NVD5890NT4G-VF01 onsemi

Description: POWER MOSFET 40V, 123A, 3.7 MOHM, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 4W (Ta), 107W (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk.