| Anzahl | Preis |
|---|---|
| 1+ | 3.71 EUR |
| 10+ | 2.39 EUR |
| 100+ | 1.64 EUR |
| 500+ | 1.31 EUR |
| 1000+ | 1.2 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVMJS1D7N04CTWG onsemi
Description: MOSFET N-CH 40V 35A/185A 8LFPAK, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: 8-LFPAK, Vgs(th) (Max) @ Id: 3.5V @ 130µA, Power Dissipation (Max): 3.8W (Ta), 106W (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1205, 8-LFPAK56, Packaging: Tape & Reel (TR).
Weitere Produktangebote NVMJS1D7N04CTWG nach Preis ab 1.29 EUR bis 3.73 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NVMJS1D7N04CTWG | onsemi |
 Description: MOSFET N-CH 40V 35A/185A 8LFPAKQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 3.5V @ 130µA Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Cut Tape (CT) |
auf Bestellung 2913 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NVMJS1D7N04CTWG |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 35A/185A 8LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 35A/185A 8LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
auf Bestellung 2913 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.73 EUR |
| 10+ | 2.4 EUR |
| 100+ | 1.64 EUR |
| 500+ | 1.31 EUR |
| 1000+ | 1.29 EUR |