| Foto | Bezeichnung | Hersteller | Beschreibung |
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| FDMC9430L-F085 | ONSEMI |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 40V; 12A; 11.4W; Power33 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 12A Power dissipation: 11.4W Case: Power33 Gate-source voltage: ±12V On-state resistance: 13mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| FDMC86262P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -2A; Idm: -35A; 40W; WDFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -150V Drain current: -2A Power dissipation: 40W Case: WDFN8 Gate-source voltage: ±25V On-state resistance: 307mΩ Mounting: SMD Gate charge: 9.1nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -35A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FDMC8327L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 14A; Idm: 60A; 30W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 14A Power dissipation: 30W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 60A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FDMC8097AC | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 150/-150V; 2.4/-0.9A; 1.9W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 150/-150V Drain current: 2.4/-0.9A Power dissipation: 1.9W Case: Power33 Gate-source voltage: ±20V; ±25V On-state resistance: 2171/306mΩ Mounting: SMD Gate charge: 4/6.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| FDMC86184 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 266A; 54W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 36A Power dissipation: 54W Case: Power33 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 266A Technology: PowerTrench® |
Produkt ist nicht verfügbar |
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| FDMC86160ET100 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 31A; Idm: 204A; 65W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 31A Power dissipation: 65W Case: Power33 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 204A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FDMC86340 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 48A; Idm: 200A; 54W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 48A Power dissipation: 54W Case: Power33 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 200A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FDMC2610 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 42W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 9.5A Power dissipation: 42W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 397mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FDMC6679AZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 41W; WDFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -20A Power dissipation: 41W Case: WDFN8 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FDMC6686P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -377A; 40W; Power33 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -56A Power dissipation: 40W Case: Power33 Gate-source voltage: ±8V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -377A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FDMC86261P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -9A; Idm: -20A; 40W; Power33 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -150V Drain current: -9A Power dissipation: 40W Case: Power33 Gate-source voltage: ±25V On-state resistance: 269mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -20A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FDMC7672 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 33W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Power dissipation: 33W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 50A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FDMC8360L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 240A; 54W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Power dissipation: 54W Case: Power33 Gate-source voltage: ±20V On-state resistance: 2.9mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 240A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FDMC86520L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 40W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 22A Power dissipation: 40W Case: Power33 Gate-source voltage: ±20V On-state resistance: 11.7mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 60A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FDMC7672S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 45A; 36W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 18A Power dissipation: 36W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 45A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FDMC8321L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 49A; Idm: 100A; 40W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 49A Power dissipation: 40W Case: Power33 Gate-source voltage: ±20V On-state resistance: 4.1mΩ Mounting: SMD Gate charge: 61nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 100A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FDMC8360LET40 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 658A; 75W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 75W Case: Power33 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 658A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FDMC86116LZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 15A; 19W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 7.5A Power dissipation: 19W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 178mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 15A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FDMC007N08LC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 330A; 57W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 42A Pulsed drain current: 330A Power dissipation: 57W Case: PQFN8 On-state resistance: 12.2mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FDMC007N08LCDC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 41A; Idm: 339A; 57W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 41A Pulsed drain current: 339A Power dissipation: 57W Case: PQFN8 On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NCP551SN33T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.15V Output voltage: 3.3V Output current: 0.15A Case: TSOP5 Mounting: SMD Manufacturer series: NCP551 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 4.3...12V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NCP1075BAP065G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC Operating temperature: -40...125°C Frequency: 59...71kHz Case: DIP8 Topology: flyback Type of integrated circuit: PMIC Mounting: SMD Output current: 0.4A Number of channels: 1 Operating voltage: 6.5...20V DC On-state resistance: 16.8Ω Kind of integrated circuit: AC/DC switcher; PWM controller |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NCP1075BAP130G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC Operating temperature: -40...125°C Frequency: 117...143kHz Case: DIP8 Topology: flyback Type of integrated circuit: PMIC Mounting: SMD Output current: 0.45A Number of channels: 1 Operating voltage: 6.5...20V DC On-state resistance: 16.8Ω Kind of integrated circuit: AC/DC switcher; PWM controller |
Produkt ist nicht verfügbar |
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NCP4306AAAZZZADR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC Type of integrated circuit: PMIC Output current: 2...7A Frequency: 1MHz Mounting: SMD Case: SO8 Topology: flyback; forward; resonant LLC Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.5...37V DC |
Produkt ist nicht verfügbar |
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NCP4306AADZZZADR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC Type of integrated circuit: PMIC Output current: 2...7A Frequency: 1MHz Mounting: SMD Case: SO8 Topology: flyback; forward; resonant LLC Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.5...37V DC |
Produkt ist nicht verfügbar |
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NCP4306AAHZZZADR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC Type of integrated circuit: PMIC Output current: 2...7A Frequency: 1MHz Mounting: SMD Case: SO8 Topology: flyback; forward; resonant LLC Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.5...37V DC |
Produkt ist nicht verfügbar |
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FDPF2D3N10C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 45W; TO220FP Mounting: THT Case: TO220FP Kind of package: tube Polarisation: unipolar Gate charge: 152nC On-state resistance: 2.3mΩ Gate-source voltage: ±20V Power dissipation: 45W Drain-source voltage: 100V Drain current: 157A Pulsed drain current: 888A Kind of channel: enhancement Type of transistor: N-MOSFET Technology: PowerTrench® |
auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC1496BDR2G | ONSEMI |
Category: RTV - audio integrated circuits Description: IC: modulator RF; 300MHz; SO14 Type of integrated circuit: modulator RF Frequency: 300MHz Mounting: SMD Case: SO14 Operating temperature: -40...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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NJW0302G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 250V; 15A; 150W; TO3P Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 15A Power dissipation: 150W Case: TO3P Current gain: 75...150 Mounting: THT Kind of package: tube Frequency: 30MHz Application: automotive industry |
auf Bestellung 241 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTHL040N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247 Type of transistor: N-MOSFET Power dissipation: 446W Case: TO247 Mounting: THT Gate charge: 158nC Kind of package: tube Pulsed drain current: 162.5A Drain-source voltage: 650V Kind of channel: enhancement Polarisation: unipolar On-state resistance: 40mΩ Technology: SuperFET® Drain current: 45A Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
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| NTMFS6H800NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 224A; Idm: 900A; 107W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 224A Pulsed drain current: 900A Power dissipation: 107W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Gate charge: 112nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| NTMFS6H800NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 203A; Idm: 900A; 100W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 203A Pulsed drain current: 900A Power dissipation: 100W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: SMD Gate charge: 85nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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MJE182G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 3A; 12.5W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 3A Power dissipation: 12.5W Case: TO225 Current gain: 50...250 Mounting: THT Kind of package: bulk Frequency: 50MHz |
auf Bestellung 399 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMFS6H824NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 110A; Idm: 722A; 58W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 110A Pulsed drain current: 722A Power dissipation: 58W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| NVMFS6H824NLWFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 110A; Idm: 722A; 58W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 110A Pulsed drain current: 722A Power dissipation: 58W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| NVMFS6H824NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 103A; Idm: 626A; 58W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 103A Pulsed drain current: 626A Power dissipation: 58W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| NVMFS6H824NWFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 103A; Idm: 626A; 58W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 103A Pulsed drain current: 626A Power dissipation: 58W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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74VHC139M | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 2; SMD; SO16; VHC; VHC Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 2 Mounting: SMD Case: SO16 Manufacturer series: VHC Operating temperature: -40...85°C Kind of package: tube Supply voltage: 2...5.5V DC Quiescent current: 40µA Family: VHC Number of inputs: 2 |
auf Bestellung 216 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74VHC1G07DFT1G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: SC88A Manufacturer series: VHC Operating temperature: -55...125°C Kind of package: reel; tape Supply voltage: 2...5.5V DC Quiescent current: 40µA Kind of output: open drain |
auf Bestellung 2985 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74VHC1G04DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Number of channels: single; 1 Technology: CMOS Mounting: SMD Case: SC88A Operating temperature: -55...125°C Kind of package: reel; tape Supply voltage: 2...5.5V DC Quiescent current: 40µA Kind of gate: NOT Family: VHC Number of inputs: 1 |
auf Bestellung 1391 Stücke: Lieferzeit 14-21 Tag (e) |
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M74VHC1G135DTT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Number of channels: single; 1 Technology: CMOS Mounting: SMD Case: TSOP5 Operating temperature: -55...125°C Kind of package: reel; tape Supply voltage: 2...5.5V DC Kind of gate: NAND Family: VHC Kind of input: with Schmitt trigger Number of inputs: 2 Kind of output: open drain |
auf Bestellung 1680 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74VHC1G02DTT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Number of channels: single; 1 Technology: CMOS Mounting: SMD Case: TSSOP5 Operating temperature: -55...125°C Kind of package: reel; tape Supply voltage: 2...5.5V DC Quiescent current: 40µA Kind of gate: NOR Family: VHC Number of inputs: 2 |
auf Bestellung 1570 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74VHC1G01DFT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Number of channels: single; 1 Technology: CMOS Mounting: SMD Case: SC88A Operating temperature: -55...125°C Kind of package: reel; tape Supply voltage: 2...5.5V DC Quiescent current: 40µA Kind of gate: NAND Family: VHC Number of inputs: 2 Kind of output: open drain |
auf Bestellung 1139 Stücke: Lieferzeit 14-21 Tag (e) |
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M74VHC1GT00DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; TTL; SMD; SC88A; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Number of channels: single; 1 Technology: TTL Mounting: SMD Case: SC88A Operating temperature: -55...125°C Kind of package: reel; tape Supply voltage: 2...5.5V DC Quiescent current: 40µA Kind of gate: NAND Family: VHC Number of inputs: 2 |
auf Bestellung 456 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74VHC1G09DTT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Number of channels: single; 1 Technology: CMOS Mounting: SMD Case: TSSOP5 Operating temperature: -55...125°C Kind of package: reel; tape Supply voltage: 2...5.5V DC Quiescent current: 40µA Kind of gate: AND Family: VHC Number of inputs: 2 Kind of output: open drain |
auf Bestellung 595 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC74VHC1G14DFT1G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; SMD; SC70-5 Type of integrated circuit: digital Kind of integrated circuit: inverter; Schmitt trigger Number of channels: 1 Number of inputs: 1 Mounting: SMD Case: SC70-5 Operating temperature: -55...125°C Quiescent current: 1µA Family: VHC |
auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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FSBB30CH60C | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMEC-027 Mounting: THT Number of channels: 6 Power dissipation: 106W Operating voltage: 13.5...16.5/0...400V DC Kind of integrated circuit: 3-phase motor controller; IPM Collector-emitter voltage: 600V Technology: Motion SPM® 3 Case: SPMEC-027 Type of integrated circuit: driver Topology: IGBT three-phase bridge Operating temperature: -40...150°C Output current: 30A |
auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) |
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BD438STU | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 45V; 4A; 36W; TO126ISO Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 4A Power dissipation: 36W Case: TO126ISO Mounting: THT Kind of package: tube Frequency: 3MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| DTC114TM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Current gain: 160...350 Power dissipation: 0.6W Quantity in set/package: 8000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NCV272DMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; Ch: 2; ±1.35÷18VDC,2.7÷36VDC Type of integrated circuit: operational amplifier Bandwidth: 3MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.35...18V DC; 2.7...36V DC Case: Micro8 Operating temperature: -40...125°C Slew rate: 2.4V/μs Integrated circuit features: rail-to-rail output Input offset voltage: 4mV Kind of package: reel; tape Input bias current: 2nA Input offset current: 0.5nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NCV272DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; Ch: 2; ±1.35÷18VDC,2.7÷36VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 3MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.35...18V DC; 2.7...36V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 2.4V/μs Integrated circuit features: rail-to-rail output Input offset voltage: 4mV Kind of package: reel; tape Input bias current: 2nA Input offset current: 0.5nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NCP154MX280270TAG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; XDFN8; SMD; reel,tape Mounting: SMD Kind of package: reel; tape Number of channels: 2 Case: XDFN8 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| CAT25020VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz; SOIC8 Case: SOIC8 Mounting: SMD Kind of package: reel; tape Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Kind of interface: serial Interface: SPI Operating temperature: -40...85°C Operating voltage: 1.8...5.5V Memory: 2kb EEPROM Clock frequency: 20MHz Memory organisation: 256x8bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| CAT25020YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz Case: TSSOP8 Mounting: SMD Kind of package: reel; tape Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Kind of interface: serial Interface: SPI Operating temperature: -40...85°C Operating voltage: 1.8...5.5V Memory: 2kb EEPROM Clock frequency: 20MHz Memory organisation: 256x8bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NTBG1000N170M1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3A; Idm: 14.6A; 25W Polarisation: unipolar Case: D2PAK-7 Kind of channel: enhancement Mounting: SMD Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Kind of package: reel; tape Technology: SiC Gate-source voltage: -5...20V Gate charge: 14nC On-state resistance: 1.8Ω Drain current: 3A Pulsed drain current: 14.6A Power dissipation: 25W Drain-source voltage: 1.7kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVBG1000N170M1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3A; Idm: 14.6A; 25W Polarisation: unipolar Case: D2PAK-7 Kind of channel: enhancement Mounting: SMD Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Kind of package: reel; tape Technology: SiC Gate-source voltage: -5...20V Gate charge: 14nC On-state resistance: 1.8Ω Drain current: 3A Pulsed drain current: 14.6A Power dissipation: 25W Drain-source voltage: 1.7kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| S100 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.85V Load current: 1A Max. forward impulse current: 40A Max. off-state voltage: 0.1kV Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
 |
NC7SZ08M5X | ONSEMI |
 Category: Gates, invertersDescription: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT23-5; 1.65÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: AND Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SOT23-5 Operating temperature: -40...85°C Quiescent current: 20µA Kind of package: reel; tape Supply voltage: 1.65...5.5V DC |
auf Bestellung 2840 Stücke: Lieferzeit 14-21 Tag (e) |
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NC7SZ08P5X | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC70-5; 1.65÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: AND Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SC70-5 Operating temperature: -40...85°C Quiescent current: 20µA Kind of package: reel; tape Supply voltage: 1.65...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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LM358N | ONSEMI |
Category: THT operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: dual; 2 Mounting: THT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: DIP8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDMC9430L-F085 |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 12A; 11.4W; Power33
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 11.4W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 12A; 11.4W; Power33
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 11.4W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC86262P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2A; Idm: -35A; 40W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -2A
Power dissipation: 40W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 307mΩ
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -35A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2A; Idm: -35A; 40W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -2A
Power dissipation: 40W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 307mΩ
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -35A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC8327L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 14A; Idm: 60A; 30W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 14A
Power dissipation: 30W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 14A; Idm: 60A; 30W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 14A
Power dissipation: 30W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC8097AC |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 150/-150V; 2.4/-0.9A; 1.9W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 150/-150V
Drain current: 2.4/-0.9A
Power dissipation: 1.9W
Case: Power33
Gate-source voltage: ±20V; ±25V
On-state resistance: 2171/306mΩ
Mounting: SMD
Gate charge: 4/6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 150/-150V; 2.4/-0.9A; 1.9W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 150/-150V
Drain current: 2.4/-0.9A
Power dissipation: 1.9W
Case: Power33
Gate-source voltage: ±20V; ±25V
On-state resistance: 2171/306mΩ
Mounting: SMD
Gate charge: 4/6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC86184 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 266A; 54W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 54W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 266A
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 266A; 54W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 54W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 266A
Technology: PowerTrench®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC86160ET100 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; Idm: 204A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 204A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; Idm: 204A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 204A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC86340 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 48A; Idm: 200A; 54W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 48A
Power dissipation: 54W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 48A; Idm: 200A; 54W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 48A
Power dissipation: 54W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC2610 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 42W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 42W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 397mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 42W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 42W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 397mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC6679AZ |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 41W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 41W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 41W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 41W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC6686P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -377A; 40W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -56A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±8V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -377A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -377A; 40W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -56A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±8V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -377A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC86261P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -9A; Idm: -20A; 40W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -9A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±25V
On-state resistance: 269mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -9A; Idm: -20A; 40W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -9A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±25V
On-state resistance: 269mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC7672 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 33W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 33W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 33W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 33W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC8360L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 240A; 54W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 54W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 240A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 240A; 54W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 54W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 240A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC86520L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 40W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 11.7mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 40W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 11.7mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC7672S |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 45A; 36W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 36W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 45A; 36W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 36W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC8321L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; Idm: 100A; 40W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 49A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 100A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; Idm: 100A; 40W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 49A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 100A
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| FDMC8360LET40 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 658A; 75W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 658A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 658A; 75W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 658A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC86116LZ |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 15A; 19W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.5A
Power dissipation: 19W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 178mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 15A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 15A; 19W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.5A
Power dissipation: 19W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 178mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 15A
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Im Einkaufswagen
Stück im Wert von UAH
| FDMC007N08LC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 330A; 57W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 330A
Power dissipation: 57W
Case: PQFN8
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 330A; 57W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 330A
Power dissipation: 57W
Case: PQFN8
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FDMC007N08LCDC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 41A; Idm: 339A; 57W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 41A
Pulsed drain current: 339A
Power dissipation: 57W
Case: PQFN8
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 41A; Idm: 339A; 57W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 41A
Pulsed drain current: 339A
Power dissipation: 57W
Case: PQFN8
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP551SN33T1G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 3.3V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 3.3V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...12V
Produkt ist nicht verfügbar
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| NCP1075BAP065G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Operating temperature: -40...125°C
Frequency: 59...71kHz
Case: DIP8
Topology: flyback
Type of integrated circuit: PMIC
Mounting: SMD
Output current: 0.4A
Number of channels: 1
Operating voltage: 6.5...20V DC
On-state resistance: 16.8Ω
Kind of integrated circuit: AC/DC switcher; PWM controller
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Operating temperature: -40...125°C
Frequency: 59...71kHz
Case: DIP8
Topology: flyback
Type of integrated circuit: PMIC
Mounting: SMD
Output current: 0.4A
Number of channels: 1
Operating voltage: 6.5...20V DC
On-state resistance: 16.8Ω
Kind of integrated circuit: AC/DC switcher; PWM controller
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1075BAP130G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Operating temperature: -40...125°C
Frequency: 117...143kHz
Case: DIP8
Topology: flyback
Type of integrated circuit: PMIC
Mounting: SMD
Output current: 0.45A
Number of channels: 1
Operating voltage: 6.5...20V DC
On-state resistance: 16.8Ω
Kind of integrated circuit: AC/DC switcher; PWM controller
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Operating temperature: -40...125°C
Frequency: 117...143kHz
Case: DIP8
Topology: flyback
Type of integrated circuit: PMIC
Mounting: SMD
Output current: 0.45A
Number of channels: 1
Operating voltage: 6.5...20V DC
On-state resistance: 16.8Ω
Kind of integrated circuit: AC/DC switcher; PWM controller
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NCP4306AAAZZZADR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
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Im Einkaufswagen
Stück im Wert von UAH
| NCP4306AADZZZADR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP4306AAHZZZADR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FDPF2D3N10C |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 45W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Polarisation: unipolar
Gate charge: 152nC
On-state resistance: 2.3mΩ
Gate-source voltage: ±20V
Power dissipation: 45W
Drain-source voltage: 100V
Drain current: 157A
Pulsed drain current: 888A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 45W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Polarisation: unipolar
Gate charge: 152nC
On-state resistance: 2.3mΩ
Gate-source voltage: ±20V
Power dissipation: 45W
Drain-source voltage: 100V
Drain current: 157A
Pulsed drain current: 888A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.46 EUR |
| 12+ | 6.15 EUR |
| 14+ | 5.45 EUR |
| 25+ | 5 EUR |
| MC1496BDR2G |
|
Hersteller: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: modulator RF; 300MHz; SO14
Type of integrated circuit: modulator RF
Frequency: 300MHz
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: RTV - audio integrated circuits
Description: IC: modulator RF; 300MHz; SO14
Type of integrated circuit: modulator RF
Frequency: 300MHz
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NJW0302G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 15A; 150W; TO3P
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 150W
Case: TO3P
Current gain: 75...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 15A; 150W; TO3P
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 150W
Case: TO3P
Current gain: 75...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
auf Bestellung 241 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.05 EUR |
| 20+ | 3.75 EUR |
| 26+ | 2.82 EUR |
| 30+ | 2.45 EUR |
| 32+ | 2.26 EUR |
| 120+ | 2.19 EUR |
| NTHL040N65S3F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Pulsed drain current: 162.5A
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 40mΩ
Technology: SuperFET®
Drain current: 45A
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Pulsed drain current: 162.5A
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 40mΩ
Technology: SuperFET®
Drain current: 45A
