Technische Details MMUN2141LT1G ON Semiconductor
Description: TRANS PREBIAS PNP 50V SOT23-3, Resistor - Base (R1): 100 kOhms, Power - Max: 246 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SOT-23-3 (TO-236), DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote MMUN2141LT1G nach Preis ab 0.04 EUR bis 0.069 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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MMUN2141LT1G | ON Semiconductor |
 Trans Digital BJT PNP 50V 0.1A 400mW 3-Pin SOT-23 T/R |
auf Bestellung 147000 Stücke: Lieferzeit 14-21 Tag (e) |
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MMUN2141LT1G | onsemi |
Description: TRANS PREBIAS PNP 50V SOT23-3 Resistor - Base (R1): 100 kOhms Power - Max: 246 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-23-3 (TO-236) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
auf Bestellung 147000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MMUN2141LT1G | ONSEMI |
Description: ONSEMI - MMUN2141LT1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 168000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| MMUN2141LT1G |
|
Hersteller: ON Semiconductor
Trans Digital BJT PNP 50V 0.1A 400mW 3-Pin SOT-23 T/R
Trans Digital BJT PNP 50V 0.1A 400mW 3-Pin SOT-23 T/R
auf Bestellung 147000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13275+ | 0.05 EUR |
| 100000+ | 0.04 EUR |
| MMUN2141LT1G |
|
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Resistor - Base (R1): 100 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: TRANS PREBIAS PNP 50V SOT23-3
Resistor - Base (R1): 100 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 147000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11539+ | 0.061 EUR |
| MMUN2141LT1G |
|
Hersteller: ONSEMI
Description: ONSEMI - MMUN2141LT1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
Description: ONSEMI - MMUN2141LT1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 168000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15000+ | 0.069 EUR |