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MC33275DT-2.5G MC33275DT-2.5G onsemi mc33275-d.pdf Description: IC REG LINEAR 2.5V 300MA DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 13V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 2.5V
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 3753 Stücke:
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433+0.97 EUR
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7WB3305AMX1TCG 7WB3305AMX1TCG onsemi 7wb3305-d.pdf Description: IC BUS SWITCH 1 X 1:1 8ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.95x1)
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MC74HC32ADG-Q MC74HC32ADG-Q onsemi mc74hc32a-d.pdf Description: QUAD OR GATE
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
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36+0.49 EUR
55+0.4 EUR
110+0.38 EUR
275+0.35 EUR
550+0.34 EUR
1045+0.32 EUR
2530+0.31 EUR
5005+0.3 EUR
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NVMFS5C410NLAFT1G-YE NVMFS5C410NLAFT1G-YE onsemi NVMFS5C410NL-D.PDF Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FSB50250AP FSB50250AP onsemi fsb50250a-d.pdf Description: SPM5 V2 INV 500V 3.8OHM
Packaging: Tube
auf Bestellung 20250 Stücke:
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10+9.22 EUR
270+6.12 EUR
540+5.97 EUR
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FCU3400N80Z FCU3400N80Z onsemi fcu3400n80z-d.pdf Description: MOSFET N-CH 800V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 100 V
Produkt ist nicht verfügbar
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TIP42B TIP42B onsemi tip42c-d.pdf Description: TRANS PNP 80V 6A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
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BZX79C47 BZX79C47 onsemi ONSM-S-A0003579732-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 47V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 32.9 V
Produkt ist nicht verfügbar
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MT9P006I12STCU-DP1 onsemi mt9p006?pdf= Description: SENSOR IMAGE VGA 5MP CMOS 48LCC
Packaging: Tray
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Frames per Second: 60.0
Produkt ist nicht verfügbar
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MT9P006I12STCUH-GEVB MT9P006I12STCUH-GEVB onsemi mt9p006?pdf= Description: BOARD EVAL 5 MP 1/2.5" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: MT9P006
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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KA3524 KA3524 onsemi KA3524.pdf Description: IC REG CTRLR MULT TOPOLOGY 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor Driver
Mounting Type: Through Hole
Function: Step-Down, Step-Up/Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: 350kHz
Topology: Buck, Flyback, Push-Pull
Voltage - Supply (Vcc/Vdd): 8V ~ 40V
Supplier Device Package: 16-PDIP
Synchronous Rectifier: No
Control Features: Enable
Output Phases: 1
Duty Cycle (Max): 45%
Clock Sync: No
Number of Outputs: 1
Produkt ist nicht verfügbar
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HUFA76639P3 HUFA76639P3 onsemi HUFA76639P3%2C%20HUFA76639S3S.pdf Description: MOSFET N-CH 100V 51A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
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NCP303160AMNTWG onsemi NCP303160A-D.PDF Description: INTEGRATED DRIVER AND MOSFET WIT
Packaging: Bulk
Features: Bootstrap Circuit
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Current - Peak Output: 80A
Technology: NMOS
Voltage - Load: 4.5V ~ 20V
Supplier Device Package: 39-PQFN (5x6)
Fault Protection: Over Temperature, UVLO
Load Type: Inductive, Capacitive
Produkt ist nicht verfügbar
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NCV4269AD250R2G NCV4269AD250R2G onsemi ncv4269a-d.pdf Description: IC REG LINEAR 5V 150MA 14-SOIC
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 250 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 14-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 3 mA
Qualification: AEC-Q100
Packaging: Cut Tape (CT)
auf Bestellung 362365 Stücke:
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8+2.5 EUR
10+1.83 EUR
25+1.66 EUR
100+1.48 EUR
250+1.39 EUR
500+1.34 EUR
1000+1.29 EUR
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NCV4269ADW50G NCV4269ADW50G onsemi ncv4269a-d.pdf Description: IC REG LINEAR 5V 150MA 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 250 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 20-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 3 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NCV4269D1R2G NCV4269D1R2G onsemi ncv4269-d.pdf Description: IC REG LINEAR 5V 150MA 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 250 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 3 mA