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS6H800NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 224A; Idm: 900A; 107W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 224A
Pulsed drain current: 900A
Power dissipation: 107W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 224A; Idm: 900A; 107W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 224A
Pulsed drain current: 900A
Power dissipation: 107W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS6H800NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 203A; Idm: 900A; 100W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 203A
Pulsed drain current: 900A
Power dissipation: 100W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 203A; Idm: 900A; 100W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 203A
Pulsed drain current: 900A
Power dissipation: 100W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJE182G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 12.5W
Case: TO225
Current gain: 50...250
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 12.5W
Case: TO225
Current gain: 50...250
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
auf Bestellung 399 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.26 EUR |
| 88+ | 0.81 EUR |
| 113+ | 0.63 EUR |
| 127+ | 0.56 EUR |
| NVMFS6H824NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; Idm: 722A; 58W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 110A
Pulsed drain current: 722A
Power dissipation: 58W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; Idm: 722A; 58W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 110A
Pulsed drain current: 722A
Power dissipation: 58W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS6H824NLWFT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; Idm: 722A; 58W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 110A
Pulsed drain current: 722A
Power dissipation: 58W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; Idm: 722A; 58W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 110A
Pulsed drain current: 722A
Power dissipation: 58W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS6H824NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 103A; Idm: 626A; 58W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 103A
Pulsed drain current: 626A
Power dissipation: 58W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 103A; Idm: 626A; 58W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 103A
Pulsed drain current: 626A
Power dissipation: 58W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS6H824NWFT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 103A; Idm: 626A; 58W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 103A
Pulsed drain current: 626A
Power dissipation: 58W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 103A; Idm: 626A; 58W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 103A
Pulsed drain current: 626A
Power dissipation: 58W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74VHC139M |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 2; SMD; SO16; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: SO16
Manufacturer series: VHC
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Family: VHC
Number of inputs: 2
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 2; SMD; SO16; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: SO16
Manufacturer series: VHC
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Family: VHC
Number of inputs: 2
auf Bestellung 216 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 90+ | 0.8 EUR |
| 108+ | 0.67 EUR |
| 135+ | 0.53 EUR |
| MC74VHC1G07DFT1G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: VHC
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Kind of output: open drain
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: VHC
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Kind of output: open drain
auf Bestellung 2985 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 385+ | 0.19 EUR |
| 421+ | 0.17 EUR |
| 435+ | 0.16 EUR |
| MC74VHC1G04DFT2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Kind of gate: NOT
Family: VHC
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Kind of gate: NOT
Family: VHC
Number of inputs: 1
auf Bestellung 1391 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 556+ | 0.13 EUR |
| 725+ | 0.099 EUR |
| M74VHC1G135DTT1G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Kind of gate: NAND
Family: VHC
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of output: open drain
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Kind of gate: NAND
Family: VHC
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of output: open drain
auf Bestellung 1680 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 585+ | 0.12 EUR |
| 685+ | 0.1 EUR |
| 1000+ | 0.089 EUR |
| MC74VHC1G02DTT1G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Kind of gate: NOR
Family: VHC
Number of inputs: 2
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Kind of gate: NOR
Family: VHC
Number of inputs: 2
auf Bestellung 1570 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 777+ | 0.092 EUR |
| 901+ | 0.079 EUR |
| 1000+ | 0.072 EUR |
| MC74VHC1G01DFT1G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Kind of gate: NAND
Family: VHC
Number of inputs: 2
Kind of output: open drain
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Kind of gate: NAND
Family: VHC
Number of inputs: 2
Kind of output: open drain
auf Bestellung 1139 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 782+ | 0.092 EUR |
| 906+ | 0.079 EUR |
| 1134+ | 0.063 EUR |
| M74VHC1GT00DFT2G |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; TTL; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: TTL
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Kind of gate: NAND
Family: VHC
Number of inputs: 2
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; TTL; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: TTL
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Kind of gate: NAND
Family: VHC
Number of inputs: 2
auf Bestellung 456 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 456+ | 0.16 EUR |
| MC74VHC1G09DTT1G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Kind of gate: AND
Family: VHC
Number of inputs: 2
Kind of output: open drain
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Kind of gate: AND
Family: VHC
Number of inputs: 2
Kind of output: open drain
auf Bestellung 595 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 500+ | 0.14 EUR |
| 595+ | 0.12 EUR |
| MC74VHC1G14DFT1G-Q |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; SMD; SC70-5
Type of integrated circuit: digital
Kind of integrated circuit: inverter; Schmitt trigger
Number of channels: 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: VHC
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; SMD; SC70-5
Type of integrated circuit: digital
Kind of integrated circuit: inverter; Schmitt trigger
Number of channels: 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: VHC
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 18000+ | 0.034 EUR |
| FSBB30CH60C |
|
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMEC-027
Mounting: THT
Number of channels: 6
Power dissipation: 106W
Operating voltage: 13.5...16.5/0...400V DC
Kind of integrated circuit: 3-phase motor controller; IPM
Collector-emitter voltage: 600V
Technology: Motion SPM® 3
Case: SPMEC-027
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Operating temperature: -40...150°C
Output current: 30A
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMEC-027
Mounting: THT
Number of channels: 6
Power dissipation: 106W
Operating voltage: 13.5...16.5/0...400V DC
Kind of integrated circuit: 3-phase motor controller; IPM
Collector-emitter voltage: 600V
Technology: Motion SPM® 3
Case: SPMEC-027
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Operating temperature: -40...150°C
Output current: 30A
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 24.71 EUR |
| BD438STU |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 45V; 4A; 36W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 4A
Power dissipation: 36W
Case: TO126ISO
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 45V; 4A; 36W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 4A
Power dissipation: 36W
Case: TO126ISO
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC114TM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Current gain: 160...350
Power dissipation: 0.6W
Quantity in set/package: 8000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Current gain: 160...350
Power dissipation: 0.6W
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV272DMR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 2; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Case: Micro8
Operating temperature: -40...125°C
Slew rate: 2.4V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 2nA
Input offset current: 0.5nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 2; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Case: Micro8
Operating temperature: -40...125°C
Slew rate: 2.4V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 2nA
Input offset current: 0.5nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV272DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 2; ±1.35÷18VDC,2.7÷36VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 2.4V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 2nA
Input offset current: 0.5nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 2; ±1.35÷18VDC,2.7÷36VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 2.4V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 2nA
Input offset current: 0.5nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP154MX280270TAG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; XDFN8; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Case: XDFN8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; XDFN8; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Case: XDFN8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT25020VI-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 2kb EEPROM
Clock frequency: 20MHz
Memory organisation: 256x8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 2kb EEPROM
Clock frequency: 20MHz
Memory organisation: 256x8bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT25020YI-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 2kb EEPROM
Clock frequency: 20MHz
Memory organisation: 256x8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 2kb EEPROM
Clock frequency: 20MHz
Memory organisation: 256x8bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTBG1000N170M1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3A; Idm: 14.6A; 25W
Polarisation: unipolar
Case: D2PAK-7
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 14nC
On-state resistance: 1.8Ω
Drain current: 3A
Pulsed drain current: 14.6A
Power dissipation: 25W
Drain-source voltage: 1.7kV
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3A; Idm: 14.6A; 25W
Polarisation: unipolar
Case: D2PAK-7
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 14nC
On-state resistance: 1.8Ω
Drain current: 3A
Pulsed drain current: 14.6A
Power dissipation: 25W
Drain-source voltage: 1.7kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVBG1000N170M1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3A; Idm: 14.6A; 25W
Polarisation: unipolar
Case: D2PAK-7
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 14nC
On-state resistance: 1.8Ω
Drain current: 3A
Pulsed drain current: 14.6A
Power dissipation: 25W
Drain-source voltage: 1.7kV
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3A; Idm: 14.6A; 25W
Polarisation: unipolar
Case: D2PAK-7
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 14nC
On-state resistance: 1.8Ω
Drain current: 3A
Pulsed drain current: 14.6A
Power dissipation: 25W
Drain-source voltage: 1.7kV
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| S100 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.85V
Load current: 1A
Max. forward impulse current: 40A
Max. off-state voltage: 0.1kV
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.85V
Load current: 1A
Max. forward impulse current: 40A
Max. off-state voltage: 0.1kV
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NC7SZ08M5X | |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT23-5; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...85°C
Quiescent current: 20µA
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT23-5; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...85°C
Quiescent current: 20µA
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
auf Bestellung 2840 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1299+ | 0.055 EUR |
| 1667+ | 0.043 EUR |
| 1806+ | 0.04 EUR |
| 1887+ | 0.038 EUR |
| 2101+ | 0.034 EUR |
| 2174+ | 0.033 EUR |
| NC7SZ08P5X |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC70-5; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -40...85°C
Quiescent current: 20µA
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC70-5; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -40...85°C
Quiescent current: 20µA
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Produkt ist nicht verfügbar
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| LM358N |
|
Hersteller: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP8
Category: THT operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP8
Produkt ist nicht verfügbar
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