FGH40N60SFDTU onsemi
Hersteller: onsemi
Description: IGBT FIELD STOP 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 25ns/115ns
Switching Energy: 1.13mJ (on), 310µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
Description: IGBT FIELD STOP 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 25ns/115ns
Switching Energy: 1.13mJ (on), 310µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
auf Bestellung 289 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 13.03 EUR |
30+ | 10.33 EUR |
120+ | 8.86 EUR |
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Technische Details FGH40N60SFDTU onsemi
Description: IGBT FIELD STOP 600V 80A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 45 ns, Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Field Stop, Td (on/off) @ 25°C: 25ns/115ns, Switching Energy: 1.13mJ (on), 310µJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 120 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 290 W.
Weitere Produktangebote FGH40N60SFDTU nach Preis ab 6.4 EUR bis 13.1 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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FGH40N60SFDTU | Hersteller : onsemi / Fairchild | IGBT Transistors 600V 40A Field Stop |
auf Bestellung 2250 Stücke: Lieferzeit 259-273 Tag (e) |
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FGH40N60SFDTU | Hersteller : ON-Semicoductor |
IGBT 600V 80A 290W FGH40N60SFDTU TFGH40N60sfdtu Anzahl je Verpackung: 2 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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FGH40N60SFDTU Produktcode: 49007 |
Hersteller : IR |
Transistoren > Transistoren IGBT, Leistungsmodule Gehäuse: TO-247 Vces: 600 Vce: 2,3 Ic 25: 80 Ic 100: 40 Pd 25: 290 td(on)/td(off) 100-150 Grad: 25/115 |
Produkt ist nicht verfügbar
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FGH40N60SFDTU | Hersteller : ON Semiconductor | Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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FGH40N60SFDTU | Hersteller : ON Semiconductor | Trans IGBT Chip N-CH 600V 80A 290W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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FGH40N60SFDTU | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3 Mounting: THT Power dissipation: 116W Features of semiconductor devices: integrated anti-parallel diode Case: TO247-3 Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 120A Type of transistor: IGBT Gate charge: 0.12µC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FGH40N60SFDTU | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3 Mounting: THT Power dissipation: 116W Features of semiconductor devices: integrated anti-parallel diode Case: TO247-3 Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 120A Type of transistor: IGBT Gate charge: 0.12µC |
Produkt ist nicht verfügbar |