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EC4401C-TL EC4401C-TL onsemi EC4401C.pdf Description: MOSFET N-CH 30V 150MA ECSP1008-4
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: 4-ECSP1008
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7 pF @ 10 V
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EC4401C-TL EC4401C-TL onsemi EC4401C.pdf Description: MOSFET N-CH 30V 150MA ECSP1008-4
Packaging: Bulk
Package / Case: 4-UFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: 4-ECSP1008
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7 pF @ 10 V
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EC4H08C-TL-H EC4H08C-TL-H onsemi EC4H08C.pdf Description: RF TRANS NPN 3.5V 24GHZ ECSP1008
Packaging: Bulk
Package / Case: 4-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 17dB
Power - Max: 50mW
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 3.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V
Frequency - Transition: 24GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Supplier Device Package: 4-ECSP1008
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EC4H09C-TL-H EC4H09C-TL-H onsemi EC4H09C.pdf Description: RF TRANS NPN 3.5V 26GHZ ECSP1008
Packaging: Bulk
Package / Case: 4-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15dB
Power - Max: 120mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 3.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V
Frequency - Transition: 26GHz
Noise Figure (dB Typ @ f): 1.3dB @ 2GHz
Supplier Device Package: 4-ECSP1008
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NIS5112D1R2G NIS5112D1R2G onsemi nis5112-d.pdf Description: IC ELECTRONIC FUSE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 18V
Current - Output: 2A
Operating Temperature: -40°C ~ 175°C
Supplier Device Package: 8-SOIC
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NIS5112D2R2G NIS5112D2R2G onsemi nis5112-d.pdf Description: IC ELECTRONIC FUSE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 18V
Current - Output: 2A
Operating Temperature: -40°C ~ 175°C
Supplier Device Package: 8-SOIC
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NB4N7132DTR2G NB4N7132DTR2G onsemi NB4N7132.pdf Description: IC CLK LINK REPLICATOR HDTV
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Input: LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.14V ~ 3.47V
Main Purpose: Fibre Channel, Gigabit Ethernet, HDTV, SATA
Ratio - Input:Output: 3:3
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-TSSOP
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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NB4N7132DTG NB4N7132DTG onsemi NB4N7132.pdf Description: IC CLK LINK REPLICATOR HDTV
Packaging: Tube
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Input: LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.14V ~ 3.47V
Main Purpose: Fibre Channel, Gigabit Ethernet, HDTV, SATA
Ratio - Input:Output: 3:3
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-TSSOP
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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NCP81611AMNTXG NCP81611AMNTXG onsemi Description: NVIDIA OVR4I+ CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 100°C (TA)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 2.8V ~ 20V
Supplier Device Package: 40-QFN (5x5)
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control, Phase Control, Power Good, Soft Start
Serial Interfaces: Psi
Output Phases: 4
Clock Sync: Yes
Number of Outputs: 1
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NCP81611AMNTXG NCP81611AMNTXG onsemi Description: NVIDIA OVR4I+ CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 100°C (TA)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 2.8V ~ 20V
Supplier Device Package: 40-QFN (5x5)
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control, Phase Control, Power Good, Soft Start
Serial Interfaces: Psi
Output Phases: 4
Clock Sync: Yes
Number of Outputs: 1
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NVMJD5D4N04CTWG NVMJD5D4N04CTWG onsemi nvmjd5d4n04c-d.pdf Description: MOSFET N-CH 40V LFPAK56
Packaging: Cut Tape (CT)
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NVMJD7D4N04CLTWG onsemi NVMJD7D4N04CL-D.PDF Description: MOSFET N-CH 40V LFPAK56
Packaging: Cut Tape (CT)
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RMPA2259 RMPA2259 onsemi RMPA2259.pdf Description: IC AMP W-CDMA 1.92-1.98GHZ 11LCC
Packaging: Tape & Reel (TR)
Package / Case: 10-LDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.92GHz ~ 1.98GHz
RF Type: W-CDMA
Voltage - Supply: 3V ~ 4.2V
Gain: 24dB
Current - Supply: 50mA
Noise Figure: 3dB
Supplier Device Package: 11-LCC (4x4)
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RMPA2259 RMPA2259 onsemi RMPA2259.pdf Description: IC AMP W-CDMA 1.92-1.98GHZ 11LCC
Packaging: Cut Tape (CT)
Package / Case: 10-LDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.92GHz ~ 1.98GHz
RF Type: W-CDMA
Voltage - Supply: 3V ~ 4.2V
Gain: 24dB
Current - Supply: 50mA
Noise Figure: 3dB
Supplier Device Package: 11-LCC (4x4)
Produkt ist nicht verfügbar
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TIP30A TIP30A onsemi TIP29B-D.PDF Description: TRANS PNP 60V 1A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 4V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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FAN4800AUM FAN4800AUM onsemi fan4800cu-d.pdf Description: IC PFC CTR AV CURR 268KHZ 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 22V
Frequency - Switching: 240kHz ~ 268kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 30 µA
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FD6M043N08 FD6M043N08 onsemi FD6M043N08.pdf Description: MOSFET 2N-CH 75V 65A EPM15
Supplier Device Package: EPM15
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 148nC @ 10V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 40A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6180pF @ 25V
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Through Hole
Package / Case: EPM15
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 65A
Drain to Source Voltage (Vdss): 75V
Produkt ist nicht verfügbar
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LM317LMX LM317LMX onsemi lm317l-d.pdf Description: IC REG LIN POS ADJ 100MA 8SOIC
Protection Features: Over Current, Over Temperature, Short Circuit
PSRR: 80dB (120Hz)
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): 37V
Supplier Device Package: 8-SOIC
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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LM317LMX LM317LMX onsemi lm317l-d.pdf Description: IC REG LIN POS ADJ 100MA 8SOIC
Protection Features: Over Current, Over Temperature, Short Circuit
PSRR: 80dB (120Hz)
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): 37V
Supplier Device Package: 8-SOIC
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TIP31 TIP31 onsemi tip31a-d.pdf Description: TRANS NPN 40V 3A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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TIP31ATU TIP31ATU onsemi TIP31_A_B_C%2C%20TIP32_A_B_C.pdf Description: TRANS NPN 60V 3A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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74ACT74SC 74ACT74SC onsemi DS_261_74ACT74.pdf Description: IC FF D-TYPE DOUBLE 1BIT 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 20 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 210 MHz
Input Capacitance: 4.5 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Number of Bits per Element: 1
Produkt ist nicht verfügbar
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74ACT74SJ 74ACT74SJ onsemi DS_261_74ACT74.pdf Description: IC FF D-TYPE DOUBLE 1BIT 14-SOP
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 20 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 210 MHz
Input Capacitance: 4.5 pF
Supplier Device Package: 14-SOP
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Number of Bits per Element: 1
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74ACT74SJX 74ACT74SJX onsemi DS_261_74ACT74.pdf Description: IC FF D-TYPE DOUBLE 1BIT 14-SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 20 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 210 MHz
Input Capacitance: 4.5 pF
Supplier Device Package: 14-SOP
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Number of Bits per Element: 1
Produkt ist nicht verfügbar
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1.5KE12ARL4G 1.5KE12ARL4G onsemi ONSMS21119-1.pdf?t.download=true&u=5oefqw Description: TVS DIODE 10.2VWM 16.7VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 90A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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TIP122 TIP122 onsemi TIP120-22.pdf Description: TRANS NPN DARL 100V 5A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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KSC2328AOBU KSC2328AOBU onsemi ksc2328a-d.pdf Description: TRANS NPN 30V 2A TO-92-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-92-3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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UJ3D1725K2 UJ3D1725K2 onsemi UJ3D1725K2-D.PDF Description: DIODE SIL CARB 1700V 25A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1500pF @ 1V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Current - Reverse Leakage @ Vr: 360 µA @ 1700 V
Qualification: AEC-Q101
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UJ3D1250K2 UJ3D1250K2 onsemi da008695 Description: DIODE SIL CARB 1200V 50A TO2472
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 50A
Capacitance @ Vr, F: 2340pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
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UJ3D1205TS UJ3D1205TS onsemi UJ3D1205TS-D.PDF Description: DIODE SIL CARBIDE 1200V 5A TO220
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 55 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
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500+3.59 EUR
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UJ3D06560KSD UJ3D06560KSD onsemi UJ3D06560KSD-D.PDF Description: DIODE SIL CARB 650V 30A TO247-3
Current - Reverse Leakage @ Vr: 740 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 1980pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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UJ3D1250K UJ3D1250K onsemi da008694 Description: DIODE SIL CARB 1200V 50A TO2473
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 50A
Capacitance @ Vr, F: 2340pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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UJ3D1202TS UJ3D1202TS onsemi UJ3D1202TS-D.PDF Description: DIODE SIL CARBIDE 1200V 2A TO220
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 109pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 22 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
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UJ3D06506TS UJ3D06506TS onsemi DS_UJ3D06506TS.pdf Description: DIODE SIL CARB 650V 6A TO220-2
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 196pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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UJ3D06508TS UJ3D06508TS onsemi DS_UJ3D06508TS.pdf Description: DIODE SIL CARB 650V 8A TO220-2
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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UJ3D06510TS UJ3D06510TS onsemi DS_UJ3D06510TS.pdf Description: DIODE SIL CARB 650V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 327pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
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UJ3D06520TS UJ3D06520TS onsemi DS_UJ3D06520TS.pdf Description: DIODE SIL CARB 650V 20A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 654pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
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UJ3D1210TS UJ3D1210TS onsemi UJ3D1210TS-D.PDF Description: DIODE SIL CARB 1200V 10A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 510pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
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UJ3D1220KSD UJ3D1220KSD onsemi UJ3D1220KSD-D.PDF Description: DIODE SIL CARB 1200V 10A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1020pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 220 µA @ 1200 V
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UJ3D06504TS UJ3D06504TS onsemi DS_UJ3D06504TS.pdf Description: DIODE SIL CARB 650V 4A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 118pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
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UJ3D06512TS UJ3D06512TS onsemi DS_UJ3D06512TS.pdf Description: DIODE SIL CARB 650V 12A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
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UJ3D06516TS UJ3D06516TS onsemi DS_UJ3D06516TS.pdf Description: DIODE SIL CARB 650V 16A TO220-2
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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UJ3D1210K2 UJ3D1210K2 onsemi UJ3D1210K2-D.PDF Description: DIODE SIL CARB 1200V 10A TO2472
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 510pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
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UJ3D06530TS UJ3D06530TS onsemi DS_UJ3D06530TS.pdf Description: DIODE SIL CARB 650V 30A TO220-2
Current - Reverse Leakage @ Vr: 370 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 990pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
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UJ3D1220K2 UJ3D1220K2 onsemi da008692 Description: DIODE SIL CARB 1200V 20A TO2472
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 190 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 810pF @ 1V, 1MHz
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UJ3D06520KSD UJ3D06520KSD onsemi UJ3D06520KSD-D.PDF Description: DIODE SIL CARB 650V 10A TO247-3
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 654pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
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UJ3D1210KSD UJ3D1210KSD onsemi UJ3D1210KSD-D.PDF Description: DIODE SIL CARB 1200V 5A TO2473
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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UJ3D1210KS UJ3D1210KS onsemi UJ3D1210KS-D.PDF Description: DIODE SIL CARB 1200V 10A TO2473
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 510pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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NBXDBA009LNHTAG NBXDBA009LNHTAG onsemi Description: IC OSC XTAL DUAL FREQ 6CLCC
Current - Supply: 79 mA
Supplier Device Package: 6-CLCC (7x5)
Voltage - Supply: 2.97V ~ 3.63V
Operating Temperature: -40°C ~ 85°C
Type: Oscillator, Crystal
Frequency: 75MHz, 150MHz
Mounting Type: Surface Mount
Package / Case: 6-CLCC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MM74HC4316M MM74HC4316M onsemi MM74HC4316.pdf Description: IC SWITCH SPST-NOX4 70OHM 16SOIC
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 100nA
Switch Time (Ton, Toff) (Max): 14ns, 20ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -50dB @ 1MHz
Voltage - Supply, Dual (V±): ±2V ~ 6V
Voltage - Supply, Single (V+): 2V ~ 12V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 100MHz
On-State Resistance (Max): 70Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Produkt ist nicht verfügbar
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FAN5776UCX FAN5776UCX onsemi fan5776-d.pdf Description: IC LED DRV RGLTR PWM 12WLCSP
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 2.3V
Dimming: PWM
Supplier Device Package: 12-WLCSP (1.42x1.66)
Topology: Step-Up (Boost)
Internal Switch(s): Yes
Current - Output / Channel: 25mA
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
Type: DC DC Regulator
Frequency: 1.8MHz
Number of Outputs: 5
Mounting Type: Surface Mount
Voltage - Output: 3.5V ~ 8.5V
Package / Case: 12-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
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FAN5776UCX FAN5776UCX onsemi fan5776-d.pdf Description: IC LED DRV RGLTR PWM 12WLCSP
Internal Switch(s): Yes
Current - Output / Channel: 25mA
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
Type: DC DC Regulator
Frequency: 1.8MHz
Number of Outputs: 5
Mounting Type: Surface Mount
Voltage - Output: 3.5V ~ 8.5V
Package / Case: 12-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 2.3V
Dimming: PWM
Supplier Device Package: 12-WLCSP (1.42x1.66)
Topology: Step-Up (Boost)
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HT8822N onsemi Description: IC PWR CONV TBD 8-MDIP
Packaging: Tube
Produkt ist nicht verfügbar
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MC33164P-5RAG MC33164P-5RAG onsemi mc34164-d.pdf Description: IC SUPERVISOR 1 CHANNEL TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4.33V
Supplier Device Package: TO-92 (TO-226)
DigiKey Programmable: Not Verified
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975+0.52 EUR
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74VHC112M 74VHC112M onsemi ONSM-S-A0003546545-1.pdf?t.download=true&u=5oefqw Description: IC FF JK TYPE DUAL 1BIT 16SOIC
Number of Bits per Element: 1
Max Propagation Delay @ V, Max CL: 10.5ns @ 5V, 50pF
Supplier Device Package: 16-SOIC
Input Capacitance: 4 pF
Clock Frequency: 185 MHz
Trigger Type: Negative Edge
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Iq): 2 µA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: JK Type
Function: Set(Preset) and Reset
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Complementary
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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74VHC112M 74VHC112M onsemi ONSM-S-A0003546545-1.pdf?t.download=true&u=5oefqw Description: IC FF JK TYPE DUAL 1BIT 16SOIC
Number of Bits per Element: 1
Max Propagation Delay @ V, Max CL: 10.5ns @ 5V, 50pF
Supplier Device Package: 16-SOIC
Input Capacitance: 4 pF
Clock Frequency: 185 MHz
Trigger Type: Negative Edge
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Iq): 2 µA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: JK Type
Function: Set(Preset) and Reset
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Complementary
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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UF3C170400B7S UF3C170400B7S onsemi UF3C170400B7S-D.PDF Description: SICFET N-CH 1700V 7.6A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 734 pF @ 1200 V
Produkt ist nicht verfügbar
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UF3C170400B7S UF3C170400B7S onsemi UF3C170400B7S-D.PDF Description: SICFET N-CH 1700V 7.6A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 734 pF @ 1200 V
auf Bestellung 101 Stücke:
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2+17.16 EUR
10+11.85 EUR
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UJ4C075060K3S UJ4C075060K3S onsemi uj4c075060k3s-d.pdf Description: SICFET N-CH 750V 28A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V
auf Bestellung 14453 Stücke:
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UJ4C075060K4S UJ4C075060K4S onsemi UJ4C075060K4S-D.PDF Description: SICFET N-CH 750V 28A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V
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EC4401C-TL EC4401C.pdf
EC4401C-TL
Hersteller: onsemi
Description: MOSFET N-CH 30V 150MA ECSP1008-4
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: 4-ECSP1008
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7 pF @ 10 V
Produkt ist nicht verfügbar
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EC4401C-TL EC4401C.pdf
EC4401C-TL
Hersteller: onsemi
Description: MOSFET N-CH 30V 150MA ECSP1008-4
Packaging: Bulk
Package / Case: 4-UFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: 4-ECSP1008
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7 pF @ 10 V
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2219+0.24 EUR
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EC4H08C-TL-H EC4H08C.pdf
EC4H08C-TL-H
Hersteller: onsemi
Description: RF TRANS NPN 3.5V 24GHZ ECSP1008
Packaging: Bulk
Package / Case: 4-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 17dB
Power - Max: 50mW
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 3.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V
Frequency - Transition: 24GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Supplier Device Package: 4-ECSP1008
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AnzahlPreis
606+0.84 EUR
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EC4H09C-TL-H EC4H09C.pdf
EC4H09C-TL-H
Hersteller: onsemi
Description: RF TRANS NPN 3.5V 26GHZ ECSP1008
Packaging: Bulk
Package / Case: 4-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15dB
Power - Max: 120mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 3.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V
Frequency - Transition: 26GHz
Noise Figure (dB Typ @ f): 1.3dB @ 2GHz
Supplier Device Package: 4-ECSP1008
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AnzahlPreis
437+1.17 EUR
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NIS5112D1R2G nis5112-d.pdf
NIS5112D1R2G
Hersteller: onsemi
Description: IC ELECTRONIC FUSE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 18V
Current - Output: 2A
Operating Temperature: -40°C ~ 175°C
Supplier Device Package: 8-SOIC
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AnzahlPreis
183+2.77 EUR
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NIS5112D2R2G nis5112-d.pdf
NIS5112D2R2G
Hersteller: onsemi
Description: IC ELECTRONIC FUSE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 18V
Current - Output: 2A
Operating Temperature: -40°C ~ 175°C
Supplier Device Package: 8-SOIC
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AnzahlPreis
157+3.23 EUR
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NB4N7132DTR2G NB4N7132.pdf
NB4N7132DTR2G
Hersteller: onsemi
Description: IC CLK LINK REPLICATOR HDTV
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Input: LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.14V ~ 3.47V
Main Purpose: Fibre Channel, Gigabit Ethernet, HDTV, SATA
Ratio - Input:Output: 3:3
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-TSSOP
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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76+6.45 EUR
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NB4N7132DTG NB4N7132.pdf
NB4N7132DTG
Hersteller: onsemi
Description: IC CLK LINK REPLICATOR HDTV
Packaging: Tube
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Input: LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.14V ~ 3.47V
Main Purpose: Fibre Channel, Gigabit Ethernet, HDTV, SATA
Ratio - Input:Output: 3:3
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-TSSOP
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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76+6.45 EUR
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NCP81611AMNTXG
NCP81611AMNTXG
Hersteller: onsemi
Description: NVIDIA OVR4I+ CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 100°C (TA)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 2.8V ~ 20V
Supplier Device Package: 40-QFN (5x5)
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control, Phase Control, Power Good, Soft Start
Serial Interfaces: Psi
Output Phases: 4
Clock Sync: Yes
Number of Outputs: 1
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5000+1.93 EUR
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NCP81611AMNTXG
NCP81611AMNTXG
Hersteller: onsemi
Description: NVIDIA OVR4I+ CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 100°C (TA)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 2.8V ~ 20V
Supplier Device Package: 40-QFN (5x5)
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control, Phase Control, Power Good, Soft Start
Serial Interfaces: Psi
Output Phases: 4
Clock Sync: Yes
Number of Outputs: 1
auf Bestellung 5000 Stücke:
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5+3.82 EUR
10+2.83 EUR
25+2.58 EUR
100+2.31 EUR
250+2.18 EUR
500+2.1 EUR
1000+2.04 EUR
2500+1.97 EUR
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NVMJD5D4N04CTWG nvmjd5d4n04c-d.pdf
NVMJD5D4N04CTWG
Hersteller: onsemi
Description: MOSFET N-CH 40V LFPAK56
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
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AnzahlPreis
7+2.59 EUR
10+1.91 EUR
25+1.73 EUR
100+1.54 EUR
250+1.45 EUR
500+1.4 EUR
1000+1.39 EUR
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NVMJD7D4N04CLTWG NVMJD7D4N04CL-D.PDF
Hersteller: onsemi
Description: MOSFET N-CH 40V LFPAK56
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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RMPA2259 RMPA2259.pdf
RMPA2259
Hersteller: onsemi
Description: IC AMP W-CDMA 1.92-1.98GHZ 11LCC
Packaging: Tape & Reel (TR)
Package / Case: 10-LDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.92GHz ~ 1.98GHz
RF Type: W-CDMA
Voltage - Supply: 3V ~ 4.2V
Gain: 24dB
Current - Supply: 50mA
Noise Figure: 3dB
Supplier Device Package: 11-LCC (4x4)
Produkt ist nicht verfügbar
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RMPA2259 RMPA2259.pdf
RMPA2259
Hersteller: onsemi
Description: IC AMP W-CDMA 1.92-1.98GHZ 11LCC
Packaging: Cut Tape (CT)
Package / Case: 10-LDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.92GHz ~ 1.98GHz
RF Type: W-CDMA
Voltage - Supply: 3V ~ 4.2V
Gain: 24dB
Current - Supply: 50mA
Noise Figure: 3dB
Supplier Device Package: 11-LCC (4x4)
Produkt ist nicht verfügbar
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TIP30A TIP29B-D.PDF
TIP30A
Hersteller: onsemi
Description: TRANS PNP 60V 1A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 4V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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FAN4800AUM fan4800cu-d.pdf
FAN4800AUM
Hersteller: onsemi
Description: IC PFC CTR AV CURR 268KHZ 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 22V
Frequency - Switching: 240kHz ~ 268kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 30 µA
auf Bestellung 5062 Stücke:
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AnzahlPreis
9+2.16 EUR
12+1.58 EUR
25+1.43 EUR
100+1.27 EUR
250+1.19 EUR
500+1.15 EUR
1000+1.13 EUR
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FD6M043N08 FD6M043N08.pdf
FD6M043N08
Hersteller: onsemi
Description: MOSFET 2N-CH 75V 65A EPM15
Supplier Device Package: EPM15
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 148nC @ 10V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 40A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6180pF @ 25V
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Through Hole
Package / Case: EPM15
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 65A
Drain to Source Voltage (Vdss): 75V
Produkt ist nicht verfügbar
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LM317LMX lm317l-d.pdf
LM317LMX
Hersteller: onsemi
Description: IC REG LIN POS ADJ 100MA 8SOIC
Protection Features: Over Current, Over Temperature, Short Circuit
PSRR: 80dB (120Hz)
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): 37V
Supplier Device Package: 8-SOIC
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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LM317LMX lm317l-d.pdf
LM317LMX
Hersteller: onsemi
Description: IC REG LIN POS ADJ 100MA 8SOIC
Protection Features: Over Current, Over Temperature, Short Circuit
PSRR: 80dB (120Hz)
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): 37V
Supplier Device Package: 8-SOIC
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TIP31 tip31a-d.pdf
TIP31
Hersteller: onsemi
Description: TRANS NPN 40V 3A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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TIP31ATU TIP31_A_B_C%2C%20TIP32_A_B_C.pdf
TIP31ATU
Hersteller: onsemi
Description: TRANS NPN 60V 3A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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74ACT74SC DS_261_74ACT74.pdf
74ACT74SC
Hersteller: onsemi
Description: IC FF D-TYPE DOUBLE 1BIT 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 20 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 210 MHz
Input Capacitance: 4.5 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Number of Bits per Element: 1
Produkt ist nicht verfügbar
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74ACT74SJ DS_261_74ACT74.pdf
74ACT74SJ
Hersteller: onsemi
Description: IC FF D-TYPE DOUBLE 1BIT 14-SOP
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 20 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 210 MHz
Input Capacitance: 4.5 pF
Supplier Device Package: 14-SOP
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Number of Bits per Element: 1
Produkt ist nicht verfügbar
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74ACT74SJX DS_261_74ACT74.pdf
74ACT74SJX
Hersteller: onsemi
Description: IC FF D-TYPE DOUBLE 1BIT 14-SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 20 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 210 MHz
Input Capacitance: 4.5 pF
Supplier Device Package: 14-SOP
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Number of Bits per Element: 1
Produkt ist nicht verfügbar
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1.5KE12ARL4G ONSMS21119-1.pdf?t.download=true&u=5oefqw
1.5KE12ARL4G
Hersteller: onsemi
Description: TVS DIODE 10.2VWM 16.7VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 90A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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Lieferzeit 10-14 Tag (e)
AnzahlPreis
865+0.53 EUR
Mindestbestellmenge: 865 Stücke
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TIP122 TIP120-22.pdf
TIP122
Hersteller: onsemi
Description: TRANS NPN DARL 100V 5A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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KSC2328AOBU ksc2328a-d.pdf
KSC2328AOBU
Hersteller: onsemi
Description: TRANS NPN 30V 2A TO-92-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-92-3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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UJ3D1725K2 UJ3D1725K2-D.PDF
UJ3D1725K2
Hersteller: onsemi
Description: DIODE SIL CARB 1700V 25A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1500pF @ 1V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Current - Reverse Leakage @ Vr: 360 µA @ 1700 V
Qualification: AEC-Q101
auf Bestellung 39527 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+31.1 EUR
30+19.61 EUR
120+17.76 EUR
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UJ3D1250K2 da008695
UJ3D1250K2
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 50A TO2472
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 50A
Capacitance @ Vr, F: 2340pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
auf Bestellung 14605 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+39.35 EUR
30+30.79 EUR
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UJ3D1205TS UJ3D1205TS-D.PDF
UJ3D1205TS
Hersteller: onsemi
Description: DIODE SIL CARBIDE 1200V 5A TO220
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 55 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
auf Bestellung 20381 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+8.94 EUR
50+4.71 EUR
100+4.3 EUR
500+3.59 EUR
1000+3.46 EUR
Mindestbestellmenge: 2 Stücke
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UJ3D06560KSD UJ3D06560KSD-D.PDF
UJ3D06560KSD
Hersteller: onsemi
Description: DIODE SIL CARB 650V 30A TO247-3
Current - Reverse Leakage @ Vr: 740 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 1980pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 6042 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+24.89 EUR
30+16.39 EUR
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UJ3D1250K da008694
UJ3D1250K
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 50A TO2473
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 50A
Capacitance @ Vr, F: 2340pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 6397 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+39.35 EUR
30+30.79 EUR
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UJ3D1202TS UJ3D1202TS-D.PDF
UJ3D1202TS
Hersteller: onsemi
Description: DIODE SIL CARBIDE 1200V 2A TO220
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 109pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 22 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
auf Bestellung 6499 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.02 EUR
50+3.06 EUR
100+2.78 EUR
500+2.28 EUR
1000+2.11 EUR
2000+2.03 EUR
Mindestbestellmenge: 3 Stücke
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UJ3D06506TS DS_UJ3D06506TS.pdf
UJ3D06506TS
Hersteller: onsemi
Description: DIODE SIL CARB 650V 6A TO220-2
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 196pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 57301 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.06 EUR
25+2.67 EUR
100+2.3 EUR
250+2.11 EUR
500+1.98 EUR
1000+1.9 EUR
Mindestbestellmenge: 6 Stücke
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UJ3D06508TS DS_UJ3D06508TS.pdf
UJ3D06508TS
Hersteller: onsemi
Description: DIODE SIL CARB 650V 8A TO220-2
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 28073 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.59 EUR
25+3.12 EUR
100+2.7 EUR
250+2.48 EUR
500+2.31 EUR
1000+2.24 EUR
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UJ3D06510TS DS_UJ3D06510TS.pdf
UJ3D06510TS
Hersteller: onsemi
Description: DIODE SIL CARB 650V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 327pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
auf Bestellung 11657 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+4.08 EUR
25+3.55 EUR
100+3.06 EUR
250+2.82 EUR
500+2.63 EUR
1000+2.53 EUR
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UJ3D06520TS DS_UJ3D06520TS.pdf
UJ3D06520TS
Hersteller: onsemi
Description: DIODE SIL CARB 650V 20A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 654pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
auf Bestellung 6004 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+7 EUR
25+6.1 EUR
100+5.25 EUR
250+4.85 EUR
500+4.51 EUR
1000+4.35 EUR
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UJ3D1210TS UJ3D1210TS-D.PDF
UJ3D1210TS
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 10A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 510pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
auf Bestellung 9913 Stücke:
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AnzahlPreis
2+10.7 EUR
50+5.84 EUR
100+5.49 EUR
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UJ3D1220KSD UJ3D1220KSD-D.PDF
UJ3D1220KSD
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 10A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1020pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 220 µA @ 1200 V
auf Bestellung 773 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+22.16 EUR
30+13.55 EUR
120+11.66 EUR
510+11.44 EUR
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UJ3D06504TS DS_UJ3D06504TS.pdf
UJ3D06504TS
Hersteller: onsemi
Description: DIODE SIL CARB 650V 4A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 118pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 22758 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.38 EUR
25+2.08 EUR
100+1.79 EUR
250+1.64 EUR
500+1.54 EUR
1000+1.48 EUR
Mindestbestellmenge: 8 Stücke
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UJ3D06512TS DS_UJ3D06512TS.pdf
UJ3D06512TS
Hersteller: onsemi
Description: DIODE SIL CARB 650V 12A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
auf Bestellung 10601 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.71 EUR
50+4.3 EUR
100+4.15 EUR
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UJ3D06516TS DS_UJ3D06516TS.pdf
UJ3D06516TS
Hersteller: onsemi
Description: DIODE SIL CARB 650V 16A TO220-2
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 938 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.09 EUR
25+5.3 EUR
100+4.58 EUR
250+4.2 EUR
500+3.92 EUR
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UJ3D1210K2 UJ3D1210K2-D.PDF
UJ3D1210K2
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 10A TO2472
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 510pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
auf Bestellung 6415 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+11.16 EUR
30+6.53 EUR
120+5.79 EUR
Mindestbestellmenge: 2 Stücke
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UJ3D06530TS DS_UJ3D06530TS.pdf
UJ3D06530TS
Hersteller: onsemi
Description: DIODE SIL CARB 650V 30A TO220-2
Current - Reverse Leakage @ Vr: 370 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 990pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
auf Bestellung 7715 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+10.23 EUR
25+8.9 EUR
100+7.68 EUR
250+7.07 EUR
500+6.59 EUR
1000+6.35 EUR
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UJ3D1220K2 da008692
UJ3D1220K2
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 20A TO2472
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 190 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 810pF @ 1V, 1MHz
auf Bestellung 297 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+13.27 EUR
25+11.53 EUR
100+9.96 EUR
250+9.17 EUR
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UJ3D06520KSD UJ3D06520KSD-D.PDF
UJ3D06520KSD
Hersteller: onsemi
Description: DIODE SIL CARB 650V 10A TO247-3
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 654pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
auf Bestellung 7418 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+13.89 EUR
30+7.63 EUR
120+6.9 EUR
510+6.22 EUR
Mindestbestellmenge: 2 Stücke
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UJ3D1210KSD UJ3D1210KSD-D.PDF
UJ3D1210KSD
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 5A TO2473
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 98 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+14.77 EUR
30+8.71 EUR
Mindestbestellmenge: 2 Stücke
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UJ3D1210KS UJ3D1210KS-D.PDF
UJ3D1210KS
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 10A TO2473
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 510pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+13.66 EUR
10+10.09 EUR
100+8.74 EUR
600+6.6 EUR
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NBXDBA009LNHTAG
NBXDBA009LNHTAG
Hersteller: onsemi
Description: IC OSC XTAL DUAL FREQ 6CLCC
Current - Supply: 79 mA
Supplier Device Package: 6-CLCC (7x5)
Voltage - Supply: 2.97V ~ 3.63V
Operating Temperature: -40°C ~ 85°C
Type: Oscillator, Crystal
Frequency: 75MHz, 150MHz
Mounting Type: Surface Mount
Package / Case: 6-CLCC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MM74HC4316M MM74HC4316.pdf
MM74HC4316M
Hersteller: onsemi
Description: IC SWITCH SPST-NOX4 70OHM 16SOIC
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 100nA
Switch Time (Ton, Toff) (Max): 14ns, 20ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -50dB @ 1MHz
Voltage - Supply, Dual (V±): ±2V ~ 6V
Voltage - Supply, Single (V+): 2V ~ 12V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 100MHz
On-State Resistance (Max): 70Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Produkt ist nicht verfügbar
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FAN5776UCX fan5776-d.pdf
FAN5776UCX
Hersteller: onsemi
Description: IC LED DRV RGLTR PWM 12WLCSP
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 2.3V
Dimming: PWM
Supplier Device Package: 12-WLCSP (1.42x1.66)
Topology: Step-Up (Boost)
Internal Switch(s): Yes
Current - Output / Channel: 25mA
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
Type: DC DC Regulator
Frequency: 1.8MHz
Number of Outputs: 5
Mounting Type: Surface Mount
Voltage - Output: 3.5V ~ 8.5V
Package / Case: 12-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FAN5776UCX fan5776-d.pdf
FAN5776UCX
Hersteller: onsemi
Description: IC LED DRV RGLTR PWM 12WLCSP
Internal Switch(s): Yes
Current - Output / Channel: 25mA
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
Type: DC DC Regulator
Frequency: 1.8MHz
Number of Outputs: 5
Mounting Type: Surface Mount
Voltage - Output: 3.5V ~ 8.5V
Package / Case: 12-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 2.3V
Dimming: PWM
Supplier Device Package: 12-WLCSP (1.42x1.66)
Topology: Step-Up (Boost)
Produkt ist nicht verfügbar
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HT8822N
Hersteller: onsemi
Description: IC PWR CONV TBD 8-MDIP
Packaging: Tube
Produkt ist nicht verfügbar
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MC33164P-5RAG mc34164-d.pdf
MC33164P-5RAG
Hersteller: onsemi
Description: IC SUPERVISOR 1 CHANNEL TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4.33V
Supplier Device Package: TO-92 (TO-226)
DigiKey Programmable: Not Verified
auf Bestellung 8708 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
975+0.52 EUR
Mindestbestellmenge: 975 Stücke
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74VHC112M ONSM-S-A0003546545-1.pdf?t.download=true&u=5oefqw
74VHC112M
Hersteller: onsemi
Description: IC FF JK TYPE DUAL 1BIT 16SOIC
Number of Bits per Element: 1
Max Propagation Delay @ V, Max CL: 10.5ns @ 5V, 50pF
Supplier Device Package: 16-SOIC
Input Capacitance: 4 pF
Clock Frequency: 185 MHz
Trigger Type: Negative Edge
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Iq): 2 µA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: JK Type
Function: Set(Preset) and Reset
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Complementary
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
auf Bestellung 132480 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
457+1.11 EUR
Mindestbestellmenge: 457 Stücke
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74VHC112M ONSM-S-A0003546545-1.pdf?t.download=true&u=5oefqw
74VHC112M
Hersteller: onsemi
Description: IC FF JK TYPE DUAL 1BIT 16SOIC
Number of Bits per Element: 1
Max Propagation Delay @ V, Max CL: 10.5ns @ 5V, 50pF
Supplier Device Package: 16-SOIC
Input Capacitance: 4 pF
Clock Frequency: 185 MHz
Trigger Type: Negative Edge
Current - Output High, Low: 8mA, 8mA
Current - Quiescent (Iq): 2 µA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: JK Type
Function: Set(Preset) and Reset
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Complementary
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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UF3C170400B7S UF3C170400B7S-D.PDF
UF3C170400B7S
Hersteller: onsemi
Description: SICFET N-CH 1700V 7.6A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 734 pF @ 1200 V
Produkt ist nicht verfügbar
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UF3C170400B7S UF3C170400B7S-D.PDF
UF3C170400B7S
Hersteller: onsemi
Description: SICFET N-CH 1700V 7.6A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 734 pF @ 1200 V
auf Bestellung 101 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+17.16 EUR
10+11.85 EUR
100+9.2 EUR
Mindestbestellmenge: 2 Stücke
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UJ4C075060K3S uj4c075060k3s-d.pdf
UJ4C075060K3S
Hersteller: onsemi
Description: SICFET N-CH 750V 28A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V
auf Bestellung 14453 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+20.77 EUR
30+13.15 EUR
120+12.34 EUR
510+10.31 EUR
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UJ4C075060K4S UJ4C075060K4S-D.PDF
UJ4C075060K4S
Hersteller: onsemi
Description: SICFET N-CH 750V 28A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V
auf Bestellung 372 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+20.29 EUR
30+12.31 EUR
120+10.56 EUR
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