| Foto | Bezeichnung | Hersteller | Beschreibung |
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| MC100EP131FAR2G | ONSEMI |
 Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 4; IN: 4; ECL; 100EP; SMD; 120mA; OUT: 4 Kind of output: complementary Kind of integrated circuit: D flip-flop Type of integrated circuit: digital Technology: ECL Mounting: SMD Trigger: positive-edge-triggered Operating temperature: -40...85°C Supply voltage: -5.5...-3V Quiescent current: 120mA Number of outputs: 4 Number of channels: 4 Number of inputs: 4 Manufacturer series: 100EP Clock frequency: 3GHz Kind of gate: AND |
Produkt ist nicht verfügbar |
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| MC100EP139DTR2G | ONSEMI |
Category: Supervisor circuits Description: IC: digital; TSSOP20; 3÷5.5V; Ch: 1 Type of integrated circuit: digital Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Supply voltage: 3...5.5V Number of channels: 1 |
Produkt ist nicht verfügbar |
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| MC100EP139DWG | ONSEMI |
Category: Supervisor circuits Description: IC: digital; SOIC20; 3÷5.5V; Ch: 1; OUT: 4; 100EP; ECL Kind of input: differential Type of integrated circuit: digital Technology: ECL Mounting: SMD Case: SOIC20 Operating temperature: -40...85°C Supply voltage: 3...5.5V Number of outputs: 4 Number of channels: 1 Manufacturer series: 100EP |
Produkt ist nicht verfügbar |
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1N4007 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; CASE59; 3W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Capacitance: 15pF Power dissipation: 3W |
Produkt ist nicht verfügbar |
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MUR420G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 4A; bulk; Ifsm: 125A; CASE267-05; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: bulk Max. forward impulse current: 125A Case: CASE267-05 Max. forward voltage: 0.89V Reverse recovery time: 25ns |
auf Bestellung 937 Stücke: Lieferzeit 14-21 Tag (e) |
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MUR420RLG | ONSEMI |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 4A; reel; Ifsm: 125A; CASE267-05; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel Max. forward impulse current: 125A Case: CASE267-05 Max. forward voltage: 0.89V Reverse recovery time: 25ns |
auf Bestellung 1514 Stücke: Lieferzeit 14-21 Tag (e) |
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TIP110G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 60V; 2A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 2A Power dissipation: 2W Case: TO220AB Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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ESD5Z12T1G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 240W; 14.1V; 9.6A; unidirectional; SOD523 Type of diode: TVS Version: ESD Peak pulse power dissipation: 0.24kW Max. off-state voltage: 12V Breakdown voltage: 14.1V Max. forward impulse current: 9.6A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Leakage current: 10nA |
auf Bestellung 1481 Stücke: Lieferzeit 14-21 Tag (e) |
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ESD5Z6.0T1G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 181W; 6.8V; 8.8A; unidirectional; SOD523; reel,tape Type of diode: TVS Version: ESD Peak pulse power dissipation: 0.181kW Max. off-state voltage: 6V Breakdown voltage: 6.8V Max. forward impulse current: 8.8A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Leakage current: 10nA |
auf Bestellung 3063 Stücke: Lieferzeit 14-21 Tag (e) |
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| BZX84C5V6 | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84C |
Produkt ist nicht verfügbar |
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BZX84C5V6LT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84C |
auf Bestellung 2868 Stücke: Lieferzeit 14-21 Tag (e) |
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| BZX84C5V6ET3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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| SZBZX84C5V6LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84C Application: automotive industry |
Produkt ist nicht verfügbar |
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| SZBZX84C5V6ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±7% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
Produkt ist nicht verfügbar |
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NCP1606ADR2G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost Case: SO8 Mounting: SMD Type of integrated circuit: PMIC Operating temperature: -40...125°C Output current: -500...800mA Number of channels: 1 Operating voltage: 9.5...20V DC Topology: boost |
Produkt ist nicht verfügbar |
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| NCS20032DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; SO8; 4mV; IB: 1pA Kind of package: reel; tape Mounting: SMT Operating temperature: -40...125°C Input offset current: 1pA Input bias current: 1pA Input offset voltage: 4mV Voltage supply range: 1.7...5.5V DC Slew rate: 8V/μs Bandwidth: 7MHz Type of integrated circuit: operational amplifier Number of channels: dual; 2 Integrated circuit features: rail-to-rail output Case: SO8 |
Produkt ist nicht verfügbar |
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| NCS20032DMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; Micro8; 4mV Kind of package: reel; tape Mounting: SMT Operating temperature: -40...125°C Input offset current: 1pA Input bias current: 1pA Input offset voltage: 4mV Voltage supply range: 1.7...5.5V DC Slew rate: 8V/μs Bandwidth: 7MHz Type of integrated circuit: operational amplifier Number of channels: dual; 2 Integrated circuit features: low voltage; rail-to-rail output Case: Micro8 |
Produkt ist nicht verfügbar |
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| NCS20032DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; TSSOP8; 4mV Kind of package: reel; tape Mounting: SMT Operating temperature: -40...125°C Input offset current: 1pA Input bias current: 1pA Input offset voltage: 4mV Voltage supply range: 1.7...5.5V DC Slew rate: 8V/μs Bandwidth: 7MHz Type of integrated circuit: operational amplifier Number of channels: dual; 2 Integrated circuit features: low voltage; rail-to-rail output Case: TSSOP8 |
Produkt ist nicht verfügbar |
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| NCS2003SN2T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; Ch: 1; 1.7÷5.5VDC; SOT23-5; 4mV Kind of package: reel; tape Mounting: SMT Operating temperature: -40...125°C Input offset current: 1pA Input bias current: 1pA Input offset voltage: 4mV Voltage supply range: 1.7...5.5V DC Slew rate: 8V/μs Bandwidth: 7MHz Type of integrated circuit: operational amplifier Number of channels: single; 1 Integrated circuit features: low voltage; rail-to-rail output Case: SOT23-5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| BZX84C18LT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 250mW; 18V; SMD; SOT23; single diode Type of diode: Zener Power dissipation: 0.25W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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| SZBZX84C18LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; reel,tape; single diode; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84C Application: automotive industry |
Produkt ist nicht verfügbar |
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SZBZX84C18ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
Produkt ist nicht verfügbar |
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| 2SD1803T-TL-H | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 5A; 1W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 5A Power dissipation: 1W Case: DPAK Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
Produkt ist nicht verfügbar |
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FODM1009R2 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SSOP4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 200-400%@5mA Collector-emitter voltage: 70V Case: SSOP4 Max. off-state voltage: 6V Manufacturer series: FODM100x |
auf Bestellung 295 Stücke: Lieferzeit 14-21 Tag (e) |
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MM3Z15VST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 15V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Mounting: SMD Tolerance: ±2% Case: SOD323 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MM3ZxxST1G |
Produkt ist nicht verfügbar |
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| MM3Z15VB | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 15V; SMD; SOD323F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 15V Mounting: SMD Tolerance: ±2% Case: SOD323F Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MM3ZxxB |
Produkt ist nicht verfügbar |
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MMSZ4692T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; reel,tape; single diode Manufacturer series: MMSZ4xxTxG Mounting: SMD Semiconductor structure: single diode Case: SOD123 Type of diode: Zener Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 6.8V Kind of package: reel; tape |
auf Bestellung 8629 Stücke: Lieferzeit 14-21 Tag (e) |
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SZMMSZ4692T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; reel,tape; single diode Manufacturer series: MMSZ4xxTxG Mounting: SMD Semiconductor structure: single diode Case: SOD123 Type of diode: Zener Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 6.8V Kind of package: reel; tape Application: automotive industry |
auf Bestellung 2760 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMJST2D6N08HTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10 Kind of package: reel; tape Mounting: SMD Case: TCPAK10 Polarisation: unipolar Gate charge: 68nC On-state resistance: 2.8mΩ Gate-source voltage: ±20V Power dissipation: 58W Drain-source voltage: 80V Drain current: 131.5A Pulsed drain current: 900A Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| NTMJST2D6N08HTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10 Kind of package: reel; tape Mounting: SMD Case: TCPAK10 Polarisation: unipolar Gate charge: 68nC On-state resistance: 2.8mΩ Gate-source voltage: ±20V Power dissipation: 58W Drain-source voltage: 80V Drain current: 131.5A Pulsed drain current: 900A Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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FDA59N25 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 35A; Idm: 236A; 392W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 35A Pulsed drain current: 236A Power dissipation: 392W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 49mΩ Mounting: THT Gate charge: 82nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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FDS89161 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Power dissipation: 31W Case: SO8 Gate-source voltage: ±20V On-state resistance: 176mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 4.1nC Technology: PowerTrench® |
auf Bestellung 1993 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS89161LZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Power dissipation: 31W Case: SO8 Gate-source voltage: ±20V On-state resistance: 182mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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FDN5618P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.25A; 0.46W; SuperSOT-3 Polarisation: unipolar Kind of channel: enhancement Mounting: SMD Features of semiconductor devices: logic level Type of transistor: P-MOSFET Technology: PowerTrench® Kind of package: reel; tape Case: SuperSOT-3 Drain-source voltage: -60V Drain current: -1.25A Gate charge: 13.8nC On-state resistance: 0.23Ω Power dissipation: 0.46W Gate-source voltage: ±20V |
auf Bestellung 482 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDB16AN08A0 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 58A; 135W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 135W Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 28nC On-state resistance: 16mΩ Gate-source voltage: ±20V Drain current: 58A Drain-source voltage: 75V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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RS1K | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 10pF Case: DO214AC; SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Power dissipation: 1.19W |
Produkt ist nicht verfügbar |
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| RS1KFP | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1.2A Reverse recovery time: 300ns Semiconductor structure: single diode Case: SOD123HE Max. forward voltage: 1.3V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| RS1KFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 0.8A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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NRVHPRS1KFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 0.8A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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1SMB5932BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 20V; SMD; SMB; reel,tape; single diode; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 20V Mounting: SMD Tolerance: ±5% Case: SMB Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMB59xxB |
auf Bestellung 521 Stücke: Lieferzeit 14-21 Tag (e) |
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| SZ1SMB5932BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 20V; SMD; SMB; reel,tape; single diode; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 20V Mounting: SMD Tolerance: ±5% Case: SMB Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMB59xxB Application: automotive industry |
Produkt ist nicht verfügbar |
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| DTC115EET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Quantity in set/package: 3000pcs. Type of transistor: NPN Mounting: SMD Collector current: 0.1A Power dissipation: 0.3W Kind of transistor: BRT Collector-emitter voltage: 50V Polarisation: bipolar Current gain: 80...150 Base-emitter resistor: 100kΩ Base resistor: 100kΩ Case: SC75; SOT416 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| DTC115EM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 100kΩ Quantity in set/package: 8000pcs. Type of transistor: NPN Mounting: SMD Collector current: 0.1A Power dissipation: 0.6W Kind of transistor: BRT Collector-emitter voltage: 50V Polarisation: bipolar Current gain: 80...150 Base-emitter resistor: 100kΩ Base resistor: 100kΩ Case: SOT723 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| DTC115TET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 100kΩ Quantity in set/package: 3000pcs. Type of transistor: NPN Mounting: SMD Collector current: 0.1A Power dissipation: 0.3W Kind of transistor: BRT Collector-emitter voltage: 50V Polarisation: bipolar Current gain: 160...350 Base resistor: 100kΩ Case: SC75; SOT416 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| DTC115TM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 100kΩ Quantity in set/package: 8000pcs. Type of transistor: NPN Mounting: SMD Collector current: 0.1A Power dissipation: 0.6W Kind of transistor: BRT Collector-emitter voltage: 50V Polarisation: bipolar Current gain: 160...350 Base resistor: 100kΩ Case: SOT723 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| NCP137AFCTC110T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 700mA; WLCSP6; SMD Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP137 Mounting: SMD Type of integrated circuit: voltage regulator Case: WLCSP6 Operating temperature: -40...85°C Voltage drop: 60mV Output current: 0.7A Number of channels: 1 Tolerance: ±1% Output voltage: 1.1V Input voltage: 1.1...5.5V |
Produkt ist nicht verfügbar |
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MC74HC1G04DFT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Kind of package: reel; tape Case: SC70-5 Number of channels: single; 1 Mounting: SMD Operating temperature: -55...125°C Delay time: 7ns Number of inputs: 1 Technology: CMOS Supply voltage: 2...6V DC Family: HC |
auf Bestellung 880 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC74HC1G04DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Kind of package: reel; tape Case: SC70-5 Number of channels: single; 1 Mounting: SMD Operating temperature: -55...125°C Delay time: 20ns Number of inputs: 1 Technology: CMOS Supply voltage: 2...6V DC Family: HC |
Produkt ist nicht verfügbar |
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| MC74HC1G00DFT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SC70-5 Operating temperature: -55...125°C Family: HC Supply voltage: 2...6V DC Kind of package: reel; tape Technology: CMOS |
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| MC74HC1G04DFT2G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
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| MC74HC1G32DBVT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
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| MC74HC1G08DBVT1G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
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| MC74HC1G32DBVT1G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC74A; -55÷125°C; 1uA; HC; OUT: 1 Type of integrated circuit: digital Kind of gate: OR Number of channels: 1 Number of inputs: 2 Mounting: SMD Case: SC74A Operating temperature: -55...125°C Quiescent current: 1µA Family: HC Supply voltage: 2...6V Number of outputs: 1 |
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| MC74HC1G00DBVT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
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| MC74HC1G00DBVT1G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC74A; -55÷125°C; 1uA; 15ns Type of integrated circuit: digital Kind of gate: NAND Number of channels: 1 Number of inputs: 2 Mounting: SMD Case: SC74A Operating temperature: -55...125°C Quiescent current: 1µA Family: HC Number of outputs: 1 Supply voltage: 2...6V Delay time: 15ns Technology: CMOS |
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| MC74HC1G00DFT1G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC70-5; -55÷125°C; 1uA; HC; OUT: 1 Type of integrated circuit: digital Kind of gate: NAND Number of channels: 1 Number of inputs: 2 Mounting: SMD Case: SC70-5 Operating temperature: -55...125°C Quiescent current: 1µA Family: HC Number of outputs: 1 Supply voltage: 2...6V |
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| MC74HC1G00DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SC70-5 Operating temperature: -55...125°C Family: HC Supply voltage: 2...6V DC Kind of package: reel; tape Technology: CMOS |
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| MC74HC1G00DFT2G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; -55÷125°C; 1uA; 15ns Type of integrated circuit: digital Kind of gate: NAND Number of channels: 1 Number of inputs: 2 Mounting: SMD Case: SC70-5 Operating temperature: -55...125°C Quiescent current: 1µA Family: HC Number of outputs: 1 Supply voltage: 2...6V Delay time: 15ns Technology: CMOS |
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| MC74HC1G02DBVT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
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| MC74HC1G02DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOR Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 20ns Family: HC |
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| MC100EP131FAR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; IN: 4; ECL; 100EP; SMD; 120mA; OUT: 4
Kind of output: complementary
Kind of integrated circuit: D flip-flop
Type of integrated circuit: digital
Technology: ECL
Mounting: SMD
Trigger: positive-edge-triggered
Operating temperature: -40...85°C
Supply voltage: -5.5...-3V
Quiescent current: 120mA
Number of outputs: 4
Number of channels: 4
Number of inputs: 4
Manufacturer series: 100EP
Clock frequency: 3GHz
Kind of gate: AND
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; IN: 4; ECL; 100EP; SMD; 120mA; OUT: 4
Kind of output: complementary
Kind of integrated circuit: D flip-flop
Type of integrated circuit: digital
Technology: ECL
Mounting: SMD
Trigger: positive-edge-triggered
Operating temperature: -40...85°C
Supply voltage: -5.5...-3V
Quiescent current: 120mA
Number of outputs: 4
Number of channels: 4
Number of inputs: 4
Manufacturer series: 100EP
Clock frequency: 3GHz
Kind of gate: AND
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| MC100EP139DTR2G |
|
Hersteller: ONSEMI
Category: Supervisor circuits
Description: IC: digital; TSSOP20; 3÷5.5V; Ch: 1
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
Number of channels: 1
Category: Supervisor circuits
Description: IC: digital; TSSOP20; 3÷5.5V; Ch: 1
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
Number of channels: 1
Produkt ist nicht verfügbar
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| MC100EP139DWG |
|
Hersteller: ONSEMI
Category: Supervisor circuits
Description: IC: digital; SOIC20; 3÷5.5V; Ch: 1; OUT: 4; 100EP; ECL
Kind of input: differential
Type of integrated circuit: digital
Technology: ECL
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
Number of outputs: 4
Number of channels: 1
Manufacturer series: 100EP
Category: Supervisor circuits
Description: IC: digital; SOIC20; 3÷5.5V; Ch: 1; OUT: 4; 100EP; ECL
Kind of input: differential
Type of integrated circuit: digital
Technology: ECL
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
Number of outputs: 4
Number of channels: 1
Manufacturer series: 100EP
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 1N4007 |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; CASE59; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; CASE59; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR420G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; bulk; Ifsm: 125A; CASE267-05; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: bulk
Max. forward impulse current: 125A
Case: CASE267-05
Max. forward voltage: 0.89V
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; bulk; Ifsm: 125A; CASE267-05; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: bulk
Max. forward impulse current: 125A
Case: CASE267-05
Max. forward voltage: 0.89V
Reverse recovery time: 25ns
auf Bestellung 937 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 229+ | 0.31 EUR |
| 235+ | 0.3 EUR |
| MUR420RLG | |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; reel; Ifsm: 125A; CASE267-05; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 125A
Case: CASE267-05
Max. forward voltage: 0.89V
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; reel; Ifsm: 125A; CASE267-05; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 125A
Case: CASE267-05
Max. forward voltage: 0.89V
Reverse recovery time: 25ns
auf Bestellung 1514 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 153+ | 0.47 EUR |
| 166+ | 0.43 EUR |
| 203+ | 0.35 EUR |
| 224+ | 0.32 EUR |
| 500+ | 0.28 EUR |
| TIP110G |
|
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 2A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 2A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
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| ESD5Z12T1G | |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 240W; 14.1V; 9.6A; unidirectional; SOD523
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.24kW
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Max. forward impulse current: 9.6A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Leakage current: 10nA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 240W; 14.1V; 9.6A; unidirectional; SOD523
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.24kW
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Max. forward impulse current: 9.6A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Leakage current: 10nA
auf Bestellung 1481 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 848+ | 0.084 EUR |
| 1180+ | 0.061 EUR |
| 1341+ | 0.053 EUR |
| 1481+ | 0.049 EUR |
| ESD5Z6.0T1G | |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 181W; 6.8V; 8.8A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.181kW
Max. off-state voltage: 6V
Breakdown voltage: 6.8V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Leakage current: 10nA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 181W; 6.8V; 8.8A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.181kW
Max. off-state voltage: 6V
Breakdown voltage: 6.8V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Leakage current: 10nA
auf Bestellung 3063 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 556+ | 0.13 EUR |
| 705+ | 0.1 EUR |
| 1283+ | 0.056 EUR |
| 1613+ | 0.044 EUR |
| 2294+ | 0.031 EUR |
| BZX84C5V6 |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Produkt ist nicht verfügbar
Im Einkaufswagen
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| BZX84C5V6LT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
auf Bestellung 2868 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 981+ | 0.073 EUR |
| 1887+ | 0.038 EUR |
| 2689+ | 0.027 EUR |
| 2868+ | 0.024 EUR |
| BZX84C5V6ET3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZBZX84C5V6LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZBZX84C5V6ET1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NCP1606ADR2G |
|
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Case: SO8
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output current: -500...800mA
Number of channels: 1
Operating voltage: 9.5...20V DC
Topology: boost
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Case: SO8
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output current: -500...800mA
Number of channels: 1
Operating voltage: 9.5...20V DC
Topology: boost
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NCS20032DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; SO8; 4mV; IB: 1pA
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Integrated circuit features: rail-to-rail output
Case: SO8
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; SO8; 4mV; IB: 1pA
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Integrated circuit features: rail-to-rail output
Case: SO8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCS20032DMR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; Micro8; 4mV
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Integrated circuit features: low voltage; rail-to-rail output
Case: Micro8
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; Micro8; 4mV
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Integrated circuit features: low voltage; rail-to-rail output
Case: Micro8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCS20032DTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; TSSOP8; 4mV
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Integrated circuit features: low voltage; rail-to-rail output
Case: TSSOP8
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; TSSOP8; 4mV
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Integrated circuit features: low voltage; rail-to-rail output
Case: TSSOP8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCS2003SN2T1G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 1; 1.7÷5.5VDC; SOT23-5; 4mV
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Integrated circuit features: low voltage; rail-to-rail output
Case: SOT23-5
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 1; 1.7÷5.5VDC; SOT23-5; 4mV
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Integrated circuit features: low voltage; rail-to-rail output
Case: SOT23-5
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| BZX84C18LT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 18V; SMD; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 18V; SMD; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
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Im Einkaufswagen
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| SZBZX84C18LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
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Im Einkaufswagen
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| SZBZX84C18ET1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
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| 2SD1803T-TL-H |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 5A; 1W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 5A
Power dissipation: 1W
Case: DPAK
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 5A; 1W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 5A
Power dissipation: 1W
Case: DPAK
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
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| FODM1009R2 |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SSOP4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-400%@5mA
Collector-emitter voltage: 70V
Case: SSOP4
Max. off-state voltage: 6V
Manufacturer series: FODM100x
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SSOP4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-400%@5mA
Collector-emitter voltage: 70V
Case: SSOP4
Max. off-state voltage: 6V
Manufacturer series: FODM100x
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 165+ | 0.43 EUR |
| 216+ | 0.33 EUR |
| MM3Z15VST1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MM3Z15VB |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
Produkt ist nicht verfügbar
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| MMSZ4692T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; reel,tape; single diode
Manufacturer series: MMSZ4xxTxG
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.8V
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; reel,tape; single diode
Manufacturer series: MMSZ4xxTxG
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.8V
Kind of package: reel; tape
auf Bestellung 8629 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 1137+ | 0.063 EUR |
| 1516+ | 0.047 EUR |
| 2605+ | 0.027 EUR |
| 2858+ | 0.025 EUR |
| SZMMSZ4692T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; reel,tape; single diode
Manufacturer series: MMSZ4xxTxG
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.8V
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; reel,tape; single diode
Manufacturer series: MMSZ4xxTxG
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.8V
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2760 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 264+ | 0.27 EUR |
| 329+ | 0.22 EUR |
| 376+ | 0.19 EUR |
| 625+ | 0.11 EUR |
| 834+ | 0.086 EUR |
| NVMJST2D6N08HTXG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10
Kind of package: reel; tape
Mounting: SMD
Case: TCPAK10
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 2.8mΩ
Gate-source voltage: ±20V
Power dissipation: 58W
Drain-source voltage: 80V
Drain current: 131.5A
Pulsed drain current: 900A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10
Kind of package: reel; tape
Mounting: SMD
Case: TCPAK10
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 2.8mΩ
Gate-source voltage: ±20V
Power dissipation: 58W
Drain-source voltage: 80V
Drain current: 131.5A
Pulsed drain current: 900A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMJST2D6N08HTXG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10
Kind of package: reel; tape
Mounting: SMD
Case: TCPAK10
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 2.8mΩ
Gate-source voltage: ±20V
Power dissipation: 58W
Drain-source voltage: 80V
Drain current: 131.5A
Pulsed drain current: 900A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10
Kind of package: reel; tape
Mounting: SMD
Case: TCPAK10
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 2.8mΩ
Gate-source voltage: ±20V
Power dissipation: 58W
Drain-source voltage: 80V
Drain current: 131.5A
Pulsed drain current: 900A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| FDA59N25 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 35A; Idm: 236A; 392W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 392W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 35A; Idm: 236A; 392W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 392W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FDS89161 |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 31W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 176mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.1nC
Technology: PowerTrench®
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 31W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 176mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.1nC
Technology: PowerTrench®
auf Bestellung 1993 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 52+ | 1.39 EUR |
| 54+ | 1.33 EUR |
| 60+ | 1.2 EUR |
| FDS89161LZ |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 31W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 182mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 31W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 182mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDN5618P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.25A; 0.46W; SuperSOT-3
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: logic level
Type of transistor: P-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Case: SuperSOT-3
Drain-source voltage: -60V
Drain current: -1.25A
Gate charge: 13.8nC
On-state resistance: 0.23Ω
Power dissipation: 0.46W
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.25A; 0.46W; SuperSOT-3
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: logic level
Type of transistor: P-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Case: SuperSOT-3
Drain-source voltage: -60V
Drain current: -1.25A
Gate charge: 13.8nC
On-state resistance: 0.23Ω
Power dissipation: 0.46W
Gate-source voltage: ±20V
auf Bestellung 482 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 265+ | 0.27 EUR |
| 311+ | 0.23 EUR |
| 323+ | 0.22 EUR |
| FDB16AN08A0 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 58A; 135W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 135W
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 28nC
On-state resistance: 16mΩ
Gate-source voltage: ±20V
Drain current: 58A
Drain-source voltage: 75V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 58A; 135W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 135W
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 28nC
On-state resistance: 16mΩ
Gate-source voltage: ±20V
Drain current: 58A
Drain-source voltage: 75V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS1K |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS1KFP |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1.2A
Reverse recovery time: 300ns
Semiconductor structure: single diode
Case: SOD123HE
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1.2A
Reverse recovery time: 300ns
Semiconductor structure: single diode
Case: SOD123HE
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS1KFA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 0.8A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 0.8A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVHPRS1KFA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 0.8A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 0.8A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1SMB5932BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
auf Bestellung 521 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 278+ | 0.26 EUR |
| 319+ | 0.22 EUR |
| 477+ | 0.15 EUR |
| 521+ | 0.14 EUR |
| SZ1SMB5932BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC115EET1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Quantity in set/package: 3000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.3W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 80...150
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Case: SC75; SOT416
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Quantity in set/package: 3000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.3W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 80...150
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Case: SC75; SOT416
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC115EM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 100kΩ
Quantity in set/package: 8000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.6W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 80...150
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Case: SOT723
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 100kΩ
Quantity in set/package: 8000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.6W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 80...150
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Case: SOT723
Kind of package: reel; tape
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| DTC115TET1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 100kΩ
Quantity in set/package: 3000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.3W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 160...350
Base resistor: 100kΩ
Case: SC75; SOT416
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 100kΩ
Quantity in set/package: 3000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.3W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 160...350
Base resistor: 100kΩ
Case: SC75; SOT416
Kind of package: reel; tape
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| DTC115TM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 100kΩ
Quantity in set/package: 8000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.6W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 160...350
Base resistor: 100kΩ
Case: SOT723
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 100kΩ
Quantity in set/package: 8000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.6W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 160...350
Base resistor: 100kΩ
Case: SOT723
Kind of package: reel; tape
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| NCP137AFCTC110T2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 700mA; WLCSP6; SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP137
Mounting: SMD
Type of integrated circuit: voltage regulator
Case: WLCSP6
Operating temperature: -40...85°C
Voltage drop: 60mV
Output current: 0.7A
Number of channels: 1
Tolerance: ±1%
Output voltage: 1.1V
Input voltage: 1.1...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 700mA; WLCSP6; SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP137
Mounting: SMD
Type of integrated circuit: voltage regulator
Case: WLCSP6
Operating temperature: -40...85°C
Voltage drop: 60mV
Output current: 0.7A
Number of channels: 1
Tolerance: ±1%
Output voltage: 1.1V
Input voltage: 1.1...5.5V
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| MC74HC1G04DFT1G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Kind of package: reel; tape
Case: SC70-5
Number of channels: single; 1
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 7ns
Number of inputs: 1
Technology: CMOS
Supply voltage: 2...6V DC
Family: HC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Kind of package: reel; tape
Case: SC70-5
Number of channels: single; 1
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 7ns
Number of inputs: 1
Technology: CMOS
Supply voltage: 2...6V DC
Family: HC
auf Bestellung 880 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 880+ | 0.082 EUR |
| MC74HC1G04DFT2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Kind of package: reel; tape
Case: SC70-5
Number of channels: single; 1
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 20ns
Number of inputs: 1
Technology: CMOS
Supply voltage: 2...6V DC
Family: HC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Kind of package: reel; tape
Case: SC70-5
Number of channels: single; 1
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 20ns
Number of inputs: 1
Technology: CMOS
Supply voltage: 2...6V DC
Family: HC
Produkt ist nicht verfügbar
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| MC74HC1G00DFT1G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Technology: CMOS
Produkt ist nicht verfügbar
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| MC74HC1G04DFT2G-Q |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Produkt ist nicht verfügbar
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| MC74HC1G32DBVT1G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Produkt ist nicht verfügbar
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| MC74HC1G08DBVT1G-Q |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Produkt ist nicht verfügbar
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| MC74HC1G32DBVT1G-Q |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC74A; -55÷125°C; 1uA; HC; OUT: 1
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC74A
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Supply voltage: 2...6V
Number of outputs: 1
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC74A; -55÷125°C; 1uA; HC; OUT: 1
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC74A
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Supply voltage: 2...6V
Number of outputs: 1
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MC74HC1G00DBVT1G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MC74HC1G00DBVT1G-Q |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC74A; -55÷125°C; 1uA; 15ns
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC74A
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Number of outputs: 1
Supply voltage: 2...6V
Delay time: 15ns
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC74A; -55÷125°C; 1uA; 15ns
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC74A
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Number of outputs: 1
Supply voltage: 2...6V
Delay time: 15ns
Technology: CMOS
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MC74HC1G00DFT1G-Q |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC70-5; -55÷125°C; 1uA; HC; OUT: 1
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Number of outputs: 1
Supply voltage: 2...6V
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC70-5; -55÷125°C; 1uA; HC; OUT: 1
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Number of outputs: 1
Supply voltage: 2...6V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MC74HC1G00DFT2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Technology: CMOS
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MC74HC1G00DFT2G-Q |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; -55÷125°C; 1uA; 15ns
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Number of outputs: 1
Supply voltage: 2...6V
Delay time: 15ns
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; -55÷125°C; 1uA; 15ns
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Number of outputs: 1
Supply voltage: 2...6V
Delay time: 15ns
Technology: CMOS
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| MC74HC1G02DBVT1G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Produkt ist nicht verfügbar
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| MC74HC1G02DFT2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Produkt ist nicht verfügbar
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