| Foto | Bezeichnung | Hersteller | Beschreibung |
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SN74LS280D | onsemi |
 Description: IC PARITY GEN/CHK 9-BIT 14-SOICPackaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Number of Circuits: 9-Bit Mounting Type: Surface Mount Logic Type: Parity Generator/Checker Operating Temperature: 0°C ~ 70°C Current - Output High, Low: 400µA, 8mA Supplier Device Package: 14-SOIC Voltage - Supply: 4.75 V ~ 5.25 V |
auf Bestellung 13259 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPF5N50NZF | onsemi |
Description: MOSFET N-CH 500V 4.2A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Rds On (Max) @ Id, Vgs: 1.75Ohm @ 2.1A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NTD4857NT4G | onsemi |
Description: MOSFET N-CH 25V 12A/78A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V Power Dissipation (Max): 1.31W (Ta), 56.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 12 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NTD4857N-1G | onsemi |
Description: MOSFET N-CH 25V 12A/78A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V Power Dissipation (Max): 1.31W (Ta), 56.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 12 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NTD4856NT4G | onsemi |
Description: MOSFET N-CH 25V 13.3A/89A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 89A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V Power Dissipation (Max): 1.33W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2241 pF @ 12 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NTD4856N-1G | onsemi |
Description: MOSFET N-CH 25V 13.3A/89A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 89A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V Power Dissipation (Max): 1.33W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2241 pF @ 12 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NTD4854NT4G | onsemi |
Description: MOSFET N-CH 25V 15.7A/128A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 128A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 49.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 12 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FFB10UP20STM | onsemi |
Description: DIODE GEN PURP 200V 10A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FFB10UP20STM | onsemi |
Description: DIODE GEN PURP 200V 10A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TL594CD | onsemi |
Description: IC REG CTRLR BCK/PSH-PULL 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Down, Step-Up/Step-Down Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 300kHz Topology: Buck, Push-Pull Voltage - Supply (Vcc/Vdd): 7V ~ 40V Supplier Device Package: 16-SOIC Synchronous Rectifier: Yes Control Features: Dead Time Control, Frequency Control Output Phases: 1 Duty Cycle (Max): 96% Clock Sync: No Number of Outputs: 2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 48 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SZ1SMB5951BT3G | onsemi |
Description: DIODE ZENER 120V 3W SMB Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 120 V Impedance (Max) (Zzt): 380 Ohms Supplier Device Package: SMB Grade: Automotive Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 91.2 V Qualification: AEC-Q101 |
auf Bestellung 9411 Stücke: Lieferzeit 10-14 Tag (e) |
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ISL9V2540S3ST-F085C | onsemi |
Description: IGBT 390V 15.5A TO-263 Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.8V @ 4V, 6A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 610ns/3.64µs Test Condition: 300V, 1kOhm, 5V Gate Charge: 15.1 nC Grade: Automotive Current - Collector (Ic) (Max): 15.5 A Voltage - Collector Emitter Breakdown (Max): 390 V Power - Max: 166.7 W Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CD4021BCCW | onsemi |
Description: IC SR PUSH-PULL 8BIT 16-SOIC Packaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Function: Parallel or Serial to Serial Logic Type: Shift Register Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 15V Supplier Device Package: 16-SOIC Number of Bits per Element: 8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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LM2575D2T-005 | onsemi |
Description: IC REG SW 1A 5V STEPDOWN D2PAK Packaging: Tube |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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LM2575D2T-012G | onsemi |
Description: IC REG BUCK 12V 1A D2PAK-5 Output Type: Fixed Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Packaging: Tube Synchronous Rectifier: No Supplier Device Package: D2PAK-5 Topology: Buck Voltage - Input (Max): 40V Frequency - Switching: 52kHz Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 1A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Voltage - Output (Min/Fixed): 12V Voltage - Input (Min): 4.75V |
auf Bestellung 5897 Stücke: Lieferzeit 10-14 Tag (e) |
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LM2575D2T-015G | onsemi |
Description: IC REG BUCK 15V 1A D2PAK-5 Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Packaging: Tube Voltage - Output (Min/Fixed): 15V Voltage - Input (Min): 4.75V Synchronous Rectifier: No Supplier Device Package: D2PAK-5 Topology: Buck Voltage - Input (Max): 40V Frequency - Switching: 52kHz Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 1A Function: Step-Down |
auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
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LM2575D2T-12R4 | onsemi |
Description: IC REG BUCK 12V 1A D2PAK-5 Voltage - Output (Min/Fixed): 12V Voltage - Input (Min): 4.75V Synchronous Rectifier: No Supplier Device Package: D2PAK-5 Topology: Buck Voltage - Input (Max): 40V Frequency - Switching: 52kHz Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 1A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Packaging: Bulk |
auf Bestellung 275 Stücke: Lieferzeit 10-14 Tag (e) |
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NB7NPQ1402E2MMUTWG | onsemi |
Description: NB7NPQ1402E2M - 3.3 V USB 3.1 GE Signal Conditioning: Input Equalization Supplier Device Package: 24-UQFN (2.5x2.5) Data Rate (Max): 10Gbps Current - Supply: 125mA Applications: USB Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Input: Differential Type: Buffer, ReDriver Output: Differential Mounting Type: Surface Mount Number of Channels: 1 x 2:2 Package / Case: 24-UFQFN Exposed Pad Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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NB7NPQ1402E2MMUTWG | onsemi |
Description: NB7NPQ1402E2M - 3.3 V USB 3.1 GE Applications: USB Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Input: Differential Type: Buffer, ReDriver Output: Differential Mounting Type: Surface Mount Number of Channels: 1 x 2:2 Package / Case: 24-UFQFN Exposed Pad Packaging: Cut Tape (CT) Signal Conditioning: Input Equalization Supplier Device Package: 24-UQFN (2.5x2.5) Data Rate (Max): 10Gbps Current - Supply: 125mA |
auf Bestellung 9057 Stücke: Lieferzeit 10-14 Tag (e) |
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| LC05512Z02XATBG | onsemi |
Description: IC BAT PWR MGMT LI-ION 1C 6WLCSP Fault Protection: Over Current, Over Temperature Supplier Device Package: 6-WLCSP (0.85x1.17) Battery Chemistry: Lithium Ion/Polymer Operating Temperature: -40°C ~ 85°C Function: Power Management Mounting Type: Surface Mount Number of Cells: 1 Package / Case: 6-XFBGA, WLCSP Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| LC05511Z04XATBG | onsemi |
Description: IC BATT PROT LI-ION 1CELL 6WLCSP Fault Protection: Over Current, Over Voltage Supplier Device Package: 6-WLCSP (0.85x1.17) Battery Chemistry: Lithium Ion Operating Temperature: -40°C ~ 85°C (TA) Function: Battery Protection Mounting Type: Surface Mount Number of Cells: 1 Package / Case: 6-XFBGA, WLCSP Packaging: Bulk |
auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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LC05111C21MTTTG | onsemi |
Description: IC BATT PROT LI-ION 1CELL 6WDFN Fault Protection: Over Current Supplier Device Package: 6-WDFN (4x2.6), Dual Flag Battery Chemistry: Lithium Ion Operating Temperature: -40°C ~ 85°C (TA) Function: Battery Protection Mounting Type: Surface Mount Number of Cells: 1 Package / Case: 6-PowerWDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| LC05711A91RATBG | onsemi |
Description: IC BATT PROTECTION 1CELL LIB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| LC05711A01RATBG | onsemi |
Description: IC BATT PROTECTION 1CELL ECP30 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| LC05711A01RATBG | onsemi |
Description: IC BATT PROTECTION 1CELL ECP30 Packaging: Bulk |
auf Bestellung 30500 Stücke: Lieferzeit 10-14 Tag (e) |
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| LC05732A01RATBG | onsemi |
Description: IC BATT PROTECTION 1CELL ECP30 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| LC05732A01RATBG | onsemi |
Description: IC BATT PROTECTION 1CELL ECP30 Packaging: Bulk |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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| LC05711A91RATBG | onsemi |
Description: 1 CELL LIB PROTECTION IC Packaging: Bulk |
auf Bestellung 110000 Stücke: Lieferzeit 10-14 Tag (e) |
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| LC05732A91RATBG | onsemi |
Description: 1 CELL LIB PROTECTION IC Packaging: Bulk |
auf Bestellung 95000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMF6820C | onsemi |
Description: IC HALF BRIDGE DRIVER 50A 40PQFN Features: Bootstrap Circuit, Diode Emulation, Status Flag Packaging: Tape & Reel (TR) Package / Case: 40-PowerTFQFN Mounting Type: Surface Mount Interface: Logic, PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Rds On (Typ): 1Ohm LS, 1Ohm HS Applications: Synchronous Buck Converters Current - Output / Channel: 50A Technology: DrMOS, Power MOSFET Voltage - Load: 3V ~ 16V Supplier Device Package: 40-PQFN (6x6) Fault Protection: Over Temperature, Shoot-Through, UVLO Load Type: Inductive, Capacitive, Resistive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDMF6820C | onsemi |
Description: IC HALF BRIDGE DRIVER 50A 40PQFN Features: Bootstrap Circuit, Diode Emulation, Status Flag Packaging: Cut Tape (CT) Package / Case: 40-PowerTFQFN Mounting Type: Surface Mount Interface: Logic, PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Rds On (Typ): 1Ohm LS, 1Ohm HS Applications: Synchronous Buck Converters Current - Output / Channel: 50A Technology: DrMOS, Power MOSFET Voltage - Load: 3V ~ 16V Supplier Device Package: 40-PQFN (6x6) Fault Protection: Over Temperature, Shoot-Through, UVLO Load Type: Inductive, Capacitive, Resistive |
auf Bestellung 2064 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMF6820B | onsemi |
Description: IC HALF BRIDGE DRIVER 55A 40PQFN Load Type: Inductive Fault Protection: Over Temperature, Shoot-Through, UVLO Supplier Device Package: 40-PQFN (6x6) Voltage - Load: 3V ~ 16V Technology: DrMOS Current - Output / Channel: 55A Applications: Synchronous Buck Converters Rds On (Typ): 1Ohm LS, 1Ohm HS Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: 40-PowerTFQFN Features: Bootstrap Circuit, Status Flag Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDMF6820B | onsemi |
Description: IC HALF BRIDGE DRIVER 55A 40PQFN Load Type: Inductive Fault Protection: Over Temperature, Shoot-Through, UVLO Supplier Device Package: 40-PQFN (6x6) Voltage - Load: 3V ~ 16V Technology: DrMOS Current - Output / Channel: 55A Applications: Synchronous Buck Converters Rds On (Typ): 1Ohm LS, 1Ohm HS Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: 40-PowerTFQFN Features: Bootstrap Circuit, Status Flag Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SZSM24T1G | onsemi |
Description: TVS DIODE 24VWM 43VC SOT233 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 43V Power - Peak Pulse: 300W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MUN5231T1G | onsemi |
Description: TRANS PREBIAS NPN 50V SC70-3 Resistor - Emitter Base (R2): 2.2 kOhms Resistor - Base (R1): 2.2 kOhms Power - Max: 202 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SC-70-3 (SOT323) DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Bulk |
auf Bestellung 137057 Stücke: Lieferzeit 10-14 Tag (e) |
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NSBC123JDXV6T1G | onsemi |
Description: TRANS PREBIAS 2NPN 50V SOT563 Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSBC123EPDXV6T1 | onsemi |
Description: TRANS PREBIAS NPN/PNP SOT563 DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 2.2kOhms Resistor - Base (R1): 2.2kOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NSBC123JPDXV6T5 | onsemi |
Description: TRANS BR NPN/PNP DUAL 50V SOT563 Packaging: Bulk |
auf Bestellung 7955 Stücke: Lieferzeit 10-14 Tag (e) |
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NSBC123JPDXV6T5G | onsemi |
Description: TRANS PREBIAS NPN/PNP 50V SOT563 Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Bulk |
auf Bestellung 88000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSBC123JDXV6T5 | onsemi |
Description: TRANS 2NPN PREBIAS 0.5W SOT563 Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Bulk |
auf Bestellung 119831 Stücke: Lieferzeit 10-14 Tag (e) |
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NSBC123TPDP6T5G | onsemi |
Description: TRANS PREBIAS NPN/PNP 50V SOT963 Supplier Device Package: SOT-963 Resistor - Base (R1): 2.2kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 339mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-963 Packaging: Bulk |
auf Bestellung 261500 Stücke: Lieferzeit 10-14 Tag (e) |
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NSBC123JF3T5G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT1123 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 2.2 kOhms Power - Max: 254 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-1123 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-1123 Packaging: Bulk Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA |
auf Bestellung 288000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSBC123EF3T5G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT1123 Resistor - Emitter Base (R2): 2.2 kOhms Resistor - Base (R1): 2.2 kOhms Power - Max: 254 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-1123 DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-1123 Packaging: Bulk |
auf Bestellung 317000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSBC123EPDXV6T1G | onsemi |
Description: TRANS PREBIAS NPN/PNP 50V SOT563 Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 2.2kOhms Resistor - Base (R1): 2.2kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NSBC123EPDXV6T1G | onsemi |
Description: TRANS PREBIAS NPN/PNP 50V SOT563 Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 2.2kOhms Resistor - Base (R1): 2.2kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NSBC123TF3T5G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT1123 Resistor - Base (R1): 2.2 kOhms Power - Max: 254 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-1123 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-1123 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NSBC123TF3T5G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT1123 Resistor - Base (R1): 2.2 kOhms Power - Max: 254 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-1123 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-1123 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NSBC123TF3T5G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT1123 Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-1123 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-1123 Packaging: Bulk Resistor - Base (R1): 2.2 kOhms Power - Max: 254 mW |
auf Bestellung 208000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSBC123EDXV6T1G | onsemi |
Description: TRANS 2NPN PREBIAS 0.5W SOT563 Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 2.2kOhms Resistor - Base (R1): 2.2kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSBC123EDXV6T1G | onsemi |
Description: TRANS 2NPN PREBIAS 0.5W SOT563 Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 2.2kOhms Resistor - Base (R1): 2.2kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSBC123EDXV6T1 | onsemi |
Description: TRANS 2NPN PREBIAS 0.5W SOT563 Resistor - Emitter Base (R2): 2.2kOhms Resistor - Base (R1): 2.2kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) Supplier Device Package: SOT-563 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NSBC123JDXV6T5G | onsemi |
Description: TRANS PREBIAS 2NPN 50V SOT563 Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BD682S | onsemi |
Description: TRANS PNP DARL 100V 4A TO-126-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 14 W |
auf Bestellung 1284 Stücke: Lieferzeit 10-14 Tag (e) |
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SN74LS374N | onsemi |
Description: IC FF D-TYPE SINGLE 8BIT 20PDIP Packaging: Tube Package / Case: 20-DIP (0.300", 7.62mm) Output Type: Tri-State, Non-Inverted Mounting Type: Through Hole Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.75V ~ 5.25V Current - Quiescent (Iq): 40 mA Current - Output High, Low: 2.6mA, 24mA Trigger Type: Positive Edge Clock Frequency: 50 MHz Supplier Device Package: 20-PDIP Max Propagation Delay @ V, Max CL: 28ns @ 5V, 45pF Number of Bits per Element: 8 |
auf Bestellung 19087 Stücke: Lieferzeit 10-14 Tag (e) |
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LC87FBK08AU-SSOP-H | onsemi |
Description: IC MCU 8BIT 8KB FLASH 24SSOP DigiKey Programmable: Not Verified Number of I/O: 20 Mounting Type: Surface Mount Package / Case: 24-LFSOP (0.173", 4.40mm Width) Packaging: Bulk Supplier Device Package: 24-SSOP Peripherals: LVD, POR, PWM, WDT Connectivity: SIO Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 8x12b Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 256 x 8 Program Memory Size: 8KB (8K x 8) Speed: 12MHz |
auf Bestellung 2710 Stücke: Lieferzeit 10-14 Tag (e) |
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| STK625-520B-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube |
auf Bestellung 12474 Stücke: Lieferzeit 10-14 Tag (e) |
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| STK625-738M-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube |
auf Bestellung 11731 Stücke: Lieferzeit 10-14 Tag (e) |
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| STK625-711B-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube |
auf Bestellung 6842 Stücke: Lieferzeit 10-14 Tag (e) |
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| STK625-720MB-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Bulk |
auf Bestellung 550 Stücke: Lieferzeit 10-14 Tag (e) |
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| STK625-728SG-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Bulk |
auf Bestellung 3868 Stücke: Lieferzeit 10-14 Tag (e) |
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| SN74LS280D |
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Hersteller: onsemi
Description: IC PARITY GEN/CHK 9-BIT 14-SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Number of Circuits: 9-Bit
Mounting Type: Surface Mount
Logic Type: Parity Generator/Checker
Operating Temperature: 0°C ~ 70°C
Current - Output High, Low: 400µA, 8mA
Supplier Device Package: 14-SOIC
Voltage - Supply: 4.75 V ~ 5.25 V
Description: IC PARITY GEN/CHK 9-BIT 14-SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Number of Circuits: 9-Bit
Mounting Type: Surface Mount
Logic Type: Parity Generator/Checker
Operating Temperature: 0°C ~ 70°C
Current - Output High, Low: 400µA, 8mA
Supplier Device Package: 14-SOIC
Voltage - Supply: 4.75 V ~ 5.25 V
auf Bestellung 13259 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 205+ | 2.18 EUR |
| FDPF5N50NZF |
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Hersteller: onsemi
Description: MOSFET N-CH 500V 4.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 2.1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
Description: MOSFET N-CH 500V 4.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 2.1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTD4857NT4G |
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Hersteller: onsemi
Description: MOSFET N-CH 25V 12A/78A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Power Dissipation (Max): 1.31W (Ta), 56.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 12 V
Description: MOSFET N-CH 25V 12A/78A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Power Dissipation (Max): 1.31W (Ta), 56.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTD4857N-1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 25V 12A/78A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Power Dissipation (Max): 1.31W (Ta), 56.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 12 V
Description: MOSFET N-CH 25V 12A/78A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Power Dissipation (Max): 1.31W (Ta), 56.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTD4856NT4G |
|
Hersteller: onsemi
Description: MOSFET N-CH 25V 13.3A/89A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Power Dissipation (Max): 1.33W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2241 pF @ 12 V
Description: MOSFET N-CH 25V 13.3A/89A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Power Dissipation (Max): 1.33W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2241 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTD4856N-1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 25V 13.3A/89A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Power Dissipation (Max): 1.33W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2241 pF @ 12 V
Description: MOSFET N-CH 25V 13.3A/89A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Power Dissipation (Max): 1.33W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2241 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTD4854NT4G |
|
Hersteller: onsemi
Description: MOSFET N-CH 25V 15.7A/128A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V
Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 49.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 12 V
Description: MOSFET N-CH 25V 15.7A/128A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V
Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 49.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FFB10UP20STM |
|
Hersteller: onsemi
Description: DIODE GEN PURP 200V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE GEN PURP 200V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FFB10UP20STM |
|
Hersteller: onsemi
Description: DIODE GEN PURP 200V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE GEN PURP 200V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TL594CD |
|
Hersteller: onsemi
Description: IC REG CTRLR BCK/PSH-PULL 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down, Step-Up/Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Topology: Buck, Push-Pull
Voltage - Supply (Vcc/Vdd): 7V ~ 40V
Supplier Device Package: 16-SOIC
Synchronous Rectifier: Yes
Control Features: Dead Time Control, Frequency Control
Output Phases: 1
Duty Cycle (Max): 96%
Clock Sync: No
Number of Outputs: 2
Description: IC REG CTRLR BCK/PSH-PULL 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down, Step-Up/Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Topology: Buck, Push-Pull
Voltage - Supply (Vcc/Vdd): 7V ~ 40V
Supplier Device Package: 16-SOIC
Synchronous Rectifier: Yes
Control Features: Dead Time Control, Frequency Control
Output Phases: 1
Duty Cycle (Max): 96%
Clock Sync: No
Number of Outputs: 2
Produkt ist nicht verfügbar
Mindestbestellmenge: 48 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SZ1SMB5951BT3G |
|
Hersteller: onsemi
Description: DIODE ZENER 120V 3W SMB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 380 Ohms
Supplier Device Package: SMB
Grade: Automotive
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 91.2 V
Qualification: AEC-Q101
Description: DIODE ZENER 120V 3W SMB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 380 Ohms
Supplier Device Package: SMB
Grade: Automotive
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 91.2 V
Qualification: AEC-Q101
auf Bestellung 9411 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 0.99 EUR |
| 21+ | 0.85 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.42 EUR |
| ISL9V2540S3ST-F085C |
|
Hersteller: onsemi
Description: IGBT 390V 15.5A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.8V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 610ns/3.64µs
Test Condition: 300V, 1kOhm, 5V
Gate Charge: 15.1 nC
Grade: Automotive
Current - Collector (Ic) (Max): 15.5 A
Voltage - Collector Emitter Breakdown (Max): 390 V
Power - Max: 166.7 W
Qualification: AEC-Q101
Description: IGBT 390V 15.5A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.8V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 610ns/3.64µs
Test Condition: 300V, 1kOhm, 5V
Gate Charge: 15.1 nC
Grade: Automotive
Current - Collector (Ic) (Max): 15.5 A
Voltage - Collector Emitter Breakdown (Max): 390 V
Power - Max: 166.7 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CD4021BCCW |
|
Hersteller: onsemi
Description: IC SR PUSH-PULL 8BIT 16-SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 15V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 8
Description: IC SR PUSH-PULL 8BIT 16-SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 15V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM2575D2T-005 |
|
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 286+ | 1.77 EUR |
| LM2575D2T-012G |
|
Hersteller: onsemi
Description: IC REG BUCK 12V 1A D2PAK-5
Output Type: Fixed
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Packaging: Tube
Synchronous Rectifier: No
Supplier Device Package: D2PAK-5
Topology: Buck
Voltage - Input (Max): 40V
Frequency - Switching: 52kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output (Min/Fixed): 12V
Voltage - Input (Min): 4.75V
Description: IC REG BUCK 12V 1A D2PAK-5
Output Type: Fixed
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Packaging: Tube
Synchronous Rectifier: No
Supplier Device Package: D2PAK-5
Topology: Buck
Voltage - Input (Max): 40V
Frequency - Switching: 52kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output (Min/Fixed): 12V
Voltage - Input (Min): 4.75V
auf Bestellung 5897 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 162+ | 3.14 EUR |
| LM2575D2T-015G |
|
Hersteller: onsemi
Description: IC REG BUCK 15V 1A D2PAK-5
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Packaging: Tube
Voltage - Output (Min/Fixed): 15V
Voltage - Input (Min): 4.75V
Synchronous Rectifier: No
Supplier Device Package: D2PAK-5
Topology: Buck
Voltage - Input (Max): 40V
Frequency - Switching: 52kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1A
Function: Step-Down
Description: IC REG BUCK 15V 1A D2PAK-5
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Packaging: Tube
Voltage - Output (Min/Fixed): 15V
Voltage - Input (Min): 4.75V
Synchronous Rectifier: No
Supplier Device Package: D2PAK-5
Topology: Buck
Voltage - Input (Max): 40V
Frequency - Switching: 52kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1A
Function: Step-Down
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 162+ | 3.14 EUR |
| LM2575D2T-12R4 |
|
Hersteller: onsemi
Description: IC REG BUCK 12V 1A D2PAK-5
Voltage - Output (Min/Fixed): 12V
Voltage - Input (Min): 4.75V
Synchronous Rectifier: No
Supplier Device Package: D2PAK-5
Topology: Buck
Voltage - Input (Max): 40V
Frequency - Switching: 52kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Packaging: Bulk
Description: IC REG BUCK 12V 1A D2PAK-5
Voltage - Output (Min/Fixed): 12V
Voltage - Input (Min): 4.75V
Synchronous Rectifier: No
Supplier Device Package: D2PAK-5
Topology: Buck
Voltage - Input (Max): 40V
Frequency - Switching: 52kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Packaging: Bulk
auf Bestellung 275 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 162+ | 3.14 EUR |
| NB7NPQ1402E2MMUTWG |
|
Hersteller: onsemi
Description: NB7NPQ1402E2M - 3.3 V USB 3.1 GE
Signal Conditioning: Input Equalization
Supplier Device Package: 24-UQFN (2.5x2.5)
Data Rate (Max): 10Gbps
Current - Supply: 125mA
Applications: USB
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Input: Differential
Type: Buffer, ReDriver
Output: Differential
Mounting Type: Surface Mount
Number of Channels: 1 x 2:2
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: NB7NPQ1402E2M - 3.3 V USB 3.1 GE
Signal Conditioning: Input Equalization
Supplier Device Package: 24-UQFN (2.5x2.5)
Data Rate (Max): 10Gbps
Current - Supply: 125mA
Applications: USB
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Input: Differential
Type: Buffer, ReDriver
Output: Differential
Mounting Type: Surface Mount
Number of Channels: 1 x 2:2
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 2.1 EUR |
| NB7NPQ1402E2MMUTWG |
|
Hersteller: onsemi
Description: NB7NPQ1402E2M - 3.3 V USB 3.1 GE
Applications: USB
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Input: Differential
Type: Buffer, ReDriver
Output: Differential
Mounting Type: Surface Mount
Number of Channels: 1 x 2:2
Package / Case: 24-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
Signal Conditioning: Input Equalization
Supplier Device Package: 24-UQFN (2.5x2.5)
Data Rate (Max): 10Gbps
Current - Supply: 125mA
Description: NB7NPQ1402E2M - 3.3 V USB 3.1 GE
Applications: USB
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Input: Differential
Type: Buffer, ReDriver
Output: Differential
Mounting Type: Surface Mount
Number of Channels: 1 x 2:2
Package / Case: 24-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
Signal Conditioning: Input Equalization
Supplier Device Package: 24-UQFN (2.5x2.5)
Data Rate (Max): 10Gbps
Current - Supply: 125mA
auf Bestellung 9057 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.51 EUR |
| 10+ | 4.19 EUR |
| 25+ | 3.58 EUR |
| 100+ | 2.89 EUR |
| 250+ | 2.55 EUR |
| 500+ | 2.34 EUR |
| 1000+ | 2.17 EUR |
| 2500+ | 2.1 EUR |
| LC05512Z02XATBG |
Hersteller: onsemi
Description: IC BAT PWR MGMT LI-ION 1C 6WLCSP
Fault Protection: Over Current, Over Temperature
Supplier Device Package: 6-WLCSP (0.85x1.17)
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -40°C ~ 85°C
Function: Power Management
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Description: IC BAT PWR MGMT LI-ION 1C 6WLCSP
Fault Protection: Over Current, Over Temperature
Supplier Device Package: 6-WLCSP (0.85x1.17)
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -40°C ~ 85°C
Function: Power Management
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| LC05511Z04XATBG |
|
Hersteller: onsemi
Description: IC BATT PROT LI-ION 1CELL 6WLCSP
Fault Protection: Over Current, Over Voltage
Supplier Device Package: 6-WLCSP (0.85x1.17)
Battery Chemistry: Lithium Ion
Operating Temperature: -40°C ~ 85°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 6-XFBGA, WLCSP
Packaging: Bulk
Description: IC BATT PROT LI-ION 1CELL 6WLCSP
Fault Protection: Over Current, Over Voltage
Supplier Device Package: 6-WLCSP (0.85x1.17)
Battery Chemistry: Lithium Ion
Operating Temperature: -40°C ~ 85°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 6-XFBGA, WLCSP
Packaging: Bulk
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 989+ | 0.51 EUR |
| LC05111C21MTTTG |
|
Hersteller: onsemi
Description: IC BATT PROT LI-ION 1CELL 6WDFN
Fault Protection: Over Current
Supplier Device Package: 6-WDFN (4x2.6), Dual Flag
Battery Chemistry: Lithium Ion
Operating Temperature: -40°C ~ 85°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Description: IC BATT PROT LI-ION 1CELL 6WDFN
Fault Protection: Over Current
Supplier Device Package: 6-WDFN (4x2.6), Dual Flag
Battery Chemistry: Lithium Ion
Operating Temperature: -40°C ~ 85°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LC05711A01RATBG |
auf Bestellung 30500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 233+ | 2.18 EUR |
| LC05732A01RATBG |
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 221+ | 2.3 EUR |
| LC05711A91RATBG |
|
auf Bestellung 110000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 233+ | 2.18 EUR |
| LC05732A91RATBG |
|
auf Bestellung 95000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 221+ | 2.3 EUR |
| FDMF6820C |
|
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 50A 40PQFN
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: DrMOS, Power MOSFET
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Description: IC HALF BRIDGE DRIVER 50A 40PQFN
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: DrMOS, Power MOSFET
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMF6820C |
|
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 50A 40PQFN
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: DrMOS, Power MOSFET
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Description: IC HALF BRIDGE DRIVER 50A 40PQFN
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: DrMOS, Power MOSFET
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
auf Bestellung 2064 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.69 EUR |
| 10+ | 4.63 EUR |
| 100+ | 3.4 EUR |
| 500+ | 2.86 EUR |
| 1000+ | 2.85 EUR |
| FDMF6820B |
|
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 55A 40PQFN
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 16V
Technology: DrMOS
Current - Output / Channel: 55A
Applications: Synchronous Buck Converters
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Description: IC HALF BRIDGE DRIVER 55A 40PQFN
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 16V
Technology: DrMOS
Current - Output / Channel: 55A
Applications: Synchronous Buck Converters
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMF6820B |
|
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 55A 40PQFN
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 16V
Technology: DrMOS
Current - Output / Channel: 55A
Applications: Synchronous Buck Converters
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Cut Tape (CT)
Description: IC HALF BRIDGE DRIVER 55A 40PQFN
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 16V
Technology: DrMOS
Current - Output / Channel: 55A
Applications: Synchronous Buck Converters
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZSM24T1G |
|
Hersteller: onsemi
Description: TVS DIODE 24VWM 43VC SOT233
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 43V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 43VC SOT233
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 43V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUN5231T1G |
|
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SC70-3
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 202 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70-3 (SOT323)
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Description: TRANS PREBIAS NPN 50V SC70-3
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 202 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70-3 (SOT323)
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
auf Bestellung 137057 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10969+ | 0.051 EUR |
| NSBC123JDXV6T1G |
|
Hersteller: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS 2NPN 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.12 EUR |
| 8000+ | 0.11 EUR |
| 20000+ | 0.1 EUR |
| 28000+ | 0.096 EUR |
| 40000+ | 0.092 EUR |
| NSBC123EPDXV6T1 |
|
Hersteller: onsemi
Description: TRANS PREBIAS NPN/PNP SOT563
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 2.2kOhms
Resistor - Base (R1): 2.2kOhms
Description: TRANS PREBIAS NPN/PNP SOT563
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 2.2kOhms
Resistor - Base (R1): 2.2kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBC123JPDXV6T5 |
|
auf Bestellung 7955 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7955+ | 0.084 EUR |
| NSBC123JPDXV6T5G |
|
Hersteller: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Bulk
Description: TRANS PREBIAS NPN/PNP 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Bulk
auf Bestellung 88000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5413+ | 0.1 EUR |
| NSBC123JDXV6T5 |
|
Hersteller: onsemi
Description: TRANS 2NPN PREBIAS 0.5W SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Bulk
Description: TRANS 2NPN PREBIAS 0.5W SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Bulk
auf Bestellung 119831 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4438+ | 0.12 EUR |
| NSBC123TPDP6T5G |
|
Hersteller: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT963
Supplier Device Package: SOT-963
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 339mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-963
Packaging: Bulk
Description: TRANS PREBIAS NPN/PNP 50V SOT963
Supplier Device Package: SOT-963
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 339mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-963
Packaging: Bulk
auf Bestellung 261500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3847+ | 0.14 EUR |
| NSBC123JF3T5G |
|
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 254 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Bulk
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Description: TRANS PREBIAS NPN 50V SOT1123
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 254 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Bulk
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
auf Bestellung 288000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3527+ | 0.15 EUR |
| NSBC123EF3T5G |
|
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 254 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Bulk
Description: TRANS PREBIAS NPN 50V SOT1123
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 254 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Bulk
auf Bestellung 317000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3297+ | 0.15 EUR |
| NSBC123EPDXV6T1G |
|
Hersteller: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 2.2kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN/PNP 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 2.2kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NSBC123EPDXV6T1G |
|
Hersteller: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT563
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 2.2kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Description: TRANS PREBIAS NPN/PNP 50V SOT563
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 2.2kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBC123TF3T5G |
|
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Resistor - Base (R1): 2.2 kOhms
Power - Max: 254 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN 50V SOT1123
Resistor - Base (R1): 2.2 kOhms
Power - Max: 254 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBC123TF3T5G |
|
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Resistor - Base (R1): 2.2 kOhms
Power - Max: 254 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 50V SOT1123
Resistor - Base (R1): 2.2 kOhms
Power - Max: 254 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBC123TF3T5G |
|
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Bulk
Resistor - Base (R1): 2.2 kOhms
Power - Max: 254 mW
Description: TRANS PREBIAS NPN 50V SOT1123
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Bulk
Resistor - Base (R1): 2.2 kOhms
Power - Max: 254 mW
auf Bestellung 208000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3602+ | 0.14 EUR |
| NSBC123EDXV6T1G |
|
Hersteller: onsemi
Description: TRANS 2NPN PREBIAS 0.5W SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 2.2kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: TRANS 2NPN PREBIAS 0.5W SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 2.2kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.12 EUR |
| 8000+ | 0.11 EUR |
| 20000+ | 0.1 EUR |
| NSBC123EDXV6T1G |
|
Hersteller: onsemi
Description: TRANS 2NPN PREBIAS 0.5W SOT563
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 2.2kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Description: TRANS 2NPN PREBIAS 0.5W SOT563
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 2.2kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 29+ | 0.62 EUR |
| NSBC123EDXV6T1 |
|
Hersteller: onsemi
Description: TRANS 2NPN PREBIAS 0.5W SOT563
Resistor - Emitter Base (R2): 2.2kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-563
Description: TRANS 2NPN PREBIAS 0.5W SOT563
Resistor - Emitter Base (R2): 2.2kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBC123JDXV6T5G |
|
Hersteller: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS 2NPN 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD682S |
|
Hersteller: onsemi
Description: TRANS PNP DARL 100V 4A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 14 W
Description: TRANS PNP DARL 100V 4A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 14 W
auf Bestellung 1284 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 998+ | 0.45 EUR |
| SN74LS374N |
|
Hersteller: onsemi
Description: IC FF D-TYPE SINGLE 8BIT 20PDIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Tri-State, Non-Inverted
Mounting Type: Through Hole
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Current - Quiescent (Iq): 40 mA
Current - Output High, Low: 2.6mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 50 MHz
Supplier Device Package: 20-PDIP
Max Propagation Delay @ V, Max CL: 28ns @ 5V, 45pF
Number of Bits per Element: 8
Description: IC FF D-TYPE SINGLE 8BIT 20PDIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Tri-State, Non-Inverted
Mounting Type: Through Hole
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Current - Quiescent (Iq): 40 mA
Current - Output High, Low: 2.6mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 50 MHz
Supplier Device Package: 20-PDIP
Max Propagation Delay @ V, Max CL: 28ns @ 5V, 45pF
Number of Bits per Element: 8
auf Bestellung 19087 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 330+ | 1.37 EUR |
| LC87FBK08AU-SSOP-H |
|
Hersteller: onsemi
Description: IC MCU 8BIT 8KB FLASH 24SSOP
DigiKey Programmable: Not Verified
Number of I/O: 20
Mounting Type: Surface Mount
Package / Case: 24-LFSOP (0.173", 4.40mm Width)
Packaging: Bulk
Supplier Device Package: 24-SSOP
Peripherals: LVD, POR, PWM, WDT
Connectivity: SIO
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x12b
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 256 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 12MHz
Description: IC MCU 8BIT 8KB FLASH 24SSOP
DigiKey Programmable: Not Verified
Number of I/O: 20
Mounting Type: Surface Mount
Package / Case: 24-LFSOP (0.173", 4.40mm Width)
Packaging: Bulk
Supplier Device Package: 24-SSOP
Peripherals: LVD, POR, PWM, WDT
Connectivity: SIO
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x12b
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 256 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 12MHz
auf Bestellung 2710 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 181+ | 2.8 EUR |
| STK625-520B-E |
auf Bestellung 12474 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 28+ | 18.39 EUR |
| STK625-738M-E |
auf Bestellung 11731 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 24.4 EUR |
| STK625-711B-E |
auf Bestellung 6842 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 24.4 EUR |
| STK625-720MB-E |
auf Bestellung 550 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 31.71 EUR |
| STK625-728SG-E |
auf Bestellung 3868 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 32.67 EUR |