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NCP1589BMNTXG ONSEMI ncp1589a-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN10; buck; 4.5÷13.2VDC
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: 0...70°C
Output current: 1.5A
Operating voltage: 4.5...13.2V DC
Type of integrated circuit: PMIC
Frequency: 540...660kHz
Topology: buck
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NCP1589DMNTWG ONSEMI ncp1589d-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN10; buck; 4.5÷13.2VDC
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: 0...95°C
Output current: 1.5A
Operating voltage: 4.5...13.2V DC
Type of integrated circuit: PMIC
Frequency: 200...500kHz
Topology: buck
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NCP51530BMNTWG ONSEMI ncp51530-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN10; -3÷3.5A; 700V
Mounting: SMD
Case: DFN10
Operating temperature: -40...125°C
Output current: -3...3.5A
Pulse fall time: 15ns
Impulse rise time: 15ns
Supply voltage: 10...17V DC
Voltage class: 700V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
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NTF3055L108T1G NTF3055L108T1G ONSEMI NTF3055L108.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Pulsed drain current: 9A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
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102+0.83 EUR
120+0.71 EUR
128+0.67 EUR
200+0.63 EUR
250+0.61 EUR
500+0.55 EUR
1000+0.54 EUR
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LM2576D2TR4-012G LM2576D2TR4-012G ONSEMI lm2576-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
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1N5927BRLG 1N5927BRLG ONSEMI 1N59xxB.pdf Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; CASE59; single diode; reel,tape; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N59xxB
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280+0.31 EUR
459+0.19 EUR
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MMSZ5266BT1G MMSZ5266BT1G ONSEMI MMSZ52xxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 68V; SMD; SOD123; reel,tape; single diode
Mounting: SMD
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 68V
Manufacturer series: MMSZ52xxB
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NTMJS0D9N04CLTWG ONSEMI Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 83W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS5C410NLAFT1G ONSEMI nvmfs5c410nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Gate charge: 143nC
Drain current: 330A
Kind of channel: enhancement
Drain-source voltage: 40V
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN5
On-state resistance: 820µΩ
Pulsed drain current: 900A
Power dissipation: 83W
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NVMJS0D9N04CLTWG ONSEMI nvmjs0d9n04cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 83W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC14528BDG MC14528BDG ONSEMI MC14528B-D.pdf Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of inputs: 3
Kind of package: tube
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125+0.69 EUR
150+0.57 EUR
168+0.51 EUR
186+0.45 EUR
196+0.44 EUR
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74VHC123AMTCX 74VHC123AMTCX ONSEMI 74VHC123A.pdf Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Operating temperature: -40...85°C
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74VHC123AMX 74VHC123AMX ONSEMI 74VHC123A.pdf Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SO16
Manufacturer series: VHC
Operating temperature: -40...85°C
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MOC3082M MOC3082M ONSEMI MOC3083M.pdf Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
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MOC3082SR2VM MOC3082SR2VM ONSEMI MOC3082SR2VM.pdf Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: Gull wing 6
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
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101+0.84 EUR
108+0.8 EUR
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MOC3082SM ONSEMI moc3083m-d.pdf de93284-moc308x-100622.pdf FAIR-S-A0001584002-1.pdf?t.download=true&u=5oefqw Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
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MOC3082SR2M ONSEMI moc3083m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: reel; tape
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MOC3082SVM ONSEMI FAIR-S-A0001584002-1.pdf?t.download=true&u=5oefqw moc3083m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
Conform to the norm: VDE
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MOC3082TVM ONSEMI FAIR-S-A0001584002-1.pdf?t.download=true&u=5oefqw moc3083m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
Conform to the norm: VDE
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MOC3082VM ONSEMI moc3083m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
Conform to the norm: VDE
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BCV72 BCV72 ONSEMI BCV72.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
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NRVBB40L45CTT4G ONSEMI mbr40l45ct-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.68V
Max. load current: 20A
Max. forward impulse current: 200A
Kind of package: reel; tape
Application: automotive industry
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NSS40501UW3T2G ONSEMI nss40501uw3-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 40V
Power dissipation: 1.5W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Case: WDFN3
Frequency: 150MHz
Collector current: 5A
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NSS40500UW3T2G ONSEMI nss40500uw3-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry
Mounting: SMD
Kind of package: reel; tape
Case: WDFN3
Collector current: 5A
Collector-emitter voltage: 40V
Power dissipation: 1.5W
Polarisation: bipolar
Application: automotive industry
Type of transistor: PNP
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MBRS3100T3G MBRS3100T3G ONSEMI MBRS3100T3G-DTE.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Kind of package: reel; tape
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174+0.49 EUR
194+0.44 EUR
236+0.36 EUR
249+0.35 EUR
500+0.31 EUR
1000+0.29 EUR
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FDS4470 FDS4470 ONSEMI fds4470-d.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.5A; 2.5W; SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
On-state resistance: 14mΩ
Power dissipation: 2.5W
Gate-source voltage: ±20V
Drain current: 12.5A
Drain-source voltage: 40V
Case: SO8
Kind of package: reel; tape
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41+2.11 EUR
46+1.87 EUR
100+1.71 EUR
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MBRF2545CTG MBRF2545CTG ONSEMI mbrf2545ct-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 12.5Ax2; TO220FP; tube
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.62V
Max. off-state voltage: 45V
Load current: 12.5A x2
Max. load current: 25A
Max. forward impulse current: 150A
Case: TO220FP
Kind of package: tube
Semiconductor structure: common cathode; double
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32+2.74 EUR
38+2.3 EUR
43+1.99 EUR
54+1.58 EUR
63+1.36 EUR
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SS39 SS39 ONSEMI SS32_SS39.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 90V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 90V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 100A
Kind of package: reel; tape
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94+0.9 EUR
101+0.84 EUR
112+0.76 EUR
135+0.63 EUR
250+0.61 EUR
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SBAT54CTT1G SBAT54CTT1G ONSEMI bat54ctt1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC70; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SC70
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
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FDS2582 FDS2582 ONSEMI FDS2582.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86202 ONSEMI fdms86202-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 64A; Idm: 240A; 156W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 64A
Pulsed drain current: 240A
Power dissipation: 156W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.2mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86202ET120 ONSEMI fdms86202et120-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 538A; 187W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 72A
Pulsed drain current: 538A
Power dissipation: 187W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.2mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
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H11G2M H11G2M ONSEMI H11G2M.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Mounting: THT
Number of channels: 1
Collector-emitter voltage: 80V
CTR@If: 100%@10mA
Insulation voltage: 4.17kV
Case: DIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
auf Bestellung 267 Stücke:
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105+0.81 EUR
126+0.68 EUR
148+0.57 EUR
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MJF45H11G MJF45H11G ONSEMI MJF44H11G-DTE.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP
Case: TO220FP
Mounting: THT
Collector-emitter voltage: 80V
Power dissipation: 50W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 60
Kind of package: tube
Frequency: 40MHz
Collector current: 10A
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41+2.11 EUR
53+1.62 EUR
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H11G1SR2M H11G1SR2M ONSEMI H11G1SR2M.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: Gull wing 6
Collector-emitter voltage: 100V
CTR@If: 100%@10mA
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H11G2SR2M ONSEMI H11G1M-D.PDF Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Manufacturer series: H11G_
Mounting: THT
Number of channels: 1
Max. off-state voltage: 6V
Collector-emitter voltage: 80V
CTR@If: 1000%@10mA
Insulation voltage: 4.17kV
Case: PDIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
Turn-on time: 5µs
Turn-off time: 0.1ms
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MJB45H11G ONSEMI mjb44h11-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Power dissipation: 50W
Current gain: 60
Collector-emitter voltage: 80V
Polarisation: bipolar
Case: D2PAK
Type of transistor: PNP
Kind of package: tube
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NXH020U90MNF2PTG ONSEMI NXH020U90MNF2PTG.PDF Category: Transistor modules
Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 900V
Drain current: 149A
Case: PIM20
Topology: NTC thermistor; Vienna Rectifier
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 447A
Power dissipation: 352W
Technology: SiC
Gate-source voltage: -8...18V
Kind of package: in-tray
Mechanical mounting: screw
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NXH003P120M3F2PTHG ONSEMI nxh003p120m3f2pthg-d.pdf Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 350A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 5.88mΩ
Drain current: 350A
Pulsed drain current: 700A
Drain-source voltage: 1.2kV
Power dissipation: 979W
Topology: MOSFET half-bridge
Kind of package: in-tray
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NXH004P120M3F2PTNG ONSEMI nxh004p120m3f2ptng-d.pdf Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 338A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 7.5mΩ
Drain current: 338A
Pulsed drain current: 676A
Drain-source voltage: 1.2kV
Power dissipation: 1098W
Topology: MOSFET half-bridge
Kind of package: in-tray
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NXH003P120M3F2PTNG ONSEMI nxh003p120m3f2ptng-d.pdf Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 435A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 5.88mΩ
Drain current: 435A
Pulsed drain current: 870A
Drain-source voltage: 1.2kV
Power dissipation: 1482W
Topology: MOSFET half-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
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NXH006P120M3F2PTHG ONSEMI nxh006p120m3f2-d.pdf Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 191A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 14.6mΩ
Drain current: 191A
Pulsed drain current: 382A
Drain-source voltage: 1.2kV
Power dissipation: 556W
Topology: MOSFET half-bridge
Kind of package: in-tray
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NXH004P120M3F2PTHG ONSEMI nxh004p120m3f2pthg-d.pdf Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 284A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 7.5mΩ
Drain current: 284A
Pulsed drain current: 568A
Drain-source voltage: 1.2kV
Power dissipation: 785W
Topology: MOSFET half-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
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NXH006P120MNF2PTG ONSEMI nxh006p120mnf2-d.pdf Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 304A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -15...25V
On-state resistance: 7.28mΩ
Drain current: 304A
Pulsed drain current: 912A
Drain-source voltage: 1.2kV
Power dissipation: 950W
Topology: MOSFET half-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 20 Stücke
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NXH007F120M3F2PTHG ONSEMI nxh007f120m3f2-d.pdf Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 149A; PIM34; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM34
Gate-source voltage: -10...22V
On-state resistance: 15.9mΩ
Drain current: 149A
Pulsed drain current: 447A
Drain-source voltage: 1.2kV
Power dissipation: 353W
Topology: H-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 20 Stücke
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NXH008T120M3F2PTHG ONSEMI nxh008t120m3f2-d.pdf Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 127A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM29
Gate-source voltage: -10...22V
On-state resistance: 15mΩ
Drain current: 127A
Pulsed drain current: 387A
Drain-source voltage: 1.2kV
Power dissipation: 371W
Topology: 3-level inverter TNPC
Kind of package: in-tray
Produkt ist nicht verfügbar
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NXH011F120M3F2PTHG ONSEMI nxh011f120m3f2pt-d.pdf Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 105A; PIM34; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM34
Gate-source voltage: -10...22V
On-state resistance: 21.9mΩ
Drain current: 105A
Pulsed drain current: 316A
Drain-source voltage: 1.2kV
Power dissipation: 244W
Topology: H-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
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NXH011T120M3F2PTHG ONSEMI nxh011t120m3f2-d.pdf Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 91A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM29
Gate-source voltage: -10...22V
On-state resistance: 28.1mΩ
Drain current: 91A
Pulsed drain current: 273A
Drain-source voltage: 1.2kV
Power dissipation: 272W
Topology: 3-level inverter TNPC
Kind of package: in-tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 20 Stücke
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NXH400N100H4Q2F2PG ONSEMI nxh400n100h4q2f2-d.pdf Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 400A; PIM42
Type of semiconductor module: IGBT
Semiconductor structure: SiC diode/transistor
Max. off-state voltage: 1kV
Collector current: 400A
Case: PIM42
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Mechanical mounting: screw
Technology: SiC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 36 Stücke
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4N35SVM ONSEMI 4n37m-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Collector-emitter voltage: 30V
Case: SMD6
Turn-on time: 2µs
Turn-off time: 2µs
Max. off-state voltage: 6V
Number of pins: 6
Manufacturer series: 4N35
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1000+0.26 EUR
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MC33269DTRK-5.0G MC33269DTRK-5.0G ONSEMI MC33269.PDF description Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.8A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Tolerance: ±1%
Manufacturer series: MC33269
Input voltage: 1.35...10V
Voltage drop: 1.1V
Operating temperature: -40...125°C
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MC33269DT-3.3G MC33269DT-3.3G ONSEMI MC33269.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Tolerance: ±1%
Manufacturer series: MC33269
Input voltage: 1.35...10V
Voltage drop: 1.1V
Operating temperature: -40...125°C
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MC33269D-3.3G MC33269D-3.3G ONSEMI MC33269.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SO8; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: SO8
Mounting: SMD
Kind of package: tube
Number of channels: 1
Tolerance: ±1%
Manufacturer series: MC33269
Input voltage: 1.35...10V
Voltage drop: 1.1V
Operating temperature: -40...125°C
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MC33269DR2G MC33269DR2G ONSEMI MC33269.PDF Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷18.65V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...18.65V
Output current: 0.8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Tolerance: ±1%
Manufacturer series: MC33269
Input voltage: 1.35...10V
Voltage drop: 1.1V
Operating temperature: -40...125°C
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MC33269ST-3.3T3G MC33269ST-3.3T3G ONSEMI mc33269-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC33269DR2-3.3G MC33269DR2-3.3G ONSEMI mc33269-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC33269T-3.3G MC33269T-3.3G ONSEMI mc33269-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220AB; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: TO220AB
Mounting: THT
Kind of package: tube
Number of channels: 1
Produkt ist nicht verfügbar
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MC33269DR2-5.0G MC33269DR2-5.0G ONSEMI mc33269-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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GBPC2501 ONSEMI GBPCxx.PDF Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 25A
Version: square
Kind of package: bulk
Case: GBPC
Type of bridge rectifier: single-phase
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.1V
Leads: connectors FASTON
Max. off-state voltage: 0.1kV
Electrical mounting: THT
Load current: 25A
Produkt ist nicht verfügbar
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GBPC2501W ONSEMI GBPCxx.PDF Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 25A
Version: square
Kind of package: bulk
Case: GBPC-W
Type of bridge rectifier: single-phase
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.1V
Leads: wire Ø 1.0mm
Max. off-state voltage: 0.1kV
Electrical mounting: THT
Load current: 25A
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NCP1589BMNTXG ncp1589a-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN10; buck; 4.5÷13.2VDC
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: 0...70°C
Output current: 1.5A
Operating voltage: 4.5...13.2V DC
Type of integrated circuit: PMIC
Frequency: 540...660kHz
Topology: buck
Produkt ist nicht verfügbar
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NCP1589DMNTWG ncp1589d-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN10; buck; 4.5÷13.2VDC
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: 0...95°C
Output current: 1.5A
Operating voltage: 4.5...13.2V DC
Type of integrated circuit: PMIC
Frequency: 200...500kHz
Topology: buck
Produkt ist nicht verfügbar
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NCP51530BMNTWG ncp51530-d.pdf
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN10; -3÷3.5A; 700V
Mounting: SMD
Case: DFN10
Operating temperature: -40...125°C
Output current: -3...3.5A
Pulse fall time: 15ns
Impulse rise time: 15ns
Supply voltage: 10...17V DC
Voltage class: 700V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
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NTF3055L108T1G NTF3055L108.PDF
NTF3055L108T1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Pulsed drain current: 9A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
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73+1.18 EUR
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LM2576D2TR4-012G lm2576-d.pdf
LM2576D2TR4-012G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
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1N5927BRLG 1N59xxB.pdf
1N5927BRLG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; CASE59; single diode; reel,tape; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N59xxB
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MMSZ5266BT1G MMSZ52xxT1G.PDF
MMSZ5266BT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 68V; SMD; SOD123; reel,tape; single diode
Mounting: SMD
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 68V
Manufacturer series: MMSZ52xxB
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NTMJS0D9N04CLTWG
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 83W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFS5C410NLAFT1G nvmfs5c410nl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Gate charge: 143nC
Drain current: 330A
Kind of channel: enhancement
Drain-source voltage: 40V
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN5
On-state resistance: 820µΩ
Pulsed drain current: 900A
Power dissipation: 83W
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NVMJS0D9N04CLTWG nvmjs0d9n04cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 83W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC14528BDG MC14528B-D.pdf
MC14528BDG
Hersteller: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of inputs: 3
Kind of package: tube
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87+0.99 EUR
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150+0.57 EUR
168+0.51 EUR
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196+0.44 EUR
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74VHC123AMTCX 74VHC123A.pdf
74VHC123AMTCX
Hersteller: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Operating temperature: -40...85°C
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74VHC123AMX 74VHC123A.pdf
74VHC123AMX
Hersteller: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SO16
Manufacturer series: VHC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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MOC3082M MOC3083M.pdf
MOC3082M
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
Produkt ist nicht verfügbar
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MOC3082SR2VM MOC3082SR2VM.pdf
MOC3082SR2VM
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: Gull wing 6
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
65+1.31 EUR
101+0.84 EUR
108+0.8 EUR
Mindestbestellmenge: 65 Stücke
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MOC3082SM moc3083m-d.pdf de93284-moc308x-100622.pdf FAIR-S-A0001584002-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
Produkt ist nicht verfügbar
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MOC3082SR2M moc3083m-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MOC3082SVM FAIR-S-A0001584002-1.pdf?t.download=true&u=5oefqw moc3083m-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
Conform to the norm: VDE
Produkt ist nicht verfügbar
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MOC3082TVM FAIR-S-A0001584002-1.pdf?t.download=true&u=5oefqw moc3083m-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
Conform to the norm: VDE
Produkt ist nicht verfügbar
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MOC3082VM moc3083m-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
Conform to the norm: VDE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCV72 BCV72.pdf
BCV72
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NRVBB40L45CTT4G mbr40l45ct-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.68V
Max. load current: 20A
Max. forward impulse current: 200A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NSS40501UW3T2G nss40501uw3-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 40V
Power dissipation: 1.5W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Case: WDFN3
Frequency: 150MHz
Collector current: 5A
Produkt ist nicht verfügbar
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NSS40500UW3T2G nss40500uw3-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry
Mounting: SMD
Kind of package: reel; tape
Case: WDFN3
Collector current: 5A
Collector-emitter voltage: 40V
Power dissipation: 1.5W
Polarisation: bipolar
Application: automotive industry
Type of transistor: PNP
Produkt ist nicht verfügbar
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MBRS3100T3G MBRS3100T3G-DTE.PDF
MBRS3100T3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Kind of package: reel; tape
auf Bestellung 1377 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
120+0.71 EUR
174+0.49 EUR
194+0.44 EUR
236+0.36 EUR
249+0.35 EUR
500+0.31 EUR
1000+0.29 EUR
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FDS4470 description fds4470-d.pdf
FDS4470
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.5A; 2.5W; SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
On-state resistance: 14mΩ
Power dissipation: 2.5W
Gate-source voltage: ±20V
Drain current: 12.5A
Drain-source voltage: 40V
Case: SO8
Kind of package: reel; tape
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
36+2.38 EUR
41+2.11 EUR
46+1.87 EUR
100+1.71 EUR
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MBRF2545CTG mbrf2545ct-d.pdf
MBRF2545CTG
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 12.5Ax2; TO220FP; tube
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.62V
Max. off-state voltage: 45V
Load current: 12.5A x2
Max. load current: 25A
Max. forward impulse current: 150A
Case: TO220FP
Kind of package: tube
Semiconductor structure: common cathode; double
auf Bestellung 591 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
32+2.74 EUR
38+2.3 EUR
43+1.99 EUR
54+1.58 EUR
63+1.36 EUR
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SS39 SS32_SS39.pdf
SS39
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 90V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 90V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 100A
Kind of package: reel; tape
auf Bestellung 2735 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
85+1 EUR
94+0.9 EUR
101+0.84 EUR
112+0.76 EUR
135+0.63 EUR
250+0.61 EUR
Mindestbestellmenge: 85 Stücke
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SBAT54CTT1G bat54ctt1-d.pdf
SBAT54CTT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC70; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SC70
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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FDS2582 FDS2582.pdf
FDS2582
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
4+21.28 EUR
Mindestbestellmenge: 4 Stücke
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FDMS86202 fdms86202-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 64A; Idm: 240A; 156W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 64A
Pulsed drain current: 240A
Power dissipation: 156W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.2mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS86202ET120 fdms86202et120-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 538A; 187W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 72A
Pulsed drain current: 538A
Power dissipation: 187W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.2mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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H11G2M H11G2M.pdf
H11G2M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Mounting: THT
Number of channels: 1
Collector-emitter voltage: 80V
CTR@If: 100%@10mA
Insulation voltage: 4.17kV
Case: DIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
auf Bestellung 267 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
81+1.06 EUR
105+0.81 EUR
126+0.68 EUR
148+0.57 EUR
Mindestbestellmenge: 81 Stücke
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MJF45H11G MJF44H11G-DTE.PDF
MJF45H11G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP
Case: TO220FP
Mounting: THT
Collector-emitter voltage: 80V
Power dissipation: 50W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 60
Kind of package: tube
Frequency: 40MHz
Collector current: 10A
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
33+2.64 EUR
41+2.11 EUR
53+1.62 EUR
Mindestbestellmenge: 33 Stücke
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H11G1SR2M H11G1SR2M.pdf
H11G1SR2M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: Gull wing 6
Collector-emitter voltage: 100V
CTR@If: 100%@10mA
Produkt ist nicht verfügbar
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H11G2SR2M H11G1M-D.PDF
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Manufacturer series: H11G_
Mounting: THT
Number of channels: 1
Max. off-state voltage: 6V
Collector-emitter voltage: 80V
CTR@If: 1000%@10mA
Insulation voltage: 4.17kV
Case: PDIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
Turn-on time: 5µs
Turn-off time: 0.1ms
Produkt ist nicht verfügbar
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MJB45H11G mjb44h11-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Power dissipation: 50W
Current gain: 60
Collector-emitter voltage: 80V
Polarisation: bipolar
Case: D2PAK
Type of transistor: PNP
Kind of package: tube
Produkt ist nicht verfügbar
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NXH020U90MNF2PTG NXH020U90MNF2PTG.PDF
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 900V
Drain current: 149A
Case: PIM20
Topology: NTC thermistor; Vienna Rectifier
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 447A
Power dissipation: 352W
Technology: SiC
Gate-source voltage: -8...18V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
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NXH003P120M3F2PTHG nxh003p120m3f2pthg-d.pdf
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 350A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 5.88mΩ
Drain current: 350A
Pulsed drain current: 700A
Drain-source voltage: 1.2kV
Power dissipation: 979W
Topology: MOSFET half-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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NXH004P120M3F2PTNG nxh004p120m3f2ptng-d.pdf
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 338A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 7.5mΩ
Drain current: 338A
Pulsed drain current: 676A
Drain-source voltage: 1.2kV
Power dissipation: 1098W
Topology: MOSFET half-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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NXH003P120M3F2PTNG nxh003p120m3f2ptng-d.pdf
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 435A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 5.88mΩ
Drain current: 435A
Pulsed drain current: 870A
Drain-source voltage: 1.2kV
Power dissipation: 1482W
Topology: MOSFET half-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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NXH006P120M3F2PTHG nxh006p120m3f2-d.pdf
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 191A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 14.6mΩ
Drain current: 191A
Pulsed drain current: 382A
Drain-source voltage: 1.2kV
Power dissipation: 556W
Topology: MOSFET half-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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NXH004P120M3F2PTHG nxh004p120m3f2pthg-d.pdf
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 284A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 7.5mΩ
Drain current: 284A
Pulsed drain current: 568A
Drain-source voltage: 1.2kV
Power dissipation: 785W
Topology: MOSFET half-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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NXH006P120MNF2PTG nxh006p120mnf2-d.pdf
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 304A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -15...25V
On-state resistance: 7.28mΩ
Drain current: 304A
Pulsed drain current: 912A
Drain-source voltage: 1.2kV
Power dissipation: 950W
Topology: MOSFET half-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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NXH007F120M3F2PTHG nxh007f120m3f2-d.pdf
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 149A; PIM34; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM34
Gate-source voltage: -10...22V
On-state resistance: 15.9mΩ
Drain current: 149A
Pulsed drain current: 447A
Drain-source voltage: 1.2kV
Power dissipation: 353W
Topology: H-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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NXH008T120M3F2PTHG nxh008t120m3f2-d.pdf
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 127A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM29
Gate-source voltage: -10...22V
On-state resistance: 15mΩ
Drain current: 127A
Pulsed drain current: 387A
Drain-source voltage: 1.2kV
Power dissipation: 371W
Topology: 3-level inverter TNPC
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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NXH011F120M3F2PTHG nxh011f120m3f2pt-d.pdf
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 105A; PIM34; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM34
Gate-source voltage: -10...22V
On-state resistance: 21.9mΩ
Drain current: 105A
Pulsed drain current: 316A
Drain-source voltage: 1.2kV
Power dissipation: 244W
Topology: H-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
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NXH011T120M3F2PTHG nxh011t120m3f2-d.pdf
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 91A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM29
Gate-source voltage: -10...22V
On-state resistance: 28.1mΩ
Drain current: 91A
Pulsed drain current: 273A
Drain-source voltage: 1.2kV
Power dissipation: 272W
Topology: 3-level inverter TNPC
Kind of package: in-tray
Produkt ist nicht verfügbar
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NXH400N100H4Q2F2PG nxh400n100h4q2f2-d.pdf
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 400A; PIM42
Type of semiconductor module: IGBT
Semiconductor structure: SiC diode/transistor
Max. off-state voltage: 1kV
Collector current: 400A
Case: PIM42
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Mechanical mounting: screw
Technology: SiC
Produkt ist nicht verfügbar
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4N35SVM 4n37m-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Collector-emitter voltage: 30V
Case: SMD6
Turn-on time: 2µs
Turn-off time: 2µs
Max. off-state voltage: 6V
Number of pins: 6
Manufacturer series: 4N35
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1000+0.26 EUR
Mindestbestellmenge: 1000 Stücke
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MC33269DTRK-5.0G description MC33269.PDF
MC33269DTRK-5.0G
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.8A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Tolerance: ±1%
Manufacturer series: MC33269
Input voltage: 1.35...10V
Voltage drop: 1.1V
Operating temperature: -40...125°C
auf Bestellung 3849 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
125+0.68 EUR
177+0.49 EUR
189+0.45 EUR
211+0.4 EUR
250+0.38 EUR
500+0.36 EUR
1000+0.33 EUR
2500+0.3 EUR
Mindestbestellmenge: 125 Stücke
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MC33269DT-3.3G MC33269.PDF
MC33269DT-3.3G
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Tolerance: ±1%
Manufacturer series: MC33269
Input voltage: 1.35...10V
Voltage drop: 1.1V
Operating temperature: -40...125°C
auf Bestellung 234 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
109+0.79 EUR
125+0.68 EUR
149+0.57 EUR
190+0.45 EUR
Mindestbestellmenge: 109 Stücke
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MC33269D-3.3G MC33269.PDF
MC33269D-3.3G
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SO8; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: SO8
Mounting: SMD
Kind of package: tube
Number of channels: 1
Tolerance: ±1%
Manufacturer series: MC33269
Input voltage: 1.35...10V
Voltage drop: 1.1V
Operating temperature: -40...125°C
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
13+6.56 EUR
Mindestbestellmenge: 13 Stücke
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MC33269DR2G MC33269.PDF
MC33269DR2G
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷18.65V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...18.65V
Output current: 0.8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Tolerance: ±1%
Manufacturer series: MC33269
Input voltage: 1.35...10V
Voltage drop: 1.1V
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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MC33269ST-3.3T3G mc33269-d.pdf
MC33269ST-3.3T3G
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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MC33269DR2-3.3G mc33269-d.pdf
MC33269DR2-3.3G
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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MC33269T-3.3G mc33269-d.pdf
MC33269T-3.3G
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220AB; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: TO220AB
Mounting: THT
Kind of package: tube
Number of channels: 1
Produkt ist nicht verfügbar
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MC33269DR2-5.0G mc33269-d.pdf
MC33269DR2-5.0G
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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GBPC2501 GBPCxx.PDF
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 25A
Version: square
Kind of package: bulk
Case: GBPC
Type of bridge rectifier: single-phase
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.1V
Leads: connectors FASTON
Max. off-state voltage: 0.1kV
Electrical mounting: THT
Load current: 25A
Produkt ist nicht verfügbar
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GBPC2501W GBPCxx.PDF
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 25A
Version: square
Kind of package: bulk
Case: GBPC-W
Type of bridge rectifier: single-phase
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.1V
Leads: wire Ø 1.0mm
Max. off-state voltage: 0.1kV
Electrical mounting: THT
Load current: 25A
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