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NSVT30010MXV6T1G

NSVT30010MXV6T1G onsemi

nst30010mxv6-d.pdf
Hersteller: onsemi
Description: TRANS 2PNP 30V 100MA SOT-563
Supplier Device Package: SOT-563
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
auf Bestellung 52000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.19 EUR
8000+0.17 EUR
12000+0.16 EUR
28000+0.15 EUR
40000+0.14 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NSVT30010MXV6T1G onsemi

Description: TRANS 2PNP 30V 100MA SOT-563, Supplier Device Package: SOT-563, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA, Voltage - Collector Emitter Breakdown (Max): 30V, Current - Collector (Ic) (Max): 100mA, Power - Max: 500mW, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: 2 PNP (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).

Weitere Produktangebote NSVT30010MXV6T1G nach Preis ab 0.16 EUR bis 0.9 EUR

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NSVT30010MXV6T1G NSVT30010MXV6T1G onsemi nst30010mxv6-d.pdf Bipolar Transistors - BJT DUAL MATCHED PNP GP XTT
auf Bestellung 35601 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.85 EUR
10+0.52 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.22 EUR
2000+0.2 EUR
4000+0.16 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
NSVT30010MXV6T1G NSVT30010MXV6T1G onsemi nst30010mxv6-d.pdf Description: TRANS 2PNP 30V 100MA SOT-563
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-563
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
auf Bestellung 59960 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.9 EUR
33+0.55 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.23 EUR
2000+0.21 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
NSVT30010MXV6T1G nst30010mxv6-d.pdf
NSVT30010MXV6T1G
Hersteller: onsemi
Bipolar Transistors - BJT DUAL MATCHED PNP GP XTT
auf Bestellung 35601 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.85 EUR
10+0.52 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.22 EUR
2000+0.2 EUR
4000+0.16 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
NSVT30010MXV6T1G nst30010mxv6-d.pdf
NSVT30010MXV6T1G
Hersteller: onsemi
Description: TRANS 2PNP 30V 100MA SOT-563
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-563
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
auf Bestellung 59960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.9 EUR
33+0.55 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.23 EUR
2000+0.21 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH