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2N7002ET1G 2N7002ET1G ONSEMI 2N7002E.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.2A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 0.81nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.2A
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2N7002ET7G 2N7002ET7G ONSEMI 2N7002E.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220mA; Idm: 1.2A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.81nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.2A
auf Bestellung 848 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
610+0.12 EUR
848+0.08 EUR
Mindestbestellmenge: 455
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FDC6305N FDC6305N ONSEMI FDC6305N.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.7A; 0.96W; SuperSOT-6
Kind of package: reel; tape
Power dissipation: 0.96W
Polarisation: unipolar
Gate charge: 5nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: 20V
Drain current: 2.7A
On-state resistance: 128mΩ
Type of transistor: N-MOSFET x2
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
82+0.87 EUR
117+0.61 EUR
205+0.35 EUR
217+0.33 EUR
Mindestbestellmenge: 82
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1SMB5930BT3G 1SMB5930BT3G ONSEMI 1SMB59xxBT3G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 2104 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
221+0.32 EUR
329+0.22 EUR
391+0.18 EUR
569+0.13 EUR
596+0.12 EUR
Mindestbestellmenge: 152
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RSL10-SENSE-GEVK ONSEMI RSL10_Sensor_Dev_Kit.pdf Category: Development kits - others
Description: Dev.kit: evaluation; Bluetooth board
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Type of development kit: evaluation
Programmers and development kits features: Bluetooth board
Produkt ist nicht verfügbar
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BZX84C18LT1G BZX84C18LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 50nA
auf Bestellung 18980 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
944+0.08 EUR
1389+0.05 EUR
1656+0.04 EUR
3847+0.02 EUR
4066+0.02 EUR
4133+0.02 EUR
Mindestbestellmenge: 556
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SZBZX84C18ET1G SZBZX84C18ET1G ONSEMI BZX84CxxET1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
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FDMS1D2N03DSD ONSEMI fdms1d2n03dsd-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 54/126A
Power dissipation: 26/42W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 4.9/1.6mΩ
Mounting: SMD
Gate charge: 33/117nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FQT4N20LTF FQT4N20LTF ONSEMI FQT4N20L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.68A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3307 Stücke:
Lieferzeit 14-21 Tag (e)
64+1.13 EUR
87+0.83 EUR
148+0.48 EUR
157+0.46 EUR
500+0.45 EUR
1000+0.44 EUR
Mindestbestellmenge: 64
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MMBF170 MMBF170 ONSEMI BS170,MMBF170.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.3W; SOT23
Type of transistor: N-MOSFET
Case: SOT23
Drain-source voltage: 60V
Drain current: 0.5A
On-state resistance: 1.2Ω
Mounting: SMD
Power dissipation: 0.3W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1564 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
323+0.22 EUR
459+0.16 EUR
531+0.13 EUR
920+0.08 EUR
971+0.07 EUR
Mindestbestellmenge: 193
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MMBF170LT1G MMBF170LT1G ONSEMI MMBF170LT1G.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.225W; SOT23
Type of transistor: N-MOSFET
Case: SOT23
Drain-source voltage: 60V
Drain current: 0.5A
On-state resistance: 5Ω
Mounting: SMD
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 7100 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.30 EUR
376+0.19 EUR
567+0.13 EUR
679+0.11 EUR
1060+0.07 EUR
1122+0.06 EUR
1166+0.06 EUR
Mindestbestellmenge: 239
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MMBF4117 MMBF4117 ONSEMI MMBF4117.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30uA; 225mW; SOT23; Igt: 50mA
Gate current: 50mA
Drain current: 30µA
Type of transistor: N-JFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Gate-source voltage: -40V
Mounting: SMD
Case: SOT23
auf Bestellung 3570 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.70 EUR
152+0.47 EUR
191+0.37 EUR
341+0.21 EUR
360+0.20 EUR
Mindestbestellmenge: 103
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1N5351BG 1N5351BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 14V; bulk; CASE017AA; single diode; 1uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 14V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
auf Bestellung 1004 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
110+0.65 EUR
129+0.56 EUR
270+0.27 EUR
285+0.25 EUR
1000+0.24 EUR
Mindestbestellmenge: 81
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1N5351BRLG 1N5351BRLG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 14V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 14V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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BAS21LT3G BAS21LT3G ONSEMI bas19lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.3W
Leakage current: 0.1mA
Capacitance: 5pF
Produkt ist nicht verfügbar
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1N5242B 1N5242B ONSEMI 1N52xxB.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; bulk; CASE017AG; single diode; 1uA; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N52xxB
auf Bestellung 4125 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
782+0.09 EUR
1232+0.06 EUR
1484+0.05 EUR
2101+0.03 EUR
2794+0.03 EUR
2959+0.02 EUR
Mindestbestellmenge: 556
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MBRB2545CTT4G MBRB2545CTT4G ONSEMI MBRB2545CTG.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward voltage: 0.65V
Max. load current: 30A
auf Bestellung 621 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.07 EUR
46+1.57 EUR
52+1.39 EUR
55+1.32 EUR
100+1.27 EUR
Mindestbestellmenge: 35
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FDMC012N03 ONSEMI fdmc012n03-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BDW94C BDW94C ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBD3F12EE6F2469&compId=BDW94C.pdf?ci_sign=690bb5e4108c20232162073b0e046bcaf29ed0f5 Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 80W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 12A
Power dissipation: 80W
Case: TO220AB
Mounting: THT
Kind of package: bulk
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.63 EUR
74+0.98 EUR
96+0.75 EUR
102+0.71 EUR
Mindestbestellmenge: 44
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BDW94CFTU BDW94CFTU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDB98A9098A1A26C0C7&compId=BDW94CF.pdf?ci_sign=26247f9f884003755699e45e1db0005e5f645378 Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 30W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 12A
Power dissipation: 30W
Case: TO220FP
Current gain: 100...20000
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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MJL1302AG MJL1302AG ONSEMI MJL3281A_MJL1302A.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 260V; 15A; 200W; TO264
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 260V
Collector current: 15A
Power dissipation: 200W
Case: TO264
Mounting: THT
Kind of package: tube
Frequency: 30MHz
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
12+5.96 EUR
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NTR4101PT1G NTR4101PT1G ONSEMI ntr4101.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.7A; 0.21W; SOT23
Mounting: SMD
Power dissipation: 0.21W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.5nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Case: SOT23
Drain-source voltage: -20V
Drain current: -1.7A
On-state resistance: 0.21Ω
Type of transistor: P-MOSFET
auf Bestellung 1505 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
204+0.35 EUR
240+0.30 EUR
355+0.20 EUR
397+0.18 EUR
414+0.17 EUR
568+0.13 EUR
601+0.12 EUR
Mindestbestellmenge: 148
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MC79M05BDTG MC79M05BDTG ONSEMI MC79M00-D.PDF Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.19 EUR
87+0.82 EUR
112+0.64 EUR
166+0.43 EUR
175+0.41 EUR
Mindestbestellmenge: 61
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MC79M05BDTRKG MC79M05BDTRKG ONSEMI MC79M00-D.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
Produkt ist nicht verfügbar
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MC79M05CDTRKG MC79M05CDTRKG ONSEMI MC79M00-D.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
Produkt ist nicht verfügbar
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H11AA1M H11AA1M ONSEMI H11AA1M.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: DIP6
CTR@If: 20%@10mA
auf Bestellung 509 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
118+0.61 EUR
176+0.41 EUR
186+0.38 EUR
Mindestbestellmenge: 66
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H11AA1SR2M H11AA1SR2M ONSEMI H11AA1SR2M.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: Gull wing 6
CTR@If: 20%@10mA
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)
80+0.90 EUR
108+0.66 EUR
Mindestbestellmenge: 80
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FAN73832MX FAN73832MX ONSEMI FAN73832.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SOP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SOP8
Output current: -650...350mA
Number of channels: 2
Supply voltage: 15...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 100ns
Pulse fall time: 80ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Technology: MillerDrive™
auf Bestellung 941 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.47 EUR
55+1.30 EUR
67+1.07 EUR
71+1.02 EUR
500+0.99 EUR
Mindestbestellmenge: 49
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FQPF19N20C FQPF19N20C ONSEMI fqpf19n20c-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.10 EUR
Mindestbestellmenge: 23
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FQPF27P06 FQPF27P06 ONSEMI FQPF27P06.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
Produkt ist nicht verfügbar
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MC74LVX4245DWG MC74LVX4245DWG ONSEMI mc74lvx4245-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Number of channels: 8
Quiescent current: 80µA
Kind of output: 3-state
Kind of package: tube
Manufacturer series: LVX
Technology: TTL
Kind of integrated circuit: bidirectional; transceiver; translator
Mounting: SMD
Operating temperature: -40...85°C
Case: SO24
Supply voltage: 2.7...5.5V DC
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
Mindestbestellmenge: 3
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LM2575T-5G LM2575T-5G ONSEMI LM2575-ON-DTE.PDF description Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 1A; TO220-5; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Produkt ist nicht verfügbar
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SBAT54SLT1G SBAT54SLT1G ONSEMI bat54slt1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 1A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
auf Bestellung 2871 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
341+0.21 EUR
420+0.17 EUR
497+0.14 EUR
588+0.12 EUR
1069+0.07 EUR
1129+0.06 EUR
Mindestbestellmenge: 228
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MCT62S MCT62S ONSEMI mct62-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 5.3kV; CTR@If: 100%@5mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Case: Gull wing 8
Insulation voltage: 5.3kV
CTR@If: 100%@5mA
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.17 EUR
93+0.78 EUR
104+0.69 EUR
Mindestbestellmenge: 61
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MBR60H100CTG MBR60H100CTG ONSEMI MBR60H100CTG.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220-3; Ufmax: 0.81V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
Max. forward voltage: 0.81V
Max. forward impulse current: 350A
Produkt ist nicht verfügbar
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MBR60L45CTG MBR60L45CTG ONSEMI MBR60L45CTG.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220-3; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
Max. forward voltage: 0.76V
Max. forward impulse current: 200A
Produkt ist nicht verfügbar
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BDV64BG BDV64BG ONSEMI BDV64BG.PDF Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 10A
Power dissipation: 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.86 EUR
28+2.56 EUR
30+2.42 EUR
Mindestbestellmenge: 15
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BZX84C9V1LT1G BZX84C9V1LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOT23; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 0.5µA
auf Bestellung 1046 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
642+0.11 EUR
758+0.09 EUR
1046+0.07 EUR
Mindestbestellmenge: 500
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FDMS3672 ONSEMI fdms3672-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 30A; 78W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 30A
Power dissipation: 78W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CAT24C04C4ATR ONSEMI CAT24C01-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C04WI-GT3 ONSEMI CAT24C01-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C04YI-GT3 ONSEMI CAT24C01-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FQP11N40C FQP11N40C ONSEMI FQP11N40C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+17.88 EUR
Mindestbestellmenge: 4
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BAT54CXV3T1G ONSEMI bat54cxv3-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC89; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SC89
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.24W
Produkt ist nicht verfügbar
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SBAT54CTT1G SBAT54CTT1G ONSEMI bat54ctt1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC70; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SC70
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Produkt ist nicht verfügbar
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CAT93C46BHU4I-GT3 ONSEMI CAT93C46B-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: Microwire
Kind of memory: EEPROM
Memory organisation: 128x8/64x16bit
Access time: 250ns
Clock frequency: 4MHz
Operating temperature: -40...85°C
Kind of interface: serial
Memory: 1kb EEPROM
Produkt ist nicht verfügbar
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CAT93C46BVI-GT3 ONSEMI CAT93C46B-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: Microwire
Memory organisation: 128x8/64x16bit
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Access time: 250ns
Clock frequency: 4MHz
Kind of package: reel; tape
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT93C46BYI-GT3 ONSEMI CAT93C46B-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: Microwire
Memory organisation: 128x8/64x16bit
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Access time: 250ns
Clock frequency: 4MHz
Kind of package: reel; tape
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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FDP7030BL ONSEMI FAIRS34662-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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2SA2012-TD-E 2SA2012-TD-E ONSEMI 2sa2012-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89
Mounting: SMD
Type of transistor: PNP
Power dissipation: 3.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Frequency: 350MHz
Collector-emitter voltage: 30V
Current gain: 200...560
Collector current: 5A
auf Bestellung 720 Stücke:
Lieferzeit 14-21 Tag (e)
78+0.92 EUR
116+0.62 EUR
151+0.47 EUR
160+0.45 EUR
Mindestbestellmenge: 78
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NLVASB3157DFT2G NLVASB3157DFT2G ONSEMI nlasb3157-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC88A
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: SC88A
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 1
Kind of output: SPDT
Application: automotive industry
auf Bestellung 900 Stücke:
Lieferzeit 14-21 Tag (e)
160+0.45 EUR
181+0.40 EUR
246+0.29 EUR
261+0.27 EUR
Mindestbestellmenge: 160
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NTR4003NT1G NTR4003NT1G ONSEMI NTR4003N.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.56A; 0.69W; SOT23
Power dissipation: 0.69W
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Drain-source voltage: 30V
Drain current: 0.56A
On-state resistance: 2Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.15nC
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 6627 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
295+0.24 EUR
355+0.20 EUR
560+0.13 EUR
672+0.11 EUR
1299+0.06 EUR
1374+0.05 EUR
Mindestbestellmenge: 218
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BAT54HT1G BAT54HT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BE9C5AF16B04BE28&compId=BAT54HT1-D.PDF?ci_sign=e19eb172504d3a206b72fe2d1fa2ef047a97f5b1 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 7.6pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
auf Bestellung 3066 Stücke:
Lieferzeit 14-21 Tag (e)
771+0.09 EUR
1137+0.06 EUR
1767+0.04 EUR
2137+0.03 EUR
3066+0.02 EUR
Mindestbestellmenge: 771
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MBRD660CTT4G MBRD660CTT4G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED781AEA8BBC7BA0259&compId=MBRD650CTG.PDF?ci_sign=0c54ffa575647dd1f76009aab93580e7bbcc426f Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 3Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. load current: 6A
Kind of package: reel; tape
auf Bestellung 858 Stücke:
Lieferzeit 14-21 Tag (e)
70+1.03 EUR
96+0.75 EUR
134+0.54 EUR
141+0.51 EUR
500+0.50 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
HUF75344G3 HUF75344G3 ONSEMI HUF75344G3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO247
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 285W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 201 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.02 EUR
21+3.47 EUR
22+3.29 EUR
30+3.27 EUR
Mindestbestellmenge: 15
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FQA70N10 FQA70N10 ONSEMI FQA70N10.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49.5A
Power dissipation: 214W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+17.88 EUR
Mindestbestellmenge: 4
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FQB12P20TM FQB12P20TM ONSEMI FQB12P20.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.27A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 760 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.27 EUR
36+2.03 EUR
46+1.56 EUR
49+1.47 EUR
Mindestbestellmenge: 32
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FQB19N20LTM FQB19N20LTM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED781972AB2675AE259&compId=FQB19N20L.pdf?ci_sign=09ce8e6d8a0c9a5c2f4d1d2174e061d2874c3dca Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 13.3A
Pulsed drain current: 84A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 761 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.94 EUR
41+1.76 EUR
54+1.33 EUR
57+1.26 EUR
Mindestbestellmenge: 37
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FQB22P10TM FQB22P10TM ONSEMI FQB22P10.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15.6A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3861 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.06 EUR
37+1.96 EUR
50+1.46 EUR
52+1.39 EUR
500+1.37 EUR
Mindestbestellmenge: 24
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FQB27P06TM FQB27P06TM ONSEMI FQB27P06.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19.1A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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2N7002ET1G 2N7002E.PDF
2N7002ET1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.2A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 0.81nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.2A
Produkt ist nicht verfügbar
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2N7002ET7G 2N7002E.PDF
2N7002ET7G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220mA; Idm: 1.2A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.81nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.2A
auf Bestellung 848 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
610+0.12 EUR
848+0.08 EUR
Mindestbestellmenge: 455
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FDC6305N FDC6305N.pdf
FDC6305N
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.7A; 0.96W; SuperSOT-6
Kind of package: reel; tape
Power dissipation: 0.96W
Polarisation: unipolar
Gate charge: 5nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: 20V
Drain current: 2.7A
On-state resistance: 128mΩ
Type of transistor: N-MOSFET x2
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
117+0.61 EUR
205+0.35 EUR
217+0.33 EUR
Mindestbestellmenge: 82
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1SMB5930BT3G 1SMB59xxBT3G.PDF
1SMB5930BT3G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 2104 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
221+0.32 EUR
329+0.22 EUR
391+0.18 EUR
569+0.13 EUR
596+0.12 EUR
Mindestbestellmenge: 152
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RSL10-SENSE-GEVK RSL10_Sensor_Dev_Kit.pdf
Hersteller: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; Bluetooth board
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Type of development kit: evaluation
Programmers and development kits features: Bluetooth board
Produkt ist nicht verfügbar
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BZX84C18LT1G BZX84B_BZX84C.PDF
BZX84C18LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 50nA
auf Bestellung 18980 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
944+0.08 EUR
1389+0.05 EUR
1656+0.04 EUR
3847+0.02 EUR
4066+0.02 EUR
4133+0.02 EUR
Mindestbestellmenge: 556
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SZBZX84C18ET1G BZX84CxxET1G.PDF
SZBZX84C18ET1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
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FDMS1D2N03DSD fdms1d2n03dsd-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 54/126A
Power dissipation: 26/42W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 4.9/1.6mΩ
Mounting: SMD
Gate charge: 33/117nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FQT4N20LTF FQT4N20L.pdf
FQT4N20LTF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.68A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3307 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
87+0.83 EUR
148+0.48 EUR
157+0.46 EUR
500+0.45 EUR
1000+0.44 EUR
Mindestbestellmenge: 64
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MMBF170 BS170,MMBF170.PDF
MMBF170
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.3W; SOT23
Type of transistor: N-MOSFET
Case: SOT23
Drain-source voltage: 60V
Drain current: 0.5A
On-state resistance: 1.2Ω
Mounting: SMD
Power dissipation: 0.3W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1564 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
323+0.22 EUR
459+0.16 EUR
531+0.13 EUR
920+0.08 EUR
971+0.07 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
MMBF170LT1G MMBF170LT1G.PDF
MMBF170LT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.225W; SOT23
Type of transistor: N-MOSFET
Case: SOT23
Drain-source voltage: 60V
Drain current: 0.5A
On-state resistance: 5Ω
Mounting: SMD
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 7100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.30 EUR
376+0.19 EUR
567+0.13 EUR
679+0.11 EUR
1060+0.07 EUR
1122+0.06 EUR
1166+0.06 EUR
Mindestbestellmenge: 239
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MMBF4117 MMBF4117.pdf
MMBF4117
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30uA; 225mW; SOT23; Igt: 50mA
Gate current: 50mA
Drain current: 30µA
Type of transistor: N-JFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Gate-source voltage: -40V
Mounting: SMD
Case: SOT23
auf Bestellung 3570 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.70 EUR
152+0.47 EUR
191+0.37 EUR
341+0.21 EUR
360+0.20 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
1N5351BG 1N53xx.PDF
1N5351BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 14V; bulk; CASE017AA; single diode; 1uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 14V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
auf Bestellung 1004 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
110+0.65 EUR
129+0.56 EUR
270+0.27 EUR
285+0.25 EUR
1000+0.24 EUR
Mindestbestellmenge: 81
Im Einkaufswagen  Stück im Wert von  UAH
1N5351BRLG 1N53xx.PDF
1N5351BRLG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 14V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 14V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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BAS21LT3G bas19lt1-d.pdf
BAS21LT3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.3W
Leakage current: 0.1mA
Capacitance: 5pF
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N5242B 1N52xxB.PDF
1N5242B
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; bulk; CASE017AG; single diode; 1uA; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N52xxB
auf Bestellung 4125 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
782+0.09 EUR
1232+0.06 EUR
1484+0.05 EUR
2101+0.03 EUR
2794+0.03 EUR
2959+0.02 EUR
Mindestbestellmenge: 556
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MBRB2545CTT4G MBRB2545CTG.PDF
MBRB2545CTT4G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward voltage: 0.65V
Max. load current: 30A
auf Bestellung 621 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.07 EUR
46+1.57 EUR
52+1.39 EUR
55+1.32 EUR
100+1.27 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
FDMC012N03 fdmc012n03-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BDW94C pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBD3F12EE6F2469&compId=BDW94C.pdf?ci_sign=690bb5e4108c20232162073b0e046bcaf29ed0f5
BDW94C
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 80W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 12A
Power dissipation: 80W
Case: TO220AB
Mounting: THT
Kind of package: bulk
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
74+0.98 EUR
96+0.75 EUR
102+0.71 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
BDW94CFTU pVersion=0046&contRep=ZT&docId=005056AB90B41EDB98A9098A1A26C0C7&compId=BDW94CF.pdf?ci_sign=26247f9f884003755699e45e1db0005e5f645378
BDW94CFTU
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 30W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 12A
Power dissipation: 30W
Case: TO220FP
Current gain: 100...20000
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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MJL1302AG MJL3281A_MJL1302A.PDF
MJL1302AG
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 260V; 15A; 200W; TO264
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 260V
Collector current: 15A
Power dissipation: 200W
Case: TO264
Mounting: THT
Kind of package: tube
Frequency: 30MHz
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+5.96 EUR
Mindestbestellmenge: 12
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NTR4101PT1G ntr4101.pdf
NTR4101PT1G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.7A; 0.21W; SOT23
Mounting: SMD
Power dissipation: 0.21W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.5nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Case: SOT23
Drain-source voltage: -20V
Drain current: -1.7A
On-state resistance: 0.21Ω
Type of transistor: P-MOSFET
auf Bestellung 1505 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
204+0.35 EUR
240+0.30 EUR
355+0.20 EUR
397+0.18 EUR
414+0.17 EUR
568+0.13 EUR
601+0.12 EUR
Mindestbestellmenge: 148
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MC79M05BDTG MC79M00-D.PDF
MC79M05BDTG
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
87+0.82 EUR
112+0.64 EUR
166+0.43 EUR
175+0.41 EUR
Mindestbestellmenge: 61
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MC79M05BDTRKG MC79M00-D.PDF
MC79M05BDTRKG
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
Produkt ist nicht verfügbar
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MC79M05CDTRKG MC79M00-D.PDF
MC79M05CDTRKG
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
Produkt ist nicht verfügbar
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H11AA1M H11AA1M.pdf
H11AA1M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: DIP6
CTR@If: 20%@10mA
auf Bestellung 509 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
118+0.61 EUR
176+0.41 EUR
186+0.38 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
H11AA1SR2M H11AA1SR2M.pdf
H11AA1SR2M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: Gull wing 6
CTR@If: 20%@10mA
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.90 EUR
108+0.66 EUR
Mindestbestellmenge: 80
Im Einkaufswagen  Stück im Wert von  UAH
FAN73832MX FAN73832.pdf
FAN73832MX
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SOP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SOP8
Output current: -650...350mA
Number of channels: 2
Supply voltage: 15...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 100ns
Pulse fall time: 80ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Technology: MillerDrive™
auf Bestellung 941 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.47 EUR
55+1.30 EUR
67+1.07 EUR
71+1.02 EUR
500+0.99 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
FQPF19N20C fqpf19n20c-d.pdf
FQPF19N20C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.10 EUR
Mindestbestellmenge: 23
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FQPF27P06 FQPF27P06.pdf
FQPF27P06
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
Produkt ist nicht verfügbar
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MC74LVX4245DWG mc74lvx4245-d.pdf
MC74LVX4245DWG
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Number of channels: 8
Quiescent current: 80µA
Kind of output: 3-state
Kind of package: tube
Manufacturer series: LVX
Technology: TTL
Kind of integrated circuit: bidirectional; transceiver; translator
Mounting: SMD
Operating temperature: -40...85°C
Case: SO24
Supply voltage: 2.7...5.5V DC
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
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LM2575T-5G description LM2575-ON-DTE.PDF
LM2575T-5G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 1A; TO220-5; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Produkt ist nicht verfügbar
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SBAT54SLT1G bat54slt1-d.pdf
SBAT54SLT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 1A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
auf Bestellung 2871 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
341+0.21 EUR
420+0.17 EUR
497+0.14 EUR
588+0.12 EUR
1069+0.07 EUR
1129+0.06 EUR
Mindestbestellmenge: 228
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MCT62S mct62-d.pdf
MCT62S
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 5.3kV; CTR@If: 100%@5mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Case: Gull wing 8
Insulation voltage: 5.3kV
CTR@If: 100%@5mA
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
93+0.78 EUR
104+0.69 EUR
Mindestbestellmenge: 61
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MBR60H100CTG MBR60H100CTG.PDF
MBR60H100CTG
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220-3; Ufmax: 0.81V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
Max. forward voltage: 0.81V
Max. forward impulse current: 350A
Produkt ist nicht verfügbar
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MBR60L45CTG MBR60L45CTG.PDF
MBR60L45CTG
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220-3; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
Max. forward voltage: 0.76V
Max. forward impulse current: 200A
Produkt ist nicht verfügbar
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BDV64BG BDV64BG.PDF
BDV64BG
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 10A
Power dissipation: 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.86 EUR
28+2.56 EUR
30+2.42 EUR
Mindestbestellmenge: 15
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BZX84C9V1LT1G BZX84B_BZX84C.PDF
BZX84C9V1LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOT23; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 0.5µA
auf Bestellung 1046 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
642+0.11 EUR
758+0.09 EUR
1046+0.07 EUR
Mindestbestellmenge: 500
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FDMS3672 fdms3672-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 30A; 78W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 30A
Power dissipation: 78W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CAT24C04C4ATR CAT24C01-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C04WI-GT3 CAT24C01-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C04YI-GT3 CAT24C01-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FQP11N40C FQP11N40C.pdf
FQP11N40C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
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BAT54CXV3T1G bat54cxv3-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC89; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SC89
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.24W
Produkt ist nicht verfügbar
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SBAT54CTT1G bat54ctt1-d.pdf
SBAT54CTT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC70; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SC70
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Produkt ist nicht verfügbar
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CAT93C46BHU4I-GT3 CAT93C46B-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: Microwire
Kind of memory: EEPROM
Memory organisation: 128x8/64x16bit
Access time: 250ns
Clock frequency: 4MHz
Operating temperature: -40...85°C
Kind of interface: serial
Memory: 1kb EEPROM
Produkt ist nicht verfügbar
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CAT93C46BVI-GT3 CAT93C46B-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: Microwire
Memory organisation: 128x8/64x16bit
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Access time: 250ns
Clock frequency: 4MHz
Kind of package: reel; tape
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CAT93C46BYI-GT3 CAT93C46B-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: Microwire
Memory organisation: 128x8/64x16bit
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Access time: 250ns
Clock frequency: 4MHz
Kind of package: reel; tape
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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FDP7030BL FAIRS34662-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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2SA2012-TD-E 2sa2012-d.pdf
2SA2012-TD-E
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89
Mounting: SMD
Type of transistor: PNP
Power dissipation: 3.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Frequency: 350MHz
Collector-emitter voltage: 30V
Current gain: 200...560
Collector current: 5A
auf Bestellung 720 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
78+0.92 EUR
116+0.62 EUR
151+0.47 EUR
160+0.45 EUR
Mindestbestellmenge: 78
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NLVASB3157DFT2G nlasb3157-d.pdf
NLVASB3157DFT2G
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC88A
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: SC88A
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 1
Kind of output: SPDT
Application: automotive industry
auf Bestellung 900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
160+0.45 EUR
181+0.40 EUR
246+0.29 EUR
261+0.27 EUR
Mindestbestellmenge: 160
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NTR4003NT1G NTR4003N.PDF
NTR4003NT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.56A; 0.69W; SOT23
Power dissipation: 0.69W
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Drain-source voltage: 30V
Drain current: 0.56A
On-state resistance: 2Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.15nC
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 6627 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
295+0.24 EUR
355+0.20 EUR
560+0.13 EUR
672+0.11 EUR
1299+0.06 EUR
1374+0.05 EUR
Mindestbestellmenge: 218
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BAT54HT1G pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BE9C5AF16B04BE28&compId=BAT54HT1-D.PDF?ci_sign=e19eb172504d3a206b72fe2d1fa2ef047a97f5b1
BAT54HT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 7.6pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
auf Bestellung 3066 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
771+0.09 EUR
1137+0.06 EUR
1767+0.04 EUR
2137+0.03 EUR
3066+0.02 EUR
Mindestbestellmenge: 771
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MBRD660CTT4G pVersion=0046&contRep=ZT&docId=005056AB752F1ED781AEA8BBC7BA0259&compId=MBRD650CTG.PDF?ci_sign=0c54ffa575647dd1f76009aab93580e7bbcc426f
MBRD660CTT4G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 3Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. load current: 6A
Kind of package: reel; tape
auf Bestellung 858 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
96+0.75 EUR
134+0.54 EUR
141+0.51 EUR
500+0.50 EUR
Mindestbestellmenge: 70
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HUF75344G3 HUF75344G3.pdf
HUF75344G3
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO247
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 285W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 201 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.02 EUR
21+3.47 EUR
22+3.29 EUR
30+3.27 EUR
Mindestbestellmenge: 15
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FQA70N10 FQA70N10.pdf
FQA70N10
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49.5A
Power dissipation: 214W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
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FQB12P20TM FQB12P20.pdf
FQB12P20TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.27A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 760 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.27 EUR
36+2.03 EUR
46+1.56 EUR
49+1.47 EUR
Mindestbestellmenge: 32
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FQB19N20LTM pVersion=0046&contRep=ZT&docId=005056AB752F1ED781972AB2675AE259&compId=FQB19N20L.pdf?ci_sign=09ce8e6d8a0c9a5c2f4d1d2174e061d2874c3dca
FQB19N20LTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 13.3A
Pulsed drain current: 84A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 761 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.94 EUR
41+1.76 EUR
54+1.33 EUR
57+1.26 EUR
Mindestbestellmenge: 37
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FQB22P10TM FQB22P10.pdf
FQB22P10TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15.6A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3861 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.06 EUR
37+1.96 EUR
50+1.46 EUR
52+1.39 EUR
500+1.37 EUR
Mindestbestellmenge: 24
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FQB27P06TM FQB27P06.pdf
FQB27P06TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19.1A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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