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NVMFS005N10MCLT1G

NVMFS005N10MCLT1G onsemi

nvmfs005n10mcl-d.pdf Hersteller: onsemi
Description: PTNG 100V LL SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.4A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 34A, 10V
Power Dissipation (Max): 3.8W (Ta), 131W (Tc)
Vgs(th) (Max) @ Id: 3V @ 192µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 19500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.32 EUR
3000+1.26 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVMFS005N10MCLT1G onsemi

Description: PTNG 100V LL SO8FL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18.4A (Ta), 108A (Tc), Rds On (Max) @ Id, Vgs: 5.1mOhm @ 34A, 10V, Power Dissipation (Max): 3.8W (Ta), 131W (Tc), Vgs(th) (Max) @ Id: 3V @ 192µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 50 V, Qualification: AEC-Q101.

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NVMFS005N10MCLT1G NVMFS005N10MCLT1G Hersteller : onsemi NVMFS005N10MCL_D-2319495.pdf MOSFETs MOSFET - Power, Single, N-Channel100 V, 5.1 mohm, 108A DFN5 (Pb-Free)
auf Bestellung 2018 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.13 EUR
10+2.6 EUR
100+1.9 EUR
500+1.52 EUR
1500+1.34 EUR
3000+1.32 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS005N10MCLT1G NVMFS005N10MCLT1G Hersteller : onsemi nvmfs005n10mcl-d.pdf Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.4A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 34A, 10V
Power Dissipation (Max): 3.8W (Ta), 131W (Tc)
Vgs(th) (Max) @ Id: 3V @ 192µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 19500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.19 EUR
10+2.71 EUR
100+1.86 EUR
500+1.49 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS005N10MCLT1G Hersteller : ON Semiconductor nvmfs005n10mcl-d.pdf MOSFET Power, Single, N Channel 100 V, 5.1 m, 108A
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NVMFS005N10MCLT1G Hersteller : ON Semiconductor nvmfs005n10mcl-d.pdf Trans MOSFET N-CH 100V 18.4A 5-Pin SO-FL EP T/R Automotive AEC-Q101
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NVMFS005N10MCLT1G Hersteller : ONSEMI nvmfs005n10mcl-d.pdf NVMFS005N10MCLT1G SMD N channel transistors
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