Qualification: AEC-Q100
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NCV4269D1R2G NCV4269D1R2G onsemi ncv4269-d.pdf Description: IC REG LINEAR 5V 150MA 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 250 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 3 mA
Qualification: AEC-Q100
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NCV4269D2R2G NCV4269D2R2G onsemi ncv4269-d.pdf Description: IC REG LINEAR 5V 150MA 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 250 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 14-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 3 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NCV4269DWR2G NCV4269DWR2G onsemi ncv4269-d.pdf Description: IC REG LINEAR 5V 150MA 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 250 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 20-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 3 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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P3P23F01EG-08TR onsemi Description: 2-130MHZ 2.5V/3.3V GP EMI
Packaging: Bulk
auf Bestellung 30000 Stücke:
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ADT7483AARQZ-R7 ADT7483AARQZ-R7 onsemi adt7483a-d.pdf Description: SENSOR DIGITAL 0C-127C 16QSOP
Features: One-Shot, Output Switch, Programmable Limit, Standby Mode
Packaging: Bulk
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Output Type: SMBus
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Digital, Local/Remote
Supplier Device Package: 16-QSOP
Test Condition: 0°C ~ 70°C (-40°C ~ 100°C)
Accuracy - Highest (Lowest): ±1°C (±2.5°C)
Sensing Temperature - Local: 0°C ~ 127°C
Sensing Temperature - Remote: -64°C ~ 191°C
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FQI11N40TU onsemi FQB11N40.pdf Description: MOSFET N-CH 400V 11.4A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 5.7A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Produkt ist nicht verfügbar
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FAN4147SX FAN4147SX onsemi fan4147-d.pdf Description: IC CTLR LOW PWR AC GFI 6-SSOT
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -35°C ~ 85°C
Applications: Ground Fault Protection
Current - Supply: 400µA
Supplier Device Package: SuperSOT™-6
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FDG327NZ FDG327NZ onsemi fdg327nz-d.pdf Description: MOSFET N-CH 20V 1.5A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 412 pF @ 10 V
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FDG327NZ FDG327NZ onsemi fdg327nz-d.pdf Description: MOSFET N-CH 20V 1.5A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 412 pF @ 10 V
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BZX85C36 BZX85C36 onsemi BZX85C3V3-C56.pdf Description: DIODE ZENER 36V 1W DO41
Tolerance: ±6%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Produkt ist nicht verfügbar
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NSR20406NXT5G onsemi NSR20406-D.PDF Description: DIODE SCHOTTKY 40V 2A 2DSN
Packaging: Bulk
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 53 ns
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 2V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: 2-DSN (1.6x0.8)
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Produkt ist nicht verfügbar
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NRVTS12120EMFST1G NRVTS12120EMFST1G onsemi nts12120emfs-d.pdf Description: DIODE SCHOTTKY 120V 12A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 55 µA @ 120 V
Qualification: AEC-Q101
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NRVTS12120EMFST1G NRVTS12120EMFST1G onsemi nts12120emfs-d.pdf Description: DIODE SCHOTTKY 120V 12A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 55 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 1490 Stücke:
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9+2.18 EUR
13+1.46 EUR
100+1.02 EUR
500+0.83 EUR
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FQU3N40TU FQU3N40TU onsemi FQD3N40%2C%20FQU3N40.pdf Description: MOSFET N-CH 400V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
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FQD3N40TF FQD3N40TF onsemi FAIRS17803-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 400V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
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MMDF3N02HDR2 MMDF3N02HDR2 onsemi mmdf3n02hd-d.pdf Description: MOSFET N-CH 20V 3.8A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 16 V
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NTH4LN041N60S5H onsemi NTH4LN041N60S5H-D.PDF Description: MOSFETPOWER, SINGLE, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 28.5A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.7mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6213 pF @ 400 V
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MCH4016-TL-H MCH4016-TL-H onsemi mch4016-d.pdf Description: RF TRANS NPN 12V 10GHZ 4-MCPH
Packaging: Bulk
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18dB
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: 4-MCPH
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TIP50 TIP50 onsemi tip47-d.pdf Description: TRANS NPN 400V 1A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
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2SD1624S-TD-H 2SD1624S-TD-H onsemi en2019-d.pdf Description: TRANS NPN 50V 3A PCP
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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MC74VHC257DTG MC74VHC257DTG onsemi mc74vhc257-d.pdf Description: IC MULTIPLEXER 4 X 2:1 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
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FAN7392N FAN7392N onsemi fan7392-d.pdf Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-MDIP
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 4.5V, 9.5V
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
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1N4002G 1N4002G onsemi 1n4001-d.pdf Description: DIODE STANDARD 100V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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NSVBCP5316MTWG NSVBCP5316MTWG onsemi bcp53m-d.pdf Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
Qualification: AEC-Q101
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BCP5316MTWG BCP5316MTWG onsemi bcp53m-d.pdf Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
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1N4006G 1N4006G onsemi 1n4001-d.pdf Description: DIODE STANDARD 800V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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NVD5890NT4G-VF01 NVD5890NT4G-VF01 onsemi NVD5890N-D.PDF Description: POWER MOSFET 40V, 123A, 3.7 MOHM
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
Qualification: AEC-Q101
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NVD5805NT4G-VF01 NVD5805NT4G-VF01 onsemi NTD5805N-D.PDF Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
Qualification: AEC-Q101
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SVD5867NLT4G-UM SVD5867NLT4G-UM onsemi NVD5867NL-D.PDF Description: SINGLE N-CHANNEL POWER MOSFET 60
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V
Power Dissipation (Max): 3.3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V
Qualification: AEC-Q101
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FDU5N50NZTU onsemi fdu5n50nztu-d.pdf Description: MOSFET N-CH 500V 4A DPAK3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK3 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
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NRVBA320NT3G NRVBA320NT3G onsemi mbra320-d.pdf Description: DIODE SCHOTTKY 20V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Qualification: AEC-Q101
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NRVBA320NT3G NRVBA320NT3G onsemi mbra320-d.pdf Description: DIODE SCHOTTKY 20V 3A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Qualification: AEC-Q101
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1N4001G 1N4001G onsemi 1n4001-d.pdf Description: DIODE STANDARD 50V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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1N4005G 1N4005G onsemi 1n4001-d.pdf Description: DIODE STANDARD 600V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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NVMFS5C404NLWFET3G NVMFS5C404NLWFET3G onsemi NVMFS5C404NL-D.PDF Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Qualification: AEC-Q101
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NVBG023N065M3S onsemi Description: SIC MOS D2PAK-7L 23MOHM 650V M3S
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V
Qualification: AEC-Q101
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NVBG023N065M3S onsemi Description: SIC MOS D2PAK-7L 23MOHM 650V M3S
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V
Qualification: AEC-Q101
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NXH010P90MNF1PTG NXH010P90MNF1PTG onsemi nxh010p90mnf1-d.pdf Description: MOSFET 2N-CH 900V 154A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 328W (Tj)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7007pF @ 450V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 546.4nC @ 15V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
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NXH010P120MNF1PTG NXH010P120MNF1PTG onsemi nxh010p120mnf1-d.pdf Description: MOSFET 2N-CH 1200V 114A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 250W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
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TN6714A TN6714A onsemi tn6714a-d.pdf Description: TRANS NPN 30V 2A TO226-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Supplier Device Package: TO-226-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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NVMJS1D7N04CTWG NVMJS1D7N04CTWG onsemi nvmjs1d7n04c-d.pdf Description: MOSFET N-CH 40V 35A/185A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMJS1D7N04CTWG NVMJS1D7N04CTWG onsemi nvmjs1d7n04c-d.pdf Description: MOSFET N-CH 40V 35A/185A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2913 Stücke:
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500+1.31 EUR
1000+1.29 EUR
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FQA13N50C FQA13N50C onsemi FQA13N50C.pdf Description: MOSFET N-CH 500V 13.5A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.75A, 10V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Produkt ist nicht verfügbar
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MB6S MB6S onsemi MB8S-D.PDF Description: BRIDGE RECT 1P 600V 500MA 4-SOIC
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 8073000 Stücke:
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3000+0.26 EUR
6000+0.24 EUR
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15000+0.22 EUR
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MC33275DT-2.5G mc33275-d.pdf
MC33275DT-2.5G
Hersteller: onsemi
Description: IC REG LINEAR 2.5V 300MA DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 13V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 2.5V
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 3753 Stücke:
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433+0.97 EUR
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7WB3305AMX1TCG 7wb3305-d.pdf
7WB3305AMX1TCG
Hersteller: onsemi
Description: IC BUS SWITCH 1 X 1:1 8ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.95x1)
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1480+0.33 EUR
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MC74HC32ADG-Q mc74hc32a-d.pdf
MC74HC32ADG-Q
Hersteller: onsemi
Description: QUAD OR GATE
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
auf Bestellung 61985 Stücke:
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Anzahl Preis
25+0.7 EUR
36+0.49 EUR
55+0.4 EUR
110+0.38 EUR
275+0.35 EUR
550+0.34 EUR
1045+0.32 EUR
2530+0.31 EUR
5005+0.3 EUR
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NVMFS5C410NLAFT1G-YE NVMFS5C410NL-D.PDF
NVMFS5C410NLAFT1G-YE
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FSB50250AP fsb50250a-d.pdf
FSB50250AP
Hersteller: onsemi
Description: SPM5 V2 INV 500V 3.8OHM
Packaging: Tube
auf Bestellung 20250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.48 EUR
10+9.22 EUR
270+6.12 EUR
540+5.97 EUR
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FCU3400N80Z fcu3400n80z-d.pdf
FCU3400N80Z
Hersteller: onsemi
Description: MOSFET N-CH 800V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 100 V
Produkt ist nicht verfügbar
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TIP42B tip42c-d.pdf
TIP42B
Hersteller: onsemi
Description: TRANS PNP 80V 6A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
auf Bestellung 13446 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
466+0.97 EUR
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BZX79C47 ONSM-S-A0003579732-1.pdf?t.download=true&u=5oefqw
BZX79C47
Hersteller: onsemi
Description: DIODE ZENER 47V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 32.9 V
Produkt ist nicht verfügbar
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MT9P006I12STCU-DP1 mt9p006?pdf=
Hersteller: onsemi
Description: SENSOR IMAGE VGA 5MP CMOS 48LCC
Packaging: Tray
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Frames per Second: 60.0
Produkt ist nicht verfügbar
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MT9P006I12STCUH-GEVB mt9p006?pdf=
MT9P006I12STCUH-GEVB
Hersteller: onsemi
Description: BOARD EVAL 5 MP 1/2.5" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: MT9P006
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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KA3524 KA3524.pdf
KA3524
Hersteller: onsemi
Description: IC REG CTRLR MULT TOPOLOGY 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor Driver
Mounting Type: Through Hole
Function: Step-Down, Step-Up/Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: 350kHz
Topology: Buck, Flyback, Push-Pull
Voltage - Supply (Vcc/Vdd): 8V ~ 40V
Supplier Device Package: 16-PDIP
Synchronous Rectifier: No
Control Features: Enable
Output Phases: 1
Duty Cycle (Max): 45%
Clock Sync: No
Number of Outputs: 1
Produkt ist nicht verfügbar
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HUFA76639P3 HUFA76639P3%2C%20HUFA76639S3S.pdf
HUFA76639P3
Hersteller: onsemi
Description: MOSFET N-CH 100V 51A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
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NCP303160AMNTWG NCP303160A-D.PDF
Hersteller: onsemi
Description: INTEGRATED DRIVER AND MOSFET WIT
Packaging: Bulk
Features: Bootstrap Circuit
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Current - Peak Output: 80A
Technology: NMOS
Voltage - Load: 4.5V ~ 20V
Supplier Device Package: 39-PQFN (5x6)
Fault Protection: Over Temperature, UVLO
Load Type: Inductive, Capacitive
Produkt ist nicht verfügbar
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NCV4269AD250R2G ncv4269a-d.pdf
NCV4269AD250R2G
Hersteller: onsemi
Description: IC REG LINEAR 5V 150MA 14-SOIC
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 250 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 14-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 3 mA
Qualification: AEC-Q100
Packaging: Cut Tape (CT)
auf Bestellung 362365 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.5 EUR
10+1.83 EUR
25+1.66 EUR
100+1.48 EUR
250+1.39 EUR
500+1.34 EUR
1000+1.29 EUR
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NCV4269ADW50G ncv4269a-d.pdf
NCV4269ADW50G
Hersteller: onsemi
Description: IC REG LINEAR 5V 150MA 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 250 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 20-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 3 mA
Qualification: AEC-Q100
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NCV4269D1R2G ncv4269-d.pdf
NCV4269D1R2G
Hersteller: onsemi
Description: IC REG LINEAR 5V 150MA 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 250 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 3 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NCV4269D1R2G ncv4269-d.pdf
NCV4269D1R2G
Hersteller: onsemi
Description: IC REG LINEAR 5V 150MA 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 250 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 3 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NCV4269D2R2G ncv4269-d.pdf
NCV4269D2R2G
Hersteller: onsemi
Description: IC REG LINEAR 5V 150MA 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 250 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 14-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 3 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NCV4269DWR2G ncv4269-d.pdf
NCV4269DWR2G
Hersteller: onsemi
Description: IC REG LINEAR 5V 150MA 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 250 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 20-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 3 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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P3P23F01EG-08TR
Hersteller: onsemi
Description: 2-130MHZ 2.5V/3.3V GP EMI
Packaging: Bulk
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
430+1.15 EUR
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ADT7483AARQZ-R7 adt7483a-d.pdf
ADT7483AARQZ-R7
Hersteller: onsemi
Description: SENSOR DIGITAL 0C-127C 16QSOP
Features: One-Shot, Output Switch, Programmable Limit, Standby Mode
Packaging: Bulk
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Output Type: SMBus
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Digital, Local/Remote
Supplier Device Package: 16-QSOP
Test Condition: 0°C ~ 70°C (-40°C ~ 100°C)
Accuracy - Highest (Lowest): ±1°C (±2.5°C)
Sensing Temperature - Local: 0°C ~ 127°C
Sensing Temperature - Remote: -64°C ~ 191°C
auf Bestellung 11841 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
75+6.63 EUR
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FQI11N40TU FQB11N40.pdf
Hersteller: onsemi
Description: MOSFET N-CH 400V 11.4A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 5.7A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Produkt ist nicht verfügbar
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FAN4147SX fan4147-d.pdf
FAN4147SX
Hersteller: onsemi
Description: IC CTLR LOW PWR AC GFI 6-SSOT
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -35°C ~ 85°C
Applications: Ground Fault Protection
Current - Supply: 400µA
Supplier Device Package: SuperSOT™-6
auf Bestellung 62394 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
669+0.75 EUR
Mindestbestellmenge: 669
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FDG327NZ fdg327nz-d.pdf
FDG327NZ
Hersteller: onsemi
Description: MOSFET N-CH 20V 1.5A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 412 pF @ 10 V
Produkt ist nicht verfügbar
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FDG327NZ fdg327nz-d.pdf
FDG327NZ
Hersteller: onsemi
Description: MOSFET N-CH 20V 1.5A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 412 pF @ 10 V
Produkt ist nicht verfügbar
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BZX85C36 BZX85C3V3-C56.pdf
BZX85C36
Hersteller: onsemi
Description: DIODE ZENER 36V 1W DO41
Tolerance: ±6%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Produkt ist nicht verfügbar
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NSR20406NXT5G NSR20406-D.PDF
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 2A 2DSN
Packaging: Bulk
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 53 ns
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 2V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: 2-DSN (1.6x0.8)
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Produkt ist nicht verfügbar
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NRVTS12120EMFST1G nts12120emfs-d.pdf
NRVTS12120EMFST1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 120V 12A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 55 µA @ 120 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NRVTS12120EMFST1G nts12120emfs-d.pdf
NRVTS12120EMFST1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 120V 12A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 55 µA @ 120 V
Qualification: AEC-Q101
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.18 EUR
13+1.46 EUR
100+1.02 EUR
500+0.83 EUR
Mindestbestellmenge: 9
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FQU3N40TU FQD3N40%2C%20FQU3N40.pdf
FQU3N40TU
Hersteller: onsemi
Description: MOSFET N-CH 400V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Produkt ist nicht verfügbar
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FQD3N40TF FAIRS17803-1.pdf?t.download=true&u=5oefqw
FQD3N40TF
Hersteller: onsemi
Description: MOSFET N-CH 400V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Produkt ist nicht verfügbar
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MMDF3N02HDR2 mmdf3n02hd-d.pdf
MMDF3N02HDR2
Hersteller: onsemi
Description: MOSFET N-CH 20V 3.8A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 16 V
auf Bestellung 16012 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
452+1.08 EUR
Mindestbestellmenge: 452
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NTH4LN041N60S5H NTH4LN041N60S5H-D.PDF
Hersteller: onsemi
Description: MOSFETPOWER, SINGLE, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 28.5A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.7mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6213 pF @ 400 V
Produkt ist nicht verfügbar
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MCH4016-TL-H mch4016-d.pdf
MCH4016-TL-H
Hersteller: onsemi
Description: RF TRANS NPN 12V 10GHZ 4-MCPH
Packaging: Bulk
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18dB
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: 4-MCPH
auf Bestellung 174000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1428+0.32 EUR
Mindestbestellmenge: 1428
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TIP50 tip47-d.pdf
TIP50
Hersteller: onsemi
Description: TRANS NPN 400V 1A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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2SD1624S-TD-H en2019-d.pdf
2SD1624S-TD-H
Hersteller: onsemi
Description: TRANS NPN 50V 3A PCP
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1016+0.46 EUR
Mindestbestellmenge: 1016
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MC74VHC257DTG mc74vhc257-d.pdf
MC74VHC257DTG
Hersteller: onsemi
Description: IC MULTIPLEXER 4 X 2:1 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
auf Bestellung 61380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1343+0.37 EUR
Mindestbestellmenge: 1343
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FAN7392N fan7392-d.pdf
FAN7392N
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-MDIP
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 4.5V, 9.5V
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
auf Bestellung 540 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.13 EUR
10+2.31 EUR
25+2.11 EUR
100+1.88 EUR
250+1.77 EUR
500+1.71 EUR
Mindestbestellmenge: 6
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1N4002G 1n4001-d.pdf
1N4002G
Hersteller: onsemi
Description: DIODE STANDARD 100V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 47552 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
117+0.15 EUR
500+0.11 EUR
1000+0.086 EUR
2000+0.076 EUR
5000+0.067 EUR
10000+0.063 EUR
Mindestbestellmenge: 63
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NSVBCP5316MTWG bcp53m-d.pdf
NSVBCP5316MTWG
Hersteller: onsemi
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BCP5316MTWG bcp53m-d.pdf
BCP5316MTWG
Hersteller: onsemi
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.2 EUR
24+0.74 EUR
100+0.48 EUR
500+0.37 EUR
1000+0.33 EUR
3000+0.28 EUR
Mindestbestellmenge: 15
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1N4006G 1n4001-d.pdf
1N4006G
Hersteller: onsemi
Description: DIODE STANDARD 800V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 7545 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
103+0.17 EUR
124+0.14 EUR
500+0.1 EUR
1000+0.081 EUR
2000+0.069 EUR
5000+0.062 EUR
Mindestbestellmenge: 67
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NVD5890NT4G-VF01 NVD5890N-D.PDF
NVD5890NT4G-VF01
Hersteller: onsemi
Description: POWER MOSFET 40V, 123A, 3.7 MOHM
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVD5805NT4G-VF01 NTD5805N-D.PDF
NVD5805NT4G-VF01
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SVD5867NLT4G-UM NVD5867NL-D.PDF
SVD5867NLT4G-UM
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 60
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V
Power Dissipation (Max): 3.3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDU5N50NZTU fdu5n50nztu-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 500V 4A DPAK3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK3 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
auf Bestellung 13509 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
620+0.79 EUR
Mindestbestellmenge: 620
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NRVBA320NT3G mbra320-d.pdf
NRVBA320NT3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 20V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NRVBA320NT3G mbra320-d.pdf
NRVBA320NT3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 20V 3A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N4001G 1n4001-d.pdf
1N4001G
Hersteller: onsemi
Description: DIODE STANDARD 50V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 25664 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
106+0.17 EUR
121+0.15 EUR
500+0.11 EUR
1000+0.076 EUR
2000+0.074 EUR
5000+0.067 EUR
10000+0.061 EUR
Mindestbestellmenge: 67
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1N4005G 1n4001-d.pdf
1N4005G
Hersteller: onsemi
Description: DIODE STANDARD 600V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 25247 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
134+0.13 EUR
500+0.092 EUR
1000+0.067 EUR
2000+0.058 EUR
5000+0.055 EUR
Mindestbestellmenge: 77
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NVMFS5C404NLWFET3G NVMFS5C404NL-D.PDF
NVMFS5C404NLWFET3G
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVBG023N065M3S
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 23MOHM 650V M3S
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVBG023N065M3S
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 23MOHM 650V M3S
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NXH010P90MNF1PTG nxh010p90mnf1-d.pdf
NXH010P90MNF1PTG
Hersteller: onsemi
Description: MOSFET 2N-CH 900V 154A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 328W (Tj)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7007pF @ 450V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 546.4nC @ 15V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
auf Bestellung 140 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+205.44 EUR
28+179.99 EUR
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NXH010P120MNF1PTG nxh010p120mnf1-d.pdf
NXH010P120MNF1PTG
Hersteller: onsemi
Description: MOSFET 2N-CH 1200V 114A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 250W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
auf Bestellung 196 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+190.56 EUR
28+164.46 EUR
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TN6714A tn6714a-d.pdf
TN6714A
Hersteller: onsemi
Description: TRANS NPN 30V 2A TO226-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Supplier Device Package: TO-226-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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NVMJS1D7N04CTWG nvmjs1d7n04c-d.pdf
NVMJS1D7N04CTWG
Hersteller: onsemi
Description: MOSFET N-CH 40V 35A/185A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMJS1D7N04CTWG nvmjs1d7n04c-d.pdf
NVMJS1D7N04CTWG
Hersteller: onsemi
Description: MOSFET N-CH 40V 35A/185A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2913 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.73 EUR
10+2.4 EUR
100+1.64 EUR
500+1.31 EUR
1000+1.29 EUR
Mindestbestellmenge: 5
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FQA13N50C FQA13N50C.pdf
FQA13N50C
Hersteller: onsemi
Description: MOSFET N-CH 500V 13.5A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.75A, 10V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Produkt ist nicht verfügbar
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MB6S MB8S-D.PDF
MB6S
Hersteller: onsemi
Description: BRIDGE RECT 1P 600V 500MA 4-SOIC
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 8073000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
6000+0.24 EUR
9000+0.23 EUR
15000+0.22 EUR
21000+0.21 EUR
30000+0.2 EUR
Mindestbestellmenge: 3000
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