Foto | Bezeichnung | Hersteller | Beschreibung |
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MM3Z6V8T1 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-323 Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 4 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MM3Z6V8T1 | onsemi |
![]() Packaging: Bulk Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-323 Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 4 V |
auf Bestellung 113300 Stücke: Lieferzeit 10-14 Tag (e) |
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MM5Z6V8T5G | onsemi |
![]() Packaging: Tape & Reel (TR) Tolerance: ±5.88% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-523 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 4 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBR4045PT | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-247AD (TO-3P) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 20 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
auf Bestellung 1975 Stücke: Lieferzeit 10-14 Tag (e) |
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MBR4045PT | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-247AD (TO-3P) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 20 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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4N35SR2 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 300mV Supplier Device Package: 6-DIP Gull Wing Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 10µs, 9µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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4N35SR2 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 300mV Supplier Device Package: 6-DIP Gull Wing Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 10µs, 9µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 954 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC3020DC-P | onsemi |
Description: MOSFET N-CH 30V 17A/40A DLCOOL33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 6.25mOhm @ 12A, 10V Power Dissipation (Max): 3W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V |
Produkt ist nicht verfügbar |
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NVTFWS005N08XLTAG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 17A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 85µA Supplier Device Package: 8-WDFNW (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NVTFWS005N08XLTAG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 17A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 85µA Supplier Device Package: 8-WDFNW (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NVTFWS005N08XLTAG | onsemi |
![]() Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 17A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 85µA Supplier Device Package: 8-WDFNW (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NTMFS3D5N08XT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 135A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 31A, 10V Power Dissipation (Max): 119W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 153µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2680 pF @ 40 V |
auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS3D5N08XT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 135A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 31A, 10V Power Dissipation (Max): 119W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 153µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2680 pF @ 40 V |
auf Bestellung 48707 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP1343PD100WGEVB | onsemi |
![]() Packaging: Box Function: USB Type-C Power Delivery (PD) Type: Power Management Contents: Board(s) Utilized IC / Part: NCP1343 Embedded: No |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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SZ1SMB22AT3G | onsemi |
![]() Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Capacitance @ Frequency: 730pF @ 1MHz Current - Peak Pulse (10/1000µs): 16.9A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 24.4V Voltage - Clamping (Max) @ Ipp: 35.5V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 144333 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBCP53MTWG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: 3-WDFNW (2x2) Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 875 mW Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBCP53MTWG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: 3-WDFNW (2x2) Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 875 mW Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N2484 | onsemi |
![]() Packaging: Tube Package / Case: TO-18-2 Metal Can Mounting Type: Through Hole Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 5V Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 360 mW |
Produkt ist nicht verfügbar |
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NCP2815BFCCT2G | onsemi |
![]() Features: Depop, Shutdown, Thermal Protection Packaging: Tape & Reel (TR) Package / Case: 12-UFBGA, FCBGA Output Type: 2-Channel (Stereo) Mounting Type: Surface Mount Type: Class AB Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.6V ~ 3.6V Max Output Power x Channels @ Load: 62mW x 2 @ 16Ohm Supplier Device Package: 12-FlipChip |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NCP4896FCT1G | onsemi |
![]() Features: Depop, Shutdown, Thermal Protection Packaging: Bulk Package / Case: 9-WFBGA, FCBGA Output Type: 1-Channel (Mono) with Mono Headphones Mounting Type: Surface Mount Type: Class AB Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 5.5V Max Output Power x Channels @ Load: 1.08W x 1 @ 8Ohm; 176mW x 1 @ 16Ohm Supplier Device Package: 9-FlipChip (1.45x1.45) |
auf Bestellung 1104000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP2704FCCT1G | onsemi |
![]() Features: Depop, Differential Inputs, I2C, Shutdown, Thermal Protection, Volume Control Packaging: Bulk Package / Case: 20-WFBGA, FCBGA Output Type: 1-Channel (Mono) with Stereo Headphones Mounting Type: Surface Mount Type: Class D Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 5.5V Max Output Power x Channels @ Load: 1.7W x 2 @ 4Ohm; 62mW x 2 @ 16Ohm Supplier Device Package: 20-FlipChip (2.5x2) |
auf Bestellung 103016 Stücke: Lieferzeit 10-14 Tag (e) |
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DF10S | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-SDIP Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 239600 Stücke: Lieferzeit 10-14 Tag (e) |
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DF10S | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-SDIP Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 239977 Stücke: Lieferzeit 10-14 Tag (e) |
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FHP3230IM8X | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Voltage Feedback Operating Temperature: -40°C ~ 85°C Current - Supply: 2.5mA (x2 Channels) Slew Rate: 110V/µs Gain Bandwidth Product: 60 MHz Current - Input Bias: 1.8 µA Voltage - Input Offset: 1 mV Supplier Device Package: 8-SOIC Number of Circuits: 2 Current - Output / Channel: 100 mA -3db Bandwidth: 170 MHz Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 12 V |
Produkt ist nicht verfügbar |
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FHP3230IMU8X | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Voltage Feedback Operating Temperature: -40°C ~ 85°C Current - Supply: 2.5mA (x2 Channels) Slew Rate: 110V/µs Gain Bandwidth Product: 60 MHz Current - Input Bias: 1.8 µA Voltage - Input Offset: 1 mV Supplier Device Package: 8-MSOP Number of Circuits: 2 Current - Output / Channel: 100 mA -3db Bandwidth: 170 MHz Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 12 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NTMYS029N08LHTWG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V Power Dissipation (Max): 3.5W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V |
Produkt ist nicht verfügbar |
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NTMYS029N08LHTWG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V Power Dissipation (Max): 3.5W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
STK621-043A-E | onsemi |
![]() Features: Auto Restart, Bootstrap Circuit, Status Flag Packaging: Tube Package / Case: 23-SIP, 19 Leads, Formed Leads Mounting Type: Through Hole Interface: Logic Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 12.5V ~ 17.5V Applications: AC Motors Current - Output / Channel: 20A Current - Peak Output: 40A Technology: IGBT Voltage - Load: 400V (Max) Supplier Device Package: 23-SIP Fault Protection: Current Limiting, UVLO Load Type: Inductive |
auf Bestellung 1624 Stücke: Lieferzeit 10-14 Tag (e) |
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STK621-043A-E | onsemi |
![]() Features: Auto Restart, Bootstrap Circuit, Status Flag Packaging: Tube Package / Case: 23-SIP, 19 Leads, Formed Leads Mounting Type: Through Hole Interface: Logic Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 12.5V ~ 17.5V Applications: AC Motors Current - Output / Channel: 20A Current - Peak Output: 40A Technology: IGBT Voltage - Load: 400V (Max) Supplier Device Package: 23-SIP Fault Protection: Current Limiting, UVLO Load Type: Inductive |
Produkt ist nicht verfügbar |
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CAT1025WI-30-GT3 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Simple Reset/Power-On Reset Reset: Active High/Active Low Operating Temperature: -40°C ~ 85°C Number of Voltages Monitored: 1 Reset Timeout: 130ms Minimum Voltage - Threshold: 3V Supplier Device Package: 8-SOIC DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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UC2844D | onsemi |
![]() ![]() Packaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 14-SOIC |
auf Bestellung 22157 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5404G | onsemi |
![]() Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 10709 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS002N04CLTAG-SR01 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 142A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 85W (Tc) Vgs(th) (Max) @ Id: 2V @ 90µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 25 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS002N04CLTAG-SR01 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 142A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 85W (Tc) Vgs(th) (Max) @ Id: 2V @ 90µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 25 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMYS012N10MCLTWG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V Power Dissipation (Max): 3.6W (Ta), 72W (Tc) Vgs(th) (Max) @ Id: 3V @ 77µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 8017 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMYS013N08LHTWG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V Power Dissipation (Max): 3.6W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2V @ 45µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 1088 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTYS014P04M8LTWG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 53A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V Power Dissipation (Max): 3.1W (Ta), 88W (Tc) Vgs(th) (Max) @ Id: 3V @ 420µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMYS013N08LHTWG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V Power Dissipation (Max): 3.6W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2V @ 45µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMYS013N08LHTWG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V Power Dissipation (Max): 3.6W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2V @ 45µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTYS014N08HLTWG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 10A, 10V Power Dissipation (Max): 3W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 45µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NVTYS014N08HLTWG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 10A, 10V Power Dissipation (Max): 3W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 45µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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S1AFL | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 50 V |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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NRVS1GFL | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V Qualification: AEC-Q101 |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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NRVS1GFL | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V Qualification: AEC-Q101 |
auf Bestellung 10509 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFD6H846NLWFT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W (Ta), 34W (Tc) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 2V @ 21µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFD6H846NLWFT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W (Ta), 34W (Tc) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 2V @ 21µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5700 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFD5C446NLWFT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.5W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 90µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NVMFD5C446NLWFT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.5W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 90µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 785 Stücke: Lieferzeit 10-14 Tag (e) |
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NVXK2TR40WXT | onsemi |
![]() Packaging: Tube Package / Case: 32-PowerDIP Module (1.311", 33.30mm) Mounting Type: Through Hole Configuration: 4 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 319W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1789pF @ 800V Rds On (Max) @ Id, Vgs: 59mOhm @ 35A, 20V Gate Charge (Qg) (Max) @ Vgs: 106nC @ 20V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 4.3V @ 10mA Supplier Device Package: APM32 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FMS3818KRC | onsemi |
![]() Packaging: Tray Package / Case: 48-LQFP Output Type: Current - Unbuffered Mounting Type: Surface Mount Number of Bits: 8 Data Interface: Parallel Reference Type: External, Internal Operating Temperature: 0°C ~ 70°C Voltage - Supply, Analog: 3V ~ 3.6V Voltage - Supply, Digital: 3V ~ 3.6V Settling Time: 2.5µs Supplier Device Package: 48-LQFP (7x7) Architecture: Current Steering Number of D/A Converters: 3 INL/DNL (LSB): ±0.5 (Max), ±0.5 (Max) Differential Output: No DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
NSPU3071N2T5G | onsemi |
![]() Packaging: Tape & Reel (TR) |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSPU3071N2T5G | onsemi |
![]() Packaging: Cut Tape (CT) |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX84C22 | onsemi |
![]() Tolerance: ±6% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: SOT-23-3 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZX84C22 | onsemi |
![]() Tolerance: ±6% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: SOT-23-3 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
NTSV3080CTG | onsemi |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-220 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A Current - Reverse Leakage @ Vr: 700 µA @ 80 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MC74VHC573DWR2G | onsemi |
![]() Packaging: Bulk Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 8mA, 8mA Delay Time - Propagation: 5ns Supplier Device Package: 20-SOIC |
auf Bestellung 13120 Stücke: Lieferzeit 10-14 Tag (e) |
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74VHC573SJX | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.209", 5.30mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 8mA, 8mA Delay Time - Propagation: 4.5ns Supplier Device Package: 20-SOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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74VHC573SJX | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 20-SOIC (0.209", 5.30mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 8mA, 8mA Delay Time - Propagation: 4.5ns Supplier Device Package: 20-SOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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74VHC573SJ | onsemi |
![]() Packaging: Tube Package / Case: 20-SOIC (0.209", 5.30mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 8mA, 8mA Delay Time - Propagation: 4.5ns Supplier Device Package: 20-SOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AP0200AT2L00XEGA0-DR | onsemi |
![]() Packaging: Tray Package / Case: 100-VFBGA Mounting Type: Surface Mount Function: Processor Applications: Professional Video Supplier Device Package: 100-VFBGA (7x7) |
auf Bestellung 925 Stücke: Lieferzeit 10-14 Tag (e) |
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MM3Z6V8T1 |
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Hersteller: onsemi
Description: DIODE ZENER 6.8V 200MW SOD-323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Description: DIODE ZENER 6.8V 200MW SOD-323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM3Z6V8T1 |
![]() |
Hersteller: onsemi
Description: DIODE ZENER 6.8V 200MW SOD-323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Description: DIODE ZENER 6.8V 200MW SOD-323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
auf Bestellung 113300 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
11539+ | 0.05 EUR |
MM5Z6V8T5G |
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Hersteller: onsemi
Description: DIODE ZENER 6.8V 500MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Description: DIODE ZENER 6.8V 500MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MBR4045PT |
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Hersteller: onsemi
Description: DIODE ARR SCHOTT 45V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE ARR SCHOTT 45V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
245+ | 1.90 EUR |
MBR4045PT |
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Hersteller: onsemi
Description: DIODE ARR SCHOTT 45V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE ARR SCHOTT 45V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
4N35SR2 |
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Hersteller: onsemi
Description: OPTOISO 5KV TRANS W/BASE 6DIP GW
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Supplier Device Package: 6-DIP Gull Wing
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 9µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 5KV TRANS W/BASE 6DIP GW
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Supplier Device Package: 6-DIP Gull Wing
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 9µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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4N35SR2 |
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Hersteller: onsemi
Description: OPTOISO 5KV TRANS W/BASE 6DIP GW
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Supplier Device Package: 6-DIP Gull Wing
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 9µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 5KV TRANS W/BASE 6DIP GW
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Supplier Device Package: 6-DIP Gull Wing
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 9µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 954 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 0.88 EUR |
29+ | 0.61 EUR |
100+ | 0.44 EUR |
500+ | 0.36 EUR |
FDMC3020DC-P |
Hersteller: onsemi
Description: MOSFET N-CH 30V 17A/40A DLCOOL33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V
Description: MOSFET N-CH 30V 17A/40A DLCOOL33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V
Produkt ist nicht verfügbar
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NVTFWS005N08XLTAG |
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Hersteller: onsemi
Description: T10S 80V LL NCH MOSFET U8FL HE W
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 17A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 85µA
Supplier Device Package: 8-WDFNW (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Qualification: AEC-Q101
Description: T10S 80V LL NCH MOSFET U8FL HE W
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 17A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 85µA
Supplier Device Package: 8-WDFNW (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVTFWS005N08XLTAG |
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Hersteller: onsemi
Description: T10S 80V LL NCH MOSFET U8FL HE W
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 17A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 85µA
Supplier Device Package: 8-WDFNW (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Qualification: AEC-Q101
Description: T10S 80V LL NCH MOSFET U8FL HE W
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 17A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 85µA
Supplier Device Package: 8-WDFNW (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVTFWS005N08XLTAG |
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Hersteller: onsemi
Description: T10S 80V LL NCH MOSFET U8FL HE W
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 17A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 85µA
Supplier Device Package: 8-WDFNW (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Qualification: AEC-Q101
Description: T10S 80V LL NCH MOSFET U8FL HE W
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 17A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 85µA
Supplier Device Package: 8-WDFNW (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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Stück im Wert von UAH
NTMFS3D5N08XT1G |
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Hersteller: onsemi
Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 31A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 153µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2680 pF @ 40 V
Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 31A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 153µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2680 pF @ 40 V
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 0.99 EUR |
NTMFS3D5N08XT1G |
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Hersteller: onsemi
Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 31A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 153µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2680 pF @ 40 V
Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 31A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 153µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2680 pF @ 40 V
auf Bestellung 48707 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.50 EUR |
10+ | 1.96 EUR |
100+ | 1.45 EUR |
500+ | 1.23 EUR |
NCP1343PD100WGEVB |
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Hersteller: onsemi
Description: EVAL BOARD FOR NCP1343
Packaging: Box
Function: USB Type-C Power Delivery (PD)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NCP1343
Embedded: No
Description: EVAL BOARD FOR NCP1343
Packaging: Box
Function: USB Type-C Power Delivery (PD)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NCP1343
Embedded: No
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 193.58 EUR |
SZ1SMB22AT3G |
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Hersteller: onsemi
Description: TRANS VOLTAGE SUPPRESSOR DIODE
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 730pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16.9A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS VOLTAGE SUPPRESSOR DIODE
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 730pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16.9A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 144333 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1567+ | 0.31 EUR |
NSVBCP53MTWG |
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Hersteller: onsemi
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Tape & Reel (TR)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
Qualification: AEC-Q101
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Tape & Reel (TR)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.29 EUR |
NSVBCP53MTWG |
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Hersteller: onsemi
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Cut Tape (CT)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
Qualification: AEC-Q101
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Cut Tape (CT)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 1.21 EUR |
24+ | 0.76 EUR |
100+ | 0.49 EUR |
500+ | 0.37 EUR |
1000+ | 0.34 EUR |
2N2484 |
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Hersteller: onsemi
Description: TRANS NPN 60V 0.05A TO-18
Packaging: Tube
Package / Case: TO-18-2 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 5V
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Description: TRANS NPN 60V 0.05A TO-18
Packaging: Tube
Package / Case: TO-18-2 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 5V
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP2815BFCCT2G |
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Hersteller: onsemi
Description: IC AMP AB STEREO 62MW 12FLIPCHIP
Features: Depop, Shutdown, Thermal Protection
Packaging: Tape & Reel (TR)
Package / Case: 12-UFBGA, FCBGA
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Max Output Power x Channels @ Load: 62mW x 2 @ 16Ohm
Supplier Device Package: 12-FlipChip
Description: IC AMP AB STEREO 62MW 12FLIPCHIP
Features: Depop, Shutdown, Thermal Protection
Packaging: Tape & Reel (TR)
Package / Case: 12-UFBGA, FCBGA
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Max Output Power x Channels @ Load: 62mW x 2 @ 16Ohm
Supplier Device Package: 12-FlipChip
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP4896FCT1G |
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Hersteller: onsemi
Description: IC AMP AB MONO 1.08W 9FLIPCHIP
Features: Depop, Shutdown, Thermal Protection
Packaging: Bulk
Package / Case: 9-WFBGA, FCBGA
Output Type: 1-Channel (Mono) with Mono Headphones
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 5.5V
Max Output Power x Channels @ Load: 1.08W x 1 @ 8Ohm; 176mW x 1 @ 16Ohm
Supplier Device Package: 9-FlipChip (1.45x1.45)
Description: IC AMP AB MONO 1.08W 9FLIPCHIP
Features: Depop, Shutdown, Thermal Protection
Packaging: Bulk
Package / Case: 9-WFBGA, FCBGA
Output Type: 1-Channel (Mono) with Mono Headphones
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 5.5V
Max Output Power x Channels @ Load: 1.08W x 1 @ 8Ohm; 176mW x 1 @ 16Ohm
Supplier Device Package: 9-FlipChip (1.45x1.45)
auf Bestellung 1104000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
365+ | 1.33 EUR |
NCP2704FCCT1G |
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Hersteller: onsemi
Description: IC AMP D MONO 1.7W 20FLIPCHIP
Features: Depop, Differential Inputs, I2C, Shutdown, Thermal Protection, Volume Control
Packaging: Bulk
Package / Case: 20-WFBGA, FCBGA
Output Type: 1-Channel (Mono) with Stereo Headphones
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Max Output Power x Channels @ Load: 1.7W x 2 @ 4Ohm; 62mW x 2 @ 16Ohm
Supplier Device Package: 20-FlipChip (2.5x2)
Description: IC AMP D MONO 1.7W 20FLIPCHIP
Features: Depop, Differential Inputs, I2C, Shutdown, Thermal Protection, Volume Control
Packaging: Bulk
Package / Case: 20-WFBGA, FCBGA
Output Type: 1-Channel (Mono) with Stereo Headphones
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Max Output Power x Channels @ Load: 1.7W x 2 @ 4Ohm; 62mW x 2 @ 16Ohm
Supplier Device Package: 20-FlipChip (2.5x2)
auf Bestellung 103016 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
329+ | 1.44 EUR |
DF10S |
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Hersteller: onsemi
Description: BRIDGE RECT 1P 1KV 1.5A 4-SDIP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SDIP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1P 1KV 1.5A 4-SDIP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SDIP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 239600 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 0.34 EUR |
3000+ | 0.32 EUR |
4500+ | 0.31 EUR |
15000+ | 0.30 EUR |
37500+ | 0.29 EUR |
DF10S |
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Hersteller: onsemi
Description: BRIDGE RECT 1P 1KV 1.5A 4-SDIP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SDIP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1P 1KV 1.5A 4-SDIP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SDIP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 239977 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 1.48 EUR |
20+ | 0.92 EUR |
100+ | 0.59 EUR |
500+ | 0.46 EUR |
FHP3230IM8X |
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Hersteller: onsemi
Description: IC VOLTAGE FEEDBACK 2 CIRC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.5mA (x2 Channels)
Slew Rate: 110V/µs
Gain Bandwidth Product: 60 MHz
Current - Input Bias: 1.8 µA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 100 mA
-3db Bandwidth: 170 MHz
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 12 V
Description: IC VOLTAGE FEEDBACK 2 CIRC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.5mA (x2 Channels)
Slew Rate: 110V/µs
Gain Bandwidth Product: 60 MHz
Current - Input Bias: 1.8 µA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 100 mA
-3db Bandwidth: 170 MHz
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FHP3230IMU8X |
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Hersteller: onsemi
Description: IC VOLTAGE FEEDBACK 2 CIRC 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.5mA (x2 Channels)
Slew Rate: 110V/µs
Gain Bandwidth Product: 60 MHz
Current - Input Bias: 1.8 µA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-MSOP
Number of Circuits: 2
Current - Output / Channel: 100 mA
-3db Bandwidth: 170 MHz
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 12 V
Description: IC VOLTAGE FEEDBACK 2 CIRC 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.5mA (x2 Channels)
Slew Rate: 110V/µs
Gain Bandwidth Product: 60 MHz
Current - Input Bias: 1.8 µA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-MSOP
Number of Circuits: 2
Current - Output / Channel: 100 mA
-3db Bandwidth: 170 MHz
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTMYS029N08LHTWG |
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Hersteller: onsemi
Description: T8 80V LL LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Description: T8 80V LL LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTMYS029N08LHTWG |
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Hersteller: onsemi
Description: T8 80V LL LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Description: T8 80V LL LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STK621-043A-E |
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Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 20A 23SIP
Features: Auto Restart, Bootstrap Circuit, Status Flag
Packaging: Tube
Package / Case: 23-SIP, 19 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 20A
Current - Peak Output: 40A
Technology: IGBT
Voltage - Load: 400V (Max)
Supplier Device Package: 23-SIP
Fault Protection: Current Limiting, UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRIVER 20A 23SIP
Features: Auto Restart, Bootstrap Circuit, Status Flag
Packaging: Tube
Package / Case: 23-SIP, 19 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 20A
Current - Peak Output: 40A
Technology: IGBT
Voltage - Load: 400V (Max)
Supplier Device Package: 23-SIP
Fault Protection: Current Limiting, UVLO
Load Type: Inductive
auf Bestellung 1624 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 33.34 EUR |
STK621-043A-E |
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Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 20A 23SIP
Features: Auto Restart, Bootstrap Circuit, Status Flag
Packaging: Tube
Package / Case: 23-SIP, 19 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 20A
Current - Peak Output: 40A
Technology: IGBT
Voltage - Load: 400V (Max)
Supplier Device Package: 23-SIP
Fault Protection: Current Limiting, UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRIVER 20A 23SIP
Features: Auto Restart, Bootstrap Circuit, Status Flag
Packaging: Tube
Package / Case: 23-SIP, 19 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 20A
Current - Peak Output: 40A
Technology: IGBT
Voltage - Load: 400V (Max)
Supplier Device Package: 23-SIP
Fault Protection: Current Limiting, UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CAT1025WI-30-GT3 |
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Hersteller: onsemi
Description: IC SUPERVISR CPU 2K EEPROM 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C
Number of Voltages Monitored: 1
Reset Timeout: 130ms Minimum
Voltage - Threshold: 3V
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
Description: IC SUPERVISR CPU 2K EEPROM 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C
Number of Voltages Monitored: 1
Reset Timeout: 130ms Minimum
Voltage - Threshold: 3V
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
UC2844D | ![]() |
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Hersteller: onsemi
Description: CURRENT MODE PWM CONTROLLER
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 14-SOIC
Description: CURRENT MODE PWM CONTROLLER
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 14-SOIC
auf Bestellung 22157 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
341+ | 1.36 EUR |
1N5404G |
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Hersteller: onsemi
Description: DIODE STANDARD 400V 3A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 3A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 10709 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
36+ | 0.49 EUR |
52+ | 0.34 EUR |
100+ | 0.33 EUR |
500+ | 0.21 EUR |
1000+ | 0.18 EUR |
5000+ | 0.17 EUR |
10000+ | 0.15 EUR |
NTTFS002N04CLTAG-SR01 |
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Hersteller: onsemi
Description: T6 40V SG NCH U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 142A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 85W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 25 V
Description: T6 40V SG NCH U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 142A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 85W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 0.94 EUR |
3000+ | 0.89 EUR |
NTTFS002N04CLTAG-SR01 |
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Hersteller: onsemi
Description: T6 40V SG NCH U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 142A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 85W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 25 V
Description: T6 40V SG NCH U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 142A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 85W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 3.24 EUR |
NVMYS012N10MCLTWG |
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Hersteller: onsemi
Description: PTNG 100V LL LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V
Power Dissipation (Max): 3.6W (Ta), 72W (Tc)
Vgs(th) (Max) @ Id: 3V @ 77µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 50 V
Qualification: AEC-Q101
Description: PTNG 100V LL LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V
Power Dissipation (Max): 3.6W (Ta), 72W (Tc)
Vgs(th) (Max) @ Id: 3V @ 77µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 8017 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 3.54 EUR |
10+ | 2.21 EUR |
25+ | 1.86 EUR |
100+ | 1.47 EUR |
250+ | 1.27 EUR |
500+ | 1.16 EUR |
1000+ | 1.06 EUR |
NVMYS013N08LHTWG |
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Hersteller: onsemi
Description: T8 80V LL LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Qualification: AEC-Q101
Description: T8 80V LL LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1088 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 2.13 EUR |
13+ | 1.43 EUR |
100+ | 1.00 EUR |
500+ | 0.81 EUR |
1000+ | 0.74 EUR |
NVTYS014P04M8LTWG |
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Hersteller: onsemi
Description: MV8 40V LL SINGLE PCH L
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.1W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 3V @ 420µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 25 V
Qualification: AEC-Q101
Description: MV8 40V LL SINGLE PCH L
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.1W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 3V @ 420µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 3.01 EUR |
10+ | 2.05 EUR |
100+ | 1.45 EUR |
500+ | 1.19 EUR |
1000+ | 1.10 EUR |
NTMYS013N08LHTWG |
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Hersteller: onsemi
Description: T8 80V LL LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Description: T8 80V LL LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 1.33 EUR |
NTMYS013N08LHTWG |
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Hersteller: onsemi
Description: T8 80V LL LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Description: T8 80V LL LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 3.68 EUR |
NVTYS014N08HLTWG |
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Hersteller: onsemi
Description: T8 80V N-CH LL IN LFPAK33 PACKAG
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 45µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 40 V
Qualification: AEC-Q101
Description: T8 80V N-CH LL IN LFPAK33 PACKAG
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 45µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NVTYS014N08HLTWG |
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Hersteller: onsemi
Description: T8 80V N-CH LL IN LFPAK33 PACKAG
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 45µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 40 V
Qualification: AEC-Q101
Description: T8 80V N-CH LL IN LFPAK33 PACKAG
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 45µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S1AFL |
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Hersteller: onsemi
Description: DIODE STANDARD 50V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Description: DIODE STANDARD 50V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.12 EUR |
21000+ | 0.11 EUR |
NRVS1GFL |
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Hersteller: onsemi
Description: DIODE STANDARD 400V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE STANDARD 400V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.11 EUR |
NRVS1GFL |
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Hersteller: onsemi
Description: DIODE STANDARD 400V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE STANDARD 400V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 10509 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
36+ | 0.49 EUR |
53+ | 0.33 EUR |
100+ | 0.24 EUR |
500+ | 0.20 EUR |
1000+ | 0.17 EUR |
NVMFD6H846NLWFT1G |
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Hersteller: onsemi
Description: MOSFET 2N-CH 80V 9.4A/31A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 34W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 21µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 80V 9.4A/31A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 34W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 21µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 0.99 EUR |
3000+ | 0.92 EUR |
4500+ | 0.90 EUR |
NVMFD6H846NLWFT1G |
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Hersteller: onsemi
Description: MOSFET 2N-CH 80V 9.4A/31A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 34W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 21µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 80V 9.4A/31A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 34W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 21µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5700 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 3.29 EUR |
10+ | 2.10 EUR |
100+ | 1.42 EUR |
500+ | 1.13 EUR |
NVMFD5C446NLWFT1G |
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Hersteller: onsemi
Description: MOSFET 2N-CH 40V 25A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 25A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NVMFD5C446NLWFT1G |
![]() |
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 25A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 25A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 785 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 9.40 EUR |
10+ | 6.28 EUR |
100+ | 4.52 EUR |
500+ | 3.77 EUR |
NVXK2TR40WXT |
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Hersteller: onsemi
Description: APM32 SIC H-BRIDGE POWER MODULE
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.311", 33.30mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 319W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1789pF @ 800V
Rds On (Max) @ Id, Vgs: 59mOhm @ 35A, 20V
Gate Charge (Qg) (Max) @ Vgs: 106nC @ 20V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: APM32
Grade: Automotive
Qualification: AEC-Q101
Description: APM32 SIC H-BRIDGE POWER MODULE
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.311", 33.30mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 319W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1789pF @ 800V
Rds On (Max) @ Id, Vgs: 59mOhm @ 35A, 20V
Gate Charge (Qg) (Max) @ Vgs: 106nC @ 20V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: APM32
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FMS3818KRC |
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Hersteller: onsemi
Description: IC DAC 8BIT A-OUT 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Output Type: Current - Unbuffered
Mounting Type: Surface Mount
Number of Bits: 8
Data Interface: Parallel
Reference Type: External, Internal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Analog: 3V ~ 3.6V
Voltage - Supply, Digital: 3V ~ 3.6V
Settling Time: 2.5µs
Supplier Device Package: 48-LQFP (7x7)
Architecture: Current Steering
Number of D/A Converters: 3
INL/DNL (LSB): ±0.5 (Max), ±0.5 (Max)
Differential Output: No
DigiKey Programmable: Not Verified
Description: IC DAC 8BIT A-OUT 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Output Type: Current - Unbuffered
Mounting Type: Surface Mount
Number of Bits: 8
Data Interface: Parallel
Reference Type: External, Internal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Analog: 3V ~ 3.6V
Voltage - Supply, Digital: 3V ~ 3.6V
Settling Time: 2.5µs
Supplier Device Package: 48-LQFP (7x7)
Architecture: Current Steering
Number of D/A Converters: 3
INL/DNL (LSB): ±0.5 (Max), ±0.5 (Max)
Differential Output: No
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSPU3071N2T5G |
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auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8000+ | 0.11 EUR |
NSPU3071N2T5G |
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auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
30+ | 0.60 EUR |
49+ | 0.37 EUR |
100+ | 0.23 EUR |
500+ | 0.17 EUR |
1000+ | 0.15 EUR |
2000+ | 0.13 EUR |
BZX84C22 |
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Hersteller: onsemi
Description: DIODE ZENER 22V 250MW SOT23-3
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Description: DIODE ZENER 22V 250MW SOT23-3
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Produkt ist nicht verfügbar
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BZX84C22 |
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Hersteller: onsemi
Description: DIODE ZENER 22V 250MW SOT23-3
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Description: DIODE ZENER 22V 250MW SOT23-3
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Produkt ist nicht verfügbar
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NTSV3080CTG |
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Hersteller: onsemi
Description: DIODE ARR SCHOTT 80V 30A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 700 µA @ 80 V
Description: DIODE ARR SCHOTT 80V 30A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 700 µA @ 80 V
Produkt ist nicht verfügbar
Im Einkaufswagen
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MC74VHC573DWR2G |
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Hersteller: onsemi
Description: IC D-TYPE TRANSP SGL 8:8 20SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5ns
Supplier Device Package: 20-SOIC
Description: IC D-TYPE TRANSP SGL 8:8 20SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5ns
Supplier Device Package: 20-SOIC
auf Bestellung 13120 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
486+ | 1.01 EUR |
74VHC573SJX |
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Hersteller: onsemi
Description: IC D-TYPE TRANSP SGL 8:8 20SOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.5ns
Supplier Device Package: 20-SOP
Description: IC D-TYPE TRANSP SGL 8:8 20SOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.5ns
Supplier Device Package: 20-SOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74VHC573SJX |
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Hersteller: onsemi
Description: IC D-TYPE TRANSP SGL 8:8 20SOP
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.5ns
Supplier Device Package: 20-SOP
Description: IC D-TYPE TRANSP SGL 8:8 20SOP
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.5ns
Supplier Device Package: 20-SOP
Produkt ist nicht verfügbar
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Stück im Wert von UAH
74VHC573SJ |
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Hersteller: onsemi
Description: IC D-TYPE TRANSP SGL 8:8 20SOP
Packaging: Tube
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.5ns
Supplier Device Package: 20-SOP
Description: IC D-TYPE TRANSP SGL 8:8 20SOP
Packaging: Tube
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.5ns
Supplier Device Package: 20-SOP
Produkt ist nicht verfügbar
Im Einkaufswagen
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AP0200AT2L00XEGA0-DR |
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Hersteller: onsemi
Description: IC VID IMAGE SGNL PROC 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Function: Processor
Applications: Professional Video
Supplier Device Package: 100-VFBGA (7x7)
Description: IC VID IMAGE SGNL PROC 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Function: Processor
Applications: Professional Video
Supplier Device Package: 100-VFBGA (7x7)
auf Bestellung 925 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 27.58 EUR |
5+ | 25.12 EUR |
10+ | 24.20 EUR |
25+ | 23.11 EUR |
40+ | 22.60 EUR |
80+ | 21.89 EUR |
440+ | 20.39 EUR |