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FQP3N60 Fairchild Semiconductor

Name: FQP3N60
Brand: Fairchild Semiconductor
SKU: 11524252-3
Price: 500.7600000000001 EUR
Availability: InStock

FAIRS06228-1.pdf?t.download=true&u=5oefqw

Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V

auf Bestellung 45287 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
468+	1.07 EUR

Mindestbestellmenge: 468

Im Einkaufswagen Stück im Wert von UAH

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Technische Details FQP3N60 Fairchild Semiconductor

Description: MOSFET N-CH 600V 3A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.5A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V.

Weitere Produktangebote FQP3N60

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FQP3N60			auf Bestellung 87090 Stücke: Lieferzeit 21-28 Tag (e)	Im Einkaufswagen Stück im Wert von UAH
FQP3N60	Hersteller : ON Semiconductor	Trans MOSFET N-CH 600V 3A 3-Pin(3+Tab) TO-220 Rail	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
FQP3N60	Hersteller : onsemi	Description: MOSFET N-CH 600V 3A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.5A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH