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MM74C927N MM74C927N onsemi MM74C925-28.pdf Description: IC DRVR 7 SEGMENT 4 DIGIT 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Display Type: LED
Mounting Type: Through Hole
Interface: BCD
Configuration: 7 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 6V
Digits or Characters: 4 Digits
Supplier Device Package: 18-PDIP
Current - Supply: 20 µA
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NV25080DTVLT3G NV25080DTVLT3G onsemi nv25080lv-d.pdf Description: IC EEPROM 8KBIT SPI 20MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
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NV25080DTVLT3G NV25080DTVLT3G onsemi nv25080lv-d.pdf Description: IC EEPROM 8KBIT SPI 20MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
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MC74ACT161DR2G MC74ACT161DR2G onsemi mc74ac161-d.pdf Description: IC BINARY COUNTER 4-BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-SOIC
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 125 MHz
Number of Bits per Element: 4
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NTBL080N60S5H NTBL080N60S5H onsemi NTBL080N60S5H-D.PDF Description: MOSFET - POWERNCHANNEL, SUPERFET
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 3.3mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 400 V
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NTMT080N60S5 onsemi NTMT080N60S5-D.PDF Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Bulk
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16.5A, 10V
Power Dissipation (Max): 212W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.4mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3029 pF @ 400 V
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FJH1101 FJH1101 onsemi fjh1101-d.pdf Description: DIODE STANDARD 15V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 15 pA @ 15 V
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MC10EPT20DTG MC10EPT20DTG onsemi mc10ept20-d.pdf Description: IC XLTR MS UNIDIR 8-TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-TSSOP
Channel Type: Unidirectional
Output Signal: LVPECL
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: LVCMOS, LVTTL
Number of Circuits: 1
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MOC3021VM MOC3021VM onsemi moc3023m-d.pdf Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 15mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
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MT9P401I12STC-DP onsemi Description: SENSOR IMAGE CMOS 5MP 48LCC
Packaging: Tray
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MT9P401I12STC-DR onsemi Description: SENSOR IMAGE CMOS 5MP 48LCC
Packaging: Tray
Produkt ist nicht verfügbar
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LM7912CT LM7912CT onsemi LM79xx_Rev2011.pdf Description: IC REG LINEAR -12V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): -12V
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
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UJ3N065025K3S UJ3N065025K3S onsemi UJ3N065025K3S-D.PDF Description: JFET N-CH 650V 85A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 100V
Voltage - Breakdown (V(BR)GSS): 650 V
Current Drain (Id) - Max: 85 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 650 V
Power - Max: 441 W
Resistance - RDS(On): 33 mOhms
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UJ3C065030T3S UJ3C065030T3S onsemi UJ3C065030T3S-D.PDF Description: MOSFET N-CH 650V 85A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
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MC74LVX08DTR2G-Q MC74LVX08DTR2G-Q onsemi mc74lvx08-d.pdf Description: LOG CMOS GATE AND QUAD
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 2.4V
Input Logic Level - Low: 0.5V ~ 0.8V
Max Propagation Delay @ V, Max CL: 10.6ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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MC74LVX08DTR2G-Q MC74LVX08DTR2G-Q onsemi mc74lvx08-d.pdf Description: LOG CMOS GATE AND QUAD
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 2.4V
Input Logic Level - Low: 0.5V ~ 0.8V
Max Propagation Delay @ V, Max CL: 10.6ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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1SMA33CAT3G onsemi Description: 400 W TRANSIENT VOLTAGE SUPPRESS
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 190pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
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1SMB33CAT3G 1SMB33CAT3G onsemi 1SMB10CAT3-D.pdf Description: ZEN SMB TVS CLP 600W 33V
Packaging: Tape & Reel (TR)
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ICTE-010 ICTE-010 onsemi Description: DIODE TVS SINGLE UNI-DIR 10V 1.5
Packaging: Bulk
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NCP362CMUTBG NCP362CMUTBG onsemi ncp362-d.pdf Description: IC OCP TVS ESD USB POS 10-UDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V ~ 20V
Applications: Overvoltage Protection Controller
Supplier Device Package: 10-UDFN (2.5x2)
Current - Supply: 20 µA
DigiKey Programmable: Not Verified
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NCP362CMUTBG NCP362CMUTBG onsemi ncp362-d.pdf Description: IC OCP TVS ESD USB POS 10-UDFN
Packaging: Bulk
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V ~ 20V
Applications: Overvoltage Protection Controller
Supplier Device Package: 10-UDFN (2.5x2)
Current - Supply: 20 µA
DigiKey Programmable: Not Verified
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EMI6316FCTBG onsemi emi6316-d.pdf Description: FILTER RC 40 OHMS/7PF ESD SMD
Packaging: Bulk
Package / Case: 15-XFBGA, WLCSP
Size / Dimension: 0.061" L x 0.061" W (1.55mm x 1.55mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 40Ohms, C = 7pF (Total)
Height: 0.020" (0.50mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC
Resistance - Channel (Ohms): 40
ESD Protection: Yes
Number of Channels: 6
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FGB3245G2-F085C FGB3245G2-F085C onsemi fgd3245g2-f085-d.pdf Description: IGBT 450V 41A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.6 µs
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 900ns/5.4µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 23 nC
Grade: Automotive
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 150 W
Qualification: AEC-Q101
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FGB3245G2-F085C FGB3245G2-F085C onsemi fgd3245g2-f085-d.pdf Description: IGBT 450V 41A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.6 µs
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 900ns/5.4µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 23 nC
Grade: Automotive
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 150 W
Qualification: AEC-Q101
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SI3443DV SI3443DV onsemi si3443dv-d.pdf Description: MOSFET P-CH 20V 4A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
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MC74VHC1GT126MU3TCG MC74VHC1GT126MU3TCG onsemi mc74vhc1g126-d.pdf Description: IC BUFF 1.65V 6-UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-UDFN (1x1)
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MC100LVEL33DTG MC100LVEL33DTG onsemi mc100lvel33-d.pdf Description: IC DIVIDER BY 4 1-BIT 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Divide-by-4
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Trigger Type: Positive, Negative
Supplier Device Package: 8-TSSOP
Voltage - Supply: 3 V ~ 3.8 V
Count Rate: 4 GHz
Number of Bits per Element: 2
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NSV30100LT1G NSV30100LT1G onsemi nss30100l-d.pdf Description: TRANS PNP 30V 1A SOT23-3
Qualification: AEC-Q101
Power - Max: 710 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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NSV30100LT1G NSV30100LT1G onsemi nss30100l-d.pdf Description: TRANS PNP 30V 1A SOT23-3
Qualification: AEC-Q101
Power - Max: 710 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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MT9M413C36STM-DR MT9M413C36STM-DR onsemi MT9M413_DS.pdf Description: SENSOR IMAGE MONO CMOS 280-PGA
Frames per Second: 500.0
Supplier Device Package: 280-PGA
Active Pixel Array: 1280H x 1024V
Pixel Size: 12µm x 12µm
Voltage - Supply: 3.3V
Operating Temperature: -5°C ~ 60°C
Type: CMOS
Package / Case: 280-PGA
Packaging: Tray
Produkt ist nicht verfügbar
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NSVMUN5338DW1T3G NSVMUN5338DW1T3G onsemi mun5338-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms, 47kOhms
Resistor - Emitter Base (R2): 10kOhms, 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
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72+0.3 EUR
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MUN5330DW1T1 MUN5330DW1T1 onsemi MUN5311DW1T1_Series.pdf Description: TRANS BRT DUAL 100MA 50V SOT-363
Packaging: Bulk
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NSVMUN5336DW1T1G NSVMUN5336DW1T1G onsemi dtc115ep-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
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NSVMUN5336DW1T1G NSVMUN5336DW1T1G onsemi dtc115ep-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
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BZX85C4V7 BZX85C4V7 onsemi BZX85C3V3-D.PDF Description: DIODE ZENER 4.7V 1W DO41
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 13 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±6%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 µA @ 1.5 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
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MC74LVX4066MELG MC74LVX4066MELG onsemi mc74lvx4066-d.pdf Description: IC SW SPST-NOX4 20OHM SOEIAJ-14
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 85°C (TA)
On-State Resistance (Max): 20Ohm
-3db Bandwidth: 160MHz
Supplier Device Package: SOEIAJ-14
Voltage - Supply, Single (V+): 2V ~ 6V
Crosstalk: -80dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 4
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UF3C120040K3S UF3C120040K3S onsemi UF3C120040K3S-D.PDF Description: SICFET N-CH 1200V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 12V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
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UF3C120040K4S UF3C120040K4S onsemi UF3C120040K4S-D.PDF Description: SICFET N-CH 1200V 65A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 12V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
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MBR1660 MBR1660 onsemi MBR1635%20-%2060.pdf Description: DIODE SCHOTTKY 60V 16A TO2202
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 16A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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NTND31211PZTAG onsemi NTND31211PZ-D.PDF Description: MOSFET 2P-CH 20V 0.127A 6XLLGA
Input Capacitance (Ciss) (Max) @ Vds: 12.8pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 127mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 125mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel
Mounting Type: Surface Mount
Package / Case: 6-XFLGA
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-XLLGA (0.9x0.65)
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
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NLVHCT14ADR2G NLVHCT14ADR2G onsemi Description: IC INVERT SCHMITT 6CH 1IN 14SOIC
Qualification: AEC-Q100
Current - Quiescent (Max): 1 µA
Number of Circuits: 6
Grade: Automotive
Max Propagation Delay @ V, Max CL: 32ns @ 5V, 50pF
Input Logic Level - Low: 0.1V ~ 0.26V
Input Logic Level - High: 3.98V ~ 5.4V
Supplier Device Package: 14-SOIC
Number of Inputs: 1
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
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NLVHCT14ADR2G NLVHCT14ADR2G onsemi Description: IC INVERT SCHMITT 6CH 1IN 14SOIC
Qualification: AEC-Q100
Current - Quiescent (Max): 1 µA
Number of Circuits: 6
Grade: Automotive
Max Propagation Delay @ V, Max CL: 32ns @ 5V, 50pF
Input Logic Level - Low: 0.1V ~ 0.26V
Input Logic Level - High: 3.98V ~ 5.4V
Supplier Device Package: 14-SOIC
Number of Inputs: 1
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
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NTMFS4C908NAT3G NTMFS4C908NAT3G onsemi Description: TRENCH 6 30V NCH
Packaging: Tape & Reel (TR)
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NTMFS4C908NAT3G NTMFS4C908NAT3G onsemi Description: TRENCH 6 30V NCH
Packaging: Cut Tape (CT)
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NTMFS4C906NBT1G onsemi Description: TRENCH 6 30V NCH
Packaging: Tape & Reel (TR)
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NTMFS4C906NBT1G onsemi Description: TRENCH 6 30V NCH
Packaging: Cut Tape (CT)
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NTMFS4C906NBT3G onsemi Description: TRENCH 6 30V NCH
Packaging: Tape & Reel (TR)
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NTMFS4C908NAT1G onsemi Description: TRENCH 6 30V NCH
Packaging: Tape & Reel (TR)
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NC7WP14P6X NC7WP14P6X onsemi NC7WP14-D.PDF Description: IC INVERT SCHMITT 2CH 2-INP SC88
Current - Quiescent (Max): 900 nA
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 9.2ns @ 3.3V, 30pF
Input Logic Level - Low: 0.1V ~ 0.6V
Input Logic Level - High: 0.65V ~ 2.6V
Supplier Device Package: SC-88 (SC-70-6)
Number of Inputs: 2
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
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MMBV3401LT3G MMBV3401LT3G onsemi mmbv3401lt1-d.pdf Description: RF DIODE PIN 35V 200MW SOT-23-3
Power Dissipation (Max): 200 mW
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Peak Reverse (Max): 35V
Resistance @ If, F: 700mOhm @ 10mA, 100MHz
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - Single
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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UJ3C120070K3S UJ3C120070K3S onsemi da008673 Description: SICFET N-CH 1200V 34.5A TO247-3
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 12V
Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 254.2W (Tc)
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UF3C120080K3S UF3C120080K3S onsemi UF3C120080K3S-D.PDF Description: SICFET N-CH 1200V 33A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 254.2W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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UF3C120080K4S UF3C120080K4S onsemi UF3C120080K4S-D.PDF Description: SICFET N-CH 1200V 33A TO247-4
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Power Dissipation (Max): 254.2W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 6V @ 10mA
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
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UJ3C120070K4S onsemi da008950 Description: 1200V/70MOHM, N-OFF SIC CASCODE,
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 254.2W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 12V
Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
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NC7SZ19P6X NC7SZ19P6X onsemi nc7sz19-d.pdf Description: IC DECODER/DEMUX 1 X 1:2 SC-88
Supplier Device Package: SC-88 (SC-70-6)
Voltage Supply Source: Single Supply
Current - Output High, Low: 32mA, 32mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Decoder/Demultiplexer
Circuit: 1 x 1:2
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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NC7SZ19P6X NC7SZ19P6X onsemi nc7sz19-d.pdf Description: IC DECODER/DEMUX 1 X 1:2 SC-88
Voltage Supply Source: Single Supply
Current - Output High, Low: 32mA, 32mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Decoder/Demultiplexer
Circuit: 1 x 1:2
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SC-88 (SC-70-6)
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UJ3N065080K3S UJ3N065080K3S onsemi uj3n065080k3s-d.pdf Description: JFET N-CH 650V 32A TO247-3
Resistance - RDS(On): 95 mOhms
Power - Max: 190 W
Drain to Source Voltage (Vdss): 650 V
Supplier Device Package: TO-247-3
Current Drain (Id) - Max: 32 A
Voltage - Breakdown (V(BR)GSS): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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UF3N170400B7S UF3N170400B7S onsemi UF3N170400B7S-D.PDF Description: JFET N-CH 1.7KV 6.8A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1700 V
Current Drain (Id) - Max: 6.8 A
Supplier Device Package: D2PAK-7
Drain to Source Voltage (Vdss): 1700 V
Power - Max: 68 W
Resistance - RDS(On): 500 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 2.2 µA @ 1700 V
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UF3N170400B7S UF3N170400B7S onsemi UF3N170400B7S-D.PDF Description: JFET N-CH 1.7KV 6.8A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1700 V
Current Drain (Id) - Max: 6.8 A
Supplier Device Package: D2PAK-7
Drain to Source Voltage (Vdss): 1700 V
Power - Max: 68 W
Resistance - RDS(On): 500 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 2.2 µA @ 1700 V
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UJ3N120070K3S UJ3N120070K3S onsemi UJ3N120070K3S-D.PDF Description: JFET N-CH 1200V 33.5A TO247-3
Resistance - RDS(On): 90 mOhms
Power - Max: 254 W
Drain to Source Voltage (Vdss): 1200 V
Supplier Device Package: TO-247-3
Current Drain (Id) - Max: 33.5 A
Voltage - Breakdown (V(BR)GSS): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 100V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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MM74C927N MM74C925-28.pdf
MM74C927N
Hersteller: onsemi
Description: IC DRVR 7 SEGMENT 4 DIGIT 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Display Type: LED
Mounting Type: Through Hole
Interface: BCD
Configuration: 7 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 6V
Digits or Characters: 4 Digits
Supplier Device Package: 18-PDIP
Current - Supply: 20 µA
Produkt ist nicht verfügbar
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NV25080DTVLT3G nv25080lv-d.pdf
NV25080DTVLT3G
Hersteller: onsemi
Description: IC EEPROM 8KBIT SPI 20MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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NV25080DTVLT3G nv25080lv-d.pdf
NV25080DTVLT3G
Hersteller: onsemi
Description: IC EEPROM 8KBIT SPI 20MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MC74ACT161DR2G mc74ac161-d.pdf
MC74ACT161DR2G
Hersteller: onsemi
Description: IC BINARY COUNTER 4-BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-SOIC
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 125 MHz
Number of Bits per Element: 4
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8+69.19 EUR
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NTBL080N60S5H NTBL080N60S5H-D.PDF
NTBL080N60S5H
Hersteller: onsemi
Description: MOSFET - POWERNCHANNEL, SUPERFET
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 3.3mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 400 V
Produkt ist nicht verfügbar
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NTMT080N60S5 NTMT080N60S5-D.PDF
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Bulk
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16.5A, 10V
Power Dissipation (Max): 212W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.4mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3029 pF @ 400 V
Produkt ist nicht verfügbar
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FJH1101 fjh1101-d.pdf
FJH1101
Hersteller: onsemi
Description: DIODE STANDARD 15V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 15 pA @ 15 V
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MC10EPT20DTG mc10ept20-d.pdf
MC10EPT20DTG
Hersteller: onsemi
Description: IC XLTR MS UNIDIR 8-TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-TSSOP
Channel Type: Unidirectional
Output Signal: LVPECL
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: LVCMOS, LVTTL
Number of Circuits: 1
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34+15.84 EUR
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MOC3021VM moc3023m-d.pdf
MOC3021VM
Hersteller: onsemi
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 15mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
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14+1.51 EUR
21+1.05 EUR
100+0.76 EUR
500+0.64 EUR
1000+0.6 EUR
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MT9P401I12STC-DP
Hersteller: onsemi
Description: SENSOR IMAGE CMOS 5MP 48LCC
Packaging: Tray
Produkt ist nicht verfügbar
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MT9P401I12STC-DR
Hersteller: onsemi
Description: SENSOR IMAGE CMOS 5MP 48LCC
Packaging: Tray
Produkt ist nicht verfügbar
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LM7912CT LM79xx_Rev2011.pdf
LM7912CT
Hersteller: onsemi
Description: IC REG LINEAR -12V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): -12V
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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UJ3N065025K3S UJ3N065025K3S-D.PDF
UJ3N065025K3S
Hersteller: onsemi
Description: JFET N-CH 650V 85A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 100V
Voltage - Breakdown (V(BR)GSS): 650 V
Current Drain (Id) - Max: 85 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 650 V
Power - Max: 441 W
Resistance - RDS(On): 33 mOhms
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UJ3C065030T3S UJ3C065030T3S-D.PDF
UJ3C065030T3S
Hersteller: onsemi
Description: MOSFET N-CH 650V 85A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 1883 Stücke:
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100+25.29 EUR
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MC74LVX08DTR2G-Q mc74lvx08-d.pdf
MC74LVX08DTR2G-Q
Hersteller: onsemi
Description: LOG CMOS GATE AND QUAD
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 2.4V
Input Logic Level - Low: 0.5V ~ 0.8V
Max Propagation Delay @ V, Max CL: 10.6ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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2500+0.27 EUR
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MC74LVX08DTR2G-Q mc74lvx08-d.pdf
MC74LVX08DTR2G-Q
Hersteller: onsemi
Description: LOG CMOS GATE AND QUAD
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 2.4V
Input Logic Level - Low: 0.5V ~ 0.8V
Max Propagation Delay @ V, Max CL: 10.6ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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14+1.57 EUR
23+0.93 EUR
28+0.77 EUR
100+0.58 EUR
250+0.5 EUR
500+0.44 EUR
1000+0.39 EUR
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1SMA33CAT3G
Hersteller: onsemi
Description: 400 W TRANSIENT VOLTAGE SUPPRESS
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 190pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
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757+0.73 EUR
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1SMB33CAT3G 1SMB10CAT3-D.pdf
1SMB33CAT3G
Hersteller: onsemi
Description: ZEN SMB TVS CLP 600W 33V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ICTE-010
ICTE-010
Hersteller: onsemi
Description: DIODE TVS SINGLE UNI-DIR 10V 1.5
Packaging: Bulk
auf Bestellung 2500 Stücke:
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807+0.74 EUR
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NCP362CMUTBG ncp362-d.pdf
NCP362CMUTBG
Hersteller: onsemi
Description: IC OCP TVS ESD USB POS 10-UDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V ~ 20V
Applications: Overvoltage Protection Controller
Supplier Device Package: 10-UDFN (2.5x2)
Current - Supply: 20 µA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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NCP362CMUTBG ncp362-d.pdf
NCP362CMUTBG
Hersteller: onsemi
Description: IC OCP TVS ESD USB POS 10-UDFN
Packaging: Bulk
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V ~ 20V
Applications: Overvoltage Protection Controller
Supplier Device Package: 10-UDFN (2.5x2)
Current - Supply: 20 µA
DigiKey Programmable: Not Verified
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567+1.06 EUR
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EMI6316FCTBG emi6316-d.pdf
Hersteller: onsemi
Description: FILTER RC 40 OHMS/7PF ESD SMD
Packaging: Bulk
Package / Case: 15-XFBGA, WLCSP
Size / Dimension: 0.061" L x 0.061" W (1.55mm x 1.55mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 40Ohms, C = 7pF (Total)
Height: 0.020" (0.50mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC
Resistance - Channel (Ohms): 40
ESD Protection: Yes
Number of Channels: 6
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FGB3245G2-F085C fgd3245g2-f085-d.pdf
FGB3245G2-F085C
Hersteller: onsemi
Description: IGBT 450V 41A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.6 µs
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 900ns/5.4µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 23 nC
Grade: Automotive
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 150 W
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
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800+2.42 EUR
1600+2.26 EUR
2400+2.25 EUR
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FGB3245G2-F085C fgd3245g2-f085-d.pdf
FGB3245G2-F085C
Hersteller: onsemi
Description: IGBT 450V 41A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.6 µs
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 900ns/5.4µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 23 nC
Grade: Automotive
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 150 W
Qualification: AEC-Q101
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4+6.97 EUR
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SI3443DV si3443dv-d.pdf
SI3443DV
Hersteller: onsemi
Description: MOSFET P-CH 20V 4A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Produkt ist nicht verfügbar
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MC74VHC1GT126MU3TCG mc74vhc1g126-d.pdf
MC74VHC1GT126MU3TCG
Hersteller: onsemi
Description: IC BUFF 1.65V 6-UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-UDFN (1x1)
auf Bestellung 53 Stücke:
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MC100LVEL33DTG mc100lvel33-d.pdf
MC100LVEL33DTG
Hersteller: onsemi
Description: IC DIVIDER BY 4 1-BIT 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Divide-by-4
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Trigger Type: Positive, Negative
Supplier Device Package: 8-TSSOP
Voltage - Supply: 3 V ~ 3.8 V
Count Rate: 4 GHz
Number of Bits per Element: 2
auf Bestellung 27641 Stücke:
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32+16.86 EUR
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NSV30100LT1G nss30100l-d.pdf
NSV30100LT1G
Hersteller: onsemi
Description: TRANS PNP 30V 1A SOT23-3
Qualification: AEC-Q101
Power - Max: 710 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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3000+0.32 EUR
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NSV30100LT1G nss30100l-d.pdf
NSV30100LT1G
Hersteller: onsemi
Description: TRANS PNP 30V 1A SOT23-3
Qualification: AEC-Q101
Power - Max: 710 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+1.38 EUR
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MT9M413C36STM-DR MT9M413_DS.pdf
MT9M413C36STM-DR
Hersteller: onsemi
Description: SENSOR IMAGE MONO CMOS 280-PGA
Frames per Second: 500.0
Supplier Device Package: 280-PGA
Active Pixel Array: 1280H x 1024V
Pixel Size: 12µm x 12µm
Voltage - Supply: 3.3V
Operating Temperature: -5°C ~ 60°C
Type: CMOS
Package / Case: 280-PGA
Packaging: Tray
Produkt ist nicht verfügbar
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NSVMUN5338DW1T3G mun5338-d.pdf
NSVMUN5338DW1T3G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms, 47kOhms
Resistor - Emitter Base (R2): 10kOhms, 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9490 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
44+0.48 EUR
72+0.3 EUR
115+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.11 EUR
5000+0.092 EUR
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MUN5330DW1T1 MUN5311DW1T1_Series.pdf
MUN5330DW1T1
Hersteller: onsemi
Description: TRANS BRT DUAL 100MA 50V SOT-363
Packaging: Bulk
auf Bestellung 105000 Stücke:
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AnzahlPrivatkunde
3620+0.14 EUR
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NSVMUN5336DW1T1G dtc115ep-d.pdf
NSVMUN5336DW1T1G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NSVMUN5336DW1T1G dtc115ep-d.pdf
NSVMUN5336DW1T1G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX85C4V7 BZX85C3V3-D.PDF
BZX85C4V7
Hersteller: onsemi
Description: DIODE ZENER 4.7V 1W DO41
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 13 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±6%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 3 µA @ 1.5 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Produkt ist nicht verfügbar
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MC74LVX4066MELG mc74lvx4066-d.pdf
MC74LVX4066MELG
Hersteller: onsemi
Description: IC SW SPST-NOX4 20OHM SOEIAJ-14
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 85°C (TA)
On-State Resistance (Max): 20Ohm
-3db Bandwidth: 160MHz
Supplier Device Package: SOEIAJ-14
Voltage - Supply, Single (V+): 2V ~ 6V
Crosstalk: -80dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 4
auf Bestellung 47344 Stücke:
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AnzahlPrivatkunde
807+0.74 EUR
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UF3C120040K3S UF3C120040K3S-D.PDF
UF3C120040K3S
Hersteller: onsemi
Description: SICFET N-CH 1200V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 12V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 730 Stücke:
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1+42.22 EUR
30+30.57 EUR
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UF3C120040K4S UF3C120040K4S-D.PDF
UF3C120040K4S
Hersteller: onsemi
Description: SICFET N-CH 1200V 65A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 12V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 9443 Stücke:
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1+49.03 EUR
30+31.71 EUR
120+30.25 EUR
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MBR1660 MBR1635%20-%2060.pdf
MBR1660
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 16A TO2202
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 16A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
auf Bestellung 244 Stücke:
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4+5.7 EUR
50+2.82 EUR
100+2.53 EUR
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NTND31211PZTAG NTND31211PZ-D.PDF
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 0.127A 6XLLGA
Input Capacitance (Ciss) (Max) @ Vds: 12.8pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 127mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 125mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel
Mounting Type: Surface Mount
Package / Case: 6-XFLGA
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-XLLGA (0.9x0.65)
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Produkt ist nicht verfügbar
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NLVHCT14ADR2G
NLVHCT14ADR2G
Hersteller: onsemi
Description: IC INVERT SCHMITT 6CH 1IN 14SOIC
Qualification: AEC-Q100
Current - Quiescent (Max): 1 µA
Number of Circuits: 6
Grade: Automotive
Max Propagation Delay @ V, Max CL: 32ns @ 5V, 50pF
Input Logic Level - Low: 0.1V ~ 0.26V
Input Logic Level - High: 3.98V ~ 5.4V
Supplier Device Package: 14-SOIC
Number of Inputs: 1
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NLVHCT14ADR2G
NLVHCT14ADR2G
Hersteller: onsemi
Description: IC INVERT SCHMITT 6CH 1IN 14SOIC
Qualification: AEC-Q100
Current - Quiescent (Max): 1 µA
Number of Circuits: 6
Grade: Automotive
Max Propagation Delay @ V, Max CL: 32ns @ 5V, 50pF
Input Logic Level - Low: 0.1V ~ 0.26V
Input Logic Level - High: 3.98V ~ 5.4V
Supplier Device Package: 14-SOIC
Number of Inputs: 1
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NTMFS4C908NAT3G
NTMFS4C908NAT3G
Hersteller: onsemi
Description: TRENCH 6 30V NCH
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.37 EUR
Mindestbestellmenge: 5000 Stücke
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NTMFS4C908NAT3G
NTMFS4C908NAT3G
Hersteller: onsemi
Description: TRENCH 6 30V NCH
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.63 EUR
21+1.01 EUR
100+0.65 EUR
500+0.5 EUR
1000+0.45 EUR
2000+0.4 EUR
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NTMFS4C906NBT1G
Hersteller: onsemi
Description: TRENCH 6 30V NCH
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
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AnzahlPrivatkunde
1500+0.46 EUR
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NTMFS4C906NBT1G
Hersteller: onsemi
Description: TRENCH 6 30V NCH
Packaging: Cut Tape (CT)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
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13+1.74 EUR
20+1.08 EUR
100+0.7 EUR
500+0.54 EUR
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NTMFS4C906NBT3G
Hersteller: onsemi
Description: TRENCH 6 30V NCH
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.7 EUR
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NTMFS4C908NAT1G
Hersteller: onsemi
Description: TRENCH 6 30V NCH
Packaging: Tape & Reel (TR)
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.7 EUR
3000+0.64 EUR
4500+0.62 EUR
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NC7WP14P6X NC7WP14-D.PDF
NC7WP14P6X
Hersteller: onsemi
Description: IC INVERT SCHMITT 2CH 2-INP SC88
Current - Quiescent (Max): 900 nA
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 9.2ns @ 3.3V, 30pF
Input Logic Level - Low: 0.1V ~ 0.6V
Input Logic Level - High: 0.65V ~ 2.6V
Supplier Device Package: SC-88 (SC-70-6)
Number of Inputs: 2
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
auf Bestellung 807 Stücke:
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AnzahlPrivatkunde
14+1.59 EUR
22+0.96 EUR
27+0.8 EUR
100+0.61 EUR
250+0.51 EUR
500+0.46 EUR
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MMBV3401LT3G mmbv3401lt1-d.pdf
MMBV3401LT3G
Hersteller: onsemi
Description: RF DIODE PIN 35V 200MW SOT-23-3
Power Dissipation (Max): 200 mW
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Peak Reverse (Max): 35V
Resistance @ If, F: 700mOhm @ 10mA, 100MHz
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - Single
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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UJ3C120070K3S da008673
UJ3C120070K3S
Hersteller: onsemi
Description: SICFET N-CH 1200V 34.5A TO247-3
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 12V
Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 254.2W (Tc)
auf Bestellung 567 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+31.42 EUR
30+22.07 EUR
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UF3C120080K3S UF3C120080K3S-D.PDF
UF3C120080K3S
Hersteller: onsemi
Description: SICFET N-CH 1200V 33A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 254.2W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 11404 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+30.42 EUR
30+20.15 EUR
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UF3C120080K4S UF3C120080K4S-D.PDF
UF3C120080K4S
Hersteller: onsemi
Description: SICFET N-CH 1200V 33A TO247-4
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Power Dissipation (Max): 254.2W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 6V @ 10mA
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
auf Bestellung 184 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+35.8 EUR
30+22.48 EUR
120+20.17 EUR
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UJ3C120070K4S da008950
Hersteller: onsemi
Description: 1200V/70MOHM, N-OFF SIC CASCODE,
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 254.2W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 12V
Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Produkt ist nicht verfügbar
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NC7SZ19P6X nc7sz19-d.pdf
NC7SZ19P6X
Hersteller: onsemi
Description: IC DECODER/DEMUX 1 X 1:2 SC-88
Supplier Device Package: SC-88 (SC-70-6)
Voltage Supply Source: Single Supply
Current - Output High, Low: 32mA, 32mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Decoder/Demultiplexer
Circuit: 1 x 1:2
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.1 EUR
6000+0.09 EUR
9000+0.084 EUR
15000+0.079 EUR
21000+0.075 EUR
30000+0.071 EUR
Mindestbestellmenge: 3000 Stücke
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NC7SZ19P6X nc7sz19-d.pdf
NC7SZ19P6X
Hersteller: onsemi
Description: IC DECODER/DEMUX 1 X 1:2 SC-88
Voltage Supply Source: Single Supply
Current - Output High, Low: 32mA, 32mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Decoder/Demultiplexer
Circuit: 1 x 1:2
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SC-88 (SC-70-6)
auf Bestellung 48333 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
112+0.19 EUR
170+0.12 EUR
194+0.11 EUR
231+0.09 EUR
254+0.082 EUR
500+0.077 EUR
1000+0.074 EUR
Mindestbestellmenge: 112 Stücke
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UJ3N065080K3S uj3n065080k3s-d.pdf
UJ3N065080K3S
Hersteller: onsemi
Description: JFET N-CH 650V 32A TO247-3
Resistance - RDS(On): 95 mOhms
Power - Max: 190 W
Drain to Source Voltage (Vdss): 650 V
Supplier Device Package: TO-247-3
Current Drain (Id) - Max: 32 A
Voltage - Breakdown (V(BR)GSS): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 622 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.43 EUR
30+11.51 EUR
120+10.97 EUR
510+10.44 EUR
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UF3N170400B7S UF3N170400B7S-D.PDF
UF3N170400B7S
Hersteller: onsemi
Description: JFET N-CH 1.7KV 6.8A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1700 V
Current Drain (Id) - Max: 6.8 A
Supplier Device Package: D2PAK-7
Drain to Source Voltage (Vdss): 1700 V
Power - Max: 68 W
Resistance - RDS(On): 500 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 2.2 µA @ 1700 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+9.27 EUR
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UF3N170400B7S UF3N170400B7S-D.PDF
UF3N170400B7S
Hersteller: onsemi
Description: JFET N-CH 1.7KV 6.8A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1700 V
Current Drain (Id) - Max: 6.8 A
Supplier Device Package: D2PAK-7
Drain to Source Voltage (Vdss): 1700 V
Power - Max: 68 W
Resistance - RDS(On): 500 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 2.2 µA @ 1700 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+21.07 EUR
10+14.57 EUR
100+11.35 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UJ3N120070K3S UJ3N120070K3S-D.PDF
UJ3N120070K3S
Hersteller: onsemi
Description: JFET N-CH 1200V 33.5A TO247-3
Resistance - RDS(On): 90 mOhms
Power - Max: 254 W
Drain to Source Voltage (Vdss): 1200 V
Supplier Device Package: TO-247-3
Current Drain (Id) - Max: 33.5 A
Voltage - Breakdown (V(BR)GSS): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 100V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 1553 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+35.55 EUR
30+22.31 EUR
120+20.02 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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