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FDB024N04AL7 FDB024N04AL7 onsemi fdb024n04al7-d.pdf Description: MOSFET N-CH 40V 100A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
Produkt ist nicht verfügbar
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NXH200B100H4F2SG NXH200B100H4F2SG onsemi nxh200b100h4f2-d.pdf Description: 1500V F2 BOOST FOR SOLAR PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: 36-PIM (56.7x48)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 93 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 6.523 nF @ 20 V
auf Bestellung 37 Stücke:
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NXH200B100H4F2SG-R onsemi nxh200b100h4f2-d.pdf Description: 1500V F2 BOOST FOR SOLAR PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: 36-PIM (56.7x48)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 93 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 6523 pF @ 20 V
auf Bestellung 20 Stücke:
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LE2464DXATBG onsemi Description: IC EEPROM 64KBIT I2C 1MHZ 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 6-WLCSP (1.2x0.80)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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NFL25065L4BT onsemi nfl25065l4bt-d.pdf Description: 2PHASE PFC
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.370", 34.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 2 Phase
Voltage - Isolation: 2500Vrms
Current: 50 A
Voltage: 650 V
Produkt ist nicht verfügbar
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SZ1SMB5940BT3G SZ1SMB5940BT3G onsemi 1SMB5913BT3-D.PDF Description: DIODE ZENER 43V 3W SMB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 53 Ohms
Supplier Device Package: SMB
Grade: Automotive
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 32.7 V
Qualification: AEC-Q101
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2500+0.46 EUR
5000+0.44 EUR
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SZ1SMB5940BT3G SZ1SMB5940BT3G onsemi 1SMB5913BT3-D.PDF Description: DIODE ZENER 43V 3W SMB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 53 Ohms
Supplier Device Package: SMB
Grade: Automotive
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 32.7 V
Qualification: AEC-Q101
auf Bestellung 7491 Stücke:
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17+1.06 EUR
100+0.73 EUR
500+0.61 EUR
1000+0.52 EUR
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1N5940BRLG 1N5940BRLG onsemi 1n5913b-d.pdf Description: DIODE ZENER 43V 3W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 53 Ohms
Supplier Device Package: Axial
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 32.7 V
auf Bestellung 8863 Stücke:
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NCL30081ASNT1G NCL30081ASNT1G onsemi ncl30081-d.pdf Description: IC LED DRIVER OFFLINE 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 6-TSOP
Voltage - Supply (Min): 8.8V
Voltage - Supply (Max): 20V
Produkt ist nicht verfügbar
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NRVUS2JA NRVUS2JA onsemi us2aa-d.pdf Description: DIODE GEN PURP 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NRVUS2JA NRVUS2JA onsemi us2aa-d.pdf Description: DIODE GEN PURP 600V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FMBA56 FMBA56 onsemi fmba56-d.pdf Description: TRANS PNP 80V 0.5A SUPERSOT-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SuperSOT™-6
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 700 mW
Produkt ist nicht verfügbar
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FMBA56 FMBA56 onsemi fmba56-d.pdf Description: TRANS PNP 80V 0.5A SUPERSOT-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SuperSOT™-6
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 700 mW
Produkt ist nicht verfügbar
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MC74HC573ADTR2G-Q MC74HC573ADTR2G-Q onsemi mc74hc573a-d.pdf Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-TSSOP
auf Bestellung 2500 Stücke:
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2500+0.42 EUR
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ESD7124MUTBG ESD7124MUTBG onsemi esd7124-d.pdf Description: TVS DIODE 3.3VWM 12VWM 6UDFN
Packaging: Bulk
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max), 12V (Max)
Supplier Device Package: 6-UDFN (1.8x2)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V, 13.3V
Voltage - Clamping (Max) @ Ipp: 9.5V, 15V
Power Line Protection: No
auf Bestellung 4680000 Stücke:
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FFSH10120A-F085 FFSH10120A-F085 onsemi ffsh10120a-f085-d.pdf Description: DIODE SIL CARB 1.2KV 17A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 612pF @ 1V, 100kHz
Current - Average Rectified (Io): 17A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 896 Stücke:
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2+13.52 EUR
30+8.39 EUR
120+7.22 EUR
510+7.05 EUR
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NTHL020N090SC1 NTHL020N090SC1 onsemi nthl020n090sc1-d.pdf Description: SICFET N-CH 900V 118A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V
Power Dissipation (Max): 503W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V
auf Bestellung 3724 Stücke:
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1+46.02 EUR
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NVHL020N090SC1 NVHL020N090SC1 onsemi nvhl020n090sc1-d.pdf Description: SICFET N-CH 900V 118A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V
Power Dissipation (Max): 503W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V
Qualification: AEC-Q101
auf Bestellung 168 Stücke:
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1+52.98 EUR
30+38.61 EUR
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UF4005 UF4005 onsemi uf4007-d.pdf Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 15000 Stücke:
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UF4005 UF4005 onsemi uf4007-d.pdf Description: DIODE STANDARD 600V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 17131 Stücke:
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26+0.69 EUR
38+0.46 EUR
100+0.32 EUR
500+0.24 EUR
1000+0.21 EUR
2000+0.19 EUR
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UF4002 UF4002 onsemi uf4007-d.pdf Description: DIODE STANDARD 100V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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UF4002 UF4002 onsemi uf4007-d.pdf Description: DIODE STANDARD 100V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 9337 Stücke:
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UF4003 UF4003 onsemi uf4007-d.pdf Description: DIODE STANDARD 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 20000 Stücke:
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UF4003 UF4003 onsemi uf4007-d.pdf Description: DIODE STANDARD 200V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 24935 Stücke:
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29+0.62 EUR
45+0.39 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.21 EUR
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MC74ACT540M MC74ACT540M onsemi ONSMS11697-1.pdf?t.download=true&u=5oefqw Description: IC INVERTER 8-INPUT 20SOEIAJ
Packaging: Bulk
auf Bestellung 5030 Stücke:
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1567+0.31 EUR
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MC74HC244ADTR2G-Q MC74HC244ADTR2G-Q onsemi mc74hc244a-d.pdf Description: IC BUFFER NON-INVERT 6V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-TSSOP
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2500+0.44 EUR
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NCV7815BTG NCV7815BTG onsemi mc7800-d.pdf Description: IC REG LINEAR 15V 1A TO220
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 15V
Grade: Automotive
PSRR: 58dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Qualification: AEC-Q100
auf Bestellung 9408 Stücke:
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854+0.54 EUR
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MC7818ACTG MC7818ACTG onsemi mc7800-d.pdf Description: IC REG LINEAR 18V 1A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 18V
PSRR: 57dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
auf Bestellung 1733 Stücke:
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854+0.58 EUR
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NSVBCH817-40LT1G NSVBCH817-40LT1G onsemi bch817-16lt1-d.pdf Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
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ESD7351P2T5G ESD7351P2T5G onsemi esd7351-d.pdf Description: TVS DIODE 3.3VWM SOD923
Packaging: Bulk
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.43pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Power Line Protection: No
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FDMS8558S FDMS8558S onsemi fdms8558s-d.pdf Description: MOSFET N-CH 25V 33A/90A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5118 pF @ 13 V
Produkt ist nicht verfügbar
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FDMS8558S FDMS8558S onsemi fdms8558s-d.pdf Description: MOSFET N-CH 25V 33A/90A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5118 pF @ 13 V
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NLAS3799BMUR2G NLAS3799BMUR2G onsemi nlas3799b-d.pdf Description: IC SWITCH DPDTX2 400MOHM 16UQFN
Packaging: Bulk
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 400mOhm
-3db Bandwidth: 19MHz
Supplier Device Package: 16-UQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Charge Injection: 51pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 3pF
Current - Leakage (IS(off)) (Max): 500nA
Number of Circuits: 2
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NLAS3799MNR2G NLAS3799MNR2G onsemi nlas3799-d.pdf Description: IC SWITCH DPDTX2 400MOHM 16WQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 400mOhm
-3db Bandwidth: 19MHz
Supplier Device Package: 16-WQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 3.6V
Charge Injection: 42pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 3pF
Current - Leakage (IS(off)) (Max): 500nA
Number of Circuits: 2
Produkt ist nicht verfügbar
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NLAS3799LMNR2G NLAS3799LMNR2G onsemi nlas3799-d.pdf Description: IC SWITCH DPDTX2 400MOHM 16WQFN
Packaging: Bulk
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 400mOhm
-3db Bandwidth: 19MHz
Supplier Device Package: 16-WQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 3.6V
Charge Injection: 42pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 3pF
Current - Leakage (IS(off)) (Max): 500nA
Number of Circuits: 2
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NLAS3799BMNR2G NLAS3799BMNR2G onsemi nlas3799b-d.pdf Description: IC SWITCH DPDTX2 400MOHM 16WQFN
Packaging: Bulk
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 400mOhm
-3db Bandwidth: 19MHz
Supplier Device Package: 16-WQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Charge Injection: 51pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 3pF
Current - Leakage (IS(off)) (Max): 500nA
Number of Circuits: 2
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NLAS3799BLMNR2G NLAS3799BLMNR2G onsemi nlas3799b-d.pdf Description: IC SWITCH DPDTX2 400MOHM 16WQFN
Packaging: Bulk
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 400mOhm
-3db Bandwidth: 19MHz
Supplier Device Package: 16-WQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Charge Injection: 51pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 3pF
Current - Leakage (IS(off)) (Max): 500nA
Number of Circuits: 2
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FFP04S60STU FFP04S60STU onsemi FFP04S60S.pdf Description: DIODE GEN PURP 600V 4A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 4 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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FFPF04S60STU FFPF04S60STU onsemi FFPF04S60S.pdf Description: DIODE AVALANCHE 600V 4A TO220F2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 4 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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NB3N15552MNG NB3N15552MNG onsemi NB3Nyyyyy-VCXO.pdf Description: IC CLK GEN VCXO LVPECL 20QFN
Packaging: Tube
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 155.52MHz
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 20-QFN (4x4)
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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NB3N15625MNG NB3N15625MNG onsemi NB3Nyyyyy-VCXO.pdf Description: IC CLK GEN VCXO LVPECL 20QFN
Packaging: Tube
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 156.25MHz
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 20-QFN (4x4)
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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MBRB3045CT-1G MBRB3045CT-1G onsemi mbr3045-d.pdf Description: DIODE ARRAY SCHOTT 45V 15A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-262 (I2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
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MBRB30H30CT-1G MBRB30H30CT-1G onsemi mbrb30h30ct-1-d.pdf Description: DIODE ARR SCHOTT 30V 15A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-262 (I2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 30 V
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MC74F174D MC74F174D onsemi MOTOS12549-1.pdf?t.download=true&u=5oefqw Description: FLIP FLOP D TYPE BUS INTERFACE P
Packaging: Bulk
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MC74F174DR2 MC74F174DR2 onsemi MOTOS12549-1.pdf?t.download=true&u=5oefqw Description: FLIP FLOP D TYPE BUS INTERFACE P
Packaging: Bulk
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SFT1446-TL-H SFT1446-TL-H onsemi SFT1446.pdf Description: MOSFET N-CH 60V 20A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Produkt ist nicht verfügbar
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SFT1446-TL-H SFT1446-TL-H onsemi SFT1446.pdf Description: MOSFET N-CH 60V 20A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Produkt ist nicht verfügbar
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CPH3456-TL-H CPH3456-TL-H onsemi cph3456-d.pdf Description: MOSFET N-CH 20V 3.5A 3CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: 3-CPH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V
Produkt ist nicht verfügbar
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SFT1446-H SFT1446-H onsemi SFT1446.pdf Description: MOSFET N-CH 60V 20A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: IPAK/TP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Produkt ist nicht verfügbar
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MC74HCT245ADTR2G-Q MC74HCT245ADTR2G-Q onsemi mc74hc245a-d.pdf Description: IC TXRX NON-INVERT 5.5V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-TSSOP
Produkt ist nicht verfügbar
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AR0230CSSC12SUEA0-DR onsemi AR0230CS_Datasheet.pdf Description: IMAGE SENSOR 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 80-LBGA
Supplier Device Package: 80-IBGA (10x10)
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AR0237SRSH12SHRA0-DR AR0237SRSH12SHRA0-DR onsemi ar0237sr?pdf=Y Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 48-mPLCC (11.43x11.43)
Frames per Second: 60.0
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AR0237IRSH12SPRA0-DR AR0237IRSH12SPRA0-DR onsemi AR0237_RGB-IR.pdf Description: IMAGE SENSOR 2MP 1/3 CIS SO
Packaging: Tray
Type: CMOS
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1080V
Frames per Second: 30.0
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AR0221SR2C00SUEA0-DRBR onsemi AR0221.pdf Description: IMAGE SENSOR CMOS IBGA-87
Packaging: Tray
Package / Case: 87-LBGA
Type: CMOS
Pixel Size: 4.2µm x 4.2µm
Active Pixel Array: 1928H x 1080V
Supplier Device Package: 87-IBGA (12x9)
Frames per Second: 60.0
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AR0233ATSC17XUEA1-DRBR onsemi AR0233AT.pdf Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 80-LBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 2048H x 1280V
Supplier Device Package: 80-IBGA (10x10)
Frames per Second: 60.0
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AR0233ATSC17XUEA1-TRBR onsemi AR0233AT.pdf Description: 2MP 1/3 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 80-LBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 2048H x 1280V
Supplier Device Package: 80-IBGA (10x10)
Frames per Second: 60.0
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AR0233ATSC17XUEA1-TRBR onsemi AR0233AT.pdf Description: 2MP 1/3 CIS SO
Packaging: Cut Tape (CT)
Package / Case: 80-LBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 2048H x 1280V
Supplier Device Package: 80-IBGA (10x10)
Frames per Second: 60.0
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NTMS4937NR2G NTMS4937NR2G onsemi ntms4937n-d.pdf Description: MOSFET N-CH 30V 8.6A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 810mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2563 pF @ 25 V
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LM431AIMX LM431AIMX onsemi lm431a-d.pdf Description: IC VREF SHUNT ADJ 2% 8SOIC
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Produkt ist nicht verfügbar
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LM431AIMX LM431AIMX onsemi lm431a-d.pdf Description: IC VREF SHUNT ADJ 2% 8SOIC
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Produkt ist nicht verfügbar
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FDB024N04AL7 fdb024n04al7-d.pdf
FDB024N04AL7
Hersteller: onsemi
Description: MOSFET N-CH 40V 100A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
Produkt ist nicht verfügbar
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NXH200B100H4F2SG nxh200b100h4f2-d.pdf
NXH200B100H4F2SG
Hersteller: onsemi
Description: 1500V F2 BOOST FOR SOLAR PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: 36-PIM (56.7x48)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 93 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 6.523 nF @ 20 V
auf Bestellung 37 Stücke:
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Anzahl Preis
1+233.15 EUR
20+205.02 EUR
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NXH200B100H4F2SG-R nxh200b100h4f2-d.pdf
Hersteller: onsemi
Description: 1500V F2 BOOST FOR SOLAR PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: 36-PIM (56.7x48)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 93 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 6523 pF @ 20 V
auf Bestellung 20 Stücke:
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Anzahl Preis
1+287.81 EUR
20+274.13 EUR
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LE2464DXATBG
Hersteller: onsemi
Description: IC EEPROM 64KBIT I2C 1MHZ 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 6-WLCSP (1.2x0.80)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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NFL25065L4BT nfl25065l4bt-d.pdf
Hersteller: onsemi
Description: 2PHASE PFC
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.370", 34.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 2 Phase
Voltage - Isolation: 2500Vrms
Current: 50 A
Voltage: 650 V
Produkt ist nicht verfügbar
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SZ1SMB5940BT3G 1SMB5913BT3-D.PDF
SZ1SMB5940BT3G
Hersteller: onsemi
Description: DIODE ZENER 43V 3W SMB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 53 Ohms
Supplier Device Package: SMB
Grade: Automotive
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 32.7 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.46 EUR
5000+0.44 EUR
Mindestbestellmenge: 2500
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SZ1SMB5940BT3G 1SMB5913BT3-D.PDF
SZ1SMB5940BT3G
Hersteller: onsemi
Description: DIODE ZENER 43V 3W SMB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 53 Ohms
Supplier Device Package: SMB
Grade: Automotive
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 32.7 V
Qualification: AEC-Q101
auf Bestellung 7491 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
17+1.06 EUR
100+0.73 EUR
500+0.61 EUR
1000+0.52 EUR
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1N5940BRLG 1n5913b-d.pdf
1N5940BRLG
Hersteller: onsemi
Description: DIODE ZENER 43V 3W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 53 Ohms
Supplier Device Package: Axial
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 32.7 V
auf Bestellung 8863 Stücke:
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Anzahl Preis
2637+0.18 EUR
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NCL30081ASNT1G ncl30081-d.pdf
NCL30081ASNT1G
Hersteller: onsemi
Description: IC LED DRIVER OFFLINE 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 6-TSOP
Voltage - Supply (Min): 8.8V
Voltage - Supply (Max): 20V
Produkt ist nicht verfügbar
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NRVUS2JA us2aa-d.pdf
NRVUS2JA
Hersteller: onsemi
Description: DIODE GEN PURP 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NRVUS2JA us2aa-d.pdf
NRVUS2JA
Hersteller: onsemi
Description: DIODE GEN PURP 600V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FMBA56 fmba56-d.pdf
FMBA56
Hersteller: onsemi
Description: TRANS PNP 80V 0.5A SUPERSOT-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SuperSOT™-6
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 700 mW
Produkt ist nicht verfügbar
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FMBA56 fmba56-d.pdf
FMBA56
Hersteller: onsemi
Description: TRANS PNP 80V 0.5A SUPERSOT-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SuperSOT™-6
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 700 mW
Produkt ist nicht verfügbar
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MC74HC573ADTR2G-Q mc74hc573a-d.pdf
MC74HC573ADTR2G-Q
Hersteller: onsemi
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-TSSOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.42 EUR
Mindestbestellmenge: 2500
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ESD7124MUTBG esd7124-d.pdf
ESD7124MUTBG
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 12VWM 6UDFN
Packaging: Bulk
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max), 12V (Max)
Supplier Device Package: 6-UDFN (1.8x2)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V, 13.3V
Voltage - Clamping (Max) @ Ipp: 9.5V, 15V
Power Line Protection: No
auf Bestellung 4680000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
811+0.61 EUR
Mindestbestellmenge: 811
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FFSH10120A-F085 ffsh10120a-f085-d.pdf
FFSH10120A-F085
Hersteller: onsemi
Description: DIODE SIL CARB 1.2KV 17A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 612pF @ 1V, 100kHz
Current - Average Rectified (Io): 17A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 896 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.52 EUR
30+8.39 EUR
120+7.22 EUR
510+7.05 EUR
Mindestbestellmenge: 2
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NTHL020N090SC1 nthl020n090sc1-d.pdf
NTHL020N090SC1
Hersteller: onsemi
Description: SICFET N-CH 900V 118A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V
Power Dissipation (Max): 503W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V
auf Bestellung 3724 Stücke:
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Anzahl Preis
1+46.02 EUR
30+29.82 EUR
120+28.56 EUR
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NVHL020N090SC1 nvhl020n090sc1-d.pdf
NVHL020N090SC1
Hersteller: onsemi
Description: SICFET N-CH 900V 118A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V
Power Dissipation (Max): 503W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V
Qualification: AEC-Q101
auf Bestellung 168 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+52.98 EUR
30+38.61 EUR
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UF4005 uf4007-d.pdf
UF4005
Hersteller: onsemi
Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.13 EUR
15000+0.12 EUR
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UF4005 uf4007-d.pdf
UF4005
Hersteller: onsemi
Description: DIODE STANDARD 600V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 17131 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
38+0.46 EUR
100+0.32 EUR
500+0.24 EUR
1000+0.21 EUR
2000+0.19 EUR
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UF4002 uf4007-d.pdf
UF4002
Hersteller: onsemi
Description: DIODE STANDARD 100V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.14 EUR
Mindestbestellmenge: 5000
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UF4002 uf4007-d.pdf
UF4002
Hersteller: onsemi
Description: DIODE STANDARD 100V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 9337 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
85+0.21 EUR
100+0.18 EUR
500+0.17 EUR
Mindestbestellmenge: 53
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UF4003 uf4007-d.pdf
UF4003
Hersteller: onsemi
Description: DIODE STANDARD 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.19 EUR
10000+0.18 EUR
15000+0.17 EUR
Mindestbestellmenge: 5000
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UF4003 uf4007-d.pdf
UF4003
Hersteller: onsemi
Description: DIODE STANDARD 200V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 24935 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
45+0.39 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.21 EUR
Mindestbestellmenge: 29
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MC74ACT540M ONSMS11697-1.pdf?t.download=true&u=5oefqw
MC74ACT540M
Hersteller: onsemi
Description: IC INVERTER 8-INPUT 20SOEIAJ
Packaging: Bulk
auf Bestellung 5030 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1567+0.31 EUR
Mindestbestellmenge: 1567
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MC74HC244ADTR2G-Q mc74hc244a-d.pdf
MC74HC244ADTR2G-Q
Hersteller: onsemi
Description: IC BUFFER NON-INVERT 6V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-TSSOP
auf Bestellung 42500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.44 EUR
Mindestbestellmenge: 2500
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NCV7815BTG mc7800-d.pdf
NCV7815BTG
Hersteller: onsemi
Description: IC REG LINEAR 15V 1A TO220
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 15V
Grade: Automotive
PSRR: 58dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Qualification: AEC-Q100
auf Bestellung 9408 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
854+0.54 EUR
Mindestbestellmenge: 854
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MC7818ACTG mc7800-d.pdf
MC7818ACTG
Hersteller: onsemi
Description: IC REG LINEAR 18V 1A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 18V
PSRR: 57dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
auf Bestellung 1733 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
854+0.58 EUR
Mindestbestellmenge: 854
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NSVBCH817-40LT1G bch817-16lt1-d.pdf
NSVBCH817-40LT1G
Hersteller: onsemi
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
auf Bestellung 56300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
80+0.22 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 56
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ESD7351P2T5G esd7351-d.pdf
ESD7351P2T5G
Hersteller: onsemi
Description: TVS DIODE 3.3VWM SOD923
Packaging: Bulk
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.43pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Power Line Protection: No
auf Bestellung 769276 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2686+0.17 EUR
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FDMS8558S fdms8558s-d.pdf
FDMS8558S
Hersteller: onsemi
Description: MOSFET N-CH 25V 33A/90A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5118 pF @ 13 V
Produkt ist nicht verfügbar
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FDMS8558S fdms8558s-d.pdf
FDMS8558S
Hersteller: onsemi
Description: MOSFET N-CH 25V 33A/90A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5118 pF @ 13 V
Produkt ist nicht verfügbar
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NLAS3799BMUR2G nlas3799b-d.pdf
NLAS3799BMUR2G
Hersteller: onsemi
Description: IC SWITCH DPDTX2 400MOHM 16UQFN
Packaging: Bulk
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 400mOhm
-3db Bandwidth: 19MHz
Supplier Device Package: 16-UQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Charge Injection: 51pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 3pF
Current - Leakage (IS(off)) (Max): 500nA
Number of Circuits: 2
auf Bestellung 11354 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
296+1.69 EUR
Mindestbestellmenge: 296
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NLAS3799MNR2G nlas3799-d.pdf
NLAS3799MNR2G
Hersteller: onsemi
Description: IC SWITCH DPDTX2 400MOHM 16WQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 400mOhm
-3db Bandwidth: 19MHz
Supplier Device Package: 16-WQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 3.6V
Charge Injection: 42pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 3pF
Current - Leakage (IS(off)) (Max): 500nA
Number of Circuits: 2
Produkt ist nicht verfügbar
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NLAS3799LMNR2G nlas3799-d.pdf
NLAS3799LMNR2G
Hersteller: onsemi
Description: IC SWITCH DPDTX2 400MOHM 16WQFN
Packaging: Bulk
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 400mOhm
-3db Bandwidth: 19MHz
Supplier Device Package: 16-WQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 3.6V
Charge Injection: 42pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 3pF
Current - Leakage (IS(off)) (Max): 500nA
Number of Circuits: 2
auf Bestellung 227051 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
278+1.81 EUR
Mindestbestellmenge: 278
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NLAS3799BMNR2G nlas3799b-d.pdf
NLAS3799BMNR2G
Hersteller: onsemi
Description: IC SWITCH DPDTX2 400MOHM 16WQFN
Packaging: Bulk
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 400mOhm
-3db Bandwidth: 19MHz
Supplier Device Package: 16-WQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Charge Injection: 51pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 3pF
Current - Leakage (IS(off)) (Max): 500nA
Number of Circuits: 2
auf Bestellung 26143 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
278+1.81 EUR
Mindestbestellmenge: 278
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NLAS3799BLMNR2G nlas3799b-d.pdf
NLAS3799BLMNR2G
Hersteller: onsemi
Description: IC SWITCH DPDTX2 400MOHM 16WQFN
Packaging: Bulk
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 400mOhm
-3db Bandwidth: 19MHz
Supplier Device Package: 16-WQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Charge Injection: 51pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 3pF
Current - Leakage (IS(off)) (Max): 500nA
Number of Circuits: 2
auf Bestellung 12733 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
278+1.81 EUR
Mindestbestellmenge: 278
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FFP04S60STU FFP04S60S.pdf
FFP04S60STU
Hersteller: onsemi
Description: DIODE GEN PURP 600V 4A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 4 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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FFPF04S60STU FFPF04S60S.pdf
FFPF04S60STU
Hersteller: onsemi
Description: DIODE AVALANCHE 600V 4A TO220F2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 4 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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NB3N15552MNG NB3Nyyyyy-VCXO.pdf
NB3N15552MNG
Hersteller: onsemi
Description: IC CLK GEN VCXO LVPECL 20QFN
Packaging: Tube
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 155.52MHz
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 20-QFN (4x4)
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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NB3N15625MNG NB3Nyyyyy-VCXO.pdf
NB3N15625MNG
Hersteller: onsemi
Description: IC CLK GEN VCXO LVPECL 20QFN
Packaging: Tube
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 156.25MHz
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 20-QFN (4x4)
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 2091 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
68+7.21 EUR
Mindestbestellmenge: 68
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MBRB3045CT-1G mbr3045-d.pdf
MBRB3045CT-1G
Hersteller: onsemi
Description: DIODE ARRAY SCHOTT 45V 15A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-262 (I2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
auf Bestellung 37431 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
584+0.83 EUR
Mindestbestellmenge: 584
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MBRB30H30CT-1G mbrb30h30ct-1-d.pdf
MBRB30H30CT-1G
Hersteller: onsemi
Description: DIODE ARR SCHOTT 30V 15A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-262 (I2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 30 V
Produkt ist nicht verfügbar
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MC74F174D MOTOS12549-1.pdf?t.download=true&u=5oefqw
MC74F174D
Hersteller: onsemi
Description: FLIP FLOP D TYPE BUS INTERFACE P
Packaging: Bulk
auf Bestellung 12678 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2664+0.18 EUR
Mindestbestellmenge: 2664
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MC74F174DR2 MOTOS12549-1.pdf?t.download=true&u=5oefqw
MC74F174DR2
Hersteller: onsemi
Description: FLIP FLOP D TYPE BUS INTERFACE P
Packaging: Bulk
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2664+0.18 EUR
Mindestbestellmenge: 2664
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SFT1446-TL-H SFT1446.pdf
SFT1446-TL-H
Hersteller: onsemi
Description: MOSFET N-CH 60V 20A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Produkt ist nicht verfügbar
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SFT1446-TL-H SFT1446.pdf
SFT1446-TL-H
Hersteller: onsemi
Description: MOSFET N-CH 60V 20A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Produkt ist nicht verfügbar
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CPH3456-TL-H cph3456-d.pdf
CPH3456-TL-H
Hersteller: onsemi
Description: MOSFET N-CH 20V 3.5A 3CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: 3-CPH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V
Produkt ist nicht verfügbar
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SFT1446-H SFT1446.pdf
SFT1446-H
Hersteller: onsemi
Description: MOSFET N-CH 60V 20A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: IPAK/TP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Produkt ist nicht verfügbar
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MC74HCT245ADTR2G-Q mc74hc245a-d.pdf
MC74HCT245ADTR2G-Q
Hersteller: onsemi
Description: IC TXRX NON-INVERT 5.5V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-TSSOP
Produkt ist nicht verfügbar
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AR0230CSSC12SUEA0-DR AR0230CS_Datasheet.pdf
Hersteller: onsemi
Description: IMAGE SENSOR 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 80-LBGA
Supplier Device Package: 80-IBGA (10x10)
auf Bestellung 2396 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.46 EUR
5+26.92 EUR
10+25.98 EUR
25+25.23 EUR
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AR0237SRSH12SHRA0-DR ar0237sr?pdf=Y
AR0237SRSH12SHRA0-DR
Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 48-mPLCC (11.43x11.43)
Frames per Second: 60.0
auf Bestellung 5679 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.26 EUR
5+19.34 EUR
10+18.63 EUR
25+17.78 EUR
50+17.55 EUR
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AR0237IRSH12SPRA0-DR AR0237_RGB-IR.pdf
AR0237IRSH12SPRA0-DR
Hersteller: onsemi
Description: IMAGE SENSOR 2MP 1/3 CIS SO
Packaging: Tray
Type: CMOS
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1080V
Frames per Second: 30.0
auf Bestellung 1444 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.58 EUR
5+20.56 EUR
10+19.81 EUR
25+18.92 EUR
50+18.31 EUR
100+17.75 EUR
500+17.71 EUR
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AR0221SR2C00SUEA0-DRBR AR0221.pdf
Hersteller: onsemi
Description: IMAGE SENSOR CMOS IBGA-87
Packaging: Tray
Package / Case: 87-LBGA
Type: CMOS
Pixel Size: 4.2µm x 4.2µm
Active Pixel Array: 1928H x 1080V
Supplier Device Package: 87-IBGA (12x9)
Frames per Second: 60.0
auf Bestellung 2159 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+43.88 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AR0233ATSC17XUEA1-DRBR AR0233AT.pdf
Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 80-LBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 2048H x 1280V
Supplier Device Package: 80-IBGA (10x10)
Frames per Second: 60.0
auf Bestellung 6258 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+68.83 EUR
5+63.33 EUR
10+61.28 EUR
25+58.83 EUR
40+57.67 EUR
210+54.10 EUR
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AR0233ATSC17XUEA1-TRBR AR0233AT.pdf
Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 80-LBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 2048H x 1280V
Supplier Device Package: 80-IBGA (10x10)
Frames per Second: 60.0
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+48.66 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
AR0233ATSC17XUEA1-TRBR AR0233AT.pdf
Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Cut Tape (CT)
Package / Case: 80-LBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 2048H x 1280V
Supplier Device Package: 80-IBGA (10x10)
Frames per Second: 60.0
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+66.60 EUR
5+60.01 EUR
10+57.65 EUR
25+54.90 EUR
50+53.06 EUR
100+51.42 EUR
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NTMS4937NR2G ntms4937n-d.pdf
NTMS4937NR2G
Hersteller: onsemi
Description: MOSFET N-CH 30V 8.6A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 810mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2563 pF @ 25 V
auf Bestellung 191045 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
419+1.17 EUR
Mindestbestellmenge: 419
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LM431AIMX lm431a-d.pdf
LM431AIMX
Hersteller: onsemi
Description: IC VREF SHUNT ADJ 2% 8SOIC
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LM431AIMX lm431a-d.pdf
LM431AIMX
Hersteller: onsemi
Description: IC VREF SHUNT ADJ 2% 8SOIC
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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