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FOD2711ASDV FOD2711ASDV onsemi fod2711a-d.pdf Description: OPTOISOLATOR 5KV TRANSISTOR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
auf Bestellung 2897 Stücke:
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10+1.83 EUR
100+1.30 EUR
500+1.09 EUR
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MM3Z9V1B MM3Z9V1B onsemi mm3z9v1b-d.pdf Description: DIODE ZENER 9.1V 200MW SOD323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 450 nA @ 6 V
auf Bestellung 53845 Stücke:
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72+0.25 EUR
114+0.15 EUR
234+0.08 EUR
500+0.07 EUR
1000+0.07 EUR
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SA13AG SA13AG onsemi SA5.0A_Series.pdf Description: TVS DIODE 13VWM 21.5VC AXIAL
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Produkt ist nicht verfügbar
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MM3Z2V7B MM3Z2V7B onsemi mm3z9v1b-d.pdf Description: DIODE ZENER 2.7V 200MW SOD323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 94 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 18 µA @ 1 V
auf Bestellung 57684 Stücke:
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106+0.17 EUR
243+0.07 EUR
500+0.07 EUR
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FDMF3180 FDMF3180 onsemi fdmf3180?pdf=Y Description: IC HALF BRIDGE DRIVER 70A 39QFN
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Applications: General Purpose
Current - Output / Channel: 70A
Technology: Power MOSFET
Supplier Device Package: 39-PQFN (5x6)
Fault Protection: Current Limiting, Over Temperature, UVLO
Load Type: Inductive, Capacitive
auf Bestellung 162000 Stücke:
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FDMF3180 FDMF3180 onsemi fdmf3180?pdf=Y Description: IC HALF BRIDGE DRIVER 70A 39QFN
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Applications: General Purpose
Current - Output / Channel: 70A
Technology: Power MOSFET
Supplier Device Package: 39-PQFN (5x6)
Fault Protection: Current Limiting, Over Temperature, UVLO
Load Type: Inductive, Capacitive
auf Bestellung 164865 Stücke:
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1N746ATR 1N746ATR onsemi 1N4370A,1N4372A.1N746A,1N759A.pdf Description: DIODE ZENER 3.3V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
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NCP81382LMNTXG onsemi Description: IC REG SYNC BUCK CONV QFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NCP81382LMNTXG onsemi Description: IC REG SYNC BUCK CONV QFN
Packaging: Bulk
auf Bestellung 300000 Stücke:
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1N5379B 1N5379B onsemi 1N5333B-D%20Rev3.pdf Description: DIODE ZENER 110V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 83.6 V
Produkt ist nicht verfügbar
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NTBG080N120SC1 NTBG080N120SC1 onsemi ntbg080n120sc1-d.pdf Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
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NTBG080N120SC1 NTBG080N120SC1 onsemi ntbg080n120sc1-d.pdf Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
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NVBG080N120SC1 NVBG080N120SC1 onsemi nvbg080n120sc1-d.pdf Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 5600 Stücke:
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NVBG080N120SC1 NVBG080N120SC1 onsemi nvbg080n120sc1-d.pdf Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 6170 Stücke:
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NVH4L080N120SC1 NVH4L080N120SC1 onsemi nvh4l080n120sc1-d.pdf Description: SICFET N-CH 1200V 29A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 51642 Stücke:
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1+19.17 EUR
30+14.95 EUR
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74LVTH162245GX 74LVTH162245GX onsemi 74lvt162245-d.pdf Description: IC TXRX NON-INVERT 3.6V 54FBGA
Packaging: Tape & Reel (TR)
Package / Case: 54-LFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 12mA, 12mA; 32mA, 64mA
Supplier Device Package: 54-FBGA (5.5x8)
Produkt ist nicht verfügbar
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74VCX164245G 74VCX164245G onsemi 74VCX164245.pdf Description: IC TXRX NON-INVERT 3.6V 54FBGA
Packaging: Tray
Package / Case: 54-LFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 54-FBGA (5.5x8)
Produkt ist nicht verfügbar
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74LVTH162245G 74LVTH162245G onsemi 74lvt162245-d.pdf Description: IC TXRX NON-INVERT 3.6V 54FBGA
Packaging: Tape & Reel (TR)
Package / Case: 54-LFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 12mA, 12mA; 32mA, 64mA
Supplier Device Package: 54-FBGA (5.5x8)
Produkt ist nicht verfügbar
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FSLV16211GX FSLV16211GX onsemi fslv16211-d.pdf Description: IC BUS SWITCH 12 X 1:1 54FBGA
Packaging: Tape & Reel (TR)
Package / Case: 54-LFBGA
Mounting Type: Surface Mount
Circuit: 12 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 54-FBGA (5.5x8)
Produkt ist nicht verfügbar
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NCP720BMT170TBG NCP720BMT170TBG onsemi ncp720-d.pdf Description: IC REG LINEAR 1.7V 350MA 6-WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 350mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 1.7V
Control Features: Enable
PSRR: 65dB ~ 25dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 1.4V @ 350mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
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NCP720BMT170TBG NCP720BMT170TBG onsemi ncp720-d.pdf Description: IC REG LINEAR 1.7V 350MA 6-WDFN
Packaging: Bulk
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 350mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 1.7V
Control Features: Enable
PSRR: 65dB ~ 25dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 1.4V @ 350mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
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NVMFS5C450NLAFT1G NVMFS5C450NLAFT1G onsemi nvmfs5c450nl-d.pdf Description: MOSFET N-CH 40V 110A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS5C450NLAFT1G NVMFS5C450NLAFT1G onsemi nvmfs5c450nl-d.pdf Description: MOSFET N-CH 40V 110A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FQE10N20CTU FQE10N20CTU onsemi FQE10N20C.pdf Description: MOSFET N-CH 200V 4A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2A, 10V
Power Dissipation (Max): 12.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-126-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Produkt ist nicht verfügbar
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FCP125N65S3 FCP125N65S3 onsemi fcp125n65s3-d.pdf Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 2265 Stücke:
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3+7.18 EUR
50+6.16 EUR
100+6.03 EUR
500+3.12 EUR
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74VHC573MX 74VHC573MX onsemi 74vhc573-d.pdf Description: IC D-TYPE TRANSP SGL 8:8 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.5ns
Supplier Device Package: 20-SOIC
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74VHC573MX 74VHC573MX onsemi 74vhc573-d.pdf Description: IC D-TYPE TRANSP SGL 8:8 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.5ns
Supplier Device Package: 20-SOIC
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NXH030F120M3F1PTG NXH030F120M3F1PTG onsemi nxh030f120m3f1-d.pdf Description: MOSFET 4N-CH 1200V 38A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 100W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2246pF @ 800V
Rds On (Max) @ Id, Vgs: 38.5mOhm @ 30A, 18V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 18V
FET Feature: Depletion Mode
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: 22-PIM (33.8x42.5)
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1+114.12 EUR
10+90.97 EUR
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NXH030P120M3F1PTG NXH030P120M3F1PTG onsemi nxh030p120m3f1-d.pdf Description: MOSFET 2N-CH 1200V 42A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 100W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2271pF @ 800V
Rds On (Max) @ Id, Vgs: 38.5mOhm @ 30A, 18V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 18V
Vgs(th) (Max) @ Id: 4.4V @ 15mA
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MPSA06 MPSA06 onsemi pzta06-d.pdf Description: TRANS NPN 80V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
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DTC115TET1G DTC115TET1G onsemi dtc115t-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 100 kOhms
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DTC115TET1G DTC115TET1G onsemi dtc115t-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 100 kOhms
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DTC115TM3T5G DTC115TM3T5G onsemi dtc115t-d.pdf Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 100 kOhms
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DTC115TM3T5G DTC115TM3T5G onsemi dtc115t-d.pdf Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 100 kOhms
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DTC115TM3T5G DTC115TM3T5G onsemi dtc115t-d.pdf Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 100 kOhms
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KSB772OS KSB772OS onsemi ksb772-d.pdf Description: TRANS PNP 30V 3A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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FSB50450A FSB50450A onsemi fsb50450at-d.pdf Description: MODULE SPM 500V 1.5A 23PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.573", 14.56mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
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FSB50450AT FSB50450AT onsemi fsb50450at-d.pdf Description: MODULE SPM 500V 1.5A 23PWRDIP
Packaging: Bulk
Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
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FSB50450AT FSB50450AT onsemi fsb50450at-d.pdf Description: MODULE SPM 500V 1.5A 23PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
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NRVSRD620VCTT4RG NRVSRD620VCTT4RG onsemi MSRD620CTR-D.PDF Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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NRVSRD620VCTT4RG NRVSRD620VCTT4RG onsemi MSRD620CTR-D.PDF Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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NCV8501PDW50G NCV8501PDW50G onsemi ncv8501-d.pdf Description: IC REG LINEAR 5V 150MA 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 16-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Grade: Automotive
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 19 mA
Qualification: AEC-Q100
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NCV8800HDW50R2G NCV8800HDW50R2G onsemi ncv8800-d.pdf Description: IC REG BUCK 5V 1A 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 16-SOIC
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
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MC74HC02ADR2G-Q MC74HC02ADR2G-Q onsemi mc74hc02a-d.pdf Description: QUAD 2-INPUT NOR GATE
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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MC74HC02ADR2G-Q MC74HC02ADR2G-Q onsemi mc74hc02a-d.pdf Description: QUAD 2-INPUT NOR GATE
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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DM7414N DM7414N onsemi DM7414.pdf Description: IC INVERT SCHMITT 6CH 1IN 14MDIP
Features: Schmitt Trigger
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: Inverter
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Output High, Low: 800µA, 16mA
Number of Inputs: 1
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.6V
Max Propagation Delay @ V, Max CL: 22ns @ 5V, 15pF
Number of Circuits: 6
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FSB50660SF FSB50660SF onsemi fsb50660sft-d.pdf Description: MODULE SPM 600V 3.1A 23PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.573", 14.56mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 3.1 A
Voltage: 600 V
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FSB50660SF FSB50660SF onsemi fsb50660sft-d.pdf Description: MODULE SPM 600V 3.1A 23PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.573", 14.56mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 3.1 A
Voltage: 600 V
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FDMS8570S FDMS8570S onsemi FAIR-S-A0002363806-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2825 pF @ 13 V
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MC74VHC1G08DBVT1G MC74VHC1G08DBVT1G onsemi mc74vhc1g08-d.pdf Description: IC GATE AND 1CH 2-INP SC74A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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MC74VHC1G08DBVT1G MC74VHC1G08DBVT1G onsemi mc74vhc1g08-d.pdf Description: IC GATE AND 1CH 2-INP SC74A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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MC74VHC1G08DBVT1G-Q MC74VHC1G08DBVT1G-Q onsemi MC74VHC1G08-D.PDF Description: SINGLE 2-INPUT AND GATE
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
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MC74VHC1G08DBVT1G-Q MC74VHC1G08DBVT1G-Q onsemi MC74VHC1G08-D.PDF Description: SINGLE 2-INPUT AND GATE
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
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MC74VHC1G08DTT1H MC74VHC1G08DTT1H onsemi mc74vhc1g08-d.pdf Description: IC GATE AND 1CH 2-INP 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-TSOP
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NXH008T120M3F2PTHG NXH008T120M3F2PTHG onsemi nxh008t120m3f2-d.pdf Description: MOSFET 4N-CH 1200V 129A 29PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 371W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9129pF @ 800V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 60mA
Supplier Device Package: 29-PIM (56.7x42.5)
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NXH015P120M3F1PTG NXH015P120M3F1PTG onsemi nxh015p120m3f1-d.pdf Description: MOSFET 2N-CH 1200V 77A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 198W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4696pF @ 800V
Rds On (Max) @ Id, Vgs: 20mOhm @ 60A, 18V
Gate Charge (Qg) (Max) @ Vgs: 211nC @ 18V
Vgs(th) (Max) @ Id: 4.4V @ 30mA
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NXH008P120M3F1PG NXH008P120M3F1PG onsemi nxh008p120m3f1-d.pdf Description: MOSFET 2N-CH 1200V 145A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 382W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8334pF @ 800V
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 120A, 18V
Gate Charge (Qg) (Max) @ Vgs: 419nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
auf Bestellung 56 Stücke:
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NXH008P120M3F1PTG NXH008P120M3F1PTG onsemi nxh008p120m3f1-d.pdf Description: MOSFET 2N-CH 1200V 145A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 382W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8334pF @ 800V
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 120A, 18V
Gate Charge (Qg) (Max) @ Vgs: 419nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
auf Bestellung 28 Stücke:
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1+172.48 EUR
10+139.39 EUR
28+131.48 EUR
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7WB3125AMX1TCG 7WB3125AMX1TCG onsemi 7wb3125-d.pdf Description: IC BUS SWITCH 1 X 1:1 8ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.95x1)
auf Bestellung 6000 Stücke:
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1567+0.32 EUR
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7WB3126AMX1TCG 7WB3126AMX1TCG onsemi 7wb3126-d.pdf Description: IC BUS SWITCH 1 X 1:1 8ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.95x1)
auf Bestellung 6000 Stücke:
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1567+0.32 EUR
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FOD2711ASDV fod2711a-d.pdf
FOD2711ASDV
Hersteller: onsemi
Description: OPTOISOLATOR 5KV TRANSISTOR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
auf Bestellung 2897 Stücke:
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Anzahl Preis
7+2.87 EUR
10+1.83 EUR
100+1.30 EUR
500+1.09 EUR
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MM3Z9V1B mm3z9v1b-d.pdf
MM3Z9V1B
Hersteller: onsemi
Description: DIODE ZENER 9.1V 200MW SOD323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 450 nA @ 6 V
auf Bestellung 53845 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
114+0.15 EUR
234+0.08 EUR
500+0.07 EUR
1000+0.07 EUR
Mindestbestellmenge: 72
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SA13AG SA5.0A_Series.pdf
SA13AG
Hersteller: onsemi
Description: TVS DIODE 13VWM 21.5VC AXIAL
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Produkt ist nicht verfügbar
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MM3Z2V7B mm3z9v1b-d.pdf
MM3Z2V7B
Hersteller: onsemi
Description: DIODE ZENER 2.7V 200MW SOD323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 94 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 18 µA @ 1 V
auf Bestellung 57684 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
106+0.17 EUR
243+0.07 EUR
500+0.07 EUR
1000+0.07 EUR
Mindestbestellmenge: 67
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FDMF3180 fdmf3180?pdf=Y
FDMF3180
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 70A 39QFN
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Applications: General Purpose
Current - Output / Channel: 70A
Technology: Power MOSFET
Supplier Device Package: 39-PQFN (5x6)
Fault Protection: Current Limiting, Over Temperature, UVLO
Load Type: Inductive, Capacitive
auf Bestellung 162000 Stücke:
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Anzahl Preis
3000+2.74 EUR
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FDMF3180 fdmf3180?pdf=Y
FDMF3180
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 70A 39QFN
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Applications: General Purpose
Current - Output / Channel: 70A
Technology: Power MOSFET
Supplier Device Package: 39-PQFN (5x6)
Fault Protection: Current Limiting, Over Temperature, UVLO
Load Type: Inductive, Capacitive
auf Bestellung 164865 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.71 EUR
10+5.10 EUR
100+3.61 EUR
500+2.98 EUR
1000+2.77 EUR
Mindestbestellmenge: 3
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1N746ATR 1N4370A,1N4372A.1N746A,1N759A.pdf
1N746ATR
Hersteller: onsemi
Description: DIODE ZENER 3.3V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
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NCP81382LMNTXG
Hersteller: onsemi
Description: IC REG SYNC BUCK CONV QFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NCP81382LMNTXG
Hersteller: onsemi
Description: IC REG SYNC BUCK CONV QFN
Packaging: Bulk
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
437+1.13 EUR
Mindestbestellmenge: 437
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1N5379B 1N5333B-D%20Rev3.pdf
1N5379B
Hersteller: onsemi
Description: DIODE ZENER 110V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 83.6 V
Produkt ist nicht verfügbar
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NTBG080N120SC1 ntbg080n120sc1-d.pdf
NTBG080N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+10.79 EUR
Mindestbestellmenge: 800
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NTBG080N120SC1 ntbg080n120sc1-d.pdf
NTBG080N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
auf Bestellung 1035 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.64 EUR
10+12.17 EUR
100+11.03 EUR
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NVBG080N120SC1 nvbg080n120sc1-d.pdf
NVBG080N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 5600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+14.16 EUR
Mindestbestellmenge: 800
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NVBG080N120SC1 nvbg080n120sc1-d.pdf
NVBG080N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 6170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+26.54 EUR
10+18.78 EUR
100+14.41 EUR
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NVH4L080N120SC1 nvh4l080n120sc1-d.pdf
NVH4L080N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 29A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 51642 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.17 EUR
30+14.95 EUR
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74LVTH162245GX 74lvt162245-d.pdf
74LVTH162245GX
Hersteller: onsemi
Description: IC TXRX NON-INVERT 3.6V 54FBGA
Packaging: Tape & Reel (TR)
Package / Case: 54-LFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 12mA, 12mA; 32mA, 64mA
Supplier Device Package: 54-FBGA (5.5x8)
Produkt ist nicht verfügbar
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74VCX164245G 74VCX164245.pdf
74VCX164245G
Hersteller: onsemi
Description: IC TXRX NON-INVERT 3.6V 54FBGA
Packaging: Tray
Package / Case: 54-LFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 54-FBGA (5.5x8)
Produkt ist nicht verfügbar
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74LVTH162245G 74lvt162245-d.pdf
74LVTH162245G
Hersteller: onsemi
Description: IC TXRX NON-INVERT 3.6V 54FBGA
Packaging: Tape & Reel (TR)
Package / Case: 54-LFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 12mA, 12mA; 32mA, 64mA
Supplier Device Package: 54-FBGA (5.5x8)
Produkt ist nicht verfügbar
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FSLV16211GX fslv16211-d.pdf
FSLV16211GX
Hersteller: onsemi
Description: IC BUS SWITCH 12 X 1:1 54FBGA
Packaging: Tape & Reel (TR)
Package / Case: 54-LFBGA
Mounting Type: Surface Mount
Circuit: 12 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 54-FBGA (5.5x8)
Produkt ist nicht verfügbar
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NCP720BMT170TBG ncp720-d.pdf
NCP720BMT170TBG
Hersteller: onsemi
Description: IC REG LINEAR 1.7V 350MA 6-WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 350mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 1.7V
Control Features: Enable
PSRR: 65dB ~ 25dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 1.4V @ 350mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Produkt ist nicht verfügbar
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NCP720BMT170TBG ncp720-d.pdf
NCP720BMT170TBG
Hersteller: onsemi
Description: IC REG LINEAR 1.7V 350MA 6-WDFN
Packaging: Bulk
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 350mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 1.7V
Control Features: Enable
PSRR: 65dB ~ 25dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 1.4V @ 350mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1737+0.29 EUR
Mindestbestellmenge: 1737
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NVMFS5C450NLAFT1G nvmfs5c450nl-d.pdf
NVMFS5C450NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 110A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS5C450NLAFT1G nvmfs5c450nl-d.pdf
NVMFS5C450NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 110A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FQE10N20CTU FQE10N20C.pdf
FQE10N20CTU
Hersteller: onsemi
Description: MOSFET N-CH 200V 4A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2A, 10V
Power Dissipation (Max): 12.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-126-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Produkt ist nicht verfügbar
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FCP125N65S3 fcp125n65s3-d.pdf
FCP125N65S3
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 2265 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.18 EUR
50+6.16 EUR
100+6.03 EUR
500+3.12 EUR
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74VHC573MX 74vhc573-d.pdf
74VHC573MX
Hersteller: onsemi
Description: IC D-TYPE TRANSP SGL 8:8 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.5ns
Supplier Device Package: 20-SOIC
Produkt ist nicht verfügbar
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74VHC573MX 74vhc573-d.pdf
74VHC573MX
Hersteller: onsemi
Description: IC D-TYPE TRANSP SGL 8:8 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.5ns
Supplier Device Package: 20-SOIC
auf Bestellung 3 Stücke:
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NXH030F120M3F1PTG nxh030f120m3f1-d.pdf
NXH030F120M3F1PTG
Hersteller: onsemi
Description: MOSFET 4N-CH 1200V 38A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 100W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2246pF @ 800V
Rds On (Max) @ Id, Vgs: 38.5mOhm @ 30A, 18V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 18V
FET Feature: Depletion Mode
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: 22-PIM (33.8x42.5)
auf Bestellung 26 Stücke:
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Anzahl Preis
1+114.12 EUR
10+90.97 EUR
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NXH030P120M3F1PTG nxh030p120m3f1-d.pdf
NXH030P120M3F1PTG
Hersteller: onsemi
Description: MOSFET 2N-CH 1200V 42A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 100W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2271pF @ 800V
Rds On (Max) @ Id, Vgs: 38.5mOhm @ 30A, 18V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 18V
Vgs(th) (Max) @ Id: 4.4V @ 15mA
auf Bestellung 28 Stücke:
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Anzahl Preis
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MPSA06 pzta06-d.pdf
MPSA06
Hersteller: onsemi
Description: TRANS NPN 80V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
auf Bestellung 18289 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
42+0.42 EUR
100+0.27 EUR
500+0.20 EUR
1000+0.18 EUR
2000+0.16 EUR
5000+0.14 EUR
10000+0.13 EUR
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DTC115TET1G dtc115t-d.pdf
DTC115TET1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 100 kOhms
Produkt ist nicht verfügbar
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DTC115TET1G dtc115t-d.pdf
DTC115TET1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 100 kOhms
Produkt ist nicht verfügbar
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DTC115TM3T5G dtc115t-d.pdf
DTC115TM3T5G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 100 kOhms
Produkt ist nicht verfügbar
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DTC115TM3T5G dtc115t-d.pdf
DTC115TM3T5G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 100 kOhms
Produkt ist nicht verfügbar
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DTC115TM3T5G dtc115t-d.pdf
DTC115TM3T5G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 100 kOhms
auf Bestellung 152000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8535+0.07 EUR
Mindestbestellmenge: 8535
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KSB772OS ksb772-d.pdf
KSB772OS
Hersteller: onsemi
Description: TRANS PNP 30V 3A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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FSB50450A fsb50450at-d.pdf
FSB50450A
Hersteller: onsemi
Description: MODULE SPM 500V 1.5A 23PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.573", 14.56mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
Produkt ist nicht verfügbar
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FSB50450AT fsb50450at-d.pdf
FSB50450AT
Hersteller: onsemi
Description: MODULE SPM 500V 1.5A 23PWRDIP
Packaging: Bulk
Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
auf Bestellung 360 Stücke:
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Anzahl Preis
64+7.61 EUR
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FSB50450AT fsb50450at-d.pdf
FSB50450AT
Hersteller: onsemi
Description: MODULE SPM 500V 1.5A 23PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
Produkt ist nicht verfügbar
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NRVSRD620VCTT4RG MSRD620CTR-D.PDF
NRVSRD620VCTT4RG
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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NRVSRD620VCTT4RG MSRD620CTR-D.PDF
NRVSRD620VCTT4RG
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 2327 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.69 EUR
13+1.36 EUR
100+1.06 EUR
500+0.84 EUR
1000+0.76 EUR
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NCV8501PDW50G ncv8501-d.pdf
NCV8501PDW50G
Hersteller: onsemi
Description: IC REG LINEAR 5V 150MA 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 16-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Grade: Automotive
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 19 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NCV8800HDW50R2G ncv8800-d.pdf
NCV8800HDW50R2G
Hersteller: onsemi
Description: IC REG BUCK 5V 1A 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 16-SOIC
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
auf Bestellung 60716 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
151+3.16 EUR
Mindestbestellmenge: 151
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MC74HC02ADR2G-Q mc74hc02a-d.pdf
MC74HC02ADR2G-Q
Hersteller: onsemi
Description: QUAD 2-INPUT NOR GATE
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.25 EUR
5000+0.23 EUR
7500+0.21 EUR
12500+0.20 EUR
17500+0.19 EUR
62500+0.18 EUR
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MC74HC02ADR2G-Q mc74hc02a-d.pdf
MC74HC02ADR2G-Q
Hersteller: onsemi
Description: QUAD 2-INPUT NOR GATE
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 122437 Stücke:
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Anzahl Preis
28+0.65 EUR
40+0.45 EUR
45+0.40 EUR
100+0.35 EUR
250+0.32 EUR
500+0.30 EUR
1000+0.29 EUR
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DM7414N DM7414.pdf
DM7414N
Hersteller: onsemi
Description: IC INVERT SCHMITT 6CH 1IN 14MDIP
Features: Schmitt Trigger
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: Inverter
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Output High, Low: 800µA, 16mA
Number of Inputs: 1
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.6V
Max Propagation Delay @ V, Max CL: 22ns @ 5V, 15pF
Number of Circuits: 6
Produkt ist nicht verfügbar
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FSB50660SF fsb50660sft-d.pdf
FSB50660SF
Hersteller: onsemi
Description: MODULE SPM 600V 3.1A 23PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.573", 14.56mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 3.1 A
Voltage: 600 V
Produkt ist nicht verfügbar
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FSB50660SF fsb50660sft-d.pdf
FSB50660SF
Hersteller: onsemi
Description: MODULE SPM 600V 3.1A 23PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.573", 14.56mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 3.1 A
Voltage: 600 V
Produkt ist nicht verfügbar
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FDMS8570S FAIR-S-A0002363806-1.pdf?t.download=true&u=5oefqw
FDMS8570S
Hersteller: onsemi
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2825 pF @ 13 V
auf Bestellung 81000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
544+0.89 EUR
Mindestbestellmenge: 544
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MC74VHC1G08DBVT1G mc74vhc1g08-d.pdf
MC74VHC1G08DBVT1G
Hersteller: onsemi
Description: IC GATE AND 1CH 2-INP SC74A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.10 EUR
Mindestbestellmenge: 3000
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MC74VHC1G08DBVT1G mc74vhc1g08-d.pdf
MC74VHC1G08DBVT1G
Hersteller: onsemi
Description: IC GATE AND 1CH 2-INP SC74A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 4135 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
58+0.31 EUR
70+0.25 EUR
100+0.19 EUR
250+0.15 EUR
500+0.14 EUR
1000+0.12 EUR
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MC74VHC1G08DBVT1G-Q MC74VHC1G08-D.PDF
MC74VHC1G08DBVT1G-Q
Hersteller: onsemi
Description: SINGLE 2-INPUT AND GATE
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
auf Bestellung 147000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.09 EUR
6000+0.08 EUR
9000+0.08 EUR
15000+0.08 EUR
21000+0.07 EUR
30000+0.07 EUR
75000+0.06 EUR
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MC74VHC1G08DBVT1G-Q MC74VHC1G08-D.PDF
MC74VHC1G08DBVT1G-Q
Hersteller: onsemi
Description: SINGLE 2-INPUT AND GATE
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
auf Bestellung 148225 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
60+0.29 EUR
75+0.24 EUR
102+0.17 EUR
250+0.14 EUR
500+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 34
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MC74VHC1G08DTT1H mc74vhc1g08-d.pdf
MC74VHC1G08DTT1H
Hersteller: onsemi
Description: IC GATE AND 1CH 2-INP 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-TSOP
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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NXH008T120M3F2PTHG nxh008t120m3f2-d.pdf
NXH008T120M3F2PTHG
Hersteller: onsemi
Description: MOSFET 4N-CH 1200V 129A 29PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 371W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9129pF @ 800V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 60mA
Supplier Device Package: 29-PIM (56.7x42.5)
auf Bestellung 58 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+254.51 EUR
20+249.98 EUR
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NXH015P120M3F1PTG nxh015p120m3f1-d.pdf
NXH015P120M3F1PTG
Hersteller: onsemi
Description: MOSFET 2N-CH 1200V 77A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 198W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4696pF @ 800V
Rds On (Max) @ Id, Vgs: 20mOhm @ 60A, 18V
Gate Charge (Qg) (Max) @ Vgs: 211nC @ 18V
Vgs(th) (Max) @ Id: 4.4V @ 30mA
auf Bestellung 153 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+114.12 EUR
10+90.97 EUR
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NXH008P120M3F1PG nxh008p120m3f1-d.pdf
NXH008P120M3F1PG
Hersteller: onsemi
Description: MOSFET 2N-CH 1200V 145A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 382W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8334pF @ 800V
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 120A, 18V
Gate Charge (Qg) (Max) @ Vgs: 419nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+137.98 EUR
10+131.48 EUR
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NXH008P120M3F1PTG nxh008p120m3f1-d.pdf
NXH008P120M3F1PTG
Hersteller: onsemi
Description: MOSFET 2N-CH 1200V 145A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 382W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8334pF @ 800V
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 120A, 18V
Gate Charge (Qg) (Max) @ Vgs: 419nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+172.48 EUR
10+139.39 EUR
28+131.48 EUR
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7WB3125AMX1TCG 7wb3125-d.pdf
7WB3125AMX1TCG
Hersteller: onsemi
Description: IC BUS SWITCH 1 X 1:1 8ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.95x1)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1567+0.32 EUR
Mindestbestellmenge: 1567
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7WB3126AMX1TCG 7wb3126-d.pdf
7WB3126AMX1TCG
Hersteller: onsemi
Description: IC BUS SWITCH 1 X 1:1 8ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.95x1)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1567+0.32 EUR
Mindestbestellmenge: 1567
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