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SZBZX84C18ET1G SZBZX84C18ET1G ONSEMI BZX84CxxET1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
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FODM2701 FODM2701 ONSEMI FODM2701.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 40V
Mounting: SMD
Case: Mini-flat 4pin
Turn-off time: 3µs
Number of channels: 1
Max. off-state voltage: 6V
Collector-emitter voltage: 40V
CTR@If: 50-300%@5mA
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-on time: 3µs
auf Bestellung 1781 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
165+0.43 EUR
188+0.38 EUR
Mindestbestellmenge: 112
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BD682G BD682G ONSEMI BD682G.PDF Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 4A; 40W; TO225
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 40W
Case: TO225
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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2SC6097-TL-E 2SC6097-TL-E ONSEMI 2sc6097-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 0.8W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Collector current: 3A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 300...600
Frequency: 390MHz
Polarisation: bipolar
Type of transistor: NPN
auf Bestellung 700 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.37 EUR
71+1.01 EUR
117+0.61 EUR
250+0.51 EUR
500+0.46 EUR
700+0.43 EUR
Mindestbestellmenge: 53
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2SC3646S-TD-E 2SC3646S-TD-E ONSEMI 2sa1416jp-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89
Mounting: SMD
Case: SOT89
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 100V
Current gain: 140...280
Frequency: 120MHz
Polarisation: bipolar
Type of transistor: NPN
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
147+0.49 EUR
204+0.35 EUR
500+0.29 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
MC14549BDWR2G ONSEMI MC14549B-D.pdf Category: Shift registers
Description: IC: digital; register; Ch: 1; CMOS; SMD; SO16WB; HEF4000B; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: register
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SO16WB
Family: HEF4000B
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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QSD123 QSD123 ONSEMI QSD123.PDF Category: Phototransistors
Description: Phototransistor; THT; 5mm; λp max: 880nm; 30V; 24°
LED lens: black with IR filter
Mounting: THT
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Viewing angle: 24°
Collector-emitter voltage: 30V
auf Bestellung 603 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
200+0.36 EUR
266+0.27 EUR
307+0.23 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
BC848BLT3G BC848BLT3G ONSEMI BC846ALT1G.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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NSVBC848BWT1G ONSEMI bc846awt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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MBRA160T3G MBRA160T3G ONSEMI MBRA160T3G.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.475V
Max. load current: 2.1A
Kind of package: reel; tape
auf Bestellung 4493 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
272+0.26 EUR
300+0.24 EUR
368+0.19 EUR
404+0.18 EUR
506+0.14 EUR
1000+0.13 EUR
2000+0.11 EUR
Mindestbestellmenge: 218
Im Einkaufswagen  Stück im Wert von  UAH
SPZT2222AT1G ONSEMI pzt2222at1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: tape
Frequency: 300MHz
Application: automotive industry
Produkt ist nicht verfügbar
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MMBZ18VALT1G MMBZ18VALT1G ONSEMI MMBZ_ser.PDF Category: Protection diodes - arrays
Description: Diode: TVS array; 18V; 1.6A; 40W; double,common anode; SOT23; Ch: 2
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Leakage current: 50nA
Number of channels: 2
Tolerance: ±5%
Max. forward impulse current: 1.6A
Max. off-state voltage: 14.5V
Breakdown voltage: 18V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Case: SOT23
Version: ESD
auf Bestellung 5645 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
1064+0.067 EUR
1573+0.045 EUR
1839+0.039 EUR
2213+0.032 EUR
2500+0.029 EUR
2778+0.026 EUR
3000+0.025 EUR
Mindestbestellmenge: 715
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SZMMBZ18VALT1G ONSEMI mmbz5v6alt1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 18V; 1.6A; 40W; double,common anode; SOT23; Ch: 2
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Max. forward impulse current: 1.6A
Max. off-state voltage: 14.5V
Breakdown voltage: 18V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Case: SOT23
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LM2902N LM2902N ONSEMI LM2902.pdf Category: THT operational amplifiers
Description: IC: operational amplifier; Ch: 4; ±1.5÷16VDC,3÷32VDC; DIP14; 10mV
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP14
Input offset voltage: 10mV
Kind of package: tube
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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SZBZX84C18ET1G BZX84CxxET1G.PDF
SZBZX84C18ET1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FODM2701 FODM2701.pdf
FODM2701
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 40V
Mounting: SMD
Case: Mini-flat 4pin
Turn-off time: 3µs
Number of channels: 1
Max. off-state voltage: 6V
Collector-emitter voltage: 40V
CTR@If: 50-300%@5mA
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-on time: 3µs
auf Bestellung 1781 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
165+0.43 EUR
188+0.38 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
BD682G BD682G.PDF
BD682G
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 4A; 40W; TO225
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 40W
Case: TO225
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC6097-TL-E 2sc6097-d.pdf
2SC6097-TL-E
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 0.8W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Collector current: 3A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 300...600
Frequency: 390MHz
Polarisation: bipolar
Type of transistor: NPN
auf Bestellung 700 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.37 EUR
71+1.01 EUR
117+0.61 EUR
250+0.51 EUR
500+0.46 EUR
700+0.43 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
2SC3646S-TD-E 2sa1416jp-d.pdf
2SC3646S-TD-E
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89
Mounting: SMD
Case: SOT89
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 100V
Current gain: 140...280
Frequency: 120MHz
Polarisation: bipolar
Type of transistor: NPN
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
147+0.49 EUR
204+0.35 EUR
500+0.29 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
MC14549BDWR2G MC14549B-D.pdf
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; register; Ch: 1; CMOS; SMD; SO16WB; HEF4000B; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: register
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SO16WB
Family: HEF4000B
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
QSD123 QSD123.PDF
QSD123
Hersteller: ONSEMI
Category: Phototransistors
Description: Phototransistor; THT; 5mm; λp max: 880nm; 30V; 24°
LED lens: black with IR filter
Mounting: THT
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Viewing angle: 24°
Collector-emitter voltage: 30V
auf Bestellung 603 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
200+0.36 EUR
266+0.27 EUR
307+0.23 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
BC848BLT3G BC846ALT1G.PDF
BC848BLT3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVBC848BWT1G bc846awt1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBRA160T3G MBRA160T3G.PDF
MBRA160T3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.475V
Max. load current: 2.1A
Kind of package: reel; tape
auf Bestellung 4493 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
272+0.26 EUR
300+0.24 EUR
368+0.19 EUR
404+0.18 EUR
506+0.14 EUR
1000+0.13 EUR
2000+0.11 EUR
Mindestbestellmenge: 218
Im Einkaufswagen  Stück im Wert von  UAH
SPZT2222AT1G pzt2222at1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: tape
Frequency: 300MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ18VALT1G MMBZ_ser.PDF
MMBZ18VALT1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 18V; 1.6A; 40W; double,common anode; SOT23; Ch: 2
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Leakage current: 50nA
Number of channels: 2
Tolerance: ±5%
Max. forward impulse current: 1.6A
Max. off-state voltage: 14.5V
Breakdown voltage: 18V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Case: SOT23
Version: ESD
auf Bestellung 5645 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
1064+0.067 EUR
1573+0.045 EUR
1839+0.039 EUR
2213+0.032 EUR
2500+0.029 EUR
2778+0.026 EUR
3000+0.025 EUR
Mindestbestellmenge: 715
Im Einkaufswagen  Stück im Wert von  UAH
SZMMBZ18VALT1G mmbz5v6alt1-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 18V; 1.6A; 40W; double,common anode; SOT23; Ch: 2
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Max. forward impulse current: 1.6A
Max. off-state voltage: 14.5V
Breakdown voltage: 18V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Case: SOT23
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LM2902N LM2902.pdf
LM2902N
Hersteller: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; Ch: 4; ±1.5÷16VDC,3÷32VDC; DIP14; 10mV
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP14
Input offset voltage: 10mV
Kind of package: tube
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 236 472 708 944 1180 1416 1652 1888 2124 2360 2362 2363 2364 2365 2366 2367