Foto | Bezeichnung | Hersteller | Beschreibung |
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CAT24C64C4CTR | ONSEMI |
![]() Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; WLCSP4 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: WLCSP4 Kind of interface: serial Operating temperature: -40...85°C Access time: 400ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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CAT24C64HU4I-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...85°C Access time: 400ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
CAT24C64WI-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; SOIC8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 400ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
CAT24C64YI-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; TSSOP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Access time: 400ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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BZX84C3V3LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA Tolerance: ±5% Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.3W Zener voltage: 3.3V Manufacturer series: BZX84C Semiconductor structure: single diode Type of diode: Zener Leakage current: 5µA |
auf Bestellung 9703 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C5V1LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode; 1uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C Leakage current: 1µA |
auf Bestellung 2944 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5333BG | ONSEMI |
![]() Description: Diode: Zener; 5W; 3.3V; bulk; CASE017AA; single diode; 300uA Type of diode: Zener Power dissipation: 5W Zener voltage: 3.3V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.3mA Manufacturer series: 1N53xxB |
auf Bestellung 2194 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5333BRLG | ONSEMI |
![]() ![]() Description: Diode: Zener; 5W; 3.3V; reel,tape; CASE017AA; single diode; 300uA Type of diode: Zener Power dissipation: 5W Zener voltage: 3.3V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.3mA Manufacturer series: 1N53xxB |
auf Bestellung 357 Stücke: Lieferzeit 14-21 Tag (e) |
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UC2844BD1R2G | ONSEMI |
![]() Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: -25...85°C Topology: boost; flyback Supply voltage: 16...36V Duty cycle factor: 0...48% Kind of package: reel; tape Operating voltage: 10...36V Power: 702mW |
Produkt ist nicht verfügbar |
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UC2844BDR2G | ONSEMI |
![]() Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; boost,flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO14 Mounting: SMD Operating temperature: -25...85°C Topology: boost; flyback Supply voltage: 16...36V Duty cycle factor: 0...48% Kind of package: reel; tape Operating voltage: 10...36V Power: 862mW |
auf Bestellung 1617 Stücke: Lieferzeit 14-21 Tag (e) |
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UC2844BNG | ONSEMI |
![]() Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; DIP8; boost,flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: DIP8 Mounting: THT Operating temperature: -25...85°C Topology: boost; flyback Supply voltage: 16...36V Duty cycle factor: 0...48% Kind of package: tube Operating voltage: 10...36V Power: 1.25W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MM74HC126M | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; HC; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Manufacturer series: HC Operating temperature: -40...85°C Kind of output: 3-state |
auf Bestellung 111 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HC126MTCX | ONSEMI |
![]() Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; TSSOP14WB; HC Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer Number of channels: 4 Mounting: SMD Case: TSSOP14WB Supply voltage: 2...6V DC Family: HC Manufacturer series: HC Kind of package: reel; tape Technology: CMOS Operating temperature: -55...125°C Number of inputs: 2 Kind of output: 3-state |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
MM74HC126MX | ONSEMI |
![]() Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; SOIC14; HC; HC Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer Number of channels: 4 Mounting: SMD Case: SOIC14 Supply voltage: 2...6V DC Family: HC Manufacturer series: HC Kind of package: reel; tape Technology: CMOS Operating temperature: -55...125°C Number of inputs: 2 Kind of output: 3-state |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NSI45015WT1G | ONSEMI |
![]() Description: IC: driver; current regulator,LED driver; SOD123; 45VDC; 460mW Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SOD123 Mounting: SMD Operating temperature: -55...150°C Operating current: 15mA Power dissipation: 0.46W Operating voltage: 45V DC |
auf Bestellung 1019 Stücke: Lieferzeit 14-21 Tag (e) |
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MURS120T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Max. forward voltage: 0.875V Max. forward impulse current: 40A Kind of package: reel; tape |
auf Bestellung 2143 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74AC245DWG | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; AC; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: SO20 Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC Kind of package: reel; tape Quiescent current: 80µA Manufacturer series: AC |
auf Bestellung 145 Stücke: Lieferzeit 14-21 Tag (e) |
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MJ15024G | ONSEMI |
![]() ![]() Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 16A Power dissipation: 250W Case: TO3 Mounting: THT Kind of package: in-tray |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT4401LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FQAF16N50 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.15A Power dissipation: 110W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhancement Technology: QFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MBR0530T1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.43V Max. forward impulse current: 5.5A Kind of package: reel; tape |
auf Bestellung 31112 Stücke: Lieferzeit 14-21 Tag (e) |
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MBR0530T3G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.43V Max. forward impulse current: 5.5A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC33035DWG | ONSEMI |
![]() Description: IC: driver; brushless motor controller; SO24; Ch: 3; Usup: 0÷40VDC Operating temperature: -40...85°C Type of integrated circuit: driver Mounting: SMD Case: SO24 Kind of package: tube Supply voltage: 0...40V DC Number of channels: 3 Operating voltage: 10...30V DC Kind of integrated circuit: brushless motor controller |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC3042M | ONSEMI |
![]() Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC304XM; 1kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Mounting: THT Number of channels: 1 Slew rate: 1kV/μs Manufacturer series: MOC304XM |
Produkt ist nicht verfügbar |
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NUD4001DR2G | ONSEMI |
![]() ![]() Description: IC: driver; LED driver; SO8; 500mA; 28V; Ch: 1; PWM Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: SO8 Output current: 0.5A Output voltage: 28V Number of channels: 1 Integrated circuit features: PWM Mounting: SMD Operating temperature: -40...125°C |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD4001NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W Mounting: SMD Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Polarisation: unipolar Drain current: 0.18A Power dissipation: 0.272W On-state resistance: 1.5Ω Gate-source voltage: ±20V Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Kind of channel: enhancement |
auf Bestellung 1790 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTJD4001NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W Mounting: SMD Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Polarisation: unipolar Drain current: 0.18A Power dissipation: 0.272W On-state resistance: 1.5Ω Gate-source voltage: ±20V Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Kind of channel: enhancement |
auf Bestellung 2910 Stücke: Lieferzeit 14-21 Tag (e) |
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6N138M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP8; 6N138M Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV CTR@If: 300-1600%@1.6mA Case: DIP8 Manufacturer series: 6N138M |
Produkt ist nicht verfügbar |
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MMBFJ201 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 200uA; 0.35W; SOT23; Igt: 50mA Case: SOT23 Type of transistor: N-JFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate-source voltage: -40V Drain current: 200µA Gate current: 50mA Power dissipation: 0.35W |
auf Bestellung 1275 Stücke: Lieferzeit 14-21 Tag (e) |
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CAT24C04HU4I-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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FQD2N90TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK Polarisation: unipolar Gate charge: 15nC On-state resistance: 7.2Ω Drain current: 1.08A Pulsed drain current: 6.8A Gate-source voltage: ±30V Power dissipation: 50W Drain-source voltage: 900V Case: DPAK Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
FQU2N90TU-AM002 | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Polarisation: unipolar Gate charge: 15nC On-state resistance: 7.2Ω Drain current: 1.08A Pulsed drain current: 6.8A Gate-source voltage: ±30V Power dissipation: 50W Drain-source voltage: 900V Case: IPAK Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
FQU2N90TU-WS | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Polarisation: unipolar Gate charge: 15nC On-state resistance: 7.2Ω Drain current: 1.08A Pulsed drain current: 6.8A Gate-source voltage: ±30V Power dissipation: 50W Drain-source voltage: 900V Case: IPAK Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NCP431ACLPRAG | ONSEMI |
![]() Description: IC: voltage reference source; 2.5V; ±1%; TO92; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: 0...70°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.5...36V |
Produkt ist nicht verfügbar |
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NCP431ACSNT1G | ONSEMI |
![]() Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: 0...70°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.5...36V |
Produkt ist nicht verfügbar |
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FCPF11N60 | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 52nC |
auf Bestellung 77 Stücke: Lieferzeit 14-21 Tag (e) |
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FCPF11N60F | ONSEMI |
![]() Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 52nC Pulsed drain current: 33A |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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FCPF11N60T | ONSEMI |
![]() Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 7A; Idm: 33A; 36W Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 52nC Pulsed drain current: 33A |
Produkt ist nicht verfügbar |
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FCP22N60N | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 205W; TO220AB Type of transistor: N-MOSFET Technology: SuperMOS® Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 205W Case: TO220AB Gate-source voltage: ±45V On-state resistance: 0.165Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FDD6637 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -35V Drain current: -55A Power dissipation: 57W Case: DPAK Gate-source voltage: ±25V On-state resistance: 19mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2604 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBTH81 | ONSEMI |
![]() Description: Transistor: PNP; bipolar; RF; 20V; 50mA; 225mW; SOT23 Type of transistor: PNP Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 20V Collector current: 50mA Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 600MHz |
auf Bestellung 503 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HC86M | ONSEMI |
![]() Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...85°C Quiescent current: 20µA Family: HC Supply voltage: 2...6V DC Kind of package: tube |
Produkt ist nicht verfügbar |
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MJH11020G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3 Kind of transistor: Darlington Type of transistor: NPN Mounting: THT Case: TO247-3 Kind of package: tube Collector current: 15A Power dissipation: 150W Collector-emitter voltage: 200V Polarisation: bipolar |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
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MJH11021G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 250V Collector current: 15A Power dissipation: 150W Case: TO247-3 Mounting: THT Kind of package: tube |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
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MJH11022G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 250V Collector current: 15A Power dissipation: 150W Case: TO247-3 Mounting: THT Kind of package: tube |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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MJD127T4G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 20W Case: DPAK Mounting: SMD |
auf Bestellung 2067 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C10 | ONSEMI |
![]() Description: Diode: Zener; 1.3W; 10V; bulk; DO41; single diode; 0.5uA; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 10V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX85C Leakage current: 0.5µA |
auf Bestellung 74 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C15 | ONSEMI |
![]() Description: Diode: Zener; 1.3W; 15V; bulk; DO41; single diode; 0.5uA; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 15V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX85C Leakage current: 0.5µA |
auf Bestellung 5932 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C16 | ONSEMI |
![]() Description: Diode: Zener; 1.3W; 16V; bulk; DO41; single diode; 0.5uA; BZX85C Tolerance: ±5% Mounting: THT Manufacturer series: BZX85C Leakage current: 0.5µA Power dissipation: 1.3W Kind of package: bulk Zener voltage: 16V Semiconductor structure: single diode Type of diode: Zener Case: DO41 |
auf Bestellung 146 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBTA06LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB Mounting: SMD Frequency: 100MHz Collector-emitter voltage: 80V Current gain: 100 Collector current: 0.5A Type of transistor: NPN Power dissipation: 0.225W Polarisation: bipolar Kind of package: reel; tape Case: SOT23; TO236AB |
auf Bestellung 9294 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HC32MX | ONSEMI |
![]() Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 10ns Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Family: HC Kind of package: reel; tape Operating temperature: -40...85°C Delay time: 10ns Technology: CMOS |
Produkt ist nicht verfügbar |
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MM74HC32MTCX | ONSEMI |
![]() Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Family: HC Kind of package: reel; tape Operating temperature: -40...85°C Delay time: 10ns Technology: CMOS |
Produkt ist nicht verfügbar |
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MM74HC86MX | ONSEMI |
![]() Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 9ns Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...85°C Family: HC Delay time: 9ns Supply voltage: 2...6V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
MM74HC86MTCX | ONSEMI |
![]() Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC Type of integrated circuit: digital Kind of gate: XOR Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Family: HC Manufacturer series: HC Supply voltage: 2...6V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MM74HC132MX | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of input: with Schmitt trigger Family: HC Kind of package: reel; tape Delay time: 12ns Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MM74HC132MTCX | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of input: with Schmitt trigger Family: HC Kind of package: reel; tape Delay time: 12ns Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MMBD1503A | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A Mounting: SMD Case: SOT23 Type of diode: switching Capacitance: 4pF Load current: 0.2A Power dissipation: 0.35W Max. forward impulse current: 2A Max. forward voltage: 1.15V Max. off-state voltage: 200V Kind of package: reel; tape Semiconductor structure: double series |
auf Bestellung 3366 Stücke: Lieferzeit 14-21 Tag (e) |
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BC638TA | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz Current gain: 100...250 |
auf Bestellung 1959 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT2484LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 0.1A; 0.225/0.3W; SOT23,TO236AB Mounting: SMD Case: SOT23; TO236AB Polarisation: bipolar Collector current: 0.1A Power dissipation: 0.225/0.3W Collector-emitter voltage: 60V Type of transistor: NPN Current gain: 250...800 Kind of package: reel; tape |
auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
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LM317LZG | ONSEMI |
![]() Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT Output voltage: 1.2...37V Mounting: THT Type of integrated circuit: voltage regulator Operating temperature: 0...125°C Output current: 0.1A Number of channels: 1 Input voltage: 3...40V Kind of voltage regulator: adjustable; linear Kind of package: bulk Case: TO92 Manufacturer series: LM317L |
auf Bestellung 140 Stücke: Lieferzeit 14-21 Tag (e) |
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CAT24C64C4CTR |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; WLCSP4
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 400ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; WLCSP4
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CAT24C64HU4I-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 400ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CAT24C64WI-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 400ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CAT24C64YI-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 400ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX84C3V3LT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Tolerance: ±5%
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.3W
Zener voltage: 3.3V
Manufacturer series: BZX84C
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Tolerance: ±5%
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.3W
Zener voltage: 3.3V
Manufacturer series: BZX84C
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 5µA
auf Bestellung 9703 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
807+ | 0.089 EUR |
1345+ | 0.053 EUR |
1662+ | 0.043 EUR |
2513+ | 0.028 EUR |
3624+ | 0.02 EUR |
3847+ | 0.019 EUR |
BZX84C5V1LT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 1µA
auf Bestellung 2944 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
527+ | 0.14 EUR |
782+ | 0.092 EUR |
944+ | 0.076 EUR |
1534+ | 0.047 EUR |
1859+ | 0.038 EUR |
2689+ | 0.027 EUR |
2944+ | 0.024 EUR |
1N5333BG |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 3.3V; bulk; CASE017AA; single diode; 300uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 3.3V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.3mA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 3.3V; bulk; CASE017AA; single diode; 300uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 3.3V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.3mA
Manufacturer series: 1N53xxB
auf Bestellung 2194 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
109+ | 0.66 EUR |
145+ | 0.5 EUR |
198+ | 0.36 EUR |
311+ | 0.23 EUR |
329+ | 0.22 EUR |
1000+ | 0.21 EUR |
1N5333BRLG | ![]() |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 3.3V; reel,tape; CASE017AA; single diode; 300uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.3mA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 3.3V; reel,tape; CASE017AA; single diode; 300uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.3mA
Manufacturer series: 1N53xxB
auf Bestellung 357 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
196+ | 0.37 EUR |
243+ | 0.29 EUR |
269+ | 0.27 EUR |
285+ | 0.25 EUR |
296+ | 0.24 EUR |
UC2844BD1R2G |
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Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -25...85°C
Topology: boost; flyback
Supply voltage: 16...36V
Duty cycle factor: 0...48%
Kind of package: reel; tape
Operating voltage: 10...36V
Power: 702mW
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -25...85°C
Topology: boost; flyback
Supply voltage: 16...36V
Duty cycle factor: 0...48%
Kind of package: reel; tape
Operating voltage: 10...36V
Power: 702mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
UC2844BDR2G |
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Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -25...85°C
Topology: boost; flyback
Supply voltage: 16...36V
Duty cycle factor: 0...48%
Kind of package: reel; tape
Operating voltage: 10...36V
Power: 862mW
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -25...85°C
Topology: boost; flyback
Supply voltage: 16...36V
Duty cycle factor: 0...48%
Kind of package: reel; tape
Operating voltage: 10...36V
Power: 862mW
auf Bestellung 1617 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
57+ | 1.27 EUR |
85+ | 0.85 EUR |
100+ | 0.72 EUR |
157+ | 0.46 EUR |
166+ | 0.43 EUR |
1000+ | 0.41 EUR |
UC2844BNG |
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Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; DIP8; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...85°C
Topology: boost; flyback
Supply voltage: 16...36V
Duty cycle factor: 0...48%
Kind of package: tube
Operating voltage: 10...36V
Power: 1.25W
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; DIP8; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...85°C
Topology: boost; flyback
Supply voltage: 16...36V
Duty cycle factor: 0...48%
Kind of package: tube
Operating voltage: 10...36V
Power: 1.25W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM74HC126M |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Manufacturer series: HC
Operating temperature: -40...85°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Manufacturer series: HC
Operating temperature: -40...85°C
Kind of output: 3-state
auf Bestellung 111 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
54+ | 1.34 EUR |
109+ | 0.66 EUR |
111+ | 0.64 EUR |
MM74HC126MTCX |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; TSSOP14WB; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 4
Mounting: SMD
Case: TSSOP14WB
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
Kind of package: reel; tape
Technology: CMOS
Operating temperature: -55...125°C
Number of inputs: 2
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; TSSOP14WB; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 4
Mounting: SMD
Case: TSSOP14WB
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
Kind of package: reel; tape
Technology: CMOS
Operating temperature: -55...125°C
Number of inputs: 2
Kind of output: 3-state
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM74HC126MX |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; SOIC14; HC; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 4
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
Kind of package: reel; tape
Technology: CMOS
Operating temperature: -55...125°C
Number of inputs: 2
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; SOIC14; HC; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 4
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
Kind of package: reel; tape
Technology: CMOS
Operating temperature: -55...125°C
Number of inputs: 2
Kind of output: 3-state
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSI45015WT1G |
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Hersteller: ONSEMI
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 45VDC; 460mW
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Mounting: SMD
Operating temperature: -55...150°C
Operating current: 15mA
Power dissipation: 0.46W
Operating voltage: 45V DC
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 45VDC; 460mW
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Mounting: SMD
Operating temperature: -55...150°C
Operating current: 15mA
Power dissipation: 0.46W
Operating voltage: 45V DC
auf Bestellung 1019 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
97+ | 0.74 EUR |
161+ | 0.45 EUR |
196+ | 0.37 EUR |
332+ | 0.22 EUR |
350+ | 0.2 EUR |
MURS120T3G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
auf Bestellung 2143 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
275+ | 0.26 EUR |
300+ | 0.24 EUR |
363+ | 0.2 EUR |
397+ | 0.18 EUR |
820+ | 0.087 EUR |
878+ | 0.082 EUR |
MC74AC245DWG |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: reel; tape
Quiescent current: 80µA
Manufacturer series: AC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: reel; tape
Quiescent current: 80µA
Manufacturer series: AC
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
37+ | 1.97 EUR |
56+ | 1.29 EUR |
80+ | 0.9 EUR |
82+ | 0.87 EUR |
85+ | 0.84 EUR |
114+ | 0.83 EUR |
MJ15024G | ![]() |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.89 EUR |
10+ | 7.22 EUR |
11+ | 6.82 EUR |
25+ | 6.76 EUR |
MMBT4401LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FQAF16N50 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.15A
Power dissipation: 110W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.15A
Power dissipation: 110W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MBR0530T1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
auf Bestellung 31112 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
481+ | 0.15 EUR |
589+ | 0.12 EUR |
646+ | 0.11 EUR |
1767+ | 0.04 EUR |
1866+ | 0.038 EUR |
MBR0530T3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC33035DWG |
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Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SO24; Ch: 3; Usup: 0÷40VDC
Operating temperature: -40...85°C
Type of integrated circuit: driver
Mounting: SMD
Case: SO24
Kind of package: tube
Supply voltage: 0...40V DC
Number of channels: 3
Operating voltage: 10...30V DC
Kind of integrated circuit: brushless motor controller
Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SO24; Ch: 3; Usup: 0÷40VDC
Operating temperature: -40...85°C
Type of integrated circuit: driver
Mounting: SMD
Case: SO24
Kind of package: tube
Supply voltage: 0...40V DC
Number of channels: 3
Operating voltage: 10...30V DC
Kind of integrated circuit: brushless motor controller
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.82 EUR |
13+ | 5.51 EUR |
14+ | 5.29 EUR |
MOC3042M |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC304XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Slew rate: 1kV/μs
Manufacturer series: MOC304XM
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC304XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Slew rate: 1kV/μs
Manufacturer series: MOC304XM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NUD4001DR2G | ![]() |
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Hersteller: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; SO8; 500mA; 28V; Ch: 1; PWM
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO8
Output current: 0.5A
Output voltage: 28V
Number of channels: 1
Integrated circuit features: PWM
Mounting: SMD
Operating temperature: -40...125°C
Category: LED drivers
Description: IC: driver; LED driver; SO8; 500mA; 28V; Ch: 1; PWM
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SO8
Output current: 0.5A
Output voltage: 28V
Number of channels: 1
Integrated circuit features: PWM
Mounting: SMD
Operating temperature: -40...125°C
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.83 EUR |
73+ | 0.99 EUR |
104+ | 0.69 EUR |
110+ | 0.65 EUR |
250+ | 0.63 EUR |
NTJD4001NT1G |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.18A
Power dissipation: 0.272W
On-state resistance: 1.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.18A
Power dissipation: 0.272W
On-state resistance: 1.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Kind of channel: enhancement
auf Bestellung 1790 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
139+ | 0.51 EUR |
187+ | 0.38 EUR |
275+ | 0.26 EUR |
327+ | 0.22 EUR |
496+ | 0.14 EUR |
1000+ | 0.13 EUR |
NVTJD4001NT1G |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.18A
Power dissipation: 0.272W
On-state resistance: 1.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.18A
Power dissipation: 0.272W
On-state resistance: 1.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Kind of channel: enhancement
auf Bestellung 2910 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
191+ | 0.38 EUR |
216+ | 0.33 EUR |
266+ | 0.27 EUR |
360+ | 0.2 EUR |
439+ | 0.16 EUR |
516+ | 0.14 EUR |
532+ | 0.13 EUR |
6N138M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP8; 6N138M
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 300-1600%@1.6mA
Case: DIP8
Manufacturer series: 6N138M
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP8; 6N138M
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 300-1600%@1.6mA
Case: DIP8
Manufacturer series: 6N138M
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBFJ201 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 200uA; 0.35W; SOT23; Igt: 50mA
Case: SOT23
Type of transistor: N-JFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -40V
Drain current: 200µA
Gate current: 50mA
Power dissipation: 0.35W
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 200uA; 0.35W; SOT23; Igt: 50mA
Case: SOT23
Type of transistor: N-JFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -40V
Drain current: 200µA
Gate current: 50mA
Power dissipation: 0.35W
auf Bestellung 1275 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
152+ | 0.47 EUR |
188+ | 0.38 EUR |
253+ | 0.28 EUR |
290+ | 0.25 EUR |
327+ | 0.22 EUR |
459+ | 0.16 EUR |
486+ | 0.15 EUR |
CAT24C04HU4I-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FQD2N90TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FQU2N90TU-AM002 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FQU2N90TU-WS |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP431ACLPRAG |
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Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; TO92; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; TO92; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP431ACSNT1G |
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Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCPF11N60 | ![]() |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
27+ | 2.66 EUR |
33+ | 2.22 EUR |
35+ | 2.09 EUR |
50+ | 2.02 EUR |
FCPF11N60F |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Pulsed drain current: 33A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Pulsed drain current: 33A
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.92 EUR |
25+ | 2.95 EUR |
26+ | 2.79 EUR |
FCPF11N60T |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Pulsed drain current: 33A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Pulsed drain current: 33A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCP22N60N |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperMOS®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±45V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperMOS®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±45V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDD6637 |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -35V
Drain current: -55A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -35V
Drain current: -55A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2604 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
36+ | 2.02 EUR |
41+ | 1.76 EUR |
45+ | 1.6 EUR |
61+ | 1.17 EUR |
65+ | 1.12 EUR |
250+ | 1.07 EUR |
MMBTH81 |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; RF; 20V; 50mA; 225mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 600MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; RF; 20V; 50mA; 225mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 600MHz
auf Bestellung 503 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
417+ | 0.17 EUR |
481+ | 0.15 EUR |
503+ | 0.14 EUR |
MM74HC86M |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 20µA
Family: HC
Supply voltage: 2...6V DC
Kind of package: tube
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 20µA
Family: HC
Supply voltage: 2...6V DC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MJH11020G |
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Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 200V
Polarisation: bipolar
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 200V
Polarisation: bipolar
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.84 EUR |
15+ | 4.92 EUR |
16+ | 4.48 EUR |
MJH11021G |
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Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 150W
Case: TO247-3
Mounting: THT
Kind of package: tube
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 150W
Case: TO247-3
Mounting: THT
Kind of package: tube
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.32 EUR |
15+ | 4.83 EUR |
16+ | 4.56 EUR |
MJH11022G |
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Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 150W
Case: TO247-3
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 150W
Case: TO247-3
Mounting: THT
Kind of package: tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.48 EUR |
18+ | 4.02 EUR |
19+ | 3.83 EUR |
21+ | 3.55 EUR |
30+ | 3.49 EUR |
MJD127T4G |
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Hersteller: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
auf Bestellung 2067 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
64+ | 1.13 EUR |
79+ | 0.91 EUR |
152+ | 0.47 EUR |
161+ | 0.45 EUR |
500+ | 0.43 EUR |
BZX85C10 |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
74+ | 0.97 EUR |
BZX85C15 |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 15V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 15V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 15V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 15V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
auf Bestellung 5932 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
521+ | 0.14 EUR |
645+ | 0.11 EUR |
765+ | 0.094 EUR |
903+ | 0.079 EUR |
1107+ | 0.065 EUR |
1484+ | 0.048 EUR |
1568+ | 0.046 EUR |
3000+ | 0.044 EUR |
BZX85C16 |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 16V; bulk; DO41; single diode; 0.5uA; BZX85C
Tolerance: ±5%
Mounting: THT
Manufacturer series: BZX85C
Leakage current: 0.5µA
Power dissipation: 1.3W
Kind of package: bulk
Zener voltage: 16V
Semiconductor structure: single diode
Type of diode: Zener
Case: DO41
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 16V; bulk; DO41; single diode; 0.5uA; BZX85C
Tolerance: ±5%
Mounting: THT
Manufacturer series: BZX85C
Leakage current: 0.5µA
Power dissipation: 1.3W
Kind of package: bulk
Zener voltage: 16V
Semiconductor structure: single diode
Type of diode: Zener
Case: DO41
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
146+ | 0.49 EUR |
MMBTA06LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Mounting: SMD
Frequency: 100MHz
Collector-emitter voltage: 80V
Current gain: 100
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.225W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT23; TO236AB
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Mounting: SMD
Frequency: 100MHz
Collector-emitter voltage: 80V
Current gain: 100
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.225W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT23; TO236AB
auf Bestellung 9294 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
601+ | 0.12 EUR |
926+ | 0.077 EUR |
1316+ | 0.054 EUR |
1525+ | 0.047 EUR |
2110+ | 0.034 EUR |
3677+ | 0.019 EUR |
3907+ | 0.018 EUR |
MM74HC32MX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 10ns
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -40...85°C
Delay time: 10ns
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 10ns
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -40...85°C
Delay time: 10ns
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM74HC32MTCX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -40...85°C
Delay time: 10ns
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -40...85°C
Delay time: 10ns
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM74HC86MX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 9ns
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HC
Delay time: 9ns
Supply voltage: 2...6V DC
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 9ns
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HC
Delay time: 9ns
Supply voltage: 2...6V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM74HC86MTCX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: HC
Manufacturer series: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: HC
Manufacturer series: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM74HC132MX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of input: with Schmitt trigger
Family: HC
Kind of package: reel; tape
Delay time: 12ns
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of input: with Schmitt trigger
Family: HC
Kind of package: reel; tape
Delay time: 12ns
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM74HC132MTCX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of input: with Schmitt trigger
Family: HC
Kind of package: reel; tape
Delay time: 12ns
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of input: with Schmitt trigger
Family: HC
Kind of package: reel; tape
Delay time: 12ns
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBD1503A |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 4pF
Load current: 0.2A
Power dissipation: 0.35W
Max. forward impulse current: 2A
Max. forward voltage: 1.15V
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: double series
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 4pF
Load current: 0.2A
Power dissipation: 0.35W
Max. forward impulse current: 2A
Max. forward voltage: 1.15V
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: double series
auf Bestellung 3366 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
293+ | 0.24 EUR |
426+ | 0.17 EUR |
501+ | 0.14 EUR |
887+ | 0.081 EUR |
939+ | 0.076 EUR |
2000+ | 0.073 EUR |
BC638TA |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 100...250
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 100...250
auf Bestellung 1959 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
223+ | 0.32 EUR |
385+ | 0.19 EUR |
824+ | 0.087 EUR |
872+ | 0.082 EUR |
MMBT2484LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Polarisation: bipolar
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Collector-emitter voltage: 60V
Type of transistor: NPN
Current gain: 250...800
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Polarisation: bipolar
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Collector-emitter voltage: 60V
Type of transistor: NPN
Current gain: 250...800
Kind of package: reel; tape
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
49+ | 1.46 EUR |
LM317LZG |
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Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Output voltage: 1.2...37V
Mounting: THT
Type of integrated circuit: voltage regulator
Operating temperature: 0...125°C
Output current: 0.1A
Number of channels: 1
Input voltage: 3...40V
Kind of voltage regulator: adjustable; linear
Kind of package: bulk
Case: TO92
Manufacturer series: LM317L
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Output voltage: 1.2...37V
Mounting: THT
Type of integrated circuit: voltage regulator
Operating temperature: 0...125°C
Output current: 0.1A
Number of channels: 1
Input voltage: 3...40V
Kind of voltage regulator: adjustable; linear
Kind of package: bulk
Case: TO92
Manufacturer series: LM317L
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
140+ | 0.51 EUR |