| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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| NCV8154MW330330TBG | ONSEMI |
 Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape Mounting: SMD Case: DFN10 Number of channels: 2 Application: automotive industry Kind of package: reel; tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FAN7527BMX | ONSEMI |
Category: Drivers - integrated circuits Description: IC: PMIC; SOIC8 Type of integrated circuit: PMIC Mounting: SMD Operating temperature: -25...125°C Case: SOIC8 |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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ES1B | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A Mounting: SMD Semiconductor structure: single diode Max. forward voltage: 0.92V Load current: 1A Type of diode: rectifying Power dissipation: 1.47W Features of semiconductor devices: fast switching Case: SMA Max. forward impulse current: 30A Max. off-state voltage: 0.1kV Capacitance: 7pF Kind of package: reel; tape Reverse recovery time: 15ns Leakage current: 0.1mA |
auf Bestellung 1365 Stücke: Lieferzeit 14-21 Tag (e) |
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ES1C | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 150V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A Mounting: SMD Capacitance: 7pF Power dissipation: 1.47W Max. forward impulse current: 30A Max. off-state voltage: 150V Kind of package: reel; tape Case: SMA Features of semiconductor devices: fast switching Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 15ns Leakage current: 0.1mA Max. forward voltage: 0.92V Load current: 1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MJE253G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 100V; 4A; 15W; TO225 Case: TO225 Mounting: THT Collector-emitter voltage: 100V Power dissipation: 15W Polarisation: bipolar Type of transistor: PNP Current gain: 40...180 Kind of package: bulk Frequency: 40MHz Collector current: 4A |
auf Bestellung 330 Stücke: Lieferzeit 14-21 Tag (e) |
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MJE243G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 4A; 15W; TO225 Case: TO225 Mounting: THT Collector-emitter voltage: 100V Power dissipation: 15W Polarisation: bipolar Type of transistor: NPN Current gain: 40...180 Kind of package: bulk Frequency: 40MHz Collector current: 4A |
auf Bestellung 881 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDMS86350ET80 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 140A; 187W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 140A Power dissipation: 187W Case: PQFN8 On-state resistance: 3.8mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FDMS86150 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 187W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 90A Power dissipation: 187W Case: PQFN8 On-state resistance: 9.1mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FDMC86324 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 20A Power dissipation: 41W Case: PQFN8 On-state resistance: 40mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FDMS0306AS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 49A Pulsed drain current: 100A Power dissipation: 59W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTTFS1D2N02P1E | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 180A; Idm: 195A; 52W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 180A Pulsed drain current: 195A Power dissipation: 52W Case: PQFN8 On-state resistance: 1mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FDMS4D5N08LC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 80V; 116A; 113.6W; PQFN8 Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 80V Drain current: 116A Power dissipation: 113.6W Case: PQFN8 Gate-source voltage: 20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 71nC Kind of channel: enhancement Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FDMT1D3N08B | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 103A; Idm: 864A; 178W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 103A Pulsed drain current: 864A Power dissipation: 178W Case: PQFN8 On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 260nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTMFSC012N15MC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 80A; Idm: 1067A; 58W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 80A Pulsed drain current: 1067A Power dissipation: 58W Case: PQFN8 On-state resistance: 11.4mΩ Mounting: SMD Gate charge: 32.4nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FDMC3020DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 100A; 50W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 100A Power dissipation: 50W Case: PQFN8 On-state resistance: 9.1mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FDMC4D9P20X8 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -47A; Idm: -335A; 40W; PQFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -47A Pulsed drain current: -335A Power dissipation: 40W Case: PQFN8 On-state resistance: 16.4mΩ Mounting: SMD Gate charge: 109nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±12V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FDMC7570S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 40A; Idm: 120A; 59W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 40A Pulsed drain current: 120A Power dissipation: 59W Case: PQFN8 On-state resistance: 2.9mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NCS20074DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC Kind of package: reel; tape Mounting: SMT Type of integrated circuit: operational amplifier Number of channels: quad; 4 Integrated circuit features: rail-to-rail output Case: SO14 Operating temperature: -40...125°C Input offset current: 75pA Input bias current: 1.5nA Input offset voltage: 3mV Voltage supply range: ± 1.35...18V DC; 2.7...36V DC Slew rate: 2.4V/μs Bandwidth: 3MHz |
auf Bestellung 2475 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCV20074DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC Kind of package: reel; tape Mounting: SMT Type of integrated circuit: operational amplifier Number of channels: quad; 4 Integrated circuit features: rail-to-rail output Case: TSSOP14 Operating temperature: -40...125°C Input offset current: 75pA Input bias current: 1.5nA Input offset voltage: 3mV Voltage supply range: ± 1.35...18V DC; 2.7...36V DC Slew rate: 2.4V/μs Bandwidth: 3MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCS20074DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC Kind of package: reel; tape Mounting: SMT Type of integrated circuit: operational amplifier Number of channels: quad; 4 Integrated circuit features: rail-to-rail output Case: TSSOP14 Operating temperature: -40...125°C Input offset current: 75pA Input bias current: 1.5nA Input offset voltage: 3mV Voltage supply range: ± 1.35...18V DC; 2.7...36V DC Slew rate: 2.4V/μs Bandwidth: 3MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCV20074DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC Kind of package: reel; tape Mounting: SMT Type of integrated circuit: operational amplifier Number of channels: quad; 4 Integrated circuit features: rail-to-rail output Case: SO14 Operating temperature: -40...125°C Input offset current: 75pA Input bias current: 1.5nA Input offset voltage: 3mV Voltage supply range: ± 1.35...18V DC; 2.7...36V DC Slew rate: 2.4V/μs Bandwidth: 3MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MBRS410LT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 10V; 4A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 10V Load current: 4A Semiconductor structure: single diode Case: SMC Max. forward voltage: 0.225V Kind of package: reel; tape |
auf Bestellung 1067 Stücke: Lieferzeit 14-21 Tag (e) |
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FDLL300A | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 125V; 0.5A; SOD80; Ufmax: 1V; Ifsm: 4A; 500mW Type of diode: switching Case: SOD80 Mounting: SMD Max. off-state voltage: 125V Load current: 0.5A Semiconductor structure: single diode Capacitance: 6pF Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Power dissipation: 0.5W Max. load current: 0.6A |
auf Bestellung 1221 Stücke: Lieferzeit 14-21 Tag (e) |
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FNB41560 | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26 Mounting: THT Frequency: 20kHz Number of channels: 6 Power dissipation: 34W Operating voltage: 13.5...16.5/0...400V DC Kind of integrated circuit: 3-phase motor controller; IPM Collector-emitter voltage: 600V Technology: Motion SPM® 45 Case: SPMAA-A26 Type of integrated circuit: driver Topology: IGBT three-phase bridge; NTC thermistor Operating temperature: -40...125°C Output current: 15A |
auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD4243 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -14A; 42W; DPAK Power dissipation: 42W Gate charge: 29nC Polarisation: unipolar Technology: PowerTrench® Drain current: -14A Kind of channel: enhancement Drain-source voltage: -40V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DPAK On-state resistance: 69mΩ Mounting: SMD |
auf Bestellung 2407 Stücke: Lieferzeit 14-21 Tag (e) |
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NCS20071SN2T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; Ch: 1; ±1.35÷18VDC,2.7÷36VDC Type of integrated circuit: operational amplifier Case: TSOP5 Mounting: SMT Operating temperature: -40...125°C Kind of package: reel; tape Input offset voltage: 4.5mV Voltage supply range: ± 1.35...18V DC; 2.7...36V DC Slew rate: 2.8V/μs Bandwidth: 3MHz Integrated circuit features: rail-to-rail output Number of channels: single; 1 |
auf Bestellung 2181 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTTFS002N04CLTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8 Case: WDFN8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 49nC On-state resistance: 2.2mΩ Gate-source voltage: ±20V Power dissipation: 27W Drain current: 142A Drain-source voltage: 40V Pulsed drain current: 706A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTTFS002N04CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 136A Pulsed drain current: 676A Power dissipation: 27W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NVTFS002N04CLTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8 Case: WDFN8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 49nC On-state resistance: 2.2mΩ Gate-source voltage: ±20V Power dissipation: 27W Drain current: 142A Drain-source voltage: 40V Pulsed drain current: 706A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NVTFS002N04CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 136A Pulsed drain current: 676A Power dissipation: 27W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NVTFWS002N04CLTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFNW8 Case: WDFNW8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 49nC On-state resistance: 2.2mΩ Gate-source voltage: ±20V Power dissipation: 27W Drain current: 142A Drain-source voltage: 40V Pulsed drain current: 706A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NVTFWS002N04CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 136A Pulsed drain current: 676A Power dissipation: 27W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCV6357MTWATXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; SMD; reel,tape; automotive industry Type of integrated circuit: PMIC Kind of package: reel; tape Mounting: SMD Application: automotive industry Kind of integrated circuit: DC/DC converter |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP383LMUAJAATXG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.5÷2.8A; Ch: 2; N-Channel; SMD; uDFN10 Mounting: SMD Supply voltage: 2.7...5.5V DC Active logical level: low Control voltage: 0...5.5V DC Output current: 0.5...2.8A Type of integrated circuit: power switch Kind of output: N-Channel Kind of package: reel; tape Case: uDFN10 Kind of integrated circuit: high-side Number of channels: 2 On-state resistance: 95mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MMBZ5250BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 20V; SMD; SOT23; reel,tape; single diode Case: SOT23 Mounting: SMD Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.3W Tolerance: ±5% Zener voltage: 20V Manufacturer series: MMBZ52xxBLT1G Kind of package: reel; tape |
auf Bestellung 5900 Stücke: Lieferzeit 14-21 Tag (e) |
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FQD13N10TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.3A Power dissipation: 40W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement Technology: QFET® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NSR0320MW2T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD323; SMD; 23V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD323 Mounting: SMD Max. off-state voltage: 23V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape |
auf Bestellung 15144 Stücke: Lieferzeit 14-21 Tag (e) |
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2N4922G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO225 Kind of package: bulk Mounting: THT Type of transistor: NPN Case: TO225 Collector current: 1A Power dissipation: 30W Current gain: 30...150 Frequency: 3MHz Collector-emitter voltage: 60V Polarisation: bipolar |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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MBR2545CTG | ONSEMI |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220-3; Ufmax: 0.72V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220-3 Max. forward voltage: 0.72V Kind of package: tube Max. forward impulse current: 150A Heatsink thickness: 1.15...1.39mm Max. load current: 30A |
auf Bestellung 219 Stücke: Lieferzeit 14-21 Tag (e) |
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HCPL2611 | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 10Mbps; DIP8 Case: DIP8 Kind of output: Schmitt trigger Type of optocoupler: optocoupler Mounting: THT Turn-off time: 12ns Turn-on time: 50ns Number of channels: 1 Slew rate: 2.5kV/μs Transfer rate: 10Mbps |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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HCPL2611M | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 5kV; 10Mbps; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: logic Case: DIP8 Max. off-state voltage: 5V Manufacturer series: HCPL2611M Slew rate: 15kV/μs Transfer rate: 10Mbps Insulation voltage: 5kV Turn-on time: 30ns Output voltage: -500mV...7V Turn-off time: 30ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MC74AC374DWG | ONSEMI |
Category: Flip-Flops Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20 Type of integrated circuit: digital Kind of integrated circuit: 3-state; D flip-flop; octal Case: SOIC20 Number of channels: 8 Mounting: SMD Operating temperature: -40...85°C Technology: CMOS Kind of package: tube Family: AC Supply voltage: 2...6V DC Manufacturer series: AC Kind of output: 3-state |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MC74AC374DWR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20 Type of integrated circuit: digital Kind of integrated circuit: 3-state; D flip-flop; octal Case: SOIC20 Number of channels: 8 Mounting: SMD Operating temperature: -40...85°C Technology: CMOS Kind of package: reel; tape Family: AC Supply voltage: 2...6V DC Manufacturer series: AC Kind of output: 3-state |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NXH600N65L4Q2F2SG | ONSEMI |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 600A; PIM41; SiC Technology: SiC Gate-emitter voltage: ±20V Collector current: 600A Topology: NTC thermistor; three-level inverter; single-phase Max. off-state voltage: 650V Semiconductor structure: diode/transistor Application: for UPS; Inverter Type of semiconductor module: IGBT Case: PIM41 Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 36 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NXH160T120L2Q2F2S1G | ONSEMI |
Category: IGBT modules Description: Module: IGBT; diode/transistor; 3-level inverter SPLIT-TNPC Gate-emitter voltage: ±20V Collector current: 181A Pulsed collector current: 543A Topology: 3-level inverter SPLIT-TNPC Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Type of semiconductor module: IGBT Case: PIM56 Electrical mounting: Press-in PCB Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NXH200T120H3Q2F2STNG | ONSEMI |
Category: IGBT modules Description: Module: IGBT; Ic: 330A; PIM Case: PIM Collector current: 330A Type of semiconductor module: IGBT |
auf Bestellung 396 Stücke: Lieferzeit 14-21 Tag (e) |
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| NXH200T120H3Q2F2SG | ONSEMI |
Category: IGBT modules Description: Module: IGBT; Ic: 330A; PIM Case: PIM Collector current: 330A Type of semiconductor module: IGBT |
auf Bestellung 192 Stücke: Lieferzeit 14-21 Tag (e) |
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| NXH450B100H4Q2F2SG | ONSEMI |
Category: IGBT modules Description: Module: IGBT; Ic: 101A; PIM Gate-emitter voltage: ±20V Collector current: 101A Type of semiconductor module: IGBT Case: PIM |
auf Bestellung 216 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTMFS0D6N03CT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 433A; Idm: 900A; 200W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 433A Pulsed drain current: 900A Power dissipation: 200W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 620µΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
MUN5112DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 22kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
auf Bestellung 2279 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCP1203P60G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; SMPS; tube Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.25A Mounting: THT Case: DIP8 Topology: flyback Number of channels: 1 Operating temperature: 0...125°C Operating voltage: 7.8...16V DC Kind of package: tube Application: SMPS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FSDM0465REWDTU | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 1.4A; 650V; 66kHz; Ch: 1 Mounting: THT Operating temperature: -25...85°C Case: TO220F-6L Frequency: 66kHz Number of channels: 1 Output current: 1.4A On-state resistance: 2.6Ω Operating voltage: 8...19V DC Power: 48W Duty cycle factor: 77...87% Kind of integrated circuit: AC/DC switcher; PWM controller Output voltage: 650V Input voltage: 85...265V Topology: flyback Application: SMPS Type of integrated circuit: PMIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NDP6060 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 48A; Idm: 144A; 100W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 48A Power dissipation: 100W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 25µΩ Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 144A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
MUN5233T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Current gain: 200 |
auf Bestellung 19924 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTMFS4C302NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 230A; Idm: 900A; 96W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 230A Pulsed drain current: 900A Power dissipation: 96W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 1.15mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
MJW18020G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 450V; 30A; 250W; TO247-3 Frequency: 13MHz Mounting: THT Collector-emitter voltage: 450V Power dissipation: 250W Polarisation: bipolar Type of transistor: NPN Current gain: 14...34 Kind of package: tube Case: TO247-3 Collector current: 30A |
auf Bestellung 66 Stücke: Lieferzeit 14-21 Tag (e) |
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 |
MJF18004G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 450V; 5A; 35W; TO220FP Frequency: 13MHz Mounting: THT Collector-emitter voltage: 450V Power dissipation: 35W Polarisation: bipolar Type of transistor: NPN Current gain: 14...34 Kind of package: tube Case: TO220FP Collector current: 5A |
auf Bestellung 77 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCS20092DMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 350kHz; Ch: 2; 1.8÷5.5VDC; Micro8; 4mV Operating temperature: -40...125°C Case: Micro8 Type of integrated circuit: operational amplifier Input offset current: 1pA Input bias current: 1pA Input offset voltage: 4mV Slew rate: 0.15V/μs Voltage supply range: 1.8...5.5V DC Bandwidth: 350kHz Kind of package: reel; tape Number of channels: dual; 2 Mounting: SMT Integrated circuit features: low power; rail-to-rail |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCS20092DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 350kHz; Ch: 2; 1.8÷5.5VDC; SO8; 4mV Operating temperature: -40...125°C Case: SO8 Type of integrated circuit: operational amplifier Input offset current: 1pA Input bias current: 1pA Input offset voltage: 4mV Slew rate: 0.15V/μs Voltage supply range: 1.8...5.5V DC Bandwidth: 350kHz Kind of package: reel; tape Number of channels: dual; 2 Mounting: SMT Integrated circuit features: low power; rail-to-rail |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCS20092DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 350kHz; Ch: 2; 1.8÷5.5VDC; TSSOP8; 4mV Operating temperature: -40...125°C Case: TSSOP8 Type of integrated circuit: operational amplifier Input offset current: 1pA Input bias current: 1pA Input offset voltage: 4mV Slew rate: 0.15V/μs Voltage supply range: 1.8...5.5V DC Bandwidth: 350kHz Kind of package: reel; tape Number of channels: dual; 2 Mounting: SMT Integrated circuit features: low power; rail-to-rail |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NCV8154MW330330TBG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Case: DFN10
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Case: DFN10
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN7527BMX |
|
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; SOIC8
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -25...125°C
Case: SOIC8
Category: Drivers - integrated circuits
Description: IC: PMIC; SOIC8
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -25...125°C
Case: SOIC8
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.32 EUR |
| ES1B |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Semiconductor structure: single diode
Max. forward voltage: 0.92V
Load current: 1A
Type of diode: rectifying
Power dissipation: 1.47W
Features of semiconductor devices: fast switching
Case: SMA
Max. forward impulse current: 30A
Max. off-state voltage: 0.1kV
Capacitance: 7pF
Kind of package: reel; tape
Reverse recovery time: 15ns
Leakage current: 0.1mA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Semiconductor structure: single diode
Max. forward voltage: 0.92V
Load current: 1A
Type of diode: rectifying
Power dissipation: 1.47W
Features of semiconductor devices: fast switching
Case: SMA
Max. forward impulse current: 30A
Max. off-state voltage: 0.1kV
Capacitance: 7pF
Kind of package: reel; tape
Reverse recovery time: 15ns
Leakage current: 0.1mA
auf Bestellung 1365 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 162+ | 0.52 EUR |
| 200+ | 0.43 EUR |
| 236+ | 0.36 EUR |
| 365+ | 0.24 EUR |
| 435+ | 0.19 EUR |
| 538+ | 0.15 EUR |
| 603+ | 0.14 EUR |
| ES1C |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Capacitance: 7pF
Power dissipation: 1.47W
Max. forward impulse current: 30A
Max. off-state voltage: 150V
Kind of package: reel; tape
Case: SMA
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 15ns
Leakage current: 0.1mA
Max. forward voltage: 0.92V
Load current: 1A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Capacitance: 7pF
Power dissipation: 1.47W
Max. forward impulse current: 30A
Max. off-state voltage: 150V
Kind of package: reel; tape
Case: SMA
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 15ns
Leakage current: 0.1mA
Max. forward voltage: 0.92V
Load current: 1A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJE253G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 4A; 15W; TO225
Case: TO225
Mounting: THT
Collector-emitter voltage: 100V
Power dissipation: 15W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 40...180
Kind of package: bulk
Frequency: 40MHz
Collector current: 4A
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 4A; 15W; TO225
Case: TO225
Mounting: THT
Collector-emitter voltage: 100V
Power dissipation: 15W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 40...180
Kind of package: bulk
Frequency: 40MHz
Collector current: 4A
auf Bestellung 330 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 60+ | 1.43 EUR |
| 96+ | 0.89 EUR |
| 127+ | 0.67 EUR |
| 143+ | 0.6 EUR |
| 250+ | 0.54 EUR |
| MJE243G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 15W; TO225
Case: TO225
Mounting: THT
Collector-emitter voltage: 100V
Power dissipation: 15W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 40...180
Kind of package: bulk
Frequency: 40MHz
Collector current: 4A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 15W; TO225
Case: TO225
Mounting: THT
Collector-emitter voltage: 100V
Power dissipation: 15W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 40...180
Kind of package: bulk
Frequency: 40MHz
Collector current: 4A
auf Bestellung 881 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 60+ | 1.43 EUR |
| 94+ | 0.92 EUR |
| 125+ | 0.69 EUR |
| 140+ | 0.61 EUR |
| 200+ | 0.55 EUR |
| 500+ | 0.51 EUR |
| FDMS86350ET80 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 140A; 187W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 140A
Power dissipation: 187W
Case: PQFN8
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 140A; 187W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 140A
Power dissipation: 187W
Case: PQFN8
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86150 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 187W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 187W
Case: PQFN8
On-state resistance: 9.1mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 187W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 187W
Case: PQFN8
On-state resistance: 9.1mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC86324 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 20A
Power dissipation: 41W
Case: PQFN8
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 20A
Power dissipation: 41W
Case: PQFN8
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS0306AS |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 59W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 59W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTTFS1D2N02P1E |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 180A; Idm: 195A; 52W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 180A
Pulsed drain current: 195A
Power dissipation: 52W
Case: PQFN8
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 180A; Idm: 195A; 52W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 180A
Pulsed drain current: 195A
Power dissipation: 52W
Case: PQFN8
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS4D5N08LC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 80V; 116A; 113.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 80V
Drain current: 116A
Power dissipation: 113.6W
Case: PQFN8
Gate-source voltage: 20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 71nC
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 80V; 116A; 113.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 80V
Drain current: 116A
Power dissipation: 113.6W
Case: PQFN8
Gate-source voltage: 20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 71nC
Kind of channel: enhancement
Technology: PowerTrench®
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMT1D3N08B |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 103A; Idm: 864A; 178W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 103A
Pulsed drain current: 864A
Power dissipation: 178W
Case: PQFN8
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 103A; Idm: 864A; 178W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 103A
Pulsed drain current: 864A
Power dissipation: 178W
Case: PQFN8
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFSC012N15MC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 80A; Idm: 1067A; 58W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 80A
Pulsed drain current: 1067A
Power dissipation: 58W
Case: PQFN8
On-state resistance: 11.4mΩ
Mounting: SMD
Gate charge: 32.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 80A; Idm: 1067A; 58W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 80A
Pulsed drain current: 1067A
Power dissipation: 58W
Case: PQFN8
On-state resistance: 11.4mΩ
Mounting: SMD
Gate charge: 32.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMC3020DC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 100A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 50W
Case: PQFN8
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 100A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 50W
Case: PQFN8
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC4D9P20X8 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -47A; Idm: -335A; 40W; PQFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -47A
Pulsed drain current: -335A
Power dissipation: 40W
Case: PQFN8
On-state resistance: 16.4mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -47A; Idm: -335A; 40W; PQFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -47A
Pulsed drain current: -335A
Power dissipation: 40W
Case: PQFN8
On-state resistance: 16.4mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC7570S |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; Idm: 120A; 59W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Pulsed drain current: 120A
Power dissipation: 59W
Case: PQFN8
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; Idm: 120A; 59W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Pulsed drain current: 120A
Power dissipation: 59W
Case: PQFN8
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCS20074DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Integrated circuit features: rail-to-rail output
Case: SO14
Operating temperature: -40...125°C
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Integrated circuit features: rail-to-rail output
Case: SO14
Operating temperature: -40...125°C
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
auf Bestellung 2475 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 103+ | 0.83 EUR |
| 140+ | 0.61 EUR |
| 158+ | 0.54 EUR |
| 172+ | 0.5 EUR |
| 186+ | 0.45 EUR |
| NCV20074DTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Integrated circuit features: rail-to-rail output
Case: TSSOP14
Operating temperature: -40...125°C
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Integrated circuit features: rail-to-rail output
Case: TSSOP14
Operating temperature: -40...125°C
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCS20074DTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Integrated circuit features: rail-to-rail output
Case: TSSOP14
Operating temperature: -40...125°C
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Integrated circuit features: rail-to-rail output
Case: TSSOP14
Operating temperature: -40...125°C
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCV20074DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Integrated circuit features: rail-to-rail output
Case: SO14
Operating temperature: -40...125°C
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Integrated circuit features: rail-to-rail output
Case: SO14
Operating temperature: -40...125°C
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBRS410LT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 10V; 4A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 10V
Load current: 4A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 0.225V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 10V; 4A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 10V
Load current: 4A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 0.225V
Kind of package: reel; tape
auf Bestellung 1067 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 49+ | 1.75 EUR |
| 54+ | 1.59 EUR |
| FDLL300A |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 125V; 0.5A; SOD80; Ufmax: 1V; Ifsm: 4A; 500mW
Type of diode: switching
Case: SOD80
Mounting: SMD
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 6pF
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Power dissipation: 0.5W
Max. load current: 0.6A
Category: SMD universal diodes
Description: Diode: switching; SMD; 125V; 0.5A; SOD80; Ufmax: 1V; Ifsm: 4A; 500mW
Type of diode: switching
Case: SOD80
Mounting: SMD
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 6pF
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Power dissipation: 0.5W
Max. load current: 0.6A
auf Bestellung 1221 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 625+ | 0.13 EUR |
| 772+ | 0.11 EUR |
| 839+ | 0.1 EUR |
| 1055+ | 0.081 EUR |
| 1185+ | 0.071 EUR |
| FNB41560 |
|
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Mounting: THT
Frequency: 20kHz
Number of channels: 6
Power dissipation: 34W
Operating voltage: 13.5...16.5/0...400V DC
Kind of integrated circuit: 3-phase motor controller; IPM
Collector-emitter voltage: 600V
Technology: Motion SPM® 45
Case: SPMAA-A26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Operating temperature: -40...125°C
Output current: 15A
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Mounting: THT
Frequency: 20kHz
Number of channels: 6
Power dissipation: 34W
Operating voltage: 13.5...16.5/0...400V DC
Kind of integrated circuit: 3-phase motor controller; IPM
Collector-emitter voltage: 600V
Technology: Motion SPM® 45
Case: SPMAA-A26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Operating temperature: -40...125°C
Output current: 15A
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 21.44 EUR |
| 12+ | 19.15 EUR |
| 24+ | 16.49 EUR |
| FDD4243 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -14A; 42W; DPAK
Power dissipation: 42W
Gate charge: 29nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -14A
Kind of channel: enhancement
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 69mΩ
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -14A; 42W; DPAK
Power dissipation: 42W
Gate charge: 29nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -14A
Kind of channel: enhancement
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 69mΩ
Mounting: SMD
auf Bestellung 2407 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 54+ | 1.59 EUR |
| 75+ | 1.14 EUR |
| 90+ | 0.95 EUR |
| 133+ | 0.64 EUR |
| 138+ | 0.62 EUR |
| NCS20071SN2T1G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Case: TSOP5
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset voltage: 4.5mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.8V/μs
Bandwidth: 3MHz
Integrated circuit features: rail-to-rail output
Number of channels: single; 1
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Case: TSOP5
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset voltage: 4.5mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.8V/μs
Bandwidth: 3MHz
Integrated circuit features: rail-to-rail output
Number of channels: single; 1
auf Bestellung 2181 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 117+ | 0.73 EUR |
| 159+ | 0.54 EUR |
| 170+ | 0.5 EUR |
| NTTFS002N04CLTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Case: WDFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 2.2mΩ
Gate-source voltage: ±20V
Power dissipation: 27W
Drain current: 142A
Drain-source voltage: 40V
Pulsed drain current: 706A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Case: WDFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 2.2mΩ
Gate-source voltage: ±20V
Power dissipation: 27W
Drain current: 142A
Drain-source voltage: 40V
Pulsed drain current: 706A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTTFS002N04CTAG |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS002N04CLTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Case: WDFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 2.2mΩ
Gate-source voltage: ±20V
Power dissipation: 27W
Drain current: 142A
Drain-source voltage: 40V
Pulsed drain current: 706A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Case: WDFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 2.2mΩ
Gate-source voltage: ±20V
Power dissipation: 27W
Drain current: 142A
Drain-source voltage: 40V
Pulsed drain current: 706A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS002N04CTAG |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFWS002N04CLTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFNW8
Case: WDFNW8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 2.2mΩ
Gate-source voltage: ±20V
Power dissipation: 27W
Drain current: 142A
Drain-source voltage: 40V
Pulsed drain current: 706A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFNW8
Case: WDFNW8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 2.2mΩ
Gate-source voltage: ±20V
Power dissipation: 27W
Drain current: 142A
Drain-source voltage: 40V
Pulsed drain current: 706A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFWS002N04CTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV6357MTWATXG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape; automotive industry
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
Application: automotive industry
Kind of integrated circuit: DC/DC converter
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape; automotive industry
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
Application: automotive industry
Kind of integrated circuit: DC/DC converter
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP383LMUAJAATXG |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.8A; Ch: 2; N-Channel; SMD; uDFN10
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
Output current: 0.5...2.8A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: uDFN10
Kind of integrated circuit: high-side
Number of channels: 2
On-state resistance: 95mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.8A; Ch: 2; N-Channel; SMD; uDFN10
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
Output current: 0.5...2.8A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: uDFN10
Kind of integrated circuit: high-side
Number of channels: 2
On-state resistance: 95mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBZ5250BLT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; SOT23; reel,tape; single diode
Case: SOT23
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 20V
Manufacturer series: MMBZ52xxBLT1G
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; SOT23; reel,tape; single diode
Case: SOT23
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 20V
Manufacturer series: MMBZ52xxBLT1G
Kind of package: reel; tape
auf Bestellung 5900 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 715+ | 0.12 EUR |
| 1064+ | 0.08 EUR |
| 1613+ | 0.052 EUR |
| 1946+ | 0.044 EUR |
| 2977+ | 0.029 EUR |
| 3312+ | 0.026 EUR |
| FQD13N10TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: QFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: QFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NSR0320MW2T1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 23V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 23V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 23V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 23V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
auf Bestellung 15144 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 278+ | 0.31 EUR |
| 338+ | 0.25 EUR |
| 388+ | 0.21 EUR |
| 571+ | 0.15 EUR |
| 682+ | 0.12 EUR |
| 851+ | 0.1 EUR |
| 999+ | 0.086 EUR |
| 1155+ | 0.074 EUR |
| 3000+ | 0.06 EUR |
| 2N4922G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO225
Kind of package: bulk
Mounting: THT
Type of transistor: NPN
Case: TO225
Collector current: 1A
Power dissipation: 30W
Current gain: 30...150
Frequency: 3MHz
Collector-emitter voltage: 60V
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO225
Kind of package: bulk
Mounting: THT
Type of transistor: NPN
Case: TO225
Collector current: 1A
Power dissipation: 30W
Current gain: 30...150
Frequency: 3MHz
Collector-emitter voltage: 60V
Polarisation: bipolar
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 55+ | 1.57 EUR |
| 70+ | 1.21 EUR |
| MBR2545CTG |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220-3; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.72V
Kind of package: tube
Max. forward impulse current: 150A
Heatsink thickness: 1.15...1.39mm
Max. load current: 30A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220-3; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.72V
Kind of package: tube
Max. forward impulse current: 150A
Heatsink thickness: 1.15...1.39mm
Max. load current: 30A
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 3.36 EUR |
| 35+ | 2.45 EUR |
| 42+ | 2.05 EUR |
| 50+ | 1.94 EUR |
| HCPL2611 |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 10Mbps; DIP8
Case: DIP8
Kind of output: Schmitt trigger
Type of optocoupler: optocoupler
Mounting: THT
Turn-off time: 12ns
Turn-on time: 50ns
Number of channels: 1
Slew rate: 2.5kV/μs
Transfer rate: 10Mbps
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 10Mbps; DIP8
Case: DIP8
Kind of output: Schmitt trigger
Type of optocoupler: optocoupler
Mounting: THT
Turn-off time: 12ns
Turn-on time: 50ns
Number of channels: 1
Slew rate: 2.5kV/μs
Transfer rate: 10Mbps
Produkt ist nicht verfügbar
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| HCPL2611M |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 5kV; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: logic
Case: DIP8
Max. off-state voltage: 5V
Manufacturer series: HCPL2611M
Slew rate: 15kV/μs
Transfer rate: 10Mbps
Insulation voltage: 5kV
Turn-on time: 30ns
Output voltage: -500mV...7V
Turn-off time: 30ns
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 5kV; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: logic
Case: DIP8
Max. off-state voltage: 5V
Manufacturer series: HCPL2611M
Slew rate: 15kV/μs
Transfer rate: 10Mbps
Insulation voltage: 5kV
Turn-on time: 30ns
Output voltage: -500mV...7V
Turn-off time: 30ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74AC374DWG |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Case: SOIC20
Number of channels: 8
Mounting: SMD
Operating temperature: -40...85°C
Technology: CMOS
Kind of package: tube
Family: AC
Supply voltage: 2...6V DC
Manufacturer series: AC
Kind of output: 3-state
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Case: SOIC20
Number of channels: 8
Mounting: SMD
Operating temperature: -40...85°C
Technology: CMOS
Kind of package: tube
Family: AC
Supply voltage: 2...6V DC
Manufacturer series: AC
Kind of output: 3-state
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74AC374DWR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Case: SOIC20
Number of channels: 8
Mounting: SMD
Operating temperature: -40...85°C
Technology: CMOS
Kind of package: reel; tape
Family: AC
Supply voltage: 2...6V DC
Manufacturer series: AC
Kind of output: 3-state
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Case: SOIC20
Number of channels: 8
Mounting: SMD
Operating temperature: -40...85°C
Technology: CMOS
Kind of package: reel; tape
Family: AC
Supply voltage: 2...6V DC
Manufacturer series: AC
Kind of output: 3-state
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
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| NXH600N65L4Q2F2SG |
|
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 600A; PIM41; SiC
Technology: SiC
Gate-emitter voltage: ±20V
Collector current: 600A
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Application: for UPS; Inverter
Type of semiconductor module: IGBT
Case: PIM41
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 600A; PIM41; SiC
Technology: SiC
Gate-emitter voltage: ±20V
Collector current: 600A
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Application: for UPS; Inverter
Type of semiconductor module: IGBT
Case: PIM41
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 36 Stücke
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| NXH160T120L2Q2F2S1G |
|
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; diode/transistor; 3-level inverter SPLIT-TNPC
Gate-emitter voltage: ±20V
Collector current: 181A
Pulsed collector current: 543A
Topology: 3-level inverter SPLIT-TNPC
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Case: PIM56
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; 3-level inverter SPLIT-TNPC
Gate-emitter voltage: ±20V
Collector current: 181A
Pulsed collector current: 543A
Topology: 3-level inverter SPLIT-TNPC
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Case: PIM56
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 12 Stücke
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| NXH200T120H3Q2F2STNG |
|
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; Ic: 330A; PIM
Case: PIM
Collector current: 330A
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; Ic: 330A; PIM
Case: PIM
Collector current: 330A
Type of semiconductor module: IGBT
auf Bestellung 396 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 214.13 EUR |
| NXH200T120H3Q2F2SG |
|
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; Ic: 330A; PIM
Case: PIM
Collector current: 330A
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; Ic: 330A; PIM
Case: PIM
Collector current: 330A
Type of semiconductor module: IGBT
auf Bestellung 192 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 214.13 EUR |
| NXH450B100H4Q2F2SG |
|
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; Ic: 101A; PIM
Gate-emitter voltage: ±20V
Collector current: 101A
Type of semiconductor module: IGBT
Case: PIM
Category: IGBT modules
Description: Module: IGBT; Ic: 101A; PIM
Gate-emitter voltage: ±20V
Collector current: 101A
Type of semiconductor module: IGBT
Case: PIM
auf Bestellung 216 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 243.12 EUR |
| NTMFS0D6N03CT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 433A; Idm: 900A; 200W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 433A
Pulsed drain current: 900A
Power dissipation: 200W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 620µΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 433A; Idm: 900A; 200W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 433A
Pulsed drain current: 900A
Power dissipation: 200W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 620µΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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Stück im Wert von UAH
| MUN5112DW1T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 22kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 22kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 2279 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 625+ | 0.13 EUR |
| 1087+ | 0.079 EUR |
| 1743+ | 0.049 EUR |
| 2279+ | 0.037 EUR |
| NCP1203P60G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; SMPS; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Mounting: THT
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: 0...125°C
Operating voltage: 7.8...16V DC
Kind of package: tube
Application: SMPS
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; SMPS; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Mounting: THT
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: 0...125°C
Operating voltage: 7.8...16V DC
Kind of package: tube
Application: SMPS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSDM0465REWDTU |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1.4A; 650V; 66kHz; Ch: 1
Mounting: THT
Operating temperature: -25...85°C
Case: TO220F-6L
Frequency: 66kHz
Number of channels: 1
Output current: 1.4A
On-state resistance: 2.6Ω
Operating voltage: 8...19V DC
Power: 48W
Duty cycle factor: 77...87%
Kind of integrated circuit: AC/DC switcher; PWM controller
Output voltage: 650V
Input voltage: 85...265V
Topology: flyback
Application: SMPS
Type of integrated circuit: PMIC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1.4A; 650V; 66kHz; Ch: 1
Mounting: THT
Operating temperature: -25...85°C
Case: TO220F-6L
Frequency: 66kHz
Number of channels: 1
Output current: 1.4A
On-state resistance: 2.6Ω
Operating voltage: 8...19V DC
Power: 48W
Duty cycle factor: 77...87%
Kind of integrated circuit: AC/DC switcher; PWM controller
Output voltage: 650V
Input voltage: 85...265V
Topology: flyback
Application: SMPS
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NDP6060 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; Idm: 144A; 100W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 25µΩ
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 144A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; Idm: 144A; 100W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 25µΩ
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 144A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| MUN5233T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 200
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 200
auf Bestellung 19924 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 455+ | 0.19 EUR |
| 589+ | 0.14 EUR |
| 872+ | 0.098 EUR |
| 1042+ | 0.082 EUR |
| 1306+ | 0.065 EUR |
| 1534+ | 0.056 EUR |
| 1786+ | 0.048 EUR |
| 1938+ | 0.044 EUR |
| 3000+ | 0.038 EUR |
| NTMFS4C302NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 230A; Idm: 900A; 96W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 230A
Pulsed drain current: 900A
Power dissipation: 96W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 230A; Idm: 900A; 96W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 230A
Pulsed drain current: 900A
Power dissipation: 96W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MJW18020G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 30A; 250W; TO247-3
Frequency: 13MHz
Mounting: THT
Collector-emitter voltage: 450V
Power dissipation: 250W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 14...34
Kind of package: tube
Case: TO247-3
Collector current: 30A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 30A; 250W; TO247-3
Frequency: 13MHz
Mounting: THT
Collector-emitter voltage: 450V
Power dissipation: 250W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 14...34
Kind of package: tube
Case: TO247-3
Collector current: 30A
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 9.69 EUR |
| 10+ | 8.66 EUR |
| 11+ | 8.03 EUR |
| 12+ | 7.59 EUR |
| MJF18004G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 35W; TO220FP
Frequency: 13MHz
Mounting: THT
Collector-emitter voltage: 450V
Power dissipation: 35W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 14...34
Kind of package: tube
Case: TO220FP
Collector current: 5A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 35W; TO220FP
Frequency: 13MHz
Mounting: THT
Collector-emitter voltage: 450V
Power dissipation: 35W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 14...34
Kind of package: tube
Case: TO220FP
Collector current: 5A
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 3.15 EUR |
| 46+ | 1.87 EUR |
| 51+ | 1.69 EUR |
| NCS20092DMR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 2; 1.8÷5.5VDC; Micro8; 4mV
Operating temperature: -40...125°C
Case: Micro8
Type of integrated circuit: operational amplifier
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
Kind of package: reel; tape
Number of channels: dual; 2
Mounting: SMT
Integrated circuit features: low power; rail-to-rail
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 2; 1.8÷5.5VDC; Micro8; 4mV
Operating temperature: -40...125°C
Case: Micro8
Type of integrated circuit: operational amplifier
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
Kind of package: reel; tape
Number of channels: dual; 2
Mounting: SMT
Integrated circuit features: low power; rail-to-rail
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCS20092DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 2; 1.8÷5.5VDC; SO8; 4mV
Operating temperature: -40...125°C
Case: SO8
Type of integrated circuit: operational amplifier
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
Kind of package: reel; tape
Number of channels: dual; 2
Mounting: SMT
Integrated circuit features: low power; rail-to-rail
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 2; 1.8÷5.5VDC; SO8; 4mV
Operating temperature: -40...125°C
Case: SO8
Type of integrated circuit: operational amplifier
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
Kind of package: reel; tape
Number of channels: dual; 2
Mounting: SMT
Integrated circuit features: low power; rail-to-rail
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCS20092DTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 2; 1.8÷5.5VDC; TSSOP8; 4mV
Operating temperature: -40...125°C
Case: TSSOP8
Type of integrated circuit: operational amplifier
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
Kind of package: reel; tape
Number of channels: dual; 2
Mounting: SMT
Integrated circuit features: low power; rail-to-rail
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 2; 1.8÷5.5VDC; TSSOP8; 4mV
Operating temperature: -40...125°C
Case: TSSOP8
Type of integrated circuit: operational amplifier
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
Kind of package: reel; tape
Number of channels: dual; 2
Mounting: SMT
Integrated circuit features: low power; rail-to-rail
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH