSEMI - NTBGS6D5N15MC - Leistungs-MOSFET, n-Kanal, 150 V, 121 A, 5500 µohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 121A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 3.5V Verlustleistung: 238W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 5500µohm |
auf Bestellung 610 Stücke: Lieferzeit 14-21 Tag (e) |
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NTBGS6D5N15MC | onsemi |
Description: MOSFET N-CH 150V 15A/121A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 121A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 69A, 10V Power Dissipation (Max): 3.7W (Ta), 238W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 379µA Supplier Device Package: D2PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4745 pF @ 75 V |
auf Bestellung 12530 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBGS6D5N15MC | ON Semiconductor |
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auf Bestellung 770 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTBGS6D5N15MC |
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Hersteller: onsemi
MOSFETs Power MOSFET, 150 V, 6.5 mohm, A, Single N-Channel, D2PAK7
MOSFETs Power MOSFET, 150 V, 6.5 mohm, A, Single N-Channel, D2PAK7
auf Bestellung 1229 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.69 EUR |
| 10+ | 5.71 EUR |
| 800+ | 5.46 EUR |
| NTBGS6D5N15MC |
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Hersteller: onsemi
Description: MOSFET N-CH 150V 15A/121A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 69A, 10V
Power Dissipation (Max): 3.7W (Ta), 238W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 379µA
Supplier Device Package: D2PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4745 pF @ 75 V
Description: MOSFET N-CH 150V 15A/121A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 69A, 10V
Power Dissipation (Max): 3.7W (Ta), 238W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 379µA
Supplier Device Package: D2PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4745 pF @ 75 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 8.64 EUR |
| 1600+ | 7.28 EUR |
| 2400+ | 6.91 EUR |
| NTBGS6D5N15MC |
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Hersteller: ONSEMI
Description: ONSEMI - NTBGS6D5N15MC - Leistungs-MOSFET, n-Kanal, 150 V, 121 A, 5500 µohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 150V
rohsCompliant: YES
Dauer-Drainstrom Id: 121A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3.5V
Verlustleistung: 238W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 7Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 5500µohm
Description: ONSEMI - NTBGS6D5N15MC - Leistungs-MOSFET, n-Kanal, 150 V, 121 A, 5500 µohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 150V
rohsCompliant: YES
Dauer-Drainstrom Id: 121A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3.5V
Verlustleistung: 238W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 7Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 5500µohm
auf Bestellung 610 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 13.02 EUR |
| 24+ | 9.97 EUR |
| 100+ | 7.13 EUR |
| 500+ | 6.21 EUR |
| NTBGS6D5N15MC |
|
Hersteller: onsemi
Description: MOSFET N-CH 150V 15A/121A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 69A, 10V
Power Dissipation (Max): 3.7W (Ta), 238W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 379µA
Supplier Device Package: D2PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4745 pF @ 75 V
Description: MOSFET N-CH 150V 15A/121A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 69A, 10V
Power Dissipation (Max): 3.7W (Ta), 238W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 379µA
Supplier Device Package: D2PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4745 pF @ 75 V
auf Bestellung 12530 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.78 EUR |
| 10+ | 12.38 EUR |
| 25+ | 11.7 EUR |
| 100+ | 10.14 EUR |
| 250+ | 9.63 EUR |
| NTBGS6D5N15MC |
|
Hersteller: ON Semiconductor
auf Bestellung 770 Stücke:
Lieferzeit 21-28 Tag (e)