NJD1718T4G onsemi
Hersteller: onsemi
Description: TRANS PNP 50V 2A DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power - Max: 1.68 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: DPAK
Frequency - Transition: 80MHz
| Anzahl | Preis |
|---|---|
| 2500+ | 0.37 EUR |
| 5000+ | 0.34 EUR |
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Technische Details NJD1718T4G onsemi
Description: TRANS PNP 50V 2A DPAK, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Power - Max: 1.68 W, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 2 A, Supplier Device Package: DPAK, Frequency - Transition: 80MHz.
Weitere Produktangebote NJD1718T4G nach Preis ab 0.33 EUR bis 1.5 EUR
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NJD1718T4G | Hersteller : onsemi |
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NJD1718T4G | Hersteller : onsemi |
Description: TRANS PNP 50V 2A DPAK Power - Max: 1.68 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 2 A Supplier Device Package: DPAK Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 7446 Stücke: Lieferzeit 10-14 Tag (e) |
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NJD1718T4G | Hersteller : ON Semiconductor |
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