KSA709GBU Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: TRANS PNP 150V 0.7A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
auf Bestellung 129016 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9458+ | 0.05 EUR |
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Technische Details KSA709GBU Fairchild Semiconductor
Description: TRANS PNP 150V 0.7A TO-92-3, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V, Frequency - Transition: 50MHz, Supplier Device Package: TO-92-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 700 mA, Voltage - Collector Emitter Breakdown (Max): 150 V, Power - Max: 800 mW.
Weitere Produktangebote KSA709GBU nach Preis ab 0.03 EUR bis 0.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| KSA709GBU | Hersteller : FAIRCHILD |
KSA709GBU |
auf Bestellung 127000 Stücke: Lieferzeit 14-21 Tag (e) |
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| KSA709GBU | Hersteller : ONSEMI |
Description: ONSEMI - KSA709GBU - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 129016 Stücke: Lieferzeit 14-21 Tag (e) |
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KSA709GBU | Hersteller : onsemi |
Description: TRANS PNP 150V 0.7A TO-92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V Frequency - Transition: 50MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 800 mW |
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