NVTFWS003N04CTAG ON Semiconductor
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 1.06 EUR |
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Technische Details NVTFWS003N04CTAG ON Semiconductor
Description: MOSFET N-CH 40V 22A/103A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 103A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V, Power Dissipation (Max): 3.2W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 60µA, Supplier Device Package: 8-WDFN (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVTFWS003N04CTAG nach Preis ab 1.11 EUR bis 3.85 EUR
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NVTFWS003N04CTAG | Hersteller : onsemi |
 Description: MOSFET N-CH 40V 22A/103A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 103A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS003N04CTAG | Hersteller : onsemi |
MOSFETs Single N-Chn Pwr Mosfet 40V |
auf Bestellung 1200 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS003N04CTAG | Hersteller : onsemi |
Description: MOSFET N-CH 40V 22A/103A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 103A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4360 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVTFWS003N04CTAG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 40V 22A Automotive 8-Pin WDFN EP T/R |
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NVTFWS003N04CTAG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 40V 22A Automotive 8-Pin WDFNW EP T/R |
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| NVTFWS003N04CTAG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 103A; Idm: 484A; 22W; WDFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 103A Pulsed drain current: 484A Power dissipation: 22W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |