| Anzahl | Preis |
|---|---|
| 1+ | 8.25 EUR |
| 10+ | 5.4 EUR |
| 100+ | 4.01 EUR |
| 500+ | 3.36 EUR |
| 1000+ | 2.94 EUR |
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Technische Details NTP125N60S5H onsemi
Description: SF5 600V FAST 125MOHM WITH TO-22, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V, Power Dissipation (Max): 152W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 2.1mA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 37.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2036 pF @ 400 V.
Weitere Produktangebote NTP125N60S5H
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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NTP125N60S5H | onsemi |
 Description: SF5 600V FAST 125MOHM WITH TO-22Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V Power Dissipation (Max): 152W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 2.1mA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 37.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2036 pF @ 400 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NTP125N60S5H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 77A; 152W; TO220-3 Polarisation: unipolar Gate charge: 37.3nC On-state resistance: 0.125Ω Drain current: 22A Gate-source voltage: ±30V Power dissipation: 152W Pulsed drain current: 77A Case: TO220-3 Drain-source voltage: 600V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTP125N60S5H |
|
Hersteller: onsemi
Description: SF5 600V FAST 125MOHM WITH TO-22
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 152W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2036 pF @ 400 V
Description: SF5 600V FAST 125MOHM WITH TO-22
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 152W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2036 pF @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTP125N60S5H |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 77A; 152W; TO220-3
Polarisation: unipolar
Gate charge: 37.3nC
On-state resistance: 0.125Ω
Drain current: 22A
Gate-source voltage: ±30V
Power dissipation: 152W
Pulsed drain current: 77A
Case: TO220-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 77A; 152W; TO220-3
Polarisation: unipolar
Gate charge: 37.3nC
On-state resistance: 0.125Ω
Drain current: 22A
Gate-source voltage: ±30V
Power dissipation: 152W
Pulsed drain current: 77A
Case: TO220-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH